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SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 1 Evaluation of HiCUM for Modeling DC, S-parameter and
SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 1 Evaluation of HiCUM for Modeling DC, S-parameter and
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Evolution and Prospect of Single-Photon Avalanche Diodes and Quenching Circuits Politecnico di Milano, Dip. Elettronica e Informazione, Milano, Italy S
Evolution and Prospect of Single-Photon Avalanche Diodes and Quenching Circuits Politecnico di Milano, Dip. Elettronica e Informazione, Milano, Italy S
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Laboratory for Sub-100nm Design Department of Electrical and Computer Engineering Novel dual-V th independent-gate FinFET circuits Masoud Rostami and Kartik
Laboratory for Sub-100nm Design Department of Electrical and Computer Engineering Novel dual-V th independent-gate FinFET circuits Masoud Rostami and Kartik
216 views
IndDG: A New Model for Independent Double-Gate MOSFET Santanu Mahapatra Nano-Scale Device Research Lab Indian Institute of Science Bangalore Email: santanu@cedt.iisc.ernet.in
IndDG: A New Model for Independent Double-Gate MOSFET Santanu Mahapatra Nano-Scale Device Research Lab Indian Institute of Science Bangalore Email: [email protected]
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EE698E Term Paper
EE698E Term Paper
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SiNANO Workshop Carrier mobility enhancement in strained silicon germanium channels David Leadley University of Warwick
SiNANO Workshop Carrier mobility enhancement in strained silicon germanium channels David Leadley University of Warwick
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1 SOI BiCMOS an Emerging Mixed-Signal Technology Platform Tak H. Ning
1 SOI BiCMOS an Emerging Mixed-Signal Technology Platform Tak H. Ning
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1 Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Uttam Singisetti*, Man Hoi Wong, Sansaptak Dasgupta, Nidhi,
1 Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Uttam Singisetti*, Man Hoi Wong, Sansaptak Dasgupta, Nidhi,
218 views
Part 0 Intro
Part 0 Intro
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IEEE Central NC EDS/MTT/SSC Society Friday, Nov. 5th, 2010 The Nanoscale MOSFET: Physics and Limits Mark Lundstrom 1 Electrical and Computer Engineering
IEEE Central NC EDS/MTT/SSC Society Friday, Nov. 5th, 2010 The Nanoscale MOSFET: Physics and Limits Mark Lundstrom 1 Electrical and Computer Engineering
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1 Carbon Nanotube Field-Effect Transistors Carbon Nanotube Field-Effect Transistors and their possible applications D.L. Pulfrey Department of Electrical
1 Carbon Nanotube Field-Effect Transistors Carbon Nanotube Field-Effect Transistors and their possible applications D.L. Pulfrey Department of Electrical
230 views
From Ashcroft and Mermin, Solid State Physics.. NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow. Roukes Group Cal Tech Tito
From Ashcroft and Mermin, Solid State Physics.. NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow. Roukes Group Cal Tech Tito
280 views