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Low Energy Ion Beam andPlasma Modification of Materials

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Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 223

Low Energy Ion Beam andPlasma Modification of Materials

Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.

EDITORS:

James M.E. HarperIBM T. J. Watson Research Center, Yorktown Heights, New York, U.S.A.

Kiyoshi MiyakeHitachi Research Laboratory, Hitachi Ltd., Ibaraki, Japan

John R. McNeilUniversity of New Mexico, Albuquerque, New Mexico, U.S.A.

Steven M. GorbatkinOak Ridge National Laboratory, Oak Ridge, Tennessee, U.S.A.

IMIRIS1 MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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Contents

PREFACE xi

ACKNOWLEDGMENTS xi i i

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xiv

PART I: FUNDAMENTALS OF ION-MATERIAL INTERACTIONS

DYNAMIC MONTE CARLO SIMULATION OF ION BEAM AND PLASMATECHNIQUES 3

W. Moller

•SIMULATIONS OF LOW-ENERGY ION/SURFACE INTERACTION EFFECTSDURING EPITAXIAL FILM GROWTH 9

Makoto Kitabatake and J.E. Greene

LOW ENERGY Ar ION BOMBARDMENT OF (001) Si: DEFECTS ANDSURFACE MORPHOLOGY 21

M.V.R. Murty and Harry A. Atwater

MOLECULAR DYNAMICS SIMULATIONS OF THIN FiLM DIAMONDGROWTH 29

Bernard A. Pailthorpe and Peter Knight

MOLECULAR DYNAMICS SIMULATIONS OF ION BEAM MIXING 35A.M. Mazzone

UNIVERSAL ENERGY DEPENDENCE OF SPUTTERING YIELDS AT LOWION ENERGY 41

J. Muri and Ch. Steinbriichel

EXPERIMENTAL AND THEORETICAL INVESTIGATIONS ON THEINTERRELATION OF CHARGE EXCHANGE PROCESSES AND ENERGYLOSS OF PARTICLES AT METAL SURFACES 47

A. Narmann, W. Heiland, R. Monreal, F. Flores, andP.M. Echenique

ISLAND EVOLUTION DURING EARLY STAGES OF ION-ASSISTEDA GROWTH: Ge ON SiO2Shouleh Nikzad and Harry A. Atwater

FILM GROWTH: Ge ON SiO2 53

ION/NEUTRAL BEAM ASSISTED ETCHING OF SEMICONDUCTORS:CHEMICAL MODIFICATIONS OF THE ADSORBED PHASE 61

Glenn C. Tyrrell, Duncan Marshall, andRichard B. Jackman

*Invited Paper






PART II: MICROWAVE ION SOURCESFOR DEPOSITION AND ETCHING

PROPERTIES OF SiO2 FILMS FABRICATED BY MICROWAVE ECRPLASMA PROCESSING WITH AND WITHOUT ENERGETIC PARTICLEBOMBARDMENT DURING FILM DEPOSITION PART I. FABRICATIONPROCESSES AND PHYSICAL PROPERTIES 69

T.T. Chau, S.R. Mejia, and K.C. Kao

STRUCTURAL AND INTERFACIAL CHARACTERISTICS OF THIN(<10 ran) SiO2 FILMS GROWN BY ELECTRON CYCLOTRONRESONANCE PLASMA OXIDATION ON [100] Si SUBSTRATES 75

Tai D. Nguyen, D.A. Carl, D.W. Hess,M.A. Lieberman, and R. Gronsky

*CUBIC BORON NITRIDE PREPARED BY AN ECR PLASMA 81Y. Osaka, M. Okamoto, and Y. Utsumi

