External Use

TM

TD-SCDMA and TDD-LTE

Solution

FTF-NET-F0479

M A Y . 2 0 1 4

Song Di | China RF Application Manager

Laurence Li | China RF Marketing

TM

External Use 1

Agenda

• TD-SCDMA and TDD-LTE Evolution Overview

• Solutions Recommendation

• Typical Performance Update

TM

External Use 2

Radio Frequency

Applications

Wireless Network Infrastructure • Macro, Metro & small cellular basestations

• Digital front end

Broadcast, Industrial/Scientific/Medical • UHF & VHF broadcast TV

• FM & shortwave radio

• CO2 lasers, plasma generation, MRI

Enterprise Access Points, Professional

Mobile Radio • Converged cellular / wifi

• Public safety, dispatch, transportation, marine

Aerospace / Defense • Radar

• Air traffic management

• Jammers

• Market leadership / scale

• Best-in-class performance in linear efficiency,

gain, bandwidth and power

• Fully optimized reference designs

• Long-term customer relationships

Why Customers Choose Us

Customers

We pioneered RF technology and continue to be the leader with high-quality,

high-performance products using the latest technologies

Products

Airfast RF Platform RF Power ICs

Market Leadership

#1 High Power RF Transistors for Wireless

Infrastructure (1)

Source: (1) ABI Research, December 2012

TM

External Use 3

TD-SCDMA and TDD LTE evolution in China

• Since the beginning of TD-SCDMA deployment in CMCC, Phase 1~ 5

had been deployed till 2012

• Phase 6~7 has been evolved into TD-LTE including frequency band F+A,

D and E since 2013

• Multiband and wide signal bandwidth are being used for high data traffic

• With three of China operators deploying TDD-LTE base station this year,

especially from CMCC, TDD-LTE base station will be the significant part in

4G base station

• Whether it would last in following years or how it evolve in future?

TM

External Use 4

Application Suggested Line Ups

Driver Final

Band E (2.3GHz)

Indoor/High Power 2*40W

2*AFT20S015N

2*AFT27S010N

AFT23H200-4S2L

2*AFT23S160WS/23S170S

Band D (2.6GHz)

Indoor/High Power 2*40W

2*AFT20S015N

2*AFT27S010N

AFT26H200W03S

AFT26H250-24S

2*AFT26H160

Band D (2.6GHz)

Outdoor/Medium Power 8*10W/8*15W

2*AFT27S006N

AFT20S010N

AFT26P100-4WS

AFT26H160-4S4

2.6GHz Small Cells

Low Power 5W AFT27S006N AFT26HW050S

Application Suggested Line Ups

Driver Final

Band F+A

Outdoor/Medium power 8*15W/20W

AFT27S006N

AFT27S010N

MRF8P20140WHS

AFT20P140-4WS

Band F+A

Indoor/High power 2*40W AFT20S015N/2*AFT27S006N

2*MRF8P20140WHS

2*AFT20P140-4WS

2.3/2.6GHz TD-LTE Solutions

TDSCDMA F+A Solutions recommendation

TM

External Use 5

AFT20P140-4WS

Performance Overview: Frequency band: 1880MHz – 2025MHz P3dB > 52.3dBm Gain >17dB Drain Efficiency @ 43.8dBm = 41%

• OM-780 Package

• eVBW Included

• Launch = March, 2013

1 10 100-65

-60

-55

-50

-45

-40

-35

-30

-25

-20Inter-modulation Distortion vs. Tone Spacing

Tone Spacing (MHz)

Inte

r-mod

ulat

ion

Disto

rtion

(dBc

)

Freescale Semiconductor

1 10 100-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

IM3-L

IM3-U

IM5-L

IM5-U

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

PAR

(dB)

Eff

(%)

1880 43.80 17.78 -31.33 -31.35 7.96 41.81

1960 43.80 17.91 -34.10 -33.89 8.14 41.95

2025 43.80 17.82 -34.18 -34.48 8.01 41.47

Pout = 43.8 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%

Main Solution For TDSCDMA Market

High Gain

eVBW inside to enable 160MHz VBW

Support 145MHz SBW

Cost effective with OMNI package

TM

External Use 6

AFT26H160-4S4

• NI-880XS extra-lead

• Launch = May, 2013

Performance Overview:

Frequency band: 2530MHz – 2630MHz

P3dB ~ 53.1dBm(VDD=28V),

Gain >16.1dB

Efficiency@45.0dBm =42.4%~44.1% [*]

