specification -...

H04-004-07

Fuji Electric Co.,Ltd.Matsumoto Factory

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

7MBR25UA120

MS6M 0731

115

MS6M 0731

SPECIFICATION

Power Integrated Module

Aug. 02 ’03

Aug. 02 ’03

Y.Kobayashi

T.Miyasaka

K.Yamada

T.Fujihiraa

H04-004-06

R e v i s e d R e c o r d s

DateClassi-fication Ind. Content

Applieddate Drawn Checked Approved

enactment Issueddate

MS6M 0731 215

Aug.-02- ’03

a

K.YamadaT.Miyasaka

T.Fujihira

aRevision K.YamadaT.Miyasaka

Dec.-17-’03 Y.Kobayashi

Revised VCE(sat)(P5/15)Revised sw-time (P5/15, 11/15)Revised trr,Irr (P12/15)Revised VF(P5/15, 12/15)Revised sw-loss (P11/15)Revised Warning (P14/15, 15/15)

Y.Seki

H04-004-03

15MS6M 0731a3

7MBR25UA120

2. Equivalent circuit

1. Outline Drawing ( Unit : mm )

( ) shows reference dimension.

23(N)

2(S) 3(T)1(R)

21(P) 22(P1)

7(B)

24(N1)

13(Gx)

19(Eu)

20(Gu)

18(Gv)

17(Ev)

4(U)

12(Gy) 11(Gz)

5(V)

15(Ew)

16(Gw)

6(W)

10(En)

98

[ Converter ] [ Brake ] [ Inverter ] [ Thermistor ]

14(Gb)

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15MS6M 0731a

4

3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ）

Tc=25°CTc=80°CTc=25°CTc=80°C

Tc=25°CTc=80°CTc=25°CTc=80°C

(*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5~3.5 Nm (M5)

Viso

-40 ~ +125

UnitsMaximumRatings

A

°C

W

1ms

1ms

2500

ScrewTorque

-

Collector-Emitter voltage VCES

Tstg

Mounting *3

between terminal and copper base *1between thermistor and others *2

Storage temperatureIsolationvoltage

Junction temperature

-Ic 2550

115-Ic pulse

Pc

Tj

1 device

150

VAC

N m3.5

V±20 V

1200 VV

25

Items Symbols Conditions

VCESIn

verte

rCollector-Emitter voltageGate-Emitter voltage

Collector current

Collector Power Dissipation

VGES

AC : 1min.

1200

Ic

Icp

25155030

Continuous

Continuous

Tj=150°C, 10mshalf sine wave

Collector currentIc

W

Gate-Emitter voltage VGES ±20

15

1200

Icp 1ms5030

Repetitive peak reverse Voltage (Diode) V

Bra

ke

Collector Power Dissipation Pc 1 device 115VRRM

A

A

V50Hz/60Hz

Average Output Current

Repetitive peak reverse Voltage VRRM 1600

sine wave25 AIo

Con

verte

r

A2sI2tI2t (Non-Repetitive)260338

Surge Current (Non-Repetitive) IFSM

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5

4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)

- 1.0 mA-Con

verte

r

Reverse current IRRM VR=1600V

1.50V

-VFM

Gate-Emitterleakage current

chip - 1.10Forward on voltage

VGE=0VIF = 25A

teminal - 1.201.0 mAIRRMReverse current VR=1200V - -

0.370.07 0.30

toffRg = 68 Ω

-μs

tr Ic = 25A - a 0.28 0.60VGE=±15V 1.00

tf -

-

Turn-on timeton Vcc = 600V - a 0.41 1.20

Collector-Emittersaturation voltage

VCE(sat)(terminal)

VGE=15V

VCE(sat)(chip)

Ic = 25ATj= 25°CTj=125°C

- 2.30 2.80- a 2.75 -

nAVGE=±20V

Tj= 25°C

V- 2.10 2.60- a 2.55

Tj=125°C

Forward on voltage

VF(terminal)

