rohm's sic power device - synergy electronics · rohm’s sic mosfets have outstanding...

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Power Device Production Division

ROHM'ｓ SiC Power Device

Feb 24, 2014


SiC Power Devices' Hot Applications

SiC devices have been already used in various application because of their superior characteristics over conventional silicon devices

Power supplies （Air Conditioner, IT servers,

EV Charger）

• Mainly used in PFC circuit

• Efficiency improves by 0.5～1.5% with SiC SBD

• Also used in on board charger

for EV in PFC and secondary

side bridge

Why SiC?

• Number and size of Passive

components reduced

• Higher efficiency

Solar inverter

• Used in boost converter and

DC/AC

• Efficiency improves by 0.5～1.0% with SiC SBD

Why SiC?

• High conversion efficiency,

over 98% is achieved with SiC

MOSFET

Industrial equipment

New product development is in

progress in;

High frequency power sources

and laser oscillator

Induction heating inverters

Auxiliary inverters for railway

train

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http://robonable.typepad.jp/.shared/image.html?/photos/uncategorized/20070227_1.jpg


2nd Gen - Low Vf - SBD Product Lineup

ROHM SiC SBD

★：Available for Automotive use ☆：Planning for Automotive use (schedule is not decided now .)

K A

A K A

K A N/C

As of Feb 24, 2014

2

650V 6A 8A 10A 12A 15A 20A 30A 40A Comment

TO220AC

SCS2□□AGC

TO220FM

SCS2□□AM

TO247

SCS2□□AEC

TO247

SCS2□□AE2C

Dual Chip

D2PAK

SCS2□□AJ

★

1200V 5A 10A 15A 20A 30A 40A Comment

TO220AC

SCS2□□KGC

TO247

SCS2□□KE2C

Dual Chip

★ ★ ★ ★ ★

★

★ ★

★

★ ★

★ ★

★ ☆ ☆

☆ ☆ ☆ ☆ ☆ ☆


On-going Projects of EV On Board Charger 3

In mass production

Design in

?

Europe

Japan

China North America

※Position of car icons does not imply the locations of the users in each region

ROHM SiC-SBD has a line up of automotive grade SiC-SBDs (Bare chip,TO220AC & TO247)

Several On Board Charger projects which use ROHM SiC-SBD are on going world wide

ROHM SiC SBD

As of Feb 24, 2014


2nd generation “low-VF” SiC-SBD

0.1～0.15V lower VF is achieved compared with 1G SBD

Forward characteristics （T=25˚C）

Forward characteristics （T=125˚C）

4

0123456789

10

0 0.5 1 1.5 2 2.5

Forward bias voltage (V)

Forw

ard

curr

ent

(A)

01

23

45

67

89

10

0 0.5 1 1.5 2 2.5

Forward bias voltage (V)

Forw

ard

curr

ent

(A)

ROHM

1st Gen SBD

ROHM

2nd Gen SBD ROHM

1st Gen SBD

ROHM

2nd Gen SBD

ROHM SiC SBD


2nd Gen DMOSFET Product Lineup

ROHM SiC MOSFET

SCHseries

Drain

Gate

Source

SBD MOSFET

SCTseries

Drain

Gate

Source

MOSFET

TO247 TO220AB

G D S

G D S

As of Feb 24, 2014

5

BVDSS P/N Package RDSon ID max SBD

1200V SCT2080KEC TO247 80mΩ 35A -

1200V SCH2080KEC TO247 80mΩ 35A Co-packed

1200V SCT2160KEC TO247 160mΩ 22A -

1200V SCT2280KEC TO247 280mΩ 14A -

1200V SCT2450KEC TO247 450mΩ 10A -

650V SCT2120AFC TO220AB 120mΩ 29A -


Turn-Off Loss

Eoff=890.2uJ

Ic (5A/div)

Vge (5V/div)

Vce (100V/div)

Tail current results in large switching loss

Worse at elevated temperatures

Eoff=109uJ

Id (5A/div)

Vgs (5V/div)

Vds (100V/div)

100ns

SCH2080KE

(SiC-MOS+SBD) IGBT+FRD

100ns

No tail current Tail current

6

ROHM SiC MOSFET

Eoff decreased by 88%

Small Rg (0-5Ω) is recommended for

high speed switching

(The device has high internal Rg)

Vdd=400V, Ic=20A, Ta=25℃

Vgs=+18V/0V, Rg external =5.6ohm


Eon=498.4uJ*includes diode recovery loss

Ic (5A/div)

Vge (5V/div)

Vce (100V/div)

Id (5A/div)

Vgs(5V/div)

Vds (100V/div)

100ns100ns

SiC-MOSFET+SBD(SCH2080KE)

Si-IGBT+FRD

Eon=331uJ*includes diode recovery loss

Turn-On Loss

SCH2080KE

(SiC-MOS+SBD)

Eon decreased by 34%

Large switching loss due to FRD’s

recovery current

Worse at elevated temperatures

Small Rg (0-5Ω) is recommended for

high speed switching

(The device has high internal Rg)

Vdd=400V, Ic=20A, Ta=25℃

Vgs=+18V/0V, Rg external =5.6ohm

ROHM SiC MOSFET

7

IGBT+FRD


Characteristics of Body Di of SiC-MOSFET

-5

0

5

10

15

20

25

0 50 100 150 200 250 300 350 400

time (ns)If (

A)

