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www.epcos.com EPCOS Product Profile 2012 Pressure Sensor Dies

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www.epcos.com

EPCOS Product Profile 2012

Pressure Sensor Dies

3© EPCOS AG 2012

Pressure Sensor Dies

The high precision of piezoresistive sensors and their ability to measure absolute,

gauge and differential pressure allow their versatile use in a wide range of applications.

Within industrial equipment and systems pressure sensors supply the measured data

used to control and diagnose hydraulically or pneumatically operated machines, for

instance. This makes them key components in measurement and control technology.

In the automotive industry sensors measure the pressure of various media to support

engine management and safety systems. The sensors need to support a precise

engine control for low fuel consumption and need to enable exhaust gas treatment for

a reduction of harmful emissions. Long-term stability and high accuracy is mandatory

to meet the latest system requirements.

All applications place increasingly demanding requirements on the distinctive

characteristics of the pressure dies and call for specific design features already on

the die level. The portfolio of EPCOS pressure sensors has been developed with a

strong focus on increased sensitivity and high performance with a smaller die size. In

addition, particular attention is paid to specific features for media resistance and easy

processability.

4 © EPCOS AG 2012

Important Notes

The following applies to all products named in this publication:

1. Some parts of this publication contain statements about the suitability of our products for certain ar-eas of application. These statements are based on our knowledge of typical requirements that are often placed on our products in the areas of application concerned. We nevertheless expressly point out that such state-ments cannot be regarded as binding statements about the suitability of our products for a particular customer application. As a rule, EPCOS is either unfa-miliar with individual customer applications or less famil-iar with them than the customers themselves. For these reasons, it is always ultimately incumbent on the cus-tomer to check and decide whether an EPCOS product with the properties described in the product specification is suitable for use in a particular customer application.

2. We also point out that in individual cases, a malfunc-tion of electronic components or failure before the end of their usual service life cannot be completely ruled out in the current state of the art, even if they are operated as specified. In customer applications re-quiring a very high level of operational safety and espe-cially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health (e.g. in accident prevention or life-saving systems), it must therefore be ensured by means of suitable design of the customer application or other action taken by the customer (e.g. installation of protec-tive circuitry or redundancy) that no injury or damage is sustained by third parties in the event of malfunction or failure of an electronic component.

3. The warnings, cautions and product-specific notes must be observed.

4. In order to satisfy certain technical requirements, some of the products described in this publica-tion may contain substances subject to restric-tions in certain jurisdictions (e.g. because they are classed as hazardous). Useful information on this will be found in our Material Data Sheets on the Internet (www.epcos.com/material). Should you have any more detailed questions, please contact our sales offices.

5. We constantly strive to improve our products. Conse-quently, the products described in this publication may change from time to time. The same is true of the corresponding product specifications. Please check therefore to what extent product descriptions and speci-fications contained in this publication are still applicable before or when you place an order.

We also reserve the right to discontinue production and delivery of products. Consequently, we cannot guarantee that all products named in this publication will always be available.

The aforementioned does not apply in the case of indi-vidual agreements deviating from the foregoing for cus-tomer-specific products.

6. Unless otherwise agreed in individual contracts, all or-ders are subject to the current version of the “Gener-al Terms of Delivery for Products and Services in the Electrical Industry” published by the German Electri-cal and Electronics Industry Association (ZVEI).

7. The trade names EPCOS, BAOKE, Alu-X, CeraDiode, CSMP, CSSP, CTVS, DeltaCap, DigiSiMic, DSSP, FormFit, MiniBlue, MiniCell, MKD, MKK, MLSC, MotorCap, PCC, PhaseCap, PhaseCube, PhaseMod, PhiCap, SIFERRIT, SIFI, SIKOREL, SilverCap, SIMDAD, SiMic, SIMID, SineFormer, SIOV, SIP5D, SIP5K, ThermoFuse, WindCap are trademarks registered or pending in Europe and in other countries. Further information will be found on the Internet at www.epcos.com/trademarks.

