pressure sensors dies - pp
TRANSCRIPT
3© EPCOS AG 2012
Pressure Sensor Dies
The high precision of piezoresistive sensors and their ability to measure absolute,
gauge and differential pressure allow their versatile use in a wide range of applications.
Within industrial equipment and systems pressure sensors supply the measured data
used to control and diagnose hydraulically or pneumatically operated machines, for
instance. This makes them key components in measurement and control technology.
In the automotive industry sensors measure the pressure of various media to support
engine management and safety systems. The sensors need to support a precise
engine control for low fuel consumption and need to enable exhaust gas treatment for
a reduction of harmful emissions. Long-term stability and high accuracy is mandatory
to meet the latest system requirements.
All applications place increasingly demanding requirements on the distinctive
characteristics of the pressure dies and call for specific design features already on
the die level. The portfolio of EPCOS pressure sensors has been developed with a
strong focus on increased sensitivity and high performance with a smaller die size. In
addition, particular attention is paid to specific features for media resistance and easy
processability.
4 © EPCOS AG 2012
Important Notes
The following applies to all products named in this publication:
1. Some parts of this publication contain statements about the suitability of our products for certain ar-eas of application. These statements are based on our knowledge of typical requirements that are often placed on our products in the areas of application concerned. We nevertheless expressly point out that such state-ments cannot be regarded as binding statements about the suitability of our products for a particular customer application. As a rule, EPCOS is either unfa-miliar with individual customer applications or less famil-iar with them than the customers themselves. For these reasons, it is always ultimately incumbent on the cus-tomer to check and decide whether an EPCOS product with the properties described in the product specification is suitable for use in a particular customer application.
2. We also point out that in individual cases, a malfunc-tion of electronic components or failure before the end of their usual service life cannot be completely ruled out in the current state of the art, even if they are operated as specified. In customer applications re-quiring a very high level of operational safety and espe-cially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health (e.g. in accident prevention or life-saving systems), it must therefore be ensured by means of suitable design of the customer application or other action taken by the customer (e.g. installation of protec-tive circuitry or redundancy) that no injury or damage is sustained by third parties in the event of malfunction or failure of an electronic component.
3. The warnings, cautions and product-specific notes must be observed.
4. In order to satisfy certain technical requirements, some of the products described in this publica-tion may contain substances subject to restric-tions in certain jurisdictions (e.g. because they are classed as hazardous). Useful information on this will be found in our Material Data Sheets on the Internet (www.epcos.com/material). Should you have any more detailed questions, please contact our sales offices.
5. We constantly strive to improve our products. Conse-quently, the products described in this publication may change from time to time. The same is true of the corresponding product specifications. Please check therefore to what extent product descriptions and speci-fications contained in this publication are still applicable before or when you place an order.
We also reserve the right to discontinue production and delivery of products. Consequently, we cannot guarantee that all products named in this publication will always be available.
The aforementioned does not apply in the case of indi-vidual agreements deviating from the foregoing for cus-tomer-specific products.
6. Unless otherwise agreed in individual contracts, all or-ders are subject to the current version of the “Gener-al Terms of Delivery for Products and Services in the Electrical Industry” published by the German Electri-cal and Electronics Industry Association (ZVEI).
7. The trade names EPCOS, BAOKE, Alu-X, CeraDiode, CSMP, CSSP, CTVS, DeltaCap, DigiSiMic, DSSP, FormFit, MiniBlue, MiniCell, MKD, MKK, MLSC, MotorCap, PCC, PhaseCap, PhaseCube, PhaseMod, PhiCap, SIFERRIT, SIFI, SIKOREL, SilverCap, SIMDAD, SiMic, SIMID, SineFormer, SIOV, SIP5D, SIP5K, ThermoFuse, WindCap are trademarks registered or pending in Europe and in other countries. Further information will be found on the Internet at www.epcos.com/trademarks.
5© EPCOS AG 2012
Important notes 4
General technical information 6
Overview 9
Standard dies
�� C27, absolute, front side Area: 3.05 mm × 3.05 mm 10
�� C27, gauge Area: 3.05 mm × 3.05 mm 11
�� C29, absolute, back side Area: 2.20 mm × 2.70 mm 12
�� C32, absolute, back side Area: 1.65 mm × 1.65 mm 13
�� C32, absolute, front side Area: 1.65 mm × 1.65 mm 14
�� C32, gauge Area: 1.65 mm × 1.65 mm 15
�� C33, absolute, front side Area: 1.00 mm × 1.00 mm 16
Dies with specific features
�� C32, gauge, gold bond pads Area: 1.65 mm × 1.65 mm 17
�� C32, gauge, back side gold layer Area: 1.65 mm × 1.65 mm 18
�� C32, gauge, back side protection layer Area: 1.65 mm × 1.65 mm 19
Symbols and terms 20
Cautions and warnings 21
Get in contact 22
Contents
6 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.
