pmic technology trends in foundry€¦ · gsa seminar - nov. 12, 2014 8 12 v combo motor driver ic...

PMIC Technology Trends in Foundry IL YONG PARK, SRI SARIPALLE - Product Management

Nov. 12, 2014

GLOBALFOUNDRIES Confidential

Contents

• Introduction to Analog/Power

• Basic Power Device Concept

• Trends in PMIC Technology (BCD) in Foundry

GSA Seminar - Nov. 12, 2014 2


Mega Trends That Will Drive the Economy, Technology and Semiconductors


The Cloud will

cause upheaval in IT

Mobile computing will

continue to converge

functions and drive

compute power

Internet of Things will drive

mobile processing at low

power with ubiquitous RF

Coverage and insatiable

bandwidth needs will drive

Next-Gen Wireless

Increasing Security

concerns at all levels:

government, enterprise

and personal

Energy Efficiency is

needed for sustainability

& lower cost of ownership


Analog is Everywhere!


Analog

Semiconductor

ICs

2011 2012 2013 2014 2015 2016 2017 2018

Analog IC Market [$B]

Source: IC Insights

Analog market is growing steadily because analog chips are essential element to bridge

between real-world signals and digital world

Analog and Power don’t shrink as well as logic, so there is less benefit to moving to smaller

process technologies. Analog/Power designs can stay on a given process node for 5-7 years


Fast Growing Market in Power Management

• Automotive

• Smart Phones

• Other Cell Phones

• TVs

• High End Consumer

• Desktop PCs

• Servers

• Notebooks

• Tablet PCs

• Cellular Infrastructure

• Fixed Communications

• Merchant Power Supplies

• Lighting

• Industrial

• Medical

GLOBALFOUNDRIES Confidential 5

2011 2012 2013 2014 2015 2016 2017 2018

PM IC Market [$B]

Source: IMS Research


Fast Growing Market in Power Management

• Automotive

• Smart Phones

• Other Cell Phones

• TVs

• High End Consumer

• Desktop PCs

• Servers

• Notebooks

• Tablet PCs

• Cellular Infrastructure

• Fixed Comms

• Merchant Power Supplies

• Lighting

• Industrial

• Medical

GLOBALFOUNDRIES Confidential 6

2010r 2011 2012 2013 2014 2015 2016

Servers

Smart Phones

Lighting

Tablet PCs

Source: IMS Research

14.9%

8.8%

22.5%

20.3%

CAGR

Basic Power Device Concept



Does PMIC follow Moore’s Law?


12 V Combo Motor Driver IC

1999 2001

2003 2005

If Power IC Follows Moore’s Law

.25m

Power IC doesn’t follow Moore’s Law

Source: Mixed-Signal Analog, C.S. Lee, Texas Instruments presentation material

Dr. Gordon E. Moore co-founded Intel

in 1968.

His observation that number of

transistors doubled every 2 years

became known as “Moore’s Law”


Ideal and Typical Power Switching Waveforms


Ideal Power Switch

Vo

lta

ge

0 tON T

t

On-State Off-State

Cu

rre

nt

t 0 tON T

Po

we

r

0 tON T

t

I x V(=0)=0

I(=0) x V=0

“Zero Power Dissipation”

• Ideal Power Switch has no power dissipation

• Zero leakage currents

• Infinite Breakdown Voltage

• Zero On-Resistance




Ideal Power Switch

Vo

lta

ge

0 tON T

t

On-State Off-State

Cu

rre

nt

t 0 tON T

Po

we

r

0 tON T

t

I x V(=0)=0

I(=0) x V=0


Actual Power Switch

Vo

ltag

e

0 t

Cu

rre

nt

t 0

On-State Off-State

IL

IF

VF

VR

Po

we

r

0 t

“Non-Zero Power Dissipation”


• However, actual Power Switch generates power dissipation due to leakage currents and non-zero Ron, Vf

Actual Power Switch




Ideal Power Switch

Vo

lta

ge

0 tON T

t

On-State Off-State

Cu

rre

nt

t 0 tON T

Po

we

r

0 tON T

t

I x V(=0)=0

I(=0) x V=0


Actual Power Switch

Vo

ltag

e

0 t

Cu

rre

nt

t 0

On-State Off-State

IL

IF

VF

VR

Po

we

r

0 t

“Non-Zero Power Dissipation”


• However, actual Power Switch generates power dissipation due to leakage currents and non-zero Ron, Vf

• Mobile PMIC integrates many power switches so low Ron is very important

• To reduce the form factor of passive devices, the switching frequency of power switch has to be increased Psw > Pdc

High Freq. LDMOS (Low Ron x Qg) is preferred


DEMOS vs. LDMOS, On-Resistance


• On-Resistance [ohm]

Ron = Vds/Ids

@ Vgs=Max Vg, Vds=0.1V

• Specific On-Resistance [ohm-mm2]

Rsp = Ron x Area

= Ron x Total W x Half Pitch • Uniform channel doping

• Vt compatible with CMOS

• Variable W and L

• High breakdown, medium Ron

<DECMOS Structure>

• Double-diffused channel (non-uniform)

• Vt normally 1.0~1.5V (higher than CMOS)

• Fixed L, Variable W

• High breakdown voltage, very low Ron

• Used as a output ‘Power Device’

• Shorted source and body (to suppress NPN parasitic bipolar turn-on)

