spin-dependent scattering from gated obstacles in graphene systems

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Spin-Dependent Scattering From Gated Obstacles in Graphene Systems M.M. Asmar & S.E. Ulloa Ohio University

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Spin-Dependent Scattering From Gated Obstacles in Graphene Systems . M.M. Asmar & S.E. Ulloa Ohio University . Outline . Motivation. The studied system and the mathematical approach. Results and analysis. Conclusions. Motivation . - PowerPoint PPT Presentation

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Page 1: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

Spin-Dependent Scattering From Gated Obstacles in Graphene

Systems M.M. Asmar & S.E. Ulloa

Ohio University

Page 2: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

Outline Motivation.

The studied system and the mathematical approach.

Results and analysis.

Conclusions.

Page 3: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

Because of the high importance of spintronics on which the spin orbit interactions play a basic role, we study and compare the relaxation times in the presence of a gated potential to the relaxation times in the presence of SOI in graphene systems.

The importance of the relaxation times is based on their proportionality to the conductance of the system.

Motivation

Page 4: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

The studied system and the mathematical approach

The Hamiltonian of the system:

Page 5: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

Wave functions (at K point) are :

, and From the analytical form of the wave function we can extract some

information such as Phase shifts Differential cross sections Total cross sections Transport cross section which is inversely proportional to the relaxation time Conductance, which is proportional to the relaxation time

Total angular momentum

• C. L. Kane and E. J. Mele, PRL 95, 226801 (2005).

m

Page 6: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

Results and Analysis In the presence of a gated obstacle and no SOI

Ramsauer-Townsend Effect at V/2

•J. Milton Pereira, Jr., V. Mlinar, and F. M. Peeter, P RB 74, 045424 (2006)

Page 7: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

In the presence gated obstacles and Intrinsic SOI

• C. L. Kane and E. J. Mele, PRL 95, 226801 (2005).• Daniel Huertas-Hernando, F. Guinea,and Arne Brataas1, PRB 74,

155426 (2006).

Page 8: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

In the presence of the gated obstacle and Rashba SOI

Comparable relaxation times

• Gierz, et al., arXiv:1004.1573.• J. Sánchez-Barriga, et al. , Diamond & Related Materials 19

(2010) 734–74

Page 9: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

Longer spin flip relaxation times

• A.H. Castro Neto and F. Guinea, PRL 103, 026804 (2009).• N. Tombros et al., Nature (London) 448, 571 (2007).

Page 10: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

In the presence of the gated obstacle RSOI and ISOI

Page 11: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

ConclusionsQuasi bound states reflect themselves as

resonances in the cross section.Intrinsic SO decreases the scattering time and

shifts the resonances in the cross section.Spin flip relaxation times are much longer that

the momentum relaxation times at low energies.Momentum and spin-flip scattering times are

comparable at relatively high energies.Spin flip times and momentum relaxation times

are equal at both the K and K’ point.

Page 12: Spin-Dependent Scattering From Gated Obstacles in Graphene Systems

Thank You