5© EPCOS AG 2012

Important notes 4

General technical information 6

Overview 9

Standard dies

�� C27, absolute, front side Area: 3.05 mm × 3.05 mm 10

�� C27, gauge Area: 3.05 mm × 3.05 mm 11

�� C29, absolute, back side Area: 2.20 mm × 2.70 mm 12

�� C32, absolute, back side Area: 1.65 mm × 1.65 mm 13

�� C32, absolute, front side Area: 1.65 mm × 1.65 mm 14

�� C32, gauge Area: 1.65 mm × 1.65 mm 15

�� C33, absolute, front side Area: 1.00 mm × 1.00 mm 16

Dies with specific features

�� C32, gauge, gold bond pads Area: 1.65 mm × 1.65 mm 17

�� C32, gauge, back side gold layer Area: 1.65 mm × 1.65 mm 18

�� C32, gauge, back side protection layer Area: 1.65 mm × 1.65 mm 19

Symbols and terms 20

Cautions and warnings 21

Get in contact 22

Contents

6 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.

General Technical Information

Measurement principle

Silicon

Glass

TDS0013-7-E

Measurement of pressure with silicon sensor dies is based on the piezo-resistive effect. This is utilized in a silicon diaphragm in which mechanical stress leads to a change of resistivity. The mechanical stress results from a pressure difference across the diaphragm.

A network of implanted resistors in the diaphragm is used to transform the change of resistivity into an electrical signal that is proportional to the applied pressure difference.

Depending on the application the sensor can be used as a bare die or be bonded to glass for mechanical restraint or to provide a reference vacuum.

Absolute pressure

Absolute pressure sensor dies need a vacuum as a reference point for the pressure to be measured. This reference vacuum is created by bonding the sensor to a solid glass base.

Silicon

Glass

TDS0068-C-E

Front side processing

The reference vacuum is created by bonding the glass under vacuum to the silicon. The medium to be measured comes into contact with the active electronic components on the front side of the chip (top side of the chip). Only dry and non-aggressive media may be measured.

Glass

TDS0036-Q-E

Glass top

Silicon

Back side processing

To measure the pressure of wet and/ or harsh media, contact with the front side needs to be avoided. This is done by creating a back side entry for the media and a reference vacuum on the front side.

Differential pressure sensor

A pressure difference caused by a higher front side pressure leads to a positive change of the output signal. A higher back side pressure leads to a negative change of the output signal. A differential pressure sensor can be used for flow measurement by measuring the pressure drop across a restrictor.

Gauge pressure

Silicon

Glass

TDS0069-F-E

A gauge pressure sensor is a special case of a differential pressure sensor where either the front or the back side is exposed to ambient pressure.

7Please read Important notes on page 4 and Cautions and warnings on page 21.© EPCOS AG 2012

General Technical Information

Typical applications

Industry Automotive

�z Hydraulic and pneumatic systems�z Measurement and control technology�z Environmental and climate protection

�z Engine management�z Exhaust gas treatment�z Braking systems

Consumer Medicine

�z Barometric measurements in portable electronics�z Control of vacuum chambers�z Sport devices

�z Respiration technology�z Anesthesia equipment�z Blood pressure monitoring

Pressure units

Conversion table for pressure units

bar psi kPa cm H2O inch H2O mm Hg lbf/ft2

0.016 0.232 1.6 16.32 6.43 12.0 33.416

0.025 0.363 2.5 25.49 10.04 18.8 52.213

0.040 0.58 4.0 40.79 16.06 30.0 83.54

0.060 0.87 6.0 61.18 24.09 45.0 125.31

0.100 1.45 10.0 101.97 40.15 75.0 208.85

0.160 2.32 16.0 163.2 64.25 120.0 334.16

0.250 3.63 25.0 254.9 100.35 188.0 522.125

0.400 5.8 40.0 407.9 160.59 300.0 835.4

0.600 8.7 60.0 611.8 240.87 450.0 1253.1

1.000 14.5 100.0 1019.7 401.46 750.0 2088.5

1.600 23.2 160.0 1632.0 642.52 1200.0 3341.6

2.500 36.3 250.0 2549.0 1003.54 1875.0 5221.25

4.000 58.0 400.0 4079.0 1605.91 3000.0 8354.0

6.000 87.0 600.0 6118.0 2408.66 4500.0 12531.0

10.00 145.0 1000.0 10197.0 4014.57 7501.0 20885.0

16.00 232.0 1600.0 16316.0 6423.62 12001.0 33416.0

25.00 363.0 2500.0 25494.0 10037.01 18752.0 52212.5

40.00 580.0 4000.0 40790.0 16059.06 30002.0 83540.0

60.00 870.0 6000.0 61184.0 24088.19 45003.0 125310.0

100.00 1450.0 10000.0 101974.0 40147.24 75006.0 208850.0

8 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.