SCH2080KE

SCT2080KE

Vdd=400V

Ta=25℃

-30

-25

-20

-15

-10

-5

0

-10 -8 -6 -4 -2 0

Vgs=0V

Vgs=2V

Vgs=4V

Vgs=6V

Ta=25ºC

Pulsed

Vgs=10V

Vgs=14V

Vgs=18V

Dra

in C

urr

en

t : I D

[A

]

Drain - Source Voltage : VDS [V]

Vd- Id Characteristics (reverse direction) Reverse recovery waveform

MOS+SBD

MOS (body-diode)

As a wide-bandgap semiconductor,

Vf of body Di is high. But with its

gate turn-on, it gets much lower Vf

by reverse conduction

ROHM SiC MOSFET

Unlike Si MOSFET, SiC MOSFET

has a body Di with a quite small Trr

8


SiC-MOSFETs for Auxiliary Power Supplies

ROHM SiC MOSFET

9

BVDSS RDSon ID max (*Tentative) P/N Package Remarks

1200V 80mΩ 35A SCT2080KEC

TO247 MP 1200V 160mΩ 22A SCT2160KEC

1200V 280mΩ 14A SCT2280KEC

1200V 450mΩ 10A SCT2450KEC

1700V* 750mΩ*

~2.8Ω* 5.5A*~2A* - - Under Study

Inverter Converter

Converter

AC

100V

~400V Output

DC 5V~48V

(for system, etc,)

Block diagram of Inverter (Power supply, welding machine, etc,,）with auxiliary power supply

Fly back Forward

Sub

Main circuit

Circuit example

For auxiliary power supply circuit,

SiC-MOSFETs are better alternatives to

Si-MOSFETs with +1000V VDSS.

Etc…

In case of

AC400V input

Line up

These are target spec, so they might be changed or stopped without notice.

1>Downsize / reduction of heatsink

Due to lower power loss, SiC-MOSFETs reduce the

size of heatsinks.

than Si-MOS.

2>Better electrical performance

Lower Qg and capacitance of SiC –MOSFET than Si-

MOSFET brings better electrical performance

As of Feb 24, 2014


CEATEC AWARD 2013 Core Technology category Semi-Grand Prix 10

Collaboration：

Myway Plus Corporation

ALPS GREEN DEVICES CO.,LTD.

ROHM Co.,Ltd.

Bi directional DC-DC converter(5kW)

by ROHM’s SiC-MOSFET : SCT2120AF

90% Down-sizing!! Bi-directional converter

circuit example.


11 Reliability of SiC MOSFET

JEDEC qualification test does not cover SiC specific items such as Body diode

conduction - ROHM’s SiC-MOSFET’s have no reliability issue

Reliability of SiC MOSFET

TEST Condition SCT2080KE

HTGB Vgs=22V Ta=150℃

⊿Vth=+0.2~0.3V (1000h, n=1000)

Gate-Oxide

CCS-TDDB Ig=0.5~5mA/cm2 Qbd=15~20C/cm2

(Equivalent to Si-MOS)

Body-diode Conduction

Is=8A, Ta=25℃ Without any change (1000h, Pn=0/20)

Cosmic-Ray Ruggedness

(SEB)

Vds=1200V 4000m: 10FIT

0m: 0.5FIT


Single Event Burn-out (Cosmic ray)

Neutron-induced single event burn-out is

evaluated at Osaka university. Even at very high

Vds exceeding 1200V rated voltage, significantly

low failure rate was obtained.

Accelerated neutron beam (1～400MeV)

Radiation facility ：Osaka university (RCNP)

Flux : 1.0E+6 [neutron/cm2/sec]

ROHM’s SiC MOSFETs have outstanding robustness against cosmic ray,

which should be ideal property especially for high altitude applications

Sea Level (0m altitude)

1

10

100

1000

10000

1300 1350 1400 1450 1500 1550

Vds (V)

Failu

re r

ate

(FIT

)

C2M0080120D

SCT2080KE

Alps (4000m altitude)

10

100

1000

10000

100000

1300 1350 1400 1450 1500 1550

Vds (V)Failu

re r

ate

(FIT

)

C2M0080120D

SCT2080KE

0m: Φ=13 [neutron/cm2/h] 4000m: Φ=329 [neutron/cm2/h]

Reliability of SiC MOSFET

12


Full SiC Power Module

ROHM SiC Module

13

Package outline

BSM120D12P2C005

Spec

Rating voltage: 1200V

Rating current: 120A

Half bridge configuration

(SiC-DMOS, SiC-SBD)

Circuit diagram

BSM120D12P2C005

W: 122mm D: 45.6mm H: 21.1mm

BSM120D12P2C005

Unit : mm


BVDSS ID max P/N Size excludes pins Topology Status

1200V 120A BSM120D12P2C005 45.6 x 122 x 17 mm

2 in 1 in mass production

1200V 180A BSM180D12P2C101 2 in 1, MOS only

1200V (300A) (BSM00005A) (62 x 152 x 17 mm) 2 in 1 DS OK

1700V (250A) (BSM00015A) (62 x 152 x 17 mm) 2 in 1 Under Development

Inner Circuit Topology

BSM120D12P2C005

(BSM00001A)

(BSM00015A)

BSM180D12P2C101

※Figure and P/N in parentheses are tentative and subject to change

SiC MOSFET SiC SBD SiC MOSFET

Schedule is subject to change without notice

As of Feb 24, 2014

Product Lineup: SiC Power Module

ROHM SiC Module

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Thank you !

15

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