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2010-01-14 Page 1Copyright © Infineon Technologies 2010. All rights reserved.
Power Semiconductor – State of the Art and Development Trends
By
Leo Lorenz
Infineon Technologies
Munich
E-mail: [email protected]
Focus Application: Power Devices for Automotive & Industry
Outline:
Indroduction
Power Devices & SMART Power IC´s for Automotive Application
- SMART Power IC´s
- Discrete Power Devices (Power MOSFET, SiC, IGBT´s)
Development Trends and Challenges
2010-01-14 Page 2Copyright © Infineon Technologies 2010. All rights reserved.
Power Semiconductor – State of the Art and Development Trends
Key Message: The most inexpensive and environmental friendlyenergy is:
The Energy We Do Not Consume Nor Waste
Driving Technology:
Power Devices & SMART Power IC´s
System Integration
Precise Control of Energy Flow
Demand oriented operation of load
2010-01-14 Page 3Copyright © Infineon Technologies 2010. All rights reserved.
NinNout
ControlDesired value
Actual value
LoadSource
AC: V, f, j, 1-Phase, 3-PhaseDC: V, +/-
AC: V, f, j, 1-Phase, 3-PhaseDC: V, +/-
Very Basic Structure of any Power Electronic System(Inverter, Converter)
2010-01-14 Page 4Copyright © Infineon Technologies 2010. All rights reserved.
Description of SystemsSense – Process – Actuate in Closed Feedback Loop
Components of System
Sensors
PowerDevices
Micro-controlle
r
Solution
Components
eP WL
LWS
ACROPOLIS
Challenges
Q & A
2010-01-14 Page 5Copyright © Infineon Technologies 2010. All rights reserved.
Energy Consumption and Control of Energyflowthrough Power Electronics
12 billion kilowatts every hour of day of every year
20
Source: CPES/EPRI
16
12
8
4
01800 1900 2000 2100 Year
20 40 60 80 20 40 60 80 20 40 60 80
Total Energy
Electrical Energy 30% savings withimproved powerelectronics(components & systems)
Motor55%
Internet10%
Lighting21%
Other14%
40%ElectricalEnergy
Total Energy
1997: 40%2010: 80%
60% 20%
Power Electronics Control Unit
2010-01-14 Page 6Copyright © Infineon Technologies 2010. All rights reserved.
Major Consumers of Electrical Energy – Savings Potential
Source: ZVEI, Siemens, CEMEP, CPES, EPA, NRDC, IFX
Today: 40% out of the overall energy consumption is electrical energyC
onsu
mer
s el
ectri
cal e
nerg
y (w
w)
Energy Split: ww Energy saving potential
Key technology
Power supply:- stand-by, - active, …
- Computing
EC-BallastDaylight dimmingHID, LED, …
Factory autom.Process engineering,Heavy industry,Light industry, …
Transportation:Train, Bus, Car, …
Home appliance:Freedge, WM,HVAC
80+ / 90+
Electronic control
IGBTModulesCiPOSEMCONCoolMOSCTOptimized µC8 bit / 16 bit / 32 bit
>90%>>1%
>>1%
>25%
>30%
>25%
>40%
CoolMOS, SiCSmart control ICCoolSETLow cost µC
CoolMOSSmart ballast ICLow cost µC
I&COthers
24%
Lighting21%
Motor control55%
- stand-by- active
Variable Speed Drive (VSD)
VSD + Reverse Energy
VSD
confidential
2010-01-14 Page 7Copyright © Infineon Technologies 2010. All rights reserved.
Motor drives is about RPM control enablingincrease in overall system efficiency
Applications
Invert
er
base
d
mo
tor
The inverter supplies the drive with exactly thepower it needs, minimizing energy losses
Energy saving of ~ 25-40% is possible
AC 240-690 V
Energy grid Inverter &Power Electronic
Inverter output 3~
2010-01-14 Page 8Copyright © Infineon Technologies 2010. All rights reserved.
Motor Drives: Basic Principle
Diode Rectifier
3 x 400V /50HzL1
L2
L3
+
-
U[V] U[V]
IGBT Inverter
UVW
U[V] U[V]
AC voltage
Fixed frequency 50Hz
AC-voltage
variable frequency 0-300Hz
AC-InputMains AC-Output
Motor
DC-Link
2010-01-14 Page 9Copyright © Infineon Technologies 2010. All rights reserved.
