the impact of 3d storage solutions on the next generation

The impact of 3D storage solutions on the next generation of memory systems

DevelopEX 2017Airport City – Israel

Avi Klein

Engineering Fellow, Memory Technology Group

Western Digital Corp

October 31, 2017

©2017 Western Digital Corporation or its affiliates. All rights reserved.

• About Western Digital

• NAND, NVM and the Memory Taxonomy

• From 2D to 3D NAND – Going Vertical

• Key attributes of Western Digital’s BICS Technology (3D-NAND)

• Advantage of 3D NAND in various applications

• Summary

Outline

11/9/2017 2©2017 Western Digital Corporation or its affiliates. All rights reserved. Confidential.

Safe Harbor | Disclaimers

Forward-Looking Statements

3©2017 Western Digital Corporation or its affiliates. All rights reserved.

This presentation contains forward-looking statements that involve risks and uncertainties, including, but not limited to, statements regarding our market positioning, product development efforts, growth opportunities, business strategy, storage and memory technology, and market trends. Forward-looking statements should not be read as a guarantee of future performance or results, and will not necessarily be accurate indications of the times at, or by, which such performance or results will be achieved, if at all. Forward-looking statements are subject to risks and uncertainties that could cause actual performance or results to differ materially from those expressed in or suggested by the forward-looking statements.

Additional key risks and uncertainties include: volatility in global economic conditions; actions by competitors; difficulties associated with the integration of SanDisk and HGST into our company; business conditions; growth in our markets; and pricing trends and fluctuations in average selling prices. More information about the other risks and uncertainties that could affect our business are listed in our filings with the Securities and Exchange Commission (the “SEC”) and available on the SEC’s website at www.sec.gov, including our most recently filed periodic report, to which your attention is directed. We do not undertake any obligation to publicly update or revise any forward-looking statement, whether as a result of new information, future developments or otherwise, except as otherwise required by law.

The Western Digital Family of Brands

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Delivering the Possibilities of Data to Life

The Memory Taxonomy

Reg

Embed

Cache

Main Memory

SCM/Persistent Memory (New)

Storage

Cold Storage

LogicSRAM, eDRAM, STT-MRAM

DRAM STT-MRAM

DRAM, STT-MRAM

ReRAM, PCM,

NAND, HDD,

NAND, HDD, Tape

Cost

Perf

orm

ance

6©2017 Western Digital Corporation or its affiliates. All rights reserved. Confidential.

Moving Mountains of Data

Core

Register

Core

L1Cache

Core

L2Cache

Shared

L3Cache

DRAM HDD

Size 64KB 256KB 2-4MB 16-128GB 128GB-1TB 512GB-4TB 4-16TB

Speed 1ns 3-10ns 10-20ns 50-100ns 250-5,000ns100,000ns-2,000,000ns

5-10,000,000ns

Cost 100x 20-25x 5x 1x

FlashStorage

Class Memory

Western Digital Technologies

Different Tiers of Storage

NOR Flash NAND Flash HDDDRAM

Expensive Hotel No Hallway/door Hotelread(sleep)disturb problems

House with own Airplane &runway Chopper to drop guest

Bit has own FET Bit has own Contact 128 Bits share Contact Whole disk share one head

7

In NAND We Trust: More than Moore


Note: Images are not to scale *WDC

Cost

2001 2003 2005 2007 2009 2011 2013 2015 2017 2018+

1Gb, X2-160nm

128Gb, X3 19nm

128Gb, X3 1Ynm

128Gb, X3 1Znm

2Gb, X2-130nm

4Gb, X2-90nm

8Gb, X2-70nm

16Gb, X3-56nm

32Gb, X3-43nm

64Gb, X3 24nm

64Gb, X3-32nm

256Gb, BiCS2

256Gb, BiCS3

256Gb, BiCS4

2D NAND Architecture


BL

SGD

SGS

WL

SourcePlate

Floating Gate(memory cell)BL Contact

NAND String Si-sub

102016 Investor Day | Milpitas, CA | December 6, 2016

43nm 35nm 24nm 19nm BiCS2

Co

un

ts

-0.05 0 0.05 0.1 0.15 0.2 0.25

No Moore: End of Line for 2D NAND Scaling

We don’t have

enough electrons

Threshold Voltage (DeltaVt)