General Technical Information

Description of terms

Characteristic curve The key parameters of the characteristic curve are described below:

Offset voltage The output voltage Vout at zero pressure, known as the offset voltage, typically varies between ±25 mV1) due to the spread of the technological parameters.

Sensitivity The sensitivity is the quotient of the changes of the output voltage and the applied pressure. Thinner diaphragms and larger surfaces increase the sensitivity and decrease the loadbearing capacity of the diaphragm. Every design is therefore a compromise between high sensitivity and a sufficient pressure overload factor.Depending on the pressure range, the sensitivity extends between 5 and 500 mV/bar1). The sensitivity varies within a single pressure range.

Nonlinearity The nonlinearity describes the deflection of the characteristic curve or the deviation from an ideal straight line. Depending on the pressure range, the nonlinearity typically varies from ±0.1 to ±1.0% FS2).

Hysteresis For an output signal indicating the same pressure, the hysteresis represents the greatest difference between measurements made in the direction of increasing and (subsequently) decreasing pressure. This error cannot be determined or compensated. However, this effect is very small and can be neglected in most applications.

Temperature effects The offset, sensitivity and bridge resistance are functions of the temperature.

Offset V0 The temperature coefficient of the offset voltage typically varies between ±4 μV/KV depending on the technological parameters. This effect can be neglected in most applications.

Sensitivity S The temperature coefficient of the sensitivity is much more significant. Depending on the technological parameters, a typical value of aS ranges between –2.5 and –1.9 · 10-3/K. The sensitivity thus decreases with temperature rise. A typical value of βS is 5 · 10-6/K2.

Bridge resistance Rb The bridge resistance is directly proportional to the temperature (at 25 °C, 3 kΩ). Depending on the technological parameters, a typical value of aRb ranges between 2.0 and 2.5 · 10-3/K. A typical value of βRb is 6 · 10-6/K2.

1) At VDD = 5 V voltage source2) FS = Vr – V0 (full scale)

Note: For further details please refer to page 20.

9© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.

Overview

Pressure sensor dies

Type Pressure measurement Rated pressure ranges bar

Area dimensionsmm

Media Page

Standard dies

C27 Absolute, front side 0 … 0.250 … 0.40 … 1.0

3.05 × 3.05 Dry non-aggressive gases

10

Gauge 0 … 0.10 … 0.250 … 0.40 … 1.0

3.05 × 3.05 Non-aggressive gases and fluids

11

C29 Absolute, back side 0 … 1.00 … 2.50 … 4.00 … 10.0

2.20 × 2.70 Non-aggressive gases and fluids

12

C32 Absolute, back side 0 … 1.60 … 4.00 … 10.00 … 25.0

1.65 × 1.65 Non-aggressive gases and fluids

13

Absolute, front side 0 … 1.60 … 4.00 … 10.00 … 25.0

1.65 × 1.65 Dry non-aggressive gases

14

Gauge 0 … 0.40 … 1.60 … 4.00 … 10.00 … 25.0

1.65 × 1.65 Non-aggressive gases and fluids

15

C33 Absolute, front side 0 … 1.20 … 2.50 … 10.0

1.00 × 1.00 Dry non-aggressive gases

16

Type Pressure measurement Rated pressure ranges bar

Area dimensionsmm

Specific feature Page

Dies with specific features

C32 Gauge, gold bond pads 0 … 1.60 … 4.00 … 10.00 … 25.0

1.65 × 1.65 Higher resistance against corrosion

17

Gauge, gold layer 0 … 1.60 … 4.00 … 10.00 … 25.0

1.65 × 1.65 For metal based soldering

18

Gauge, protection layer 0 … 0.4 1.65 × 1.65 Higher resistance against aggressive gases and fluids

19

10 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.