History of Power Semiconductors
IGBT
Cool-MOS
MOS-transistor
GTO
bipolar transistor
thyristor
diode
400V - 1000V;1A - 50A
20V - 1000V;1A - 100A
year
small power medium power
197019601950
voltage range;current range
200019901980
600V - 8000V;1A - >1000A
> 3000V;> 500A
> 3000V;> 500A
<1400V;1A - 300A
600V - 8000V;10A - >1000A
600V - 6500V;1A - >1000A
GCT
2010-01-14 Page 10Copyright © Infineon Technologies 2010. All rights reserved.
Application for Power Semiconductor Components
Source: IPEC 2000 Semiconductor switching frequency10 Hz 100 Hz 1 kHz 10 kHz 100 kHz
Capacity of the converter system
Reative compensators AC-AC interties1 GW
100 MW
10 MW
1 MW
100 kW
10 kW
1 kW
100 W
High current supplies large drives
Heavy locomotives
Large solar power plants trams, busses
Electric cars
Switched mode power supplies
Thyristor
Year 2005Tendency
GTO
IGBT
FET
Ultra high power
High power
Mediumpower
Low power
the higherthe converter capacity,the lowerthe switching frequency
HVDC
IFX 2136 1099/MCD
2010-01-14 Page 11Copyright © Infineon Technologies 2010. All rights reserved.
Automotive Applications
New fields:Cam shaft
replacement,42V/12V DC/DC
converter
Starter –Generator
(Ta >150°C
Brake by wire(Ta >150°C)
Steer by wire,intelligent power
management
Power seatPowerwindow
Wiper
Sun roof
Gearbox /Clutch
Enginemanagement
Climate control
Starter / FanPower steering
Headlightbeam control
Doorlock
Mirrorcontrol
Brakes
SMART Power Bridges 1A < I < 250A_ _
2010-01-14 Page 12Copyright © Infineon Technologies 2010. All rights reserved.
Global CO2 Targets
It's the law: 35 mpg CAFEAutomotive News Dec. 19th 2007Cars: 35 mpg by 2020
EU Proposes steep fines to cut car CO2 from 2012Automotive News Dec. 20th 2007Cars: 120gCO2/km by 2012+10 g coming from biofuels …
60.1854.1649.2445.1341.6638.6935.00MPG
3.914.344.785.215.656.086.72l / 100km
90100110120130140155g CO2/km
Conversion table for regular gasoline engine
90
100
110
120
130
140
150
160
170
180
190
200
1994
1996
1998
2000
2002
2004
2006
2008
2010
2012
2014
2016
2018
2020
gC
O2
/km
161 gCO2/km
130 gCO2/km
120 gCO2/km
95 gCO2/km
OEM Actual
OEM Voluntary
Target
EU Proposal(Dec, 2007)
Alternative Proposal
incl. BioFuel(Jan, 2008)
2010-01-14 Page 13Copyright © Infineon Technologies 2010. All rights reserved.
LIN-systems connected via CAN
System Architecture of Modern Cars A Complex Network of Interacting Sub-Systems
Source: C. Bracklo, 1st Intl LIN Conf., Sep02
>9km cables with >100kg for > 70 ECUsHow to manage this complexity at low cost?
Solution
Components
eP WL
LWS
ACROPOLIS
Challenges
Q & A
2010-01-14 Page 14Copyright © Infineon Technologies 2010. All rights reserved.
Control: 24 lampsSwitched Power:650WDissipated Power: 7W
Light Control Module : Block diagram
CHMSL (LED)
Indicator
Reverse Tail Indicator Brake Fog
Park Indicator High Low Fog Interior (dim) Relais Fog Low High Indicator Park
Indicator
Spare 5A Foot well
BTS44316mΩ
BTS44316mΩ
BTS44316mΩ
BTS44316mΩ
BTS44316mΩ
BTS44316mΩ
BTS44316mΩ
TLE 622516mΩ
BTS13416mΩ
BTS7244x90mΩ
BTS7164x140mΩ
BTS7244x90mΩ
BTS7244x90mΩ
BTS7244x90mΩ
License Plate Brake Indicator Tail Reverse
TLE 6258LIN
TLE 6252CAN
Vbat
TLE 42685V LDO
C164CI
To rest of car
To rest of car
2010-01-14 Page 15Copyright © Infineon Technologies 2010. All rights reserved.