General Technical Information
Measurement principle
Silicon
Glass
TDS0013-7-E
Measurement of pressure with silicon sensor dies is based on the piezo-resistive effect. This is utilized in a silicon diaphragm in which mechanical stress leads to a change of resistivity. The mechanical stress results from a pressure difference across the diaphragm.
A network of implanted resistors in the diaphragm is used to transform the change of resistivity into an electrical signal that is proportional to the applied pressure difference.
Depending on the application the sensor can be used as a bare die or be bonded to glass for mechanical restraint or to provide a reference vacuum.
Absolute pressure
Absolute pressure sensor dies need a vacuum as a reference point for the pressure to be measured. This reference vacuum is created by bonding the sensor to a solid glass base.
Silicon
Glass
TDS0068-C-E
Front side processing
The reference vacuum is created by bonding the glass under vacuum to the silicon. The medium to be measured comes into contact with the active electronic components on the front side of the chip (top side of the chip). Only dry and non-aggressive media may be measured.
Glass
TDS0036-Q-E
Glass top
Silicon
Back side processing
To measure the pressure of wet and/ or harsh media, contact with the front side needs to be avoided. This is done by creating a back side entry for the media and a reference vacuum on the front side.
Differential pressure sensor
A pressure difference caused by a higher front side pressure leads to a positive change of the output signal. A higher back side pressure leads to a negative change of the output signal. A differential pressure sensor can be used for flow measurement by measuring the pressure drop across a restrictor.
Gauge pressure
Silicon
Glass
TDS0069-F-E
A gauge pressure sensor is a special case of a differential pressure sensor where either the front or the back side is exposed to ambient pressure.
7Please read Important notes on page 4 and Cautions and warnings on page 21.© EPCOS AG 2012
General Technical Information
Typical applications
Industry Automotive
�z Hydraulic and pneumatic systems�z Measurement and control technology�z Environmental and climate protection
�z Engine management�z Exhaust gas treatment�z Braking systems
Consumer Medicine
�z Barometric measurements in portable electronics�z Control of vacuum chambers�z Sport devices
�z Respiration technology�z Anesthesia equipment�z Blood pressure monitoring
Pressure units
Conversion table for pressure units
bar psi kPa cm H2O inch H2O mm Hg lbf/ft2
0.016 0.232 1.6 16.32 6.43 12.0 33.416
0.025 0.363 2.5 25.49 10.04 18.8 52.213
0.040 0.58 4.0 40.79 16.06 30.0 83.54
0.060 0.87 6.0 61.18 24.09 45.0 125.31
0.100 1.45 10.0 101.97 40.15 75.0 208.85
0.160 2.32 16.0 163.2 64.25 120.0 334.16
0.250 3.63 25.0 254.9 100.35 188.0 522.125
0.400 5.8 40.0 407.9 160.59 300.0 835.4
0.600 8.7 60.0 611.8 240.87 450.0 1253.1
1.000 14.5 100.0 1019.7 401.46 750.0 2088.5
1.600 23.2 160.0 1632.0 642.52 1200.0 3341.6
2.500 36.3 250.0 2549.0 1003.54 1875.0 5221.25
4.000 58.0 400.0 4079.0 1605.91 3000.0 8354.0
6.000 87.0 600.0 6118.0 2408.66 4500.0 12531.0
10.00 145.0 1000.0 10197.0 4014.57 7501.0 20885.0
16.00 232.0 1600.0 16316.0 6423.62 12001.0 33416.0
25.00 363.0 2500.0 25494.0 10037.01 18752.0 52212.5
40.00 580.0 4000.0 40790.0 16059.06 30002.0 83540.0
60.00 870.0 6000.0 61184.0 24088.19 45003.0 125310.0
100.00 1450.0 10000.0 101974.0 40147.24 75006.0 208850.0
8 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.
General Technical Information
Description of terms
Characteristic curve The key parameters of the characteristic curve are described below:
Offset voltage The output voltage Vout at zero pressure, known as the offset voltage, typically varies between ±25 mV1) due to the spread of the technological parameters.
Sensitivity The sensitivity is the quotient of the changes of the output voltage and the applied pressure. Thinner diaphragms and larger surfaces increase the sensitivity and decrease the loadbearing capacity of the diaphragm. Every design is therefore a compromise between high sensitivity and a sufficient pressure overload factor.Depending on the pressure range, the sensitivity extends between 5 and 500 mV/bar1). The sensitivity varies within a single pressure range.
Nonlinearity The nonlinearity describes the deflection of the characteristic curve or the deviation from an ideal straight line. Depending on the pressure range, the nonlinearity typically varies from ±0.1 to ±1.0% FS2).
Hysteresis For an output signal indicating the same pressure, the hysteresis represents the greatest difference between measurements made in the direction of increasing and (subsequently) decreasing pressure. This error cannot be determined or compensated. However, this effect is very small and can be neglected in most applications.
Temperature effects The offset, sensitivity and bridge resistance are functions of the temperature.
