mitsubishi power semiconductor devicesmitsubishi power...
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Mitsubishi Power Semiconductor DevicesMitsubishi Power Semiconductor Devices
Mitsubishi Electric CorporationPower Device Works
27th May, 2008
Major ApplicationsMain Product categories (examples)
DIP-IPM/SIP-IPM(600V, 3~75A, 6 devices, Transfer molding tech.)
HVIPM,HVIGBT(1.7~6.5kV, 0.4~2.4kA)
Air con.Refrigerator
Washing machine
Motor drive for Locomotive Mill machineGCT
(4.5~6.5kV, 0.4~6kA)
IPD Acceleration Sensor HVIC
HEV-IPM (600V/600A) HEV-IPU (600V/300A) EV/HEV for Motor drive
Automobile
White goods
Standard IPM, ASIPM(600V/1200V, 4~800A) Inverter
IGBT module(600V/1200V, 50~1000A)
Industry
LocomotiveHigh power
Other
AC ServoWind Power
SolarSystem
Major Markets Areas and Some Product Families of Mitsubishi Power DevicesMajor Markets Areas and Some Product Families of Mitsubishi Power Devices
0 .01
0 .1
1
10
100
1980 1990 2000 2010 2020
年
パワ
ー密
度
[W/cc]
M-Converter(RB-IGBT)
Power Density Enhancement for Medium Power PE EquipmentPower Density Enhancement for Medium Power PE EquipmentPower Density Enhancement for Medium Power PE Equipment
Pow
er D
ensi
ty (
w/c
c)
Year
Gen-purpose Inverter( Bipolar )
Gen-purpose Inverter( IPM )
Inverter for Appliances( DIP-IPM )
HEV Inverter( EV-IPM )
Gen-purpose Inverter( RC-IGBT & others )
M-ConverterInverterHEV Inverter •• Efforts toward Efforts toward
SiCSiC Application Application •• Integration Integration
TechnologyTechnology•• New Packaging New Packaging
TechnologiesTechnologies
Note:IPM: Intelligent Power ModuleDIP-IPM: Dual In-line Package IPMEV-IPM: IPM for EV and/or HEV applicationsRB-IGBT: Reverse Blocking type IGBTRC-IGBT: Reverse Conducting type IGBTM-Converter: Matrix ConverterHEV Inverter: Inverter systems for hybrid vehicles
Mitsubishi IGBT-G2
Mitsubishi IGBT-G3
Mitsubishi IGBT-G5(CSTBT)
Projected Growth of Power Density in Power Electronics System Designs
Equipment’s Power Density = Pout (W) / Volume (cc)
Key Steps of IGBT Structural Improvements Key Steps of IGBT Structural Improvements
33rdrd Gen. Planar (3um), PTGen. Planar (3um), PT
G (Gate)E (Emitter)
n+ buffer layer(Epi.)
pn+ p+
C (collector)
p+ substrate
n- layer(Epi.)
pn+ p+
250 μ
m
55thth Gen. CSTBTGen. CSTBTTMTM (1um), LPT(1um), LPT
n- layer (FZ)
np
n+p+
n+ buffer layer
p+
170μ
m
C(Collector)
G(Gate)E(Emitter)
N-type CS layer
New structure implementing modified CSTBT cell design, optimized LPT concept and
advanced fabrication process
44thth Gen. Trench (1um), PTGen. Trench (1um), PT
n+ buffer Layer (Epi.)
n- layer (Epi.)
p
p+
250μ
m
C(Collector)
G(Gate)E(Emitter)
p+substrate
n+
• Shrink cell 1/10• Thinner -30%
1200V class IGBT
VCE(sat)
Eoff
CSTBT
PlanarIGBT
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.0 2.5 3.0 3.5 4.0 4.5
cell pitch [μm]
V CE(
sat)
[V] (
150A
/cm
2 ,398
K) 1200V IGBT
Trench IGBT
CSTBTTM
800
850
900
950
1000
1050
2.0 2.5 3.0 3.5 4.0 4.5
cell pitch [μm]
J C(s
at) [
A/c
m2 ] (
398K
) 1200V IGBT
Trench IGBT
CSTBTTM
1.0μm1.5μm
Cell pitch
CS
nB
Emitter electrode
nE
pB
Trenchgate
Isolation layer
Cell pitch
VCE:200V/div, VGE:10V/div, IC:10A/div, time:0.5μs/div
VCE=0VIC=0A
VGE=0V
VGE
1200V50A(600A/cm2)
IC
VCE
VCE=0VIC=0A
VGE=0V
VCE:200V/div, VGE:20V/div, IC:20A/div, time:2μs/div
VGE
VCE
IC800V
60A(750A/cm2)
+16V
-15V
6th Generation IGBT
Technology
6th Generation IGBT
Technology
Turn-off switching
Short-circuit ruggedness
Structural Features
0
2
4
6
8
10
12
14
1985 1990 1995 2000 2005 2010Year
FO
M r
atio
[re
fere
nced t
o 1
stge
n.]
