1

2

TAB

3

H2PAK-2

D(TAB)

G(1)

S(2,3)

NCHG1DTABS23

Features• Very tight variation of on-resistance vs temperature• Very high operating temperature capability (TJ = 175 °C)• Very fast and robust intrinsic body diode• Low capacitance

Application• High voltage DC-DC converters• Switch mode power supplies

DescriptionThis silicon carbide Power MOSFET is produced exploiting the advanced, innovativeproperties of wide bandgap materials. This results in unsurpassed on-resistance perunit area and very good switching performance almost independent of temperature.The outstanding thermal properties of the SiC material allow designers to use anindustry-standard outline with significantly improved thermal capability. Thesefeatures render the device perfectly suitable for high-efficiency and high powerdensity applications.

Product status link

SCT10N120H

Product summary

Order code SCT10N120H

Marking SCT10N120

Package H2PAK-2

Packing Tape and reel

Silicon carbide Power MOSFET 1200 V, 13 A, 500 mΩ (typ., TJ=25 °C), in an H²PAK-2 package

SCT10N120H

Datasheet

DS13479 - Rev 1 - October 2020For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 1200 V

VGS Gate-source voltage -10 to 25 V

ID Drain current (continuous) at TC = 25 °C 13 A

ID Drain current (continuous) at TC = 100 °C 10 A

IDM (1) Drain current (pulsed) 30 A

PTOT Total power dissipation at TC = 25 °C 130 W

Tstg Storage temperature range-55 to 175

°C

Tj Operating junction temperature range °C

1. Pulse width limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 1.17 °C/W

Rthj-pcb (1) Thermal resistance junction-pcb 40 °C/W

1. When mounted on 1 inch² FR-4 board, 2 oz Cu.

SCT10N120HElectrical ratings

DS13479 - Rev 1 page 2/15

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdownvoltage VGS = 0 V, ID = 1 mA 1200 V

IDSSZero gate voltage

drain currentVDS = 1200 V, VGS = 0 V 10 µA

IGSSGate-body leakage

currentVDS = 0 V, VGS = -10 to 22 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1.8 3.5 V

RDS(on)Static drain-source

on-resistance

VGS = 20 V, ID = 6 A 500 690 mΩ

VGS = 20 V, ID = 6 A,

TJ = 150 °C520 mΩ

VGS = 20 V, ID = 6 A,

TJ = 175 °C540 mΩ

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitanceVDS = 400 V, f = 1 MHz,

VGS = 0 V

- 290 - pF

Coss Output capacitance - 30 - pF

Crss Reverse transfer capacitance - 9 - pF

Qg Total gate chargeVDD = 800 V, ID = 6 A,

VGS = 0 to 20 V

- 22 - nC

Qgs Gate-source charge - 3 - nC

Qgd Gate-drain charge - 10 - nC

Rg Gate input resistance f = 1 MHz, ID = 0 A - 8 - Ω

Table 5. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon Turn-on switching energy VDD = 800 V, ID = 6 A

RG = 10 Ω, VGS = -5 to 20 V

- 90 - µJ

Eoff Turn-off switching energy - 30 - µJ

Eon Turn-on switching energy VDD = 800 V, ID = 6 A

RG = 10 Ω, VGS = -5 to 20 V

TJ = 150 °C

- 104 - µJ

Eoff Turn-off switching energy - 33 - µJ

SCT10N120HElectrical characteristics

DS13479 - Rev 1 page 3/15

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VDD = 800 V, ID = 6 A,

RG = 10 Ω, VGS = -5 to 20 V

- 7 - ns

tf Fall time - 17 - ns

td(off) Turn-off delay time - 14 - ns

tr Rise time - 12 - ns

Table 7. Reverse SiC diode characteristics

Symbol Parameter Test conditions Min Typ. Max Unit

VSD Diode forward voltage IF = 6 A, VGS = 0 V - 2.5 - V

trr Reverse recovery timeISD = 6 A, di/dt = 2000 A/µs

VDD = 800 V, TJ= 150 °C

- 16 - ns

Qrr Reverse recovery charge - 107 - nC

IRRM Reverse recovery current - 12 - A

SCT10N120HElectrical characteristics

DS13479 - Rev 1 page 4/15

2.1 Electrical characteristics curves

Figure 1. Normalized thermal impedance

GIPG230520161115ZTH

0.8

0.6

0.4

0.2

0.010 -6 10 -5 10 -4 10 -3 10 -2 10 -1

K

t p (s)

Figure 2. Output characteristics (TJ= 25 °C)

GIPG230520161115OCH_25

10

8

6

4

2

00 2 4 6 8 10 12

I D (A)

V DS (V)

V GS =10 VV GS =12 V

V GS = 20 V

V GS =14 V

V GS =16 V

Figure 3. Output characteristics (TJ= 150 °C)

GIPG230520161116OCH_150

10

8

6

4

2

00 2 4 6 8 10 12

I D (A)

V DS (V)V GS =6 V

V GS =10 V

V GS =12 V

V GS =14 VV GS =16, 20 V

Figure 4. Transfer characteristics

GIPG230520161117TCH

10

8

6

4

2

00 4 8 12 16

I D (A)

V GS (V)

V DS = 12 V

T J = 150 °C

T J = 25 °C

Figure 5. Total power dissipation

GADG240920201641MT

120

100

80

60

40

20

00 50 100 150

PTot (W)

TC (°C)

TJ =175°C

Figure 6. Gate charge vs gate-source voltage

GIPG230520161121QVG

20

16

12

8

4

00 4 8 12 16 20

V GS (V)

Q g (nC)

