Smart & Quality Memory Module

Smart & Quality Memory Module

SQRAM Product Line Roadmap & Sales Kit

Embedded Core GroupH2, 2011

DRAM Market StatusDRAM Market Status

Worldwide DRAM revenue in 2011 is forecast to decline to US$35.5 billion, down 11.8% from US$40.3 billion in 2010

Samsung shares over 40% DRAM market

Wide Temperature Module MarketWide Temperature Module Market

Brand Chip type Cost Availability Lead Time

SQRAM Samsung (sorting) Low Good 2 weeks

Swissbit Samsung (sorting) Median Good 8 weeks

Other TW venders

Promos Wide temperature chip

Median Bad 2 weeks

Micron Wide temperature chip

High Median 2 weeks

Samsung Memory Chip

Thermal Sensor

30u Golden Finger

10G Anti-Vibration

Developing PlanningAvailable

2011 2012

SO-D

IMM

Lo9n

g-D

IMM

-20 ~ 70°C -20 ~ 85°C -40 ~ 85°C

SQRAM Product RoadmapSQRAM Product Roadmap

SQR-SD3I• SO-DIMM DDR3 RAM

module• Samsung C Die• 1G / 2G / 4G 1333MHz• -40 ~ 85C temperature

SQR-LD3R• Long-DIMM DDR3 RAM

module• Samsung chip• Register support

Q4‘11

SQR-SD3T• SO-DIMM DDR3 RAM

module• Samsung C Die• 1G / 2G / 4G 1333MHz• -40 ~ 85C temperature• Thermal Sensor supportQ4‘11

SQR-SD2I• SO-DIMM DDR2 RAM

module• 128X8 Samsung F Die• 1G / 2G 667MHz• -40 ~ 85C temperature

SQR-LD3E• Long-DIMM DDR3 RAM

module• Samsung chip• ECC support

Q4‘11

SQR-SD2T• SO-DIMM DDR2 RAM

module• 128X8 Samsung F Die• 1G / 2G 667MHz• -40 ~ 85C temperature• Thermal Sensor supportQ4‘11

Moduleware: Thermal Monitor

Functionality: ECC, Register, Thermal Sensor

Chipset: Samsung (Sorting)

Supports Interface: SO-DIMM, LONG-DIMM

DRAM Standard: DDR2 667MHz, DDR3 1333MHz

Temperature: -40C ~ 85C

SQRAM OverviewSQRAM Overview

Longevity: TBD

Module Supplier: Transcend

Regulation: CE, FCC

Industrial Grade Memory ModuleIndustrial Grade Memory Module

Testing Process– Commercial grade tested good modules– Vibration– Sampling test under -40 (ambient) , sampling rate ~10% (MIL-STD-105E)℃– Testing program under +85 (ambient)℃– Chamber -40 ~ +85 (ambient)℃ ℃– Testing Program

VibrationHeater+85C

Chamber-40C

StaticChamber-40~85C

Testing Program

SamplingTesting

RoomTemp.

TestingProgram

Testing Process DescriptionTesting Process Description

The purpose of vibration is to reveal the non-robust module

PASS/Fail will be determined by the next 3 testing step (chamber -40 , heater 85 , room temp. test)℃ ℃

Vibration

Condition• 10~50 Hz• 2 mm amplitude• 10G• 2 min/cycle , total 5cycle

Testing Process DescriptionTesting Process Description

Sampling test– Sample rate: base on MIL-STD-105E, around 10% per 100 pc module– Criterion: all samples should pass the testing

Test program– test coverage: memtest and RST– 32 / 64 bit kernel

Test time: 15 minutes / 1GB module PASS Criterion: No error bit detected

VibrationChamber

-40C

Test Program FunctionTest Program Function

Stuck On test for detecting data bit which always fix high level Stuck Off Test for detecting data bit which always fix low level Random Address Test for random access test Random Data Test for random data write/read verification Address-Line Test for internal address decoder circuit test Walking Bit Test for data line leakage detection One and Zero Data Test for dram hard fail detect test Worse Data Background Test for dram process defect test write

various data ex, 0xaa / 0x55 / 0xcc / 0x33 / 0x99 / 0x66 … Un-cachable Memory Test – Disable the cache of CPU to avoid the

cache interference of memory test

PASS CriterionPASS Criterion

Display Error Chip / Error Counts / Error Address and Error Bit

Testing Process DescriptionTesting Process Description

85℃ Test program

– test coverage: memtest and RST– 32 / 64 bit kernel

Test time: 15 minutes / 1GB module PASS Criterion: No error bit detected

VibrationChamber

-40CHeater+85C

Testing Process DescriptionTesting Process Description

Test time: 235 min / cycle Test cycle: 25 => -40 => 85 => 25℃ ℃ ℃ ℃ Refer to figure1 at page6 PASS/Fail will be determined by the next testing step

(room temp. test)

VibrationChamber

-40CHeater+85C

StaticChamber-40~85C

Static ChamberStatic Chamber

Testing Process DescriptionTesting Process Description

Room temp. Test program (Transcend owned development) Test time : 6 minutes / 1GB module PASS Criterion: No error bit detected

VibrationChamber

-40CHeater+85C

StaticChamber-40~85C

RoomTemp.

SQRAM ModuleWare

Thermal MonitoringThermal Monitoring

SUSI driver/API required Support by Monitoring utility & SUSIAccess Function

– Configuration: Set warning temperature threshold Set warning response (alarm, hibernate, shutdown)

– User Interface Monitor from system tray Event log

Thank You.