rf is everywhere - expanding leadership in...
TRANSCRIPT
External Use
TM
RF is Everywhere - Expanding
Leadership in Wireless Applications
FTF-IND-F0112
A P R . 2 0 1 4
Leonard Pelletier | Applications Support
TM
External Use 1
Agenda
• Freescale RF Innovations
• Core Competencies
• Expanding Leadership into Adjacent Opportunities
• What You Can Expect From Freescale RF
• Freescale RF GaAs MMIC Applications
• More Web Resources
• Conclusions
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Freescale is Five Business Groups
Microcontrollers Automotive MCU
Analog & Sensors RF
Digital Networking
Airfast
MRF
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Freescale – Innovation Timeline
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Freescale RF – Early Innovations
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RF Worldwide Organization
RF Global Headquarters Tempe, Arizona
Design, Marketing, Applications, Modeling, Systems
Freescale Austin Corporate Headquarters
Oak Hill Fab – 8”
Freescale Toulouse Design, Marketing,
Modeling, Applications, Systems
Freescale Kuala Lumpur
Final Manufacturing
Freescale Tianjin Final Manufacturing
Freescale Shanghai Marketing, Applications
Freescale Chengdu Design , Applications
Freescale Tokyo Marketing, Application
Freescale Seoul Marketing, Application
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Freescale RF Leadership
• Freescale was the 1st to qualify a SiGe HBT BiCMOS process in 2000: 350 nm and 180 nm
• Freescale was the 1st to provide multi-stage integrated RF Power Amplifiers
• Pioneered Plastic Packaging for LDMOS Power Amplifiers
• 70% of mobile calls worldwide utilize Freescale technology/products
• Freescale owns 60% of global RF semiconductor device market
• Freescale breaks 1kW barrier with 50V LDMOS technology
• The largest global network of Application Engineers
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Freescale RF – Core Strengths
Semiconductor Technology Innovations in RF performance, power density, thermal
management, manufacturability, and cost.
Device Characterization and
Modeling
IP in sophisticated load-pull capabilities and methods
IP in semiconductor and package modeling: EM & Thermal
Packaging
Technology
Enabling cost-effective assembly and thermal dissipation,
while maintaining leadership RF performance and reliability.
Solutions
Development
•System Integration Circuit Optimization
•Partial/Fully Engineered Solutions to specific requirements
•Unique optimizations enabling competitive differentiation
Supply Chain Management •Consistently ranked as a top-tier
•Record of Dependability: 95% on-time delivery
Product
Reliability
Regarded as an Industry Benchmark
Freescale was the 1st to support hundreds of years MTBF
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Expanding Leadership Beyond Cellular Infrastructure
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RF Power Packages
Metal-Ceramic
Air Cavity Package Plastic TO Packages
PQFN Package PLD1.5 Package OMNI Packages
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Freescale RF: 2 product lines serving 8 markets
RF Cellular
• Picocells
• Pre-drivers
• Novel PA components
Small Signal RF
• Base Stations
• Repeaters
• From GSM to LTE
Cellular Power Amplifiers
RF Industrial
Military & Defense – US only
• Radar
• Military Comms
• Radio Navigation
• FM
• VHF TV
• UHF TV
Broadcast
• Handheld
• Vehicle
• Base stations
Land Mobile Radio
• Distance Measuring
• Transponders
• L- and S-band Radars
Commercial Aerospace
Heating
• Microwave Ovens,
commercial & consumer
• Industrial heating
• CO2 lasers
• Plasma generation
• MRI
• And a lot more
ISM (Industrial, Scientific, Medical)
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Freescale MMIC Solutions
Solutions Orientated
Leadership in RF Performance
Unparalleled Support Quality & Responsiveness
You can expect:
• Direct access to RF Applications Support
• Proven Solutions for specific requirements
• Complete Characterization Data
• Simulation Models (s-parameters / noise-
parameters
• Sample Kits
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Proven Turnkey Designs Reduce Design Cycle Times
Fully Optimized
Fully Characterized
Turnkey Designs
Start Your Designs
Fully Implemented Designs
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Freescale Solution Sets: Small-Cell Power Amplifiers
PA Output Power:
• 17 - 21 dBm Avg.
Required Line Up Gain:
• 25 – 35 dB
RF Final Stage Technology:
• 3 - 5V GaAs
Signal Conditioning and PA
Control Systems
• No Linearization
PA Output Power:
• 24 - 27 dBm Avg.
Required Line Up Gain:
• 30 – 40 dB
RF Final Stage Technology:
• 5V GaAs
Signal Conditioning and PA
Control Systems
• No Linearization
PA Output Power:
• 30 - 33 dBm Avg.