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

PAR

(dB) Eff (%) Id (A)

2530 44.989 16.333 -33.54 -33.52 7.821 44.116 2.551

2580 44.995 16.41 -35.21 -35.62 7.756 43.683 2.579

2630 44.993 16.154 -38.27 -39.23 7.756 42.43 2.654 1 10 100

-60

-55

-50

-45

-40

-35

-30

-25

-20Inter-modulation Distortion vs. Tone Spacing

Tone Spacing (MHz)

Inter

-mod

ulatio

n Dist

ortio

n (dB

c)

Freescale Semiconductor

1 10 100-60

-55

-50

-45

-40

-35

-30

-25

-20

IM3-L

IM3-U

IM5-L

IM5-U

IM7-L

IM7-UVDD=28V, Idq=0.6A, Vpeak=0.7V

High Gain

High Efficiency (HiP)

Support 100MHz SBW

Main Solution For TDD-LTE Market

1C W-CDMA, PAR=10.3dB @ CCDF=0.01%

TM

External Use 7

Line-up Demo with Shield MMZ25332B+AFT20S015GN+AFT26H160-4S4

MMZ25332B AFT20S015GN

AFT26H160-4S4

RN2 RCP250Q1P5

HTD HYH103DZ0.0 Rogers 4350 20mil PCB

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

PAR

(dB)

Eff

(%)

2496 44.502 53.221 -31.55 -32.01 8.109 35.585

2530 44.504 52.701 -33.14 -33.19 8.365 35.96

2590 44.505 52.259 -33.88 -33.6 8.494 35.946

2630 44.497 52.231 -34.16 -33.85 8.494 36.027

2690 44.491 52.61 -35.3 -34.87 8.173 35.658

Pout = 44.5 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%

Performance Overview:

Frequency band: 2496 MHz – 2690MHz P1dB ~ 51.6 dBm, P3dB ~ 52.8dBm Gain > 52dB, Efficiency@44.5 dBm >35.5%

Turn-key Solution • Excellent performance

• 3-stage demo with compact size

• Shield and Isolator added

• Close to real application

TM

External Use 8

AFT23H200-4S2L

Performance Overview: Frequency band: 2300MHz – 2400MHz P1dB > 55dBm ,P3dB > 55.8dBm (30V) Gain >15.4dB Drain Efficiency @ 47.8dBm(8dB OBO)= 46~47%

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

PAR

(dB)

Eff

(%)

2300 47.806 15.482 -32.11 -31.59 7.885 47.222

2350 47.786 15.814 -35.2 -34.54 7.917 46.504

2400 47.811 15.941 -36.71 -35.76 7.885 46.333

Vd = 30.0V, Idq=0.8A, Vpeak = 0.6 V

1 10 100-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20Inter-modulation Distortion & Gain vs. Tone Spacing

Tone Spacing (MHz)

Inter

-mod

ulatio

n Dist

ortio

n (dB

c)

Freescale Semiconductor

1 10 10013.95

14.35

14.75

15.15

15.55

15.95

Gain

(dB)

1 10 100-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

1 10 10013.95

14.35

14.75

15.15

15.55

15.95

IM3-L

IM3-U

IM5-L

IM5-U

IM7-L

IM7-U

Gain

• NI-1230 extra-lead

• Launch = March, 2013

High power and efficiency

Cost effective (one device solution)

TM

External Use 9

AFT26HW050S

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

0.1 1 10 100

IMD

3, IM

D5 a

nd

IM

D7 (

dB

c)

Freq (MHz)

IMD3, IMD5 and IMD7 vs. Tone Spcacing

IMD3_L

IMD3_U

Performance Overview:

Frequency band: 2620MHz – 2690MHz P3dB ~ 48dBm(VDD=28), Gain ~ 15.5dB Efficiency@ 8 dB OBO > 48%

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

PAR

(dB) Eff (%)

2620 40 15.335 -33.41 -33.74 7.756 48.332

2655 40 15.551 -35.4 -35.52 7.853 48.964

2690 40 15.43 -36.43 -36.72 7.788 48.403

• NI-780 extra-lead

• Final Samples = Feb, 2013

• Launch = March, 2013

Pout = 40 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%

The Highest 2.6GHz Efficiency in the Industry

Compact Size Matching

TM

External Use 10

AFT26P100-4WS

Performance Overview:

