order code vds r max. id ptot sth6n95k5-2 950 v 1.25 g(1) · figure 10: normalized gate threshold...
TRANSCRIPT
March 2015 DocID027383 Rev 3 1/17
This is information on a product in full production. www.st.com
STH6N95K5-2
N-channel 950 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a H²PAK-2 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS RDS(on) max. ID PTOT
STH6N95K5-2 950 V 1.25 Ω 6 A 110 W
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications Switching applications
Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Table 1: Device summary
Order code Marking Package Packaging
STH6N95K5-2 6N95K5 H²PAK-2 Tape and reel
D(TAB)
G(1)
S(2, 3)
AM15557a.v3
Contents STH6N95K5-2
2/17 DocID027383 Rev 3
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package mechanical data ............................................................. 10
4.1 Package mechanical data ............................................................... 11
5 Packing information ...................................................................... 14
6 Revision history ............................................................................ 16
STH6N95K5-2 Electrical ratings
DocID027383 Rev 3 3/17
1 Electrical ratings Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ± 30 V
ID Drain current at TC = 25 °C 6 A
ID Drain current at TC = 100 °C 3.8 A
IDM(1) Drain current (pulsed) 24 A
PTOT Total dissipation at TC = 25 °C 110 W
IAR(2) Max current during repetitive or single pulse avalanche 3 A
EAS(3) Single pulse avalanche energy 90 mJ
dv/dt(4) Peak diode recovery voltage slope 4.5 V/ns
dv/dt(5) MOSFET dv/dt ruggedness 50 V/ns
Tj Operating junction temperature - 55 to 150 °C
Tstg Storage temperature
Notes:
(1)Pulse width limited by safe operating area. (2)Pulse width limited by Tjmax. (3)Starting Tj = 25 °C, ID = IAS, VDD = 50 V. (4)ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS. (5)VDS ≤ 760 V.
Table 3: Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 1.14 °C/W
Rthj-pcb(1) Thermal resistance junction-pcb max 30
Notes:
(1)When mounted on 1 inch² FR-4 board, 2 oz Cu.
Electrical characteristics STH6N95K5-2
4/17 DocID027383 Rev 3
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage VGS = 0 V, ID = 1 mA 950
V
IDSS Zero gate voltage drain
current
VGS = 0 V, VDS = 950 V
1 µA
VGS = 0 V, VDS = 950 V,
Tc = 125 °C 50 µA
IGSS Gate body leakage current VDS = 0 V, VGS = ± 20 V
± 10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V
RDS(on) Static drain-source on-resistance
VCS = 10 V, ID = 3 A
1 1.25 Ω
Table 5: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VGS = 0 V, VDS = 100 V, f = 1 MHz
- 450 -
pF Coss Output capacitance - 30 -
Coss Output capacitance - 1.6 -
Co(tr)(1)
Equivalent
capacitance, time-
related VGS = 0 V, VDS = 0 to 760 V
- 45 -
pF
Co(er)(2)
Equivalent
capacitance, energy-
related
- 19 -
RG Intrinsic gate
resistance f = 1 MHz, ID =0 A - 7 - Ω
Qg Total gate charge VDD = 760 V, ID = 6 A, VGS = 10 V (see Figure 16: "Gate charge test circuit" )
- 13 -
nC Qgs Gate-source charge - 3 -
Qgd Gate-drain charge - 7 -
Notes:
(1)Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS. (2)Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when
VDS increases from 0 to 80% VDSS.
Table 6: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VDD = 475 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
- 12 - ns
tr Rise time - 12 - ns
td(off) Turn-off-delay time - 33 - ns
tf Fall time - 21 - ns
STH6N95K5-2 Electrical characteristics
DocID027383 Rev 3 5/17
Table 7: Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current
-
6 A
ISDM(1) Source-drain current (pulsed)
-
24 A
VSD(2) Forward on voltage ISD = 6 A, VGS = 0 -
1.6 V
trr Reverse recovery time ISD = 6 A,
di/dt = 100 A/µs
VDD = 60 V
- 372
ns
Qrr Reverse recovery charge - 4
µC
IRRM Reverse recovery current - 22
A
trr Reverse recovery time ISD = 6 A,
di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
- 522
ns
Qrr Reverse recovery charge - 5
µC
IRRM Reverse recovery current - 20
A
Notes:
(1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8: Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 30 - - V
