tecport e beam evaporator evaporated thin films process parameters
TRANSCRIPT
Tecport E beam EvaporatorEvaporated thin films
Process parameters
Process Parameters
Base pressure: 4E-6 Torr Deposition pressure: 8.71E-6 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 82mA Pump down time: 2hrs 35min Deposition time: 35min 27s rise and soak time: 10min ( total)
Al2O3
AnalysisDektak Surface profiler Thickness: 150.5nmEllipsometer thickness : 133nm
Al2O3 RESULTS
Process Parameters Base pressure: 3E-6 Torr Deposition pressure: 4.86E-5 Torr 1 sccm O2 was introduced during deposition (O2 started
1 min before deposition) Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 170mA Pump down time: 4hrs 35min Deposition time: 40min 30s rise and soak time: 21min( total)
Al2O3 with O2
Al2O3 with O2 results
AnalysisDektak Surface profilerThickness: 150nmEllipsometerthickness : 144nm
Process Parameters
Base pressure: 2E-6 Torr Deposition pressure: 6E-6 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 82mA Deposition time: 29min 34s rise and soak time: 10min ( total)
SiO2
Process Parameters
Base pressure: 2E-6 Torr Deposition pressure: 4e-5 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 30mA Deposition time: 29min 34s rise and soak time: 10min ( total)
SiO2 with O2
SiO2 vs SiO2 with O2 RESULTS
200 300 400 500 600 700 800 900 1000 11000
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
wavelength vs extinction coef-ficient
k 1k2
wavelength
exti
ncti
on c
oeffi
cie
nt
AnalysisDektak Surface profilerThickness: 134nmThickness with O2: 150nm
200 300 400 500 600 700 800 900 1000 11001.38
1.4
1.42
1.44
1.46
1.48
1.5
1.52
1.54
wavelength vs refractive index
n1n2
wavelength
refr
acti
ve index
Process Parameters
Base pressure: 3E-6 Torr Deposition pressure: 9E-5 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 65mA Deposition time: 32min rise and soak time: 23min ( total)
Aluminum (Al) 50nm
Process Parameters
Base pressure: 4.8E-6 Torr Deposition pressure: 7E-6 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 37mA Deposition time: 22min 31s rise and soak time: 10min ( total)
Chromium(Cr) 50nm
Process Parameters
Base pressure: 4.05E-6 Torr Deposition pressure: 2.04E-6 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 126mA Deposition time: 25min 34s rise and soak time: 10min ( total)
Gold(Au) 50nm