Frequency band: 2570MHz – 2620MHz P1dB ~ 49.5dBm, P3dB ~ 51dBm(VDD=28), Gain ~ 15.5dB Efficiency@42.8dBm (8 dB OBO)>44% Efficiency@ 44dBm (7dB OBO) >47%

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

Eff

(%)

Id

(A)

2570 42.791 15.437 -32.71 -32.5 44.338 1.53

2595 42.817 15.483 -33.19 -33.44 44.773 1.524

2620 42.798 15.504 -33.66 -33.69 44.411 1.53

1 10 100-65

-60

-55

-50

-45

-40

-35

-30

-25Inter-modulation Distortion & Gain vs. Tone Spacing

Tone Spacing (MHz)

Inte

r-mod

ulat

ion

Disto

rtion

(dBc

)

Freescale Semiconductor

1 10 10012.4

12.8

13.2

13.6

14

14.4

14.8

15.2

15.6

Gain

(dB)

1 10 100-65

-60

-55

-50

-45

-40

-35

-30

-25

1 10 10012.4

12.8

13.2

13.6

14

14.4

14.8

15.2

15.6

IM3-L

IM3-U

IM5-L

IM5-U

IM7-L

IM7-U

Gain

• NI-780 Package

• eVBW Included

• Launch = March , 2013

eVBW inside to enable 150MHz VBW

150MHz VBW

TM

External Use 11

AFT26H200W03S

Performance Overview:

Frequency band: 2595MHz –2655MHz P1dB > 53dBm, P3dB > 54.5dBm(VDD=30V), Gain > 15.0dB Drain Efficiency @ 46.5dBm(8dB OBO)= 44%

• NI-1230 eVBW

• Launch = June , 2013

1 10 100-65

-60

-55

-50

-45

-40

-35

-30

-25Inter-modulation Distortion & Gain vs. Tone Spacing

Tone Spacing (MHz)

Inte

r-mod

ulat

ion

Disto

rtion

(dBc

)

Freescale Semiconductor

1 10 10012.04

12.44

12.84

13.24

13.64

14.04

14.44

14.84

15.24

Gain

(dB)

1 10 100-65

-60

-55

-50

-45

-40

-35

-30

-25

1 10 10012.04

12.44

12.84

13.24

13.64

14.04

14.44

14.84

15.24

IM3-L

IM3-U

IM5-L

IM5-U

IM7-L

IM7-U

Gain

eVBW inside to enable 220MHz VBW

Freq

(MHz)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

PAR

(dB)

Eff

(%)

2595 15.037 -33.14 -32.93 7.885 45.452

2625 15.073 -34.15 -34.8 7.853 44.842

2655 14.977 -35.26 -35.13 7.821 43.876

Pout = 46.5 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%

TM

External Use 12

AFT26H250-24S

Performance Overview:

Frequency band: 2620MHz –2690MHz P1dB > 53.5dBm, P3dB > 55dBm Gain > 15.0dB Drain Efficiency @ 47.5dBm(8dB OBO)= 41% ** All above performance is with circulator

• NI-1230-4L2L

• Launch = Nov, 2013

High power

Support 80MHz SBW

Cost effective (one device solution)

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

Alt1-L

(dBc)

Eff

(%)

2620 47.491 15.128 -35.88 -36.27 -52.56 42.464

2655 47.507 15.205 -36.69 -36.51 -52.67 41.509

2690 47.5 15.24 -37.01 -37.02 -53.28 41.099

Pout = 47.5 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%

1 10 100-80

-70

-60

-50

-40

-30

-20Inter-modulation Distortion vs. Tone Spacing

Tone Spacing (MHz)

Inter

-mod

ulatio

n Dist

ortio

n (dB

c)

Freescale Semiconductor

1 10 100-80

-70

-60

-50

-40

-30

-20

IM3-L

IM3-U

IM5-L

IM5-U

IM7-L

IM7-U

TM

External Use 13

AFT27S006N

• PLD1.5-W

• Final Sample= Aug, 2013

• Launch = Sep, 2013

720-820MHz

1805-1880MHz

2110-2170MHz

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

PAR

(dB)

Eff

(%)