Tj=125°CTj= 25°CTj=125°C

Tj= 25°CTj=125°C

Ic = 25A

VGE=15VTj= 25°C

IGESVCE = 0VVCE = 1200V

ICES

K3305 3375 3450T = 25/50°CTher

mist

or Resistance RT = 25°C

B495

B value

V-

8.5 V

2.80

-2.60

nA

1.0 mA

200

-

-

-

VCE = 1200V

6.5

VGE = 0V

Ic = 25mAVCE = 20V

-

a 0.28

0.07

VCE = 0V-

4.5

a 2.55- 2.10

-

2

VGE=±20V

1.00μs

nF-

0.30

1.200.60

-

trr

a 2.95 a 3.55

2.30- a 2.75

---

-

VF(chip)

Tj= 25°C -Tj=125°C

IF = 25A

-

-

ΩT =100°C 465

-

V

a 2.35

-a 2.75 a 3.35

a 2.55-

520

-

-

- 200

1.0-

μsIF = 25A

- 5000 -

- 0.35

mA

-

VGE = 0VReverse recovery timeZero gate voltageCollector current

Bra

ke

Turn-off time

IGES

Zero gate voltageCollector current

ICES

tonCiesInput capacitance

Collector-Emittersaturation voltage

VCE(sat)(terminal)

VCE(sat)(chip)

Gate-Emitterthreshold voltage

0.37-0.03-tr (i)

VCE=10V,VGE=0V,f=1MHzVcc = 600VIc = 25AVGE=±15V

Turn-off time

Turn-on time

Inve

rter

a 0.41

VGE(th)

Rg = 68 Ωtf

toff

tr

VGE=0V

UnitsItems Symbols ConditionsCharacteristics

min. typ. max.

Gate-Emitterleakage current

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6

5. Thermal resistance characteristics

Brake IGBTConverter Diode

* This is the value which is defined mounting on the additional cooling fin with thermal compound.

6. Indication on module

7.Applicable category This specification is applied to IGBT Module named 7MBR25UA120 .

8.Storage and transportation notes・ The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .

・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface.

・ Avoid exposure to corrosive gases and dust.

・ Avoid excessive external force on the module.

・ Store modules with unprocessed terminals.

・ Do not drop or otherwise shock the modules when transporting.

9. Definitions of switching time

10. Packing and LabelingDisplay on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box

1.070.90

°C/W

25A 1200V

7MBR25UA120

- 1.07- - 1.58

Thermal resistance(1device)--

--

Rth(j-c)

Inverter IGBTInverter FWD

-

-Contact Thermal resistance(1device) Rth(c-f) with Thermal Compound (*) 0.05-

Unitsmin. typ. max.

Items Symbols ConditionsCharacteristics

Lot.No. Place of manufacturing (code)

L

Vcc

Ic

VCERG

VGE

VGE

VCE

Ic0V0A

0V

10%

90%

10% 10%

90%

90%

0V

Ic

VCE

～～～～

～～

onononontttt

rrrrtttt

r(i)r(i)r(i)r(i)tttt

offoffoffofftttt

fffftttt

rrrrrrrrIIII

rrrrrrrrtttt

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15MS6M 0731a

11. Reliability test results

7

Reliability Test Items

Testcate-gories

Test items Test methods and conditions

Referencenorms

EIAJ ED-4701(Aug.-2001 edition)

Numberof

sample

Accept-ancenumber

1 Terminal Strength Pull force : 20N Test Method 401 5 ( 0 : 1 )(Pull test) Test time : 10±1 sec. MethodⅠ

2 Mounting Strength Screw torque : 2.5 ~ 3.5 N･m (M5) Test Method 402 5 ( 0 : 1 )Test time : 10±1 sec. methodⅡ

3 Vibration Range of frequency : 10 ~ 500Hz Test Method 403 5 ( 0 : 1 )Sweeping time : 15 min. Reference 1Acceleration : 100m/s2 Condition code BSweeping direction : Each X,Y,Z axisTest time : 6 hr. (2hr./direction)

4 Shock Maximum acceleration : 5000m/s2 Test Method 404 5 ( 0 : 1 )Pulse width : 1.0msec. Condition code BDirection : Each X,Y,Z axisTest time : 3 times/direction

5 Solderabitlity Solder temp. : 235±5 Test Method 303 5 ( 0 : 1 )Immersion time : 5±0.5sec. Condition code ATest time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body.

