rapid switching emitter controlled diode · 5 idw40e65d1 emitter controlled diode rapid 1 series...

DiodeRapid�Switching�Emitter�Controlled�Diode

IDW40E65D1Emitter�Controlled�Diode�Rapid�1�Series

Data�sheet

Industrial�Power�Control

2


Rev.�2.2,��2013-12-16

Rapid�Switching�Emitter�Controlled�Diode�Features:

•�650�V�Emitter�Controlled�technology•�Temperature�stable�behaviour�of�key�parameters•�Low�forward�voltage�(VF)•�Ultra�fast�recovery•�Low�reverse�recovery�charge�(Qrr)•�Low�reverse�recovery�current�(Irrm)•�Softness�factor�>1•�175�°C�junction�operating�temperature•�Pb-free�lead�plating;�RoHS�compliant

Applications:

•�AC/DC�converters•�Boost�diode�in�PFC�stages•�Free�wheeling�diodes�in�inverters�and�motor�drives•�General�purpose�inverters•�Switch�mode�power�supplies

Package�pin�definition:

•�Pin�1�-�not�connected•�Pin�2�and�backside�-�cathode•�Pin�3�-�anode

A

C

12

3

Key�Performance�and�Package�ParametersType Vrrm If Vf,�Tvj=25°C Tvjmax Marking PackageIDW40E65D1 650V 40A 1.35V 175°C E40ED1 PG-TO247-3

3


Rev.�2.2,��2013-12-16

Table�of�Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4


Rev.�2.2,��2013-12-16

Maximum�RatingsFor�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.

Parameter Symbol Value UnitRepetitive peak reverse voltage VRRM 650 VDiode�forward�current,�limited�by�TvjmaxTC�=�25°CTC�=�100°C

IF 80.040.0

A

Diode�pulsed�current,�tp�limited�by�Tvjmax IFpuls 120.0 ADiode surge non repetitive forward currentTC�=�25°C,�tp�=�10.0ms,�sine�halfwave IFSM 320.0 A

Power�dissipation�TC�=�25°C Ptot 179.0 WOperating junction temperature Tvj -40...+175 °CStorage temperature Tstg -55...+150 °CSoldering temperature,wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

Thermal�Resistance

Parameter Symbol Conditions Max.�Value UnitCharacteristic

Diode thermal resistance,1)

junction - case Rth(j-c) 0.84 K/W

Thermal resistancejunction - ambient Rth(j-a) 40 K/W

Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

Static�Characteristic

Diode forward voltage VF

IF�=�40.0ATvj�=�25°CTvj�=�125°CTvj�=�175°C

---

1.351.321.28

1.70--

V

Reverse leakage current IRVR�=�650VTvj�=�25°CTvj�=�175°C

--

--

40.04000.0

µA

Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.


Dynamic�Characteristic

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.

5


Rev.�2.2,��2013-12-16

Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


Diode�Characteristic,�at�Tvj�=�25°C

Diode reverse recovery time trr - 77 - nsDiode reverse recovery charge Qrr - 0.87 - µCDiode peak reverse recovery current Irrm - 17.5 - ADiode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -1520 - A/µs

Tvj�=�25°C,VR�=�400V,IF�=�40.0A,diF/dt�=�1000A/µs



Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


Diode�Characteristic,�at�Tvj�=�175°C/125°C





6


Rev.�2.2,��2013-12-16

Figure 1. Power�dissipation�as�a�function�of�casetemperature(Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

Ptot ,�POWER�DISSIPATION�[W

]

25 50 75 100 125 150 1750

20

40

60

80

100

120

140

160

180

Figure 2. Diode�forward�current�as�a�function�of�casetemperature(Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

IF ,�FORWARD�CURRENT�[A]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

Figure 3. Diode�transient�thermal�impedance�as�afunction�of�pulse�width(D=tp/T)

tp,�PULSE�WIDTH�[s]

