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SILICON DIODES SILICON VARISTORS Bulletin No. D01ED0 (Oct., 2000)

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Page 1: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

SI LICON DIODESSILICON VARISTORS

Bulletin No.D01ED0

(Oct., 2000)

Page 2: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies.Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current.Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use.When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility.Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction.Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested.When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications.The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.Anti radioactive ray design is not considered for the products listed herein.This publication shall not be reproduced in whole or in part without prior written approval from Sanken.

CAUTION / WARNING

Page 3: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

1

Contents

22 3 4 5 6 7

8

8

11

12

18

25

35

40

42

44

45

46

48

104

105

Selection Guide Rectifier Diodes Fast-Recovery Rectifier Diodes Ultra-Fast-Recovery Rectifier Diodes Schottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors

Symbols and Terms / trr Measurement Circuit

Taping Specifications

Marking Guide

Rectifier Diodes

Fast-Recovery Rectifier Diodes

Ultra-Fast-Recovery Rectifier Diodes

Schottky Barrier Diodes

Damper Diodes

High-Voltage Rectifier Diodes

Avalanche Diodes

Power Zener Diodes

Silicon Varistors

Characteristic Curves

Application Notes

Product Index by Part Number

Page 4: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

2

Selection GuideRectifier Diodes

1 in one-package

1001.0 45 EM 1Y Axial (E1)

123.0 200 RM 4Y Axial (R4)

0.9 30 SFPM-52Surface Mount (SFP)

45 SFPM-6235 AM01Z Axial (A0)

1.0 45 EM01Z Axial (E0)

20045 EM 1Z Axial (E1)

1350 RM 1Z Axial (R1)

1.2100 RM 2Z

Axial (R2)80 RO 2Z

1.5 120 RM 10Z Axial (R1)

3.0 200 RM 4Z Axial (R4)

0.9 30 SFPM-54Surface Mount (SFP)

45 SFPM-6435 AM01 Axial (A0)

1.0 45 EM01 Axial (E0)

45 EM 1 Axial (E1)

40050 RM 1 Axial (R1)

1480 EM 2 Axial (E1)

1.2150 RM 10 Axial (R1)

100 RM 2Axial (R2)

80 RO 22.5 150 RM 3 Axial (R3)

3.0 200 RM 4 Axial (R4)

35 AM01A Axial (A0)

1.045 EM01A Axial (E0)

45 EM 1A Axial (E1)

50 RM 1A Axial (R1)

80 EM 2A Axial (E1)

600150 RM 10A

Axial (R1) 151.2 100 RM 11A

100 RM 2AAxial (R2)

80 RO 2A2.5 150 RM 3A Axial (R3)

3.0 200 RM 4AAxial (R4)

3.2 350 RM 4AM0.8 40 RM 1B Axial (R1)

1.0 35 EM 1BAxial (E1)

80 EM 2B150 RM 10B

Axial (R1)800 1.2 100 RM 11B 16

100 RM 2BAxial (R2)

80 RO 2B2.5 150 RM 3B Axial (R3)

3.0 150 RM 4B Axial (R4)

0.8 40 RM 1C Axial (R1)

1.0 35 EM 1C Axial (E1)

100 RM 11C Axial (R1)

1000 1.2 100 RM 2CAxial (R2)

17

80 RO 2C2.0 150 RM 3C Axial (R3)

3.0 150 RM 4C Axial (R4)

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

2 in one-package

100 20 120 FMM-31S, R FM80 12

20010 100 FMM-22S, R TO-220F

1320 120 FMM-32S, R FM80

40010 100 FMM-24S, R TO-220F

1420 120 FMM-34S, R FM80

60010 100 FMM-26S, R TO-220F

1520 120 FMM-36S, R FM80

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

Bridge

1004.0 80 RBV-401 RBV-40

126.0 100 RBV-601 RBV-60

4.0 80 RBV-402 RBV-40

200 6.0 120 RBV-602 RBV-60 13

10 80 RBV-4102 RBV-40

4004.0 80 RBV-404 RBV-60

146.0 150 RBV-604 RBV-40

4.0 80 RBV-4064.0 120 RBV-406H RBV-40

4.0 120 RBV-406M6.0 150 RBV-606

600 6.0 140 RBV-606H 15

13 80 RBV-1306RBV-60

15 200 RBV-150615 150 RBV-1506S25 350 RBV-2506

8004.0 100 RBV-408 RBV-40

166.0 170 RBV-608 RBV-60

1000 4.0 100 RBV-40C RBV-40 17

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

Page 5: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

3

Fast-Recovery Rectifier Diodes 1 in one-package

2 in one-package

1.2 25 0.2 0.08 EU 2YX Axial (E1)1.5 30 0.2 0.08 RU 2YX Axial (R1)2.0 50 0.2 0.08 RU 3YX Axial (R2)

1003.5

100 0.4 0.18 RU 30Y Axial (R3) 1870 0.4 0.18 RU 4Y

Axial (R4)4.0 100 0.2 0.08 RU 4YX

10.0 100 0.2 0.08 FMU-G2YXS TO-220F-2Pin 0.25

15 0.4 0.18 EU01Z Axial (E0)15 0.4 0.18 EU 1Z Axial (E1)

0.5 15 0.4 0.18 AU01ZAxial (A0)

20 1.5 0.6 AS01Z

0.630 4.0 1.3 EH 1Z Axial (E1)15 0.4 0.18 RF 1Z

Axial (R1)35 4.0 1.3 RH 1Z

2000.7

30 1.5 0.6 ES 1Z Axial (E1) 1930 1.5 0.6 ES01Z Axial (E0)

0.8 25 0.4 0.18 AU02Z Axial (A0)15 0.4 0.18 EU02Z Axial (E0)

1.0 15 0.4 0.18 EU 2Z Axial (E1)20 0.4 0.18 RU 2Z Axial (R1)

3.580 0.4 0.18 RU 30Z Axial (R3)70 0.4 0.18 RU 4Z Axial (R4)15 0.4 0.18 EU01 Axial (E0)

0.25 15 0.4 0.18 EU 1 Axial (E1)15 0.4 0.18 RU 1 Axial (R1)

0.5 15 0.4 0.18 AU01Axial (A0)

20 1.5 0.6 AS01

0.630 4.0 1.3 EH 1 Axial (E1)15 0.4 0.18 RF 1

Axial (R1)35 4.0 1.3 RH 1

0.730 1.5 0.6 ES01 Axial (E0)

40030 1.5 0.6 ES 1 Axial (E1)

200.8 25 0.4 0.18 AU02 Axial (A0)

1.015 0.4 0.18 EU02 Axial (E0)15 0.4 0.18 EU 2 Axial (E1)

1.1 20 0.4 0.18 RU 2M Axial (R1)

1.520 0.4 0.18 RU 3

Axial (R2)50 0.4 0.18 RU 3M

2.0 200 0.4 0.18 RU 30Axial (R3)

3.0150 0.4 0.18 RU 3150 0.4 0.18 RU 4

Axial (R4)3.5 70 0.4 0.18 RU 4M

15 0.4 0.18 EU01A Axial (E0) 0.25 15 0.4 0.18 EU 1A Axial (E1)

15 0.4 0.18 RU 1A Axial (R1)0.5 15 0.4 0.18 AU01A

Axial (A0)20 1.5 0.6 AS01A

0.630 4.0 1.3 EH 1A Axial (E1)15 0.4 0.18 RF 1A

Axial (R1)35 4.0 1.3 RH 1A30 1.5 0.6 ES01A Axial (E0)

0.7 30 1.5 0.6 ES 1A Axial (E1)30 1.5 0.6 RS 1A Axial (R1)

0.8 25 0.4 0.18 AU02A Axial (A0)600 15 0.4 0.18 EU02A Axial (E0) 21

1.0 15 0.4 0.18 EU 2A Axial (E1)20 0.4 0.18 RU 2

1.1 20 0.4 0.18 RU 2AM Axial (R1)20 0.4 0.18 RU 20A

1.5 20 0.4 0.18 RU 3AAxial (R2)

50 0.4 0.18 RU 3AM2.0 200 0.4 0.18 RU 30A

Axial (R3)3.0

150 0.4 0.18 RU 31A50 0.4 0.18 RU 4A

Axial (R4)3.5 70 0.4 0.18 RU 4AM5.0 30 0.4 0.18 FMU-G16S

TO-220F-2Pin10.0 40 0.4 0.18 FMU-G26S

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

0.25 15 0.4 0.18 RU 1B

0.615 0.4 0.18 RF 1B35 4.0 1.3 RH 1B Axia (R1)

800 0.7 30 1.5 0.6 RS 1B 221.0 20 0.4 0.18 RU 2B1.1 20 0.4 0.18 RU 3B Axial (R2)3.0 50 0.4 0.18 RU 4B Axial (R4)0.2 15 0.4 0.18 RU 1C0.6 35 4.0 1.3 RH 1C Axial (R1)

1000 0.8 20 0.4 0.18 RU 2C 231.5 20 0.4 0.18 RU 3C Axial (R2)2.5 50 0.4 0.18 RU 4C Axial (R4)

1500 0.520 1.5 0.6 ES01F Axial (E0)20 1.5 0.6 ES 1F Axial (E1) 24

2000 0.2 20 4.0 1.3 RC 2 Axial (R1)

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

100 10.0 40 0.4 0.18 FMU-21S, R TO-220F 18 5.0 30 0.4 0.18 FMU-12S, R

TO-220F200 10.0 40 0.4 0.18 FMU-22S, R 19

20.0 80 0.4 0.18 FMU-32S, R FM80 5.0 30 0.4 0.18 FMU-14S, R

TO-220F400 10.0 40 0.4 0.18 FMU-24S, R 20

20.0 80 0.4 0.18 FMU-34S, R FM80 5.0 30 0.4 0.18 FMU-16S, R

TO-220F600 10.0 40 0.4 0.18 FMU-26S, R 21

20.0 80 0.4 0.18 FMU-36S, R FM80

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

trr 1(µs)

trr 2(µs)

trr 1(µs)

trr 2(µs)

trr 1(µs)

trr 2(µs)

trr 1 : IR = IF 90% Recovery Pointtrr 2 : IR = 2• IF 75% Recovery Point

Selection Guide

Page 6: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

4

Ultra-Fast-Recovery Rectifier Diodes 1 in one-package

1.0 25 100 50 AG01Y Axial (A0)

1.130 100 50 EG01Y Axial (E0)

7030 100 50 EG 1Y Axial (E1)

25

1.550 100 50 RG 10Y Axial (R1)

50 100 50 RG 2Y Axial (R2)

3.5 100 100 50 RG 4Y Axial (R4)

0.7 15 100 50 AG01Z Axial (A0)

0.815 100 50 EG01Z Axial (E0)

15 100 50 EG 1Z Axial (E1)

0.9 25 50 35 SFPL-52Surface Mount (SFP)

25 50 35 SFPL-621.0 25 50 35 AL01Z Axial (A0)

25 100 50 EN 01Z Axial (E0)

1.250 100 50 RG 10Z Axial (R1)

50 100 50 RG 2Z Axial (R2)

30 30 25 SFPX-62 Surface Mount (SFP)

1.525 40 30 EL02Z Axial (E0)

20 50 35 EL 1Z Axial (E1)

60 100 50 RN 1ZAxial (R1)

30 50 35 RL 10Z200 2.0 30 50 35 RL 2Z

Axial (R2)26

70 100 50 RN 2Z80 30 25 RX 3Z

Axial (R3)

3.080 100 50 RN 3Z80 100 50 RG 4Z Axial (R4)

50 30 25 SPX-G32S Surface Mount (D Pack)

80 50 35 RL 3Z Axial (R3)

3.5 80 50 35 RL 4ZAxial (R4)

120 100 50 RN 4Z65 40 30 FML-G12S

5.0100 100 50 FMN-G12S65 150 70 FMP-G12S

TO-220F-2Pin65 30 25 FMX-G12S

10.0150 30 25 FMX-G22S150 40 30 FML-G22S

3002.0 30 30 25 SFPX-63 Surface Mount (SFP)

285.0 70 50 35 FML-G13S TO-220F-2Pin

0.7 15 100 50 AG01 Axial (A0)

0.815 100 50 EG01 Axial (E0)

15 100 50 EG 1 Axial (E1)

1.250 100 50 RG 10 Axial (R1)

50 100 50 RG 2 Axial (R2)

4001.5 25 50 35 EL 1 Axial (E1)

292.0 40 50 35 RL 2 Axial (R2)

3.0 80 100 50 RG 4 Axial (R4)

3.5 80 50 35 RL 3 Axial (R3)

70 50 35 FML-G14S5.0 70 100 50 FMN-G14S TO-220F-2Pin

70 30 25 FMX-G14S

0.515 100 50 AG01A Axial (A0)

10 100 50 EG01A Axial (E0)

0.6 10 100 50 EG 1A Axial (E1)

1.050 100 50 RG 10A Axial (R1)

50 100 50 RG 2AAxial (R2)

1.2 30 50 35 RL 2A

600 2.060 50 35 RL 3A Axial (R3)

3050 100 50 RG 4A

Axial (R4)3.0 80 50 35 RL 4A4.0 50 100 50 FMG-G26S

50 50 35 FML-G16STO-220F-2Pin

5.0 50 100 50 FMN-G16S50 30 25 FMX-G16S

8.0 80 100 50 FMG-G36S FM80-2Pin

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

100 65 35 FML-G26S600 10.0 100 50 30 FMD-G26S TO-220F-2Pin 30

100 30 25 FMX-G26S

8003.0 50 70 35 FMC-G28S

TO-220F-2Pin 325.0 60 70 35 FMC-G28SL

0.25 200 80 AP01C Axial (A0)

5 200 80 EP01C Axial (E0)

0.4 10 100 50 RU 1P Axial (R1)

10000.5 10 100 50 EG01C Axial (E0)

330.7 10 100 50 RG 1C Axial (R1)

2.0 60 100 50 RG 4C Axial (R4)

3.0 30 100 50 FMG-G2CS TO-220F-2Pin

5.0 60 150 70 FMG-G3CS FM80-2Pin

2000 0.1 5 200 80 RP 1H Axial (R1) 34

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

2 in one-package

35 30 25 FMX-12S5.0 35 40 30 FML-12S TO-220F

35 100 50 FMG-12S, R6.0 80 30 25 SPX-62S Surface Mount (D Pack)

65 30 25 FMX-22S200 10.0 65 40 30 FML-22S

TO-220F26

65 100 50 FMG-22S, R15.0 100 30 25 FMX-22SL

150 30 25 FMX-32S20.0 150 40 30 FML-32S FM80

150 100 50 FMG-32S,R

5.040 50 35 FML-13S35 100 50 FMG-13S, R70 50 35 FML-23S TO-220F

30010.0 65 100 50 FMG-23S, R

2865 30 25 FMX-23S

100 50 35 FML-33S20.0 150 100 50 FMG-33S, R FM80

100 30 25 FMX-33S

5.040 50 35 FML-14S35 100 50 FMG-14S, R

TO-220F

4008.0 65 100 50 FMG-24S, R

2910.0 70 50 35 FML-24S16.0 100 100 50 FMG-34S, R

FM8020.0 100 50 35 FML-34S3.0 50 70 35 FMC-26U

TO-220F

6006.0 50 100 50 FMG-26S, R

3015.0 80 100 50 FMG-36S, R

FM8020.0 100 65 35 FML-36S

800 3.0 50 70 35 FMC-28U TO-220F 31

1200 3.0 50 70 35 FMC-26UATO-220F-2Pin 34

1600 3.0 50 70 35 FMC-28UA

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

Bridge

2004.0 80 40 30 RBV-402L RBV-40

266.0 100 50 35 RBV-602L RBV-60

VRM

(V)IF(A)

IFSM

(A)Part Number Package Page

trr 1 : IR = IF 90% Recovery Pointtrr 2 : IR = 2• IF 75% Recovery Point

trr 1(ns)

trr 2(ns)

trr 1(ns)

trr 2(ns)

trr 1(ns)

trr 2(ns)

trr 1(ns)

trr 2(ns)

Selection Guide

Page 7: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

5

1 in one-package

0.47 MI1A3Surface Mount (Small)

0.39 MI2A30.36 SFPA-53

Surface Mount (SFP)1.0 0.45 SFPJ-53

0.55 AK 03 Axial (A0)

0.36 EA 03Axial (E0)

0.55 EK 031.5 0.55 EK 13 Axial (E1)

1.7 0.55 RK 13 Axial (R1)

30 0.36 SFPA-63 35

2.00.45 SFPJ-63 Surface Mount (SFP)

0.55 SFPE-630.36 RA 13 Axial (R1)

2.5 0.55 RK 33 Axial (R2)

0.36 SFPA-73Surface Mount (SFP)

3.00.45 SFPJ-730.45 RJ 43

Axial (R4)0.55 RK 43

5.0 0.45 SPJ-G53S Surface Mount (D Pack)

0.5 0.58 SSB-14 Surface Mount (SOT23)

0.55 SFPB-54 Surface Mount (SFP)

1.00.55 AK 04

Axial (A0)0.58 AW 040.55 EK 04 Axial (E0)

1.50.55 SFPB-64 Surface Mount (SFP)

0.55 EK 14 Axial (E1)

1.7 0.55 RK 14 Axial (R1)

402.0

0.50 SFPB-74Surface Mount (SFP)

36

0.60 SFPE-642.5 0.55 RK 34 Axial (R2)

0.55 SPB-G34S Surface Mount (D Pack)

3.0 0.55 RK 44 Axial (R4)

0.55 FMB-G14 TO-220F-2Pin

5.00.55 SPB-G54S Surface Mount (D Pack)

0.55 FMB-G14LTO-220F-2Pin

10.0 0.55 FMB-G24H0.62 SFPB-56 Surface Mount (SFP)

0.7 0.62 AK 06 Axial (R0)

0.62 EK 06 Axial (E0)

1.50.62 EK 16 Axial (E1)

0.62 RK 16 Axial (R1)

60 0.62 SFPB-76Surface Mount (SFP)

38

2.0 0.69 SFPB-660.62 RK 36 Axial (R2)

3.5 0.62 RK 46 Axial (R4)

5.0 0.62 FMB-G16L TO-220F-2Pin

6.0 0.70 SPB-G56S Surface Mount (D Pack)

0.81 SFPB-59 Surface Mount (SFP)

0.7 0.81 AK 09 Axial (A0)

0.81 EK 09 Axial (E0)

0.81 SFPB-69 Surface Mount (SFP)

90 1.5 0.81 EK 19 Axial (E1) 39

0.81 RK 19 Axial (R1)

2.0 0.81 RK 39 Axial (R2)

3.5 0.81 RK 49 Axial (R4)

4.0 0.81 FMB-G19L TO-220F-2Pin

VRM

(V)IO(A)

VF

(A)Part Number Package Page

6.0 0.45 SPJ-63S Surface Mount (D Pack)

3010.0 0.45 FMJ-23L

3520.0 0.45 FMJ-2203 TO-220F

30.0 0.45 FMJ-2303 4.0 0.55 FMB-24 TO-220F

6.0

0.55 SPB-64S Surface Mount (D Pack)

0.55 FMB-24M TO-220F

0.55 FMW-24L10.0 0.55 FMB-24L TO-220F

0.60 FME-24L12.0 0.58 FMB-34S FM80 36

40 0.60 MPE-24H TO-220S

0.55 FMW-24H15.0 0.55 FMB-24H TO-220F

0.60 FME-24H0.55 FMB-34 FM80

20.0 0.55 FMB-2204TO-220F

30.00.55 FMB-23040.55 FMB-34M FM80

4.0 0.62 FMB-26 TO-220F

6.0 0.65 SPB-66S Surface Mount (D Pack)

10.0 0.62 FMB-26L TO-220F

60 15.0 0.62 FMB-36 FM80 38

20.0 0.7 FMB-2206TO-220F

30.00.7 FMB-23060.62 FMB-36M FM80

4.0 0.81 FMB-29TO-220F

8.0 0.81 FMB-29L90 15.0 0.81 FMB-39 FM80

20.00.85 MPE-29G TO-220S 39

0.81 FMB-39M FM80

10020.0 0.85 FME-220A

TO-220F30.0 0.85 FME-230A

VRM

(V)IO(A)

VF

(A)Part Number Package Page

2 in one-package

Schottky Barrier Diodes

60 4.0 0.62 RBV-406B RBV-40 38

VRM

(V)IO(A)

VF

(A)Part Number Package Page

Bridge

Selection Guide

Page 8: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

6

1300 1.0 4.0 1.3 RH 2D Axial (R2)

0.8 4.0 1.3 RH 10F Axial (R1)

1.0 4.0 1.3 RH 2F Axial (R2)

2.0 2.0 0.8 RS 3FSAxial (R3)

For TV1500 4.0 1.3 RH 3F

2.5 4.0 1.3 RH 4FAxial (R4)

1.0 0.4 RS 4FS10.0 2.0 0.8 FMV-G5FS TO-3PF-2Pin

1600 2.5 4.0 1.3 RH 3G Axial (R3)

1800 10.0 1.8 0.7 FMR-G5HS TO-3PF-2Pin

13001.5 0.4 0.18 RU 4D

Axial (R4)2.5 0.4 0.18 RU 4DS

402.0 0.7 0.3 RP 3F Axial (R3)

5.00.7 0.3 FMP-G2FS0.7 0.3 FMQ-G1FS

For CRT Display 15000.5 0.2 FMQ-G2FS

TO-220F-2Pin0.5 0.2 FMQ-G2FMS

10.0 0.6 0.25 FMU-G2FS1.2 0.4 FMQ-G2FLS0.5 0.2 FMQ-G5FMS

1700 10.0 0.5 0.2 FMQ-G5GS TO-3PF-2Pin

1800 8.0 1.0 0.4 FMP-G5HS1300 0.5 0.1 0.05 RG 2A2 Axial (R2)

1600 1.0 0.07 0.035 RC 3B2 Axial (R3)

VRM

(V)IF(A)

Part NumberApplication Package Page

For TV1500/600 5.0 4.0/0.4 1.3/0.18 FMV-3FU

TO-3PF1700/600 5.0 2.0/0.4 0.8/0.18 FMV-3GU

0.7/0.1 0.3/0.05 FMP-3FU TO-3PF

1500/600 5.00.7/0.1 0.3/0.05 FMP-2FUR 41

For CRT Display 2.0/0.15 0.8/0.07 FMQ-2FUR TO-220F

1.0/0.1 — FMT-2FUR1700/800 5.0 0.7/0.07 0.3/0.04 FMQ-3GU TO-3PF

VRM

(V)IF(A)

Part NumberApplication Package Page

Damper Diodes

Damper Diodes for Diode Moduration

2 2 SHV-02 16 0.18 —

For General Purpose 3 2 SHV-03S 16 0.18 —

3 2 SHV-03 16 0.18 —

10 2 SHV-10 40 0.18 —

12 2 SHV-12 45 0.18 —

For General FBT14 2 SHV-14 55 0.18 —

16 2 SHV-16 60 0.18 —

20 2 SHV-20 75 0.18 —

24 2 SHV-24 75 0.18 —

6 2 SHV-06EN 26 0.15 0.2

8 2 SHV-08EN 30 0.15 0.2 Axial 42

10 2 SHV-10EN 38 0.15 0.2

12 2 SHV-12EN 45 0.15 0.2

8 2 SHV-08DN 30 0.15 0.2

10 2 SHV-10DN 38 0.15 0.2

12 2 SHV-12DN 45 0.15 0.2

For General Type Microwave Oven 9 350 HVR-1X-40B 9 — —

For Inverter Type Microwave Oven 8 350 UX-F5B 14 0.15 —

2.5 30 SHV-05JS 5 VZ = 2.6 to 5.0kV

For Automotive Ignition Coil 4 30 SHV-08J 8 VZ = 4.5 to 8.0kV

15 30 SHV-30J 30 VZ = 16.0 to 30.0kV

VRM

(kV)VF max

(V)trr (µs) IF = IRP

Ta = 25ºC Ta = 100ºCIF (AV)

(mA)Part NumberApplication Package Page

High-Voltage Rectifier Diodes

* TV High Voltage Rectifier Capacitive Load, Tc 100°C

*************

trr 1 : IR = IF 90% Recovery Pointtrr 2 : IR = 2• IF 75% Recovery Point

trr 1(µs)

trr 2(µs)

trr 1(µs)

trr 2(µs)

Selection Guide

For CRT Display Compensation

For High Frequency Multi-layer FBT

For Ultra-High Frequency Multi-layer FBT

Page 9: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

7

27 to 33 20 30 RZ1030 34 to 40 28 30 RZ1040 50 to 60 40 30 RZ1055 60 to 70 50 30 RZ1065 Axial (R1)

90 to 110 80 30 RZ1100115 to 135 105 30 RZ1125 44

140 to 160 125 30RZ1150

EZ1050 Axial (E0)

150 to 165 138.7 30 RZ1155165 to 185 150 30 RZ1175 Axial (R1)

185 to 215 180 30 RZ1200

VZ

(V)VRDC

(V)ITSM

(A)Part Number Package Page

Avalanche Diodes with built-in Thyristor

28±3.0 1500 20 65.0 PZ 628 Axial

28±3.0 50 20 2.0 SFPZ-68 Surface Mount (SFP) 45

36±3.6 450 30 11.0 SPZ-G36 Surface Mount (D Pack)

1.5 max 400 15 VR-60SS 2.3±0.25 150 7.5 VR-61SS

Symmetrical type 4 max 150 — SV-2SS Axial (E0) 46

2 max 250 — SV-3SS 1.8±0.2 150 — SV-4SS 1.2±0.2 200 30 SV 02YS 1.8±0.2 150 16 SV 03YS

Unsymmetrical type 2.35±0.25 100 12 SV 04YS Axial (E0) 47

3.0±0.3 80 10 SV 05YS 3.5±0.35 70 8 SV 06YS

VZ

(V)VDC

(V)PR

(W)IZSM

(A)

IF(mA)

VF

(V)IFSM

(A)

Part Number Package Page

Power Zener Diodes

Part NumberDivision Package Page

Silicon Varistors

Selection Guide

Page 10: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

8

Symbols and Terms / trr Measurement Circuit

Taping Specifications

Symbols and Terms

trr (Reverse Recovery Time) Measurement Circuit

Taping Dimensions (mm) Package Dimensions (mm) and Markings QuantityTaping name

The suffix “V” is added to thePart Number

V

Axial taping Reel

The suffix “V1” is added to thePart Number

V1

Axial taping Ammunition (Ammo) pack

VRSM

VRM

VP-P

VR

VF

VB

IF

IF (AV)

IFSM

IRSM

IR

IRP

IR (H)

IZ

IZSM

Ta

Tj

Topr

Tc

Tstg

trr

Ct

Rth ( j- )

Rth ( j-c)

rz

Rz

PF (AV)

I2 t

Peak Reverse Surge Voltage

Peak Reverse Voltage

Reverse Voltage (Peak to Peak)

Reverse Voltage

Foward Voltage

Breakdown Voltage

Foward Current

Average Foward Current

Peak Foward Surge Current

Peak Reverse Surge Current

Reverse Current

Peak Reverse Current

Reverse Current (Hight Temperature)

Avalanche Current

Allowable Avalanche Current

Ambient Temperature

Junction Tmeperature

Operating Ambient Temperature

Case Temperature

Storage Temperature

Reverse Recovery Time

Total Capacitance Between Terminals

Thermal Resistance, Junction to Lead

Thermal Resistance, Junction to Case

Temperature Coefficient of Breakdown Voltage

Equivalent Resistance of Breakdown region

Average Forward Power Dissipation

I2t Limitting Value

20µs

200µs

100µF specimen

100Ω 10

mA

10m

AI F

I RP

0.1

I RP

t rr

20µs

200µs

100µF specimen

10Ω 10

0m

A10

0m

AI F

I RP

0.1

I RP

t rr

20µs

200µs

100µF specimen

500

mA

500

mA

I FI R

P

0.1

I RP

t rr

IF = IRP = 10mA to 1mA IF = IRP = 100mA to 10mA IF = IRP = 500mA to 50mA1 2 2

+0.5–1.0

+5 0

+1 0

+5 0

0.5max 1.0

5.08

+0.

38

0.5max

max

52.0(Blue) (White)

6.06.0 0.5

340

Core Flange

8175

25

83

Part No., Lot No.,Quantity

15

29 75

Fixture

±2

±2

±2±2

±1±1

±2

±0.1

5,000 pcs/reel

2.7 body2.4 body

(4 body)3,000 pcs/reel

0.5max 1.0

5.08

0.5max

52.0 6.06.0 max

0.5(Blue) (White)

+5 0

+1 0

+5 0

+0.5–1.0

+0.

38

Broken lines: perforation

255max 77max

77m

ax

Part No., Lot No., Quantity

2,000 pcs/box(2.7 body)

3,000 pcs/box(2.4 body)

1,000 pcs/box(4 body)

Page 11: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

9

Taping SpecificationsTaping Dimensions (mm)Taping name Package Dimensions (mm) and Markings Quantity

The suffix “WS” is added to thePart Number

The suffix “WK” is added to thePart Number

WK

WS

The suffix “W” is added to thePart Number

W

The suffix “V4” is added to thePart Number

V4

The suffix “V3” is added to thePart Number

V3

The suffix “V0” is added to thePart Number

V0

Radial taping(for A0 series)

Radial taping(for A0 series)

Radial taping

Axial taping

Axial taping

Axial taping Ammunition (Ammo) pack

Reel

Ammunition (Ammo) pack

Ammunition (Ammo) pack

Ammunition (Ammo) pack

2,500 pcs/box

(2.4 body)

1,000 pcs/box(5.2 body)

1,500 pcs/reel(5.2 body)

2,000 pcs/box(2.7 body)

3,000 pcs/box(2.4 body)

4,000 pcs/box

2.7 body0.6 lead only

0.5max 1.0

5.08

0.5max

max

26.0 6.06.0 0.5(Blue) (White)

+5 0

+1 0

+5 0

+0.5–1.0

+0.