Standard DiesC27, absolute pressure measurement, front side

For 1) … 16) please refer to page 20.

Dimensional drawing Circuit diagram Cross-section

Silicon

Glass

TDS0012-8-E

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 5.0 V

Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)2.1 2.4 2.7 10–3/K

βRb 4 6 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full scale output, normal, FSON = 120 mV)

LTSV012) –0.45 ±0.3 +0.45 % FSON

Rated Over Burst Nonlinearity Offset voltage

Temperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. min./ typ./ max.

B58600C5010A003 0.25 0.75 4.8 ±0.2/ ±0.3 –30/ +30 –2 … +2 –4 … +4 300/ 400/ 480

B58600C5010A004 0.4 1.2 2.0 ±0.2/ ±0.3 –30/ +30 –2 … +2 –4 … +4 225/ 300/ 375

B58600C5010A005 1.0 3.0 5.0 ±0.2/ ±0.4 –30/ +30 –2 … +2 –4 … +4 90/ 120/ 150

Features

�z Dimensions (area × height): 3.05 mm × 3.05 mm × 0.9 mm�z Media: Dry non-aggressive gases�z Rated pressure ranges: 0 … 0.250 bar to 0 … 1 bar

11© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.

Standard DiesC27, gauge pressure measurement

For 1) … 16) please refer to page 20.

Dimensional drawing Circuit diagram Cross-section

Silicon

Glass

TDS0013-7-E

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 5.0 V

Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)2.1 2.4 2.7 10–3/K

βRb 4 6 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full scale output, normal, FSON = 120 mV)

LTSV012) –0.45 ±0.3 +0.45 % FSON

Rated Over Burst *)Nonlinearity Offset

voltageTemperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. min./ typ./ max.

B58601C5010A006 0.1 0.25 0.3 ±0.5/ ±0.75 –30/ +30 –2 … +2 –4 … +4 350/ 500/ 700

B58601C5010A007 0.25 0.625 0.75 ±0.35/ ±0.5 –30/ +30 –2 … +2 –4 … +4 300/ 400/ 480

B58601C5010A008 0.4 1.0 1.2 ±0.2/ ±0.3 –30/ +30 –2 … +2 –4 … +4 225/ 300/ 375

B58601C5010A009 1.0 2.5 3.0 ±0.2/ ±0.3 –30/ +30 –2 … +2 –4 … +4 90/ 120/ 150

Features

�z Dimensions (area × height): 3.05 mm × 3.05 mm × 0.9 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 0.1 bar to 0 … 1 bar

*) Higher burst pressure on request.

12 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.

For 1) … 16) please refer to page 20.

Dimensional drawing Circuit diagram Cross-section

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 5.0 V

Total bridge resistance Rb @ 25 °C 5) 2.1 2.7 3.3 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)1.9 2.2 2.5 10–3/K

βRb 4 6 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full scale output, normal, FSON = 120 mV)

LTSV012) –0.45 ±0.3 +0.45 % FSON

Rated Over Burst *)Nonlinearity Offset

voltageTemperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. min./ typ./ max.

B58600E0410A002 1.0 2.5 3.0 ±0.2/ ±0.3 –65/ +30 –22 –45 60/ 85/ 105

B58600E0410A003 2.5 6.25 7.5 ±0.2/ ±0.3 –55/ +30 –13 –25 35/ 50/ 65

B58600E0410A004 4.0 10.0 12.0 ±0.2/ ±0.3 –45/ +30 –9 –18 20/ 30/ 40

B58600E0410A005 10.0 25.0 30.0 ±0.2/ ±0.3 –35/ +30 –5 –10 9/ 13/ 16

Features

�z Dimensions (area × height): 2.2 mm × 2.7 mm × 1.6 mm�z Media: Non–aggressive gases and fluids�z Rated pressure ranges: 0 … 1 bar to 0 … 10 bar

Standard DiesC29, absolute pressure measurement, back side

*) Higher burst pressure on request.

13© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.

Dimensional drawing Circuit diagram Cross-section

Glass

TDS0036-Q-E

Glass top

Silicon

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 5.0 V

Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)2.0 2.3 2.7 10–3/K

βRb 3 5 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full scale output, normal, FSON = 120 mV)

LTSV012) –0.3 ±0.1 0.3 % FSON

Rated Over Burst *)Nonlinearity Offset

voltageTemperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. min./ typ./ max.

