nil template : progress and...
TRANSCRIPT
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© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.
NIL Template : progress and challenges
Naoya Hayashi
Electronic Device OperationsDai Nippon Printing Co., Ltd.
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 11© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.1
Contents
1. IntroductionLithography technology trendParadigm shift in NGLsNIL applications
2. NIL template technology progressResolution, CD, IP, and defectivity controlInspection infrastructure
3. Next challenges for 1x nm era4. Summary
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 22© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.2
ITRS Lithography Solutions ~ DRAM/MPU2012 Update
Figure LITH3A DRAM and MPU Potential Solutions
First Year of IC Production 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026
DRAM ½ pitch (nm) (contacted) 36 32 28 25 23 20.0 17.9 15.9 14.2 12.6 11.3 10.0 8.9 8.0 7.1 6.3
MPU/ASIC Metal 1 1/2 pitch (nm) 38 32 27 24 21 18.9 16.9 15.0 13.4 11.9 10.6 9.5 8.4 7.5 7.5 7.5
45 193nm Imm
32 193 nm DP
22 EUV193nm MPML2 (MPU)
16 EUV193nm MPML2DSA + LithoImprint
11 EUV higher NA / EUV + DPML2DSA + LithoEUV (new wavelength)ImprintInnovation
Narrow Options
Narrow Options
Narrow Options
MPU / DRAM time line
193nm+MP and EUV will lead scaling down to 16nmHP. Emerging technologies will be the candidate beyond then.
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 33© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.3
ITRS Lithography Solutions ~ Flash2012 Update
Figure LITH3B Flash Potential Solutions
First Year of IC Production 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026
Flash ½ Pitch (nm) (un-contacted Poly)(f) 22 20 18 17 15 14 13 12 11 10.0 8.9 8.0 8.0 8.0 8.0 8.0
32 193 nm DP
22 193 nm DP
16 193nm MPEUVImprint
11 EUV higher NA / EUV + DP193nm MPDSA + LithoEUV (new wavelength)ImprintInnovation
Narrow Options
Narrow Options
NAND Flash Time Line
193nm+MP and EUV will lead scaling down to 16nmHP. Emerging technologies will be the candidate beyond then.
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 44© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.4
Paradigm shift in NGLsComplexity & Difficulty Color Map
Optical extension with MP is complex and costly
Design
EDA
Mask
Exposure tool(Scanner)
Process
Back -end
Optical Extension
(Immersion+MP)Litho-Friendly Design
Data Split + Complex OPC + Cutting
Overlay AccuracyCDU Accuracy
Alignment AccuracyThroughput
Complex Process FlowProcess tool capacity
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 55© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.5
Footprint comparison between Optical extension and EUV
Etch :33
CVD :21
Etch :10
CVD :10
Scanner/Track: 6 Scanner/Track
: 4
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 66© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.6
EUVL needs complex mask, scanner, and dedicated infrastructures.
Design
EDA
Mask
Exposure tool(Scanner)
Process
Back -end
Optical Extention
(Immersion) EUVL
Design
EDA
Mask
Exposure tool(EUV Scanner)
Process
Back -end
Flare Correction
Complex StructureActinic Tools
Complex Vacuum ToolThroughput
EUV Resist
Paradigm shift in NGLsComplexity & Difficulty Color Map
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 77© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.7
Mask Blank Structures Comparison
AR-TaN
CrN / -
Si / Ru
Mo-Si(40 pairs)
LTEM
Material/Layer
CrN
absorber layer
buffer layer
capping layer
reflective layer
substrate
back side film
>85 layers>85 layers8 materials8 materials
EUV mask substrate complexity
absorber layer/ phase-shift layer
~3 layers~3 layers3 materials3 materials
AR-Cr,MoSi
/ MoSiX
Qz substrate
EUV mask needs very different defect control and
metrology/inspection tools.
EUV ArF
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 88© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.8
NIL is simple, but needs 1x nm feature and defect control
Design
EDA
Mask
Exposure tool(Scanner)
Process
Back -end
Optical Extention
(Immersion) NIL
Design
EDA
Template
Exposure tool(Imprinter)
Process
Back -end
EUVL
Design
EDA
Mask
Exposure tool(EUV Scanner)
Process
Back -end
1x FeaturesDefect Control
Overlay AccuracyThroughput
Defect Control
Paradigm shift in NGLsComplexity & Difficulty Color Map
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 99© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.9
Comparison between optical and imprint lithography
Far Field Methods(e.g. KrF, ArF, EUV)Spatial resolution is
limited by diffraction.