1st gen.
5th gen.4th gen.(with RTC)
3rd gen.
2nd gen.
6th gen.1200V IGBT
Fine pattern process
Trench structure
CSTBT structure Thin wafer process
IGBT’s FOM ImprovementIGBT’s FOM Improvement
Figure Of Merit (FOM) = Figure Of Merit (FOM) = JcJc / {/ {vvce(satce(sat)) ×× eeoffoff}}
where, Jc = device’s rated current density. [A/㎝2 ]
vce(sat) = saturation voltage drop at rated current density conduction with Tj at 400K. [V]
eoff = turn-off switching energy per pulse of operation at rated current density and Tj at 400K. [mj/pulse/A]
The fundamentals of IPM Concept:Local monitoring and safe control of IGBT operation on a real time basis
The fundamentals of IPM ConceptThe fundamentals of IPM Concept::Local monitoring and safe control of IGBT operation on a real tiLocal monitoring and safe control of IGBT operation on a real time basis me basis
Fast detectionSlow shutdown
Over-currentProtection
Drive Logic
Low impedance drive for high-speed turn-off
Error OutputInput
Current sensing by sense-cell implementation
【 Integrated schemes for a fast over-current detection & a speed-controlled turn-off 】
【 Operation by a simple unipolar power source 】
Advantages:
(1) Improvement of IGBT saturation voltage => Achieving lower power loss
(2) Slowed over-current shutdown=> Controlling voltage over-shoot and noise
(3) Monolithic integration of drive and protection circuit => Miniaturization
Advantages:
(1) Simplification of driving circuit => Miniaturization
(2) Fast turn-off at normal switching => Achieving lower power loss
(3) Monolithic integration of drive and protection circuit => Miniaturization
IGBTFWD
Input
Drive Logic
Biasing power sourceBiasing power source
IGBTFWD
C
E
Auxiliary Emitter Current Measurement
On Chip Temperature Detection
Supply Voltage Detection
DRIVERFault Logic
UV
OT
SC Gate Drive adjustment for EMI optimisation
GND
Vcc
In
Fo
5th gen.CSTBT
Functional Features of Existing IPMs(5th Gen. Level)
Functional Features of Existing IPMs(5th Gen. Level)
Progressing HVIC TechnologyProgressing HVIC Technology
1.31.3μμm, 5m, 5φφ, 600V, 600V
HigherHigher PerformancePerformance& Integration& Integration
0.80.8μμm, 5m, 5φφ,, with OTP, 600Vwith OTP, 600V
0.50.5μμm, 8m, 8φφ, 600V, 600V
55μμm, 5m, 5φφ, 600V, 600V&&1200V1200V
1.31.3μμm, 5m, 5φφ, SOI, SOI
State-of-the-Art Future Prospects
MFFP & Double Buried Layer Structure for HVIC structure
MFFP & Double Buried Layer Structure MFFP & Double Buried Layer Structure for HVIC structurefor HVIC structure
・ MFFP (Multiple Floating Field Plate): Surface electric field is relaxed by MFFP.・ Double Buried Layer: Avalanching points are shifted from surface to substrate by an
unique Double Buried Layer Structure to stabilize breakdown voltage.
High Voltage Al WiringMFFP Structure
n+/n-Double Buried Layer
n-p+
p-
n+
n-
n+
n+
Progressing Package TechnologyProgressing Package Technology
Medium PowerIPM/IGBT
•For Industry/Consumer/
High PowerHigh Voltage
•For Traction/Large drives •(AlSiC/AlN)
CategoryCategory
Low PowerIPM/IGBT
•For Industry/Consumer/Automotive fields •1.2KV/25A DIP-IPM•
•Low Rth, Small size
•New VHV structure
•For 1.7kV class •For 6.5kV class
•DIP-CIB•High current•DIP-IPM
•Super-mini DIP-IPM
•New Gen Mold type(Under feasibility study)New molding concept
(synergic)Direct lead-Bonded (DLB) Housing
•Base plate-less(Cu/Al203/AlN)
Case type•(Cu/AlN)
Case type
•Metal base plate)
High current Transfer-molded Housing (TPM)
•High Rel. DIP-IPM
•Heat-sink Integration
• Version 3 DIP-IPM
Common Platform
•New Case type (Nx series)
Automotive fields
IPM/IGBT
Progress based on molding technologyProgress based on molding technology
CompactFlexible and easy-to-useStandardized
CompactHigher P/C & H/C endurance Higher isolation capabilityLower thermal resistance
High High TjTj housinghousing
•Case type
Transfer-molded type
State-of-the-Art Future Prospects
TransferTransfer--mold DIPmold DIP--IPMIPMPackage StructurePackage Structure
Package Outline
Large DIP-IPM
Mini DIP-IPM
Mini DIP-IPM
Large DIP-IPM
Mold resin
IGBT
Thermal-sheet for heat dissipation and electrical insulation (Cu foil + Resin)
HVIC, ASICDiodeAl Wire
Cu FrameAu Wire
Mold resin
IGBT HVIC, ASICDiodeAl Wire
Cu FrameAu Wire
1st Mold resin
Diode, IGBTHVIC, ASICAl wire Cu frame
2nd Mold resinAl heat sink
Au wire
New Mini DIP-IPM Super mini DIP-IPM
Package Outline
Advanced DIP-IPM Structure
M size base M size base
substratesubstratecovercover
Double terminalDouble terminal
bushbush
M size caseM size case
pinpin
terminalterminal
NX package conceptNX package concept
Si power devices : approaching theoretical limit…Can SiC be a choice!? How!?