38

0.5max 1.0

100.5max

52.0 6.06.0 max

1.0(Blue) (White)

+5 0

+1 0

+5 0

+0.5–1.0

±0.2

0.5max 1.0

10

0.5max

52.0 6.06.0 max

1.0(Blue) (White)

+5 0

+1 0

+5 0

+0.5–1.0

±0.2

4.0

6.35

12.7

2.6max

27.5

16.0

(11.

5)

max4.2

12.7

1.0

max

12.7

3.85 5.0

12.7

3.0

max

12.5

min

9.0

18.0

0

0.7

±0.5

±1.3 ±1.0

±1.0

±0.2±0.5

±0.3

±2.0

±0.7 ±0.2

±1.0

±0.5

±0.5

+1.

0–0

.5

3.85 4.05.0

12.7 0.7

12.5

min11

max

9.0

18.0

012.76.35

1.0

max

18.0

±2.0

±0.2 ±0.2

±0.5

±0.3

±0.7

±1.0±1.3

+0.8–0.2

+1.

0–0

.5

+0.

5–0

0.7

5.0

5.0

2.75

19.8

16.5

11.0

4.0

3.0 12.7 3.85

12.7

0

1.5

22.2

9.0

12.5

min

18.0

30°

±2.0

±0.2

±0.5

±0.3

±1.0

±1.0

±1.0

±0.5

±0.2

±0.3

±0.7

±1.0

+0.8–0

+1.

0–0

.5

+1.

0–0

.5

ANODE

CATHODE

Part No., Lot No., Quantity

150m

ax45

max

340max

Broken lines: perforation

Part No., Lot No., Quantity

ANODE

CATHODE

340max

140m

ax55

max

Broken lines: perforation

77max

TradeMark

Part No., Lot No., Quantity

255max

120m

ax

340

Core Flange

8175

25

83

Part No., Lot No.,Quantity

15

29 75

Fixture

±2

±2

±0.1

±2

±2

±1±1

±2

Broken lines: perforation

Part No., Lot No., Quantity

95m

ax

255max 51max

Page 12: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

10

Taping Specifications for Surface MountTaping Dimensions (mm)Taping name Package Dimensions (mm) and Markings Quantity

Taping Dimensions (mm)Taping name Package Dimensions (mm) and Markings Quantity

The suffix “VR” is added to thePart Number

The suffix “VR” is added to thePart Number

VR

VR

The suffix “VL” is added to the Part Number

VL

Taping Specifications for High-Voltage Diodes

The suffix “VD” is added to thePart Number

VD

The suffix “V1” is added to thePart Number

V1

Axial taping

Axial taping

The suffix “V” is added to the Part Number

V

Emboss taping Reel

(1) The cathode is the right side of the feeding direction.(2) The diodes are put inside the case with the electrode side down.(3) A 150 to 200mm leader tape is provided at the beginning of the tape.(4) 10 or more holes are left empty at the beginning and the end of each tape.(5) Taping of diodes with electrodes facing the direction is also available (taping name: VL)

1.5+0.1–0

2.0±0.1

12.0±0.1 4.9 max

0.4±0.110.8±0.1

21.0

5±0

.1

13.9

±0.1

4.0±0.1

3.0 max

11.5

±0.1

24.0

±0.3

1.75

±0.1

4(6.0)

(2.0

)

(40º)(120º)

±0.5

(R130)

±1100330±2

31 m

ax

25.5

±0.5

2±0.5

2±0.5 13±0.5

R50±1

(R5) (R5)

Feeding direction

13

2.0

21R1.0

178 14 2.0

65

Part No., Lot No.,Quantity

±0.5

±0.5

±0.8

±2 ±1.5 ±0.5

4.5 ±0.2

2.0min1.35±0.4 ±0.41.35

5.1+0.4–0.1

2.6

±0.2

2.05

±0.2

±0.1

±0.1

+0.1–0

4.0 2.0

3.1

2.6

12.0

±0.3 ±0

.05

5.5

1.75

±0.1

4.0

5.5

1.5

Feeding direction

0.05

+0.

1–0

.05

1.1

1.5

±0.2

±0.2

Part No.

Lot No.

QuantitiyTaping name

(type)

MaterialDisk part: CardboardAxial core part: Foaming polystyrole

4(6.0)

(2.0

)

(40°)(120°)

R95 ±1

80±1

330±2

23m

ax

17.5

±0.5

2±0.5

2±0.5 13±1

R40±0.5

±1

Feeding direction

Feeding direction

1.5

2.0±0.1

8.0±0.1 3.4 max

0.3±0.1

6.8±0.1

13.5

±0.1

10.6

±0.1

4.0±0.1

1.6

7.5

±0.1

16.0

±0.3

1.75

±0.1

+0.1–0

+0.1–0

3,000 pcs/reel

1,800 pcs/reel

3,000 pcs/reel

1,000 pcs/reel

5,000 pcs/reel

8,000 pcs/reel

Part No.

QuantityLot No.

29±1.5

75±1.5

340±2

25±1

6±1.0 6±1.0

5±0

.5

58

1.0max

1.2

max

±1

29±1.5

75±1.5

340±2

25±1

Part No.

QuantityLot No.

6±1.0 6±1.0

3.5±0

.5

58

1.0max

1.0

max

±1

LD P

ack

D P

ack

SFP

Page 13: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Part Number (abbreviation)The AM01 is indicated as “M.” ClassZ: 200V None: 400V A: 600VB: 800V C: 1000VManufacturing dateFirst character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D)Cathode band: Continuous bandColor of markings: White (Yellow for AU02 series)

Part Number (abbreviation)EM01, EM2, EM1 are indicated as MO, M2and M1, respectively.ClassZ: 200V None: 400V A: 600VB: 800V C: 1000V F: 1500V But EU02A is indicated as A2 and EU2YX as Y.Manufacturing dateFirst character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D)Manufacturing period First 10 days of month Middle 10 days of month Last 10 days of month

Part NumberFMU-12S is indicated as “FMU12S.”Polarity: Rectifier SymbolLot No.First character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D)Third and fourth chracters: Day

Laser marking or White marking

Part Number: abbreviation SFPB-64 is indicated as “C4”Cathode bandLot No.First character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D)

Part NumberPolarity: Rectifier SymbolLot No.First character: Lot codeSecond character: Year (Last digit of year)Third character: Month (A to M except I)

Part Number: abbreviation SSB-14 is indicated as “A”

Lot No.First character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D)

Part Number: Full namePolarity: Rectifier SymbolLot No.First character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D)Third and fourth chracters: Day

Laser marking or White marking

Part Number: 2 set markingManufacturing date and period: 2 set markingFirst character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D) First 10 days of month Middle 10 days of month Last 10 days of monthCathode band

Color ofmarkings:

White: For Power Supply and SBDYellow: For Medium speedRed: For High-speed and ultra high-speed

Part NumberLot No.First character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D)Third character: A— First 10 days of month B—Middle 10 days of month C—Last 10 days of monthInput/output markingLaser marking or White marking

Axial (A0)

TO-220F Type5

TO-3PF, FM80 Type

Axial (E0, E1)2

Axial (R1, R2, R3, R4)3

RBV4

MO

C

87

Cathode band Color: White

RK44

96

RBV 402

9 9B

FMU12S

8 5 1 2

FML-32S

7 D 0 5

FMG-G3CS

1 9 2 4

C468

M A 9 D

(1-chip type)

11

Part Number: Excluding last characterFML-G12S is indicated as “FML-G12.”Last character of Part NumberPolarity: Rectifier SymbolLot No.First character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D)Third and fourth chracters: Day

Laser marking or White marking

FMLG12

0 1 2 5

S

(1-chip type)

6

Surface Mount (SFP)7

Surface Mount (SOT23)9

Surface Mount (D Pack)8

Surface Mount (LD Pack)10

1

Refer P42 to P43

Refer P46 to P47

High-Voltage Rectifier Diode11

Silicon Varistors12

➀➁➂

➁➂

➀➁➂

Part NumberPolarity: Rectifier SymbolLot No.First character: Year (Last digit of year)Second character: Month (A to M except I)Third character: Week

➀➁➂

➁➂

➁➂

➀➁

➀➁

➀➁➂

A 6 3

➀ ➁

B

A 6 H

64S ➀➁

➁➂

➀ ➁ ➂

➁ ➂

➀➁➂

E

9C1

29G

Marking Guide Note: hight-voltage rectifier diodes shall have different specifications.

Page 14: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

Rth ( j- )Rth ( j-c)(°C/W)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Axial

Center-tap

Bridge

100

1.0

1.7 (3.0)

20

4.0

6.0

EM 1Y

RM 4Y

FMM-31S, R

RBV-401

RBV-601

1.0

3.0

10

2.0

3.0

10

10

10

10

10

17

8

2.0

5.0

3.0

48

50

51

51

52

0.3

1.2

5.5

4.05

6.45

45

200

120

80

120

50

50

100

100

100

100

100

100

100

100

0.97

0.95

1.1

1.05

1.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

12

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

9.015.0

5.0

2.8

3.5

16.520

.020

.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

–0.1+0.2

±0.5

±0.5

S type R type

25

9.5

3.2C3

7.57.5 7.5

134 -1.0

4.6

3.6

15.0

17.5

0.7

±0.1

2.7±0.1 10 7.5 7.5

30

1113

4-1.0

4.63.6

2.7

20.0

17.5

C3

0.7

3.2±0.1

Rectifier Diodes 100V

Fig.No.

Page

whe

re

char

acte

ristic

cu

rve

is s

how

n

Page 15: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

13

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Surface Mount

Axial

Center-tap

Bridge

200

0.9

1.0

1.0

1.0

1.0

1.0

1.5

1.2

1.2

1.7 (3.0)

10

20

4.0

6.0

10

SFPM-52

SFPM-62

AM01Z

EM01Z

EM 1Z

RM 1Z

RM 10Z

RO 2Z

RM 2Z

RM 4Z

FMM-22S, R

FMM-32S, R

RBV-402

RBV-602

RBV-4102

1.0

1.0

1.0

1.0

1.0

1.0

1.5

1.5

1.5

3.0

5.0

10

2.0

3.0

5.0

10

10

10

10

10

5

10

10

10

10

10

10

10

10

10

20

20

22

20

17

15

15

12

12

8

4.0

2.0

5.0

3.0

2.0

48

48

49

50

49

50

50

51

51

52

0.072

0.072

0.13

0.2

0.3

0.4

0.4

0.61

0.6

1.2

2.1

5.5

4.05

6.45

4.05

30

45

35

45

45

50

120

80

100

200

100

120

80

120

80

50

50

50

50

50

50

50

50

50

50

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

150 (Tj)

1.0

0.98

0.98

0.97

0.97

0.95

0.91

0.92

0.91

0.95

1.1

1.1

1.05

1.0

1.1

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

S type R type

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

9.015.0

5.0

2.8

3.5

16.520

.020

.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

–0.1+0.2

±0.5

±0.5

S type R type

25

9.5

3.2C3

7.57.5 7.5

134 -1.0

4.6

3.6

15.0

17.5

0.7

±0.1

2.7±0.1 10 7.5 7.5

30

1113

4-1.0

4.63.6

2.7

20.0

17.5

C3

0.7

3.2±0.1

4.5±0.2

2.6±0

.22.

05±0

.2

0.05

1.35±0.4 1.35±0.4 1.1±0.2

1.5±0.25.1

2.0min

+0.4–0.1

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

Rth ( j- )Rth ( j-c)(°C/W)

Rectifier Diodes 200V

Fig.No.

Page

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Page 16: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

14

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Surface Mount

Axial

Center-tap

Bridge

400

0.9

1.0

1.0

1.0

1.0

1.0

1.2

1.2

1.2

1.2

2.5

1.7 (3.0)

10

20

4.0

6.0

SFPM-54

SFPM-64

AM01

EM01

EM 1

RM 1

EM 2

RM 10

RM 2

RO 2

RM 3

RM 4

FMM-24S, R

FMM-34S, R

RBV-404

RBV-604

1.0

1.0

1.0

1.0

1.0

1.0

1.2

1.5

1.5

1.5

2.5

3.0

5.0

10

2.0

3.0

10

10

10

10

10

5

10

10

10

10

10

10

10

10

10

10

20

20

22

20

17

15

17

15

12

12

10

8

4.0

2.0

5.0

3.0

48

48

49

50

50

51

51

0.072

0.072

0.13

0.2

0.3

0.4

0.3

0.4

0.6

0.61

1.0

1.2

2.1

5.5

4.05

6.45

30

45

35

45

45

50

80

150

100

80

150

200

100

120

80

120

50

50

50

50

50

50

50

50

50

50

100

50

100

100

100

100

100

100

100

100

100

100

100

100

100

100

150

100

100

100

100

100

1.0

0.98

0.98

0.97

0.97

0.95

0.92

0.91

0.91

0.92

0.95

0.95

1.1

1.1

1.1

1.05

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

9.015.0

5.0

2.8

3.5

16.520

.020

.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

–0.1+0.2

±0.5

±0.5

S type R type

25

9.5

3.2C3

7.57.5 7.5

134 -1.0

4.6

3.6

15.0

17.5

0.7

± 0.1

2.7± 0.1 10 7.5 7.5

30

1113

4-1.0

4.63.6

2.7

20.0

17.5

C3

0.7

3.2±0.1

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

4.5±0.2

2.6±0

.22.

05±0

.2

0.05

1.35±0.4 1.35±0.4 1.1±0.2

1.5±0.25.1

2.0min

+0.4–0.1

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

S type R type

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

Rth ( j- )Rth ( j-c)(°C/W)

Rectifier Diodes 400V

Fig.No.

Page

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Page 17: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

15

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Axial

Center-tap

Bridge

600

1.0

1.0

1.0

1.0

1.2

1.2

1.2

1.2

1.2

2.5

1.7 (3.0)

1.8 (3.2)

10

20

4.0

4.0

4.0

6.0

6.0

13

15

15

25

AM01AEM01AEM 1ARM 1AEM 2ARM 11ARM 10ARM 2ARO 2ARM 3ARM 4ARM 4AMFMM-26S, RFMM-36S, RRBV-406RBV-406HRBV-406MRBV-606RBV-606HRBV-1306RBV-1506SRBV-1506RBV-2506

1.0

1.0

1.0

1.0

1.2

1.5

1.5

1.5

1.5

2.5

3.0

3.5

5.0

10

2.0

2.0

2.0

3.0

3.0

6.5

7.5

7.5

12.5

10

10

10

5

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

50

50

22

20

17

15

17

15

15

12

12

10

8

8

4.0

2.0

5.0

5.0

5.0

3.0

3.0

1.5

1.5

1.5

1.5

48

49

50

50

51

51

52

51

52

53

0.13

0.2

0.3

0.4

0.3

0.4

0.4

0.6

0.61

1.0

1.2

1.2

2.1

5.5

4.05

4.05

4.05

6.45

6.45

6.45

6.45

6.45

6.45

35

45

45

50

80

100

150

100

80

150

200

350

100

120

80

120

120

120

140

80

150

200

350

50

50

50

50

50

50

50

50

50

100

50

50

100

100

100

100

100

100

200

100

200

200

200

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

0.98

0.97

0.97

0.95

0.92

0.92

0.91

0.91

0.92

0.95

0.95

0.92

1.1

1.1

1.1

0.92

1.0

1.05

1.05

1.2

1.1

1.05

1.05

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

9.015.0

5.0

2.8

3.5

16.520

.020

.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

–0.1+0.2

±0.5

±0.5

S type R type

25

9.5

3.2C3

7.57.5 7.5

134 -1.0

4.6

3.6

15.0

17.5

0.7

±0.1

2.7±0.1 10 7.5 7.5

30

1113

4-1.0

4.63.6

2.7

20.0

17.5

C3

0.7

3.2±0.1

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

S type R type

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

Rth ( j- )Rth ( j-c)(°C/W)

Rectifier Diodes 600V

Fig.No.

Page

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Page 18: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

16

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Axial

Bridge

800

0.8

1.0

1.2

1.2

1.2

1.2

1.2

2.5

1.7 (3.0)

4.0

6.0

RM 1B

EM 1B

EM 2B

RM 11B

RM 10B

RM 2B

RO 2B

RM 3B

RM 4B

RBV-408

RBV-608

1.0

1.0

1.2

1.5

1.5

1.5

1.5

2.5

3.0

2.0

3.0

5

20

10

10

10

10

10

10

10

10

10

15

17

17

15

15

12

12

10

8

5.0

3.0

49

48

49

50

51

52

0.4

0.3

0.3

0.4

0.4

0.6

0.61

1.0

1.2

4.05

6.45

40

35

80

100

150

100

80

150

150

100

170

50

100

50

50

50

50

50

100

50

50

100

100

100

100

100

100

100

100

150

100

100

100

1.2

0.97

0.92

0.92

0.91

0.91

0.92

0.95

0.95

1.0

0.95

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

25

9.5

3.2C3

7.57.5 7.5

134 -1.0

4.6

3.6

15.0

17.5

0.7

±0.1

2.7±0.1 10 7.5 7.5

30

1113

4-1.0

4.63.6

2.7

20.0

17.5

C3

0.7

3.2±0.1

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

Rth ( j- )Rth ( j-c)(°C/W)

Rectifier Diodes 800V

Fig.No.

Page

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Page 19: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

17

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Axial

Bridge

1000

0.8

1.0

1.2

1.2

1.2

2.0

1.7 (3.0)

4.0

RM 1C

EM 1C

RM 11C

RM 2C

RO 2C

RM 3C

RM 4C

RBV-40C

1.0

1.0

1.5

1.5

1.5

2.5

3.0

2.0

5

20

10

10

10

10

10

10

15

17

15

12

12

10

8

5.0

49

48

49

50

51

0.4

0.3

0.4

0.6

0.61

1.0

1.2

4.05

40

35

100

100

80

150

150

100

50

100

50

50

50

100

50

50

100

100

100

100

100

150

100

100

1.2

0.97

0.92

0.91

0.92

0.95

0.95

1.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

25

9.5

3.2C3

7.57.5 7.5

134 -1.0

4.6

3.6

15.0

17.5

0.7

±0.1

2.7±0.1

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

Rth ( j- )Rth ( j-c)(°C/W)

Rectifier Diodes 1000V

Fig.No.

Page

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Page 20: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

18

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Axial

Frame-2Pin

Center-tap

100

1.2

1.5

2.0

1.5 (3.5)

2.0 (3.5)

2.2 (4.0)

10

10

EU 2YX

RU 2YX

RU 3YX

RU 30Y

RU 4Y

RU 4YX

FMU-G2YXS

FMU-21S, R

1.2

1.5

2.0

3.5

3.5

3.5

10

5.0

10

10

10

10

10

10

50

50

17

15

12

10

8

8

4.2

4.0

56

57

58

59

60

60

0.3

0.4

0.6

1.0

1.2

1.2

2.1

2.1

25

30

50

80

70

70

100

40

300

300

300

300

300

300

500

500

100

100

100

100

100

100

100

100

0.2

0.2

0.2

0.4

0.4

0.4

0.2

0.4

0.08

0.08

0.08

0.18

0.18

0.18

0.08

0.18

10/10

10/10

10/10

10/10

10/10

100/100

100/100

100/100

IF/ IFP(mA)

10/20

10/20

10/20

10/20

10/20

100/200

100/200

100/200

0.9

0.95

0.95

0.97

1.3

1.3

1.0

1.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

S type R type

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

Rth (j- )Rth (j-c)(°C/W)

Fast-Recovery Rectifier Diodes 100Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (µs)

1 trr (µs)

2Fig.No.

Page

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Page 21: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

19

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Axial

Center-tap

200

0.25

0.25

0.5

0.6

0.6

0.6

0.6

0.7

0.7

0.8

1.0

1.0

1.0

1.5 (3.5)

2.0 (3.5)

5.0

10

20

EU01Z

EU 1Z

AU01Z

AS01Z

EH 1Z

RF 1Z

RH 1Z

ES01Z

ES 1Z

AU02Z

EU02Z

EU 2Z

RU 2Z

RU 30Z

RU 4Z

FMU-12S, R

FMU-22S, R

FMU-32S, R

0.25

0.25

0.5

0.6

0.6

0.6

0.6

0.8

0.8

0.8

1.0

1.0

1.0

3.5

3.5

2.5

5.0

10

10

10

10

10

10

10

5

10

10

10

10

10

10

10

10

50

50

50

20

17

22

22

17

15

15

20

17

22

20

17

15

10

8

4.0

4.0

2.0

54

55

54

55

56

54

55

54

55

57

58

59

60

61

0.2

0.3

0.13

0.13

0.3

0.4

0.4

0.2

0.3

0.13

0.2

0.3

0.4

1.0

1.2

2.1

2.1

5.5

15

15

15

20

30

15

35

30

30

25

15

15

20

80

70

30

40

80

150

150

150

50

200

200

70

200

200

250

300

300

300

300

300

500

500

500

100

100

100

100

150

100

150

100

100

100

100

100

100

100

100

100

100

100

0.4

0.4

0.4

1.5

4

0.4

4

1.5

1.5

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.18

0.18

0.18

0.6

1.3

0.18

1.3

0.6

0.6

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

100/100

100/100

100/100

IF/ IFP(mA)

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

100/200

100/200

100/200

2.5

2.5

1.7

1.5

1.35

2.0

1.3

2.5

2.5

1.3

1.4

1.4

1.5

0.97

1.3

1.5

1.5

1.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

S type R type

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

9.015.0

5.0

2.8

3.5

16.520

.020

.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

–0.1+0.2

±0.5

±0.5

S type R type

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

Rth ( j- )Rth (j-c)(°C/W)

Fast-Recovery Rectifier Diodes 200Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (µs)

1 trr (µs)

2Fig.No.

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Page 22: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

20

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Axial

Center-tap

400

0.25

0.25

0.25

0.5

0.6

0.6

0.6

0.6

0.7

0.7

0.8

1.0

1.0

1.1

1.5

1.5

2.0

3.0

1.5 (3.0)

2.0 (3.5)

5.0

10

20

EU01

EU 1

RU 1

AU01

AS01

EH 1

RF 1

RH 1

ES 1

ES01

AU02

EU02

EU 2

RU 2M

RU 3

RU 3M

RU 30

RU 31

RU 4

RU 4M

FMU-14S, R

FMU-24S, R

FMU-34S, R

0.25

0.25

0.25

0.5

0.6

0.6

0.6

0.6

0.8

0.8

0.8

1.0

1.0

1.1

1.5

1.5

2.0

3.0

3.0

3.5

2.5

5.0

10

10

10

10

10

10

10

10

5

10

10

10

10

10

10

10

10

10

50

10

10

50

50

50

20

17

15

22

22

17

15

15

20

20

22

20

17

15

12

12

10

10

8

8

4.0

4.0

2.0

54

55

57

54

55

56

55

54

55

57

58

59

60

61

0.2

0.3

0.4

0.13

0.13

0.3

0.4

0.4

0.2

0.2

0.13

0.2

0.3

0.4

0.6

0.6

1.0

1.0

1.2

1.2

2.1

2.1

5.5

15

15

15

15

20

30

15

35

30

30

25

15

15

20

20

50

200

150

50

70

30

40

80

150

150

200

150

50

200

200

70

200

200

250

300

300

300

400

350

300

500

300

300

500

500

500

100

100

100

100

100

150

100

150

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

0.4

0.4

0.4

0.4

1.5

4

0.4

4

1.5

1.5

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.18

0.18

0.18

0.18

0.6

1.3

0.18

1.3

0.6

0.6

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

100/100

100/100

10/10

100/100

100/100

100/100

100/100

IF/ IFP(mA)

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

100/200

100/200

10/20

100/200

100/200

100/200

100/200

2.5

2.5

2.5

1.7

1.5

1.35

2.0

1.3

2.5

2.5

1.3

1.4

1.4

1.2

1.5

1.1

0.95

1.2

1.5

1.3

1.5

1.5

1.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

9.015.0

5.0

2.8

3.5

16.520

.020

.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

–0.1+0.2

±0.5

±0.5

S type R type

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

S type R type

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

Rth (j- )Rth (j-c)(°C/W)

Fast-Recovery Rectifier Diodes 400Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (µs)

1 trr (µs)

2Fig.No.

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Page 23: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

21

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Axial

Frame-2Pin

Center-tap

600

0.25

0.25

0.25

0.5

0.6

0.6

0.6

0.6

0.7

0.7

0.7

0.8

1.0

1.0

1.0

1.1

1.5

1.5

1.5

2.0

3.0

1.5 (3.0)

2.0 (3.5)

5.0

10

5.0

10

20

EU01A

EU 1A

RU 1A

AU01A

AS01A

EH 1A

RF 1A

RH 1A

ES 1A

ES01A

RS 1A

AU02A

EU02A

EU 2A

RU 2

RU 2AM

RU 20A

RU 3A

RU 3AM

RU 30A

RU 31A

RU 4A

RU 4AM

FMU-G16S

FMU-G26S

FMU-16S, R

FMU-26S, R

FMU-36S, R

0.25

0.25

0.25

0.5

0.6

0.6

0.6

0.6

0.8

0.8

0.8

0.8

1.0

1.0

1.0

1.1

1.5

1.5

1.5

2.0

3.0

3.0

3.5

5.0

10

2.5

5.0

10

10

10

10

10

10

10

10

5

10

10

10

10

10

10

10

10

10

10

10

10

50

10

10

50

50

50

50

50

20

17

15

22

22

17

15

15

20

20

20

22

20

17

15

15

15

12

12

10

10

8

8

4.0

4.0

4.0

4.0

2.0

54

55

57

54

55

56

55

54

56

54

55

57

58

59

60

60

61

0.2

0.3

0.4

0.13

0.13

0.3

0.4

0.4

0.2

0.2

0.4

0.13

0.2

0.3

0.4

0.4

0.4

0.6

0.6

1.0

1.0

1.2

1.2

2.1

2.1

2.1

2.1

5.5

15

15

15

15

20

30

15

35

30

30

30

25

15

15

20

20

50

20

50

200

150

50

70

30

40

30

40

80

150

150

200

150

50

200

200

70

200

200

200

250

300

300

300

300

350

400

350

300

500

300

300

500

500

500

500

500

100

100

100

100

100

150

100

150

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

0.4

0.4

0.4

0.4

1.5

4

0.4

4

1.5

1.5

1.5

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.4

0.18

0.18

0.18

0.18

0.6

1.3

0.18

1.3

0.6

0.6

0.6

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

100/100

100/100

10/10

100/100

100/100

100/100

100/100

100/100

100/100

IF/ IFP(mA)

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

10/20

100/200

100/200

10/20

100/200

100/200

100/200

100/200

100/200

100/200

2.5

2.5

2.5

1.7

1.5

1.35

2.0

1.3

2.5

2.5

2.5

1.3

1.4

1.4

1.5

1.2

1.1

1.5

1.1

0.95

1.2

1.5

1.3

1.25

1.35

1.5

1.5

1.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

9.015.0

5.0

2.8

3.5

16.520

.020

.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

–0.1+0.2

±0.5

±0.5

S type R type

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

S type R type

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

Rth (j- )Rth (j-c)(°C/W)

Fast-Recovery Rectifier Diodes 600Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (µs)

1 trr (µs)

2Fig.No.

Page

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Page 24: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

22

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Rth (j- )(°C/W)

Axial800

0.25

0.6

0.6

0.7

1.0

1.1

1.5 (3.0)

RU 1B

RF 1B

RH 1B

RS 1B

RU 2B

RU 3B

RU 4B

0.25

0.6

0.6

0.8

1.0

1.0

3.0

10

10

5

10

10

10

10

15

15

15

20

15

12

8

57

56

57

58

59

0.4

0.4

0.4

0.4

0.4

0.6

1.2

15

15

35

30

20

20

50

200

200

70

200

300

400

500

100

100

150

100

100

100

100

0.4

0.4

4

1.5

0.4

0.4

0.4

0.18

0.18

1.3

0.6

0.18

0.18

0.18

10/10

10/10

10/10

10/10

10/10

10/10

10/10

IF/ IFP(mA)

10/20

10/20

10/20

10/20

10/20

10/20

10/20

2.5

2.0

1.3

2.5

1.5

1.5

1.6

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

Fast-Recovery Rectifier Diodes 800Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (µs)

1 trr (µs)

2Fig.No.

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Page 25: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

23

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Rth (j- )(°C/W)

Axial1000

0.2

0.6

0.8

1.5

1.5 (2.5)

RU 1C

RH 1C

RU 2C

RU 3C

RU 4C

0.25

0.6

1.0

1.5

3.0

10

5

10

10

50

15

15

15

12

8

57

56

57

58

59

0.4

0.4

0.4

0.6

1.2

15

35

20

20

50

200

70

300

400

500

100

150

100

100

100

0.4

4

0.4

0.4

0.4

0.18

1.3

0.18

0.18

0.18

10/10

10/10

10/10

10/10

100/100

IF/ IFP(mA)

10/20

10/20

10/20

10/20

100/200

3.0

1.3

1.5

2.5

1.6

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

62.5

±0.7

7.2

±0.2

Cathode Mark

4.0±0.2

0.78±0.05

Fast-Recovery Rectifier Diodes 1000Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (µs)

1 trr (µs)

2Fig.No.

