silicon carbide power mosfet: 45 a, 1200 v, 80 m, n

This is information on a product in full production.

September 2014 DocID023109 Rev 7 1/12

12

SCT30N120

Silicon carbide Power MOSFET: 45 A, 1200 V, 80 mΩ, N-channel in HiP247™ package

Datasheet - production data

Figure 1. Internal schematic diagram

Features• Very tight variation of on-resistance vs.

temperature

• Slight variation of switching losses vs. temperature

• Very high operating temperature capability (200 °C)

• Very fast and robust intrinsic body diode

• Low capacitance

• Easy to drive

Applications• Solar inverters, UPS

• Motor drives

• High voltage DC-DC converters

• Switch mode power supply

DescriptionThis silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Note: The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 3: Package mechanical data.

12

3

HiP247™

Table 1. Device summary

Order code Marking Package Packaging

SCT30N120 SCT30N120 HiP247™ Tube

www.st.com

http://www.st.com

Contents SCT30N120

2/12 DocID023109 Rev 7

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

DocID023109 Rev 7 3/12

SCT30N120 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 1200 V

VGS Gate-source voltage -10/+25 V

IDDrain current (continuous) at TC = 25 °C (limited by die)

45 A

IDDrain current (continuous) at TC = 25 °C (limited by package)

40 A

ID Drain current (continuous) at TC = 100 °C 34 A

IDM (1)

1. Pulse width limited by safe operating area.

Drain current (pulsed) 90 A

PTOT Total dissipation at TC = 25 °C 270 W

Tstg Storage temperature-55 to 200

°C

Tj Max. operating junction temperature °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.65 °C/W

Rthj-amb Thermal resistance junction-ambient max 40 °C/W

Electrical characteristics SCT30N120

4/12 DocID023109 Rev 7

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

IDSSZero gate voltage drain current (VGS = 0)

VDS = 1200 VVDS = 1200 V, TJ = 200 °C

150

100 µAµA

IGSSGate-body leakagecurrent (VDS = 0)

VGS = +22 / -10 V 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 1.8 2.6 V

RDS(on)Static drain-source on- resistance

VGS = 20 V, ID = 20 A 80 100 mΩ

VGS = 20 V, ID = 20 A, TJ = 150 °C

90 mΩ

VGS = 20 V, ID = 20 A, TJ = 200 °C

100 mΩ

Table 5. Dynamic


Ciss

Coss

Crss

Input capacitanceOutput capacitance

Reverse transfer capacitance

VDS = 400 V, f = 1 MHz, VGS = 0

-1700130

25

-pFpF

pF

Qg

Qgs

Qgd

Total gate chargeGate-source charge

Gate-drain charge

VDD = 800 V, ID = 20 A,

VGS = 0 − 20 V-

10516

40

-nCnC

nC

Rg Gate input resistance f=1 MHz open drain - 5 - Ω

DocID023109 Rev 7 5/12

SCT30N120 Electrical characteristics

Table 6. Switching energy (inductive load)


Eon

Eoff

Turn-on switching losses

Turn-off switching losses

VDD = 800 V, ID = 20 A

RG= 6.8 Ω, VGS = -2/20 V-

500

350-

µJ

µJ

Eon

Eoff

Turn-on switching losses

Turn-off switching losses

VDD = 800 V, ID = 20 A

RG= 6.8 Ω, VGS = -2/20 VTJ= 150 °C

-500

400-

µJ

µJ

Table 7. Switching times


td(on)V

tf(V)

td(off)V

tr(V)

Turn-on delay timeFall time

Turn-off delay timeRise time

VDD = 800 V, ID = 20 A,

RG = 0 Ω, VGS = 0/20 V-

1928

4520

-

nsns

nsns

Table 8. Reverse SiC diode characteristics

Symbol Parameter Test conditions Min Typ. Max Unit

VSD Diode forward voltage IF = 10 A, VGS = 0 - 3.5 - V

trrQrr

IRRM

Reverse recovery timeReverse recovery chargeReverse recovery current

ISD = 20 A, di/dt = 100 A/µsVDD = 800 V

-1401402

nsnCA


6/12 DocID023109 Rev 7

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics (TJ=25°C) Figure 5. Output characteristics (TJ=200°C)