SiC MOSFET・Wide band gap (3 times of Si)
・Breakdown strength (10 times of Si)
・Thermal conductivity (3 times of Si)
→Higher operating temperature
→Higher blocking voltage with thin layer
MOS gate controlled unipolar switching device・Easy to control by gate voltage variation・Low carrier storing effect, low switching loss ・No latch-up, No secondary breakdown
SiC-MOSFETNext generation ideal power switch
Comparison of physical properties between Si and SiC
< 1311403.34H-SiC~ 3000.315001.1Si
[mΩ[MV/cm]
Dielectric Breakdown
Electron Mobility
BandgapMaterial
cm2][cm2/Vs]
Theoretical limit for unipolar devices, Ron.sp @ 1.2kV
[eV]
New Power Semiconductor MaterialNew Power Semiconductor Material
3.7kW/400V motor drive
3.7kW/400V motor Dynamometer
SiC inverter
Time (msec)
Phas
e cu
rren
t (A
)Overview of the experimental motor drive system
3-phase output current at full-load motor drive operation
Pow
er lo
ss in
inve
rter m
odul
e (a
rb. u
nits
)
Carrier frequency (kHz)
4HSiC-MOSFET inverter operation4HSiC-MOSFET inverter operation
Fabrication Fabrication for R&D work.for R&D work.
W81×D98×H55Fabricated SiC Module
Achieved Power Density: 9W/cm3
High Power Density Inverter Fabrication and Evaluation Using 1200V SiC-MOSFET/SBD
High Power Density Inverter Fabrication and Evaluation Using 1200V SiC-MOSFET/SBD
Fabrication Fabrication for R&D workfor R&D work
Experimental Inverter (3.7kW/400V/3ph)
Improvement of Operating Power Losses Improvement of Operating Power Losses
100100%%
0st Gen. 1st Gen. 2nd Gen. 3rd Gen. 4th Gen. 5th Gen. 6th Gen. 7th Gen.
100%
67%50%
33%27% 22% 17%
10%?
FR-Z200
High hfeBipolar Tr 1st Gen 2nd Gen 3rd Gen 4th Gen
‘80
5th Gen 66thth GenGendevicedevice SiCSiC devicedevice
‘85 ‘90 ’95 ‘00 ‘05 ‘10
FR-A200 FR-A500 FR-A700
Design rule : 5μm 3μm 1μm 1μmCurrent density : 100A/cm2 135A/cm2 180A/cm2 200A/cm2
Saturation voltage : 2.4v 2.2v 1.6v 1.6v
power lossreduction
Transistorturn-off loss
Transistoron-state loss
Transistorturn-on loss
Power loss on inverter operation
Pow
er l
oss
Bipolar Planar IGBT Trench IGBT SiC!?
~~
10 100 1K 10K 10OK 1M
10
100
1K
10K
10OK
1M
10M
100M
Operation Frequency (Hz)
MOSFET
Discrete IGBT
Thyristor
Triac New Application Trend
Bipolar Transistor
Module
Out
put C
apac
ity o
f PE
Syst
em (V
A)
Heavy PE SystemsTraction PE
Automotive PE
Consumer Electronics
GTOGCT
Si
IPMIPMIGBT ModuleIGBT Module
Unipolar solution
Bipolar solutionSiC
☆☆ High speedHigh speed☆☆ Low lossLow loss☆☆ DownsizingDownsizing☆☆ High temp. operationHigh temp. operation
AutomotiveInverter
UPS
Power SupplyCommunication
Power Transmission
Large DriveTraction
SiC potential
Industrial EquipmentPower Supplies
Medical Equipment
Possible Enhancement of Power Device Application Range by Possible Enhancement of Power Device Application Range by SiCSiC
Major Technological TrendsMajor Technological Trends
Eoff
Von
SOA
Higher operating temperature
Lower storage temperature
Balance
Higher power density and integration Lower lossesRobustness / Wider SOA
Higher PC/TC capability
Improved heat dissipation
Packages featuring compatibility
New Material