B58600H8400A037 1.6 4.0 4.8 ±0.2/ ±0.3 –50/ +25 –10 –20 45/ 70/ 95

B58600H8400A039 4.0 10.0 12.0 ±0.2/ ±0.3 –40/ +25 –5 … +5 –10 23/ 30/ 38

B58600H8400A038 10.0 25.0 30.0 ±0.2/ ±0.3 –35/ +25 –3 … +3 –7 9/ 12/ 15

B58600H8400A040 25.0 62.5 75.0 ±0.2/ ±0.3 –30/ +25 –3 … +3 –6 3.6/ 4.8/ 6

For 1) … 16) please refer to page 20.

Features

�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.5 mm�z Media: Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 1.6 bar to 0 … 25 bar

Standard DiesC32, absolute pressure measurement, back side

*) Higher burst pressure on request.

14 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.

For 1) … 16) please refer to page 20.

Dimensional drawing Circuit diagram Cross-section

Silicon

Glass

TDS0068-C-E

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 5.0 V

Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)2.0 2.3 2.7 10–3/K

βRb 3 5 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full scale output, normal, FSON = 120 mV)

LTSV012) –0.3 ±0.1 0.3 % FSON

Rated Over Burst Nonlinearity Offset voltage

Temperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. min./ typ./ max.

B58600H8000A001 1.6 4.8 8 ±0.2/ ±0.3 –30/ +30 –4 … +4 –8 … +8 45/ 70/ 95

B58600H8000A002 4 12 20 ±0.2/ ±0.3 –30/ +30 –4 … +4 –8 … +8 23/ 30/ 38

B58600H8000A003 10 30 50 ±0.2/ ±0.4 –30/ +30 –4 … +4 –8 … +8 9/ 12/ 15

B58600H8000A004 25 75 125 ±0.2/ ±0.4 –30/ +30 –4 … +4 –8 … +8 3.6/ 4.8/ 6

Features

�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media: Dry non-aggressive gases�z Rated pressure ranges: 0 … 1.6 bar to 0 … 25 bar

�z Electrical shield on front side

Standard DiesC32, absolute pressure measurement, front side

15© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.

Dimensional drawing Circuit diagram Cross-section

Silicon

Glass

TDS0069-F-E

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 5.0 V

Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)2.0 2.3 2.7 10–3/K

βRb 3 5 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full-scale output, normal, FSON = 120 mV)

LTSV012)

pr4) ≥ 1.6 bar –0.2 ±0.1 +0.2 % FSON

pr4) = 0.6 bar –0.35 ±0.15 +0.35 % FSON

Rated Over Burst *)Nonlinearity Offset

voltageTemperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. min./ typ./ max.

Upon request 0.4 1.0 1.2 ±0.7/ ±1.0 –25/ +25 –8 … +8 –16 … +16 185/ 225/ 315

B58600H8400A037 1.6 4.0 4.8 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 45/ 70/ 95

B58600H8400A039 4.0 10.0 12.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 23/ 30/ 38

B58600H8400A038 10.0 25.0 30.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 9/ 12/ 15

B58600H8400A040 25.0 62.5 75.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 3.6/ 4.8/ 6

For 1) … 16) please refer to page 20.

Features

�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 0.4 bar to 0 … 25 bar

�z Electrical shield on front side

Standard DiesC32, gauge pressure measurement

*) Higher burst pressure on request.

16 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.

Dimensional drawing Circuit diagram Cross-section

Silicon

TDS0064-Y-E

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 6.0 V

Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)2.1 2.4 2.7 10–3/K

βRb 4 6 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full scale output, normal, FSON = 120 mV)

LTSV012) – ±0.1 – % FSON

Rated Over Burst Nonlinearity Offset voltage

Temperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. typ.

B58600I0000A001 1.2 3.6 6.0 ±0.2/ ±0.3 –30/ +30 –4 … +4 –4 … +4 80

Upon request 2.5 7.5 12.5 ±0.2/ ±0.3 –30/ +30 –4 … +4 –4 … +4 50

Upon request 10.0 30.0 50.0 ±0.2/ ±0.3 –30/ +30 –4 … +4 –4 … +4 15

For 1) … 16) please refer to page 20.