IN
ST
ESD Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifter
Rectifier
Limit forunclampedind. loads
Gate
protection
Currentlimit
3
1
Signal GND
GND
2
VLogic
Overvoltageprotection
+ Vbb
PROFET®
OUT
4
6, 7
Load GND
Load
GND
RO
CurrentSense
OutputVoltage
detection
RIS
IS5I IS
IL
Short circuit
detection
Temperature
sensor
Block Diagram of a Single-Channel Smart High Side Switch
2010-01-14 Page 16Copyright © Infineon Technologies 2010. All rights reserved.
new 3 series“old BMW“ 5 / 7 series
Body Control Module Evolution – Example from BMW
Smart Power Semiconductors significantly contributed to the Automotive Light Module Evolution
confidential
2010-01-14 Page 17Copyright © Infineon Technologies 2010. All rights reserved.
Semiconductor Solutions enables improved VehiclePerformance and Fuel Consumption
Source: VDA
Average fuel consumption of European cars
8 bit 16 bit 32 bit
Horse power
Average Fuelconsumption
2010-01-14 Page 18Copyright © Infineon Technologies 2010. All rights reserved.
HVAC Fan
Linear controlled PWM controlled
Linear controlled MOSFETs is used as variable resistor in series with DC-brush motor
DC-brush motor with half bridge for PWM (8 bit µC / half-bridge / Π-Filter)
CO2 Benefits:
Reduced power losses ~ 80WEstimated additional costs ~ 10€Reduced fuel consumption ~ 0.08l / 100kmCO2-reduction ~ 1.9 g/km Pays off a
fter le
ss
than 8.000 km
or 0.5 years
Main benefit Reduced power losses in ECU
Feasibility available technology, complexity: low
Source : Continental
2010-01-14 Page 19Copyright © Infineon Technologies 2010. All rights reserved.
Overview of CO2-Reduction Examples
Pay-back
[years]
Cost adder
[€]
CO2-reduction
[g CO2 / km]
Application
1605.9EPS
1201.9Fuel pump
0.5101.9HVAC Fan
51803.5Alternator
0.8557.1Water pump
0.451.2Infotainment
3.7451.2Use of LED
0.870.8PWM for bulbs
2010-01-14 Page 20Copyright © Infineon Technologies 2010. All rights reserved.
Product SolutionsDC/AC Converter for Drive (Car)
LoadLoad
E-Motor /GeneratorDC/DC
HVBattery DC/AC
DC/DC
12 V Battery
optional
HVAC
DC/AC
HVAC
DC/AC
HVAC
DC/AC
LoadLoad
Six Pack Power Module with IGBT
Switching Frequency: 5-20kHz
Max. OutputFrequency: 1kHz
Bus Voltage: 120-450V or 500-700V
Battery Voltage: 120-450V
Output Power: 10-120kW
Motor: Permanent Magnet or
Squirrel Cage
2010-01-14 Page 21Copyright © Infineon Technologies 2010. All rights reserved.
We meet all requirements forcost effective automotive power products
TEMPFETprotectedlow-side-SwitchOverloadprotectionThermal shutdown
MOSFET/IGBT
HITFETfully protectedlow-side-SwitchOverload protectionCurrent limitationShort-circuit protectionOvervoltage protectionOpen load detectionThermal shutdown
PROFETfully protectedhigh-side-SwitchIntegrated chargepumpOverload protectionCurrent limitationShort-circuitprotectionOvervoltageprotectionOpen load detectionDiagnostic feedbackMulti-Channel
Power System IC’sSmart PowerSystem Integration:ABS / AIRBAGPowertrainSmart
Power IC’sMulti-Channel SwitchesBridgesDriver-IC‘sVoltage RegulatorsCCAN/LIN TransceiverDC/DC Converter
2010-01-14 Page 22Copyright © Infineon Technologies 2010. All rights reserved.
Switching Application
+ Vbb
Load
LS
+ Vbb
G
D
S
RDS(ON)UTrans = RDS*I
UL = Ubb - UTransI
ON: +UGS
2010-01-14 Page 23Copyright © Infineon Technologies 2010. All rights reserved.