720 30 22.2 -39.5 -39.1 9.1 26.1

770 30 22.8 -42.6 -42.8 9.0 24.5

820 30 22.7 -41.1 -41.7 9.0 22.7

1805 29.6 22.3 -38.9 -39.3 9.4 22.5

1842.5 29.6 22.5 -42.7 -42.9 9.1 22.7

1880 29.6 22.0 -45.3 -45.3 9.0 22.91

2110 29.7 22.0 -41.7 -42.0 9.0 20.9

2140 29.7 22.1 -43.1 -43.1 9.0 21.3

2170 29.7 22.1 -45.2 -44.8 9.0 21.7

2496 29 19.6 -43.3 -43.1 9.7 19.0

2590 29 20.3 -41.2 -40.8 9.3 19.3

2690 29 19.6 -40.1 -40.1 9.1 19.3

Vdd=28V, Idq=60mA

Across from720MHz to 2690MHz

• P-1>38dBm

• Gain>19.5dB

Broadband

High Gain

Low Cost

TM

External Use 14

AFT27S010N

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

PAR

(dB)

Eff

(%)

2496 31 18.5 -44.0 -44 9.4 18.9

2530 31 19.0 -44.5 -44.3 9.4 18.9

2580 31 19.3 -44.2 -43.8 9.4 19.2

2630 31 19.3 -43.7 -43.1 9.3 19.3

2690 31 19.0 -44.0 -44.3 9.0 19.3

1805 31.8 22.1 -42.5 -42.9 9.2 21.2

1845 31.8 22.0 -42.8 -42.9 9.1 21.6

1880 31.8 21.7 -43.3 -42.9 9.1 22.1

870 31.3 22.7 -43.6 -43.6 9.0 22.4

820 31.3 22.5 -45.0 -44.6 9.1 20.7

960 31.3 22.1 -44.7 -44.9 9.1 20.7

Vdd=28V, Idq=80mA

• PLD1.5-W

• Mature Sample= July, 2013

• Launch = Dec, 2013

Across from 720MHz to 2690MHz

►P-1>40dBm

►Gain>18.5dB

2496-2690MHz

Broadband

High Gain

Low Cost

TM

External Use 15

AFT20S015N

Freq

(MHz)

Pout

(dBm)

Gain

(dB)

Adj-L

(dBc)

Adj-U

(dBc)

PAR

(dB)

Eff

(%)

1805 35.8 18.2 -35.6 -35.2 7.4 32.8

1845 35.8 18.2 -35 -34.5 7.1 33.5

1880 35.8 18.0 -34.1 -34.2 7.0 33.9

2300 35.5 17.2 -35.6 -35.6 7.2 31.7

2350 35.5 17.2 -35.2 -34.9 7.1 31.6

2400 35.5 17.2 -34.4 -33.9 7.0 31.6

2496 35.5 16.1 -36.44 -36.04 7.3 29.1

2530 35.5 16.3 -35.55 -36.1 7.2 30.0

2580 35.5 16.4 -34.79 -34.92 7.1 30.3

2630 35.5 16.5 -34.51 -34.94 6.9 31.2

2690 35.5 16.4 -33.86 -33.69 6.6 31.2

Vdd=28V, Idq=120mA

• TO- 270-2

• Launch = April, 2013

Across from 1805MHz to 2690MHz

►P-3>42dBm

►Gain>16dB with very excellent gain flatness

Broadband

High Gain

Low Cost

TM

External Use 16

RF Cellular 2.6GHz LTE Line-up

20W 2496-2690MHz PA Solution

MMZ25332B MMDS25254H AFT27S006N AFT26H160

• 2-stage driver amplifier

• 5V GaAs

• QFN 3x3

• 33 dBm peak power

• Gain: 27 dB

• Advanced Doherty

Alignment Module

• 5V

• QFN 6x6

• Doherty coupler

together with digitally

selectable phase

shifters and step

attenuators for

improved Doherty

performance

• Wideband transistor

• 28V LDMOS

• PLD-1.5W package

• 6W peak output power

• Average power of

28.8dBm

• Gain: 21 dB

• Drain Efficiency: 21%

• Asymmetric in-package

Doherty device

• 28V LDMOS

• NI-880XS-4L4S

package

• 160W peak power

• Average power of 32W

• Gain: 15 dB

• Drain Efficiency: 45.5%

Doherty

Final Driver ADAM

Pre-Driv

er

TM

External Use 17

Designing with Freescale

Tailored live, hands-on

training in a city near you

2014 seminar topics include

• QorIQ product family update

• Kinetis K, L, E, V series MCU product training

freescale.com/DwF

TM

© 2014 Freescale Semiconductor, Inc. | External Use

www.Freescale.com