pt(115) - y. hwu, d.y. noh q.d. - c.-h. hsu, y.p. stetsko x-ray microscopy - g.c. yin, m.t. tang,...
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![Page 1: Pt(115) - Y. Hwu, D.Y. Noh Q.D. - C.-H. Hsu, Y.P. Stetsko X-ray Microscopy - G.C. Yin, M.T. Tang, Y.F. Song Coherent Scattering – R. Dronyak, Y.P. Stetsko](https://reader035.vdocuments.site/reader035/viewer/2022062518/56649d415503460f94a1c800/html5/thumbnails/1.jpg)
Pt(115) - Y. Hwu, D.Y. NohQ.D. - C.-H. Hsu, Y.P. Stetsko
X-ray Microscopy - G.C. Yin, M.T. Tang, Y.F. SongCoherent Scattering – R. Dronyak, Y.P. Stetsko
Keng Liang 梁耕三
National Synchrotron Radiation Research Center
I. Surface X-Ray ScatteringII. Recent Progress on Nano Probes at NSRRC
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Grazing Incidence X-ray Scattering
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Equilibrium Crystal Shape
An ECS of face center cubic crystal of simple metals
The ECS of platenum. There are (117), (2 2 17), and (1 1 13) facets in addition to the (001) facet.
(Pt)
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Magic VicinalsMagic Vicinals
Au (117) Au (115) + Au (1,1,11)
Terrace Width : 3.5 atoms 2.5 atoms 5.5 atoms
Bartolini et. al, Physical Review Letters, 63 872 (1989)
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0
1
2
T = 873 K< 115 >
< 552 >
Q
z (r.
l.u.) (002)
(002)
0 10
1
2
T = 973 K
Qx (r.l.u.)
< 115 >
< 552 >
Qz (
r.l.u
.)
0.2 0.40
1 Qz = 0.9
Qx (r.l.u.)
Inte
nsity
(a.
u.)
0.2 0.40
1 Qz = 1.2
Qx (r.l.u.)
Inte
nsity
(a.
u.)
abc
800 1000 1200
1E-3
0.01
0.1
Temperature (K)
Inte
nsity
(a.
u.)
abc
8
12
16
20
(de
gree
s)
< 117 >
< 115 >
< 2 2 17 >
< 1 1 13 >
Peak positions of X-ray reflection measured from a Pt(115) surface. Insets: intensities of X-ray scans in the <-5, -5, 2> direction at a given Qz.
The upper panel: the measured angles of the CTR’s with respect to the <001> direction. The bottom panel: the intensity variations of the <1 1 13> facet and the γ-CTR.
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T > 1198 K
T 1073 K
T 1073 K
T 963 K
T 773 K
Schematic surface topologies of the Pt(115) at representative temperatures. The arrows indicated as α, β, and γ are the surface normals.
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Uncapped In0.5Ga0.5As Quantum Dots
In0.5Ga0.5As 5.85 ML/ Ga (4x2)
AFM image
n ~ 5 x1010 cm-2
J. Cryst. Growth, 175/176, 777 (1997).
Grown by MEE
aInAs = 6.0583Å aGaAs = 5.65325Å
misatch = 7.2 %
grown @ 520oC 0.7 ML/s.
GaAs buffer layer 200 nm
GaAs (001)
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narrow size distribution uniform shape
Issues of Interest
shape, strain, and compositional profile
coherent (dislocation free) dots
Self-assembled coherent QDs grown by MBE
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Grazing Incidence Reciprocal Space Mapping of surface Bragg peak
Reproduced from PRL 85, 1694 (2000) by I.Kegel et al.
a) Scattering processes for a particular region of constant lateral lattice parameter at height z above the substrate.b) Simulated intensity distribution close to a surface Bragg-reflection (hk0), RSM.c) f-intensity distribution at the selected iso-strain area. Its height z is calculated from the angle of maximum intensity.