Offset V0 The temperature coefficient of the offset voltage typically varies between ±4 μV/KV depending on the technological parameters. This effect can be neglected in most applications.
Sensitivity S The temperature coefficient of the sensitivity is much more significant. Depending on the technological parameters, a typical value of aS ranges between –2.5 and –1.9 · 10-3/K. The sensitivity thus decreases with temperature rise. A typical value of βS is 5 · 10-6/K2.
Bridge resistance Rb The bridge resistance is directly proportional to the temperature (at 25 °C, 3 kΩ). Depending on the technological parameters, a typical value of aRb ranges between 2.0 and 2.5 · 10-3/K. A typical value of βRb is 6 · 10-6/K2.
1) At VDD = 5 V voltage source2) FS = Vr – V0 (full scale)
Note: For further details please refer to page 20.
9© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.
Overview
Pressure sensor dies
Type Pressure measurement Rated pressure ranges bar
Area dimensionsmm
Media Page
Standard dies
C27 Absolute, front side 0 … 0.250 … 0.40 … 1.0
3.05 × 3.05 Dry non-aggressive gases
10
Gauge 0 … 0.10 … 0.250 … 0.40 … 1.0
3.05 × 3.05 Non-aggressive gases and fluids
11
C29 Absolute, back side 0 … 1.00 … 2.50 … 4.00 … 10.0
2.20 × 2.70 Non-aggressive gases and fluids
12
C32 Absolute, back side 0 … 1.60 … 4.00 … 10.00 … 25.0
1.65 × 1.65 Non-aggressive gases and fluids
13
Absolute, front side 0 … 1.60 … 4.00 … 10.00 … 25.0
1.65 × 1.65 Dry non-aggressive gases
14
Gauge 0 … 0.40 … 1.60 … 4.00 … 10.00 … 25.0
1.65 × 1.65 Non-aggressive gases and fluids
15
C33 Absolute, front side 0 … 1.20 … 2.50 … 10.0
1.00 × 1.00 Dry non-aggressive gases
16
Type Pressure measurement Rated pressure ranges bar
Area dimensionsmm
Specific feature Page
Dies with specific features
C32 Gauge, gold bond pads 0 … 1.60 … 4.00 … 10.00 … 25.0
1.65 × 1.65 Higher resistance against corrosion
17
Gauge, gold layer 0 … 1.60 … 4.00 … 10.00 … 25.0
1.65 × 1.65 For metal based soldering
18
Gauge, protection layer 0 … 0.4 1.65 × 1.65 Higher resistance against aggressive gases and fluids
19
10 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.
Standard DiesC27, absolute pressure measurement, front side
For 1) … 16) please refer to page 20.
Dimensional drawing Circuit diagram Cross-section
Silicon
Glass
TDS0012-8-E
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 5.0 V
Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)2.1 2.4 2.7 10–3/K
βRb 4 6 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full scale output, normal, FSON = 120 mV)
LTSV012) –0.45 ±0.3 +0.45 % FSON
Rated Over Burst Nonlinearity Offset voltage
Temperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. min./ typ./ max.
B58600C5010A003 0.25 0.75 4.8 ±0.2/ ±0.3 –30/ +30 –2 … +2 –4 … +4 300/ 400/ 480
B58600C5010A004 0.4 1.2 2.0 ±0.2/ ±0.3 –30/ +30 –2 … +2 –4 … +4 225/ 300/ 375
B58600C5010A005 1.0 3.0 5.0 ±0.2/ ±0.4 –30/ +30 –2 … +2 –4 … +4 90/ 120/ 150
Features
�z Dimensions (area × height): 3.05 mm × 3.05 mm × 0.9 mm�z Media: Dry non-aggressive gases�z Rated pressure ranges: 0 … 0.250 bar to 0 … 1 bar
11© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.
Standard DiesC27, gauge pressure measurement
For 1) … 16) please refer to page 20.
Dimensional drawing Circuit diagram Cross-section
Silicon
Glass
TDS0013-7-E
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 5.0 V
Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)2.1 2.4 2.7 10–3/K
βRb 4 6 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full scale output, normal, FSON = 120 mV)
LTSV012) –0.45 ±0.3 +0.45 % FSON
Rated Over Burst *)Nonlinearity Offset
voltageTemperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. min./ typ./ max.
B58601C5010A006 0.1 0.25 0.3 ±0.5/ ±0.75 –30/ +30 –2 … +2 –4 … +4 350/ 500/ 700
B58601C5010A007 0.25 0.625 0.75 ±0.35/ ±0.5 –30/ +30 –2 … +2 –4 … +4 300/ 400/ 480
B58601C5010A008 0.4 1.0 1.2 ±0.2/ ±0.3 –30/ +30 –2 … +2 –4 … +4 225/ 300/ 375
B58601C5010A009 1.0 2.5 3.0 ±0.2/ ±0.3 –30/ +30 –2 … +2 –4 … +4 90/ 120/ 150
Features
�z Dimensions (area × height): 3.05 mm × 3.05 mm × 0.9 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 0.1 bar to 0 … 1 bar
*) Higher burst pressure on request.