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Page 26: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

24

Package Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Rth (j- )(°C/W)

Axial

Axial

Frame-2Pin

Axial

Frame-2Pin

Frame-2Pin

Axial

1300

1500

1600

1700

1800

2000

1.0

1.2 (1.5)

1.5 (2.5)

0.5

0.5

0.8

1.0

2.0

2.0

2.5

2.5

1.5 (2.5)

5.0

5.0

10

10

10

10

10

10

2.5

10

8.0

10

0.2

RH 2D

RU 4D

RU 4DS

ES01F

ES 1F

RH 10F

RH 2F

RS 3FS

RP 3F

RH 3F

RH 4F

RS 4FS

FMP-G2FS

FMQ-G1FS

FMQ-G2FS

FMU-G2FS

FMQ-G2FLS

FMQ-G2FMS

FMQ-G5FMS

FMV-G5FS

RH 3G

FMQ-G5GS

FMP-G5HS

FMR-G5HS

RC 2

1.0

1.5

3.0

0.5

0.5

1.0

1.0

3.0

2.0

2.5

2.5

3.0

5.0

5.0

10

10

10

10

10

10

2.5

10

8

10

0.2

10

50

50

10

10

10

10

50

50

50

10

50

50

50

50

50

50

50

50

50

50

100

25

20

10

12

8

8

20

17

15

12

10

10

10

8

8

4.0

4.0

4.0

4.0

4.0

4.0

2

2

10

2

2

2

15

93

94

54

55

93

94

95

96

95

96

97

93

96

96

56

0.6

1.2

1.2

0.2

0.3

0.4

0.6

1.0

1.0

1.0

1.2

1.2

2.1

2.1

2.1

2.1

2.1

2.1

6.5

6.5

1.0

6.5

6.5

6.5

0.4

60

50

50

20

20

60

60

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

20

500

500

500

200

200

500

500

500

500

500

350

500

500

500

500

6000

500

500

500

700

500

500

250

200

300

100

100

100

100

100

100

100

100

100

100

100

100

100

150

150 (Tj)

150 (Tj)

150 (Tj)

150

100

100

100

100

100

100

100

4

0.4

0.4

1.5

1.5

4

4

2

0.7

4

4

1

0.7

0.7

0.5

0.6

1.2

0.5

0.5

2.0

4

0.5

1.0

1.8

4.0

1.3

0.18

0.18

0.6

0.6

1.3

1.3

0.8

0.3

1.3

1.3

0.4

0.3

0.3

0.2

0.25

0.4

0.25

0.2

0.8

1.3

0.2

0.4

0.7

1.3

10/10

500/500

500/500

10/10

10/10

10/10

10/10

100/100

500/500

100/100

100/100

100/100

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

100/100

500/500

500/500

500/500

10/10

IF/ IFP(mA)

100/200

500/1000

500/1000

10/20

10/20

100/200

100/200

100/200

500/1000

100/200

100/200

100/200

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

100/200

500/1000

500/1000

500/1000

10/20

1.0

1.8

1.8

2.0

2.0

1.0

1.0

1.1

1.7

1.3

1.5

1.5

2.0

5.0

2.8

1.6

1.8

2.4

2.4

1.5

1.3

2.7

2.0

1.6

2.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

Fast-Recovery Rectifier Diodes 1300V and over

23.0

3.0

5.5±0.2

3.45±0.2

0.8

3.35

0.65

3.315.6±0.2

1.6

3.3

16.2

5.5

9.5

1.75±1.75

1.05

5.455.45

+0.2–0.1

+0.2–0.1

t rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (µs)

1 trr (µs)

2Fig.No.

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Page 27: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Rth (j- )(°C/W)

Axial70

1.0

1.0

1.1

1.5

1.5

2.0 (3.5)

AG01Y

EG01Y

EG 1Y

RG 10Y

RG 2Y

RG 4Y

1.0

1.0

1.1

1.5

1.5

3.5

100

100

100

500

500

1000

22

20

17

15

12

8

63

64

65

66

69

0.13

0.2

0.3

0.4

0.6

1.2

25

30

30

50

50

100

0.5

0.5

0.5

2.5

2.5

5

100

100

100

100

100

100

100

100

100

100

100

100

50

50

50

50

50

50

100/100

100/100

100/100

100/100

100/100

100/100

IF/ IFP(mA)

100/200

100/200

100/200

100/200

100/200

100/200

1.2

1.2

1.2

1.1

1.1

1.3

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

25

Ultra-Fast-Recovery Rectifier Diodes 70Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (ns)

1 trr (ns)

2Fig.No.

Page

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Page 28: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

26

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Surface Mount

Axial

Frame-2Pin

Center-tap

Bridge

200

0.9

1.0

1.5

3.0

6.0

0.7

0.7

0.8

1.0

1.0

1.2

1.2

1.5

1.5

1.5

2.0

2.0

2.0

3.0

3.0

1.0 (3.0)

3.5

3.5

3.5

5.0

5.0

5.0

5.0

10.0

10.0

5.0

5.0

5.0

10.0

10.0

10.0

15.0

20.0

20.0

20.0

4.0

6.0

SFPL-52

SFPL-62

SFPX-62

SPX-G32S

SPX-62S

AG01Z

EG01Z

EG 1Z

AL01Z

EN01Z

RG 10Z

RG 2Z

EL02Z

EL 1Z

RN 1Z

RL 10Z

RL 2Z

RN 2Z

RN 3Z

RX 3Z

RG 4Z

RL 3Z

RL 4Z

RN 4Z

FML-G12S

FMN-G12S

FMP-G12S

FMX-G12S

FML-G22S

FMX-G22S

FMG-12S, R

FML-12S

FMX-12S

FMG-22S, R

FML-22S

FMX-22S

FMX-22SL

FMG-32S, R

FML-32S

FMX-32S

RBV-402L

RBV-602L

1.0

1.0

1.5

3.0

3.0

0.7

0.7

0.8

1.0

1.0

1.2

1.5

1.5

1.5

1.5

2.0

2.0

2.0

3.0

3.0

3.0

3.5

3.5

3.5

5.0

5.0

5.0

5.0

10.0

10.0

2.5

2.5

2.5

5.0

5.0

5.0

7.5

10.0

10.0

10.0

2.0

3.0

10

10

10

50

50

100

50

50

100

10

500

500

50

100

20

50

100

50

50

50

1000

50

150

50

250

100

50

100

500

200

500

150

50

500

250

100

150

1000

600

200

50

250

20

20

20

5.0

5.0

22

20

17

22

20

15

12

20

17

15

15

12

12

10

10

8

10

8

8

4.0

4.0

4.0

4.0

4.0

4.0

4.0

4.0

4.0

4.0

4.0

4.0

4.0

2.0

2.0

2.0

5.0

3.0

62

63

63

64

63

64

65

67

64

65

66

67

68

69

68

70

71

72

73

74

76

74

75

76

77

78

0.072

0.072

0.072

0.41

0.41

0.13

0.2

0.3

0.13

0.2

0.4

0.6

0.2

0.3

0.4

0.4

0.6

0.6

1.0

1.0

1.2

1.0

1.2

1.2

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

5.5

5.5

5.5

4.05

6.45

25

25

30

50

80

15

15

15

25

50

50

50

25

20

60

30

30

70

80

80

80

80

80

120

65

100

65

65

150

150

35

35

35

65

65

65

100

150

150

150

80

100

1

1

2

10

10

0.5

0.3

0.3

0.5

2

2.5

2.5

0.1

0.5

3

0.1

0.5

4

6

10

5

0.2

0.5

6

1

10

0.5

20

2

50

1.5

0.5

10

1.5

1

20

30

5

2

50

0.1

1

150 (Tj)

150 (Tj)

150 (Tj)

100

100

100

100

100

100

150 (Tj)

100

100

100

100

150 (Tj)

100

100

150 (Tj)

150 (Tj)

100

100

100

100

150 (Tj)

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

50

50

30

30

30

100

100

100

50

100

100

100

40

100

100

50

50

100

100

30

100

50

50

100

40

100

150

30

40

30

100

40

30

100

40

30

30

100

40

30

40

50

35

35

25

25

25

50

50

50

35

50

50

50

30

50

50

35

35

50

50

25

35

35

50

50

30

50

70

25

30

25

50

30

25

50

30

25

25

50

30

25

30

35

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

500/500

500/500

100/100

100/100

100/100

100/100

100/100

100/100

500/500

100/100

100/100

500/500

100/100

100/100

IF/ IFP(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

500/1000

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

100/200

100/200

500/1000

100/200

100/200

0.98

0.98

0.98

0.98

0.98

1.8

1.9

1.7

0.98

0.92

1.5

1.5

0.98

0.98

0.92

0.98

0.98

0.92

0.92

0.98

1.7

0.95

0.95

0.92

0.98

0.92

1.15

0.98

0.98

0.98

1.8

0.98

0.98

1.8

0.98

0.98

0.98

1.8

0.98

0.98

0.98

1.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

Rth (j- )Rth (j-c)(°C/W)

Ultra-Fast-Recovery Rectifier Diodes 200Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (ns)

1 trr (ns)

2Fig.No.

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Page 29: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ultra-Fast-Recovery Rectifier Diodes 200V

4.5±0.2

0.05

2.0min1.35±0.4 1.35±0.4

5.1

2.6±0

.22.

05±0

.2

1.1±0.2

1.5±0.2

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3 9.015.0

5.0

2.8

3.5

16.5

±0.5

20.0

±0.5

20.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

+0.2–0.1

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

25

9.5

3.2C3

7.57.5 7.5

134 -1.0

4.6

3.6

15.0

17.5

0.7

±0.1

2.7±0.1

27

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

10 7.5 7.5

30

1113

4-1.0

4.63.6

2.7

20.0

17.5

C3

0.7

3.2±0.1

S type R type S type R type

+0.4–0.1

6.5±0.4 2.3±0.4 5.4

4.9

4.15.4±0.4

1.7

±0.5

5.5

±0.4

2.5

±0.4

0.8±0.1 0.8

1.5max

±0.1

0.55±0.1

0.55±0.1

1.15

1 2 3

±0.1

1.2m

ax

2.29±0.52.29±0.5

0 to 0.25

0.5

±0.2

2.9

0.16

1.37

5.0

0.7

Part NumberPolarityLot No.

1 3 2 (Common to backside of case)

N.C1 Chip AnodeCathode

AnodeCenter-tap AnodeCathode (Common)

12

3

123

Page 30: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

28

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Center-tap

Surface Mount

Frame-2Pin

300

2.0

5.0

5.0

5.0

10.0

10.0

10.0

20.0

20.0

20.0

SFPX-63

FML-G13S

FMG-13S, R

FML-13S

FMG-23S, R

FML-23S

FMX-23S

FMG-33S, R

FML-33S

FMX-33S

2

5.0

2.5

2.5

5.0

5.0

5.0

10.0

10.0

10.0

50

100

500

50

500

100

50

1000

200

100

20

4.0

4.0

4.0

4.0

4.0

4.0

2.0

2.0

2.0

71

73

75

74

75

76

77

0.07

2.1

2.1

2.1

2.1

2.1

2.1

5.5

5.5

5.5

20

70

35

40

65

70

65

150

100

100

3

0.2

1.5

0.1

1.5

0.5

15

5

1

30

150

100

100

100

100

100

150

100

100

150

30

50

100

50

100

50

30

100

50

30

25

35

50

35

50

35

25

50

35

25

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

500/500

500/500

IF/ IFP(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

500/1000

1.3

1.3

1.8

1.3

1.8

1.3

1.3

1.8

1.3

1.3

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

Rth (j- )Rth (j-c)(°C/W)

Ultra-Fast-Recovery Rectifier Diodes 300V

S type R type

9.015.0

5.0

2.8

3.5

16.5

±0.5

20.0

±0.5

20.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

+0.2–0.1

S type R type

4.5±0.2

0.05

2.0min1.35±0.4 1.35±0.4

5.1

2.6±0

.22.

05±0

.2

1.1±0.2

1.5±0.2

t rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (ns)

1 trr (ns)

2Fig.No.

Page

whe

re

char

acte

rist

ic

curv

e is

sho

wn

+0.4–0.1

Page 31: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

9.015.0

5.0

2.8

3.5

16.5

±0.5

20.0

±0.5

20.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

+0.2–0.1

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Frame-2Pin

Center-tap

Axial

400

0.7

0.7

0.8

1.2

1.2

1.5

2.0

3.5

1.0 (3.0)

5.0

5.0

5.0

5.0

5.0

8.0

10.0

16.0

20.0

AG01

EG01

EG 1

RG 10

RG 2

EL 1

RL 2

RL 3

RG 4

FML-G14S

FMN-G14S

FMX-G14S

FMG-14S, R

FML-14S

FMG-24S, R

FML-24S

FMG-34S, R

FML-34S

0.7

0.7

0.8

1.5

1.5

1.5

2.0

3.5

3.0

5.0

5.0

5.0

2.5

2.5

5.0

5.0

10.0

10.0

100

50

50

500

500

10

10

100

500

100

50

50

500

50

500

100

1000

200

22

20

17

15

12

17

12

10

8

4.0

4.0

4.0

4.0

4.0

4.0

4.0

2.0

2.0

63

64

65

67

65

67

68

69

71

74

75

74

75

76

77

0.13

0.2

0.3

0.4

0.6

0.3

0.6

1.0

1.2

2.1

2.1

2.1

2.1

2.1

2.1

2.1

5.5

5.5

15

15

15

50

50

20

40

80

80

70

70

70

35

40

65

70

100

100

0.5

0.3

0.3

2.5

2.5

0.05

0.1

0.2

2.5

0.2

10

15

1.5

0.1

2.5

0.2

5

0.4

100

100

100

100

100

100

150 (Tj)

150 (Tj)

100

100

150 (Tj)

150

100

100

100

100

100

100

100

100

100

100

100

100

50

50

100

50

100

30

100

50

100

50

100

50

50

50

50

50

50

50

35

35

50

35

50

25

50

35

50

35

50

35

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

500/500

IF/ IFP(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

1.8

2.0

1.8

1.8

1.8

1.3

1.3

1.3

1.8

1.3

1.0

1.3

2.0

1.3

2.0

1.3

2.0

1.3

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

29

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

Rth ( j- )Rth (j-c)(°C/W)

Ultra-Fast-Recovery Rectifier Diodes 400V

S type R type

S type R type

t rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (ns)

1 trr (ns)

2Fig.No.

Page

whe

re

char

acte

rist

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curv

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Page 32: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

30

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Frame-2Pin

Center-tap

Axial

600

0.5

0.5

0.6

1.0

1.0

1.2

2.0

1.0 (2.0)

3.0

4.0

5.0

5.0

5.0

10.0

10.0

10.0

8.0

3.0

6.0

15.0

20.0

AG01A

EG01A

EG 1A

RG 10A

RG 2A

RL 2A

RL 3A

RG 4A

RL 4A

FMG-G26S

FML-G16S

FMX-G16S

FMN-G16S

FML-G26S

FMD-G26S

FMX-G26S

FMG-G36S

FMC-26U

FMG-26S, R

FMG-36S, R

FML-36S

0.5

0.5

0.6

1.0

1.0

1.2

3.0

2.0

3.0

4.0

5.0

5.0

5.0

10.0

10.0

10.0

8.0

3.0

3.0

7.5

10.0

100

100

100

500

500

50

50

500

50

500

100

50

50

100

100

100

500

500

500

1000

100

22

20

17

15

12

12

10

8

8

4.0

4.0

4.0

4.0

4.0

4.0

4.0

2.0

4.0

4.0

2.0

2.0

63

64

65

67

68

69

70

71

73

73

74

77

0.13

0.2

0.3

0.4

0.6

0.6

1.0

1.2

1.2

2.1

2.1

2.1

2.1

2.1

2.1

2.1

5.5

2.1

2.1

5.5

5.5

15

10

10

50

50

30

60

50

80

50

50

50

50

100

100

100

80

50

50

80

100

0.5

0.5

0.5

2.5

2.5

0.1

0.2

2.5

0.1

3.0

0.5

15

10

0.3

0.3

0.02

3

3

3

5

0.3

100

100

100

100

100

150 (Tj)

150 (Tj)

100

150 (Tj)

100

100

150

150 (Tj)

100

150

150

100

150 (Tj)

100

100

100

100

100

100

100

100

50

50

100

50

100

50

30

100

65

50

30

100

70

100

100

65

50

50

50

50

50

35

35

50

35

50

35

25

50

40

30

25

50

35

50

50

35

100/100

100/100

100/100

100/100

100/100

100/100

100/100

100/100

500/500

100/100

500/500

100/100

100/100

500/500

500/500

100/100

500/500

500/500

100/100

100/100

500/500

IF/ IFP(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

100/200

500/1000

100/200

100/200

500/1000

500/1000

100/200

500/1000

500/1000

100/200

100/200

500/1000

1.8

2.0

2.0

2.0

2.0

1.55

1.7

2.0

1.5

2.5

1.5

1.5

1.2

1.7

1.7

1.5

2.5

2.0

2.2

2.2

1.7

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

Rth (j- )Rth (j-c)(°C/W)

Ultra-Fast-Recovery Rectifier Diodes 600Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (ns)

1 trr (ns)

2Fig.No.

Page

whe

re

char

acte

rist

ic

curv

e is

sho

wn

Page 33: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ultra-Fast-Recovery Rectifier Diodes 600V

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3 C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

31

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

9.015.0

5.0

2.8

3.5

16.5

±0.5

20.0

±0.5

20.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

+0.2–0.1

9.015.0

5.0

2.8

3.5

16.5

±0.5

20.0

±0.5

20.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

+0.2–0.1

S type R type

Page 34: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Rth (j-c)(°C/W)

Frame-2Pin

Center-tap

800

3.0

5.0

3.0

FMC-G28S

FMC-G28SL

FMC-28U

3.0

5.0

3.0

100

200

100

4.0

4.0

4.0

70

73

2.1

2.1

2.1

50

60

50

1

2

0.5

150 (Tj)

150 (Tj)

150 (Tj)

70

70

70

35

35

35

500/500

500/500

500/500

IF/ IFP(mA)

500/1000

500/1000

500/1000

3.0

3.0

3.0

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

32

Ultra-Fast-Recovery Rectifier Diodes 800Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (ns)

1 trr (ns)

2Fig.No.

Page

whe

re

char

acte

rist

ic

curv

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Page 35: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

33

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Frame-2Pin

Axial

1000

0.2

0.2

0.4

0.5

0.7

1.0 (2.0)

4.0

5.0

AP01C

EP01C

RU 1P

EG01C

RG 1C

RG 4C

FMG-G2CS

FMG-G3CS

0.2

0.2

0.4

0.5

0.7

2.0

3.0

5.0

100

5

5

50

20

500

50

100

22

20

15

20

15

8

4.0

2.0

62

66

64

65

69

71

73

0.13

0.2

0.4

0.2

0.4

1.2

2.1

5.5

5

5

10

10

10

60

30

60

0.5

0.05

0.05

0.5

0.25

2.5

0.3

0.5

100

100

100

100

100

100

100

100

200

200

100

100

100

100

100

150

80

80

50

50

50

50

50

70

100/100

100/100

100/100

100/100

100/100

500/500

500/500

500/500

IF/ IFP(mA)

100/200

100/200

100/200

100/200

100/200

500/1000

500/1000

500/1000

4.0

4.0

4.0

3.3

3.3

3.0

4.0

3.5

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

9.015.0

5.0

2.8

3.5

16.5

±0.5

20.0

±0.5

20.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

+0.2–0.1

Rth (j- )Rth (j-c)(°C/W)

Ultra-Fast-Recovery Rectifier Diodes 1000Vt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (ns)

1 trr (ns)

2Fig.No.

Page

whe

re

char

acte

rist

ic

curv

e is

sho

wn

Page 36: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

34

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Frame-2Pin

Frame-2Pin

Axial

1600

2000

1200 3.0

3.0

0.1

FMC-26UA

FMC-28UA

RP 1H

3.0

3.0

0.1

500

100

2

4.0

4.0

15

73

66

2.1

2.1

0.4

50

50

5

3.0

0.5

0.01

150 (Tj)

150 (Tj)

100

70

70

100

35

35

50

500/500

500/500

10/10

IF/ IFP(mA)

500/1000

500/1000

10/20

4.0

6.0

7.0

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

Rth (j- )Rth (j-c)(°C/W)

Ultra-Fast-Recovery Rectifier Diodes 1200V and overt rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

trr (ns)

1 trr (ns)

2Fig.No.

Page

whe

re

char

acte

rist

ic

curv

e is

sho

wn

Page 37: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

35

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

IR(mA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Surface Mount

Axial

Center-tap

30

1.0

1.0

1.0

1.0

2.0

2.0

2.0

3.0

3.0

5.0

6.0

1.0

1.0

1.0

1.5

1.7

2.0

2.5

3.0

3.0

10

20

30

MI1A3MI2A3SFPA-53SFPJ-53SFPA-63SFPE-63SFPJ-63SFPA-73SFPJ-73SPJ-G53SSPJ-63SAK 03EA 03EK 03EK 13RK 13RA 13RK 33RJ 43RK 43FMJ-23LFMJ-2203FMJ-2303

1.0

1.0

1.0

1.0

2.0

2.0

2.0

3.0

3.0

5.0

3.0

1.0

1.0

1.0

2.0

2.0

2.0

2.5

3.0

3.0

5.0

10.0

15.0

1

2

1.5

1.0

3.0

0.2

2.0

4.5

3.0

5.0

3

1

1.5

5

5

5

3

5

3

5

5

10

15

70

70

20

20

20

20

20

20

20

5

5

22

20

20

17

15

15

12

8

8

4

4

4

79

82

83

84

84

85

90

0.011

0.011

0.072

0.072

0.072

0.072

0.072

0.072

0.072

0.29

0.29

0.13

0.3

0.3

0.3

0.45

0.45

0.6

1.2

1.2

2.1

2.1

2.1

12

12

30

30

40

40

40

50

50

100

50

25

30

40

40

60

40

50

50

80

100

150

150

70

110

70

35

140

20

70

210

100

250

100

50

70

50

50

50

140

50

100

50

250

350

500

150 (Tj)

125 (Tj)

100

150

100

150 (Tj)

150

100

150

150

150 (Tj)

100 (Tj)

100

100

100

100

100

100

150

100

150 (Tj)

150

150

0.47

0.39

0.36

0.45

0.36

0.55

0.45

0.36

0.45

0.45

0.45

0.55

0.36

0.55

0.55

0.55

0.36

0.55

0.45

0.55

0.45

0.47

0.48

–40 to +150

–40 to +125

–40 to +125

–40 to +150

–40 to +125

–40 to +150

–40 to +150

–40 to +125

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +125

–40 to +150

–40 to +150

–40 to +150

–40 to +125

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

4.5±0.2

0.05

2.0min1.35±0.4 1.35±0.4

5.1

2.6±0

.22.

05±0

.2

1.1±0.2

1.5±0.2

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

2.6±0.2

3.6±0.2

0.6

±0.2

1.6

±0.2

1.1±0

.2

0 to

0.1

t0.1

5m

axRth ( j- )Rth (j-c)(°C/W)

Schottky Barrier Diodes 30V

Fig.No.

Page

whe

re

char

acte

ristic

cu

rve

is s

how

n

+0.4–0.1

6.5±0.4 2.3±0.4 5.4

4.9

4.15.4±0.4

1.7

±0.5

5.5

±0.4

2.5

±0.4

0.8±0.1 0.8

1.5max

±0.1

0.55±0.1

0.55±0.1

1.15

1 2 3

±0.1

1.2m

ax

2.29±0.52.29±0.5

0 to 0.25

0.5

±0.2

2.9

0.16

1.37

5.0

0.7

Part NumberPolarityLot No.

1 3 2 (Common to backside of case)

N.C1 Chip AnodeCathode

AnodeCenter-tap AnodeCathode (Common)

12

3

123

Page 38: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

36

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

IR(mA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Surface Mount

Axial

Frame-2Pin

Center-tap

40

0.5

1.0

1.5

2.0

2.0

3.0

5.0

6.0

1.0

1.0

1.0

1.5

1.7

2.5

3.0

3.0

5.0

10.0

15

4.0

6.0

10.0

10

10

12

15

15

15

15

20

30

30

SSB-14

SFPB-54

SFPB-64

SFPB-74

SFPE-64

SPB-G34S

SPB-G54S

SPB-64S

AK 04

AW 04

EK 04

EK 14

RK 14

RK 34

RK 44

FMB-G14

FMB-G14L

FMB-G24H

MPE-24H

FMB-24

FMB-24M

FMW-24L

FMB-24L

FME-24L

FMB-34S

FMW-24H

FME-24H

FMB-24H

FMB-34

FMB-2204

FMB-2304

FMB-34M

0.5

1.0

2.0

2.0

2.0

3.0

5.0

3.0

1.0

1.0

1.0

2.0

2.0

2.5

3.0

3.0

5.0

10.0

7.5

2.0

3.0

5.0

5.0

5.0

6

7.5

7.5

7.5

7.5

10

15

15.0

0.1

1

5

5

0.2

3.5

5

3.5

1

5

5

5

5

5

5

5

5

10

0.75

5

5

5

5

0.5

5

7.5

0.75

7.5

10

10

15

20

150

20

20

20

20

5

5

5

22

22

20

17

15

12

8

4

4

4

2.5

4

4

4

4

4

2

4

4

4

2

4

4

2

79

80

81

82

83

84

85

86

82

87

88

87

89

91

87

89

87

90

88

90

0.009

0.072

0.072

0.072

0.072

0.29

0.29

0.29

0.13

0.13

0.3

0.3

0.45

0.6

1.2

2.1

2.1

2.1

1.04

2.1

2.1

2.1

2.1

2.1

5.5

2.1

2.1

2.1

5.5

2.1

2.1

5.5

4

30

60

60

40

50

60

50

25

25

40

40

60

50

80

60

60

150

100

50

60

100

60

80

75

120

100

100

150

150

150

300

5

50

50

50

20

50

50

50

50

35

50

50

50

50

50

100

100

65

50

35

35

175

35

30

35

250

50

50

65

350

500

100

100

100

100

100

150 (Tj)

100

100

100

100 (Tj)

150

100

100

100

100

100

100

100

100

150 (Tj)

100

100

150

100

100

100

150

100

100

100

150

150

100

0.58

0.55

0.55

0.5

0.6

0.55

0.55

0.55

0.55

0.58

0.55

0.55

0.55

0.55

0.55

0.55

0.55

0.55

0.6

0.55

0.55

0.55

0.55

0.6

0.58

0.55

0.6

0.55

0.55

0.55

0.55

0.55

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

Rth (j- )Rth (j-c)(°C/W)

Schottky Barrier Diodes 40V

Fig.No.

Page

whe

re

char

acte

ristic

cu

rve

is s

how

n

Page 39: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Schottky Barrier Diodes 40V

37

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3 9.015.0

5.0

2.8

3.5

16.5

±0.5

20.0

±0.5

20.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

+0.2–0.1

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

2.803.04

0.891.04

0.0130.10

0.0850.130 0.45

0.60(0.15)

0.450.60

1.782.05

0.370.46

0.951.05

2.102.50

1.201.40

1.21.27

10.2

0.86

0.76

2.542.54

4.441.3

2.59

0.4

3.19

1.3

8.5

10.0

11.3

11.0

1.4

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

6.5±0.4 2.3±0.4 5.4

4.9

4.15.4±0.4

1.7

±0.5

5.5

±0.4

2.5

±0.4

0.8±0.1 0.8

1.5max

±0.1

0.55±0.1

0.55±0.1

1.15

1 2 3

±0.1

1.2m

ax

2.29±0.52.29±0.5

0 to 0.25

0.5

±0.2

2.9

0.16

1.37

5.0

0.7

Part NumberPolarityLot No.

1 3 2 (Common to backside of case)

N.C1 Chip AnodeCathode

AnodeCenter-tap AnodeCathode (Common)

12

3

123

123

Tolerance ±0.2unless otherwisespecified

N.CAnodeCathode

4.5±0.2

0.05

2.0min1.35±0.4 1.35±0.4

5.1

2.6±0

.22.

