mos transistors
TRANSCRIPT
ESE216/JVdSpiegel 1
Transistors and Microelectronics
ESE216
(IBM)Pentium, Intel
EE
Tim
es, B
erke
ley
Des
ign
Tech
.(D
. Rom
mel
)
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Electronics evolution: micro to nano
1946 -ENIAC
1947 - Transistor
2000 -ICMauchly and Eckert
Bardeen, Brattain and Shockley
IBM
(Wikipedia)MOSFET
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Chip complexity
Compare to a street map
(Intel Quad Core291M transistors)
Complexity of the USA
Submicron and nanoscale dimensions
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Moore’s Law
(Source: Semic. Int., April 2004)
Moore’s Law: chip complexity doubles every two years (expected to go on for another 20yrs)
Year of introduction
1K
1M
1G
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Nanometer feature sizes
(IBM)
SEM picture metallization
(Source: AMD)
Nine levels of metallization(with low-k dielectric and SiC-based barriers)
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Evolution of Transistor’s Feature Size
(Source: ITRS)
TSi=7nmLgate=6nm
Source Drain
Gate
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Two types of transistors
Bipolar junction transistor (BJT): npn and pnpMetal Oxide Semiconductor Field Effect Transistor or MOSFET: nmos, pmos and cmos
ComparisonBJT MOSFETLarger Smaller Needs more power Low power consumptionComplex to fabricate Easier to fabricate (to a
certain extent)Faster SlowerLower noise Higher noise
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Wafer level fabrication: billions of transistors
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MOSFET: current flow
ELECTRON
HOLE DRAIN
SOURCE
CMOS ON
CMOS OFF
N-CHANNELGATE
P-Si
(Source: Scientific American, Solid-state Century, Jan. 98)
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MOSFET: Hydraulic Equivalent
G
S DB
drain
ball cock
sluizegate
source
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MOSFET as an Amplifier
Mike
Idinput output