12 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.
For 1) … 16) please refer to page 20.
Dimensional drawing Circuit diagram Cross-section
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 5.0 V
Total bridge resistance Rb @ 25 °C 5) 2.1 2.7 3.3 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)1.9 2.2 2.5 10–3/K
βRb 4 6 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full scale output, normal, FSON = 120 mV)
LTSV012) –0.45 ±0.3 +0.45 % FSON
Rated Over Burst *)Nonlinearity Offset
voltageTemperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. min./ typ./ max.
B58600E0410A002 1.0 2.5 3.0 ±0.2/ ±0.3 –65/ +30 –22 –45 60/ 85/ 105
B58600E0410A003 2.5 6.25 7.5 ±0.2/ ±0.3 –55/ +30 –13 –25 35/ 50/ 65
B58600E0410A004 4.0 10.0 12.0 ±0.2/ ±0.3 –45/ +30 –9 –18 20/ 30/ 40
B58600E0410A005 10.0 25.0 30.0 ±0.2/ ±0.3 –35/ +30 –5 –10 9/ 13/ 16
Features
�z Dimensions (area × height): 2.2 mm × 2.7 mm × 1.6 mm�z Media: Non–aggressive gases and fluids�z Rated pressure ranges: 0 … 1 bar to 0 … 10 bar
Standard DiesC29, absolute pressure measurement, back side
*) Higher burst pressure on request.
13© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.
Dimensional drawing Circuit diagram Cross-section
Glass
TDS0036-Q-E
Glass top
Silicon
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 5.0 V
Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)2.0 2.3 2.7 10–3/K
βRb 3 5 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full scale output, normal, FSON = 120 mV)
LTSV012) –0.3 ±0.1 0.3 % FSON
Rated Over Burst *)Nonlinearity Offset
voltageTemperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. min./ typ./ max.
B58600H8400A037 1.6 4.0 4.8 ±0.2/ ±0.3 –50/ +25 –10 –20 45/ 70/ 95
B58600H8400A039 4.0 10.0 12.0 ±0.2/ ±0.3 –40/ +25 –5 … +5 –10 23/ 30/ 38
B58600H8400A038 10.0 25.0 30.0 ±0.2/ ±0.3 –35/ +25 –3 … +3 –7 9/ 12/ 15
B58600H8400A040 25.0 62.5 75.0 ±0.2/ ±0.3 –30/ +25 –3 … +3 –6 3.6/ 4.8/ 6
For 1) … 16) please refer to page 20.
Features
�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.5 mm�z Media: Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 1.6 bar to 0 … 25 bar
Standard DiesC32, absolute pressure measurement, back side
*) Higher burst pressure on request.
14 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.
For 1) … 16) please refer to page 20.
Dimensional drawing Circuit diagram Cross-section
Silicon
Glass
TDS0068-C-E
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 5.0 V
Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)2.0 2.3 2.7 10–3/K
βRb 3 5 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full scale output, normal, FSON = 120 mV)
LTSV012) –0.3 ±0.1 0.3 % FSON
Rated Over Burst Nonlinearity Offset voltage
Temperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. min./ typ./ max.
B58600H8000A001 1.6 4.8 8 ±0.2/ ±0.3 –30/ +30 –4 … +4 –8 … +8 45/ 70/ 95
B58600H8000A002 4 12 20 ±0.2/ ±0.3 –30/ +30 –4 … +4 –8 … +8 23/ 30/ 38
B58600H8000A003 10 30 50 ±0.2/ ±0.4 –30/ +30 –4 … +4 –8 … +8 9/ 12/ 15
B58600H8000A004 25 75 125 ±0.2/ ±0.4 –30/ +30 –4 … +4 –8 … +8 3.6/ 4.8/ 6
Features
�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media: Dry non-aggressive gases�z Rated pressure ranges: 0 … 1.6 bar to 0 … 25 bar
�z Electrical shield on front side
Standard DiesC32, absolute pressure measurement, front side
15© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.
Dimensional drawing Circuit diagram Cross-section
Silicon
Glass
TDS0069-F-E
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 5.0 V
Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)2.0 2.3 2.7 10–3/K
βRb 3 5 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full-scale output, normal, FSON = 120 mV)
LTSV012)
pr4) ≥ 1.6 bar –0.2 ±0.1 +0.2 % FSON
pr4) = 0.6 bar –0.35 ±0.15 +0.35 % FSON
Rated Over Burst *)Nonlinearity Offset
voltageTemperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. min./ typ./ max.
Upon request 0.4 1.0 1.2 ±0.7/ ±1.0 –25/ +25 –8 … +8 –16 … +16 185/ 225/ 315
B58600H8400A037 1.6 4.0 4.8 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 45/ 70/ 95
B58600H8400A039 4.0 10.0 12.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 23/ 30/ 38
B58600H8400A038 10.0 25.0 30.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 9/ 12/ 15
B58600H8400A040 25.0 62.5 75.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 3.6/ 4.8/ 6
For 1) … 16) please refer to page 20.
