proton-electrotex · 2020. 11. 12. · proton-electrotex electrically isolated base plate...

PROTON-ELECTROTEX

Electrically isolated base plateIndustrial standard package Simplified mechanical design, rapid assemblyPressure contact

Single Thyristor ModuleFor Phase ControlMT1-650-12-B0

Mean on-state current ITAV 650 A

Repetitive peak off-state voltage VDRM1000 1200 V

Repetitive peak reverse voltage VRRM

Turn-off time tq 160 s

VDRM, VRRM, V 1000 1100 1200Voltage code 10 11 12Tj, C – 40 140

MT1

All dimensions in millimeters (inches)

2019-Apr-22 v0.2 © Proton-Electrotex Data Sheet MT1-650-12-B0 page 1 of 12

MAXIMUM ALLOWABLE RATINGS

Symbols and parameters Units Values Test conditions

ON-STATEITAV Mean on-state current A 650 Tc=85 C;

180 half-sine wave; 50 HzITRMS RMS on-state current A 1020

ITSM Surge on-state current kA

14.016.0

Tj=Tj max

Tj=25 C

180 half-sine wave; tp=10 ms; single pulse;VD=VR=0 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s

15.017.0

Tj=Tj max

Tj=25 C

180 half-sine wave; tp=8.3 ms; single pulse;VD=VR=0 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s

I2t Safety factor A2s.103

9801280

Tj=Tj max

Tj=25 C

180 half-sine wave; tp=10 ms; single pulse;VD=VR=0 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s

9301190

Tj=Tj max

Tj=25 C

180 half-sine wave; tp=8.3 ms; single pulse;VD=VR=0 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s

BLOCKING

VDRM, VRRMRepetitive peak off-state and Repetitive peak reverse voltages V 10001200

Tj min< Tj <Tj max;180 half-sine wave; 50 Hz;Gate open

VDSM, VRSMNon-repetitive peak off-state and Non-repetitive peak reverse voltages V 11001300

Tj min< Tj <Tj max;180 half-sine wave; single pulse; Gate open

VD, VRDirect off-state andDirect reverse voltages V

0.6.VDRM

0.6.VRRM

Tj=Tj max;Gate open

TRIGGERINGIFGM Peak forward gate current A 8

Tj=Tj maxVRGM Peak reverse gate voltage V 5PG Gate power dissipation W 4 Tj=Tj max for DC gate currentSWITCHING

(diT/dt)crit

Critical rate of rise ofon-state currentnon-repetitive (f=1 Hz)

A/s 400Tj=Tj max; VD=0.67.VDRM; ITM=2 ITAV;Gate pulse IG=2 A; tGP=50 s; diG/dt≥2 A/s

THERMALTstg Storage temperature C -40 50Tj Operating junction temperature C -40 140MECHANICALa Acceleration under vibration m/s2 50


CHARACTERISTICS

Symbols and parameters Units Values Conditions

ON-STATEVTM Peak on-state voltage, max V 1.40 Tj=25 C; ITM=1978 AVT(TO) On-state threshold voltage, max V 0.85 Tj=Tj max;

0.5 ITAV < IT < 1.5 ITAVrT On-state slope resistance, max m 0.280

IL Latching current, max mA 1000Tj=25 C; VD=12 V;Gate pulse IG=2 A; tGP=50 s; diG/dt≥1 A/s

IH Holding current, max mA 300Tj=25 C;VD=12 V; Gate open

BLOCKING

IDRM, IRRMRepetitive peak off-state and Repetitive peak reverse currents, max mA 70

Tj=Tj max;VD=VDRM; VR=VRRM

(dvD/dt)crit Critical rate of rise of off-state voltage1), min

V/s 1000 Tj=Tj max;VD=0.67.VDRM; Gate open

TRIGGERING

VGT Gate trigger direct voltage, max V4.002.502.00

Tj= Tj min Tj=25 CTj= Tj max VD=12 V; ID=3 A;

Direct gate current

IGT Gate trigger direct current, max mA400250200

Tj= Tj min

Tj= 25 CTj= Tj max

VGD Gate non-trigger direct voltage, min V 0.25 Tj=Tj max; VD=0.67.VDRM;Direct gate currentIGD Gate non-trigger direct current, min mA 10.00