Figure 6. Transfer characteristics Figure 7. Power dissipation

ID

10

1

0.10.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS

(on)

100μs

1ms

10ms

1000

AM17527v1

10 10 10 10 10 tp(s)0

0.1

K

0.2

0.3

0.4

0.5

-6 -5 -4 -3 -2 10-1

AM17526v1

ID

30

20

10

00 2 VDS(V)6

(A)

4 8

40

50

60

70

80VGS=20V

18V

16V

14V

12V

10V

AM17518v1 ID

30

20

10

00 VDS(V)

(A)

40

50

60

70

80VGS=20V

18V16V

14V

12V

10V

2 64 8

AM17519v1

ID

15

10

5

00 4 VGS(V)8

(A)

2 6 10

20

25

12

30

35VDS=20V

200°C25°C

AM17521v1PD

-50 0 TC(°C)

(W)

50 1000

50

100

150

200

250TJ=200°C

150

AM17525v1

DocID023109 Rev 7 7/12

SCT30N120 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Switching energy vs. drain current Figure 11. Switching energy vs. junction temperature

Figure 12. Normalized BVDSS vs. temperature Figure 13. Normalized gate threshold voltage vs. temperature

VDD=800VID=20A

VGS

4

00 20 Qg(nC)

(V)

80

8

40 60 100

12

16

AM17529v1 C

1000

100

100 600 VDS(V)

(pF)

400 800

Ciss

Coss

Crss

200

AM17528v1

E

100

0 4 ID(A)

(μJ)

2 6

Eon

Eoff

8

Etot

10 12 14 16 18

200

300

400

500

600

700

800

0

VDD=VCLAMP=800V

VGS=-2V/20VRG=6.8ΩTJ=25°C ,

AM17530v1E

100

25 50 TJ(°C)

(μJ)

Eon

Eoff

75

Etot

100 125

200300400500600700800

0

90010001100

VDD=VCLAMP=800V

VGS=-2V/20VRG=6.8ΩID=20V ,

AM17531v1

BVDSS

-50 0 TJ(°C)

(norm)

50 1000.94

0.96

0.98

1.00

1.02

1.04ID=1mA

150

AM17523v1 VGS(th)

0.6

0.4

0.2

0-50 0 TJ(°C)

(norm)

0.8

50 100 150

ID=1mA

1.2

1.0

1.4

1.6

AM17522v1


8/12 DocID023109 Rev 7

Figure 14. Normalized on-resistance vs. temperature

Figure 15. Body diode characteristics

RDS(on)

2.4

2.0

1.2

0.4

TJ(°C)

(norm)

7525 50 100 125 150 175

0.8

0

1.6

2.8

3.2

VGS=20VID=20A

AM17520v1VSD -5 -3

ISD(A)

(V) -4 -2 -1

-4

-2

TJ=-55°C

TJ=200°C

TJ=25°C

00

-8

-6

-12

-10

-16

-14

-18

AM17524v1

DocID023109 Rev 7 9/12

SCT30N120 Package mechanical data

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Figure 16. HiP247™ drawing

8396756_A

http://www.st.com

Package mechanical data SCT30N120

10/12 DocID023109 Rev 7

Table 9. HiP247™ mechanical data

Dim.mm.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

DocID023109 Rev 7 11/12

SCT30N120 Revision history

4 Revision history

Table 10. Document revision history

Date Revision Changes

10-May-2012 1 First release

21-May-2013 2Updated trr value in Table 8.

Updated dynamic parameters in Table 5, VGS(th) in Table 4 and Eon in Table 6.

24-Jun-2013 3Document status promoted from target to preliminary data.Added: Section 2.1: Electrical characteristics (curves)

11-Jul-2013 4Updated Figure 4: Output characteristics (TJ=25°C) and Figure 5: Output characteristics (TJ=200°C).

18-Dec-2013 5Updated parameters in Table 2: Absolute maximum ratings and Table 4: On/off states.

27-May-2014 6Added Table 7: Switching times.Updated Section 3: Package mechanical data.Minor text changes.

25-Sep-2014 7 Document status promoted from preliminary to production data.

SCT30N120

12/12 DocID023109 Rev 7

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2014 STMicroelectronics – All rights reserved

silicon carbide power mosfet: 45 a, 1200 v, 80 m, n

Documents