6 Resistance to Solder temp. : 260±5 Test Method 302 5 ( 0 : 1 )Soldering Heat Immersion time : 10±1sec. Condition code A

Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body.

1 High Temperature Storage temp. : 125±5 Test Method 201 5 ( 0 : 1 ) Storage Test duration : 1000hr.

2 Low Temperature Storage temp. : -40±5 Test Method 202 5 ( 0 : 1 ) Storage Test duration : 1000hr.

3 Temperature Storage temp. : 85±2 Test Method 103 5 ( 0 : 1 ) Humidity Relative humidity : 85±5% Test code C Storage Test duration : 1000hr.

4 Unsaturated Test temp. : 120±2 Test Method 103 5 ( 0 : 1 ) Pressure Cooker Atmospheric pressure : 1.7 × 105 Pa Test code E

Test humidity : 85±5%Test duration : 96hr.

5 Temperature Test Method 105 5 ( 0 : 1 ) Cycle Test temp. : Low temp. -40±5

High temp. 125 ±5

RT 5 ~ 35 Dwell time : High ~ RT ~ Low ~ RT

1hr. 0.5hr. 1hr. 0.5hr.Number of cycles : 100 cycles

6 Thermal Shock +0 Test Method 307 5 ( 0 : 1 )Test temp. : High temp. 100 -5 method Ⅰ

+5 Condition code A Low temp. 0 -0

Used liquid : Water with ice and boiling waterDipping time : 5 min. par each temp.Transfer time : 10 sec.Number of cycles : 10 cycles

Mec

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8

Reliability Test Items

Testcate-gories

Test items Test methods and conditions

Referencenorms


Numberof

sample

Accept-ancenumber

1 High temperature Test Method 101 5 ( 0 : 1 ) Reverse Bias Test temp. : Ta = 125±5

(Tj ≦ 150 )Bias Voltage : VC = 0.8×VCESBias Method : Applied DC voltage to C-E

VGE = 0VTest duration : 1000hr.

2 High temperature Test Method 101 5 ( 0 : 1 ) Bias (for gate) Test temp. : Ta = 125±5

(Tj ≦ 150 )Bias Voltage : VC = VGE = +20V or -20VBias Method : Applied DC voltage to G-E

VCE = 0VTest duration : 1000hr.

3 Temperature Test Method 102 5 ( 0 : 1 )Humidity Bias Test temp. : 85±2 oC Condition code C

Relative humidity : 85±5%Bias Voltage : VC = 0.8×VCESBias Method : Applied DC voltage to C-E

VGE = 0VTest duration : 1000hr.

4 Intermitted ON time : 2 sec. Test Method 106 5 ( 0 : 1 ) Operating Life OFF time : 18 sec.(Power cycle) Test temp. : ∆ Tj=100±5 deg( for IGBT ) Tj ≦ 150 , Ta=25±5

Number of cycles : 15000 cycles

Endu

ranc

e Te

sts

Failure Criteria

Item Characteristic Symbol Failure criteria Unit NoteLower limit Upper limit

Electrical Leakage current ICES - USL×2 mA characteristic ±IGES - USL×2 µA

Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mASaturation voltage VCE(sat) - USL×1.2 VForward voltage VF - USL×1.2 VThermal IGBT ∆ VGE - USL×1.2 mV resistance or ∆ VCE

FWD ∆ VF - USL×1.2 mVIsolation voltage Viso Broken insulation -

Visual Visual inspection inspection Peeling - The visual sample -

Plating and the others

LSL : Lower specified limit.USL : Upper specified limit.