SWITCHING

tgd Delay time s 2.00

Tj=25 C; VD=600 V; ITM=ITAV; di/dt=200 A/s;Gate pulse IG=2 A; VG=20 V; tGP=50 s; diG/dt=2 A/s

tq Turn-off time2), max s 160dvD/dt=50 V/s; Tj=Tj max; ITM= ITAV;diR/dt=10 A/s; VR=100V;VD=0.67 VDRM;

Qrr Total recovered charge, max C 1170 Tj=Tj max; ITM=650 A;diR/dt=-10 A/s;VR=100 V

trr Reverse recovery time, max s 19IrrM Peak reverse recovery current, max A 123THERMAL

RthjcThermal resistance, junction to case

180 half-sine wave, 50 Hzper module C/W 0.0620

RthchThermal resistance, case to heatsink

per module C/W 0.0100INSULATION

VISOL Insulation test voltage kV3.00 Sine wave, 50 Hz;

RMSt=1 min

3.60 t=1 secMECHANICALM1 Mounting torque (M6)3) Nm 6.00 Tolerance 15%M2 Terminal connection torque (M10)3) Nm 12.00 Tolerance 15%w Weight, max g 900


PART NUMBERING GUIDE NOTES

MT 1 - 650 - 12 - A2 T2 - B0 - N1 2 3 4 5 6 7 8

1. Thyristor module (MT)2. Circuit Schematic3. Average On-state Current, A4. Voltage Code5. Critical rate of rise of off-state voltage6. Group of turn-off time (dvD/dt=50 V/s)7. Package Type (M.B0)8. Ambient Conditions: N – Normal

1) Critical rate of rise of off-state voltageSymbol of group A2(dvD/dt)crit, V/s 1000

2)Turn-off time (dvD/dt=50 V/s)Symbol of group T2

tq, s 160

3) The screws must be lubricated

The information contained herein is confidential and protected by CopyrightIn the interest of product improvement, Proton-Electrotex reserves the right to change data sheet without notice.


0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,40

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

On

— s

tate

cur

rent

- I

TM, A

On — state voltage - VTM

, V

MT1

-650

-B0,

22-

Apr-

201925 °C

140 °C

Fig 1 – On-state characteristics of Limit device

Analytical function for On-state characteristic:

TTTT iDiCiBAV )1ln(

Coefficients for max curvesTj = 25oC Tj = Tj max

A 0.78716000 0.56998000B 0.00019322 0.00026256C 0.03287700 0.04592500D -0.00044410 -0.00063590

On-state characteristic model (see Fig. 1)


0,00001 0,00010 0,00100 0,01000 0,10000 1,00000 10,00000 100,000000,00001

0,00010

0,00100

0,01000

0,10000

Per arm: 0.062 K/W

Time — t, s

MT1

-650

-B0,

22-

Apr-

2019

Tran

sien

t th

erm

al im

peda

nce

— Z

thjc, K

/W

Fig 2 – Transient thermal impedance Zthjc vs. time t

Analytical function for Transient thermal impedance junction to case Zthjc for DC:

n

i

t

ithjcieRZ

1

1

Where i = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

Zthjc = Thermal resistance at time t.

Ri = Amplitude of pth term.

i = Time constatnt of rth term.

i 1 2 3 4 5 6Ri, K/W 0.0318699 0.0112 0.01635 0.0006528 0.001791 0.0001363i, s 3.132 1.000 0.2335 0.01038 0.002348 0.0002448

Transient thermal impedance junction to case Zthjc model (see Fig. 2)


Fig 3 – Gate characteristics – Trigger limits

Fig 4 - Gate characteristics – Power curves


1 10 100100

1000

10000

Commutation rate - di/dt, A/μss

Reco

vere

d ch

arge

- Q

rr-i,

μsC

Tj = 140 °C

ITM

= 650 A

MT1

-650

-B0,

22-

Apr-

2019

Fig 5 – Maximum recovered charge Qrr-i (integral) vs. commutation rate diR/dt

1 10 100100

1000

10000


Reco

vere

d ch

arge

- Q

rr, μs

C

MT1

-650

-B0,

22-

Apr-

2019

Tj = 140 °C

ITM

= 650 A

Fig 6 – Maximum recovered charge Qrr vs. commutation rate diR/dt (25% chord)