Optical lithographyNear Field (Contact) Methods
Spatial resolution is notlimited by diffraction.
Nano-imprint lithography (NIL)
NIL template
X4 X1
Optical mask
design
NIL adopts 1X masks
OPC pattern is unnecessary.
Further resolution capability
in patterning process is needed.
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1010© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.10
ML2 needs high throughput, high accuracy EB tool
Design
EDA
Mask
Exposure tool(Scanner)
Process
Back -end
Optical Extention
(Immersion) NIL
Design
EDA
Template
Exposure tool(Imprinter)
Process
Back -end
EUVL
Design
EDA
Mask
Exposure tool(EUV Scanner)
Process
Back -end
ML2
Design
EDA
No Mask
Exposure tool(EB Writer)
Process
Back -end
PECCompatibility
ThroughputOverlay
EB Resist
Paradigm shift in NGLsComplexity & Difficulty Color Map
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1111© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.11
DSA may relax the lithography requirements with critical process
Design
EDA
Mask
Exposure tool(Scanner)
Process
Back -end
Optical Extention
(Immersion) NIL
Design
EDA
Template
Exposure tool(Imprinter)
Process
Back -end
EUVL
Design
EDA
Mask
Exposure tool(EUV Scanner)
Process
Back -end
ML2
Design
EDA
No Mask
Exposure tool(EB Writer)
Process
Back -end
DSA
Back -end
Design
EDA
Mask
Exposure tool(Scanner)
Process
DSA-Friendly Design
Data Split + Cutting
CDU AccuracyLER/LWR
Alignment Accuracy
Complex Process Control
Paradigm shift in NGLsComplexity & Difficulty Color Map
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1212© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.12
Contents
1. IntroductionLithography technology trendParadigm shift in NGLsNIL applications
2. NIL template technology progressResolution, CD, IP, and defectivity controlInspection infrastructure
3. Next challenges for 1x nm era4. Summary
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1313© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.13
DNP’s original font “Shu-ei-tai” NIL template with Qz
“Typography” with metal font
Printing meets Nanotechnology
hp22nm
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1414© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.14
Imprint Application in DNP
Hologram moldsApplications
min pixel 125nm
8Level
Mold pattern
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1515© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.15
J-FIL fluid dispenser
Planarization layerSubstrateStep 1: Dispense drops
Step 2: Lower template and fill pattern
Step 3: Polymerize J-FIL fluid with UV exposure
Step 4: Separate template from substrate
Template
Template
Substrate
Substrate
Substrate
Template Step & Repeat or
Whole Wafer PrintingPlanarization layer
Planarization layer
Planarization layer
Quartz template, coated with release layer
Field-to-field dispense & imprintingLow pressure (< 0.5 psi) processRoom temperature operationNo contact to wafer
Nanoimprint Process in CMOS:J-FIL @MII
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1616© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.16
Recent NIL applications
Current solution for the industry 450mm initiative
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1717© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.17
NIL Applications other than CMOS
17
Semiconductor
Flat Panel Displays
Hard Disk Drives
Biotech –DNA Sequencing
Biotech –Nano‐Pharmaceutical
Energy – Lighting
Energy – Solar
Energy – Batteries
Wire Grid Polarizer
Nanoparticle Delivery
MARKET APPLICATION MARKET APPLICATION
Memory Array
Bit Patterned Media
Flowcell Nano-Wells
Photonic Crystals
3D amorphous Si
Si Nano-anodes
Lowest Cost nanopatterning— Lower capex than optical— Near zero material waste
› Drop on demand resist jetting
— Compact footprint
Extensible Technology— Proven <15nm applications— Flexible and scalable technology— Large substrate sizes possible
450mm siliconflexible filmsflat panel glass
Key J-FIL Benefits
Wednesday February 27
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1818© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.18
Contents
1. IntroductionLithography technology trendParadigm shift in NGLsNIL applications
2. NIL template technology progressResolution, CD, IP, and defectivity controlInspection infrastructure
3. Next challenges for 1x nm era4. Summary
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 1919© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.19
Resolution in NIL Template~Small Field
Resolution with Mask Writer (50kV EB)
Resist images
hp14nmhp16nm hp15nm hp13nm
Resolution with 100kV EB Writer
h p 2 2 n m h p 2 0 n mh p 2 4 n mh p 2 6 n m
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2020© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.20
Resolution in NIL Template~Full Field
30nmHP 28nmHP 26nmHP
Full Field = 26 x 33 mm @Template
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2121© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.21
Cross Section Measurement by AFM
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2222© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.22
Critical Dimension Control
Avg. :24.57Range: 2.583σ : 1.39
Avg. :24.38Range: 1.543σ : 1.01
Total Vertical pattern
units [nm]
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2323© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.23
Master #1 Master #2 Mater #3
Master #1 Master #2 Master #3X Y X Y X Y
3σ[nm] 2.76 2.60 2.83 3.00 2.47 2.23 Min[nm] -3.21 -2.07 -2.47 -1.95 -1.78 -1.79 Max[nm] 2.54 2.42 1.87 1.62 2.07 2.23
Image Placement
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2424© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.24
Most of critical defects, open, short (red dot line)& CD, edge (blue dot line), were detected on 24nm L&S features.
