nonlinear performance comparison for fd and pd soi mosfets based on the integral function method and...
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![Page 1: Nonlinear performance comparison for FD and PD SOI MOSFETs based on the Integral Function Method and Volterra modeling Bertrand Parvais (EMIC, UCL, Belgium)](https://reader033.vdocuments.site/reader033/viewer/2022061618/56649d635503460f94a458c1/html5/thumbnails/1.jpg)
Nonlinear performance comparison for FD and PD SOI MOSFETs based on the
Integral Function Method and Volterra modeling
Bertrand Parvais (EMIC, UCL, Belgium) [email protected] Cerdeira (CINVESTAV-IPN, Mexico)Dominique Schreurs (TELEMIC, KULeuven, Belgium)Jean-Pierre Raskin (EMIC, UCL, Belgium)
September 20, 2004UCL
MOS-AK Workshop
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UCL
Distortion
f f
Silicon-on-Insulator (SOI)
1. Non-idealities of “linear circuits”• Amplifiers• Active filters
2. Used in some applications• Mixers• Oscillators• Frequency multipliers
3. Inherent to the physics of semiconductors
MOSFET SOI
• Simplified process
• Low parasitic capacitances
• Low leakage current
• Low Vth
=> promising for RF ICs
Why study SOI MOSFETs nonlinearities ?
![Page 3: Nonlinear performance comparison for FD and PD SOI MOSFETs based on the Integral Function Method and Volterra modeling Bertrand Parvais (EMIC, UCL, Belgium)](https://reader033.vdocuments.site/reader033/viewer/2022061618/56649d635503460f94a458c1/html5/thumbnails/3.jpg)
UCLFD vs PD SOI MOSFETs
- : Fully Depleted (FD)
G
S/D S/D
Burried Ox
G
Burried Ox
S/D S/D
body
--: Partially Depleted (PD)with floating body
DuTs: FD and PD SOI MOSFETs, 12x6.6 µm/0.25 µm (0.25 µm LETI technology)
VD [V]
I D [
mA
]
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UCLWhat happens inside?
- gd kink -
n ++ p n ++
Body regionSiO2
=> body potential increase up to Vtsb
=> Parallel path for Id and Id increase=> Vt lowering and Id increase
Depletion region
High E field near the drain:
Impact Ionization current
++
=> impact ionization => creates e--h+pairs
++++ +
=> injection of holes inside the body
![Page 5: Nonlinear performance comparison for FD and PD SOI MOSFETs based on the Integral Function Method and Volterra modeling Bertrand Parvais (EMIC, UCL, Belgium)](https://reader033.vdocuments.site/reader033/viewer/2022061618/56649d635503460f94a458c1/html5/thumbnails/5.jpg)
UCL
1. DC based characterization methods• Taylor series• Integral Function Method (IFM)• Comparison with Large-Signal Network Analyzer (LSNA)
measurements
2. HF MOSFET model based on Volterra series• Frequency limitation of DC based methods• Third order intermodulation
3. Conclusions• Devices performances
Outline
Linearity of SOI MOSFETs using Integral Function Method and Volterra
modeling
=> Does the kink influence the linearity ?
=> Which methods to characterize the linearity of MOSFETs ??
The simplest is the best
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UCL
Consider the memoryless nonlinear system:
0
)())((n
nGnGD tVKtVI
VG
ID
VG(t) ID(t)
Method : Taylor analysis
nG
Dn
ndV
Id
nK
!
1 Taylor series:t
f
)33cos(4
)22cos(2
)cos(4
3
2))cos((
3322
231
220
tAK
tAK
tAK
KAAK
KtAy
t
f
If the circuit is excited by a sine wave,
1
2
231
22
2
34
2
K
KA
AKK
AKHD
![Page 7: Nonlinear performance comparison for FD and PD SOI MOSFETs based on the Integral Function Method and Volterra modeling Bertrand Parvais (EMIC, UCL, Belgium)](https://reader033.vdocuments.site/reader033/viewer/2022061618/56649d635503460f94a458c1/html5/thumbnails/7.jpg)
UCLMethods: quid for large amplitude?
VG
ID
t
Taylor: add terms => too complicated !
IFM: good approximation of HD at LFfurther advantage: less sensitive too measurement noise[CerdeiraSSE02, CerdeiraSSE04, CerdeiraICSICT04]
![Page 8: Nonlinear performance comparison for FD and PD SOI MOSFETs based on the Integral Function Method and Volterra modeling Bertrand Parvais (EMIC, UCL, Belgium)](https://reader033.vdocuments.site/reader033/viewer/2022061618/56649d635503460f94a458c1/html5/thumbnails/8.jpg)
UCL
In
Out1. Normalize the characteristics
IFM: How does it work ?