Required Line Up Gain:
• 40 – 50 dB
RF Final Stage Technology:
• 12V GaAs or 28V LDMOS
Signal Conditioning and PA
Control Systems
• Linearization Optional
PA Output Power:
• 40 - 43 dBm Avg.
Required Line Up Gain:
• 45 – 55 dB
RF Final Stage Technology:
• 28 V LDMOS
Signal Conditioning and PA
Control Systems
• Linearization Optional
Femto Indoor Pico Outdoor Pico Micro
5V GaAs 2-3 Stages
12V GaAs /
28V LDMOS 1 Stage
5V GaAs 2-3 Stages
3 - 5V GaAs 2-3 Stages
28V LDMOS 1 stage
12V GaAs 1 stage
5V GaAs 1-2 stages
OR
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PSC9131 Reference Design Board for Femtocell
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Linear PA QorIQ Qonverge
PSC9131/9132
LNA
Where Do Linear PAs and LNAs Live?
• Air Interface: − LTE
FDD/TDD
− WCDMA (HSPA+)
− CDMA2K
− TD-SCDMA
− WiMAX
B48XX
B48XX
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Device Technologies: RF Power Amplifiers
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LNA Device Technologies: OIP3 vs. NF
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Viable LNA Process Technologies
LNAs better suited to low power,
battery powered applications
LNAs better suited to high IP3,
low NF applications
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Pre-Driver Portfolio (General Purpose Amplifiers)
15
17
19
21
23
25
27
29
31
33
0 500 1000 1500 2000 2500 3000 3500
MMG3007N, 16 dBm, 0-6000 MHz, 19 dB gain, SOT−89
MMG3012N, 18.5 dBm, 0-6000 MHz, 19 dB gain, SOT−89
MMG3015N, 20.5 dBm, 40-6000 MHz, 15.5 dB gain, SOT−89
MMG3H21N, 20.5 dBm, 40-6000 MHz, 19.3 dB gain, SOT−89
MMH3111N, 22.5 dBm, 250-4000 MHz, 12 dB gain, SOT−89
MMG15241H, 24 dBm, 500-2800 MHz, 15.9 dB gain, SOT−89
MMG3014N, 25 dBm, 150-4000 MHz, 19.5 dB gain, SOT−89
MMG3004N, 27 dBm, 400-2200 MHz, 17 dB gain, PQFN 5x5
MMG20271H/H9 , 27.5 dBm, 1500-2700 MHz, 16 dB gain, QFN 3x3 / SOT-89
MMG3005N, 30 dBm, 200-24200 MHz, 15 dB gain, PQFN 5x5
MMG3006N, 33 dBm, 200-2400 MHz, 17.5 dB gain, QFN 4x4
Output Power (dBm, P1dB)
Frequency (MHz)
MMG20241H, 24dBm, 450-2800 MHz, 19dB gain, SOT-89
Production Execution
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RFMMIC Web Content
• MMIC Overview
• Performance − Performance data
− Links to product summary pages
− Access to datasheets
• Cross Reference
− Comprehensive competitive analysis
− Selection guides
• Design Support
− Design tools
− Simulation models
− CAD files
− Reference design documents
− Application notes
− Evaluation boards
www.freescale.com/rfmmic
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GaAs MMIC Designer Kit and Solutions Binder
5-10 loose samples of
each device in anti-static canisters
Designer Kit and GaAs Solutions
Binder are available online at
freescale.com/RFMMIC
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Support Resources
Data Sheets and
Application Notes:
freescale.com/RFMMIC
S-Parameters: freescale.com/RFMMIC > Design Support
Solutions Brochure: freescale.com/files/rf_if/doc/brochure/BR1609.pdf
Cross Reference freescale.com/files/rf_if/doc/quick_ref_guide/MMIC
GPAQRG.pdf
Samples and Kits: freescale.com/RFMMIC
Factory Application
Support:
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For more information on our GaAs portfolio, please visit our website at www.freescale.com/rfmmic
More Information
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In Addition to the Small Signal Device
Portfolio, Freescale Also has A Complete
Line-Up of Power RF Devices
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Agenda
• 50V Advancements
• Enhanced Ruggedness
• Broadcast Applications
• Industrial, Scientific and Medical Applications
• Commercial Aerospace Applications
• Land Mobile Products
• Core Advantages
• Conclusions
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Freescale RF Power Products Market Focus
Broadcast
Industrial, Scientific, Medical (ISM)
• Analog & Digital FM & TV
• HF/VHF Communication Equipment
• Shortwave Radio
• CO2 Laser
• Plasma Generation
• Synchrotron
• Magnetic Resonance Imaging (MRI)
Land Mobile
• Public Safety: Fire, Police
• Dispatch
• Security
• Marine VHF
Commercial Aerospace
• Air Traffic Management
• Transponder (ADS-B), DME
• Weather Radar
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Evolution of Freescale’s 50V LDMOS Technology
• EVHV6 is a 50V extension to Freescale’s widely accepted 50V LDMOS technology
• Key technology tailor-made for the Broadcast, Industrial, Scientific, Medical (ISM) & Commercial Aerospace markets
• Performance levels exceed those of competitive products
− High gain and efficiency figures
− Low thermal resistance simplifies cooling needed by the transmitter
− High Ruggedness improves reliability under adverse conditions
• Higher power density means more power per device... fewer devices per system!