Features
�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 0.4 bar to 0 … 25 bar
�z Electrical shield on front side
Standard DiesC32, gauge pressure measurement
*) Higher burst pressure on request.
16 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.
Dimensional drawing Circuit diagram Cross-section
Silicon
TDS0064-Y-E
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 6.0 V
Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)2.1 2.4 2.7 10–3/K
βRb 4 6 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full scale output, normal, FSON = 120 mV)
LTSV012) – ±0.1 – % FSON
Rated Over Burst Nonlinearity Offset voltage
Temperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. typ.
B58600I0000A001 1.2 3.6 6.0 ±0.2/ ±0.3 –30/ +30 –4 … +4 –4 … +4 80
Upon request 2.5 7.5 12.5 ±0.2/ ±0.3 –30/ +30 –4 … +4 –4 … +4 50
Upon request 10.0 30.0 50.0 ±0.2/ ±0.3 –30/ +30 –4 … +4 –4 … +4 15
For 1) … 16) please refer to page 20.
Features
�z Dimensions (area × height): 1.0 mm × 1.0 mm × 0.4 mm�z Media: Dry non-aggressive gases�z Rated pressure ranges: 0 … 1.2 bar to 0 … 10 bar
�z Electrical shield on front side
Standard DiesC33, absolute pressure measurement, front side
17© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.
For 1) … 16) please refer to page 20.
Dimensional drawing Circuit diagram Cross-section
Silicon
Glass
TDS0069-F-E
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 5.0 V
Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)2.0 2.3 2.7 10–3/K
βRb 3 5 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full scale output, normal, FSON = 120 mV)
LTSV012) –0.2 ±0.1 +0.2 % FSON
Rated Over Burst *)Nonlinearity Offset
voltageTemperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. min./ typ./ max.
Upon request 1.6 4.0 4.8 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 45/ 70/ 95
Upon request 4 10 12 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 23/ 30/ 38
Upon request 10 25 30 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 9/ 12/ 15
Upon request 25 62.5 75 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 3.6/ 4.8/ 6
Features
�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 1.6 bar to 0 … 25 bar
�z Electrical shield on front side�z Gold bond pads
Dies with Specific FeaturesC32, gauge pressure measurement, gold bond pads for improved corrosion resistance
*) Higher burst pressure on request.
18 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.
Dimensional drawing Circuit diagram Cross-section
Silicon
Glass
TDS0069-F-E
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 5.0 V
Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)2.0 2.3 2.7 10–3/K
βRb 3 5 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full scale output, normal, FSON = 120 mV)
LTSV012) –0.2 ±0.1 +0.2 % FSON
Rated Over Burst *)Nonlinearity Offset
voltageTemperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. min./ typ./ max.
Upon request 1.6 4.0 4.8 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 45/ 70/ 95
Upon request 4.0 10.0 12.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 23/ 30/ 38
Upon request 10.0 25.0 30.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 9/ 12/ 15
Upon request 25.0 62.5 75.0 ±0.2/ ±0.3 –25/ +25 –4 … +4 –8 … +8 3.6/ 4.8/ 6
For 1) … 16) please refer to page 20.
Features
�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 1.6 bar to 0 … 25 bar
�z Electrical shield on front side�z Gold layer on back side
Dies with Specific FeaturesC32, gauge pressure measurement, gold layer for back side die soldering
*) Higher burst pressure on request.
19© EPCOS AG 2012 Please read Important notes on page 4 and Cautions and warnings on page 21.
Dimensional drawing Circuit diagram Cross-section
Silicon
Glass
TDS0069-F-E
Technical data
Symbol Conditions Min. Typ. Max. Unit
Temperature maximum ratings
Operating temperature range Top
1) –40 – 135 °C
For t < 15 min –40 – 140 °C
Storage temperature range Tstg2) –40 – 150 °C
Electrical specifications @ VDD = 5 V
Maximum supply voltage VDD Without damage 3) – – 10 V
Operating supply voltage VDD4) 1.0 – 5.0 V
Total bridge resistance Rb @ 25 °C 5) 2.6 3.3 4.0 kW
Temperature coefficient of total bridge resistanceaRb
@ 25 °C 6)2.0 2.3 2.7 10–3/K
βRb 3 5 8 10–6/K2
Temperature coefficient of sensitivityaS
@ 25 °C 10)–2.5 –2.2 –1.9 10–3/K
βS 3 5 8 10–6/K2
Pressure hysteresis pHys 11) –0.1 – 0.1 % FS
Long-term stability of offset (Full scale output, normal, FSON = 120 mV)
LTSV012) –0.2 ±0.1 +0.2 % FSON
Rated Over Burst *)Nonlinearity Offset
voltageTemperature coefficient of offset voltage
Sensitivity
pressure
Rated pressure @ 25 °C, VDD = 5 V
Condition 13) 14) 15) 16) 7) Unglued 9) 8)
Symbol pr pov pburst L V0 TCV0+ TCV0– S
Unit bar bar bar % FS mV µV/KV µV/KV mV/bar
Ordering codes
typ./ max. min./ max. typ. min./ typ./ max.