05±0

.2

1.1±0.2

1.5±0.2+0.4–0.1

12

3

Page 40: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

38

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

IR(mA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Surface Mount

Axial

Frame-2Pin

Center-tap

Bridge

60

0.7

2.0

2.0

5.0

6.0

0.7

0.7

1.5

1.5

2.0

3.5

6.0

4.0

10

15

20

30

30

4.0

SFPB-56

SFPB-66

SFPB-76

SPB-G56S

SPB-66S

AK 06

EK 06

EK 16

RK 16

RK 36

RK 46

FMB-G16L

FMB-26

FMB-26L

FMB-36

FMB-2206

FMB-2306

FMB-36M

RBV-406B

0.7

2.0

2.0

5.0

3.0

0.7

0.7

1.5

1.5

2.0

3.5

5.0

2.0

5.0

7.5

10.0

15

15.0

2.0

1

1

2

3

1

1

1

1

1

2

3

5

1

2.5

5

8

8

10

2

20

20

20

5

5

22

20

17

15

12

8

4

4

4

2

4

4

2

5

79

80

81

82

83

84

85

86

88

91

88

89

91

92

0.072

0.072

0.072

0.29

0.29

0.13

0.3

0.3

0.45

0.6

1.2

2.1

2.1

2.1

5.5

2.1

2.1

5.5

4.25

10

25

40

60

40

10

10

25

25

40

70

50

40

50

100

150

150

150

40

7.5

15

20

125

70

7.5

7.5

15

15

20

35

50

20

50

75

275

400

150

20

100

100

100

150

150

100

100

100

100

100

100

100

100

100

100

150

150 (Tj)

100

100

0.62

0.69

0.62

0.7

0.7

0.62

0.62

0.62

0.62

0.62

0.62

0.62

0.62

0.62

0.62

0.7

0.7

0.62

0.62

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3 9.015.0

5.0

2.8

3.5

16.5

±0.5

20.0

±0.5

20.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

+0.2–0.1

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

25

9.5

3.2C3

7.57.5 7.5

134 -1.0

4.6

3.6

15.0

17.5

0.7

±0.1

2.7±0.1

Rth (j- )Rth (j-c)(°C/W)

Schottky Barrier Diodes 60V

Fig.No.

Page

whe

re

char

acte

ristic

cu

rve

is s

how

n

4.5±0.2

0.05

2.0min1.35±0.4 1.35±0.4

5.1

2.6±0

.22.

05±0

.2

1.1±0.2

1.5±0.2+0.4–0.1

6.5±0.4 2.3±0.4 5.4

4.9

4.15.4±0.4

1.7

±0.5

5.5

±0.4

2.5

±0.4

0.8±0.1 0.8

1.5max

±0.1

0.55±0.1

0.55±0.1

1.15

1 2 3

±0.1

1.2m

ax

2.29±0.52.29±0.5

0 to 0.25

0.5

±0.2

2.90.

161.

375.

0

0.7

Part NumberPolarityLot No.

1 3 2 (Common to backside of case)

N.C1 Chip AnodeCathode

AnodeCenter-tap AnodeCathode (Common)

12

3

123

Page 41: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

39

Package Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)

IR(mA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Surface Mount

Axial

Frame-2Pin

Center-tap

Center-tap

90

100

0.7

1.5

0.7

0.7

1.5

1.5

2.0

3.5

4.0

4.0

8.0

15

20

20

20

30

SFPB-59

SFPB-69

AK 09

EK 09

EK 19

RK 19

RK 39

RK 49

FMB-G19L

FMB-29

FMB-29L

FMB-39

MPE-29G

FMB-39M

FME-220A

FME-230A

0.7

1.5

0.7

0.7

1.5

1.5

2.0

3.5

4.0

2.0

4.0

7.5

10

10.0

10

15

1

2

1

1

2

2

3

5

5

3

5

10

1

15

1

1.5

20

20

22

20

17

15

12

8

4

4

4

2

2.5

2

4

4

79

80

82

83

84

85

86

89

91

82

91

90

0.072

0.072

0.13

0.3

0.3

0.45

0.6

1.2

2.1

2.1

2.1

5.5

1.04

5.5

2.1

2.1

10

40

10

10

40

40

50

60

60

50

60

60

120

150

120

150

5

10

5

5

10

10

15

35

35

15

35

50

100

60

100

150

100

100

100

100

100

100

100

100

100

100

100

100

150 (Tj)

100

150 (Tj)

150 (Tj)

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.81

0.85

0.81

0.85

0.85

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

1.21.27

10.2

0.86

0.76

2.542.54

4.441.3

2.59

0.4

3.19

1.3

8.5

10.0

11.3

11.0

1.4

50.0

±1.0

2.9±0

.1

2.4±0.1

0.57±0.02

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.6±0.05

Cathode Mark

62.3

±0.7

5.0±0

.2

2.7±0.2

0.78±0.05

Cathode Mark

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3 9.015.0

5.0

2.8

3.5

16.5

±0.5

20.0

±0.5

20.0

0.8

3.3

3.42.3

1.0

5.455.45

5.0

0.65

2.6

+0.2–0.1

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

Rth (j- )Rth (j-c)(°C/W)

Schottky Barrier Diodes 90V and over

Fig.No.

Page

whe

re

char

acte

ristic

cu

rve

is s

how

n

4.5±0.2

0.05

2.0min1.35±0.4 1.35±0.4

5.1

2.6±0

.22.

05±0

.2

1.1±0.2

1.5±0.2+0.4–0.1

Page 42: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

40

Division Part NumberVRM(V)

IF (AV)(A)

( ) is withHeatsink

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Rth (j- )Rth (j-c)(°C/W)

1300

1500

1600

1800

1300

1500

1700

1800

1300

1600

1.0

0.8

1.0

2.0

2.5

1.5 (2.5)

2.5

10

2.5

10

1.2 (1.5)

1.5 (2.5)

2.0

5.0

5.0

10

10

10

10

10

10

8.0

10

0.5

1.0

RH 2D

RH 10F

RH 2F

RS 3FS

RH 3F

RS 4FS

RH 4F

FMV-G5FS

RH 3G

FMR-G5HS

RU 4D

RU 4DS

RP 3F

FMQ-G1FS

FMP-G2FS

FMQ-G2FLS

FMU-G2FS

FMQ-G2FS

FMQ-G2FMS

FMQ-G5FMS

FMQ-G5GS

FMP-G5HS

FMR-G5HS

RG 2A2

RC 3B2

1.0

1.0

1.0

3.0

2.5

3.0

2.5

10

2.5

10

1.5

3.0

2.0

5.0

5.0

10.0

10

10

10

10

10

8.0

10

0.5

1.0

10

10

10

50

50

50

10

50

50

20

50

50

50

50

50

50

50

50

50

50

100

25

20

100

100

12

15

12

10

10

8

8

2

10

2

8

8

10

4

4

4

4

4

4

2

2

2

2

12

10

93

94

93

97

93

96

94

93

95

96

95

96

94

0.6

0.44

0.6

1.0

1.0

1.2

1.2

6.5

1.0

6.5

1.2

1.2

1.0

2.1

2.1

2.1

2.1

2.1

2.1

6.5

6.5

6.5

6.5

0.6

1.0

60

60

60

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

50

5

20

0.5

0.5

0.5

0.5

0.5

0.5

0.35

0.7

0.5

0.2

0.5

0.5

0.5

0.5

0.5

0.5

6

0.5

0.5

0.5

0.5

0.25

0.2

0.5

0.5

100

100

100

100

100

100

100

100

100

100

100

100

100

150

100

150 (Tj)

150 (Tj)

150 (Tj)

150

100

100

100

100

100

100

4.0

4.0

4.0

2.0

4.0

1.0

4.0

2.0

4.0

1.8

0.4

0.4

0.7

0.7

0.7

1.2

0.6

0.5

0.5

0.5

0.5

1.0

1.8

0.1

0.07

1.3

1.3

1.3

0.8

1.3

0.4

1.3

0.8

1.3

0.7

0.18

0.18

0.3

0.3

0.3

0.4

0.25

0.2

0.25

0.2

0.2

0.4

0.7

0.05

0.035

10/10

10/10

10/10

100/100

100/100

100/100

100/100

500/500

100/100

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

100/100

500/500

IF/ IFP(mA)

100/200

100/200

100/200

100/200

100/200

100/200

100/200

500/1000

100/200

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

100/200

500/1000

1.0

1.0

1.0

1.1

1.3

1.5

1.5

1.5

1.3

1.6

1.8

1.8

1.7

2.0

2.0

1.8

1.6

2.8

2.4

2.4

2.7

2.0

1.6

3.5

3.6

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

62.5

±0.7

7.2±0

.2

4.0±0.2

0.78±0.05

Cathode Mark

50.0

±0.1

1.4±0.1

6.5±0.2

Cathode Mark

8.0±0

.2

62.5

±0.7

1.2±0.05

5.2±0.2

Cathode Mark

9.1±0

.2

62.5

±0.7

7.2±0

.2

4.0±0.2

0.98±0.05

Cathode Mark

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.350.85

5.08 0.45

3.3

23.0

3.0

5.5±0.2

3.45±0.2

0.8

3.35

0.65

3.315.6±0.2

1.6

3.3

16.2

5.5

9.5

1.75±1.75

1.05

5.455.45

+0.2–0.1

+0.2–0.1

Damper Diodes

For CRT Display Compensation

t rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

Fig.No.

Page

whe

re

char

acte

rist

ic

curv

e is

sho

wn

For TV

For CRT Display

trr (µs)

1 trr (µs)

2

Page 43: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

41

Division Part NumberVRM(V)

IF (AV)(A)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(A)IF/ IFP(mA)

IR(µA)

IR (H)(mA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)max

Mass(g)

Rth (j-c)(°C/W)

For TV

1500

600

1700

600

1500

600

1500

600

1500

600

1500

600

1700

800

5.0

5.0

5.0

5.0

5.0

5.0

5.0

FMV-3FU

FMV-3GU

FMP-2FUR

FMQ-2FUR

FMT-2FUR

FMP-3FU

FMQ-3GU

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

5.0

50

50

50

50

50

50

50

50

50

50

50

50

500

100

1.8

1.8

4.0

4.0

4.0

1.8

1.8

97

99

98

6.5

6.5

2.1

2.1

2.1

6.5

6.5

50

50

50

50

50

50

50

0.5

0.5

0.5

0.5

3

3

2

0.5

2

7

0.5

0.5

1

0.5

100

100

100

100

150 (Tj)

150 (Tj)

150

150

150

150

100

100

100

100

4.0

0.4

2.0

0.4

0.7

0.1

2

0.15

1.0

0.1

0.7

0.1

0.7

0.07

1.3

0.18

0.8

0.18

0.3

0.05

0.8

0.07

0.3

0.05

0.3

0.04

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

500/500

IF/ IFP(mA)

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

500/1000

1.4

1.3

1.5

1.3

2.0

2.5

1.4

1.65

1.8

1.9

2.0

2.5

2.0

4.0

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

A B

C0.5

16.9

(13.

5)8.

40.

83.

94.

0

10.0

2.22.6

4.22.8

1.351.350.85

2.54 2.54 0.45

3.3

23.0

±0.3

3.0

5.5±0.2

3.45±0.2

0.8

3.35

0.65

3.3±0.215.6±0.2

0.8±0

.21.

63.

3

16.2

5.5

9.5±0

.2

1.75

2.5

1.05

5.45±0.15.45±0.1

AB

+0.2–0.1

+0.2–0.1

Damper Diodes (Diode modulation Type)

For CRT Display

t rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)t rr : IF/ IR (=2 IF) 75% Recovery Point (ex. IF/ IR =100mA/200mA 75% Recovery Point)

1

2

Fig.No.

Page

whe

re

char

acte

rist

ic

curv

e is

sho

wn

A: Damper DiodesB: Compensation diode

A: Damper DiodesB: Compensation diode

trr (µs)

1 trr (µs)

2

Page 44: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

42

Division Part NumberVRM(kV)

IF (AV)(mA)

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V)

max

IF(mA)

IF/ IFP(mA)Ta = 100°C

IR(µA)

IR (H)(µA) trr

(µs)VR = VRMmax

VR = VRMmax

Tc(°C)

Tstg(°C) Ta

(°C)

Mass(g)

2.0

2.0

2.0

2.0

2.0

2.0

2.0

2.0

2.0

2.0

2.0

2.0

2.0

2.0

2.0

2.0

350

350

30

30

30

SHV-02

SHV-03S

SHV-03

SHV-10

SHV-12

SHV-14

SHV-16

SHV-20

SHV-24

SHV-06EN

SHV-08EN

SHV-10EN

SHV-12EN

SHV-08DN

SHV-10DN

SHV-12DN

HVR-1X-40B

UX-F5B

SHV-05JS

SHV-08J

SHV-30J

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

350

350

10

10

10

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

10

10

10

10

10

0.13

0.13

0.16

0.33

0.33

0.33

0.33

0.33

0.33

0.17

0.17

0.20

0.20

0.17

0.20

0.20

2.5

2.5

0.16

0.20

0.33

0.3

0.3

0.5

0.5

0.5

0.5

0.5

0.5

0.5

0.5

0.5

0.5

0.5

0.5

0.5

0.5

20

15

3

3

3

2

3

3

10

12

14

16

20

24

6

8

10

12

8

10

12

9

8

2.5

4.0

15.0

For General Purpose

3

3

3

3

3

3

3

3

3

3

3

3

3

3

3

3

VZ = 9.5 to 15kV

VZ = 8.5kV min

VZ = 2.6 to 5.0 (@IR = 100µA)

VZ = 4.5 to 8.0 (@IR = 100µA)

VZ = 16.0 to 30.0 (@IR = 100µA)

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

60 (Ta)

60 (Ta)

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.18

0.15

0.15

0.15

0.15

0.15

0.15

0.15

0.15

0.20

0.20

0.20

0.20

0.20

0.20

0.20

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

10/10

100/100

16

16

16

40

45

55

60

75

75

24

30

38

45

30

38

45

9

14

5

8

3

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +120

–40 to +130

–40 to +130

–40 to +150

–40 to +150

–40 to +150

*************

* FBT High Voltage Rectifier Capacitive Load, Tc 100°C

High-Voltage Rectifier Diodes t rr : IF/ IR (=IF) 90% Recovery Point (ex. IF/ IR =100mA/100mA 90% Recovery Point)

1

Fig.No.

For Automotive Ignition Coil

For Inverter Type Microwave Oven

For General Type Microwave Oven

For Ultra-High Frequency Multi-layer FBT

For High Frequency Multi-layer FBT

For General FBT

1

Page 45: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

High-Voltage Rectifier Diodes

43

3 27min27min

20.5

5 27min27min

0.5

10

2.50.5

27min27min

2.5

6.52.

527min

0.5

27min

SHV-02

SHV-03S

SHV-03

SHV-05JS

SHV-06EN

SHV-08EN

SHV-08DN

SHV-10EN

SHV-10DN

SHV-12EN

SHV-12DN

SHV-30J

Part Number External dimensionsMarking (Cathode Mark)

Pattern Color

White

White

White

Red

Red

White

Red

White

Red

White

White

Red

S

S

S

S

S

S

10

30.6

27min27min

12

30.6

27min27min

SHV-10

SHV-12

SHV-20

SHV-24

HVR-1X-40B

UX-F0B

SHV-08J

SHV-14

SHV-16

White

White

White

White

1.2

22min 22min21±1 7±0.5

7±0.5

27min 8±0.2

0.6

27min

3

The SHV series of diodes have been miniaturized by resin on the assumption fo remolding. Measures against creeping discharge and humidity stress must be taken when usingthese diodes.The taping specifications of the SHV series differ from ordinary diodes. (P.10)

Page 46: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

44

Part NumberVZ(V)

VRDC(V)

(–10°C)

ITSM(A)

50HzHalf-cycle Sinewave

Single Shot

IR(µA)

IR (H)(µA)

VR = VRMmax

VR = VRMmax

Tj(°C)

Tstg(°C) Ta

(°C)

Mass(g)(typ)

RZ1030

RZ1040

RZ1055

RZ1065

RZ1100

RZ1125

EZ0150

RZ1150

RZ1155

RZ1175

RZ1200

10

10

10

10

10

10

10

10

10

10

10

0.03

0.05

0.07

0.08

0.10

0.14

0.18

0.18

0.18

0.22

0.30

100

101

100

100

101

0.44

0.44

0.44

0.44

0.44

0.44

0.2

0.44

0.44

0.44

0.44

30

30

30

30

30

30

30

30

30

30

30

27 to 33

34 to 40

50 to 60

60 to 70

90 to 110

115 to 135

140 to 160

150 to 165

165 to 185

185 to 215

20

28

40

50

80

105

125

125

138.7

150

180

50

50

50

50

50

50

50

50

50

50

50

100

100

100

100

100

100

100

100

100

100

100

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +150

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

–40 to +125

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

62.5

±0.7

7.2

±0.2

4.0±0.2

0.78±0.05

Cathode Mark

62.3

±0.7

5.0

±0.2

2.7±0.2

0.6±0.05

Cathode Mark

Avalanche Diodes with built-in ThyristorFig.No.

Page

whe

re

char

acte

ristic

cu

rve

is s

how

n

Equivalent circuit diagram

Page 47: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Part NumberVZ(V)

IZ = 1mA

PR(W)

P.W = 5ms

VDC(V)

IZSM(A)

Rectangular wave single shot

IR(µA)

IR (H)(µA)

VZRZ(Ω)

IZ = 1.0A to 10A

VF(V)

maxVR = VDC

max VR = VDC

max

Tj(°C)

Tstg(°C) Ta

(°C)IF(A)

Mass(g)

SFPZ-68

PZ 628

SPZ-G36

10

500

5

0.95

0.95

0.98

1.0

5.0

3.0

102

0.072

2.6

0.29

0.02

0.02

0.03

0.03 typ

0.03 typ

0.24 typ

2

65

11

28±3.0

28±3.0

36±3.6

50

1500

450

20

20

30

1000

1000

1000

150

150

150

–40 to +150

–40 to +150

–40 to +150

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

45

56.0

±0.7

1.3±0.05

10.0±0.2

C2

10.0

±0.0

2

Cathode Mark

6.5±0.42.3±0.4 5.4

4.9

4.15.4±0.4

1.7±0

.55.

5±0.4

2.5±0

.4

0.8±0.1 0.8±0.1

1.5max

0.55±0.1

0.55±0.1

1.15±0.1

1.2m

ax

2.29±0.52.29±0.5

0 to 0.25

0.5±0

.2

2.9

0.16

1.37

5.0

0.7

4.5±0.2

0.05

2.0min1.35±0.4 1.35±0.4

5.1

2.6±0

.22.

05±0

.2

1.1±0.2

1.5±0.2+0.4–0.1

Power Zener DiodesFig.No.

Page

whe

re

char

acte

ristic

cu

rve

is s

how

n

Part NumberPolarityLot No.

123

12

3

10msInstantaneous

Temperature dependence

(V/°C)IZ = 1mA

Page 48: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Part Number

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V) IF

(mA)

IF(µA)max

VF(V)

Rth (j- )(°C/W)

Tj(°C)

Tstg(°C)

Mass(g)

20

50

50

50

0.2

1.2

0.6

0.9

VR-60SS

VR-61SS

SV-2SS

SV-3SS

SV-4SS

1000

1

10

70

100

100

1

10

30

20

20

20

20

20

0.3

0.3

0.3

0.3

0.3

103

15

7.5

1.5 max

2.3±0.25

2.75±0.25

3.1±0.25

4.0 max

2.0 max

1.8±0.2

2.15±0.2

2.4±0.25

–40 to +100

–40 to +100

–40 to +100

–40 to +100

–40 to +100

46

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

Internal junction

Color indication

Part Number SV-2SS SV-3SS SV-4SS

Red

Orange White White

62.3

±1.0

5.0

±0.2

2.7±0.2

0.6

VR-60SS VR-61SS

Orange

Red

Orange

Symmetrical type Silicon VaristorsFig.No.

Page

whe

re

char

acte

ristic

cu

rve

is s

how

n

Page 49: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

External Dimensions Flammability: UL94V-0 or Equivalent (Unit: mm)

Part Number

IFSM(A)

50HzHalf-cycle Sinewave

Single Shot

VF(V)

IR(µA)IF

(mA)

IF(µA)max

VR(V)

Tj(°C)

Tstg(°C)

Mass(g)

200

150

100

80

70

100

100

100

100

100

10

10

10

10

10

SV 02YS

SV 03YS

SV 04YS

SV 05YS

SV 06YS

1

70

1

70

1

70

1

70

1

70

20

20

20

20

20

103

0.3

0.3

0.3

0.3

0.3

30

16

12

10

8

1.2±0.2

1.5±0.25

1.8±0.2

2.3±0.25

2.35±0.2

3.0±0.3

3.0±0.3

3.8±0.4

3.5±0.4

4.5±0.45

–40 to +130

–40 to +130

–40 to +130

–40 to +130

–40 to +130

Rth (j- )(°C/W)

47

Internal junction

Part Number SV 02YS SV 03YS SV 04YS SV 05YS SV 06YS

62.3

±2.0

5.0

±0.2

2.7±0.2

0.6

Cathode Mark

Unsymmetrical type Silicon Varistors

Part NumberManufacturing dateFirst character: Year (Last digit of year)Second character: Month (1 to 9, O, N, D)Manufacturing period First 10 days of month Middle 10 days of month Last 10 days of month

SV

02

08

Fig.No.

Page

whe

re

char

acte

ristic

cu

rve

is s

how

n

Cathode band Color: White

➀➁

➁➂

Page 50: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

48

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

0.3 0.5 0.7 0.9 1.1 1.3 1.5Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

T a 150°C=

60°C 100°C

25°C

0.3 0.5 0.7 0.9 1.1 1.3

T a 150°C=

60°C 100°C

25°C

0 1

IFMS Rating

5

40

30

50 10

25

VF—IF Characteristics (Typical)

VF—IF Characteristics (Typical)

t 1.6 P.C.B.Solder Land

= 3.0 35µmCu

20ms

I FS

M (A

)

35

20

15

10

5

0

Overcurrent Cycles

1

IFMS Rating

5

30

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

50 10

25 20ms

I FS

M (A

)

20

15

10

5

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

t 1.6 P.C.B.Solder Land

= 3.0 35µmCu

SFPM-5 series

SFPM-6 series

10

1

0.1

0.01

0.001

2010

1

0.1

0.01

0.001

Ta—IF (AV) Derating

Ta—IF (AV) Derating

VF—IF Characteristics (Typical)

VF—IF Characteristics (Typical)

VF—IF Characteristics (Typical)

0.5 0.7 0.9 1.1 1.3 0.3 1.5 1.7

T a 150°C=

60°C 100°C

25°C

0.1

0.3

10

1

0.01

0.001

0.1

10

1

0.01

0.001

50

0.1

10

1

0.01

0.001

40

0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1

T a 150°C=

60°C 100°C

25°C

0.3 0.5 0.7 0.9 1.0

0 1

IFMS Rating

5

45

30

50 10

20

20ms

10

40

0 1

IFMS Rating

5

45

30

50 10

20

20ms

10

40

EM1BEM1C

EM 1YEM 1ZEM 1EM 1A

0 1

IFMS Rating

5

35

20

50 10

10

20ms30

AM01 series

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

EM01 series

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

EM 1 series

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

L=10 mm L=10 mm

P.C.B. 10mm

T a 100°C=

60°C 25°C

Ta—IF (AV) Derating

Ta—IF (AV) Derating

Ta—IF (AV) Derating

Characteristic Curves

Rectifier Diodes

SolderCopper Foil180 • 100 • 1.6 t

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Page 51: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Rectifier Diodes

49

VF— IF Characteristics (Typical)

VF— IF Characteristics (Typical)

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

0.5 0.6 0.7 0.9 1.0 1.10.8

5.0

1.0

0.5

0.1

0.05

0.5 0.7 0.9 1.1 1.3

50

1

0.1

10

0.3 1.5

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

0.4 0.6 0.8 1.0 1.2 0.2

T a 150°C=

60°C 100°C

25°C

0 1

IFMS Rating

5 50 10

40

80

20

0 1

IFMS Rating

5

40

50 10

30

10

50

RM 1BRM 1C

RM 1ZRM 1RM 1A

20

0 1

IFMS Rating

5

100

60

50 10

40

80

20

60

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

RM1ZRM1RM1A

RM1BRM1C

RM 11 series

EM 2 series

RM 1 series

0.01

0.001

30

1

0.1

10

0.01

0.001

L=10 mm L=10 mm

P.C.B 10mm

T a 130°C=

100°C 25°C

Ta— IF (AV) Derating

Ta— IF (AV) Derating

Ta— IF (AV) Derating

VF— IF Characteristics (Typical)

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

RM10Z

RM10RM10ARM10B

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

0.05

0.1

0.5

1.0

5.0

0.5 0.6 0.7 0.8 0.9 1.0 1.1

VF— IF Characteristics (Typical)

0.05

0.1

0.5

1.0

5.0

0.5 0.6 0.7 0.8 0.9 1.0 1.1

0 1

IFMS Rating

5 50 10

20ms

50

RM10Z

RM10RM10ARM10B

1

IFMS Rating

5 50 10

20ms

100

150

0

20

100

80

60

40

RM 10 series

RM 2 series

L=15mm L=15mm

P.C.B 10mm

T a 130°C=

25°C 100°C

T a 130°C=

25°C 100°C

Ta— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

I FS

M (A

)I F

SM

(A)

SolderCopper Foil180 • 100 • 1.6 t

SolderCopper Foil180 • 100 • 1.6 t

Page 52: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C) Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Rectifier Diodes

50

VF— IF Characteristics (Typical)

0.4 0.6 0.8 1.0 1.2 0.2

T a 150°C=

60°C 100°C

25°C

1

IFMS Rating

5 50 10

20ms

0

20

40

60

80

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

RO 2 series

1

10

50

0.1

0.01

0.001

Ta— IF (AV) Derating

VF— IF Characteristics (Typical)

VF— IF Characteristics (Typical)

0 25 50 75 100 125 1500

0.5

1.0

1.5

2.0

2.5

0 25 50 75 100 125 1500

3.00

3.75

2.25

1.50

0.75

20•20•1t Cu Heatsink on both sides

Without Heatsink

0 25 50 75 100 125 1500

0.7

1.4

2.1

2.8

3.5

20•20•1t Cu Heatsink on both sides

Without Heatsink

0.5 0.7 0.9 1.1 0.3

T a 100°C=

25°C

1

0.1

10

100

0 1.0 2.0

Ta=1

00°C

Ta=

25°C

0 1

IFMS Rating

5 50 10

20ms

50

150

100

0 1

IFMS Rating

5

120

50 10

80

40

160

200

RM4BRM4C

RM 4YRM 4ZRM 4RM 4A

0 1

IFMS Rating

5 50 10

20ms

350

100

200

300

RM3C

RM 3 series

RM 4 series

RM 4M series

10

1

0.1

0.01

0.001

0 0.2 0.4 0.6 0.8 1.0 1.2

VF— IF Characteristics (Typical)

10

100

0.1

0.01

0.001

T a 150°C=

25°C 100°C

1

L= 20 mm L= 20 mm

P. C. B. 1.6 tSolder Land 5.5

5mm 5mm

5mm 5mm

Ta— IF (AV) Derating

Ta— IF (AV) Derating

Ta— IF (AV) Derating

0 1

IFMS Rating

5 50 10

20ms

10

100

20

30

40

50

60

70

80

90

75

10

0

2

4

6

8

90 105 120 135 150

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Forw

ard

Pow

er L

oss

PF

(W)

0 42 6 8 100

3

6

9

12

15

D.C.

Tt

T 150°C=j

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

FMM-2 series

Average Forward Current IF(AV) (A)

IF(AV)—PF Characteristics

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc—IF(AV) Derating

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Page 53: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ambient Temperature Ta (°C)

Case Temperature Tc (°C)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Rectifier Diodes

51

0 1

IFMS Rating

5 50 10

20ms

10

100

20

30

40

50

60

70

80

90

110

120

1000

110 120 130 140 150

4

8

12

16

20

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Forw

ard

Pow

er L

oss

PF

(W)

5

0

10

15

20

25

04 8 12 16 20

D.C.