HITFET® - typical circuit design
Since the internal driving logic of HITFET’s is supplied via the Input pin, HITFET’sdraw small currents during operation
HITFET’s can be driven in general without any additional, external circuitry sinceeverything is implemented inside the device
Vbb
µCD
S
OutLo
ad
GND
InternalLOGICIN
Optionalserial resistor
for statuspurposes
Low Side (CLASSIC)
µC
Vbb
D
S
Out
Load
GND
IN
High Side (Optional)
Leve
lSh
ifter
InternalLOGIC
2010-01-14 Page 24Copyright © Infineon Technologies 2010. All rights reserved.
Integrated Half Bridge – NovalithIC Concept
P
N
Current Limitation ~70A typ. / 50A min. (low side)
7 mΩtyp.
9 mΩtyp.
Chip
-On-
Chip
Chip
-By-
Chip
Current Sense
No Charge Pump
25 kHz PWM w. Active Freewheeling
2010-01-14 Page 25Copyright © Infineon Technologies 2010. All rights reserved.
On State Resistance
Cos
ts
MonolithicPower Switch
Chip-on-ChipPower Switch
Chip on ChipS-Smart or SPT 4withS-FET
MonolithicS-Smart SPT 4Top Chip
Control IC Base ChipPower-Switch (4-5 Masken)
Chip-on-Chip versus Monolithic Solution
2010-01-14 Page 26Copyright © Infineon Technologies 2010. All rights reserved.
Types of Semiconductor Switches
Source: D. Silber
2010-01-14 Page 27Copyright © Infineon Technologies 2010. All rights reserved.
Power Devices
Source: D. Silber
2010-01-14 Page 28Copyright © Infineon Technologies 2010. All rights reserved.
High energy-saving potentional through improvement of efficiency and minimization of standby losses
AC / DCConversion:30% losses
AC / DCConversion:30% losses
220 V (AC)
DC / DC Conversion:20% losses
DC / DC Conversion:20% losses
Battery Charger:20% losses
Battery Charger:20% losses
Battery Standby:
50% losses
Battery Standby:
50% losses
heatnoiseheatnoise
Standby consumption in the US equals 4 nuclear power
plants
Standby consumption in the US equals 4 nuclear power
plants
2010-01-14 Page 29Copyright © Infineon Technologies 2010. All rights reserved.
Power Supply High Energy Saving Potential(Mass Production)
DC/DC Controller
••
•
AC
85...
265VP
LUG
Saving Consumption Technology
PFC Syn. Rect.
Energy Saving>>1%
>> 90%
>> 1%
CoolSET
CoolMOSSiCSmart control IC
3% Sleep
••
• •• •
• •
•
AC/DC Converter
•
DC 2
Source: EPA, LBNL, NRDC
TechnologyCoolMOS/IGBT
SiCSmart control IC
TechnologyLV-Optimos,
Smart control IC
Energy Saving>>1%
24%Standby Mode
73%Active Mode
Power Convertion
PFC Controller
PWMController
2010-01-14 Page 30Copyright © Infineon Technologies 2010. All rights reserved.2010-2-25
They typically use single transistor forward topology with one power MOSFET & some diodes
AC
90.
..270
V
Passive PFCstage
PWM stageGalvanic insulationPWM-IC900V/1000V MOSFET
Three secondary sidewindings onone transformer
Diodes 12V, 5V, 3.3V
900V/1000V
PWMController
12V
5V
3.3V
Indicates Power Semiconductor content
2010-01-14 Page 31Copyright © Infineon Technologies 2010. All rights reserved.2010-2-25
Let’s take the example of today’s PC power supplies…
Efficiency Analysis
30 %
40 %
50 %
60 %
70 %
80 %
90 %
0 W 50 W 100 W 150 W 200 W 250 W 300 W 350 W 400 W 450 W
POUT [W]
effic
ienc
y η
[%]
Power Supply APower Supply BPower Supply CPower Supply DPower Supply EPower Supply F
Conventional power supplies achieve efficiency of around 70%-80% today
2010-01-14 Page 32Copyright © Infineon Technologies 2010. All rights reserved.2010-2-25
However, with the use of new topologies on primary and secondary side …
AC
90.
..270
V
PWM stageGalvanic insulationhard or resonant sw., 100..200 kHzCoolMOS 500V/600 V,199 mOhm C6PWM IC and Half Bridge Driver
12 V with synchronousrectification
PFC stageensures current to followvoltage sine wave, PF=1hard sw., 64..100 kHzCoolMOS 500V/600 V, 199 mOhmSiC Schottky diode 600VCCM PFC IC
Secondary rectificationsynchronous rectification for12Vhard commutation,100..200 kHzOptiMOS 60..100 V, 5..10 mOhmBuck Stages for 3.3V and 5V
PFCController
12V
DC
5V D
C3.