Defect inspection capability with EBI
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2525© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.25
Master defect reduction
1
10
100
1000
10000
100000
1000000
Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
2010 2011
Defe
ct density
/cm
2
After repair
Achieved <10w/o repair
Defect
*EB inspectionUp to 20nm
Achieved zero defect by adopting repair technology
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2626© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.26
Master template defect repair
E-beam based repair technology is applied
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2727© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.27
Defect on master template After repair
Line short defect
Defect printability after repair
Imprinted image onreplica template
Repaired pattern is successfully transferred on replica
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2828© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.28
PERFECTATM MR5000
Template Replication Tool
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 2929© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.29
Cross sectional view of replica template after Qz etching and Cr removal.
Replication Process
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 3030© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.30
Image Placement
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 3131© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.31
EB inspectionUp to 20nm*
Replica Defect Reduction
1
10
100
1000
10000
100000
1000000
8 9 10 11 12 Q1 Q2 Q3 Q4
2011 2012
Achieved <5
Defect on replica template has been improved down to 5/cm2.
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 3232© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.32
Attribute Target StatusMaster
CDU 2 nm 1.0nmImage Placement 3 nm 3 nm
Defect Density 0.1/cm2 0/cm2 w/repair
ReplicaCDU 2 nm 1.9nm
Image Placement 4 nm 5 nmDefect Density 1/cm2 <5/cm2
NIL Template Readiness
Image placement and defectivity still need to beimproved and stabilized.
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 3333© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.33
Imprint Electrical Yield: Excellent Progress
1 10 100 1000 10000
100%
80%
60%
40%
20%
0%
Line Length (mm)
Yiel
d
2010
2009
2011
26nm HP
J-FIL
Electrical Defect Testing: Yield vs. Line Length
• Excellent progress in electrical yield- >90% at 10 meters
2012
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SPIE Advanced Lithography 2013SPIE Advanced Lithography 2013 3434© 2011 Dai Nippon Printing Co.,Ltd. All Rights Reserved.34
NIL Readiness
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Contents
1. IntroductionLithography technology trendParadigm shift in NGLsNIL applications
2. NIL template technology progressResolution, CD, IP, and defectivity controlInspection infrastructure
3. Next challenges for 1x nm era4. Summary
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Top down SEM
SEM images
100nm70nm50nm24nmhp 18nm16nm 20nm15nm
Top down SEM
SEM images
100nm70nm50nm24nmhp 18nm16nm 20nm15nm
CDerror(nm)
-5-4-3-2-1012345
0 20 40 60 80 100 120
hp(nm)
CD
err
or(
nm
)
CDerror(nm)
- 15nm etched Qz resolution is confirmed with Gaussian E-beam tool- Confirmed linearity within +/-1nm @ 15-100nm- Patterning throughput & LER will be issues
-15nmHP Etched Qz pattern was performed by “double patterning” method- Further tool / process optimization needed
Challenge for 1x nm ~ Etched Qz resolution
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Replicated pattern features
Replicated resist imageTEM image of
Master template
15nm L&S is successfully transferred on replica template.
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SummaryNIL is one of the NGL candidates to scale the device feature down to 1x nm and beyond.Compared with other lithography options, such as optical lithography extension and EUV lithography, NIL will be much less complex and cost effective. NIL will be adopted on the products which has certain level of defect redundancy, such as the storage devices and non-CMOS products.NIL template technologies have been developed to achieve the target specifications, such as CD and IP, but still has the tough challenge in defectivity control mostly in replication.1x nm pattern fabrication on template is developed with multiple paths, and will transfer to production stage.
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Thank you!