THE ECR-PLASMA DEPOSITION OF SILICON NITRIDE ON ATUNNEL OXIDE 91

J.C. Barbour, H.J. Stein, and C.A. Outten

*ECR PLASMA ETCHING TECHNOLOGY FOR ULSIs 97Seiji Samukawa

THE MECHANISMS OF REACTIVE ION ETCHING OF SiOx (x<2)WITH ELECTRON CYCLOTRON RESONANCE AND KAUFMAN IONSOURCES 109

R.A. Kant, C.R. Eddy, Jr., and B.D. Sartwell

SHALLOW P+-N JUNCTION FABRICATION BY PLASMA IMMERSIONION IMPLANTATION 115

C.A. Pico, X.Y. Qian, E. Jones, M.A. Lieberman,and N.W. Cheung

ELECTRON CYCLOTRON RESONANCE HYDROGENATION OF POLY-SiTHIN FILM TRANSISTORS ON SiO2/Si SUBSTRATES 121

Gand Liu, Robert A. Ditizio, Stephen J. Fonash,and Nang Tran

ELECTRON CYCLOTRON RESONANCE HYDROGEN PLASMA INDUCEDDEFECTS IN THERMALLY GROWN AND SPUTTER DEPOSITED SiO2 127

W.L. Hallett, R.A. Ditizio, and S.J. Fonash

PART III: PROCESSING OF HIGH-TcTHIN FILMS AND INTERFACES

*THIN FILM GROWTH OF HIGH Tc SUPERCONDUCTORS BY MICRO-WAVE PLASMA ASSISTED REACTIVE EVAPORATION 135

Akira Tsukamoto, Masahiko Hiratani, ToshiyukiAida, Yoshinobu Tarutani, and Kazumasa Takagi

CRYSTALLINE ORIENTATION CONTROL IN Bi-Sr-Ca-Cu-0 THINFILMS 147

Yoshiki Ishizuka, Yoshiaki Terashima, andTadao Miura

*Invited Paper






STUDY OF THE ORIENTATION OF Y1Ba2Cu307_x THIN FILMSIN-SITU PREPARED BY REACTIVE COEVAPORATION WITH RFACTIVATED OXYGEN-OZONE PLASMA 153

M. Nagata, H. Nojima, H. Shintaku, and M. Koba

PREPARATION OF OPTICALLY SMOOTH SURFACES OF HIGH-TCSUPERCONDUCTING FILMS 159

J.H. Kim, A. Kapitulnik, J.S. Harris, Jr.,K. Char, I. Bozovic, and W.Y. Lee

PLASMA OXIDATION OF Y-Ba-Cu-0 PRECURSOR FILAMENTS 165J.D. Klein, J.P. Hachey, and A. Yen

ENERGY DISTRIBUTION OF NEGATIVE OXYGEN IONS EMITTEDFROM YBaCuO AND IRON GARNET TARGETS BY dc- AND rf-MAGNETRON SPUTTERING 171

Jens-Peter Krumme, Ron A.A. Hack, and Ivo J.M.M.Raaijmakers

PART IV: ELECTRONIC MATERIALS: III-V COMPOUNDS

*GaAs EPITAXIAL GROWTH BY ECR-MBE 179Naoto Kondo, Yasushi Nanishi, Tomohiro Shibata,Norio Yamamoto, and Masatomo Fujimoto

CH4:H«:Ar rf/ECR PLASMA ETCHING OF GaAs AND InP 191Victor J. Law, S.G. Ingram, G.A.C. Jones,R.C. Grimwood, and H. Royal

STRUCTURAL AND COMPOSITIONAL MODIFICATIONS OF III-VTERNARY AND QUATERNARY COMPOUNDS INDUCED BY IONBOMBARDMENT 197

A. di Bona, A. Facchini, S. Valeri, G. Ottaviani,and A. Piccirillo

PERSISTENT PHOTOCONDUCTIVITY AND THERMAL RECOVERYKINETICS OF LOW ENERGY Ar+ BOMBARDED GaAs 203

A. Vaseashta and L.C. Burton

ELECTRICAL DAMAGE DUE TO LOW ENERGY PLASMA PROCESSINGOF GaAs STRUCTURES 2 09

Hans P. Zappe and Gudrun Kaufel

CHEMICAL PRECURSORS FOR GaAs ETCHING WITH LOW ENERGYION BEAMS: CHLORINE ADSORPTION ON GaAs(lOO) 215

Richard B. Jackman, Glenn C. Tyrrell,Duncan Marshall, Catherine L. French, andJohn S. Foord

PART V: ELECTRONIC MATERIALS: SILICON AND Si-Ge

HETEROEPITAXY OF Si/Si1_xGex GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR*DEPOSITION 223