3V D
C
12V
DC
500V/600V
HBDriver
PWM LLCController
Indicates Power Semiconductor content
2010-01-14 Page 33Copyright © Infineon Technologies 2010. All rights reserved.
Cell – Structure of Power MOSFET
n-
n
np p
sourcegatesource
drain
w
Rndrain
n
Rn-
Rch
Rnsource
gate oxid
+
+- -
n
n-
np
n p
sourcegatesource
drain
CGS CGDox CGS
wspace charge region w sc
CGDsc
CDS
+
-
Electron current flow Capacitances
2010-01-14 Page 34Copyright © Infineon Technologies 2010. All rights reserved.IT 1930 0399/MCD
CoolMOSTM
The Superior Principle for High-Voltage MOSFET
0
30
25
20
15
10
5
0
Ron x A[Ωmm2]
200 400 600 800 1000Breakdown voltage V(BR)DSS [V]
Standard MOSFETRon x A ~ V(BR)DSS 2.4 . . . 2.6
CoolMOSTM
New horizonsfor high-voltage
applications
2010-01-14 Page 35Copyright © Infineon Technologies 2010. All rights reserved.IT 1833 1199/MCD
Sipmos-Driving
Al
n-
p+ p+
n+
n+ n+SiO2
Poly
Drain
GateSource
VB
VS
CGDCDS
Cox
Cox
C
VDS
CGDCDS
CGS
2010-01-14 Page 36Copyright © Infineon Technologies 2010. All rights reserved.IT 1833 1199/MCD
Sipmos-Driving
Al
n-
p+ p+
n+
n+ n+Poly
Drain
GateSource
VB
VS
8V
++ ++++ +++++ +++ SiO2
VDS
ID
1V3.5V
8V
2010-01-14 Page 37Copyright © Infineon Technologies 2010. All rights reserved.IT 1833 1199/MCD
Sipmos-Transistor
RON
1C1 RON 2 C2 RON n C1
n
1 2 3 4 5 6 7 8
...R
1R
1R
1
ON2ON1ON
++= ...C2C1C tot ++=
RON . i2
1/2.Ctot.VB2.f
Ptot=PON+PC
Ptot
Adim
2010-01-14 Page 38Copyright © Infineon Technologies 2010. All rights reserved.
On-State: Intermediate Current
Source: D. Silber
2010-01-14 Page 39Copyright © Infineon Technologies 2010. All rights reserved.2010/2/25
Performance
98 99 00 01 02 03 04 05 Time
CoolMOSTM Generations and milestone
CoolMOSTM C3• Revolution in switching losses.• Fast Diode “CFD” Series• High current capability.• Best-in-class: 160 mOhm in TO220
CoolMOSTM CP(C5)
• 50% parasitic C and Qg.• Best in class : 99 mOhm in TO220,
45 mOhm in TO247
• SJ Revolution in conduction loss• Lowest Rdson on the market: 70mOhm• Best-in-class: 190 mOhm in TO220
06 07 08 09
• Self-limited dv/dt, di/dt easy use.
• Lowest Rdson and parasitic as C3 and CP
• Enchance Diode Commutation
CoolMOSTM C6
CoolMOSTM S5CoolMOSTM S5
2010-01-14 Page 40Copyright © Infineon Technologies 2010. All rights reserved.
Typical end-applications for DC/DC
2010-01-14 Page 41Copyright © Infineon Technologies 2010. All rights reserved.
Technology EvolutionPlanar technologies
2010-01-14 Page 42Copyright © Infineon Technologies 2010. All rights reserved.
Increase Channel Width per Active AreaIncrease Channel Width per Active Area
Trends in Modern Power MOSFET Development I
RJFET
RChannel
Gate
Drain
RChannel
REpi
Source
Planar
RSub
Gate
Drain
Source
Trench
REpi
RCh
RSub
Gate
Drain
Source
Trench
REpi
RCh
RSub
RJFET
2010-01-14 Page 43Copyright © Infineon Technologies 2010. All rights reserved.