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Structure factors for weak “-” and strong “+” even reflectionsStructure factors for weak “-” and strong “+” even reflections
DispersiveDispersive resonant x-ray diffraction techniqueresonant x-ray diffraction technique
Schematic representation of scattering properties of qu
antum dot iso-strain slabs
),()1(),(),,( GaAsInAsInGaAs EFxExFxEF QQQ )],(),()1(),([4 EfEfxExf AsGaIn QQQ
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Electron Binding Energies
UV
Soft X-ray
Hard X-ray
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Anomalous X-ray Scattering
Chemical composition and/or electronic states
Atomic scattering factor f (q,E)= f0(q) + f’(E)+ i f”(E)= f1+i f2
Intensity
E/Eedge
f1
f2
22
iHKL rqi
iiHKL efFI
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Structure factors for weak “-” and strong “+” even reflectionsStructure factors for weak “-” and strong “+” even reflections
DispersiveDispersive resonant x-ray diffraction techniqueresonant x-ray diffraction techniqueExtreme compositional (Extreme compositional (xx) sensitivity of weak reflections) sensitivity of weak reflections
Schematic representation of scattering properties of
quantum dot iso-strain slabs
),()1(),(),,( GaAsInAsInGaAs EFxExFxEF QQQ )],(),()1(),([4 EfEfxExf AsGaIn QQQ
-1.0 -0.5 0.0
1E-4
1E-3
0.01
Energies
-1.2-10
-6.2 -3.7
10.368 keV10.35 keV10.2 keV7.75 keV
qr (nm-1)
Inte
nsity
Radial intensity distributions I(qr) measured f
or several energies of the incident radiation
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DAFS measurements of InGaAs/GaAs quantum dotsDAFS measurements of InGaAs/GaAs quantum dots
Theoretical I(E) distributions for weak (200) and strong (400) reflections calculated for different compositions x
10.3 10.4
1
10
100
Energy E (keV)
10.3 10.4
-8
-4
0
4
Ga K-edge
f /
f //
E (keV)
Ele
ctro
ns
x = 0.4 (400)
x = 0.1 (400)x = 0.4 (200)
x = 0.1 (200)
Nor
mal
ized
inte
nsit
y
10.3 10.40.01
0.1
1
10
Energy E (keV)
(0.24; 0.07)
(0.375; 0.05)
(0.48; 0.03)
(0.54; 0.02)
(0.31; 0.06)
(x = 0.13, x = 0.08)
- 0.275
- 0.33
- 0.44
- 0.55
- 0.22
qr = - 0.11 nm-1
Inte
nsity
(a.
u.)
Experimental I(E) distributions measured at different radial qr positions for the weak (200) refle
ction
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Height reconstruction of InGaAs/GaAs quantum dots Height reconstruction of InGaAs/GaAs quantum dots
Reconstructed height-dependent distributions of the composition x, lateral lattice parameter a and lateral size S of quantum dots. Region (I) [0 < h < hC] - compressed mate
rial, and region (II) [h > hC] - tensile material.
)/()( GaAsInAsGaAs aaaaa
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AFM images of InAs/GaAs(001) quantum rings
Self-assembled InAs/GaAs quantum ringsSelf-assembled InAs/GaAs quantum rings
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Electron Binding Energies
UV
Soft X-ray
Hard X-ray
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Photon-In/ Photon-Out ExperimentsPhoton-In/ Photon-Out Experiments
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Orbital ordering in TMO’s
Orbital ordering in TMO’s
Mn3+
Mn4+
Charge contour of La0.5Sr1.5MnO4
Orbital ordering in La0.5Sr1.5MnO4 is dominated by (z2- x2)/ (y2- z2), rather than (3x2- r2 )/(3y2- r2 ), in contrast to the current understanding.
EPU Beamline (60-1500 eV)
Spin-resolved Photoelectron Spectroscopy Station
Soft X-ray Magnetic Scattering Station
PEEM Station
Charge, Spin, Orbital, LatticeCharge, Spin, Orbital, Lattice
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Low EmittanceLow Emittance
TLS(1.5 GeV)
Beamline
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國際間中、高能量同步加速器光源設施
( ): distributed dispersion 1: separated function, nonlinear optimization is under study 2: combined function, nonlinear optimization is under study
931104-15
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同步加速器設施聚頻磁鐵光亮度比較(TLS, TPS, Diamond, SLS, SPring-8)
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Lateral resolution [nm]
Ch
emic
al in
form
atio
n
A. Hitchcock
Photoelectrons, Spectromicroscopy Nano Fabrication
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XY ScanController
U5 Undulator Refocusing Mirror
SGMPinhole
Order Sorting Aperture
Zone PlateSample Flexure Stage
e-
h
x y
e-
e-
Schematic of SRRC-SPEM at U5 Beamline
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W. Yun
Fresnel Zone Plates
SPEM
X-ray microscope in development
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Zone Plate
Focus
Zone Plate Zone Plate EquationEquationss
rrnn = ( = ( n n ff ))1/21/2
ddmm = 1.22 = 1.22ddrrn n //mm
f : f : focal lengthfocal length nn : : zone index zone index : wavelength: wavelength mm : diffraction order : diffraction order r : radius of the zone plater : radius of the zone plate drdrnn: outermost zone width: outermost zone width
ffmm = = 2 r dr / 2 r dr / ((mm ))
Spatial ResolutionSpatial Resolution
Zone Radius Zone Radius
Focal LengthFocal Length
Numerical ApertureNumerical Aperture NA NA = = / ( / (2 dr)2 dr)
When NA <<1, the ZP can be treated like an ordinary refractive lens, When NA <<1, the ZP can be treated like an ordinary refractive lens, i.e., 1/q + 1/p = 1/f and M = p/q.i.e., 1/q + 1/p = 1/f and M = p/q.