Features

�z Dimensions (area × height): 1.0 mm × 1.0 mm × 0.4 mm�z Media: Dry non-aggressive gases�z Rated pressure ranges: 0 … 1.2 bar to 0 … 10 bar

�z Electrical shield on front side

Standard DiesC33, absolute pressure measurement, front side

17© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.

For 1) … 16) please refer to page 20.

Dimensional drawing Circuit diagram Cross-section

Silicon

Glass

TDS0069-F-E

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 5.0 V

Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)2.0 2.3 2.7 10–3/K

βRb 3 5 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full scale output, normal, FSON = 120 mV)

LTSV012) –0.2 ±0.1 +0.2 % FSON

Rated Over Burst *)Nonlinearity Offset

voltageTemperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. min./ typ./ max.

Upon request 1.6 4.0 4.8 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 45/ 70/ 95

Upon request 4 10 12 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 23/ 30/ 38

Upon request 10 25 30 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 9/ 12/ 15

Upon request 25 62.5 75 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 3.6/ 4.8/ 6

Features

�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 1.6 bar to 0 … 25 bar

�z Electrical shield on front side�z Gold bond pads

Dies with Specific FeaturesC32, gauge pressure measurement, gold bond pads for improved corrosion resistance

*) Higher burst pressure on request.

18 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.

Dimensional drawing Circuit diagram Cross-section

Silicon

Glass

TDS0069-F-E

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 5.0 V

Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)2.0 2.3 2.7 10–3/K

βRb 3 5 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full scale output, normal, FSON = 120 mV)

LTSV012) –0.2 ±0.1 +0.2 % FSON

Rated Over Burst *)Nonlinearity Offset

voltageTemperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. min./ typ./ max.

Upon request 1.6 4.0 4.8 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 45/ 70/ 95

Upon request 4.0 10.0 12.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 23/ 30/ 38

Upon request 10.0 25.0 30.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 9/ 12/ 15

Upon request 25.0 62.5 75.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 3.6/ 4.8/ 6

For 1) … 16) please refer to page 20.

Features

�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 1.6 bar to 0 … 25 bar

�z Electrical shield on front side�z Gold layer on back side

Dies with Specific FeaturesC32, gauge pressure measurement, gold layer for back side die soldering

*) Higher burst pressure on request.

19© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.

Dimensional drawing Circuit diagram Cross-section

Silicon

Glass

TDS0069-F-E

Technical data

Symbol Conditions Min. Typ. Max. Unit

Temperature maximum ratings

Operating temperature range Top

1) –40 – 135 °C

For t < 15 min –40 – 140 °C

Storage temperature range Tstg2) –40 – 150 °C

Electrical specifications @ VDD = 5 V

Maximum supply voltage VDD Without damage 3) – – 10 V

Operating supply voltage VDD4) 1.0 – 5.0 V

Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW

Temperature coefficient of total bridge resistanceaRb

@ 25 °C 6)2.0 2.3 2.7 10–3/K

βRb 3 5 8 10–6/K2

Temperature coefficient of sensitivityaS

@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K

βS 3 5 8 10–6/K2

Pressure hysteresis pHys 11) –0.1 – 0.1 % FS

Long-term stability of offset (Full scale output, normal, FSON = 120 mV)

LTSV012) –0.2 ±0.1 +0.2 % FSON

Rated Over Burst *)Nonlinearity Offset

voltageTemperature coefficient of offset voltage

Sensitivity

pressure

Rated pressure @ 25 °C, VDD = 5 V

Condition 13) 14) 15) 16) 7) Unglued 9) 8)

Symbol pr pov pburst L V0 TCV0+ TCV0– S

Unit bar bar bar % FS mV µV/KV µV/KV mV/bar

Ordering codes

typ./ max. min./ max. typ. min./ typ./ max.

Upon request 0.4 1.0 1.2 ±0.7/ ±1.0 –25/ +25 –8 … +8 –16 … +16 185/ 225/ 315

For 1) … 16) please refer to page 20.