Buck ConverterSwitching determined parasitics
package and layout inductances
• switching speed is limited according to dI/dt = Vin/Lstray• switching losses are defined by Lstray
at HS turn-off, Lstray is charged toE = ½ I² Lstray
currentcommutation
2010-01-14 Page 44Copyright © Infineon Technologies 2010. All rights reserved.
S3O8highest power density on 11mm²
32mm² 11mm²
2010-01-14 Page 45Copyright © Infineon Technologies 2010. All rights reserved.
SiC as the ultimate power device base material
2010-01-14 Page 46Copyright © Infineon Technologies 2010. All rights reserved.
0,910
0,915
0,920
0,925
0,930
0,935
0,940
0,945
0,950
0 50 100 150 200 250 300
Switching frequency [kHz]
Effic
ienc
y [%
]
SiC SBD 2nd gen, 8A rated
Competitor, Tandem diode, 8A rated
Competitor, pn diode, 8A rated
SiC diodes are needed for zero reverse recoverycharge at blocking capabilty of 600V and above !
-6
-4
-2
0
2
4
6
0.05 0.1 0.15 0.2 0.25 0.3
Time [µs]
I [A
]
SiC Schottky diode: 6A, 600VSi-pn Tandem diode 8A, 600VStandard Ultrafast 5A, 600V pn-diode
T=125°C, UAK=400VIF=6A, di/dt=200A/μs
2010-01-14 Page 47Copyright © Infineon Technologies 2010. All rights reserved.
The p-islands carrying the bipolar current makethe difference for the 2nd generation!
edge termination
metallizationSchottky contact
Epitaxial n- drift layer
Epitaxial n+ field stop layer
High conductivity 4H SiC substrate
Schottky current
Bipolar boost
Preconditions: • Optimized emitter efficiency• Good ohmic contact to p-wells
Preconditions: • Optimized emitter efficiency• Good ohmic contact to p-wells
2010-01-14 Page 48Copyright © Infineon Technologies 2010. All rights reserved.
Lowside
driver
High Performance AC/AC Stand alone Drive System
UVW
L1L2L3
µCInterface
CCU
CPU
µCCAN
ModuleOTP
ADC10 bit
CANInterface
UserInterface
I/O
Lowside
driver
Highside
driver
Lowside
driver
Highside
driver
Lowside
driver
Highside
driver
C7
E7
G7
G1
C1
E1
G3
C3
E3
G5
C5
E5
G2
C2
E2
G4
C4
E4
G6
C6
E6
Driver stage a.Protection loop:
SC, Driver supply-UV
Sensor loop:Iphase, IFE, VDC,
case-temp.Inrush
strategy
Insulation point(safety insulation)
2010-01-14 Page 49Copyright © Infineon Technologies 2010. All rights reserved.
Product SolutionsDC/AC Converter for Drive (Car)
LoadLoad
E-Motor /GeneratorDC/DC
HVBattery DC/AC
DC/DC
12 V Battery
optional
HVAC
DC/AC
HVAC
DC/AC
HVAC
DC/AC
LoadLoad
Six Pack Power Module with IGBT
Switching Frequency: 5-20kHz
Max. OutputFrequency: 1kHz
Bus Voltage: 120-450V or 500-700V
Battery Voltage: 120-450V
Output Power: 10-120kW
Motor: Permanent Magnet orSquirrel Cage
2010-01-14 Page 50Copyright © Infineon Technologies 2010. All rights reserved.
IGBT and MOSFET of same Die size
=> 15A IGBTversus
7A CoolMOS
Only Power switch in one Package
Figure 3 :Total power losses versus the pulse frequency for the IGBT and FET of the same die size.
IGBT No.1 : Fast IGBT IC100=15AIGBT No.2 : High Speed IGBT IC100=15AFET No.3 : Conv.MOSFET ID100= 7AFET No.4 : CoolMOS CP ID100= 7A
Rectangular current IT=11A, D=0.5, VT=400V, TC=100°C, TJ=150°C.
Up to a pulse frequency of 50 kHz the IGBT is the better choice.
2010-01-14 Page 51Copyright © Infineon Technologies 2010. All rights reserved.
MOSFET and IGBT in on state
IGBT current is provided by electrons and holesbecause of the additional p doped layer
RDSonMOSFET
n-
p n+
SiO2
Al
p
D
G
S
Resistor behavior : RDSon
Cross section of MOSFETcurrent provided by electrons
NPT-IGBT
n-
pn+
SiO2
Al
G
p
C
E
VCEsat
Additional p layer Bipolar behavior:
VCEsat
2010-01-14 Page 52Copyright © Infineon Technologies 2010. All rights reserved.