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

Tt

T 150°C=j

FMM-3 series

Average Forward Current IF(AV) (A)

IF(AV)—PF Characteristics

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc—IF(AV) Derating

0 1

IFMS Rating

5

40

50 10

20

20ms

80

RBV-401, 402

0 25 50 75 100 125 1500

1.0

2.0

3.0

4.0

40

RBV-404, 406

RBV-408, 40C

0 1

IFMS Rating

5 50 10

40

20ms

100

60

0 1

IFMS Rating

5

40

50 10

20

20ms

80

60

80

20

60

VF— IF Characteristics (Typical)

0.5 1.0 0 1.5 2.0

1

10

100

0.1

0.01

VF— IF Characteristics (Typical)

1

10

100

0.1

0.01

VF— IF Characteristics (Typical)

1

10

100

0.1

0.01

T a 150°C=

60°C 100°C

25°C

0.5 1.0 0 1.5 2.0

T a 150°C=

60°C 100°C

25°C

0.5 1.0 0 1.5

T a 150°C=

60°C 100°C

25°C

0 25 50 75 100 125 1500

1.0

2.0

3.0

4.0

40

0 25 50 75 100 125 1500

1.0

2.0

3.0

4.0

40

Ta— IF (AV) Derating

Ta— IF (AV) Derating

Ta— IF (AV) Derating

RBV-406M

0 1

IFMS Rating

5 50 10

40

20ms

120

100

80

20

60

VF— IF Characteristics (Typical)

1

10

100

0.1

0.010.5 1.0 0 1.50 25 50 75 100 125 150

0

1.0

2.0

3.0

4.0

40

60°C 100°C

25°C

T a 150°C=

Ta— IF (AV) Derating

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Page 54: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Rectifier Diodes

52

RBV-406HVF— IF Characteristics (Typical)

1

10

100

0.1

0.010.5 1.0 0 1.50 25 50 75 100 125 150

0

1.0

2.0

3.0

4.0

40

T a 150°C=

60°C 100°C

25°C

0 1

IFMS Rating

5 50 10

40

20ms

120

100

80

20

60

Ta— IF (AV) Derating

0 1

IFMS Rating

5

40

50 10

20

20ms

120

RBV-601, 602

0 25 50 75 100 125 1500

1.0

2.0

3.0

6.0

4.0

5.0

40

0 25 50 75 100 125 1500

1.0

2.0

3.0

6.0

4.0

5.0

40

0 25 50 75 100 125 1500

1.0

2.0

3.0

6.0

4.0

5.0

40

RBV-604, 606

RBV-608

0 1

IFMS Rating

5 50 10

40

20ms

170

100

120

140

160

60

80

100

0 1

IFMS Rating

5

60

90

50 10

30

20ms

150

120

80

20

60

VF— IF Characteristics (Typical)

0.5 1.0 0 1.5

1

10

100

0.1

0.01

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

0.5 1.0 0 1.5

1

10

100

0.1

0.01

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

0.5 1.0 0 1.5

1

10

100

0.1

0.01

T a 150°C=

60°C 100°C

25°C

Ta— IF (AV) Derating

Ta— IF (AV) Derating

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

1.0

2.0

3.0

6.0

4.0

5.0

40

RBV-606H

0 1

IFMS Rating

5 50 10

40

20ms

140

120

100

80

20

60

1.4

VF— IF Characteristics (Typical)

0.2 0.4 0.6 0.8 1.0 1.2 0

1

10

50

0.1

0.001

0.01

T a 150°C=

60°C 100°C

27°CAve

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Page 55: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Case Temperature Tc (°C)

Case Temperature Tc (°C)

Case Temperature Tc (°C)

Case Temperature Tc (°C)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Rectifier Diodes

53

0 1

IFMS Rating

5 50 10

100

20ms

150

50

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

0 20 40 60 80 100 120 140 160

20 40 60 80 100 120 140 160

0

3

6

9

12

15

0

2

4

6

8

10

12

14

0 20 40 60 80 100 120 140 1600

3

6

9

12

15

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

t /T 1/3, Sinewave=

t /T 1/6=

t /T 1/2=

D.C.

00

2 4 6 8 10 12 14 16

Average Forward Current IF(AV) (A)

Average Forward Current IF(AV) (A)

Average Forward Current IF(AV) (A)

Average Forward Current IF(AV) (A)

0 2 4 6 8 10 12 14

10

20

30

40

50Fo

rwar

d P

ower

Los

s P

F (W

)Fo

rwar

d P

ower

Los

s P

F (W

)Fo

rwar

d P

ower

Los

s P

F (W

)Fo

rwar

d P

ower

Los

s P

F (W

)

10

20

30

40

50

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Tt

T 150°C=j

00

2 4 6 8 10 12 14 16

10

20

30

40

50

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Tt

T 150°C=j

0 1

IFMS Rating

5 50 10

200

100

20ms

150

50

RBV-1506S

0 1

IFMS Rating

5 50 10

60

40

20ms

80

20

RBV-1306

RBV-1506

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Tt

T 150°C=j

Tc—IF(AV) Derating

Tc—IF(AV) Derating

Tc—IF(AV) Derating

Tc—IF(AV) Derating

IF(AV)—PF Characteristics

IF(AV)—PF Characteristics

IF(AV)—PF Characteristics

IF(AV)—PF Characteristics

0 1

IFMS Rating

5 50 10

350

200

20ms300

100

250

150

50

0 20 40 60 80 100 120 140 1600

25

15

5

10

20

t /T 1/3, Sinewave=

t /T 1/6=

t /T 1/2=

D.C.

00

4 8 12 16 20 24 28 32

20

40

60

80

100

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Tt

T 150°C=j

RBV-2506

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Page 56: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ambient Temperature Ta (°C)

Ambient Temperature Ta (°C)

Ambient Temperature Ta (°C)

Ambient Temperature Ta (°C)

Ambient Temperature Ta (°C)

Forward Voltage VF (V)

Forward Voltage VF (V)

Forward Voltage VF (V)

Forward Voltage VF (V)Forward Voltage VF (V)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Overcurrent Cycles

Overcurrent Cycles

Overcurrent Cycles

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Forw

ard

Cur

rent

I F

(A)

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Forw

ard

Cur

rent

I F

(A)

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Forw

ard

Cur

rent

I F

(A)

Forw

ard

Cur

rent

I F

(A)

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Forw

ard

Cur

rent

I F

(A)

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

54

0 25 50 75 100 125 1500

0.4

0.2

1.0

0.4 0.6 0.8 1.0 0.2 1.2 1.4 1.6

T a 150°C= 120°C 100°C 70°C 25°C

VF— IF Characteristics (Typical)

0 1

IFMS Rating

5 50 10

20ms

8

20

16

12

4

0.6

0.8

50

P.C.B. t 1.63.0 t50µCu

AS01 series

1

1020

0.1

0.01

0.001

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

ES01F

L=10mm L=10mm

P.C.B 10mm

0.6 1.0 1.4 1.8 0.2 2.2 2.6

T a 150°C=

100°C 60°C 25°C

VF— IF Characteristics (Typical)

0 1

IFMS Rating

5 50 10

20ms

30

20

10

ES01F

ES01ZES01ES01A

0.4

0.2

1.0

0.6

0.8

ES01 series

1

10

30

0.1

0.01

0.001

ES01ZES01ES01A

Ta— IF (AV) Derating

0.2 0.6 1.0 1.4 1.8

Ta=1

30°C

100°

C25

°C

VF— IF Characteristics (Typical)

0.1

0.01

0.001

1

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.050

P.C.B. t 1.63.0 t50µCu

1

IFMS Rating

5 50 10

20ms

0

15

10

5

0.4 0.6 0.8 1.0 0.2 1.2 1.4 1.6

T a 150°C=

100°C 60°C 25°C

VF— IF Characteristics (Typical)

1

10

0.1

0.01

0.001

AU 01 seriesTa— IF (AV) Derating

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.050

P.C.B. t 1.63.0 t50µCu

1

IFMS Rating

5 50 10

20ms

0

25

15

20

10

5

0.3 0.5 0.7 0.9 1.1 1.3 0.1 1.5

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

1

20

0.1

0.01

0.001

10

AU 02 seriesTa— IF (AV) Derating

0 25 50 75 100 125 1500

0.05

0.10

0.15

0.20

0.25L=10mm L=10mm

P.C.B 10mm

0 1

IFMS Rating

5 50 10

15

10

5

20ms

EU01 series

0 0.2 0.6 0.8 1.2 1.4 1.8

VF— IF Characteristics (Typical)

1

10

0.1

0.01

0.001

T a 150°C=

25°C 100°C

0.4 1.0 1.6

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

(ES01F)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

I FS

M (A

)

I FS

M (A

)

SolderCopper Foil180 • 100 • 1.6 t

SolderCopper Foil180 • 100 • 1.6 t

Page 57: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)Forward Voltage VF (V) Overcurrent Cycles

Forw

ard

Cur

rent

I F

(A)

Forw

ard

Cur

rent

I F

(A)

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

55

0 1

IFMS Rating

5 50 10

20ms

10

30

20

0.2 0.5 1.0 1.5

VF— IF Characteristics (Typical)

T 100°Ca =

60°C25°C

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

1

10

0.1

0.01

0.001

EH 1 seriesTa— IF (AV) Derating

0 25 50 75 100 125 150

ES 1F

0.6 1.0 1.4 1.8 0.2 2.2

T a 150°C=

100°C 60°C 25°C

VF— IF Characteristics (Typical)

0 1

IFMS Rating

5 50 10

20ms

30

20

10

ES 1F

ES 1ZES 1ES 1A

0

0.4

0.2

1.0

0.6

0.8

ES 1ZES 1ES 1A

ES 1 series

1

10

40

0.1

0.01

0.001

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0L=10mm L=10mm

P.C.B 10mm

0.3 0.5 0.7 0.9 1.1 0.1 1.3

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

0 1

IFMS Rating

5 50 10

15

10

5

20ms

EU02 series

1

10

0.1

0.01

0.001

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

0.05

0.10

0.15

0.20

0.25

0 1

IFMS Rating

5 50 10

15

10

5

20ms

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

T a 150°C=

25°C 100°C

VF— IF Characteristics (Typical)EU 1 series

1

20

0.1

0.01

0.001

10

Ta— IF (AV) Derating

0.2 0.6 1.0 1.4 1.8

Ta=1

30°C

100°

C25

°C

VF— IF Characteristics (Typical)

0.1

0.01

0.001

1

(ES 1F)

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

0 1

IFMS Rating

5 50 10

15

10

5

20ms

0.3 0.5 0.7 0.9 1.1 0.1 1.3

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)EU 2 series

1

10

0.1

0.01

0.001

Ta— IF (AV) Derating

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

SolderCopper Foil180 • 100 • 1.6 t

Page 58: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

56

0 25 50 75 100 125 1500

0.1

0.2

0 1

IFMS Rating

5 50 10

20ms

10

20

0.8 1.2 1.4 1.6 1.85

50

500

Ta=1

30°C

100°

C

10

100

0.6 1.0

25°C

VF— IF Characteristics (Typical)

5

15

0.25

0.15

0.05

RC 2Ta— IF (AV) Derating

0 1

IFMS Rating

5 50 10

20ms

10

35

25

30

20

15

5

0.6 0.8 0.9 1.0 1.1

0.1

0.5 0.7

Ta=1

30°C

100°

C

25°C

0.5

1.0

5.0

0.05

VF— IF Characteristics (Typical)

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

RH 1 seriesTa— IF (AV) Derating

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

0 1

IFMS Rating

5 50 10

20ms25

15

30

20

10

5

RS 1 series

0 0.2 0.4 0.6 1.0 1.2 1.4

VF— IF Characteristics (Typical)

1

10

0.1

0.01

0.001

T a 150°C=

25°C 100°C

0.8

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

0.4 0.6 0.8 1.0 1.2 0.2

VF— IF Characteristics (Typical)

T a 150°C=

70°C 100°C

25°C

0 1

IFMS Rating

5 50 10

25

10

5

20ms

15

20

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

EU 2YX

1

10

0.1

0.01

0.001

20Ta— IF (AV) Derating

0 25 50 75 100 125 1500

0.15

0.45

0.6VF— IF Characteristics (Typical)

0.6 0.8 0.9 1.0 1.1

0.1

0.5 0.7

Ta=13

0°C

100°

C25

°C

0.5

1.0

5.0

0.051.2

0 1

IFMS Rating

5 50 10

20ms

15

10

5

RF 1 series

0.3

RF 1 seriesTa— IF (AV) Derating

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Page 59: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

57

0 25 50 75 100 125 1500

0.15

0.1

0.15

0.2

0.25

0.60.05

1.1

VF— IF Characteristics (Typical)

0.6 0.8 0.9 1.0 1.1

0.1

0.5 0.7

Ta=1

30°C

100°

C

25°C0.5

1.0

5.0

0.051.2

VF— IF Characteristics (Typical)

0.7

0.1

0.5

1.0

2.0

1.00.8 0.9

Ta=1

30°C

25°C10

0°C

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

0 1

IFMS Rating

5 50 10

20ms

15

10

5

20

0 1

IFMS Rating

5 50 10

20ms

15

10

5

RU 1 series

RU 2 series

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

1.5

1.2

0.9

0.6

0.3

0 1

IFMS Rating

5 50 10

20ms

15

10

5

20

0.3 0.5 0.7 0.9 1.1 0.1

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)RU 2M series

1

10

0.1

0.01

0.001

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

1.5

60

1.2

0.9

0.6

0.3

0.3 0.5 0.7 0.9 1.1 0.1 1.3

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

1

IFMS Rating

5 50 10

20ms

0

50

10

20

30

40

RU 20A

1

10

20

0.1

0.01

0.001

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

1

IFMS Rating

5 50 10

20ms

0

10

20

30

0.3 0.5 0.7 0.9 1.1

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)RU 2YX

1

10

20

0.1

0.02

L=10mm L=10mm

P. C. B. 10mm

Ta— IF (AV) Derating

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

SolderCopper Foil180 • 100 • 1.6 t

Page 60: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

58

1

IFMS Rating

5 50 10

20ms

0

25

5

10

15

20

0 25 50 75 100 125 1500

0.5

1.0

1.5

2.0L=10mm L=10mm

P. C. B. 10mm

RU3,RU3A,RU3C,

RU3B

0.2 0.4 0.6 0.8 1.0 1.2 1.4

T a 100°C=

25°C 50°C

VF— IF Characteristics (Typical)RU 3 series

1

10

0.1

0.01

0.001

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

0.5

0.1

1.5

2.0L=10mm L=10mm

P.C.B 10mm

0.3 0.5 0.7 0.9 1.1 0.1

VF— IF Characteristics (Typical)

T a 150°C=

60°C 100°C

25°C

0 1

IFMS Rating

5 50 10

50

40 20ms

30

20

10

RU 3M series

1

1020

0.1

0.01

0.001

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

0.5

1.0

1.5

2.0L=10mm L=10mm

P.C.B 10mm

0.3 0.5 0.7 0.9 0.1

T a 150°C=

50°C 100°C

25°C

VF— IF Characteristics (Typical)

0 1

IFMS Rating

5 50 10

50

40 20ms

30

20

10

RU 3YX

1

10

0.1

0.01

0.001

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

1.0

2.0

2.5

3.0

3.5

0 1

IFMS Rating

5 50 10

200

80

40

20ms

120

160

0.3 0.5 0.7 0.9 0.1 1.0 1.2

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

1.5

0.5

60

Without Heatsink

180

140

100

60

20

RU 30RU 30A

With H

eatsink

5mm

20•20•1tCu

5mm

RU 30 series

1

50

0.1

0.01

0.001

10

Ta— IF (AV) Derating

RU 30YRU 30Z

RU 30RU 30A

RU 30YRU 30Z

0

30

60

90

120

150

1

IFMS Rating

5 50 10

20ms

RU 31, 31A

DC

t /T=1/3, Sinewave

tT

Tj =150°C

0

1

2

3

4

5

Forw

ard

Pow

er L

oss

PF

(W)

0 0.5 1 1.5 2 32.5Average Forward Current IF(AV) (A)

IF(AV)—PF Characteristics

t /T=1/6

t /T=1/2

DC

t /T=1/3, Sinewave

tT

Tj =150°C

0

0.5

1

1.5

2

2.5

3

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

70 90 110 130 150

T —IF(AV) Derating

t /T=1/6

t /T=1/2

Lead Temperature T (°C)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

SolderCopper Foil180 • 100 • 1.6 t

SolderCopper Foil180 • 100 • 1.6 t

SolderCopper Foil180 • 100 • 1.6 t

Page 61: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

59

0 25 50 75 100 125 1500

1.0

2.0

3.0

0 1

IFMS Rating

5 50 10

20ms

10

60

5mm

20•20•1tCu

5mm

VF— IF Characteristics (Typical)

0.4 0.8 1.2 1.6 0 2.0

T a 150°C=

60°C 100°C

25°C

20

30

40

50

0 1

IFMS Rating

5 50 10

20ms

10

20

30

40

50

3.5

0 1

IFMS Rating

5 50 10

20ms

10

20

30

40

50

60

70

RU 4Y, 4Z

RU 4, 4A, 4B

RU 4C

1

10

50

0.1

0.01

0.001

VF— IF Characteristics (Typical)

0.4 0.8 1.2 1.6 0 2.0

T a 150°C=

60°C 100°C

25°C

1

10

50

0.1

0.01

0.001

VF— IF Characteristics (Typical)

0.4 0.8 1.2 1.6 0 2.0

T a 150°C=

60°C 100°C

25°C

1

10

50

0.1

0.01

0.001

0 25 50 75 100 125 1500

1.0

0.5

1.5

2.0

2.5

3.0

60

5mm

20•20•1tCu

5mm

0 25 50 75 100 125 1500

1.0

0.5

1.5

2.0

60

5mm

20•20•1tCu

5mm

2.5

With H

eatsink

Without Heatsink

With H

eatsinkWithout Heatsink

With H

eatsink

Without Heatsink

Ta— IF (AV) Derating

Ta— IF (AV) Derating

Ta— IF (AV) Derating

0 1

IFMS Rating

5 50 10

20ms

10

100

0 25 50 75 100 125 1500

1.0

2.0

4.0

60

3.0

Without Heatsink

With H

eatsink

20

30

40

50

60

70

80

90

5mm

20•20•1tCu

5mm

RU 4YX

0 0.2 0.4 0.6 1.0

VF— IF Characteristics (Typical)

1

100

0.1

0.01

0.001

T a 150°C=

25°C 100°C

10

0.8

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

0 25 50 75 100 125 1500

1.0

2.0

3.0

60

Without Heatsink

With H

eatsink

3.5

0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

5mm

20•20•1tCu

5mm

0 1

IFMS Rating

5 50 10

20ms

10

20

30

40

50

60

70

RU 4M series

1

10

50

0.1

0.01

0.001

Ta— IF (AV) Derating

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Page 62: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

60

Tc—IF(AV) Derating

Tc—IF(AV) Derating

Tc—IF(AV) Derating

1

IFMS Rating

5 50 10

20ms

100

80

60

40

20

070 80 90 110

8

0100 150

10

6

4

2

120 130 140

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

FMU-G2YXS

1

10

50

0.1

0.01

0.001

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Forw

ard

Pow

er L

oss

PF

(W)

Forw

ard

Pow

er L

oss

PF

(W)

0 1

IFMS Rating

5

20

50 10

10

20ms

30

0 1

IFMS Rating

5 50 10

10

20ms

40

30

20

70 80 90 110

4

0100 150

5

3

2

1

120 130 140

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

70 80 90 110

8

0100 150

10

6

4

2

120 130 140

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

0.3 0.5 0.7 0.9 0.1 1.1 1.3 1.5

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

FMU-G16S

FMU-G26S

1

10

50

0.1

0.01

0.001

1

10

50

0.1

0.01

0.001

0 1

IFMS Rating

5 50 10

30

20ms

10

D.C.

0

10

20

01 2 3 4 5

IF(AV)—PF Characteristics

Average Forward Current IF(AV) (A)

t /T 1/6=

t /T 1/2=

Tj =150°C

Tt

0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

25

20

15

5

t /T 1/3, Sinewave=

FMU-1 series

1

1020

0.1

0.01

0.001

0

12

20

02 4 6 8 10

16

8

4

t /T 1/6=

t /T 1/3, Sinewave=

D.C.

t /T 1/2=

IF(AV)—PF Characteristics

Average Forward Current IF(AV) (A)

0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

0 1

IFMS Rating

5 50 10

40

20

20ms

30

10

Tj =150°C

Tt

FMU-2 series

1

10

50

0.1

0.01

0.001

Case Temperature Tc (°C)

Case Temperature Tc (°C)

Case Temperature Tc (°C)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Page 63: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Characteristic Curves

Fast-Recovery Rectifier Diodes

61

0

30

50

04 8 12 16 20

40

20

10D.C.

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

IF(AV)—PF Characteristics

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

VF— IF Characteristics (Typical)

0 1

IFMS Rating

5 50 10

80

40

20ms

60

20

10

30

50

70Tj =150°C

Tt

FMU-3 series

1

10

50

0.1

0.01

0.001

I FS

M (A

)

Page 64: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

62

0 25 50 75 100 125 1500

0.1

0.05

0.15

0.2

AP01C

0 1

IFMS Rating

5 50 10

3

20ms

5

2

1

4

1

0.1

0.01

0.001

50

P.C.B. t 1.6

3.0 t50µCu

1.0 2.0 3.0 0 4.0

T a 150°C=

100°C 25°C

VF— IF Characteristics (Typical)Ta— IF (AV) Derating

0 25 50 75 100 125 1500

0.1

0.05

0.15

0.2

EP01C

0 1 5 50 10

3

20ms

5

2

1

4

10

1

0.1

0.01

0.001

L=10mm L=10mm

P.C.B 10mm

2.0 4.0 6.0 8.0 0 10.0

T a 150°C=

100°C

25°C 70°C

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

T a 150°C=

60°C 100°C

25°C

0.4 0.6 0.8 1.0 0.2 1.2 1.4 1.6

0.4 0.6 0.8 0.2 1.0 1.2 1.4

T a 150°C=

60°C 100°C

25°C

t 1.6 P.C.B.Solder Land

= 3.0 35µmCu

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

t 1.6 P.C.B.Solder Land

= 3.0 35µmCu

0 1 5 50 10

25

20ms20

15

10

5

0 1 5 50 10

25

20ms20

15

10

5

SFPL--62

SFPX--62

SFPL--52

1

10

0.1

0.01

0.001

1

10

0.1

0.01

0.001

20

0 40 16080 120 2000.0001

0.001

1

0.1

0.01

2

t /T =1/3, Sinewave

t /T =1/2

D.C.

t /T =1/6

0 0.5 1.0 1.50

0.5

1.0

1.5

2.0

2.5

Tt

Tj=150ºC

VR=200V

50 70 90 110 130 1500

0.5

1.0

1.5

Tt

Tj=150ºC

t/T =1/2

D.C.

t /T =1/3

t /T =1/6

Sinewave

0.001

0.01

0.1

1

10

30

0 0.4 0.8 1.2 1.6

Ta=150°C100°C60°C

25°C

Ta=150°C

100°C

60°C

25°C

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Lead Temperature T (°C) Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Average Forward Current IF(AV) (A)

180•100•1.6 tSolder

Copper Foil

T — IF(AV) Characteristics

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 65: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

63

SPX-G32S

50

10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.2 1.4

50

10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.2 1.4

120 125 130 135 140 145 1500

1

2

3

VR=200V4

SPX-62S

1 5 50 10

20ms

50

80

60

40

20

0

40

30

20

10

0

1 5 50 10

20ms

60 80 100 120 140 1600

2

6

4

8

VR=200V10

t /T 1/3=

t /T 1/2=

t /T 1/6=

Sinewave

D.C.

t /T 1/3=

t /T 1/2=

t /T 1/6=

Sinewave

D.C.

150°CT a =

100°C 60°C 25°C

150°CT a =

100°C 60°C 25°C

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

0 1 5 50 10

20ms

5

AG01 series

25 L=10mm L=10mm

P. C. B. 10mm

1

30

0.1

0.01

0.001

AG01Y

AG01Z, AG01

AG01A

20

15

10

AG01Y

AG01Z, AG01, AG01A

0.6 1.0 1.4 1.8 0.2 2.2 2.6 3.0

T a 150°C=

70°C 100°C

25°C

10

0 1 5

30

50 10

25 20ms

20

15

10

5

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

EG01Y, EG01Z, EG01

EG01Y

EG01Z, EG01

L=15mm L=15mm

P. C. B. 10mm 1

0.1

0.01

0.001

10

EG01Y

EG01Z, EG01

0.6 1.0 1.4 1.8 0.2 2.2 2.6

T a 150°C=

60°C 100°C

25°C

150

AL01Z

5

20

15

10

25

0 1 5 50 10

20ms

10

1

0.1

0.01

0.0010

025 50 75 150

0.2

0.4

0.6

0.8

1.0

125100

L=10 mm L=10 mm

P.C.B 10 mm

0.4 0.6 0.8 1.0 0.2 1.2 1.4 1.6

T a 150°C=

60°C 100°C

25°C

180•100•1.6 tSolder

Copper Foil

180•100•1.6 tSolder

Copper Foil

180•100•1.6 tSolder

Copper Foil

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

IFMS RatingVF— IF Characteristics (Typical)Tc— IF (AV) Derating

Case Temperature Tc (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS RatingVF— IF Characteristics (Typical)Tc— IF (AV) Derating

Case Temperature Tc (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 66: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

64

0 25 50 75 100 125 1500

0.1

0.2

0.3

0.4

0.5

EG01A

0 1 5 50 10

20ms

2

4

6

8

10

L=15mm L=15mm

P. C. B. 10 mm

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

T a 25°C=100

10

1

0.1

1000

0.01

0.001

0 25 50 75 100 1250

0.1

0.2

0.3

0.4

0.5

0 1 5 50 10

20ms

2

EG01C

4

6

8

10 L=15mm L=15mm

P.C.B 10mm

1.0 2.0 3.0 4.0 0 5.0 6.0

T a 150°C=

60°C 100°C

25°C

1

10

0.1

0.01

0.001

0 1 5

30

50 10

25

EG 1Y

20ms

20

15

10

5

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

EG 1Y, EG 1Z, EG 1

EG 1Y

EG 1Z, EG 1 EG 1Z, EG 1

L=15mm L=15mm

P. C. B. 10mm

0.8 1.2 1.6 2.0 0.4 2.4 2.8

T a 25°C=1

20

0.1

0.01

0.001

10

EN01Z

1000

1.0

0.5

110 120 130 140 150

tT

T 150°Cj =V 200V=R

DC

t /T 1/6=

t /T 1/3=

Half-cycle sinewave

t /T 1/2=

10

1

0.1

0.01

0.0010 0.2 0.8 1.41.21.00.60.4

50

00

0.5 1.0

1.5

Half-cycle sinewavet /T 1/3=

t /T 1/2=

DC

t /T 1/6=

1.0

0.5

tT

T 150°Cj =

150°CT a =

60°C 100°C

25°C

EL02Z

5

20

15

10

25

0 1 5 50 10

20ms

20

10

1

0.1

0.010

025 50 75 150

0.3

0.6

0.9

1.2

1.5

125100

L=10 mm L=10 mm

P.C.B10 mm

Copper Foil(35µmt)

0.5 1.0 1.5 0 2.0

T a 150°C=

60°C 100°C

25°C

180•100•1.6 tSolder

Copper Foil

180•100•1.6 t

Solder

180•100•1.6 tSolder

Copper Foil

180•100•1.6 tSolder

Copper Foil

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Lead Temperature T (°C)

T — IF(AV) Characteristics

Forw

ard

Pow

er L

oss

PF

(W

)

IF(AV)—PF Characteristics

Average Forward Current IF (AV) (A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 67: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

65

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

EG 1A

0 1 5 50 10

20ms

2

4

6

8

10

0.8 1.2 1.6 2.0 0.4 2.4 2.8

T a 25°C=1

0.1

0.01

0.001

10L=15mm L=15mm

P. C. B. 10mm

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

RG 1C

0 1 5 50 10

20ms

2

4

6

8

10

1

0.1

0.01

0.001

10L=15mm L=15mm

P.C.B 10mm

1.0 2.0 3.0 4.0 0 5.0 6.0

T a 150°C=

60°C 100°C

25°C

0 1 5 50 10

20ms

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

RG10 series

RG10Y50

L=15mm L=15mm

P.C.B

10 mm40

30

20

RG10A

RG10

60

10

0.4 0.8 1.2 1.6 0 2.0 2.4

T a 150°C=

60°C 100°C

25°C

1

20

0.1

0.01

0.001

10

EL 1Z

4

16

12

8

20

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.0010

025 50 75 150

0.3

0.6

0.9

1.2

1.5

125100

50

P.C.B. t 1.6

3.0 t50µCu

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

T a 150°C=

60°C 100°C

25°C

EL 1

4

16

12

8

20

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.0010.80.4 2.01.61.2 0 2.40

025 50 75 150

0.3

0.6

0.9

1.2

1.5

125100

50

P.C.B. t 1.6

3.0 t50µCu

T a 150°C=

60°C 90°C

25°C

180•100•1.6 tSolder

Copper Foil

180•100•1.6 t

SolderCopper Foil

180•100•1.6 tSolder

Copper Foil

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 68: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

66

RG 2Y

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

600 1 5 50 10

20ms

50

40

30

20

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

T a 150°C=

60°C 100°C

25°C

1

20

0.1

0.01

0.001

10

RN 1Z

10

1

0.1

0.01

0.001 0 0.2 0.8 1.41.21.00.60.4

50

DC

t /T 1/6=

t /T 1/3=

Half-cycle sinewave

t /T 1/2=

tT

T 150°Cj =V 200V=R

1000

1.5

0.5

110 120 130 140 150

1.0

t /T 1/6=

Half-cycle sinewavet /T 1/3, =

t /T 1/2=

DC

tT

T 150°Cj =

00

0.5 1.5

2

1

1.0

T a =

60°C 100°C

25°C

RL 10Z

6

24

18

12

30

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.0010

025 5040 75 150

0.4

0.8

1.2

1.6

2.0

125100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

L=15mm L=15mm

P.C.B 10 mm

T a 150°C=

60°C 100°C

25°C

RP 1H

0.1

0.5

0.01

0.0010 1 2 3 4 5 6 70 25 50 75 100 125 150

0

0.02

0.04

0.06

0.08

0.1

RU 1P

0 25 50 75 100 125 1500

0.4

0.3

0.2

0.1

0 1 5 50 10

20ms

1

2

3

4

5

0 1 5 50 10

20ms

2

4

6

8

10

0.001

0.01

0.1

2

1

0 1.0 2.0 3.0 4.0

T a 100°C=

25°C

150°CT a =

100°C 25°C

L=10mm L=10mm

P.C.B 10mm

150°C

180•100•1.6 tSolder

Copper Foil

180•100•1.6 tSolder

Copper Foil

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Lead Temperature T (°C)

T — IF(AV) Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Average Forward Current IF (AV) (A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 69: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