T. Hsu, R. Qian, D. Kinosky, J. Irby, B. Anthony,S. Banerjee, A. Tasch, and C. Magee

*Invited Paper






EVIDENCE OF OSCILLATING OXIDE GROWTH MECHANISM DURINGOXYGEN PLASMA OXIDATION OF SILICON 229

Son Nguyen, Tue Nguyen, D. Dobuzinsky, R. Gleason,and M. Gibson

ROOM TEMPERATURE NITRIDATION AND OXIDATION OF Si, GeAND MBE-GROWN SiGe USING LOW ENERGY ION BEAMS (0.1 -1 keV) 235

0. Vancauwenberghe, O.C. Hellman, N. Herbots,J.L. Olson, W.J. Tan, and W.J. Croft

ATOMIC HYDROGEN PASSIVATION OF HIGH ENERGY HYDROGENIMPLANTS 241

K. Srikanth, J. Shenal, and S. Ashok

THE ROLE OF OXYGEN IN THE CF2Cl2 REACTIVE ION ETCHINGOF PECVD FILMS 249

Yue Kuo

THE INFLUENCE OF HBr DISCHARGE AMBIENCE ON POLY-Si/SiO2 ETCHING SELECTIVITY 255

E. Ikawa, K. Tokashiki, T. Kikkawa, Y. Teraoka,and I. Nishiyama

PART VI: ION PROCESSING OF OXIDES,NITRIDES, POLYMERS, AND CARBON

*ION EFFECTS IN OPTICAL FILMS 263U.J. Gibson

*ION BEAM SPUTTER DEPOSITION OF FERROELECTRIC OXIDE THINFILMS 273

Thomas M. Graettinger, O. Auciello, M.S. Ameen,H.N. Al-Shareef, K. Gifford, and A.I. Kingon

PREPARATION OF Bi 4Ti 30 1 2 FILMS BY ECR PLASMA SPUTTERING 283Hiroshi Masumoto, Takashi Goto, Youichirou Masuda,Akira Baba, and Toshio Hirai

DEPOSITION OF ALUMINUM NITRIDE FILM BY ION BEAM ENHANCEDREACTIVE MAGNETRON SPUTTERING 289

R.F. Huang, L.S. Wen, H. Wang, J. Wu, and R.J. Hong

MODIFICATION OF PROPERTIES OF ION-BEAM-SPUTTEREDYTTRIUM-OXIDE THIN FILMS BY LOW-ENERGY ION BOMBARDMENT 295

K.A. Klemm, L.F. Johnson, and M.B. Moran

OXIDATION OF A1N-A12O3 COMPOSITE FILM PREPARED BY MICRO-WAVE PLASMA CVD 301

Yoshihiro Someno, Makoto Sasaki, and Toshio Hirai

CARBON FILM DEPOSITION ON SILICON USING LOW ENERGY IONBEAMS 3 07

Qin Fuguang, Yao Zhenyu, Ren Zhizhang, S.-T. Lee,1. Bello, X. Feng, L.J. Huang, and W.M. Lau

*Invited Paper






SYNTHESIS OF BORON NITRIDE FILM BY ION BEAM DEPOSITION 315Z. Xia, G.L. Zhang, and W.L. Lin

PACVD FLUORINATED SILICON NITRIDE FILMS DEPOSITED FROMSiF4/NH3 GAS MIXTURES 321

A. Castro, M. Gasset, C. Gomez-Aleixandre,O. Sanchez, and J.M. Albella

THE ROLE OF DILUTION GAS IN PLASMA DEPOSITION OFAMORPHOUS HYDROGENATED CARBON 327

Hsueh Yi Lu and Mark A. Petrich

PART VII: ION PROCESSING OF METALS

*ION BEAM DEPOSITION OF MULTILAYER MAGNETIC FILMS 335Masakatsu Senda

THIN FILM GROWTH USING LOW-ENERGY MULTI-ION BEAMDEPOSITION SYSTEM 347

S. Shimizu, N. Sasaki, S. Ogata, O. Tsukakoshi,S. Seki, and H. Yamakawa

OPTICAL SPECTROSCOPIC PROFILING OF ION BEAM SPUTTERING 353J.D. Klein and A. Yen

THE EFFECTS OF ION ENERGY ON CARBON AND TUNGSTEN FILMSFABRICATED BY DIRECT ION BEAM DEPOSITION AND ION BEAMSPUTTERING DEPOSITION 359

I. Kataoka, K. Ito, N. Hoshi, T. Yonemitsu,K. Etoh, I. Yamada, and Jean-Jacques Delaunay

THE INFLUENCE OF ION BOMBARDMENT ON THE SURFACECOMPOSITION OF 70 wt% Cu-30 wt% Zn ALPHA-BRASS 365

Vjekoslav Franetovic

PLASMA IMMERSION SURFACE MODIFICATION WITH METAL IONPLASMA 371

I.G. Brown, X. Godechot, and K.M. Yu

SELECTIVE COPPER PLATING IN SILICON DIOXIDE TRENCHESWITH METAL PLASMA IMMERSION ION IMPLANTATION 377

Meng-Hsiung Kiang, Carey A. Pico,Michael A. Lieberman, Nathan W. Cheung,X.Y. Qian, and K.M. Yu