<LDMOS Structure>

PMIC Technology (BCD) in Foundry



PMIC Technology Offering by Foundry


IDM dominates PMIC Technology

(~1990s)

IDM Transferred PMIC Technology to Foundry

Startups / Fabless develop PMIC

(~2000s)

Foundry develops PMIC Technology

(0.6um~0.09um)

(~2010s)

IVR (Integrated Voltage Regulator)

On-chip passives

3D Integration

Foundry and IDM co-develop specialty technology

Only a few foundry can offer advanced CMOS logic capability

• Mega PMIC for Smartphone by Fabless companies increases

• Foundry shipment also increases

• Moving to 300mm

• GLOBALFOUNDRIES is the first foundry offering 300mm BCDliteTM

Application Processor PMIC

Current Smartphone

2011 2012 2013 2014 2015 2016 2017 2018

Premium Mobile Phone Shipment Forecast

Gartner IDC


High Performance BCD


• As demands increase for more functionality in modern mobile devices, power-management capabilities become more complex

• Therefore more logic density has been required

• Modular concept is required to select the process options for product with minimum cost

180nm 130nm 65nm/ 55nm/ 40nm

GLOBALFOUNDRIES BCDliteTM/BCD Roadmap

GLOBALFOUNDRIES 180nm BCDliteTM Platform

6V CMOS Baseline,

36KÅ TM (1P3M up to 6M)

Iso-body N/PLDMOS 40/50/65V

1.8V ULL and IC

Iso 30V BCDliteTM

BCDliteTM 65V

Option : HRES, MIM, Zener

Iso N/PLDMOS

10/12/16/20/24/ 30/35V

10V LDN/PMOS

Non-Iso 30V BCDliteTM

P-substrate

N-epi / P-substrate

Iso N/PLDMOS

10V

Non-Iso N/PLDMOS

30/35V

Low Ron NLDMOS

10/12/16/20/ 24/30/35V

10V LDN/PMOS

BCD

Iso N/PLDMOS

10/12/16/20/24/ 30/35V

Low Ron NLDMOS

10/12/16/20/ 24/30/35V

Nepi / NBL+Sinker

/ P-sub


High Performance BCD (Low Rsp, High BVdss, Wide SOA)



– Lowest Rsp LDMOS

– Large market capacity (~40V)

– Logic compatibility

– Variety of components

– Large logic contents (0.18um 0.13um)

– Optimized BV, Rsp, and SOA

Example

– BCD6, BCD8.. (STMicro)

– LBC5, LBC7, LBC8.. (TI)

– 180nm BCDlite, 130nm BCDlite , 65/55/40nm BCDlite (GLOBALFOUNDRIES)

LDMOS I-V Curve




• Voltage range from 80V to 300V

• 80V to 120V

- Automotive, telecommunication, hot

swap, PoE (Power over Ethernet), and

audio amplifier

• 120V to 300V

- Offline and display

- Solar power, LED driver

• SOI BCD

- Pro: Good isolation, low parasitics, ease of

high-side operation

- Cons: Expensive substrate

• Bulk BCD

- Pro: Cheap substrate

- Cons: Poor isolation (needs large isolation

area), High parasitics, difficult to build high-

side structure GLOBALFOUNDRIES 130nm BCDliteTM Platform


High-Voltage 700V BCD


Hotel Yas Abudabi

• AC/DC Converter, LED lighting, and Motor driver applications (IGBT driver, etc.)

are fast growing markets

• High-Voltage BCD (700V, 1200V) is required for this applications

• More functionality is being added to be “SMART”

GLOBALFOUNDRIES 180nm UHV Platform


Thick Copper Routing


• IR drop of thin Al metal routing causes high Ron – “de-biasing effect”

• Even thick Al, Ron increase with 30% at large LDMOS

• Thick Cu simply remove de-biasing effect by using low sheet resistance metal

• 10um thick Cu (2mohm/sq) vs. 3um Al (10mohm/sq)

Source: EEtimes, ‘Thick copper paves way for high-current

drive in high-voltage power Ics,’ 4/19/2011

Thick

Cu

Thick

Al

Thin

Al

Thickness

[um] 10 3 0.6

Rs

[ohm/sq.] ~2 10 60


NVM (Non-Volatile Memory) in BCD Technology


SST Super Flash EEPROM

• OTP or e-Fuse

- For trimming - 16bit/ 32bit/ 64bit are commonly used

• EEPROM & MTP

- Single-poly, No additional mask

- Support higher density (~10kbit) with multi-time programmability

• eFlash – Key requirements

- Higher endurance

- Higher densities (~Mbit)

- High Mask count (8~10 mask adder) is a big issue in power management applications

• GLOBALFOUNDRIES

- SST ESF-1 in the 130nm BCDliteTM technology with

4 additional layers

Endurance/Retention: >10K cycles, 10 years @ 850C

4 Mask adder on top of 130nm BCDliteTM (1.5V/5V/HV

process)

Trademark Attribution

GLOBALFOUNDRIES®, the GLOBALFOUNDRIES logo and combinations thereof, and GLOBALFOUNDRIES’ other trademarks and service marks are owned by GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. All other brand names, product names, or trademarks belong to their respective owners and are used herein solely to identify the products and/or services offered by those trademark owners.

© 2013 GLOBALFOUNDRIES Inc. All rights reserved.

Thank you

pmic technology trends in foundry€¦ · gsa seminar - nov. 12, 2014 8 12 v combo motor driver ic...

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