V DD = 800 VI D = 6 A

SCT10N120HElectrical characteristics curves

DS13479 - Rev 1 page 5/15

Figure 7. Capacitance variations

GIPG230520161122CVR

10 2

10 1

10 010 -1 10 0 10 1 10 2

C (pF)

V DS (V)

C ISS

C OSS

C RSSf = 1 MHz

Figure 8. Switching energy vs. drain current

GIPG230520161127SWEC

320

240

160

80

00 4 8 12

E (µJ)

I D (A)

E tot

E on

E off

V DD = 800 VR G = 10 ΩV GS = -5 to 20 V

Figure 9. Switching energy vs. junction temperature

GIPG230520161131SWET

120

80

40

00 50 100 150

E (µJ)

T J (°C)

E tot

E on

E off

V DD = 800 V

R G = 10 ΩV GS = -5 to 20 V

I D = 6 A

Figure 10. Normalized V(BR)DSS vs. temperature

GIPG230520161133BDV

1.04

1.02

1.00

0.98

0.96

0.94-75 -25 25 75 125 175

V(BR)DSS (norm.)

Tj (°C)

ID = 1 mA

Figure 11. Normalized gate threshold voltage vs.temperature

GIPG230520161149VTH

1.4

1.2

1.0

0.8

0.6

0.4-75 -25 25 75 125 175

V GS(th) (norm.)

T j (°C)

I D = 250 µA

Figure 12. Normalized on-resistance vs. temperature

GIPG230520161134RON

1.2

1.1

1.0

0.9

0.8

0.725 75 125 175

R DS(on) (norm.)

T j (°C)

V GS = 20 V

SCT10N120HElectrical characteristics curves

DS13479 - Rev 1 page 6/15

Figure 13. Body diode characteristics (TJ= -50 °C)

GIPG230520161143BDC_-50

-2

-4

-6

-8

-10

-12

-8 -6 -4 -2I D (A)

V GS = -5 V

V GS = -2 V

V GS = 0 V

V DS (V)

Figure 14. Body diode characteristics (TJ= 25 °C)

GIPG230520161146BCD_25

-2

-4

-6

-8

-10

-12

-8 -6 -4 -2

V GS = -5 V

I D (A)

V GS = -2 V

V GS = 0 V

V DS (V)

Figure 15. Body diode characteristics (TJ= 150 °C)

GIPG230520161151BDC_150

-2

-4

-6

-8

-10

-12

-8 -6 -4 -2

V GS = -5 V

I D (A)

V GS = -2 V

V GS = 0 V

V DS (V)

Figure 16. 3rd quadrant characteristics (TJ= -50 °C)

GIPG230520161155QC_-50

-2

-4

-6

-8

-10

-12

-4 -3 -2 -1

VGS = 15 V

V DS (V)I D(A)

VGS =10 V

V GS =0 V

VGS =5 V

Figure 17. 3rd quadrant characteristics (TJ= 25 °C)

GIPG230520161223QC_25

-2

-4

-6

-8

-10

-12

-4 -3 -2 -1

VGS = 15 V

VDS (V)ID (A)

VGS =10 V

VGS =0 VVGS =5 V

Figure 18. 3rd quadrant characteristics (TJ= 150 °C)

GIPG230520161225QC_150

-2

-4

-6

-8

-10

-12

-4 -3 -2 -1

VGS = 15 V

V DS (V)I D(A)

VGS =10 V

V GS =0 VVGS =5 V

SCT10N120HElectrical characteristics curves

DS13479 - Rev 1 page 7/15

3 Test circuits

Figure 19. Switching test waveforms for transition times

GIPD101020141511FSR

Figure 20. Clamped inductive switching waveform

VDSVDS On

td (Off) tr

t Off

90%90%

t Ontd (On) tf

VGS

VGS Off

VGS On

VDS Off

10%

10%

90%

10%

GIPD101020141502FSR

SCT10N120HTest circuits

DS13479 - Rev 1 page 8/15

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 H²PAK-2 package information

Figure 21. H²PAK-2 package outline

8159712_9

SCT10N120HPackage information

DS13479 - Rev 1 page 9/15

Table 8. H²PAK-2 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.30

-

4.70

A1 0.03 0.20

C 1.17 1.37

D 8.95 9.35

e 4.98 5.18

E 0.50 0.90

F 0.78 0.85

F2 1.14 1.70

H 10.00 10.40

H1 7.40 7.80

J1 2.49 2.69

L 15.30 15.80

L1 1.27 1.40

L2 4.93 5.23

L3 6.85 7.25

L4 1.50 1.70

M 2.60 2.90

R 0.20 0.60

V 0° 8°

Figure 22. H²PAK-2 recommended footprint

8159712_9

Note: Dimensions are in mm.

SCT10N120HH²PAK-2 package information

DS13479 - Rev 1 page 10/15

4.2 Packing information

Figure 23. Tape outline

P1A0 D1

P0

FW

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

Top covertape

AM08852v2

SCT10N120HPacking information

DS13479 - Rev 1 page 11/15

Figure 24. Reel outline

A

D

B

Full radius

Tape slotIn core for

Tape start

G measured

At hub

C

N

REEL DIMENSIONS

40 mm min.

Access hole

At slot location

T

Table 9. Tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base quantity 1000

P2 1.9 2.1 Bulk quantity 1000

R 50

T 0.25 0.35

W 23.7 24.3

SCT10N120HPacking information

DS13479 - Rev 1 page 12/15

Revision history

Table 10. Document revision history

Date Revision Changes

05-Oct-2020 1 First release

SCT10N120H

DS13479 - Rev 1 page 13/15

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

4.1 H²PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

SCT10N120HContents

DS13479 - Rev 1 page 14/15

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2020 STMicroelectronics – All rights reserved

SCT10N120H

DS13479 - Rev 1 page 15/15