The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
Electrical characteristics STH6N95K5-2
6/17 DocID027383 Rev 3
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
VDS
(V)
ID
(A)
1001010.10.01
0.1
1
10
100µs
1ms
10msO
pera
tion
in th
is a
rea
is lim
ited
by m
ax R
DS(o
n)
Tj=150°C
TC=25°C
Single pulse
GIPG220120151710ALS CG20930
tp
Zth = k R
thj-C
δ = tp/ Ƭ
10-2
10-1
K
Ƭ
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.01
δ = 0.02δ = 0.05
SINGLE PULSE
Zth = k R
thj-C
δ = tp/ Ƭ
tpƬ
tp(s)10-110-210-310-410-5
6
4
2
0
8
10
5V
6V
7V
VGS=10V
12
ID
(A)
0 5 10 15 20 25 VDS
(V)
AM07108v1 ID
6
4
2
0
(A)
8
VDS
=15V
VGS
(V)86420
AM07109v1
VGS
6
4
2
0
(V)
8
10
12
300
200
100
0
400
500
VDS
(V)
600
700
Qg(nC)
VDD
=760V
ID=6A
VDS
14121086420
AM07110v1 RDS(on)
0.93
0.91
0.89
0.87
(Ohm)
0.95
0.97
0.99
1.01
1.03
ID(A)
VGS
=10V
3.02.52.01.51.00.5
AM07111v1
STH6N95K5-2 Electrical characteristics
DocID027383 Rev 3 7/17
Figure 8: Capacitance variations
Figure 9: Output capacitance stored energy
Figure 10: Normalized gate threshold voltage vs temperature
Figure 11: Normalized on-resistance vs temperature
Figure 12: Source-drain diode forward characteristics
Figure 13: Normalized V(BR)DSS vs temperature
C
1000
100
10
1
(pF)
Ciss
Coss
Crss
VDS
(V)1001010.1
AM07112v1
4
0
8
12
16
20
VDS
(V)
Eoss
(µJ)
8006004002000
AM07113v1
VGS(th)
0.7
0.6
0.5
0.4
(norm)
0.8
0.9
1.0
1.1
1.2
TJ(°C)
ID=100 µA
1257525-25-75
AM07114v1 RDS(on)
2.0
1.5
1.0
0.5
(norm)
2.5
0T
j(°C)1257525-25-75
VGS
=10V
AM07115v1
0.55
0.65
0.75
0.85
0.95
ISD
(A)6.05.04.03.02.0
VSD
(V)
0.7
0.8
0.9
1.0
1.1
1.2
Tj(°C)
ID=1 mA
V(BR)DSS
(norm)
1257525-25-75
AM07116v1
Electrical characteristics STH6N95K5-2
8/17 DocID027383 Rev 3
0
20
40
60
80
100
ID=3 A
VDD
=50 V
Tj(°C)
EAS
(mJ)
140120100806040200
AM07117v1
Figure 14: Maximum avalanche energy vs starting Tj
STH6N95K5-2 Test circuits
DocID027383 Rev 3 9/17
3 Test circuits Figure 15: Switching times test circuit for resistive
load
Figure 16: Gate charge test circuit
Figure 17: Test circuit for inductive load switching and diode recovery times
Figure 18: Unclamped inductive load test circuit
Figure 19: Unclamped inductive waveform
Figure 20: Switching time waveform
AM01469v1
VDD
47 kΩ1 kΩ
47 k Ω
2.7 k Ω
1 kΩ
12 V
Vi ≤ VGS
2200 μ F
PW
I G = CONST100 Ω
100 nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
SB
G
25
A A
BB
RG
G
FAST
DIODE
D
S
L=100 µH
µF
3.3 1000µF
VDDΩ
D.U.T.
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01472v1 AM01473v10
VGS
90%
VDS
ton
90%
10%
90%
10%
td(on)
tr
t
td(off)
tf
10%
0
off
Package mechanical data STH6N95K5-2
10/17 DocID027383 Rev 3
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
STH6N95K5-2 Package mechanical data
DocID027383 Rev 3 11/17
4.1 Package mechanical data
Figure 21: H²PAK-2 outline
8159712_D
Package mechanical data STH6N95K5-2
12/17 DocID027383 Rev 3
Table 9: H²PAK-2 mechanical data
Dim. mm
Min. Typ. Max.
A 4.30
-
4.80
A1 0.03 0.20
C 1.17 1.37
e 4.98 5.18
E 0.50 0.90
F 0.78 0.85
H 10.00 10.40
H1 7.40 7.80
L 15.30 15.80
L1 1.27 1.40
L2 4.93 5.23
L3 6.85 7.25
L4 1.5 1.7
M 2.6 2.9
R 0.20 0.60
V 0° 8°
STH6N95K5-2 Package mechanical data
DocID027383 Rev 3 13/17
Figure 22: H²PAK-2 recommended footprint
8159712_D
Packing information STH6N95K5-2
14/17 DocID027383 Rev 3
5 Packing information Figure 23: Tape outline
STH6N95K5-2 Packing information
DocID027383 Rev 3 15/17
Figure 24: Reel outline
Table 10: Tape and reel mechanical data
Tape Reel
Dim. mm
Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A
330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T
30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
A
D
B
Full radius
Tape slot
In core for
Tape start
G measured
At hub
C
N
REE L DIMENS IONS
40 mm min.
Access hole
At slot location
T
Revision history STH6N95K5-2
16/17 DocID027383 Rev 3
6 Revision history Table 11: Document revision history
Date Revision Changes
23-Jan-2015 1 First release.
04-Feb-2015 2 Updated Section 2: "Electrical characteristics"
12-Mar-2015 3 Document status changed from preliminary to producion data.
STH6N95K5-2
DocID027383 Rev 3 17/17
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