Features

�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 0.4 bar to 0 … 1 bar

�z Electrical shield on front side�z Protection layer on back side of diaphragm

Dies with Specific FeaturesC32, gauge pressure measurement, protection layer for improved media resistance of back side diaphragm

*) Higher burst pressure on request.

20 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.

Symbols and Terms

1) Operating temperature range Top

This is the operating temperature range Top,min to Top,max. Because most of the sensor parameters depend on assembling conditions like glueing, wire bonding, etc., the die has to be tested over the operating temperature range by the customer fully assembled.

2) Storage temperature range Tstg

If pressure sensor dies are stored in the temperature range Tstg,min to Tstg,max without applied voltage, this will not affect the performance of the pressure sensor dies.

3) Maximum supply voltage VDD

This is the maximum permissible voltage that may be ap-plied to the piezoresistive bridge circuit without damage.

4) Operating supply voltage VDD

Pressure sensor parameters are defined for a power sup-ply voltage of VDD = 5 V. For the operating voltage range VDD,min to VDD,max the ratiometric parameters r(VDD) such as sensitivity, offset voltage and the temperature coefficient of the offset voltage are defined by:

5) Total bridge resistance Rb

Total bridge resistance is defined between pads X5 and X2 (see the dimensional drawing in the data sheet) of the closed piezoresistive bridge circuit. In approximation the total bridge resistance equals the output impedance of the piezoresistive bridge circuit.

6) Temperature coefficients of total bridge resistance aRb and βRb:The temperature coefficients of first and second order are defined by the polynomial:

Rb (T) = Rb (T = 25 °C) 1 + αRb (T – 25 °C) + βRb (T – 25 °C)2

The coefficients aRb and βRb are calculated using the three measurement points of Rb(T) at Tmeas,min = –20 °C to Tmeas,max = 80 °C with TR = 25 °C.

7) Offset voltage V0

The offset voltage V0 is the output voltage Vout(p = 0 bar) at zero gauge/ absolute pressure and for a supply volt-age VDD = 5 V.

8) Sensitivity SSensitivity is defined for a bridge voltage supply VDD = 5 V. It can be determined by the formula:

S =Vout (pr,max) – V0

pr,max

9) Temperature coefficient of offset voltage TCV0

The temperature coefficients of offset voltage are defined for a supply voltage VDD = 5 V. TCV0+ and TCV0– are defined for the measurement temperature range Tmin = –40 °C to Tmax = 135 °C by:

10) Temperature coefficient of sensitivity aS and βS:The temperature coefficients of first and second order are defined by the polynomial:

S (T) = S (T = 25 °C) 1 + αS (T – 25 °C) + βS (T – 25 °C)2

The coefficients aS and βS are calculated using three mea-surement points of S(T) at Tmeas,min = –20 °C to Tmeas,max = 80 °C with TR = 25 °C.

11) Pressure hysteresis pHysPressure hysteresis is the difference between output voltages at constant pressure and constant temperature while applying a pressure cycle with pressure steps of pr, min, p1, p2, p3, pr,max, p3, p2, p1, pr,min:

pHys =Vout,2 (pk) – Vout,1 (pk)

FS

With k = min., 1, 2, 3, max. the pressure steps are: pr,min = 0, p1 = 0.25 · pr,max, p2 = 0.5 · pr,max, p3 = 0.75 · pr,max, pr,max.

12) Reliability dataFor long-term stability of offset voltage LTSV0 refer to Aktiv Sensor’s standard AS100001 in chapter “Reliability data” on the internet.

13) Rated pressure range pr

For the rated pressure range 0 bar to pr,max the pressure sensor die output characteristic is according to this specification.

14) Overpressure pOV Pressure cycles in the pressure range from 0 bar to pov do not affect the performance of the pressure sensor dies.

15) Burst pressure pburst

The diaphragm of the sensor die will not suffer mechani-cal destruction up to the burst pressure pburst.