Upon request 0.4 1.0 1.2 ±0.7/ ±1.0 –25/ +25 –8 … +8 –16 … +16 185/ 225/ 315
For 1) … 16) please refer to page 20.
Features
�z Dimensions (area × height): 1.65 mm × 1.65 mm × 1.1 mm�z Media (back side): Non-aggressive gases and fluids�z Rated pressure ranges: 0 … 0.4 bar to 0 … 1 bar
�z Electrical shield on front side�z Protection layer on back side of diaphragm
Dies with Specific FeaturesC32, gauge pressure measurement, protection layer for improved media resistance of back side diaphragm
*) Higher burst pressure on request.
20 © EPCOS AG 2012Please read Important notes on page 4 and Cautions and warnings on page 21.
Symbols and Terms
1) Operating temperature range Top
This is the operating temperature range Top,min to Top,max. Because most of the sensor parameters depend on assembling conditions like glueing, wire bonding, etc., the die has to be tested over the operating temperature range by the customer fully assembled.
2) Storage temperature range Tstg
If pressure sensor dies are stored in the temperature range Tstg,min to Tstg,max without applied voltage, this will not affect the performance of the pressure sensor dies.
3) Maximum supply voltage VDD
This is the maximum permissible voltage that may be ap-plied to the piezoresistive bridge circuit without damage.
4) Operating supply voltage VDD
Pressure sensor parameters are defined for a power sup-ply voltage of VDD = 5 V. For the operating voltage range VDD,min to VDD,max the ratiometric parameters r(VDD) such as sensitivity, offset voltage and the temperature coefficient of the offset voltage are defined by:
5) Total bridge resistance Rb
Total bridge resistance is defined between pads X5 and X2 (see the dimensional drawing in the data sheet) of the closed piezoresistive bridge circuit. In approximation the total bridge resistance equals the output impedance of the piezoresistive bridge circuit.
6) Temperature coefficients of total bridge resistance aRb and βRb:The temperature coefficients of first and second order are defined by the polynomial:
Rb (T) = Rb (T = 25 °C) 1 + αRb (T – 25 °C) + βRb (T – 25 °C)2
The coefficients aRb and βRb are calculated using the three measurement points of Rb(T) at Tmeas,min = –20 °C to Tmeas,max = 80 °C with TR = 25 °C.
7) Offset voltage V0
The offset voltage V0 is the output voltage Vout(p = 0 bar) at zero gauge/ absolute pressure and for a supply volt-age VDD = 5 V.
8) Sensitivity SSensitivity is defined for a bridge voltage supply VDD = 5 V. It can be determined by the formula:
S =Vout (pr,max) – V0
pr,max
9) Temperature coefficient of offset voltage TCV0
The temperature coefficients of offset voltage are defined for a supply voltage VDD = 5 V. TCV0+ and TCV0– are defined for the measurement temperature range Tmin = –40 °C to Tmax = 135 °C by:
10) Temperature coefficient of sensitivity aS and βS:The temperature coefficients of first and second order are defined by the polynomial:
S (T) = S (T = 25 °C) 1 + αS (T – 25 °C) + βS (T – 25 °C)2
The coefficients aS and βS are calculated using three mea-surement points of S(T) at Tmeas,min = –20 °C to Tmeas,max = 80 °C with TR = 25 °C.
11) Pressure hysteresis pHysPressure hysteresis is the difference between output voltages at constant pressure and constant temperature while applying a pressure cycle with pressure steps of pr, min, p1, p2, p3, pr,max, p3, p2, p1, pr,min:
pHys =Vout,2 (pk) – Vout,1 (pk)
FS
With k = min., 1, 2, 3, max. the pressure steps are: pr,min = 0, p1 = 0.25 · pr,max, p2 = 0.5 · pr,max, p3 = 0.75 · pr,max, pr,max.
12) Reliability dataFor long-term stability of offset voltage LTSV0 refer to Aktiv Sensor’s standard AS100001 in chapter “Reliability data” on the internet.
13) Rated pressure range pr
For the rated pressure range 0 bar to pr,max the pressure sensor die output characteristic is according to this specification.
14) Overpressure pOV Pressure cycles in the pressure range from 0 bar to pov do not affect the performance of the pressure sensor dies.
15) Burst pressure pburst
The diaphragm of the sensor die will not suffer mechani-cal destruction up to the burst pressure pburst.