Note : Each parameter measurement read-outs shall be made after stabilizing the componentsat room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.And in case of the wetting tests, for example, moisture resistance tests, each componentshall be made wipe or dry completely before the measurement.

Each parameter measurement read-outs shall be made after stabilizing the componentsat room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.And in case of the wetting tests, for example, moisture resistance tests, each componentshall be made wipe or dry completely before the measurement.

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9

Reliability Test Results

Testcate-gorie

s

Test items

Referencenorms


Numberof testsample

Numberof

failuresample

1 Terminal Strength Test Method 401 5 0(Pull test) MethodⅠ

2 Mounting Strength Test Method 402 5 0methodⅡ

3 Vibration Test Method 403 5 0Condition code B

4 Shock Test Method 404 5 0Condition code B

5 Solderabitlity Test Method 303 5 0Condition code A

6 Resistance to Soldering Heat Test Method 302 5 0Condition code A

1 High Temperature Storage Test Method 201 5 0

2 Low Temperature Storage Test Method 202 5 0

3 Temperature Humidity Test Method 103 5 0 Storage Test code C

4 Unsaturated Test Method 103 5 0 Pressure Cooker Test code E

5 Temperature Cycle Test Method 105 5 0

6 Thermal Shock Test Method 307 5 0method Ⅰ

Condition code A

1 High temperature Reverse Bias Test Method 101 5 0

2 High temperature Bias Test Method 101 5 0( for gate )

3 Temperature Humidity Bias Test Method 102 5 0Condition code C

4 Intermitted Operating Life Test Method 106 5 0(Power cycling)( for IGBT )

Endu

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Mec

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Envi

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10

[ Inverter ] [ Inverter ]


Collector current vs. Collector-Emitter voltage (typ.)Tj= 125°C / chip

Dynamic Gate charge (typ.)


Collector current vs. Collector-Emitter voltage (typ.)VGE=15V / chip Tj=25°C / chip


Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Vcc=600V， Ic=25A，Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°CCapacitance vs. Collector-Emitter voltage (typ.)

0

10

20

30

40

0 1 2 3 4 5

Col

lect

or c

urre

nt :

Ic [A

]

Collector-Emitter voltage : VCE [V]

VGE=20V 15V 12V

10V

8V

0

10

20

30

40

0 1 2 3 4 5

Col

lect

or c

urre

nt :

Ic [A

]


VGE=20V 15V 12V

10V

8V

0

10

20

30

40

0 1 2 3 4 5

Col

lect

or c

urre

nt :

Ic [A

]


Tj=125°CTj=25°C

0

2

4

6

8

10

5 10 15 20 25

Col

lect

or -

Emitt

er v

olta

ge :

VC

E [

V ]

Gate - Emitter voltage : VGE [ V ]

Ic=30AIc=15AIc= 7.5A

0.1

1.0

10.0

0 10 20 30

Cap

acita

nce

: C

ies,

Coe

s, C

res

[ nF

]


Cies

Coes

Cres

0 30 60 90

Col

lect

or-E

mitt

er v

olta

ge :

VC

E [ 2

00V

/div

]G

ate

- Em

itter

vol

tage

: V

GE

[ 5V

/div

]

Gate charge : Qg [ nC ]

0

VGE

VCE

H04-004-03

15MS6M 0731a

11

a a

a a

a

+VGE=15V,-VGE <= 15V, RG >= 68Ω ,Tj <= 125°C

Switching time vs. Gate resistance (typ.)Vcc=600V, VGE=±15V, Rg=68Ω

Switching loss vs. Gate resistance (typ.)[ Inverter ] [ Inverter ]

Vcc=600V, Ic=25A, VGE=±15V, Tj= 25°CSwitching loss vs. Collector current (typ.)