67

0 1 5 50 10

20ms

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

RG 2Z

RG 2

50

1

0.1

0.01

0.001

40

30

20

10

60

10

0 25 50 75 100 125 1500

0.3

0.6

0.9

1.2

1.5

600 1 5 50 10

20ms

50

40

30

20

10

0.6 1.0 1.4 1.8 0.2 2.2 2.6

T a 150°C=

60°C 100°C

25°C

0.8 1.2 1.6 2.0 0.4 2.4 2.8

max min

20

1

0.1

0.01

0.001

10

RG 2A

0 25 50 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

600 1 5 50 10

20ms

50

40

30

20

10

0.2 0.4 0.6 0.8 1.0 1.2

T a 25°C=

10

1

0.1

0.001

1000

100

0.01

0 25 50 75 100 125 1500

0.4

0.8

1.2

1.6

2.0

1 5 50 10

20ms

RL 2Z

RL 2

40

L=10 mm L=10 mm

P.C.B 10 mm

0 25 50 75 100 125 1500

0.4

0.8

1.2

1.6

2.0L=10 mm L=10 mm

P.C.B 10 mm

0.4 0.6 0.8 1.0 0.2 1.2 1.4

T a 150°C=

60°C 100°C

25°C

T a 150°C=

25°C 100°C

1

1020

0.1

0.01

0.001

0.5 1.0 1.5 2.0 0 2.5 3.0

1

1020

0.1

0.01

0.001

30

20

10

0

0 1 5

30

50 10

25 20ms

20

15

10

5

180•100•1.6 tSolder

Copper Foil

180•100•1.6 tSolder

Copper Foil

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 70: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Half-cycle sinewave

68

RN 2Z

t /T 1/6=

t /T 1/3, =

t /T 1/2=

DC

00

1.0 2.0

2.0

1.5

0.5

tT

T 150°Cj =

1.0

0.5 1.5

10

1

0.1

0.01

0.0010 0.2 0.8 1.41.21.00.60.4

50DC

t /T 1/6=

t /T 1/3=

Half-cycle sinewave

t /T 1/2=

1000

2.0

1.0

110 120 130 140 150

tT

T 150°Cj =V 200V=R

1.5

0.5

T a =

60°C 100°C

25°C

0 1 5

30

50 10

25 20ms

20

15

10

5

RL 2A

0 25 50 75 100 125 1500

0.4

0.8

1.2

1.6

2.0L=10 mm L=10mm

P.C.B 10 mm

T a 150°C=

25°C 100°C

0.5 1.0 1.5 2.52.0 0 3.0 3.5

1

1020

0.1

0.01

0.001

0 25 50 75 100 125 1500

1

2

3

4

5

0 1 5

60

50 10

50 20ms

40

30

20

1 5 50 10

20ms

RL 3Z

RL 3

RL 3A

80

0.4 0.6 0.8 1.0 0 0.2 1.2 1.4 1.6

T a 150°C=

25°C 100°C

1

10

50

0.1

0.01

0.001

0.4 0.8 0 1.61.2 2.0

1

10

50

0.1

0.01

0.001

0.5 1.0 1.5 2.0 0 2.5 3.0

1

1020

0.1

0.01

0.001

60

40

20

0

20 • 20 • 1t Cu

5mm 5mm

With Heatsink

Without Heatsink

60

0 25 50 75 100 125 1500

0.5

1.0

1.5

2.0

2.520 • 20 • 1t Cu

5mm 5mm

With Heatsink

60

1 5 50 10

20ms

80

60

40

20

0

10

0 25 50 75 100 125 1500

1

2

3

4

520 • 20 • 1t Cu

5mm 5mm

With HeatsinkWithout Heatsink

60

T a 150°C=

25°C 100°C

T a 150°C=

60°C 100°C

150°C

180•100•1.6 tSolder

Copper Foil

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Lead Temperature T (°C)

T — IF(AV) Characteristics

Forw

ard

Pow

er L

oss

PF

(W

)

IF(AV)—PF Characteristics

Average Forward Current IF (AV) (A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 71: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

69

0 1 5 50 10

20ms

RG 4Y

RG 4Z, RG 4, RG 4A

RG 4C

1

0.1

0.01

0.001

80

60

40

10

0 25 50 75 100 125 1500

0.4

0.8

1.2

1.6

2.0

40

20

0 1 5 50 10

20ms

60

40

30

20

10

0 25 50 75 100 125 1500

600 1 5 50 10

20ms

100

80

60

40

20

20

1

2

3

4

5

With Heatsink

Without Heatsink

20 • 20 • 1t Cu

5mm 5mm

0 25 50 75 100 125 1500

60

1

2

3

4

5

With Heatsink

Without Heatsink

20 • 20 • 1t Cu

5mm 5mm

20 • 20 • 1t Cu

5mm 5mm

RG 4Z, RG 4

RG 4A

70

50

30

10

RG 4Z, RG 4

RG 4A

50

0.8 1.2 1.6 2.0 0.4 2.4 2.8

T a 25°C=

0.1 0.5 0.7 0.9 1.1 1.3 1.5 1.70.3

T a 150°C=

60°C 100°C

25°C

0.6 1.0 1.4 1.8 0.2 2.2

T a 150°C=

100°C 60°C 25°C

1

0.1

0.01

0.001

10

30

1

0.1

0.01

0.001

6

RN 3Z

t /T 1/6=

Half-cycle sinewave

t /T 1/3=

t /T 1/2=

DC

DC

t /T 1/6=

t /T 1/3=

Half-cycle sinewave

t /T 1/2=

10

1

0.1

0.01

0.0010 0.2 0.8 1.41.21.00.60.4

50

00

1 31000

110 120 130 140 150

t

T

T 150°Cj =

tT

T 150°Cj =V 200V=R

1

2

3

2

1

2

3

150°CT a =

60°C 100°C

25°C

RX 3Z

1 5 50 10

20ms

80

60

40

20

0130120100 11090 150140

0

1.0

0.5

2.0

1.5

2.5

3.0

VR=200V

t /T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Lead Temperature T (°C)

T — IF(AV) Characteristics

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Lead Temperature T (°C)

T — IF(AV) Characteristics

Forw

ard

Pow

er L

oss

PF

(W

)

IF(AV)—PF Characteristics

Average Forward Current IF (AV) (A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 72: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

70

RN 4Z

t /T 1/6=

Half-cycle sinewave

t /T 1/3=

t /T 1/2=

DC

DC

t /T 1/6=

t /T 1/3=

Half-cycle sinewave

t /T 1/2=

10

1

0.1

0.01

0.0010 0.2 0.8 1.41.21.00.60.4

50

00

1000

110 120 130 140 150

t

T

T 150°Cj =

tT

T 150°Cj =V 200V=R

1

2

3

4

5

1 2 3

1

2

3

150°CT a =

60°C 100°C

25°C

0 25 50 75 100 125 1500

1

2

3

4

5

1 5 50 10

20ms

RL 4Z

RL 4A

80

60

40

20

0

With Heatsink

Without Heatsink

60 1 5 50 10

20ms

80

60

40

20

00.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

1

10

30

0.1

0.01

0.001

0.5 1.0 1.5 2.00 2.5 3.0

T a 150°C=

25°C 100°C

1

10

50

0.1

0.01

0.001130120110100 150140

0

1.0

0.5

2.0

0.5

2.5

3.0

t /T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

tT

VR=600VTj=150°C

FMC-G28S

10

40

30

20

50

0 1 5 50 10

20ms

0150

2

3

100 110 120 130 140

t /T=1/6

t /T=1/2

D.C.

1

t /T=1/3, Sinewave

03

8

12

0 1 2

t /T=1/6

t /T=1/2

D.C.4

Tj=150°C

Tt

t /T=1/3, Sinewave

FMC-G28SL

0

5

10

15

20

0 1 2 3 4 5

D.C.

Tj=150°C

Tt

t /T=1/6

t /T=1/3, Sinewave

t /T=1/2

0

1

2

3

4

5

50 70 90 110 130 150

t /T=1/6

t /T=1/3

D.C.

t /T=1/2

Sinewave

10

50

40

20

30

60

0 1 5 50 10

20ms

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Lead Temperature T (°C)

T — IF(AV) Characteristics

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Lead Temperature T (°C)

T — IF(AV) Characteristics

Forw

ard

Pow

er L

oss

PF

(W

)

IF(AV)—PF Characteristics

Average Forward Current IF (AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Average Forward Current IF (AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Average Forward Current IF (AV) (A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 73: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

71

FMG-G26S

10

20

50

40

30

0 1 5 50 10

20ms

FMG-G2CS

5

25

30

20

15

10

0 1 5 50 10

20ms

90 110 130500

70 150

1

2

3

4

5

25 50 100 12500

75 150

0.6

1.2

1.8

2.4

3.0

10

1

0.1

0.01

0.001

30

10

1

0.1

0.01

0.001

50

t /T 1/2=

t /T 1/6=

D.C.

t /T 1/3, Sinewave=

0.4 0.8 1.2 1.6 0 2.0 2.4 2.8

T a 150°C=

60°C 25°C

100°C

1 2 3 4 0 5

T a 150°C=

60°C 25°C

100°C

FML-G12S

10

50

60

40

30

20

65

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.001100

0110 120 150

1

2

3

4

5

140

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130 0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

20

10

60

40

50

30

70

0 1 5 50 10

20ms

FML-G13S, G14S

10

30

20

50

40

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.0010.5 1.0 0 1.5 2.0

50

10

1

0.1

0.01

0.001

FML-G16S

700

90 110 150

1

2

3

4

5

130

t /T 1/6=

Sinewave

t /T 1/2=

D.C.

900

100 150

1

2

3

4

5

140

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130110 120 0.4 0.8 1.2 1.6 0 2.0 2.4

T a 150°C=

60°C 100°C

25°C

T a 150°C=

100°C 60°C 25°C

t/T 1/3=

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Ambient Temperature Ta (°C)

Ta— IF (AV) Derating

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 74: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

72

20

60

40

100

80

0 1 5 50 10

20ms

FMN-G12S

50

10

1

0.1

0.01

0.0010.2 0.4 0.6 0.8 0 1.0 1.2 1.4

T a 150°C=

100°C 60°C 25°C

0150

1

2

3

4

5

100 110 120 130 140

t /T 1/6=

Sinewave

t /T 1/2=

D.C.

t /T 1/3=

Tj=125°CVR=200V

Tt

FMP-G12S

10

50

60

40

30

20

65

0 1 5 50 10

20ms

50

10

1

0.1

0.01

0.0011.0 1.61.41.2 0 0.6 0.80.4100

0110 120 130 150

1

2

3

4

5

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

140

T a 150°C=

60°C 100°C

25°C

FMX-G12S

10

50

60

40

30

20

65

0 1 5 50 10

20ms

50

10

1

0.1

0.01

0.001120 140

t /T 1/3=

t /T 1/2=

0110 150

1

2

3

4

5

130

t /T 1/6=

Sinewave

D.C.

0.2 0.4 0.6 0.8 0 1.0 1.2 1.4

T a 150°C=

100°C 60°C 25°C

FML-G22S

30

90

60

150

120

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.00180

090 110 150

2

4

6

8

10

130

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

100 120 140 0.8 1.0 1.2 0 0.4 0.60.2

T a 150°C=

60°C 100°C

25°C

FMX-G22S

30

90

60

150

120

0 1 5 50 10

20ms

0.2 0.4 0.6 0.8 0 1.0 1.2 1.4

50

10

1

0.1

0.01

0.001

T a 150°C=

100°C 60°C 25°C

500

150

2

4

6

8

10

70 90 110 130

t /T 1/6=

Sinewave

t /T 1/2=

D.C.

t /T 1/3=

Tj=150°CVR=200V

Tt

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 75: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

73

FMG-12S/R, 13S/R

10

15

5

30

20

25

35

0 1 5 50 10

20ms

500

70 90 110 150

1

2

3

4

5

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130

10

1

0.1

0.01

0.002

50

1.0 2.00 3.0 4.0

Tj 150°C=

60°C 100°C

25°C

FMC-26U, 26UA

10

40

30

20

50

0 1 5 50 10

20ms

0150

2

3

0 50 100

t /T=1/6

t /T=1/2

D.C.

1

Tj=150°C

Tt

t /T=1/3, Sinewave

03

10

15

0 1 2

t /T=1/6

t /T=1/2

D.C.5

Tj=150°C

Tt

t /T=1/3, Sinewave

FMC-28U, 28UA

10

40

30

20

50

0 1 5 50 10

20ms

0150

2

3

50 70 90 110 130

t /T=1/6

t /T=1/2

D.C.

1

Tj=150°C

Tt

t /T=1/3, Sinewave

03

10

15

20

25

0 1 2

t /T=1/6

t /T=1/2

D.C.5

Tj=150°C

Tt

t /T=1/3, Sinewave

FMG-G36S

10

20

60

50

40

30

80

70

0 1 5 50 10

20ms

FMG-G3CS

10

50

60

40

30

20

0 1 5 50 10

20ms

90 110 130500

70 150

2

4

6

8

10

25 50 100 12500

75 150

1

2

3

4

5

T a 150°C=

25°C 100°C

0.4 0.8 1.2 1.6

10

1

0.1

0.01

0.001

20

0 2.0 2.4

t /T 1/2=

t /T 1/6=

D.C.

t /T 1/3, Sinewave=

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Average Forward Current IF (AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Average Forward Current IF (AV) (A)

Ambient Temperature Ta (°C)

Ta— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 76: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

74

FMG-14S/R

10

15

5

30

20

25

35

0 1 5 50 10

20ms

500

70 90 110 150

1

2

3

4

5

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130

10

1

0.1

0.01

0.002

50

1.0 2.00 3.0 4.0

Tj 150°C=

60°C 100°C

25°C

FMG-22S/R, 23S/R

FMG-24S/R

10

50

60

40

30

20

65

0 1 5 50 10

20ms

10

50

60

40

30

20

65

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.0010.6 1.0 1.4 1.8

30

10

1

0.1

0.01

0.001

0.2 2.2

T a 150°C=

60°C 25°C

100°C

0.5 1.0 1.5 2.0 0 2.5

500

70 90 110 150

2

4

6

8

10

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130

500

70 90 110 150

2

4

6

8

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130

T a 150°C=

60°C 27°C

100°C

FMG-26S/R

10

40

30

20

50

0 1 5 50 10

20ms

10

1

0.1

0.01

0.0010.5 1.0 1.5 2.0 0 2.550

070 90 110 150

1

2

3

4

6

5t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130

T a 150°C=

100°C 60°C 25°C

FML-12S

5

25

30

20

15

10

35

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.0010.5 1.0 1.5 0

T a 150°C=

24°C

1000

110 120 130 150

1.0

2.0

3.0

4.0

5.0

140

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C. I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 77: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

75

FML-13S

FML-14S

5

30

35

25

15

20

10

40

0 1 5 50 10

20ms

700

90 110 150

1.0

2.0

3.0

5.0

4.0

130

30

10

1

0.1

0.01

0.001

5

30

35

25

15

20

10

40

0 1 5 50 10

20ms

0.6 1.0 1.4 1.8 0.2 2.2

T a 150°C=

60°C 100°C

25°C

30

10

1

0.1

0.01

0.0010.6 1.0 1.4 1.8 0.2 2.2

T a 150°C=

60°C 100°C

25°C

D.C.

t /T 1/2=

t /T 1/3, Sinewave=

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

t /T 1/6=

0100 130 150

1.0

2.0

3.0

4.0

5.0

140110 120

FML-23S

FML-24S

10

50

60

40

30

20

70

0 1 5 50 10

20ms

10

50

60

40

30

20

70

0 1 5 50 10

20ms

30

10

1

0.1

0.01

0.001

700

90 110 150

2

4

6

10

8

130

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

700

90 110 150

2

4

6

8

10

130

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

0.3 0.5 0.7 0.9 0.1 1.1 1.3 1.5

T a 150°C=

60°C 100°C

25°C

30

10

1

0.1

0.01

0.0010.3 0.5 0.7 0.9 0.1 1.1 1.3 1.5

T a 150°C=

60°C 100°C

25°C

FML-22S

10

50

60

40

30

20

65

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.00160

080 100 120 160

2

4

6

8

10

140

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 78: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

76

FMG-32S/R, 33S/R

30

120

90

60

150

0 1 5 50 10

20ms

FMG-34S/R

20

80

60

40

100

0 1 5 50 10

20ms

0.4 0.8 1.2 1.6

10

1

0.1

0.01

0.001

50

0 2.0 2.4

0.4 0.8 1.2 1.6

10

1

0.1

0.01

0.001

30

0 2.0 2.4

T a 150°C=

60°C 25°C

100°C

500

70 90 110 150

4

8

12

16

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130

500

70 90 110 150

4

8

12

16

20

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130

T a 130°C=

60°C 28°C

100°C

FMX-12S

5

10

25

20

15

35

30

0 1 5 50 10

20ms

FMX-22S

FMX-22SL

10

50

60

40

30

20

65

0 1 5 50 10

20ms

20

80

60

40

100

0 1 5 50 10

20ms

0.2 0.4 0.6 0.8 0 1.0 1.2

T a 150°C=

100°C 60°C 25°C

0.2 0.4 0.6 0.8 0 1.0 1.2

T a 150°C=

100°C 60°C 25°C

0.2 0.4 0.6 0.8 0 1.0 1.2

T a 150°C=

60°C 100°C

25°C

30

10

1

0.1

0.01

0.001

50

10

1

0.1

0.01

0.001

50

10

1

0.1

0.01

0.001

80 100 120 140

t /T 1/3=

t /T 1/2=

700

90 110 150

1

2

3

4

5

130

t /T 1/6=

Sinewave

D.C.

80 100 120 140

t /T 1/3=

t /T 1/2=

700

90 110 150

2

4

6

8

10

130

t /T 1/6=

Sinewave

D.C.

40 80 120 140

t /T 1/3=

t /T 1/2=

200

60 100 160

5

10

15

20

t /T 1/6=

Sinewave

D.C.

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 79: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

77

10

20

60

50

40

30

80

70

0 1 5 50 10

20ms

T a 150°C=

25°C 100°C

0.4 0.8 1.2 1.6

10

1

0.1

0.01

0.001

20

0 2.0 2.4

FMG-36S/R

500

70 90 110 150

3

6

9

12

15

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

130

FML-32S

FML-33S, 34S

20

80

60

40

100

0 1 5 50 10

20ms

30

120

90

60

150

0 1 5 50 10

20ms

50

10

1

0.1

0.01

0.001

50

10

1

0.1

0.01

0.001

0.4 0.6 0.8 1.0 0 0.2 1.2 1.4

800

100 120 150

4

8

12

16

20

130

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

90 110 140

600

80 100 120 160

5

10

15

20

25

140

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

0.4 0.8 1.2 1.6 0

T a 150°C=

60°C 100°C

25°C

T a 150°C=

60°C 100°C

24°C

FML-36S

20

80

60

40

100

0 1 5 50 10

20ms

50

10

1

0.1

0.01

0.0010

040 80 160

4

8

12

16

20

120

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

14020 60 100 0.4 0.8 1.2 1.6 0 2.0

T a 150°C=

60°C 100°C

25°C

FMX-32S

30

120

90

60

150

0 1 5 50 10

20ms

0.2 0.4 0.6 0.8 0 1.0 1.2

T a 150°C=

100°C 60°C 25°C

1

0.1

0.01

0.001

10

50

70 100 120 140

t /T 1/3=

t /T 1/2=

600

90 110 150

4

8

12

16

20

130

t /T 1/6=

Sinewave

D.C.

80

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Case Temperature Tc (°C)

Tc— IF (AV) Derating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 80: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

0 25 50 75 100 125 1500

1.0

2.0

3.0

4.0

40

0 25 50 75 100 125 1500

1.0

2.0

3.0

6.0

4.0

5.0

40

RBV-402L

0 1 5 50 10

40

20ms

80

20

60

RBV-602L

0 1 5 50 10

40

20ms

100

80

20

60

0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

150°CT a =

60°C 100°C

25°C

2010

1

0.1

0.01

0.001

30

10

1

0.1

0.01

0.001

78

IFS

M (A

)I F

SM

(A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ambient Temperature Ta (°C)

IFMS RatingVF— IF Characteristics (Typical)Ta— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Characteristic Curves

Ultra-Fast-Recovery Rectifier Diodes

Page 81: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

79

0 5 10 15 20 25 300.00050.001

0.01

0.1

1

10

50

0.00.001

0.01

0.1

1

10

0.2 0.4 0.6 0.8 1.0

150°C125°C100°C60°C25°C

150°C

125°C

100°C

60°C

25°C

00.0

0.2

0.4

0.6

0.8

1.0

50 100 150Tt

Tj=150°C

t/T=1/6

VR=30V

t/T=1/3D.C.

Sinewave

t/T=1/2

SSB-14

MI1A3

1

3

2

4

0 1 5 50 10

20ms

5

10

25

20

15

30

0 1 5 50 10

20ms

0 25 50 75 100 1250

0.1

0.2

0.3

0.4

0.5

SFPB-54

0 25 5040 75 100 1250

0.2

0.4

0.6

0.8

1.0

t 1.6 P.C.BSolder Land

= 3.0 35µmCu

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

5

1

0.1

0.01

0.001

2010

1

0.1

0.01

0.001

0 20 40 5010 30

5

1

0.1

0.01

0.00050.001

30

10

1

0.1

0.01

0.001

1–t /T=1/2

1–t /T=2/3

1–t /T=5/6

D.C.

Sinewave

Tj=125°CVR=40V

Tt

100°C

T a 125°C=

60°C

25°C

0.2 0.4 0.6 0.8 0 1.0 1.2 10 30 6020 40 50

T a 125°C=

100°C

60°C

25°C

SFPB-56

2

6

4

10

8

0 1 5 50 10

20ms

0 25 5040 75 100 1250

0.2

0.4

0.6

0.8

1.0

t 1.6 P.C.BSolder Land

= 3.0 35µmCu

2010

1

0.1

0.01

0.001

2010

1

0.1

0.01

0.00050.001

0.2 0.4 0.6 0.8 0 1.0 1.2 10 5030 70 90

100°C

T a 125°C=

60°C

25°C

0 1 5 50 10

20ms

2

8

6

4

10

SFPB-59

2010

1

0.1

0.01

0.001

4

1

0.1

0.01

0.00050.001

0.2 0.4 0.6 0.8 0 1.0 1.2

Ta=125°C 100°C 60°C 25°C

10 5030 70 90 110

100°C

T a 125°C=

60°C

25°C

0 25 5040 75 100 1250

0.2

0.4

0.6

0.8

1.0

t 1.6 P.C.BSolder Land

= 3.0 35µmCu

Ta=125°C 100°C 60°C 25°C

Ta=125°C 100°C 60°C 25°C

Ta=125°C 100°C 60°C 26°C

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

T — IF(AV) Characteristics

Lead Temperature T (°C)

Characteristic Curves

Schottky Barrier Diodes

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80

0 1 5 50 10

20ms

10

20

50

40

30

60

SFPB-64

0 25 5040 75 100 1250

0.3

0.6

0.9

1.2

1.5

t 1.6 P.C.BSolder Land

= 3.0 35µmCu

2010

1

0.1

0.01

0.001

30

10

1

0.1

0.01

0.0010.2 0.4 0.6 0.8 0 1.0 1.2

T a 125°C=

100°C 60°C 25°C

10 30 6020 40 50

100°C

T a 125°C=

60°C

25°C

10

20

50

40

30

60

0 1 5 50 10

20ms

SFPB-74

0 25 50 75 100 1250

0.4

0.8

1.2

1.6

2.0

t 1.6 P.C.BSolder Land

= 5.0 35µmCu

2010

1

0.1

0.01

0.001

200100

10

1

0.1

0.01

0.0030.2 0.4 0.6 0.8 0 1.0 1.2

T a 125°C=

100°C 60°C 25°C

10 30 6020 40 50

100°C

T a 125°C=

60°C

25°C

SFPB-66

tT

VR=60VTj=125°C

0 50 75 100 1250

0.5

1.0

1.5

2.0 50

10

1

0.1

0.01

0.001

2010

1

0.001

0.01

0.1

0.2 1.0 1.4 1.61.2 0 0.4 0.6 0.8 10 50 60 70 80 0 20 30 40

t /T 1/6=

t /T 1/2=

D.C.

t /T 1/3=

Sinewave

T a 125°C=

100°C 60°C 25°C

125°C

100°C

60°C

25°C 5

10

25

20

15

0 1 5 50 10

20ms

10

30

20

40

0 1 5 50 10

20ms

SFPB-76

0 25 5045 75 100 1501250

0.4

0.8

1.2

1.6

2.0

t 1.6 P.C.BSolder Land

= 10 35µmCu

30

10

1

0.1

0.01

0.001

50

10

1

0.1

0.01

0.0010.2 0.4 0.6 0.8 0 1.0

T a 125°C=

100°C 60°C 25°C

0 4020 60 80

100°C

T a 125°C=

60°C

25°C

SFPB-69

50 75 100 1250

0.3

0.6

0.9

1.5

1.2

50

10

1

0.1

0.01

0.001

10

1

0.001

0.01

0.1

0.2 1.0 1.4 1.61.2 0 0.4 0.6 0.8 10 50 60 70 80 90 100 0 20 30 40

t /T 1/6=

t /T 1/2=

D.C.

t /T 1/3=

Sinewave

T a 125°C=

100°C 60°C 25°C

125°C

100°C

60°C

25°C

tT

VR=90VTj=125°C

10

20

40

30

0 1 5 50 10

20ms

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingT — IF(AV) Characteristics

Lead Temperature T (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingT — IF(AV) Characteristics

Lead Temperature T (°C)

Characteristic Curves

Schottky Barrier Diodes

Page 83: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

81

10

20

50

40

30

0 1 5 50 10

20ms

SPB-G34S

10095 105 110 115 120 1250

1.0

0.5

2.0

1.5

2.5

3.0VR=40V

D.C.

t /T 1/6=

t /T 1/3=

t /T 1/2=

Sinewave

30

10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.2

T a 125°C=

60°C 100°C

28°C

100

10

1

0.1

0.010.005

0 10 30 50 6020 40

100°C

T a 125°C=

60°C

28°C

SPB-64S

10

20

50

40

30

0 1 5 50 10

20ms

30

10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.2

100

10

1

0.1

0.01

0.0010 10 30 50 6020 408070 90 100 110 120 130

0

1.0

2.0

3.0

4.0

5.0

6.0VR=40V

D.C.t /T 1/6=

t /T 1/3=

t /T 1/2=

Sinewave

T a 125°C=

60°C 100°C

27°C

100°C

T a 125°C=

60°C

27°C

10

20

50

40

30

60

0 1 5 50 10

20ms

SPB-G54S

8070 90 100 110 120 1300

1.0

2.0

3.0

4.0

5.0VR=40V

30

10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.2

D.C.

t /T 1/6=

t /T 1/3=

t /T 1/2=

Sinewave

T a 125°C=

60°C 100°C

28°C

500100

10

1

0.1

0.010.005

0 10 30 50 6020 40

100°C

T a 125°C=

60°C

28°C

SPB-G56S

10

20

30

50

40

60

0 1 5 50 10

20ms

0 0.2 0.4 0.6 1.00.8

2010

1

0.1

0.01

0.0018070 90 100 110 120 130

0

2.0

1.0

3.0

4.0

6.0

5.0

VR=60V

D.C.

t /T 1/6=

t /T 1/3=

t /T 1/2=

Sinewave

T a 125°C=

60°C 100°C

23°C

0 20 30 50 60 7010 40

100°C

T a 125°C=

60°C

23°C

50

10

1

0.1

0.01

0.001

SPB-66S

0 1 2 3 4 65100 110 120 130 140 1500

1

2

3

4

6

5

0

1

2

3

4

6

5

0 10 20 30 40 50 600

1

2

3

4

8

5

6

7

0 50 100 1500

1

2

3

4

6

5

D.C.

Sinewavet /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

1– t /T=1/2

1– t /T=2/3

1– t / T=5/6

Tj=150°C

Tt

t /T=1/2

t /T=1/2

t /T=1/3, Sinewave

t /T=1/3

t /T=1/6

t /T=1/6D.C.