Zone plate consists of concentric rings (zones) with zone width Zone plate consists of concentric rings (zones) with zone width decreasing with radius. decreasing with radius.
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Zone plate optical systemZone plate optical system Condenser TubeCondenser Tube
Monochromatic X-raysMonochromatic X-rays
Nano-TXM (optical)Nano-TXM (optical)
10 cm
Ion ChamberIon Chamber
Phase RingPhase Ring
Sample mount and sample Sample mount and sample manipulation systemmanipulation system
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CondenserCondenser
Experimental Experimental Hutch wallHutch wall
Source : SWLS, 5T, Source : SWLS, 5T, EcEc=7.5 kev=7.5 kev
FM : MFM : M1/11/1
DCM : Ge(111) DCM : Ge(111) E/E E/E 10 10-3-3
EE=8-11 keV =8-11 keV
SampleSample
Objective Zone PlateObjective Zone Plate
CCD CCD
Beam StopperBeam Stopper
I0 monitorI0 monitor
Phase RingPhase Ring
PinholePinhole
Optical Layout of NSRRC nano-TXMOptical Layout of NSRRC nano-TXM
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Phase contrast helps.Phase contrast helps.
E(z)=E0e-i2(--i) z/ =E0ei2z/ -2z/
I(z) |E(z)|2 I0e4z/
Absorption contrast z= 4z/ 3
Phase contrast(z)=2z/
zRefraction index : n = 1--i
Hendrickson Criterion
Water window
G. Schneider (1998)Schematic of Zernike phase contrast.
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Result (1)~First orderResult (1)~First order
Inner line width: 50nm
Tested At 8 & 11 keV
Exposure time: 15 secs
Resolution: Better than 60nm
Spoke pattern
Fov: 15um x 15um
3um
At 8 and 11 keV
Exposure time: 15 mins
Resolution: Better than 30nm
Fov: 5um x 5um
5um
Spoke pattern
Result (2) Third orderResult (2) Third order
3um
5um
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Phase retrieval of diffraction patterns using the oversampling method
Iterative phase retrieval algorithm
Sayre D., Acta Crystallogr. 5, 843 (1952).Gerchberg R. Saxton W., Optik 35, 237-46 (1972).Fienup J., Opt. Lett. 3, 27-9 (1978).Miao J. at al., Nature. 400, 342-344 (1999).
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Importance of phase information
1 object
2 object
FFT
FFT
Intensity
Intensity
Phase
Phase
FFT -1
FFT -1
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Simulated case
Simulated X-ray diffraction pattern
2D object
Examples of images retrieved using iterative phasing method with labels showing the number of iterations in each image
i = 10 i = 100
i = 250 i = 500
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3D imaging of nanostructuresJohn Miao et al., Phys. Rev. Lett. 89, 088303 (2002).
(a) A SEM image of a double-layered sample made of Ni (~2.7 x 2.5 x 1 m)
(b) A coherent diffraction pattern from (a) (the resolution at the edge is 8nm)60×60 area of missing data at the center
(c) An image reconstructed from (b) An iso-surface rendering of the reconstructed 3D structure
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用戶年會參與人數趨勢圖
0
50
100
150
200
250
300
350
400
450
500
550
1995 1996 1997 1998 1999 2000 2001 2002 2003 2004
年份
人數
0
25
50
75
100
125
150
175
壁報數
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0
5
10
15
20
25
30
Num
ber
of b
eam
lines
1994 1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 20080
20
40
60
80
100
120
140
160
180
200
Bio.
Total
I.F. > 2
Num
ber
of p
ublic
atio
ns
year
量的方面 : SCI 論文總數 200 生物領域 30%
質的方面 : Impact Factor > 6 10% > 2 60%
預計至 2008 年達成之目標
論文成長與光束線數成正比用戶成長潛力即將受限於設施之飽和
1995 1996 1997 1998 1999 2000 2001 2002 2003 2004
0
2
4
6
8
10
12
Bio.
Total
I.F. >6
Year
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X-ray Research
Year
1994 1996 1998 2000 2002 2004 2006 2008
No.
of
oper
atio
nal b
eam
line
0
2
4
6
8
10
12
14N
o. o
f pu
blic
atio
n
0
20
40
60
80
100
I.F. >2
superconducting IDs