surface chemistry and device response of algan/gan sensors

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Surface Chemistry and Device Response on AlGaN/GaN surfaces Jeremy Gillbanks – September 2015 Supervised by Prof. Giacinta Parish and Prof. Brett Nener

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Page 1: Surface Chemistry and Device Response of AlGaN/GaN Sensors

Surface Chemistry and Device Response on AlGaN/GaN surfaces

Jeremy Gillbanks – September 2015Supervised by

Prof. Giacinta Parish and Prof. Brett Nener

Page 2: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Sensor Context

Semiconductor Doping

High Electron Mobility Transistors

Substrate Design

Field Effect Transistors

Chemical Sensors

Chemical Sensors

Field Effect Transistors

CHEMFETs ISFETs

Silicon-based devices

Heterostructure-based devices

HEMTs

AlGaN/GaN AlGaAs/GaAs

BioFETs

Other Sensors

Page 3: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Our Sensors

Semiconductor Doping

High Electron Mobility Transistors

Substrate Design

Field Effect Transistors

Chemical Sensors

Chemical Sensors

Field Effect Transistors

CHEMFETs ISFETs

Silicon-based devices

Heterostructure-based devices

HEMTs

AlGaN/GaN AlGaAs/GaAs

BioFETs

Other Sensors

Page 4: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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AlGaN/GaN Sensors

Advantages over traditional ISFET Sensors

– Stability– Low cost– No reference electrode

Applications– Recycled water

monitoring– Lab-on-a-chip sensor

arrays

AlGaN capped transistor Ren 2008

Sensor array designAsadnia 2015

Active area

Page 5: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Research Gap

Previous research completed by the Microelectronics Research Group at UWA

Demonstrating ionic concentration, regardless of pH (2010)

Dipolar molecule orientation and sensor response

Sensor selectivity toward negative ions (2010)

GaN cap has greater affinity to Cl- ions than AlGaN (2014)

2DEG conductivity increase with positive charge build up (2014)

Page 6: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Project Objectives

Aim: Molecular contact angle vs. device response

Glycine

 

Benzil (non-polar)

6-Amino-2-Naphthoic Acid

Hypothesis:• Adhesion via negatively charged

carboxyl group• Dipolar molecules will affect

device response via molecular orientation

This is the first time dipolar molecular orientation has been investigated on a GaN capped device.

Page 7: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Molecule Selection

Glycine 6-Amino-2-Naphthoic Acid

NEXAFS conducted at AS

C NBackground Correction

Choose Step EdgeGaussian Peak

FittingSpectral Subtraction

Bond Angle CalculationMolecular

OrientationCompare to Device

Response

O

Benzil

Experimental Procedure

6-Amino-2-Naphthoic Acid only

Page 8: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Molecule Selection

Glycine 6-Amino-2-Naphthoic Acid

NEXAFS conducted at AS

C NBackground Correction

Choose Step EdgeGaussian Peak

FittingSpectral Subtraction

Bond Angle CalculationMolecular

OrientationCompare to Device

Response

O

Benzil

Project Scope

6-Amino-2-Naphthoic Acid only

Page 9: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Molecule Selection

Glycine 6-Amino-2-Naphthoic Acid

NEXAFS conducted at AS

C NBackground Correction

Choose Step EdgeGaussian Peak

FittingSpectral Subtraction

Bond Angle CalculationMolecular

OrientationCompare to Device

Response

O

Benzil

Seminar Scope

6-Amino-2-Naphthoic Acid only

Page 10: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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NEXAFS: How it works

• Near Edge X-ray Absorption Fine Structure

• Incident photon energy is near the edge of the ionisation potential of the scanned atom

• Ammeter allows replacement current to be recorded from photoelectron loss

• Allows measurement of individual molecular orbitals for C, N and O atoms

Experimental SetupMennell 2015

This is the first time a NEXAFS study has been conducted on a GaN substrate

Page 11: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Non-linear curve fitting

6-Amino-2-Naphthoic Acid Nitrogen K-edge scan

Page 12: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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XPS

X-ray Photoelectron Spectroscopy

• Composition, thickness

6-Amino-2-Naphthoic AcidNitrogen XPS K-edge scan

6-Amino-2-Naphthoic AcidGallium XPS K-edge scan

Before deposition

After deposition

After deposition

Before deposition

Page 13: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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BenzilNitrogen K-edge scan

Page 14: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Spectral Subtraction

6-Amino-2-Naphthoic Acid Curve Fitting

Page 15: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Identifying the peak

Measured angle from nitrogen scan: 43.7˚ ± 10˚Measured angle from carbon scan: 46˚ ± 2˚ (Home 2015)

Naphthoic Acid Peak fit at 404 eV (corresponds to C-N σ* bond)

Page 16: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Angle of naphthoic acid to surface

I can corroborate Michael Home’s finding that 6-amino-2-naphthoic acid lies at 44˚ to the device surface.