16) Nonlinearity LNonlinearity is measured using the endpoint method. Assuming a characteristic, this can be approximated by a polynomial of second order, where the maximum is at px = pr,max/2. The nonlinearity is defined at px = pr,max/2, using the equation:
L =Vout (px) – V0
Vout (pr,max) – V0
px
pr,max
TCV0+ =V0 (Tmax) – V0 (25 °C)
Tmax – 25 °CTCV0– =
V0 (Tmin) – V0 (25 °C)
Tmin – 25 °C
21Please read Important notes on page 4.© EPCOS AG 2012
Cautions and Warnings
Storage
All pressure sensors should be stored in their original pack-age. They should not be placed in harmful environments such as corrosive gases nor exposed to heat or direct sunlight, which may cause deformations. Similar effects may result from extreme storage temperatures and climatic conditions. Avoid storing the sensor dies in an environment where condensation may occur or in a location exposed to corrosive gases, which will adversely affect their perfor-mance. Plastic materials should not be used for wrapping/ packing when storing or transporting these dies, as they may get charged. Pressure sensor dies should be used soon after opening their seal and packaging.
Storage conditions
Materials used for storage should be ESD protective according to JESD625, non-outgassing, and chemi-cally stable. Furthermore the following storage conditions should be observed:�z Storage in cabinets (if shipping package is opened)
– Atmosphere: inert gas, dry air or dry nitrogen – Temperature range (in cabinet): 20 ±3 °C – Relative humidity range (in cabinet): < 40% – Particle count (in cabinet): class 6 of ISO 14644:1999 (equivalent to FED STD 209E class 1000)
– Shelf life under these conditions: 24 months for deliveries in trays
– Shelf life under these conditions: 12 months for deliveries on tape
�z Storage in containers (if shipping package is sealed) – Sealed as delivered or backfilled with inert gas, dry air or dry nitrogen and re-sealed
– Temperature range: 20 ±3 °C – Relative humidity range: < 50% – Particle count (during backfill): class 6 of ISO 14644:1999 (equivalent to FED STD 209E class 1000)
– Shelf life under these conditions: 12 months for deliveries in trays
– Shelf life under these conditions: 6 months for deliveries on tape
Operation
Media compatibility with the pressure sensors must be ensured to prevent their failure. The use of other media can cause damage and malfunction. Never use pressure sen-sors in atmospheres containing explosive liquids or gases.Ensure pressure equalization to the environment, if gauge pressure sensors are used. Avoid operating pressure sen-sors in an environment where condensation may occur or in a location exposed to corrosive gases. These environ-ments adversely affect their performance.If operating pressure is above the rated overpressure, it may change the output characteristics. This may also
happen with pressure sensor dies if an incorrect mounting method is used. Make sure the applicable pressure does not exceed the overpressure, as it may damage the pres-sure sensor.
Do not exceed the maximum rated supply voltage or rated storage temperature range, as it may damage the pressure sensor.
Temperature variations in both the ambient conditions and the media (liquid or gas) can affect the accuracy of the output signal from pressure sensors. Be sure to check the operating temperature range and thermal error specifica-tion of the pressure sensors to determine their suitability for the application.
Connections must be wired in accordance with the termi-nal assignment specified in the data sheet. Care should be taken as reversed pin connections can damage the pressure sensors or degrade their performance. Contact between the pressure sensor terminals and metals or other materials may cause errors in the output characteristic.
Design notes
This document describes the mechanical, electrical and physical requirements of a piezoresistive sensor die for measuring pressure. The specified parameters apply when pressure is applied (to the diaphragm) in the direction shown in the cross-section. Pressure applied in the other direction may yield different results. Most of the param-eters are influenced by assembly conditions. Hence these parameters and the reliability have to be specified for each specific application and tested over its temperature range by the customer.
Handling/ mounting
Pressure sensor dies should be handled appropriately and not be touched with bare hands. They should only be picked up manually by the sides using tweezers. Their top surface should never be touched with tweezers. Latex gloves should not be used for handling, as this will inhibit the curing of the adhesive used to bond the die to the carrier. The sensor die must not be contaminated during manufacturing processes (glueing, soldering, silk-screen process).
The package of pressure sensor dies should not to be opened until the die is mounted and should be closed after use. The sensor die must not be cleaned. The sensor die must not be damaged during the assembly process (espe-cially scratches must be avoided).