Tj=150°C

Tt

VR=0V VR=60V

Tj=150°C

Tt

Sinewave

Tj=150°C

Tt

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Reverse Voltage VR (V)

Rev

erse

Pow

er L

oss

PR

(W)

VR—PR Characteristics

Characteristic Curves

Schottky Barrier Diodes

Page 84: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

82

MPE-24H

100 110 120 130 140 1500

5

10

15

t /T 5/6=

t /T 1/2=

D.C.

t /T 1/3=

Sinewave

tT

VR=40VTj=150°C

20

40

100

80

60

0 1 5 50 10

20ms

Ta=155°C125°C100°C60°C25°C

0 0.5 1.0 1.50.001

1

0.1

0.01

10

100

0 5 10 15 200

10

5

15

20

25

=t /T 1/6

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Tt

Tj=150ºC

0 50 100 1500

5

10

15

VR=90V20

Tt

Tj=150ºC

t/T=1/6

t /T=1/3

D.C.

t /T=1/2

Sinewave

Ta=150°C

125°C

100°C

60°C

25°C

0 40 6020 80 1000.00050.001

1

0.1

0.01

10

50

AK 03, 04

MPE-29G

5

10

25

20

15

0 1 5 50 10

20ms

0 25 50 75 100 1501250

0.2

0.4

0.6

0.8

1.0 2010

1

0.1

0.01

0.001

10

50

1

0.001

0.1

0.01

0.2 1.0 1.2 0 0.4 0.6 0.8 10 50 60 0 20 30 40

50

P.C.B. t 1.63.0 t50µCu

T a 125°C=

100°C 60°C 27°C

125°C

100°C

60°C

27°C

AK 06

2

4

10

8

6

0 1 5 50 10

20ms

0 25 40 50 75 100 1501250

0.2

0.4

0.6

0.8

1.0 10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.41.2

10

1

0.1

0.01

0.0010 30402010 30 60 70 80

T a 125°C=

65°C 100°C

26°C

100°C

T a 125°C=

60°C

26°C

AK 09

2

4

10

8

6

0 1 5 50 10

20ms

0 25 35 50 75 100 1501250

0.2

0.4

0.6

0.8

1.0 10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.2

T a 125°C=

60°C 100°C

26°C

3

1

0.1

0.01

0.001

0.00010 40 100 12020 60 80

100°C

T a 125°C=

60°C

26°C

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Characteristic Curves

Schottky Barrier Diodes

Page 85: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

83

10

20

40

30

0 1 5 50 10

20ms

EK 03, 04

0 25 50 75 100 1501250

0.2

0.4

0.6

0.8

1.0 10

1

0.1

0.01

10

100

1

0.10.2 1.0 1.2 0 0.4 0.6 0.8 10 50 60 0 20 30 40

T a 125°C=

25°C

T a 125°C=

T a 25°C=

10

1

0.1

0.01

100

10

1

0.1

EK 13, 14

10

20

40

30

0 1 5 50 10

20ms

0 25 50 75 100 1501250

0.3

0.6

0.9

1.2

1.5

0.2 1.0 1.2 0 0.4 0.6 0.8

T a 125°C=

25°C

10 50 60 0 20 30 40

T a 125°C=

T a 25°C=

2

4

10

8

6

0 1 5 50 10

20ms

EK 06

0 25 5040 75 100 1501250

0.2

0.4

0.6

0.8

1.0 10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.41.2

10

1

0.1

0.01

0.0010 30402010 30 60 70 80

T a 125°C=

65°C 100°C

26°C

100°C

T a 125°C=

60°C

26°C

0 0.2 0.4 0.6 0.8 1.0 1.41.2

50

10

1

0.1

0.01

0.001

EK 16

5

10

20

15

25

0 1 5 50 10

20ms

0 25 5040 75 100 1501250

0.3

0.6

0.9

1.2

1.5

0 40 10020 60 80

30

10

1

0.1

0.01

0.001

T a 125°C=

60°C 100°C

27°C

100°C

T a 125°C=

60°C

27°C

2

4

10

8

6

0 1 5 50 10

20ms

EK 09

0 25 50 75 100 1501250

0.2

0.4

0.6

0.8

1.0 10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.2

T a 125°C=

60°C 100°C

26°C

3

1

0.1

0.01

0.001

0.00010 40 100 12020 60 80

100°C

T a 125°C=

60°C

26°C

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Characteristic Curves

Schottky Barrier Diodes

Page 86: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

84

0 0.2 0.4 0.6 0.8 1.0 1.2

2010

1

0.1

0.01

0.001

EK 19

0 25 5030 75 100 1501250

0.3

0.6

0.9

1.2

1.5

10

20

40

30

0 1 5 50 10

20ms

T a 125°C=

60°C 100°C

26°C

0 40 100 12020 60 80

100°C

T a 125°C=

60°C

26°C

10

1

0.1

0.01

0.001

RK 13, 14

10

1

0.1

0.01

100

10

1

0.01

0.1

20

10

40

50

30

60

0 1 5 50 10

20ms

0 25 5040 75 100 1501250

0.4

0.8

1.2

1.61.7

2.0

0.2 1.0 1.2 0 0.4 0.6 0.8 10 50 60 0 20 30 40

T a 125°C=

T a 25°C=T a 125°C=

25°C

RK 33, 34

10

20

40

30

50

0 1 5 50 10

20ms

0 25 50 75 100 1501250

0.5

1.0

1.5

2.0

2.5 50

10

1

0.1

0.01

0.001

100

10

1

0.001

0.01

0.1

0.2 1.0 1.2 0 0.4 0.6 0.8 10 50 60 0 20 30 40

L=15mm L=15mm

P.C.B 10mm

T a 125°C=

100°C 60°C 27°C

125°C

100°C

60°C

27°C

RK 16

5

10

20

15

25

0 1 5 50 10

20ms

0 25 5040 75 100 1501250

0.3

0.6

0.9

1.2

1.5

0 0.2 0.4 0.6 0.8 1.0 1.41.2

50

10

1

0.1

0.01

0.0010 40 10020 60 80

30

10

1

0.1

0.01

0.001

T a 125°C=

60°C 100°C

27°C

100°C

T a 125°C=

60°C

27°C

RK 19

0 25 50 75 100 1501250

0.3

0.6

0.9

1.2

1.5

10

20

40

30

0 1 5 50 10

20ms

0 0.2 0.4 0.6 0.8 1.0 1.2

2010

1

0.1

0.01

0.001

T a 125°C=

60°C 100°C

26°C

0 40 100 12020 60 80

100°C

T a 125°C=

60°C

26°C

10

1

0.1

0.01

0.001

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

180•100•1.6 tSolder

Copper Foil

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Characteristic Curves

Schottky Barrier Diodes

Page 87: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

85

20

60

40

80

0 1 5 50 10

20ms

RK 43, 44

0 25 50 75 100 1250

0.6

1.2

1.8

2.4

3.0VR=40V

50

10

1

0.1

0.01

0.001

50

10

1

0.001

0.01

0.1

0.2 1.0 1.41.2 0 0.4 0.6 0.8 10 50 60 0 20 30 40

t /T 1/6=

t /T 1/2=

D.C.

t /T 1/3=

Sinewave

Tt

T a 125°C=

100°C 60°C 25°C

125°C

100°C

60°C

25°C

RK 36

0 25 30 50 75 100 1501250

0.4

0.8

1.6

1.2

2.0

10

20

40

30

0 1 5 50 10

20ms

0 0.5 1.0 1.5

50

10

1

0.1

0.01

0.0010 4020 60 80

50

10

1

0.1

0.01

0.001

T a 125°C=

60°C 100°C

R.T

100°C

T a 125°C=

60°C

R. T

L=15mm L=15mm

P.C.B.180•180•1.6 t

Solder 10•10mm35µmt Cu

10

20

70

60

30

40

50

0 1 5 50 10

20ms

RK 46

80 90 100 110 120 1300

1

2

3

4

5VR=60V

0 0.2 0.4 0.6 0.8 1.21.0

50

10

1

0.1

0.01

0.0010 4020 60 80

50

10

1

0.1

0.01

0.001

D.C.

t /T 1/2=

t /T 1/6=

t /T 1/3=

Sinewave

T a 125°C= 100°C 60°C 26°C

100°C

T a 125°C=

60°C

26°C

RK 39

0 25 5035 75 100 1501250

0.4

0.8

1.2

1.6

2.0

10

20

40

30

50

0 1 5 50 10

20ms

0 0.2 0.4 0.6 0.8 1.21.0 1.4

50

10

1

0.1

0.01

0.001

T a 125°C=

60°C 100°C

26°C

0 40 100 12020 60 80

100°C

T a 125°C=

60°C

26°C

50

10

1

0.1

0.01

0.001

10

20

60

30

40

50

0 1 5 50 10

20ms

RK 49

60 80 100 120 140 1600

1

2

3

4

5VR=90V

0 0.2 0.4 0.6 0.8 1.21.0

50

10

1

0.1

0.01

0.0010 40 100 12020 60 80

50

10

1

0.1

0.01

0.001

T a 125°C= 100°C 60°C 28°C

100°C

T a 125°C=

60°C

28°C

D.C.

t /T 1/2=

t /T 1/6=

t /T 1/3=

Sinewave

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingT — IF(AV) Characteristics

Lead Temperature T (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingT — IF(AV) Characteristics

Lead Temperature T (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingT — IF(AV) Characteristics

Lead Temperature T (°C)

Characteristic Curves

Schottky Barrier Diodes

Page 88: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

86

FMB-G14

10

20

30

60

50

40

0 1 5 50 10

20ms

50

10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.41.2

50

10

1

0.1

0.01

0.0010 20 40 50 6010 3080

0130

1

2

3

110 12010090

t /T 1/6=

t /T 1/3=

t /T 1/2=

D.C.

Sinewave

T a 125°C=

60°C 100°C

27°C

27°C

100°C

T a 125°C=

60°C

FMB-G14L

10

1

0.1

0.01

0.0010 0.1 0.2 0.3 0.4 0.5 0.70.6

200100

10

1

0.1

0.010 2010 40 50 6030

10

20

30

60

50

40

0 1 5 50 10

20ms

800

90 100 130

1

2

3

4

5

120

t /T 1/6=

t /T 1/3=

t /T 1/2=

D.C.

110

Sinewave

T a 125°C=

60°C 100°C

27°C

100°C

T a 125°C=

60°C

27°C

30

60

150

120

90

0 1 5 50 10

20ms

FMB-G24H

2010

1

0.1

0.01

0.0010 0.1 0.2 0.3 0.4 0.5 0.70.6 0 2010 40 50 6030

200100

10

1

0.1

0.0160

070 100 130

2

4

6

8

10

110

t /T 1/6=

t /T 1/2=

D.C.

t /T 1/3=

Sinewave

50 80 90 120

T a 125°C=

60°C 100°C

27°C

100°C

T a 125°C=

60°C

27°C

FMB-G16L

10

20

50

40

30

0 1 5 50 10

20ms

600

80 140

1

2

3

5

4

6

120100

t /T 1/6=

t /T 1/3=

t /T 1/2=

D.C.

Sinewave

50

10

1

0.1

0.010 0.2 0.4 0.6 0.8 1.0 1.41.2 0 2010 40 50 8060 7030

50

10

1

0.1

0.0050.01

T a 125°C=

60°C 100°C

26°C

100°C

T a 125°C=

60°C

25°C

VR=60V

FMB-G19L

50

10

1

0.1

0.010 0.5 1.0 1.5

50

10

1

0.1

0.01

0.0010 20 40 100806080

090 130

1

2

3

4

120100 110

t /T 1/6=

t /T 1/3=

t /T 1/2=

D.C.

Sinewave

T a 125°C=

60°C 100°C

27°C

25°C

100°C

T a 125°C=

60°C

10

20

30

40

60

50

0 1 5 50 10

20ms

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Characteristic Curves

Schottky Barrier Diodes

Page 89: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

87

FMB-24

10

20

50

40

30

0 1 5 50 10

20ms

20

10

1

0.1

0.010 0.5 1.0 1.5

2010

1

0.1

0.01

0.0010 20 40 50 6010 30

080 110 130

1

2

3

4

5

12090 100

t /T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

T a 125°C=

100°C 25°C

100°C

T a 125°C=

60°C

26°C 60°C

FMB-24L

10

20

60

30

40

50

0 1 5 50 10

20ms

50

10

1

0.1

0.010 0.5 1.0 1.5

50

10

1

0.1

0.01

0.0040 20 40 50 6010 30

T a 125°C=

60°C 100°C

26°C

25°C

100°C

T a 125°C=

60°Ct/T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

080 110 130

2

4

6

8

10

12090 100

FMB-24H

20

40

100

80

60

0 1 5 50 10

20ms

50

10

1

0.1

0.010 0.5 1.0 1.5

100

10

1

0.1

0.01

0.0010 20 40 50 6010 30

T a 125°C=

60°C 100°C

25°C

25°C

100°C

T a 125°C=

60°C

400

60 80 140

3

6

9

12

15

120

t /T 1/6=

t /T 1/3=

t /T 1/2=

D.C.

100

Sinewave

FMW-24H

0 5 10 150

5

10

15

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

50 70 90 110 130 1500

5

10

15

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

VR=0V

25 50 75 100 125 1500

5

10

15VR=40V

Tj=150°C

Tt

0 10 20 30 400

5

10

20

15

1– t /T=1/2

1– t /T=2/3

1– t / T=5/6

Sinewave

Tj=150°C

Tt

D.C.

Sinewave

t /T=1/2

t /T=1/3

t /T=1/6

Tj=150°C

Tt

FMW-24L

50 70 90 110 130 1500

4

2

6

10

8

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

VR=0V

50 75 100 125 1500

4

2

8

6

10VR=40V

Tj=150°C

Tt

D.C.

Sinewave

t /T=1/2

t /T=1/3

t /T=1/6

0 10 20 30 400

5

10

15

1– t /T=1/2

1– t /T=2/3

1– t / T=5/6

Sinewave

Tj=150°C

Tt

0 42 86 100

4

2

8

6

10

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Reverse Voltage VR (V)

Rev

erse

Pow

er L

oss

PR

(W)

VR—PR Characteristics

Reverse Voltage VR (V)

Rev

erse

Pow

er L

oss

PR

(W)

VR—PR Characteristics

Characteristic Curves

Schottky Barrier Diodes

Page 90: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

88

10

20

50

40

30

0 1 5 50 10

20ms

FMB-26

FMB-26L

50

10

1

0.1

0.010 0.2 0.4 0.6 0.8 1.0 1.41.2 0 2010 40 50 8060 7030

50

10

1

0.1

0.0050.01

10

20

30

40

0 1 5 50 10

20ms

080 90 100 130

1

2

3

4

5

120

070 150130

2

4

6

8

10

110

110

50 90

50

10

1

0.1

0.010 0.2 0.4 0.6 0.8 1.0 1.41.2

50

10

1

0.1

0.01

0.0010 20 40 50 80706010 30

T a 125°C=

60°C 100°C

26°C

25°C

100°C

T a 125°C=

60°Ct/T 1/6=

t /T 1/3=

t /T 1/2=

D.C.

Sinewave

t /T 1/6=

t /T 1/2=

D.C.

t /T 1/3=

Sinewave

T a 125°C=

60°C 100°C

26°C

100°C

T a 125°C=

60°C

25°C

VR=60V

VR=60V

FMB-24M

30

10

0.1

1

0.01

0.0010 0 10 20 30 40 50 600.2 0.4 0.6 0.8 1.0 1.2

50

10

1

0.1

0.01

0.001

10

20

60

30

40

50

0 1 5 50 10

20ms

080 110 130

1.2

2.4

3.6

4.8

6.0

12090 100

t /T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

T a 125°C=

60°C 100°C

27°C

27°C

100°C

T a 125°C=

60°C

FMB-2304

0 50 100 1500

20

15

10

5

25

30

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

VR=0V

Tj=150°CT

t

0 50 100 1500

10

5

25

20

15

30VR=40V

D.C.

Sinewave

t /T=1/2

t /T=1/3

t /T=1/6

0 10 20 30 400

15

10

5

20

25

30

35

1– t /T=1/2

1– t /T=2/3

1– t / T=5/6

Sinewave

Tj=150°C

Tt

0 105 20 2515 300

20

5

10

15

30

25

35

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

FMB-2206

0 50 100 1500

5

10

20

15

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

VR=0V

Tj=150°CT

t

0 50 100 1500

10

5

20

15

VR=40V

D.C.

Sinewave

t /T=1/2

t /T=1/3

t /T=1/6

0 10 20 30 6040 500

15

10

5

20

25

30

1– t /T=1/2

1– t /T=2/3

1– t / T=5/6

Sinewave

Tj=150°C

Tt

0 105 20150

20

5

10

15

25

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingTc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Reverse Voltage VR (V)

Rev

erse

Pow

er L

oss

PR

(W)

VR—PR Characteristics

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Reverse Voltage VR (V)

Rev

erse

Pow

er L

oss

PR

(W)

VR—PR Characteristics

Characteristic Curves

Schottky Barrier Diodes

Page 91: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

89

10

20

50

40

30

0 1 5 50 10

20ms

FMB-29

FMB-2306

FMB-29L

50

10

1

0.1

0.010 20 40 1008060

50

10

1

0.1

0.001

0.0110

20

30

40

60

50

0 1 5 50 10

20ms

50

10

1

0.1

0.010 0.5 1.0 1.5

0 0.5 1.0 1.5

10

1

0.1

0.01

0.0010 20 40 1008060

T a 125°C=

60°C 100°C

26°C

25°C

100°C

T a 125°C=

60°C

T a 125°C=

60°C 100°C

26°C

100°C

T a 125°C=

60°C

25°C

VR=90V

060 70 120 130

2

4

6

8

9080 100 110

t /T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

t /T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

080 110 130

1

2

3

4

12090 100

Ta=150°C125°C100°C60°C25°C

0 0.4 0.60.2 0.8 1.21.0 1.40.001

1

0.1

0.01

10

100

0 5 10 15 20 25 300

10

20

30

40

=t /T 1/6

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Tt

Tj=150ºC

0 50 100 1500

10

20

VR=60V30

Tt

Tj=150ºC

=t/T 1/3

Sinewave

t /T 1/2= D.C.

Ta=150°C125°C

100°C

60°C

25°C

0 20 3010 5040 600.001

1

0.1

0.01

10

100

FME-24H

FME-24L

100 110 120 130 140 1500

6

4

2

8

10

t /T 5/6=

t /T 1/2=

D.C.

t /T 1/3=

Sinewave

tT

VR=40VTj=150°C

50

20

40

80

60

0 1 5 10

20ms

20

40

100

80

60

0 1 5 50 10

20ms

100 110 120 130 140 1500

5

10

15

t /T 5/6=

t /T 1/2=

D.C.

t /T 1/3=

Sinewave

tT

VR=40VTj=150°C

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingT — IF(AV) Characteristics

Lead Temperature T (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingT — IF(AV) Characteristics

Lead Temperature T (°C)

Characteristic Curves

Schottky Barrier Diodes

Page 92: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

90

30

60

150

120

90

0 1 5 50 10

20ms

FMB-34

FMJ-23L

FME-230A

FME-220A

60

120

300

240

180

0 1 5 50 10

20ms

FMB-34M

080 110 130

3

6

9

12

15

12090 100

t /T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

t /T 1/3=

t /T 1/2=D.C.

t /T 1/6=

Sinewave

040 100 140

6

12

18

24

30

12060 80

50

10

1

0.1

0.001

0.01

0 0.2 0.4 0.6 0.8 1.0 1.2

100

10

1

0.1

0.010 20 40 8060

T a 125°C=

100°C 28°C

100°C

T a 125°C=

60°C

28°C 60°C

2010

1

0.1

0.001

0.01

0 0.30.20.1 0.50.4 0.6

500

100

10

1

0.1

0.010 20 40 50 706010 30

T a 125°C=

100°C 22°C

100°C

T a 125°C=

60°C

26°C 60°C

0 2 4 6 8 100

2

4

6

8

10

t /T =1/3, Sinewave

t /T =1/2D.C.

t /T =1/6

Tt

Tj=150ºC

Sinewave

D.C.

t /T =1/3

t /T =1/6

50 70 90 110 130 1500

2

4

6

8

VR=30V10

Tt

Tj=150ºC

t/T =1/2

0 0.1 0.2 0.40.3 0.60.50.001

1

0.1

0.01

10

100

Ta=150°C125°C100°C60°C25°C

Ta=150°C125°C100°C60°C25°C

0 0.4 0.8 1.2 1.60.001

1

0.1

0.01

10

100

0 5 10 15 3020 250

5

10

15

35

25

30

20

t /T=1/6

t /T =1/3, Sinewave

t /T =1/2

D.C.

Tt

Tj=150ºC

0 50 100 1500

5

10

20

15

25

VR=100V30

1–t /T=1/3

1–t /T=1/6

Sinewave

1– t /T=1/2

D.C.

Tt

Tj=150ºC

Ta=150°C125°C100°C60°C25°C

0 0.4 0.8 1.2 1.60.001

1

0.1

0.01

10

100

0 5 10 15 200

5

10

15

25

20 t /T=1/6

t /T =1/3, Sinewave

t /T =1/2

D.C.

Tt

Tj=150ºC

0 50 100 1500

4

8

12

16

VR=100V20

Tt

Tj=150ºC

1–t /T=1/3

1–t /T=1/6

Sinewave 1– t /T=1/2

D.C.

Ta=150°C125°C

100°C

60°C

25°C

0 20 806040 1000.0001

0.001

1

0.1

0.01

10

100

I FS

M (A

)I F

SM

(A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Average Forward Current IF(AV) (A)

Forw

ard

Pow

er L

oss

PF

(W)

IF(AV)—PF Characteristics

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Characteristic Curves

Schottky Barrier Diodes

Page 93: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

91

15

30

75

60

45

0 1 5 50 10

20ms

FMB-34S

t /T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

080 110 130

3

6

9

12

15

12090 100

50

10

1

0.1

0.010 0.5 1.0 1.5

50

10

1

0.1

0.01

0.0050 20 40 50 6010 30

T a 125°C=

100°C 25°C

100°C

T a 125°C=

60°C

26°C 60°C

FMB-36

20

40

100

80

60

0 1 5 50 10

20ms

30

60

150

120

90

0 1 5 50 10

20ms

FMB-36M

50

10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.2

50

10

1

0.1

0.01

0.0010 0.2 0.4 0.6 1.00.8

100

10

1

0.1

0.010.005

0 20 40 50 706010 30

500

100

10

1

0.1

0.010 2010 40 50 70603030

050 70 90 130

6

12

18

24

30

110

800

130

3

6

9

12

15VR=60V

VR=60V

12011010090

t /T 1/6=

t /T 1/3=

t /T 1/2=

D.C.

Sinewave

T a 125°C=

60°C 100°C

26°C 26°C

100°C

T a 125°C=

60°C

t/T 1/6=

t /T 1/3=

t /T 1/2=

D.C.

Sinewave

T a 125°C=

60°C 100°C

26°C

100°C

T a 125°C=

60°C

26°C

FMB-39

10

20

30

60

50

40

0 1 5 50 10

20ms

30

60

150

120

90

0 1 5 50 10

20ms

FMB-39M

50

10

1

0.1

0.01

0.0010 0.2 0.4 0.6 0.8 1.0 1.2

50

10

1

0.1

0.010.005

0 40 80 100 1206020

VR=90V

T a 125°C=

60°C 100°C

26°C

26°C

100°C

T a 125°C=

60°C

t/T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

060 120 130

5

10

15

20

8070 90 100 110

60 120 1308070 90 100 110

V 90VR =

t /T 1/3=

t /T 1/2=

D.C.

t /T 1/6=

Sinewave

0

3

6

9

12

15

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Characteristic Curves

Schottky Barrier Diodes

Page 94: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

92

RBV-406B

0 25 5040 75 100 1250

0.8

1.6

2.4

3.2

4.0

0 0.2 0.4 0.6 0.8 1.0 1.2

50

10

1

0.1

0.001

0.01

0 10 30 706020 5040

30

10

1

0.1

0.01

0.001

10

20

40

30

0 1 5 50 10

20ms

T a 125°C=

60°C 100°C

25°C

100°C

T a 125°C=

60°C

25°C

I FS

M (A

)

Ambient Temperature Ta (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Characteristic Curves

Schottky Barrier Diodes

Page 95: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

93

RH 10F, 2D, 2F

0 25 5040 60 75 100 125 1500

0.2

0.4

0.6

0.8

1.0

RH 3F, 3G

0 25 50 75 100 125 1500

2.5

2.0

1.5

1.0

0.5

10

40

30

20

50

60

0 1 5 50 10

20ms

1 5 50 10

20ms

50

40

30

20

10

0

10mm

P. C. B. t1.6Solder Land 10mm

RH 10FR

H 2D

, 2F

0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

0.4 0.6 0.8 1.0

10

1020

0

0.1

0.01

0.001

0

0.1

0.01

0.001

0.2 1.2

T a 150°C=

60°C 100°C

25°C

RH 4F

0 25 50 60 75 100 125 1500

3.0

2.5

2.0

1.5

1.0

0.5

1 5 50 10

20ms

50

40

30

20

10

0

With H

eatsink

Without Heatsink

20 • 20 • 1t Cu

5mm 5mm

0.3 0.5 0.7 0.9 0.1 1.1 1.3

T a 150°C=

60°C 100°C

25°C

1020

0

0.1

0.01

0.001

RP 3F

10

40

30

20

50

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.0010 0.5 1.0 1.5 2.00 25 50 75 100 125 150

0

1.0

0.5

2.5

2.0

1.5

10mm

P. C. B. t1.6Solder Land 10

25°C

100°CTa=150°C

60°C

RS 3FS

10

40

30

20

50

0 1 5 50 10

20ms

50

10

1

0.1

0.01

0.0010 25 50 75 100 125 150

0

0.5

1.0

1.5

2.0

2.510mm

P. C. B. t1.6Solder Land 5.0

0.3 0.5 0.7 0.9 0.1 1.1 1.3 1.5

T a 150°C=

60°C 100°C

25°C

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating VF— IF Characteristics (Typical) IFMS Rating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating VF— IF Characteristics (Typical) IFMS Rating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating VF— IF Characteristics (Typical) IFMS Rating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating VF— IF Characteristics (Typical) IFMS Rating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating VF— IF Characteristics (Typical) IFMS Rating

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Characteristic Curves

Damper Diodes

Page 96: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

94

RU 4D

10

40

30

20

50

0 1 5 50 10

20ms

0 0.5 1.0 1.5 2.52.0

100°CTa=140°C

28°C

30

10

1

0.1

0.001

0.01

RU 4DS

10

40

30

20

50

0 1 5 50 10

20ms

2010

1

0.1

0.01

0.0010 0.5 1.0 1.5 2.0

26°C

100°CTa=150°C

60°C

0 25 5040 60 75 100 125 1500

0.5

1.0

2.0

1.5

20 • 20 • 1t Cu

5mm 5mm

0 25 50 60 75 100 125 1500

0.5

1.5

1.0

3.0

2.5

2.0

20 • 20 • 1t Cu

5mm 5mm

RS 4FS

10

40

30

20

50

0 1 5 50 10

20ms

0 25 50 60 75 100 125 1500

0.5

1.0

2.0

1.5

2.5

3.020 • 20 • 1t Cu

5mm 5mm

10

1

0.1

0.01

0.002

20

0.5 1.00 1.5

Tj 150°C=

60°C 100°C

25°C

t /T=1/2

t /T=1/6

t /T=1/3, Half-cycle sinewave

DC

RG 2A2

RC 3B2

4

16

12

8

20

0 1 5 50 10

20ms

1

4

3

2

5

0 1 5 50 10

20ms

90 100 130120110 140 150

1.0

0.8

0.6

0.4

0.2

0

10

1

0.1

0.01

0.0010 1 2 3 4 5 6 7 8 9

3

1

0.1

0.001

0.01

0 25 5040 75 100 125 1500

0.2

0.1

0.5

0.4

0.3

25°C

100°CTa=150°C

60°C

0.6 1.0 1.4 1.8 0.2 2.2 2.6 3.0

T a 150°C=

60°C 100°C

25°C

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating VF— IF Characteristics (Typical) IFMS Rating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating VF— IF Characteristics (Typical) IFMS Rating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating VF— IF Characteristics (Typical) IFMS Rating

Ambient Temperature Ta (°C) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Ta— IF (AV) Derating VF— IF Characteristics (Typical) IFMS Rating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

VF— IF Characteristics (Typical) IFMS RatingT — IF(AV) Characteristics

Lead Temperature T (°C)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

With H

eatsinkW

ithout HeatsinkW

ith Heatsink

Without Heatsink

With H

eatsink

Without Heatsink

Characteristic Curves

Damper Diodes

Page 97: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

95

FMP-G2FS

FMQ-G2FLS

10

20

50

40

30

0 1 5 50 10

20ms

10

20

50

40

30

0 1 5 50 10

20ms

2010

1

0.1

0.001

0.01

0 0.5 1.0 1.5 2.0

T a 125°C=

60°C 100°C

25°C

00

1 2 3 4

4

8

12

16

20

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

5

Tt

T 150°C=j

700

90 150

1

2

4

3

5

130110

t /T 1/6=

t /T 1/2=

D.C.

t /T 1/3, Sinewave=

0

10

8

6

4

2

015025 50 75 100 125

t /T=1/6

t /T=1/3

t /T=1/2

DC

tT

Tj=150°C

0

30

25

102 4 6 8

20

15

10

0

5

Sinewave

t /T=1/6

t /T=1/3

t /T=1/2

DC

Sinewave

FMQ-G2FS

10

20

50

40

30

0 1 5 50 10

20ms

0160

6

8

4

10

0 40 80 120

t /T=1/6

D.C.

2

t /T=1/3, Sinewave

t /T=1/2

010

30

40

0 2 6 84

t /T=1/6

t /T=1/2

D.C.