1 10 10010

100

1000


Reve

rse

reco

very

cur

rent

- I

rrM

, A

MT1

-650

-B0,

22-

Apr-

2019 T

j = 140 °C

ITM

= 650 A

Fig 7 – Maximum reverse recovery current IrrM vs. commutation rate diR/dt

1 10 10010

100


Reve

rse

reco

very

tim

e -

trr,

μss

Tj = 140 °C

ITM

= 650 A

MT1

-650

-B0,

22-

Apr-

2019

Fig 8 – Maximum recovery time trr vs. commutation rate diR/dt (25% chord)


0 100 200 300 400 500 600 700 800 900 1000 11000

200

400

600

800

1000

1200

1400

1600

MT1

-650

-B0,

22-

Apr-

2019

Mean on-state current — IT(AV)

, A

Mea

n on

-sta

te p

ower

dis

sipa

tion

— P

T(A

V),

W

Ѳ=30º

Ѳ=60º

Ѳ=90º

Ѳ=120º

Ѳ=180º

Ѳ - angle of conduction Sinusoidal current waveforms

Fig. 9 - Mean on-state power dissipation PTAV vs. mean on-state current ITAV for sinusoidal currentwaveforms at different conduction angles (f=50Hz, DSC)

0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 15000

200

400

600

800

1000

1200

1400

1600

1800

2000

MT1

-650

-B0,

22-

Apr-

2019

Mean on-state current — IT(AV)

, A

Mea

n on

-sta

te p

ower

dis

sipa

tion

— P

T(A

V),

W

Ѳ=30º

Ѳ=60º

Ѳ=90º

Ѳ=120º

Ѳ=180º

Ѳ - angle of conduction Rectangular current waveforms

DC

Fig. 10 – Mean on-state power dissipation PTAV vs. mean on-state current ITAV for rectangular currentwaveforms at different conduction angles and for DC (f=50Hz, DSC)


25 35 45 55 65 75 85 95 105 115 125 1350

100

200

300

400

500

600

700

800

900

1000

1100

1200

MT1

-650

-B0,

22-

Apr-

2019

Case temperature — TC, ˚C

Mea

n on

-sta

te c

urre

nt —

IT

(AV

), A

Ѳ=30º

Ѳ=60º

Ѳ=90º

Ѳ=120º

Ѳ=180º

Ѳ - angle of conduction Sinusoidal current waveforms

Fig. 11 – Mean on-state current ITAV vs. case temperature TC for sinusoidal current waveforms atdifferent conduction angles (f=50Hz, DSC)

25 35 45 55 65 75 85 95 105 115 125 1350

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

MT1

-650

-B0,

22-

Apr-

2019

Case temperature — TC, ˚C

Mea

n on

-sta

te c

urre

nt —

IT

(AV

), A

Ѳ=30º

Ѳ=60º

Ѳ=90º

Ѳ=120º

Ѳ=180º

Ѳ - angle of conduction Rectangular current waveforms

DC

Fig. 12 - Mean on-state current ITAV vs. case temperature TC for rectangular current waveforms atdifferent conduction angles and for DC (f=50Hz, DSC)


1 10 1001

10

100

0,1

1

10

Surg

e on

-sta

te c

urre

nt –

IT

SM, k

A

Pulse length – tp, ms

Safe

ty fa

ctor

– I

2t,

kA2 s

MT1-650-B0, 22-Apr-2019

ITSM

:Vrm

<10V

ITSM

:Vrm

=0.67VRRM

I2t:Vrm

<10V

I2t:Vrm

=0.67VRRM

Tj = 140 °C

Fig. 13 – Maximum surge on-state current ITSM and safety factor I2t vs. pulse length tp

1 10 1001

10

100

Surg

e on

-sta

te c

urre

nt –

IT

SM, k

A

Number of pulses – np

Vrm

<10V

Vrm

=0.67VRRM

Tj = 140 °C

MT

1-65

0-B

0, 2

2-A

pr-2

019

Fig. 14 - Maximum surge on-state current ITSM vs. number of pulses np


proton-electrotex · 2020. 11. 12. · proton-electrotex electrically isolated base plate...

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