44˚

Device Surface

Page 17: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Future Work• Ensure adequate coverage

• Normalise on the device surface

• Test simple alcohols/acids– Methanol– Formic acid– Benzoic acid

• Test simple amine groups– Methylamine– Aniline

• Test simple amino acids with benzene rings

– Meta-, ortho-, or para-amino benzoic acid

• Later: test larger molecules– Tyrosine

Tyrosine

Formic acid Aniline

Page 18: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Key Points

• We have been the first to successfully orientate glycine and 6-amino-2-naphthoic acid on a GaN capped device– Every molecule to be sensed has a specific angle at

which it adheres to the surface– The orientation effects the device response

• Future work has been successfully identified

• Special thanks to– Prof. Giacinta Parish & Prof. Brett Nener– Farah Khir, Matt Myers, Murray Baker– Michael Home, Chris Mennell, Ben Sutton– The III-N research group

Page 19: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Deleted Scenes

Page 20: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Background Correction

• Remove oscillations in incident photon intensity over time and energy

• Au leaf used (300 eV – 1000 eV)

Device setup at the Australian SynchrotronCourtesy: F. Khir

Page 21: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Glycine (nitrogen scan)

Page 22: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Benzil

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Sources of Error & Biases (1/2)

• Noise– Using peak areas instead of peak heights decreases

effect of noise on local regression• Local regression formula inadequately smoothed

• Back scattered electrons– Reduced to insignificance due to multiple incident angles– Highly energetic photons (with adequate coverage)

shouldn’t penetrate the adsorbate• Photoelectrons generated from surrounding atoms

• Thermal motion ineffectively averaged between scans

Page 24: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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… (2/2)

• Monochromator’s linearly polarised light– K-shell spectra are highly polarisation-dependent– Linear polarisation simplifies the dipole matrix element

• Replacement current efficiency (resistance, etc…)

• Inconsistent incident photon intensity in excess of what is corrected for using the reference foil

• Substrate does not display three-fold or higher symmetry

• Adsorbate not a homogenous layer

• Hydrogen bonds effect spectra in a measurable way

• Ineffective spectral subtraction

• Adsorbate damaged during x-ray scan

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Limitations

• Building block model– Used when you have a new molecule that has not

been scanned using NEXAFS before• E.g. 6-amino-2-naphthoic acid or benzil

– Limitations:• Conjugated molecular orbitals are difficult to identify

during deconvolution• More of a problem for carbon K-edge NEXAFS scans

Page 26: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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Why not more samples?

• AS has high resolution– Resolution: 0.1 eV– Energy Range: ~40 eV– 0.25% steps

• Trends successfully identified => conclusions are valid

• Common practice is to use best spectra, not to average

• Experiment cost: ~$600k

Page 27: Surface Chemistry and Device Response of AlGaN/GaN Sensors

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References1. Title Slide: Substratehttp

://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/Articleimage/2006/DT/b515727g/b515727g-f5.gif

2. Title Slide: Australian Synchrotron logohttps://events.synchrotron.org.au/event/1/picture/10.jpg

3. Title Slide: Microelectronics Research Grouphttp://mrg.ee.uwa.edu.au/images/microelectonicsResearchGrou.gif

4. Slide 5: Glycinehttp://www.actgene.com/images/Glycine.jpg

5. Slide 5: 6-Amino-2-Naphthoic Acidhttp://www.sigmaaldrich.com/content/dam/sigma-aldrich/structure6/165/mfcd01861831.eps/_jcr_content/renditions/mfcd01861831-medium.png

6. Slide 5: Benzilhttp://www.sigmaaldrich.com/content/dam/sigma-aldrich/structure3/116/mfcd00003080.eps/_jcr_content/renditions/mfcd00003080-medium.png

7. Slide 15: 6-Amino-2-Naphthoic Acidhttp://pubchem.ncbi.nlm.nih.gov/image/img3d.cgi?cid=2733954

8. Slide 16: Formic Acidhttp://chem-tracking.de/onewebstatic/ed4ba8c401-Ameisensäure.jpg

9. Slide 16: Anilinehttp://chemwiki.ucdavis.edu/@api/deki/files/9113/aniline.png

10. Slide 16: Tyrosinehttp://img1.wikia.nocookie.net/__cb20140401122944/resscientiae/images/2/29/Tyrosine.jpg

All other slides are of the author’s creation unless otherwise cited.