Reverse bias safe operating area (max.)Vcc=600V, Ic=25A, VGE=±15V, Tj= 125°C



Switching time vs. Collector current (typ.)Vcc=600V, VGE=±15V, Rg=68Ω, Tj= 25°C

Switching time vs. Collector current (typ.)Vcc=600V, VGE=±15V, Rg=68Ω, Tj=125°C

10

100

1000

10000

0 10 20 30

Switc

hing

tim

e :

ton,

tr, t

off,

tf [

nsec

]

Collector current : Ic [ A ]

tontofftr

tf

10

100

1000

10000

0 10 20 30

Switc

hing

tim

e :

ton,

tr, t

off,

tf [

nsec

]


tofftontr

tf

10

100

1000

10000

10.0 100.0 1000.0

Switc

hing

tim

e :

ton,

tr, t

off,

tf [

nsec

]

Gate resistance : Rg [ Ω ]

tr

tf

toffton

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

0 10 20 30 40

Switc

hing

loss

: E

on, E

off,

Err

[ mJ/

puls

e ]


Eon(125°C)

Eon(25°C)

Eoff(125°C)

Err(125°C)Err(25°C)

Eoff(25°C)

0

5

10

15

10.0 100.0 1000.0

Switc

hing

loss

: E

on, E

off,

Err

[ mJ/

puls

e ]

Gate resistance : Rg [ Ω ]

Eoff

Err

Eon

0

25

50

75

0 400 800 1200

Col

lect

or c

urre

nt :

Ic [

A ]

Collector - Emitter voltage : VCE [ V ]

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15MS6M 0731a

12

a a


[ Thermistor ]

Reverse recovery characteristics (typ.)Vcc=600V, VGE=±15V, Rg=68Ω

Forward current vs. Forward on voltage (typ.)chip

chip

[ Converter ]Forward current vs. Forward on voltage (typ.)

Transient thermal resistance (max.) Temperature characteristic (typ.)

0.1

1

10

100

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

Res

ista

nce

: R

[ kΩ

]

0

10

20

30

40

0 1 2 3 4

Forw

ard

curr

ent

: IF

[ A

]

Forward on voltage : VF [ V ]

Tj=125°C

Tj=25°C

10

100

1000

0 10 20 30

Rev

erse

reco

very

cur

rent

: I

rr [

A ]

Rev

erse

reco

very

tim

e :

trr

[ nse

c ]

Forward current : IF [ A ]

trr (125°C)

trr (25°C)

0.010

0.100

1.000

10.000

0.001 0.010 0.100 1.000

Ther

mal

resi

stan

se :

Rth

(j-c)

[ °C

/W ]

Pulse width : Pw [ sec ]

FWD[Inverter]IGBT[Inverter, Brake]

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0

Forw

ard

curr

ent

: IF

[ A

]

Forward on voltage : VFM [ V ]

Tj=125°C

Tj=25°C

Irr (125°C)Irr (25°C)

Conv. Diode

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15MS6M 0731a13

Vcc=600V， Ic=25A，Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°CCapacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)


Collector current vs. Collector-Emitter voltage (typ.)VGE=15V / chip Tj=25°C / chip

[ Brake ] [ Brake ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

[ Brake ] [ Brake ]

[ Brake ] [ Brake ]


0

10

20

30

40

0 1 2 3 4 5

Col

lect

or c

urre

nt :

Ic [A

]


VGE=20V 15V 12V

10V

8V

0

10

20

30

40

0 1 2 3 4 5

Col

lect

or c

urre

nt :

Ic [A

]


VGE=20V 15V 12V

10V

8V

0

10

20

30

40

0 1 2 3 4 5

Col

lect

or c

urre

nt :

Ic [A

]


Tj=125°C

Tj=25°C

0

2

4

6

8

10

5 10 15 20 25

Col

lect

or -

Emitt

er v

olta

ge :

VC

E [

V ]

Gate - Emitter voltage : VGE [ V ]