IGBT-Operating Principle
2010-01-14 Page 53Copyright © Infineon Technologies 2010. All rights reserved.Expert Presentation
2010-01-14 Page 54Copyright © Infineon Technologies 2010. All rights reserved.
Leads to reduction in losses, increased efficiency and increased power density !
GEN 1 GEN 2 GEN 3 GEN 4 GEN 5
Power Densit
y
50%
Loss
Red
uct
ion
1
1.5
2
2.5
3
3.5
4
1988 1992 1996 2000 2004 2008 2012
VCEs
at(1
25°C
) [V]
@ 7
5A
2010-01-14 Page 55Copyright © Infineon Technologies 2010. All rights reserved.
Short Circuit Properties of Trench-/Field-Stop-IGBTs –Design Aspects for a Superior Robustness
Decrease of the chip thickness
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
1988 1990 1992 1994 1996 1998 2000 2002 2004 2006 2008
Chi
p th
ickn
ess
/ µm
600V
1200V
1700V
NPT FS
2010-01-14 Page 56Copyright © Infineon Technologies 2010. All rights reserved.
2010-01-14 Page 57Copyright © Infineon Technologies 2010. All rights reserved.
Typical Module
2010-01-14 Page 58Copyright © Infineon Technologies 2010. All rights reserved.
Temperature of IGBT Modules
Heatsink Temp. – Th
Chip-CaseThermal
Resistance –Rthjc
Heatsink(-Ambient)Thermal
Resistance –Rthha
Chip
SolderCopper Layer
Ceramic (Al2O3 / AlN)CopperSolder
Base Plate
Heatsink
Junction Temp. – Tj
Case Temp. – Tc
Ambient Temp. – Ta
Chip – Case ΔTjc
Case – HeatsinkΔTch
Heatsink –Ambient ΔTha
Input Power Output PowerPower Loss
Tj = ΔTjc + ΔTch + ΔTha + Ta
Case-HeatsinkThermal
Resistance –Rthch
Thermal Grease
/ A.Volke
2010-01-14 Page 59Copyright © Infineon Technologies 2010. All rights reserved.
Fast Switching Power Transistor in Application
Parasitic Components in Circuit-Topology
TransistorDrivingEnergy TransmissionInformation TransmissionIsolation
Earth brit
4
1
1
1T
2
3
3
2
4234
Lσ
Lσ
Lσ
Dr. LorenzPublicis-1011-0046
2010-01-14 Page 60Copyright © Infineon Technologies 2010. All rights reserved.
Packages (low/medium and HighPower IGBT)
Easy750
Easy 1
Easy 2
Econo1B
Econo2B
34mm
Econo3B
Econo3with PressFIT
EconoPACKTM+
EconoDUALTM 3
Discrete IGBT`s
Easy 1B
PrimePACKTM
IHM B
2010-01-14 Page 61Copyright © Infineon Technologies 2010. All rights reserved.
Summary
Main driver for Power Device Development are
- Reduction of Power Loss
- High Ruggeduen
- High Reliability (chip + packaging)
- Easy to Control
- High power density
- Low cost
2010-01-14 Page 62Copyright © Infineon Technologies 2010. All rights reserved.
System RealizationSemiconductor specialistEl. system engineeringMech. system
engineeringPackaging engineeringAssembly engineeringTest engineeringQuality engineeringSystem sim. specialist
Challenge in Power Electronics
Driving FactorsEnergy savingCostMobility/ComfortRegulationEnviromentalfriendly material
Reliability (T>75°C)Extended rel. datasMiniaturizationDynamics (Overload)Imunity (EMI, dv/dt)NoiseCommunicationSelf-learning system
System Requirements
SoftwareSystem simulation toolsTest-architecturesExt. reliability datas
R&D TopicsSystem OptimizedComponents
Passive & semiconductor
New MaterialsSemiconductorThermal-/Isolation Interfacing
Packaging ConceptsChip-contacting technologyEmbedded power assembly
Mechatronics
Multi-chip assemblyDifferent technologiesDifferent temperature ratingsDifferent temperature
profiles
IntegratedPower Elektronic
System