− Significant cost and board space savings
• May 2010: Freescale’s latest innovation: Introducing 50V High Ruggedness Technology
• November 2010: Rugged, High Output Power Products: Up to 1250 W CW, 65:1 VSWR
• September 2011: Rugged, High Efficiency, High power UHF TV Broadcast: 600W Peak, 125W Avg 30% ηd
• June 2012: Rugged Wideband : Widest frequency range LDMOS part available from Freescale today:
− Full rated power from <1 MHz to >1500 MHz
• MRFE6VS25 is for both 25W @ 2-30 MHz and 30W @ 1300 MHz
• MRFE6VP100 is 100W @ 30-512 MHz and 115W @ 1300 MHz
2012
Wideband High
Ruggedness
2007 2008 2010 - 2011 2007
& Broadcast
2009
Extension
of Rugged
Device
Product
Line to
2GHz
2007 2007 2008 2009 2010-2011 2012
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Freescale Ruggedness Differentiator
• What is Ruggedness?
− The ability to perform reliably into extreme operating conditions
• Measures of Ruggedness
− VSWR – A ratio of the impedance mismatch between the device and it’s
operating load
− Energy Absorption (EA) – measure of ability to absorb energy applied to
the output terminal.
• Who needs it?
− Systems where normal operation is not into a matched load
Laser driver
Plasma generator
Broadcast Communications System
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The Ideal Power Amplifier
DC Power In
Waste Heat
(Power) Out
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Matched
Device and Load
Impedances
Mismatched
Device and Load
Impedances
Device Load
Reflected Power:
The amount of reflected power
is proportional to the
impedance mismatch.
Ruggedness Concept
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Sub-1GHz, 50V Selector Guide
50V LDMOS rugged
Plastic
50V LDMOS
43
45
47
49
51
53
55
57
59
0 100 200 300 400 500 600 700 800 900 1000
MRFE6VP61K25HMRF11K25
MRFE6VP5600H
AFV13350
MRFE6VP6300H
MRF5300
MRF5150
MRFE6VP100H
MRFE6VS25L/N
MRFE6VP8600H
MRF6VP3450H
MRF6VP3091N
Output Power
Frequency (MHz)
43
45
47
49
51
53
55
57
59
0 100 200 300 400 500 600 700 800 900 1000
MRFE6VP61K25HMRF11K25
MRFE6VP5600H
AFV13350
MRFE6VP6300H
MRF5300
MRF5150
MRFE6VP100H
MRFE6VS25L/N
MRFE6VP8600H
MRF6VP3450H
MRF6VP3091N
Output Power
Frequency (MHz)
25W
100W
300W
600W
1250W
150W
Output power (P1dB)
MRFE6VP3450H
MRF13350
MRF6V3090N/VP3091N
MRF1600
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Freescale rugged E Series A breakthrough product line for the RF Industrial market
• Benefits in cost savings, reliability and performance have sparked
an unprecedented response in the marketplace
− Dominate ISM and VHF Broadcast markets
− Major CO2 laser OEMs converted from VMOS
Parameter Rugged E series X device
Next Competitors
Devices
Which is
best?
Selection &
Availability 6 devices now
2 devices now (same part, different #)
VSWR 65:1 guaranteed 65:1 Typ
Efficiency 74.6 @ 230 MHz 70 @ 225 MHz
Thermal 10% lower than XR -
Stability
enhancements Yes No
Extended ESD
range Yes Yes
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ISM
(Industrial, Scientific, Medical)
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Industrial, Scientific and Medical Applications
RF Heating
CO2 Laser
RF Lighting
Food processing
Wood dryer
Synchrotron
Medical
Atmospheric Radar
Scientific
Instruments
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RF Power 2-860MHz Industrial Portfolio
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150 available reference designs in Industrial for faster TTM
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Broadcast Products
• Product Portfolio
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RF Power Broadcast Portfolio
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Avionics
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RF Power 900-3500 MHz Band Portfolio
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Landmobile Products
• Product Portfolio
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Freescale Land Mobile Values
• Freescale is the leader in land mobile RF power, with long
record of proven performance
• Full line of VHF and UHF devices from 4W to 75W
• All devices are >60% efficient at rated power, up to 70% mid
band.