22 © EPCOS AG 2012
Get in Contact
EuropeAustria, Bulgaria, Greece,MacedoniaEPCOS OHGVienna/AustriaT +43 51 70 72 56 37F +43 51 70 75 56 [email protected]
Czech RepublicEPCOS s.r.o.PragueT +420 2 33 03 22 81F +420 2 33 03 22 [email protected]
Finland, EstoniaEPCOS Nordic OYEspooT +358 9 54 80 70 00F +358 9 54 80 70 [email protected]
France, Belgium,Luxembourg, MaltaEPCOS SASPantin/FranceT +33 1 49 46 67 89F +33 1 49 46 67 [email protected]
Germany, Liechtenstein,Netherlands, SwitzerlandEPCOS AGCustomer ServiceMunich/GermanyT (D) 0180 500 33 48(0.14 Euro/min.)(NL) +31 70 33 10 611(CH) +49 89 63 62 55 40
F +49 89 63 62 80 [email protected]
HungaryEPCOS ElektronikaiAlkatrész Kft.BudapestT +36 1 436 07 20F +36 1 436 07 [email protected]
ItalyTDK-EPC Italy S.r.l.MilanT +39 02 50 99 54 25F +39 02 50 99 54 [email protected]
Poland, Latvia, LithuaniaEPCOS Polska Sp. z o.oWarsaw/PolandT +48 22 24 60 409F +48 22 24 60 [email protected]
PortugalEPCOS 2 Portugal LDAÉvoraT +351 91 75 67 927F +351 21 49 33 [email protected]
RomaniaEPCOS Sales RepresentativeTimisoaraT +40 72 31 14 [email protected]
Russia, Belarus, Kazakhstan,Moldavia, UkraineEPCOS LLCMoscow/RussiaT +7 495 663 21 00 / [email protected]
SlovakiaEPCOS Sales RepresentativeDolný KubínT +42 1 43 5 82 36 73F +42 1 43 5 82 37 [email protected]
Slovenia, Serbia, Croatia,Bosnia & Herzegovina,MontenegroEPCOS Sales RepresentativeŠkofljica/SloveniaT +386 599 56 35 3F +386 599 56 35 [email protected]
SpainEPCOS Electronic ComponentsS.A.GetafeT +34 91 514 71 61F +34 91 514 70 [email protected]
Sweden, Iceland, Denmark,NorwayEPCOS Nordic ABKista/SwedenT +46 8 4 77 27 00F +46 8 4 77 27 [email protected]
TurkeyEPCOS AGLiaison OfficeIstanbulT +90 216 5 69 81 01F +90 216 4 64 07 [email protected]
United Kingdom, IrelandEPCOS UK Ltd.Bracknell/UKT +44 13 44 38 15 10F +44 13 44 38 15 [email protected]
AsiaAfghanistan, Iran, Iraq,Jordan, Lebanon,Pakistan, SyriaEPCOS AGLiaison OfficeIstanbul/TurkeyT +90 216 5 69 81 01F +90 216 4 64 07 [email protected]
ChinaEPCOS (China) Investment Ltd.EPCOS (Shanghai) Ltd.ShanghaiT +86 21 22 19 15 00F +86 21 22 19 15 [email protected]
Hong KongEPCOS LimitedHong KongT +852 36 69 82 00F +852 36 69 82 [email protected]
India, Bahrain, Bangladesh,Kuwait, Nepal, Oman, Qatar,Saudi Arabia, Sri Lanka,United Arab EmiratesEPCOS India Private Ltd.Bangalore/IndiaT +91 80 40 39 06 15F +91 80 40 39 06 [email protected]
IsraelNisko Projects Electronics &Communications (1999) Ltd.Tel AvivT +972 37 65 73 00F +972 37 65 73 [email protected]
JapanTDK-EPC CorporationTokyoT +81 3 52 01 72 41F +81 3 52 01 72 [email protected]
KoreaTDK-EPC Korea Co. Ltd.SeoulT +82 2 21 56 68 18F +82 2 21 56 68 [email protected]
MalaysiaEPCOS RDC SDN BHDNilaiT +60 6 79 98 168F +60 6 79 98 [email protected]
Philippinesc/o TDK Electronics PhilippinesCorporationBiñanT +63 49 541 31 41 66 30 / 31F +63 49 541 31 [email protected]
Singapore, Indonesia,Thailand, VietnamEPCOS PTE LTDSingaporeT +65 68 41 20 11F +65 67 44 69 [email protected]
TaiwanEPCOS Taiwan Co. Ltd.TaipeiT +886 2 26 55 76 76F +886 2 27 82 03 [email protected]
AmericasUSA, Canada, MexicoEPCOS, Inc.Iselin, NJ/USAT +1 732 9 06 43 00F +1 732 9 06 43 [email protected]
South AmericaEPCOS do Brasil Ltda.São Paulo/BrazilT +55 11 36 12 51 87F +55 11 36 12 51 [email protected]
AustraliaAustralia, New ZealandElectronic ComponentSolutions Pty LtdMelbourne/AustraliaT +61 3 85 61 19 99F +61 3 95 74 70 [email protected]
AfricaEgyptEPCOS AGLiaison OfficeIstanbul/TurkeyT +90 216 5 69 81 01F +90 216 4 64 07 [email protected]
Morocco, TunisiaEPCOS SASPantin/FranceT +33 1 49 46 67 89F +33 1 49 46 67 [email protected]
South AfricaElectrocomp (PTY) Ltd.SandtonT +27 11 458 90 00 32F +27 11 458 90 [email protected]
The addresses of our worldwide distributors and regional sales offices are available at www.epcos.com/sales