10

20

Tj=150°C

Tt

t /T=1/3, Sinewave

FMQ-G1FS

0 40 80 120 1600

2

1

3

5

4t /T=1/2

t /T=1/3

Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

VR=1500V

0 500 150010000

0.6

0.4

0.3

0.2

0.5

0.6

0.7

1– t /T=1/2

1– t /T=2/3

1– t / T=5/6

Sinewave

Tj=150°C

Tt

0 21 53 40

5

10

15

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

FMQ-G2FMS

0 50 100 1500

4

2

6

10

8

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

0 42 106 80

10

5

30

25

20

15

35

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Reverse Voltage VR (V)

Rev

erse

Pow

er L

oss

PR

(W)

VR—PR CharacteristicsIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating IF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)

Characteristic Curves

Damper Diodes

Page 98: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

96

FMP-G5HS

FMU-G2FS

10

20

50

40

30

0 1 5 50 10

20ms

50

10

1

0.1

0.001

0.01

0 1.0 2.0 3.0

T a 125°C=

60°C 100°C

25°C

00

2 4 6

4

8

12

16

20

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

8

Tt

T 150°C=j

900

150

2

4

8

6

130 140120110100

t /T 1/6=

t /T 1/2=

D.C.

t /T 1/3, Sinewave=

FMQ-G5FMS

FMQ-G5GS

10

20

50

40

30

0 1 5 50 10

20ms

10

20

50

40

30

0 1 5 50 10

20ms

50

10

1

0.1

0.001

0.01

0 0.5 1.0 1.5 2.0 3.02.5

T a 125°C=

60°C 100°C

25°C

800

90 100 150

2

8

4

10

6

130 140110 120

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

00

2 4 6 8

5

10

15

20

25

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

10

50

10

1

0.1

0.001

0.01

0 0.5 1.0 1.5 2.0 2.5 3.53.0

T a 125°C=

60°C 100°C

25°C

400

60 80 160140

2

4

8

6

10

120100

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Tt

T 150°C=j

00

2 4 6 8

10

20

30

40

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

10

Tt

T 150°C=j

0 0.4 0.8 1.61.2 2.22.00.001

1

0.1

0.01

10

100

0 400 800 1200 16000.001

1

0.1

0.01

10

0 2 4 6 8 100

5

10

15

20

25

t /T =1/3, Sinewave

t /T =1/2

D.C.

t /T =1/6Tt

Tj=150ºC

0 50 100 1500

2

4

6

8

VR=1500V10

Tt

Tj=150ºC

t/T =1/2

D.C.

t /T =1/3

t /T =1/6

Sinewave

Ta=150°C100°C60°C

R.T

Ta=150°C

100°C

60°C

R. T

FMR-G5HS

10

20

50

40

30

0 1 5 50 10

20ms

50

10

1

0.1

0.001

0.01

0 0.5 1.0 1.0 1.5 2.0

T a 125°C=

60°C 100°C

25°C

00

2 4 6 8

4

8

12

16

20t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

10

Tt

T 150°C=j

1000

110 150

2

4

8

6

10

140130120

t /T 1/6=

t /T 1/2=

D.C.

t /T 1/3, Sinewave=

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Reverse Voltage VR (V)

Rev

erse

Cur

rent

I R

(mA

)

VR—IR Characteristics (Typical)IF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

I FS

M (A

)I F

SM

(A)

I FS

M (A

)I F

SM

(A)

Characteristic Curves

Damper Diodes

Page 99: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

97

FMV-G5FS

10

20

50

40

30

0 1 5 50 10

20ms

0.2 0.4

50

10

0.1

1

0.01

1.61.2 1.40.6 0.8 1.00.002

00

2 4 6 8

5

15

10

20

25

30

10

Tt

T 150°C=j

=t /T 1/6

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

900

110100 130120 140 150

2

4

6

8

10

t /T 1/6=

t /T 1/3, Sinewave=

t /T 1/2=

D.C.

Tj=150°C

60°C 25°C

100°C

Half-cycle sinewave

t /T 1/3=

t /T 1/2=

DC

t /T 1/6=

tT

1

50

10

0.1

0.01

0.0010 0.5 1.0 1.5 2.0

0

25

51 2 3 4

20

15

10

0

5

tT

T 150°Cj =

IF

DC

t /T 1/6=

Half-cycle sinewave

t /T 1/3=

t /T 1/2=

FMV-3FU

10

40

30

20

50

0 1 5 50 10

20ms

200

40 60 80 100 120 140 160

1

2

3

4

5

Around backside mounting hole

0 0.5 1.0 1.5 2.0

25°C

100°C150°C

60°C

50

10

1

0.1

0.001

0.0125°C

100°C150°C

60°C

t /T 1/6=

t /T 1/2=

DC

900

100 110 120 130 140 150

1

2

3

4

5

FMV-3GU

10

40

30

20

50

0 1 5 50 10

20ms

50

10

1

0.1

0.01

0.0020 0.4 0.8 1.2 1.6 2.0

25°C

100°CTj=150°C

60°C

1

50

10

0.1

0.01

0.0020 0.2 0.4 0.6 0.8 1.0 1.41.2

25°C

100°CTj=150°C

60°C

0

25

51 2 3 4

20

15

10

5

0

t /T 1/3, Sinewave=

tT

T 150°Cj =t /T 1/6=

t /T 1/2=

DC

t /T 1/3, Sinewave=

I FS

M (A

)I F

SM

(A)

Rth( j--c)=1.8°C/ W

Forward Voltage VF (V) Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Case Temperature Tc (°C)

Forward Voltage VF (V) Forward Voltage VF (V)Case Temperature Tc (°C)

Tc— IF (AV) DeratingVF— IF Characteristics (Typical)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

(For Damper)VF— IF Characteristics (Typical)

(For Compensation)

Forw

ard

Cur

rent

I F

(A)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

VF— IF Characteristics (Typical)

Forward Voltage VF (V)

Forw

ard

Cur

rent

I F

(A)

VF— IF Characteristics (Typical)

IFMS Rating

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

IF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

IF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

(For Damper)VF— IF Characteristics (Typical)

(For Compensation)

I FS

M (A

)

Characteristic Curves

Damper Diodes

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98

200

Half-cycle sinewave

t /T 1/3=

t /T 1/2=

DC

40 60 80 100 120 140 160

1

2

3

4

5

Around backside mounting hole

t

T

FMP-3FU

10

40

30

20

50

0 1 5 50 10

20ms

0

25

51 2 3 4

20

15

10

0

5

Half-cycle sinewave

t /T 1/3=

t /T 1/2=

DC

tT

T 150°Cj =

IF

2010

1

0.1

0.01

0.0010 0.5 1.0 1.5 2.0

25°C

100°C150°C

60°C

1

2010

0.1

0.01

0.0010 0.5 1.0 1.5 2.5 2.0

25°C

100°C150°C

60°C

0

40

51 2 3 4

30

20

10

0

tT

T 150°Cj =

FMQ-3GU

10

40

30

20

50

0 1 5 50 10

20ms

50

10

1

0.1

0.01

0.0010 21 4 53 6 7 8

25°C

100°CTj=150°C

60°C

1

50

10

0.1

0.01

0.0010 0.5 1.0 1.5 2.0 3.02.5

25°C

100°CTj=150°C

60°C

t /T 1/6=

t /T 1/2=

DC

t /T 1/3, Sinewave=

t /T 1/2=

DC

t /T 1/6=

700

90 110 130 150

1

2

3

4

5

t /T 1/3, Sinewave=

I FS

M (A

)I F

SM

(A)

Rth( j--c)=1.8°C/ W

Forward Voltage VF (V) Forward Voltage VF (V)Case Temperature Tc (°C)

Forw

ard

Cur

rent

I F

(A)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) DeratingVF— IF Characteristics (Typical)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

(For Damper)VF— IF Characteristics (Typical)

(For Compensation)

Forward Voltage VF (V) Forward Voltage VF (V)Case Temperature Tc (°C)

Forw

ard

Cur

rent

I F

(A)

Forw

ard

Cur

rent

I F

(A)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) DeratingVF— IF Characteristics (Typical)

IFMS RatingIF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

(For Damper)VF— IF Characteristics (Typical)

(For Compensation)

Characteristic Curves

Damper Diodes

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99

10

40

30

20

50

0 1 5 50 10

20ms

t /T=1/3

t /T=1/2

DC

tT

Tj= 150°C

0

30

25

51 2 3 4

20

15

10

0

5

Sinewave

0

5

4

3

2

1

015025 50 75 100 125

t /T=1/3

t /T=1/2

DCSinewave

FMP-2FUR

FMQ-2FUR

0 25 50 75 100 125 1500

2

1

3

5

4

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

0 21 53 40

5

15

10

20

t /T=1/2

t /T=1/3, Sinewave

t /T=1/6

D.C.

Tj=150°C

Tt

I FS

M (A

)

Overcurrent Cycles

Pea

k Fo

rwar

d S

urge

Cur

rent

I

FSM

(A)

IFMS Rating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating

Case Temperature Tc (°C)

Ave

rage

For

war

d C

urre

nt

I F(A

V) (

A)

Tc— IF (AV) Derating IF(AV)—PF CharacteristicsFo

rwar

d P

ower

Los

s P

F (W

)

Average Forward Current IF(AV) (A)

IF(AV)—PF Characteristics

Forw

ard

Pow

er L

oss

PF

(W)

Average Forward Current IF(AV) (A)

Characteristic Curves

Damper Diodes

Page 102: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

100

RZ1030

50

40

45

35 36

303031.9

2525.9

2022

–10 0 25 50 75 100 125

max

min

VRDC Temperature characteristic

22

20

21

19

18

–10 0 25 50 75 100 125

RZ1040

55

45

50

40

35

38

30

25

28

–10 0 25 50 75 100 125

max

min

30

28

29

27

26

–10 0 25 50 75 100 125

RZ1055

70

60

65

55

67

57

50

57.6

45

47.6

40

–10 0 25 50 75 100 125

max

min

45

40

35

–10 0 25 50 75 100 125

RZ1150

190

170

180

160

178

158

150153.7

140

130133.7

125–10 0 25 50 75 100 125

max

min

140

130

135

125

120

–10 0 25 50 75 100 125

RZ1175

210

190

200

180

207

187

170

177.3

160

150

157.3

–10 0 25 50 75 100 125

max

min

160

150

155

145

140

–10 0 25 50 75 100 125

VZ Temperature dependence

Rev

erse

bre

akd

own

volta

ge V

Z (V

)

VR(DC) Temperature characteristic

Ambient Temperature Ta (°C) Ambient Temperature Ta (°C)

DC

rev

erse

blo

ckin

g vo

ltage

VR

(DC

) (V

)

VZ Temperature dependenceR

ever

se b

reak

dow

n vo

ltage

VZ

(V)

VR(DC) Temperature characteristic

Ambient Temperature Ta (°C) Ambient Temperature Ta (°C)

DC

rev

erse

blo

ckin

g vo

ltage

VR

(DC

) (V

)

VZ Temperature dependence

Rev

erse

bre

akd

own

volta

ge V

Z (V

)

VR(DC) Temperature characteristic

Ambient Temperature Ta (°C) Ambient Temperature Ta (°C)

DC

rev

erse

blo

ckin

g vo

ltage

VR

(DC

) (V

)

VZ Temperature dependence

Rev

erse

bre

akd

own

volta

ge V

Z (V

)

VR(DC) Temperature characteristic

Ambient Temperature Ta (°C) Ambient Temperature Ta (°C)

DC

rev

erse

blo

ckin

g vo

ltage

VR

(DC

) (V

)

VZ Temperature dependence

Rev

erse

bre

akd

own

volta

ge V

Z (V

)

VR(DC) Temperature characteristic

Ambient Temperature Ta (°C) Ambient Temperature Ta (°C)

DC

rev

erse

blo

ckin

g vo

ltage

VR

(DC

) (V

)

VRDC Temperature characteristic

VRDC Temperature characteristic

VRDC Temperature characteristic

VRDC Temperature characteristic

Characteristic Curves

Avalanche Diodes with built-in Thyristor

Page 103: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

101

RZ1200

250

230

240

220

245

225

210

200204.5

190

170

180184.5

–10 0 25 50 75 100 125

190

185

180

175

170

–10 0 25 50 75 100 125

min

max

EZ0150

190

170

180

160

178

158

150153.7

140

130

125

133.7

–10 0 25 50 75 100 125

max

min

140

130

135

125

120

–10 0 25 50 75 100 125

VRDC Temperature characteristic

VZ Temperature dependence

Rev

erse

bre

akd

own

volta

ge V

Z (V

)

VR(DC) Temperature characteristic

Ambient Temperature Ta (°C) Ambient Temperature Ta (°C)

DC

rev

erse

blo

ckin

g vo

ltage

VR

(DC

) (V

)

VRDC Temperature characteristic

VZ Temperature dependenceR

ever

se b

reak

dow

n vo

ltage

VZ

(V)

VR(DC) Temperature characteristic

Ambient Temperature Ta (°C) Ambient Temperature Ta (°C)

DC

rev

erse

blo

ckin

g vo

ltage

VR

(DC

) (V

)

Characteristic Curves

Avalanche Diodes with built-in Thyristor

Page 104: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

102

PZ 628

00

40

3

6

20 100

5

4

1

I 60A=Z

40A

80

2

10

10

80

5 100

60

40

50

20

60

20A

Rectangular Wave Pulse

Pulse —VZUP Characteristics

Bre

akd

own

volta

ge v

aria

tion

VZ

UP

(V)

Conduction Pulse Width (ms)

Pulse Width — IR Characteristics

Rev

erse

Cur

rent

IR

(A)

Pulse Width (ms)

Characteristic Curves

Power Zener Diodes

Page 105: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

103

SV-2SS, 3SS, 4SS

20

80

40

60

100

0 0 20 10040 60 801 5 10 50 0.5 100

0

10

8

6

4

2

12

0.01 1 10 100 10000.10

1

2

3

4

SV-2SS

SV-4SS

SV-3SS

SV-2SS

SV-4SS

SV-3SS

VR-60SS, 61SS

20

80

40

60

100

0 0 20 10040 60 801 5 10 50 0.5 100

0

10

8

6

4

2

12

0.01 1 10 100 10000.10

1

2

3

4

VR-61SS

VR-60SS VR-60SS

VR-61SS

SV 02YS, 03YS, 04YS, 05YS, 06YS

20

80

40

60

100

030 50 13070 90 1101 5 10 50 0.5 100

0

9

6

3

12

15

1 10 100 10000.10

1

2

3

6

4

5

SV 06YS

SV 05YS

SV 04YS

SV 03YS

SV 02YS

SV 06YSSV 05YS

SV 04YS

SV 03YS

SV 02YS

Ambient tamperature Ta (°C)

Per

cent

age

agai

nst

DC

cur

rent

(%

)

Forward current IF (mA)

IF (%)—Ta Characteristics

Forward current IF (mA)

Forw

ard

vol

tage

V

F (A

)

VF—IF Characteristics (Typical) VF—IF Characteristics (Typical)

Forw

ard

vol

tage

var

iatio

n p

er º

C

V

F (m

V/º

C)

Ambient tamperature Ta (°C)

Per

cent

age

agai

nst

DC

cur

rent

(%

)

Forward current IF (mA)

IF (%)—Ta Characteristics

Forward current IF (mA)

Forw

ard

vol

tage

V

F (A

)

VF—IF Characteristics (Typical) VF—IF Characteristics (Typical)Fo

rwar

d v

olta

ge v

aria

tion

per

ºC

VF

(mV

/ºC

)

Ambient tamperature Ta (°C)

Per

cent

age

agai

nst

DC

cur

rent

(%

)

Forward current IF (mA)

IF (%)—Ta Characteristics

Forward current IF (mA)

Forw

ard

vol

tage

V

F (A

)

VF—IF Characteristics (Typical) VF—IF Characteristics (Typical)

Forw

ard

vol

tage

var

iatio

n p

er º

C

V

F (m

V/º

C)

Characteristic Curves

Silicon Varistors

Page 106: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

104

Ordinary Diodes

2 MountingTo mount a frame-type diode on a heatsink, use its screwhole. Do not fix its resin body as the silicon chip may get broken.

3 Temperature measurementFor an axial type diode, measure the temperature of the lead wire on the main body side. The thermocouple to be used must be as thin as possible (approximately

0.125).

4 Temperature riseA diode’s temperature increases due to losses from forward current, reverse current and reverse recovery time.In normal use, losses are mainly attributable to forward current and voltage. However, in high frequency circuits such as switching power supplies, losses due to reverse recovery time also occurs. Moreover, in diodes having large reverse currents like Schottky barrier diodes losses due to reverse current cannot be disre-garded.Forward loss tends to decrease at high temperatures. However, reverse loss tends to increase at high tem-peratures. Therefore, it is necessary to consider the ambient temperature when verifying operation.

5 Inrush currentIn a capacitor-input type rectifier circuit, inrush current flows when the power supply is switched on. The peak value of this inrush current shall be set less than peakforward surge current IFSM (I2 t can also be obtainedbut set the minimum pulse width to 1 msec). The value of IFSM is guaranteed for a single shot only. If the inrush current is repeated within a short period of time, the derating has to be taken into account.

6 Peak value currentLimit of the peak value current must be set to 10 times of the average current (Io or IF (AV)) under normal use. If the peak value increases. the diode’s forward loss also increases. In this case, check the temperature rise.

Carefully study the mounting method when the usage environment is prone to creeping discharge.

Surface Mount Diodes

(SFP - 5 / 6 )

Soldering (flow, reflow) i) Use rosin based flux. Never use acidic fluxes. ii) To prevent the build-up of large thermal stress, preheat within 1 to 2 minutes at 150ºC and solder within the usable range shown below.

iii) When using a soldering iron, make use of the following references: Temperature of soldering Iron Tip:

less than 300ºC(Power of the soldering iron: 30W or less) The soldering tip must be as thin as possible.

Soldering time: less than 10 seconds

Contact us if there is any unclear point.

Fixed

BendFixed

Bend

Axial type

Frame type

160

180

200

220

240

260

280

300

0 10 20 30 40 50 60 70 80

2.0 2.0

4.0 to 4.2

2.0

REFERENCE : Copper foil land for mounting SFP series diodes.

(Unit: mm)

1 Lead formingWhen forming leads, hold the lead wire on the main body’s side so as to prevent stress from being applied to the main body.

Sol

der

ing

Tem

per

atur

e (º

C)

Time (sec)

Usa

ble

ran

ge

Application Notes

Page 107: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

105

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Part Number Explanation Page Part Number Explanation Page Part Number Explanation Page

AG01

AG01A

AG01Y

AG01Z

AK 03

AK 04

AK 06

AK 09

AL01Z

AM01

AM01A

AM01Z

AP01C

AS01

AS01A

AS01Z

AU01

AU01A

AU01Z

AU02

AU02A

AU02Z

AW 04

EA 03

EG 1

EG 1A

EG 1Y

EG 1Z

EG01

EG01A

EG01C

EG01Y

EG01Z

EH 1

EH 1A

EH 1Z

EK 03

EK 04

EK 06

EK 09

EK 13

EK 14

EK 16

EK 19

EL 1

EL 1Z

EL02Z

EM 1

EM 1A

EM 1B

29

30

25

26

35

36

38

39

26

14

15

13

33

20

21

19

20

21

19

20

21

19

36

35

29

30

25

26

29

30

33

25

26

20

21

19

35

36

38

39

35

36

38

39

29

26

26

14

15

16

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Rectifier Diodes(Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Avalanche Diodes with built-in Thyristor

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

EM 1C

EM 1Y

EM 1Z

EM 2

EM 2A

EM 2B

EM01

EM01A

EM01Z

EN01Z

EP01C

ES 1

ES 1A

ES 1F

ES 1Z

ES01

ES01A

ES01F

ES01Z

EU 1

EU 1A

EU 1Z

EU 2

EU 2A

EU 2YX

EU 2Z

EU01

EU01A

EU01Z

EU02

EU02A

EU02Z

EZ1050

FMB-2204

FMB-2206

FMB-2304

FMB-2306

FMB-24

FMB-24H

FMB-24L

FMB-24M

FMB-26

FMB-26L

FMB-29

FMB-29L

FMB-34

FMB-34M

FMB-34S

FMB-36

FMB-36M

17

12

13

14

15

16

14

15

13

26

33

20

21

24

19

20

21

24

19

20

21

19

20

21

18

19

20

21

19

20

21

19

44

36

38

36

38

36

36

36

36

38

38

39

39

36

36

36

38

38

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

FMB-39

FMB-39M

FMB-G14

FMB-G14L

FMB-G16L

FMB-G19L

FMB-G24H

FMC-26U

FMC-26UA

FMC-28U

FMC-28UA

FMC-G28S

FMC-G28SL

FMD-G26S

FME-220A

FME-230A

FME-24H

FME-24L

FMG-12S,R

FMG-13S,R

FMG-14S,R

FMG-22S,R

FMG-23S,R

FMG-24S,R

FMG-26S,R

FMG-32S,R

FMG-33S,R

FMG-34S,R

FMG-36S,R

FMG-G26S

FMG-G2CS

FMG-G36S

FMG-G3CS

FMJ-2203

FMJ-2303

FMJ-23L

FML-12S

FML-13S

FML-14S

FML-22S

FML-23S

FML-24S

FML-32S

FML-33S

FML-34S

FML-36S

FML-G12S

FML-G13S

FML-G14S

FML-G16S

39

39

36

36

38

39

36

30

34

32

34

32

32

30

39

39

36

36

26

28

29

26

28

29

30

26

28

29

30

30

33

30

33

35

35

35

26

28

29

26

28

29

26

28

29

30

26

28

29

30

Product Index by Part Number

Page 108: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

Part Number Explanation Page Part Number Explanation Page Part Number Explanation Page

106

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Damper Diode (Diode modulation)

Damper Diode (Diode modulation)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Diode modulation)

Damper Diode (Diode modulation)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Damper Diode (Diode modulation)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Center-tap)

Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Damper Diode (Frame. 1 Chip)

Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Damper Diode (Diode modulation)

Damper Diode (Diode modulation)

Damper Diode (Frame. 1 Chip)

Schottky Barrier Diodes (Center-tap)

Schottky Barrier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

FML-G22S

FML-G26S

FMM-22S,R

FMM-24S,R

FMM-26S,R

FMM-31S,R

FMM-32S,R

FMM-34S,R

FMM-36S,R

FMN-G12S

FMN-G14S

FMN-G16S

FMP-2FUR

FMP-3FU

FMP-G12S

FMP-G2FS

FMP-G5HS

FMQ-2FUR

FMQ-3GU

FMQ-G1FS

FMQ-G2FLS

FMQ-G2FMS

FMQ-G2FS

FMQ-G5FMS

FMQ-G5GS

FMR-G5HS

FMT-2FUR

FMU-12S,R

FMU-14S,R

FMU-16S,R

FMU-21S,R

FMU-22S,R

FMU-24S,R

FMU-26S,R

FMU-32S,R

FMU-34S,R

FMU-36S,R

FMU-G16S

FMU-G26S

FMU-G2FS

FMU-G2YXS

FMV-3FU

FMV-3GU

FMV-G5FS

FMW-24H

FMW-24L

FMX-12S

FMX-22S

FMX-22SL

FMX-23S

26

30

13

14

15

12

13

14

15

26

29

30

41

41

26

24,40

24,40

41

41

24,40

24,40

24,40

24,40

24,40

24,40

24,40

41

19

20

21

18

19

20

21

19

20

21

21

21

24,40

18

41

41

24,40

36

36

26

26

26

28

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Center-tap)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

Ultra-Fast-Recovery Rectifier Diodes (Frame. 1 Chip)

High-Voltage Rectifier Diodes for Microwave Oven

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Power Zener Diodes (Axial)

Schottky Barrier Diodes (Axial)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Ultra-Fast-Recovery Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Schottky Barrier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Ultra-Fast-Recovery Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Rectifier Diodes (Bridge)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (For Compensation)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (For Compensation)

FMX-32S

FMX-33S

FMX-G12S

FMX-G14S

FMX-G16S

FMX-G22S

FMX-G26S

HVR-1X-40B

MI1A3

MI2A3

MPE-24H

MPE-29G

PZ 628

RA 13

RBV-1306

RBV-1506

RBV-1506S

RBV-2506

RBV-401

RBV-402

RBV-402L

RBV-404

RBV-406

RBV-406B

RBV-406H

RBV-406M

RBV-408

RBV-40C

RBV-4102

RBV-601

RBV-602

RBV-602L

RBV-604

RBV-606

RBV-606H

RBV-608

RC 2

RC 3B2

RF 1

RF 1A

RF 1B

RF 1Z

RG 10

RG 10A

RG 10Y

RG 10Z

RG 1C

RG 2

RG 2A

RG 2A2

26

28

26

29

30

26

30

42

35

35

36

39

45

35

15

15

15

15

12

13

26

14

15

38

15

15

16

17

13

12

13

26

14

15

15

16

24

40

20

21

22

19

29

30

25

26

33

29

30

40

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Schottky Barrier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

RG 2Y

RG 2Z

RG 4

RG 4A

RG 4C

RG 4Y

RG 4Z

RH 1

RH 10F

RH 1A

RH 1B

RH 1C

RH 1Z

RH 2D

RH 2F

RH 3F

RH 3G

RH 4F

RJ 43

RK 13

RK 14

RK 16

RK 19

RK 33

RK 34

RK 36

RK 39

RK 43

RK 44

RK 46

RK 49

RL 10Z

RL 2

RL 2A

RL 2Z

RL 3

RL 3A

RL 3Z

RL 4A

RL 4Z

RM 1

RM 10

RM 10A

RM 10B

RM 10Z

RM 11A

RM 11B

RM 11C

RM 1A

RM 1B

25

26

29

30

33

25

26

20

24,40

21

22

23

19

24,40

24,40

24,40

24,40

24,40

35

35

36

38

39

35

36

38

39

35

36

38

39

26

29

30

26

29

30

26

30

26

14

14

15

16

13

15

16

17

15

16

Product Index by Part Number

Page 109: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms

107

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

RM 1C

RM 1Z

RM 2

RM 2A

RM 2B

RM 2C

RM 2Z

RM 3

RM 3A

RM 3B

RM 3C

RM 4

RM 4A

RM 4AM

RM 4B

RM 4C

RM 4Y

RM 4Z

RN 1Z

RN 2Z

RN 3Z

RN 4Z

RO 2

RO 2A

RO 2B

RO 2C

RO 2Z

RP 1H

RP 3F

RS 1A

RS 1B

RS 3FS

RS 4FS

RU 1

RU 1A

RU 1B

RU 1C

RU 1P

RU 2

RU 20A

RU 2AM

RU 2B

RU 2C

RU 2M

RU 2YX

RU 2Z

RU 3

RU 30

RU 30A

RU 30Y

17

13

14

15

16

17

13

14

15

16

17

14

15

15

16

17

12

13

26

26

26

26

14

15

16

17

13

34

24,40

21

22

24,40

24,40

20

21

22

23

33

21

21

21

22

23

20

18

19

20

20

21

18

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Damper Diodes (Axial)

Damper Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Fast-Recovery Rectifier Diodes (Axial)

Ultra-Fast-Recovery Rectifier Diodes (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Avalanche Diodes with built-in Thyristor (Axial)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Rectifier Diodes (Surface Mount)

RU 30Z

RU 31

RU 31A

RU 3A

RU 3AM

RU 3B

RU 3C

RU 3M

RU 3YX

RU 4

RU 4A

RU 4AM

RU 4B

RU 4C

RU 4D

RU 4DS

RU 4M

RU 4Y

RU 4YX

RU 4Z

RX 3Z

RZ1030

RZ1040

RZ1055

RZ1065

RZ1100

RZ1125

RZ1150

RZ1155

RZ1175

RZ1200

SFPA-53

SFPA-63

SFPA-73

SFPB-54

SFPB-56

SFPB-59

SFPB-64

SFPB-66

SFPB-69

SFPB-74

SFPB-76

SFPE-63

SFPE-64

SFPJ-53

SFPJ-63

SFPJ-73

SFPL-52

SFPL-62

SFPM-52

19

20

21

21

21

22

23

20

18

20

21

21

22

23

24,40

24,40

20

18

18

19

26

44

44

44

44

44

44

44

44

44

44

35

35

35

36

38

39

36

38

39

36

38

35

36

35

35

35

26

26

13

Rectifier Diodes (Surface Mount)

Rectifier Diodes (Surface Mount)

Rectifier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Power Zener Doides (Surface Mount)

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes for Ignition Coil

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes for Ignition Coil

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes

High-Voltage Rectifier Diodes for Ignition Coil

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Ultra-Fast-Recovery Rectifier Diodes (Surface Mount)

Power Zener Doides (Surface Mount)

Schottky Barrier Diodes (Surface Mount)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

Silicon Varistors (Axial)

High-Voltage Rectifier Diodes for Microwave Oven

Silicon Varistors (Axial)

Silicon Varistors (Axial)

SFPM-54

SFPM-62

SFPM-64

SFPX-62

SFPX-63

SFPZ-68

SHV-02

SHV-03

SHV-03S

SHV-05JS

SHV-06EN

SHV-08DN

SHV-08EN

SHV-08J

SHV-10

SHV-10DN

SHV-10EN

SHV-12

SHV-12DN

SHV-12EN

SHV-14

SHV-16

SHV-20

SHV-24

SHV-30J

SPB-64S

SPB-66S

SPB-G34S

SPB-G54S

SPB-G56S

SPJ-63S

SPJ-G53S

SPX-62S

SPX-G32S

SPZ-G36

SSB-14

SV 02YS

SV 03YS

SV 04YS

SV 05YS

SV 06YS

SV-2SS

SV-3SS

SV-4SS

UX-F5B

VR-60SS

VR-61SS

14

13

14

26

28

45

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

42

36

38

36

36

38

35

35

26

26

45

36

47

47

47

47

47

46

46

46

42

46

46

Part Number Explanation Page Part Number Explanation Page Part Number Explanation Page

Product Index by Part Number

Page 110: SILICON DIODES - IBS ElectronicsSchottky Barrier Diodes Damper Diodes / High-Voltage Rectifier Diodes Avalanche Diodes / Power Zener Diodes / Silicon Varistors Symbols and Terms