• Gains between 13dB and 17dB
• 65:1 VSWR Ruggedness Capability
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Landmobile Device Portfolio
12.5V devices
7.5V devices
AFT09MS007N
PLD-1.5 W
MRF8P8/9300H
NI-1230 AFT05MP075
TO 272-WB-4 TO-270-WB-4
AFT09MP055N
TO-270-WB-4
AFT05MS031N
TO-270 AFT09MS031N
TO-270
AFT09MS015N
TO-270
AFT05MS004N
SOT-89
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AFT05MS004N
Applications: Mobile Radio Systems
− Designed for operation 136 – 941MHz
− 7.5Voperation
4W P1dB across 136-520 MHz
3W P1dB 609-941 MHz
− 3.6Voperation
>2W Psat across 136-941 MHz
− Gain: 16 dB nominal
− High efficiency: >60% broadband, >75%
narrowband
− Extreme Ruggedness 65:1VSWR
capable at 10.8V and 3dB overdrive
− Integrated ESD Protection
− Cost-effective Over-molded Plastic
AFT05MS004N
4W CW Power
Ideal for handheld radios
Integrated ESD protection
Characterized at 7.5V & 3.6V
Reference Designs available
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Proposed Product Line Up - Landmobile Radios
Devices GPA AFT05MS031N Totals
Typical Gain 29 dB 20 dB 50 dB
CW P1dB 0.35 W 35W 35 W
Drain Efficiency
@ P1dB 71%
Devices GPA MRF9MS4030N Totals
Typical Gain 29 dB 19 dB 48 dB
CW P1dB 1W 80W 80 W
Drain Efficiency
@ P1dB 70%
UHF 35W Performance Targets
UHF 80W Performance Targets
760 - 870 MHz 35W Performance Targets
Devices GPA AFT09MS031N Totals
Typical Gain 29 dB 16 dB 45 dB
CW P1dB 0.4 W 35 W 35 W
Drain Efficiency
@ P1dB 68%
12.5/13.6 V Mobile UHF Line Up 80W
GPA
MMZ09312
AFT05MP075N
High gain devices
eliminate stage
compared to previous designs
1-10mW
0 -10dBm
80W
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Freescale Advantages
• RF Performance • Ruggedness &
Reliability
• Design Support
• Efficiency
− Simplified Thermal
design
• High gain
− Simplifies lineup
• Linearity
• Broadband capability
− Reduce number of
products
• Comprehensive
Portfolio
− Industry leading
performance
− Low cost options
• Ruggedness
Enhancement
− VSWR survival > 65:1
under overvoltage
and input overdrive
condition
• Thermal Characteristics
− Significant reduction
in die junction
temperature
• Stability enhancements
− No compromise in
performance to
assure stability
• Dedicated Applications
Support
• ADS and AWR CAD
Models
• Reference Designs
• Loadpull
measurements
• Characterization for
linearity
• Thermal Modeling
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Conclusions
• Freescale is the leader in RF power devices
• A broad range of devices for all RF applications
• All devices are the RF performance leaders in their specific
designs
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Dec 2004: Motorola spins off Semiconductor Sector into independent company
RF FIRSTS
• 1st in RF power LDMOS
• 1st to develop industry standards in packaging
• 1st in high voltage IC
• 1st to support hundreds of years MTTF
• 1st high power discrete with integrated die matching
• 1st to offer manufacturing in standard, high-volume CMOS fabs
• 1st to install ESD protection on RF devices
• 1st with on-Line production test data availability
• 1st with complete and accurate ADS MET modeling characterization
• 1st with a 500 MHz, 1 KW CW 50V LDMOS device, MRF6VP41K
• 1st with a High VSWR capable device, 65:1 VSWR
• 1st to brand high power RF – Airfast
• 1st with an over-molded package in standard air cavity footprints
THANK YOU – Be A First With Us!
TM
1930 1st Motorola Brand Car Radio
1939 1st 2-Way Radio Equipment
1940 WWII “Handie-Talkie”
1947 1st CRT TV
1969 Neil Armstrong
1973 1st Portable Telephone
1983 1st Cellular Phone
1991 1st Digital Cellular (GSM)
2002 1st WiFi Cable Modem Gateway
TM
© 2014 Freescale Semiconductor, Inc. | External Use
www.Freescale.com