As cells get closer,

proximity effect worsens

Lithography Process

Complexity

43nm 35nm 19nm 15nm 1Z

Immersion

Double

Pattern

Inversion

Quad

Pattern

LOWER is better

Source: WDC estimates

FromGoing VerticalFrom 2D to 3D

BL

SGD

SGS

WL

SourcePlate

Floating Gate(memory cell)

BL Contact

NAND String Si-sub

The BiCS Scaling March

©2016 Western Digital Corporation or its affiliates. All rights reserved. 12

24L

BiCS1 BiCS2

48L

BiCS3

64L

BiCS5

BiCS4

96L

NAND Technology Scaling: 2D and 3D

<#>

3D NAND Min Feature size

3D NAND,

F= 0.5 𝑪𝒆𝒍𝒍𝒔𝒊𝒛𝒆

#𝒍𝒂𝒚𝒆𝒓𝒔

Log (Node, nm)

2D NAND, F = Half pitch= 0.5 √𝑪𝒆𝒍𝒍𝒔𝒊𝒛𝒆

Time

F :

Effective F

eatu

re S

ize

What is BiCS?

BiCS: Bit Cost Scalable flash technology (3D NAND)

Layer stacking w/o adding litho/process steps

Effective cell size = lateral cell size / n

2D NAND: Floating Gate (FG)

Replacing FG with Charge Trap Layer (CTL)

SG

SG

Control Gate


3D NAND Cell

Poly-Si Body

Gate

Charge Trap Layer

Proximity Effect in BiCS

4X nm 3X nm 2X nm 1X nm BiCS

WL Direction

BL Direction

Pro

xim

ity E

ffect


Lower is better

New opportunities for Scaling in NANDLateral, Vertical, Logical


BiCS4

96-layer3D NAND

technology

X4 Technology

Four bitsper cell

Flash memory

It is all Quite Logical: 4 Bits per Cell


Industry-leading64-layer 3D NAND

Single memory

cell

16 data levels per cell

SSD based on 768Gb X4

Industry Leading Portfolio Breadth

Data Center DevicesClient Solutions (Retail)

• Notebook / Desktop HDD

• NAS HDD

• Consumer Electronics HDD

• Client SSD

• Embedded, Components

• Enterprise HDD

• Enterprise SSD

• Integrated Object Storage System

• HDD Platform

• All Flash Platform

Data Center Systems & Platforms

• Branded HDD

• Branded Flash

• Removable products

Client Devices (OEM)

©2017 Western Digital Corporation or its affiliates. All rights reserved. Confidential.

Mobility MarketsThe “mobile platform” has evolved to more than handsets – data is at the heart of this revolution!

Auto Industrial/IoTMobile Home


More apps installed – Apps are more user friendly than the website.

• Social Media• Facebook• WeChat• Snapchat• Twitter

• VR/AR • Tango• VRSE• Pokémon Go• Orbulus

• Others• Maps• Music• Video• Games

Drivers For The Memory Capacity:Smartphone


Drivers For The Memory Capacity Increase: Smartphone


Photo and Video Creations

• Raw Image

• Multi shots

• Panoramic format

• 4K HD video

• Slow motion video

JPG RAW

Drivers for More Performance and Better User Experience

Consumer Demanded Better User Experience


• Fast system boot• Faster data transfer• Launch apps with reduced latency• Extended frames of multi-shot• Higher frame rate on slow motion video capture• Higher resolution burst shots• Higher resolution video – 4K HD

3D NAND (BICS) offers:– Scalability to high memory capacity– Fast Write Performance – Long Endurance (TBW)– Consume less power per GB written

The world’s first 64-layer 3D NAND client SSDs are now available, with higher capacities expected in the future.

The world’s first 3D NAND technology with 96 layers of vertical storage was introduced at Flash Memory Summit 2017.

3D NAND Summary

https://www.sandisk.com/about/media-center/press-releases/2017/western-digital-to-deliver-worlds-first-client-solid-state-drives-with-64-layer-3d-nand-technology

https://www.wdc.com/about-wd/newsroom/press-room/2017-08-10-western-digital-96-layer-3d-nand-recognized-as-best-of-show-at-the-flash-memory-summit.html

the impact of 3d storage solutions on the next generation

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