HD3 is obtained by computing the D function of Ir = I(V)-I(-V)
=> even harmonics eliminated
! HD of order higher than 3 are neglected
2. Observe that Area1-Area2 is
proportionnal to the THD
3. Define the D function
1
0
1
0
1
0
1)(2)()(
21
dvvidiivdvvi
AreaAreaD
Area2
Area1
[CerdeiraSSE02, CerdeiraICSICT04]
![Page 9: Nonlinear performance comparison for FD and PD SOI MOSFETs based on the Integral Function Method and Volterra modeling Bertrand Parvais (EMIC, UCL, Belgium)](https://reader033.vdocuments.site/reader033/viewer/2022061618/56649d635503460f94a458c1/html5/thumbnails/9.jpg)
UCL
Not by a scale factor as from Taylor approach, cfr.
VG [V]
HD
3 [d
B]
Ld
dvDC
m
m
Yg
gA
g
gAHD
1
32
1
32
3 4
IFM takes the influence of the amplitude
of the applied signal into account
![Page 10: Nonlinear performance comparison for FD and PD SOI MOSFETs based on the Integral Function Method and Volterra modeling Bertrand Parvais (EMIC, UCL, Belgium)](https://reader033.vdocuments.site/reader033/viewer/2022061618/56649d635503460f94a458c1/html5/thumbnails/10.jpg)
UCL
LSNA = full-wave (magnitude and phase) RF (900 MHz) characterization
(V,I fundamental and harmonics at input and output) in single take
=> Real RF nonlinear behavior
[VerspechtMTTS95]
• Good agreement before the minimum
• Minimum located at :
- IFM : max. of gm - LSNA : max. of power gain
• Nonlinearity of gm and gd
900 MHz, 50 Ω, A = 0.2 V
HD
2 [d
B]
VG [V]
LSNA
Comparison with LSNA measurements
gm only
gm and gd
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UCL
=> Which frequency limit ??
=> Answer this question with the help of a Volterra series based model:
RGCgd
Cgs
Gm Gd Cds
YLVin
Gm=gm1+gm2VG+gm3VG²
Gd=gd1+gd2VD+gd3VD²
Harmonic distortion af HF
DC method vs 900 MHz measurements in agreements
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UCL
2
22
12
222
/1
/1
),(
),(
2
pHD
zHDDC ff
ffHD
ssH
ssHAHD
HD2
freqfp fz
HD from Nonlinear current method
[ParvaisGAAS04]
)/1)(/1(
)/1)(/1(
3231
323133
HDpHDp
HDzHDzDC ffff
ffffHDHD
,3
)(|)(| 2
AvpoleHDpole
7
)(|)(| 3
AvpoleHDpole
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UCL
Pole Voltage Gain Av26 GHz
9 GHz5 GHz
Pole HD2
Pole HD3
Poles of HD2 and HD3 as a function of ZL
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UCL
• Good agreements between results calculated using IFM and using Fourier coefficients.
• IFM: advantages = amplitude dependent, no derivatives.
• Frequency validity range cfr. Volterra model (several GHz).
Characterization methods
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UCLHD: PD ~ FD transistors
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UCLFrequency analysis of the kink effect
• frequency limitation caused by RC body impedance
iii
Vb
RbCb
g
ii
ii
b
b
th
th
ddid V
I
I
V
V
V
V
Igg
...
[SinitskyIEDL97]
bb
b
g
b
CRj
RZ
I
V
1Rb and Cb= body resistance and capacitance
• As Vd Rb => fc
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UCLThird order intermodulation
)(
2
)2(
1
)()(3
2
)()(
2
)()2(
1
3
2
)(2
)(
)(1
1
4
3
**
22
2
1
**22
*31
1
33
322
3
ooo
d
o
m
oooomd
o
d
o
m
m
m
gsg
GGG
g
G
g
GGGGgg
G
g
G
g
g
gIM
IMCR
AIMD
Volterra model:
Kink effect !
ZL↑
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UCL
0.20 0.40 0.60 0.80 1.000.00 1.20
-25
-20
-15
-10
-30
-5
Vgs0
THD
_Iso
cTH
D_T
ied
THD
_Flo
atPD SOI: Floating body or not ?
PD, from ST Microelectronics
60x 1µm/0.12 µm, f=2 GHz
FB: higher fT, fmax than BC and isoc.
BC/Isoc.: parasitic C, gm degradation
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UCL
• At 900 MHz, when the polarization voltage is varied, HD is dominated by the DC I-V characteristics.
• Frequency validity range of DC methods provided by a Volterra model.
• PD versus FD:
HD ---> idem (gm dominates)IMD ---> depends on the tone separation cfr. Kink effect
Thanks to FRIA for financial support
Conclusions