STB4NB80N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP

PowerMESH MOSFETPRELIMINARY DATA

n TYPICAL RDS(on) = 3 n EXTREMELY HIGH dv/dt CAPABILITYn 100% AVALANCHE TESTED n VERY LOW INTRINSIC CAPACITANCESn GATE CHARGE MINIMIZED

DESCRIPTION Using the latest high voltage MESH OVERLAYprocess, SGS-Thomson has designed anadvanced family of power MOSFETs withoutstanding performances. The new patentpending strip layout coupled with the Companysproprietary edge termination structure, gives thelowest RDS(on) per area, exceptional avalancheand dv/dt capabilities and unrivalled gate chargeand switching characteristics.

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHINGn SWITCH MODE POWER SUPPLIES (SMPS)n DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLEPOWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

June 1998

13

1 23

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value UnitSTB4NB80 STB4NB80FP

VDS Drain-source Voltage (VGS = 0) 800 VVDGR Drain- gate Voltage (RGS = 20 k) 800 VVGS Gate-source Voltage 30 VID Drain Current (continuous) at Tc = 25 oC 4 4(*) AID Drain Current (continuous) at Tc = 100 oC 2.4 2.4(*) A

IDM() Drain Current (pulsed) 16 16 APtot Total Dissipation at Tc = 25 oC 100 35 W

Derating Factor 1 0.28 W/oCdv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns

VISO Insulation Withstand Voltage (DC) 2000 VTstg Storage Temperature -65 to 150 oCTj Max. Operating Junction Temperature 150 oC

() Pulse width limited by safe operating area (1) ISD 4 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX (*) Limited only by maximum temperature allowed

TYPE VDSS RDS(on) IDSTB4NB80STB4NB80FP

800 V800 V

3.3 3.3

4 A4 A

I2PAKTO-262

(Suffix "-1")

D2PAKTO-263

(Suffix "T4")

1/6

THERMAL DATA

TO-263 TO-262Rthj-case Thermal Resistance Junction-case Max 1 3.6 oC/WRthj-ambRthc-sink

Tl

Thermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose

62.50.5300

oC/WoC/W

oC

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value UnitIAR Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)4 A

EAS Single Pulse Avalanche Energy(starting Tj = 25 oC, ID = IAR, VDD = 50 V)

230 mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)OFF

Symbol Parameter Test Conditions Min. Typ. Max. UnitV(BR)DSS Drain-source

Breakdown VoltageID = 250 A VGS = 0 800 V

IDSS Zero Gate VoltageDrain Current (VGS = 0)

VDS = Max RatingVDS = Max Rating Tc = 125 oC

150

AA

IGSS Gate-body LeakageCurrent (VDS = 0)

VGS = 30 V 100 nA

ON ()Symbol Parameter Test Conditions Min. Typ. Max. UnitVGS(th) Gate Threshold

VoltageVDS = VGS ID = 250 A 3 4 5 V

RDS(on) Static Drain-source OnResistance

VGS = 10V ID = 2 A 3 3.3

ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V

4 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unitgfs () Forward

TransconductanceVDS > ID(on) x RDS(on)max ID = 2 A 1.8 S

CissCossCrss

Input CapacitanceOutput CapacitanceReverse TransferCapacitance

VDS = 25 V f = 1 MHz VGS = 0 700959

92012612

pFpFpF

STB4NB80

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ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unittd(on)

trTurn-on TimeRise Time

VDD = 400 V ID = 2 ARG = 4.7 VGS = 10 V

148

2012

nsns

QgQgsQgd

Total Gate ChargeGate-Source ChargeGate-Drain Charge

VDD = 640 V ID = 4 A VGS = 10 V 2179

29 nCnCnC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unittr(Voff)

tftc

Off-voltage Rise TimeFall TimeCross-over Time

VDD = 640V ID = 4 ARG = 4.7 VGS = 10 V

129

16

171322

nsnsns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. UnitISD

ISDM()Source-drain CurrentSource-drain Current(pulsed)

416

AA

VSD () Forward On Voltage ISD =4 A VGS = 0 1.6 Vtrr

Qrr

IRRM

Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrent

ISD = 4 A di/dt = 100 A/sVDD = 100 V Tj = 150 oC

600

3.3

11

ns

C

A

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %() Pulse width limited by safe operating area

STB4NB80

3/6

DIM.mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368

E 10 10.28 0.393 0.404

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

L2

L3

L

B2

B

G

E A

C2

D

C

A1

P011P6/C

TO-263 (D2PAK) MECHANICAL DATA

STB4NB80

4/6

DIM.mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B1 1.2 1.38 0.047 0.054

B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368

e 2.44 2.64 0.096 0.104

E 10 10.28 0.393 0.404

L 13.2 13.5 0.519 0.531

L1 3.48 3.78 0.137 0.149

L2 1.27 1.4 0.050 0.055

L

L1

B2 B

D

EA

C2

CA1

L2

e

P011P5/C

TO-262 (I2PAK) MECHANICAL DATA

STB4NB80

5/6

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STB4NB80

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