16) Nonlinearity LNonlinearity is measured using the endpoint method. Assuming a characteristic, this can be approximated by a polynomial of second order, where the maximum is at px = pr,max/2. The nonlinearity is defined at px = pr,max/2, using the equation:

L =Vout (px) – V0

Vout (pr,max) – V0

px

pr,max

TCV0+ =V0 (Tmax) – V0 (25 °C)

Tmax – 25 °CTCV0– =

V0 (Tmin) – V0 (25 °C)

Tmin – 25 °C

21Please read Important notes on page 4.© EPCOS AG 2012

Cautions and Warnings

Storage

All pressure sensors should be stored in their original pack-age. They should not be placed in harmful environments such as corrosive gases nor exposed to heat or direct sunlight, which may cause deformations. Similar effects may result from extreme storage temperatures and climatic conditions. Avoid storing the sensor dies in an environment where condensation may occur or in a location exposed to corrosive gases, which will adversely affect their perfor-mance. Plastic materials should not be used for wrapping/ packing when storing or transporting these dies, as they may get charged. Pressure sensor dies should be used soon after opening their seal and packaging.

Storage conditions

Materials used for storage should be ESD protective according to JESD625, non-outgassing, and chemi-cally stable. Furthermore the following storage conditions should be observed:�z Storage in cabinets (if shipping package is opened)

– Atmosphere: inert gas, dry air or dry nitrogen – Temperature range (in cabinet): 20 ±3 °C – Relative humidity range (in cabinet): < 40% – Particle count (in cabinet): class 6 of ISO 14644:1999 (equivalent to FED STD 209E class 1000)

– Shelf life under these conditions: 24 months for deliveries in trays

– Shelf life under these conditions: 12 months for deliveries on tape

�z Storage in containers (if shipping package is sealed) – Sealed as delivered or backfilled with inert gas, dry air or dry nitrogen and re-sealed

– Temperature range: 20 ±3 °C – Relative humidity range: < 50% – Particle count (during backfill): class 6 of ISO 14644:1999 (equivalent to FED STD 209E class 1000)

– Shelf life under these conditions: 12 months for deliveries in trays

– Shelf life under these conditions: 6 months for deliveries on tape

Operation

Media compatibility with the pressure sensors must be ensured to prevent their failure. The use of other media can cause damage and malfunction. Never use pressure sen-sors in atmospheres containing explosive liquids or gases.Ensure pressure equalization to the environment, if gauge pressure sensors are used. Avoid operating pressure sen-sors in an environment where condensation may occur or in a location exposed to corrosive gases. These environ-ments adversely affect their performance.If operating pressure is above the rated overpressure, it may change the output characteristics. This may also

happen with pressure sensor dies if an incorrect mounting method is used. Make sure the applicable pressure does not exceed the overpressure, as it may damage the pres-sure sensor.

Do not exceed the maximum rated supply voltage or rated storage temperature range, as it may damage the pressure sensor.

Temperature variations in both the ambient conditions and the media (liquid or gas) can affect the accuracy of the output signal from pressure sensors. Be sure to check the operating temperature range and thermal error specifica-tion of the pressure sensors to determine their suitability for the application.

Connections must be wired in accordance with the termi-nal assignment specified in the data sheet. Care should be taken as reversed pin connections can damage the pressure sensors or degrade their performance. Contact between the pressure sensor terminals and metals or other materials may cause errors in the output characteristic.

Design notes

This document describes the mechanical, electrical and physical requirements of a piezoresistive sensor die for measuring pressure. The specified parameters apply when pressure is applied (to the diaphragm) in the direction shown in the cross-section. Pressure applied in the other direction may yield different results. Most of the param-eters are influenced by assembly conditions. Hence these parameters and the reliability have to be specified for each specific application and tested over its temperature range by the customer.

Handling/ mounting

Pressure sensor dies should be handled appropriately and not be touched with bare hands. They should only be picked up manually by the sides using tweezers. Their top surface should never be touched with tweezers. Latex gloves should not be used for handling, as this will inhibit the curing of the adhesive used to bond the die to the carrier. The sensor die must not be contaminated during manufacturing processes (glueing, soldering, silk-screen process).

The package of pressure sensor dies should not to be opened until the die is mounted and should be closed after use. The sensor die must not be cleaned. The sensor die must not be damaged during the assembly process (espe-cially scratches must be avoided).

22 © EPCOS AG 2012

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© EPCOS AG · A Member of TDK-EPC CorporationEdition 2012 · Ordering No. EPC: 69008-7600 · Printed in Germany · PP 02124.