RIE/ICP=30/1500 W RIE/ICP=50/1500 W

RIE/ICP=70/1500 W RIE/ICP=100/1500 W

Other parameters are fixed as:Temperature 15’C, Pressure=30mTorr, SF6=80sccm, Ar=10sccm, Time=10min

36.8 um in 10min 33.1 um in 10min

35.7 um in 10min37.4 um in 10min

RIE/ICP=70/1500 W for 24min RIE/ICP=100/1500 W for 26min

• In both of these cases, the Ni was not fully attacked even after enough long time to remove all the Si.

• The color difference comes from the microscope contrast adjustment, but not the etching itself.

sapphireTi/Pd/Ti

Ni

Si

NiSix

RIE/ICP

sapphire

Ni

Si

NiSix

NiTi/Ni/Ti

Ti/Ni/Ti/Ni = 30/350/30/50 nmOverlap = 870 nm