Ic=30AIc=15AIc=7.5A

0.1

1.0

10.0

0 10 20 30

Cap

acita

nce

: C

ies,

Coe

s, C

res

[ nF

]


Cies

Coes

Cres

0 30 60 90

Col

lect

or-E

mitt

er v

olta

ge :

VC

E [ 2

00V

/div

]G

ate

- Em

itter

vol

tage

: V

GE

[ 5V

/div

]

Gate charge : Qg [ nC ]

0

VGE

VCE

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15MS6M 0731a

14

Warnings

- This product shall be used within its absolute maximum rating (voltage, current, and temperature).　This productmay be broken in case of using beyond the ratings.製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する

場合があります。

- Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipmentfrom causing secondary destruction, such as fire, its spreading, or explosion.万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず

付けて火災，爆発，延焼等の２次破壊を防いでください。

- Use this product after realizing enough working on environment and considering of product's reliability life.This product may be broken before target life of the system in case of using beyond the product's reliability life.製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命

を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。

a- When electric power is connected to equipments, rush current will be flown through rectifying diode to charge DC capacitor. Guaranteed value of the rush current is specified as I2t (non-repetitive), however frequent rushcurrent through the diode might make it's power cycle destruction occur because of the repetitive power.In application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary.電源投入時に整流用ダイオードには、コンデンサーを充電する為の突入電流が流れます。この突入電流に対する保証値は

I2t(非繰返し)として表記されていますが、この突入電流が頻繁に流れるとI

2t破壊とは別に整流用ダイオードの繰返し負荷に

よるパワーサイクル耐量破壊を起こす可能性があります。突入電流が頻繁に流れるようなアプリケーションでは、突入電流値

を抑えるなど、製品寿命に十分留意してご使用下さい。

- If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,sulfurous acid gas), the product's performance and appearance can not be ensured easily.酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。

a- Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability isclassified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and downof case temperature (Tc), and depends on cooling design of equipment which use this product. In applicationwhich has such frequent rise and down of Tc, well consideration of product life time is necessary.本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる

場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際

の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。

- Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poorcontact problem.主端子及び制御端子に応力を与えて変形させないで下さい。　端子の変形により、接触不良などを引き起こす場合があります。

a- Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convexof cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, toolarge concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity willbe worse and over heat destruction may occur.冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。　過大な凸反り

があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、

本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。

a- In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If thethermal compound amount was not enough or its applying method was not suitable, its spreading will not beenough, then, thermal conductivity will be worse and thermal run away destruction may occur.Confirm spreading state of the thermal compound when its applying to this product.(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、

塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。

コンバウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。

(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)

- It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOAspecification. This product may be broken if the locus is out of the RBSOA.ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊

する可能性があります。

- If excessive static electricity is applied to the control terminals, the devices may be broken. Implement somecountermeasures against static electricity.制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。

- Never add the excessive mechanical stress to the main or control terminals when the product is applied toequipments. The module structure may be broken.素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。

H04-004-03

15MS6M 0731a

15

Warnings

- In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to preventthis malfunction. (Recommended value : -VGE = -15V)逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で

設定して下さい。　（推奨値 : -VGE = -15V)

- In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product inthe most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ

条件（+VGE, -VGE, RG等）でご使用下さい。

- This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage.VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内でご使用下さい。

CautionsCautionsCautionsCautions

- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury ordeath, damage to property like by fire, and other social damage resulted from a failure or malfunction ofthe Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundantdesign, spread-fire-preventive design, and malfunction-protective design.富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保のための手段を講じて下さい。

- The application examples described in this specification only explain typical ones that used the Fuji Electric DeviceTechnology products. This specification never ensure to enforce the industrial property and other rights, nor license theenforcement rights.本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。

- The product described in this specification is not designed nor made for being applied to the equipment orsystems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,atomic control systems and submarine relaying equipment or systems,　please apply after confirmation of this product to be satisfied about system construction and required reliability.本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に満足することをご確認の上、ご利用下さい。

If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.

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