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The top documents tagged [nm device]
Os note
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Feasible Mott FET: Concept, Obstacle, and Future
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Towards novel Mott FET: Concept, Present Status, and Future
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2010 Electronic Materials Conference Ashish Baraskar June 23-25, 2010 – Notre Dame, IN 1 In-situ Ohmic Contacts to p-InGaAs Ashish Baraskar, Vibhor Jain,
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IWCE 10 Purdue University October 24-27 2004 Intrinsic Parameter Fluctuations in Conventional MOSFETs at the scaling Limit: A Statistical Study *F. Adamu-Lema,
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Nanofluidic Microsystems for Advanced Biosample Preparation Ying-Chih Wang (
[email protected]
) 1, Jianping Fu, Yong-Ak Song and Jongyoon Han 2,3 1 Department
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letcure01_06_21_2010.pdf
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Overview
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