Zth(j -c

) ,�TR

ANSIENT�TH

ERMAL�RESISTA

NCE�[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0158991.9E-5

20.199422.4E-4

30.238811.9E-3

40.345930.01162857

50.0362180.0912415

62.8E-31.815212

Figure 4. Typical�reverse�recovery�time�as�a�function�ofdiode�current�slope(VR=400V)

diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]

trr,�R

EVERSE�RECOVERY�TIME�[ns]

200 600 1000 1400 1800 2200 2600 30000

20

40

60

80

100

120

140

160

180

200Tj=25°C, IF = 40ATj=125°C, IF = 40ATj=175°C, IF = 40A

7


Rev.�2.2,��2013-12-16

Figure 5. Typical�reverse�recovery�charge�as�a�functionof�diode�current�slope(VR=400V)


Qrr,�R

EVERSE�RECOVERY�CHARGE�[µC]

200 600 1000 1400 1800 2200 2600 30000.0

0.5

1.0

1.5

2.0

2.5

3.0Tj=25°C, IF = 40ATj=125°C, IF = 40ATj=175°C, IF = 40A

Figure 6. Typical�peak�reverse�recovery�current�as�afunction�of�diode�current�slope(VR=400V)


Irrm,��REVERSE�RECOVERY�CURRENT�[A]

200 600 1000 1400 1800 2200 2600 30000

5

10

15

20

25

30

35

40


Figure 7. Typical�diode�peak�rate�of�fall�of�reverserecovery�current�as�a�function�of�diodecurrent�slope(VR=400V)


dIrr/dt,�diode�peak�ra

te�of�fall�of�I

rr�[A

/µs]

200 600 1000 1400 1800 2200 2600 3000-2500

-2250

-2000

-1750

-1500

-1250

-1000

-750

-500

-250


Figure 8. Typical�diode�forward�current�as�a�function�offorward�voltage

VF,�FORWARD�VOLTAGE�[V]

IF ,�FORWARD�CURRENT�[A]

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.000

10

20

30

40

50

60

70

80Tj=25°CTj=175°C

8


Rev.�2.2,��2013-12-16

Figure 9. Typical�diode�forward�voltage�as�a�function�ofjunction�temperature

Tvj,�JUNCTION�TEMPERATURE�[°C]

VF ,�FO

RWARD�VOLT

AGE�[V

]

0 25 50 75 100 125 150 1750.50

0.75

1.00

1.25

1.50

1.75

2.00IF=10AIF=20AIF=40AIF=60AIF=80A

9


Rev.�2.2,��2013-12-16

PG-TO247-3

10


Rev.�2.2,��2013-12-16

t

a

a

b

b

td(off)

tf trtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

vGE

(t)

t

t

iC(t)

vCE(t)

90% VGE

vGE(t)

t

t

iC(t)

vCE(t)

tt1 t4

2% IC

10% VGE

2% VCE

t2 t3

E

t

t

V I toff

= x x d

1

2

CE C∫ Et

t

V I ton

= x x d

3

4

CE C∫

CC

11

IDW40E65D1

Emitter Controlled Diode Rapid 1 Series

Rev. 2.2, 2013-12-16

Revision History

IDW40E65D1

Revision: 2013-12-16, Rev. 2.2

Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2013-03-13 Preliminary data sheet

2.1 2013-10-21 Final data sheet

2.2 2013-12-16 New Marking Pattern

We Listen to Your CommentsAny information within this document that you feel is wrong, unclear or missing at all ?Your feedback will help us to continuously improve the quality of this document.Please send your proposal (including a reference to this document) to: [email protected]

Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2014 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding theapplication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systemsand/or automotive, aviation and aerospace applications or systems only with the express written approval of InfineonTechnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Lifesupport devices or systems are intended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may beendangered.

Table of ContentsMaximum RatingsThermal ResistanceElectrical Characteristics (Static)Electrical Characteristics (Dynamic)Switching Characteristic, Inductive Load, at Tj lowDiode Characteristic, at Tj lowSwitching Characteristic, Inductive Load, at Tj highDiode Characteristic, at Tj highChartsChartsChartsPackage DrawingTesting ConditionsRevision HistoryDisclaimer

rapid switching emitter controlled diode · 5 idw40e65d1 emitter controlled diode rapid 1 series...

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