MAGNETRON-ENHANCED REACTIVE ION-ETCHING OF Al-l%Si-2%Cu ALLOY 385

C.Y. Fu, R. Hsu, and V. Malba

ARGON PLASMA INDUCED SURFACE MODIFICATIONS FORRESISTLESS PATTERNING OF ALUMINUM FILMS 389

Neeta Agrawal, R.D. Tarey, and K.L. Chopra

AUTHOR INDEX 395

SUBJECT INDEX 397

*Invited Paper






Preface

The Symposium on Low Energy Ion Beam and Plasma Modifica-tion of Materials was held at the Spring 1991 Material ResearchSociety Conference in Anaheim, CA, April 30 - May 2, 1991. Thissymposium was designed to show the wide range of materials whichcan be modified advantageously by low energy particles from ionbeam and plasma sources. The presentations from invitedspeakers are highlighted below. These invited talks set thetone and topical range of each session, and demonstrated theremarkable variety of properties which may be modified by ionand plasma methods.

The first session, on Fundamentals and Modeling, emphasizedbasic ion-material interactions, and was highlighted by twovideotapes of computer simulations, one of epitaxial Si growthfrom Si ions of energy 10-20 eV, by M. Kitabatake, and one ofcarbon ion deposition at 10-50 eV. These simulations enabledviewers to clearly visualize the seguence of a 10 eV ion settingthe target surface into oscillation, then finding its way to anepitaxial position. J. Biersack presented an overview of MonteCarlo simulations, including his recent extension of the widelyused TRIM code to model the growth of thin films under simul-taneous ion bombardment.

Recent developments in electron cyclotron resonance (ECR)sources and microwave-excited plasma sources were reviewed by L.Berry. The conditions of resonance which produce high iondensities at low energy were clarified, and it was shown thation densities up to 10% of the gas density are achievable at aninput of only 100 eV per ion. Applications of ECR sources toreactive ion etching were reviewed by S. Samukawa. Otherapplications included deposition of silicon nitride and silicondioxide, hydrogen passivation of Si, and deposition of boronnitride, which was described by Y. Osaka.

In a joint session with the Symposium on Interfaces inHigh-Temperature Superconducting Systems, talks by J. Kwo and A.Tsukamoto demonstrated the application of ECR sources to thesynthesis of YBaCuO and HoBaCuO. This improved method foroxygen incorporation enables these perovskite materials to besynthesized at temperatures as low as 500-680°C. A. Hebarddescribed how ion beam etching at glancing angle is successfulin thinning high-temperature superconductors to as little as afew lattice constants. A session on III-V materials includedthe application of ECR sources to the epitaxial growth of GaAsat temperatures as low as 350 °C on GaAs and 400°C on Si,described by N. Kondo. Selective growth of GaAs at 630°C wasalso demonstrated.

Ion beam techniques have dramatically improved the qualityof optical thin films. The techniques for controlling densityand refractive index were reviewed by U. Gibson, and recentresults on modulating the index of ZrF4 from 1.5 to 1.8 byoxygen ion bombardment were shown. This approach is suitablefor the fabrication of graded index (GRIN) structures whilemaintaining planarity. Ferroelectric materials share many






processing challenges with the family of high-temperaturesuperconductors. A. Kingon showed how controlled ion beamsputtering allows optimized deposition from dual targets of K02

and Nb to produce high quality films of ferroelectric KNbO3 at500-600°C.

Polymers constitute another large class of materials easilymodified by ion bombardment. S. Molis reviewed the effects of500 eV argon ion bombardment of polyimide and showed howinfrared spectroscopy reveals a shift to a more carbon-richsurface layer which is one thousand times more resistant towater absorption than non-bombarded polyimide.

The symposium concluded with a session on metal filmmodification. A talk on multilayer magnetic films by M. Sendashowed how magnetic anisotropy and coercivity respond dramati-cally to changes in ion beam deposition conditions. The themeof the symposium was well illustrated in the wide range ofmaterials presented. Low energy ion beam and plasma treatmentof materials causes a surprising variety of property changes,and continues to be a powerful resource for the materialsscientist.

James M.E. HarperKiyoshi MiyakeJohn R. McNeilSteven M. Gorbatkin

May 5, 1991






Acknowledgments

We greatly appreciate the financial support of thissymposium provided by:

ASTEX (Applied Science and Technology)Commonwealth Scientific CorporationHitachi Research LaboratoryIBM T.J. Watson Research CenterIon Tech, Inc.Lam Research, Inc.Matsushita Electric Industrial Co., Ltd.NEC VLSI Development DivisionNissin Electric Co., Ltd.NTT Optoelectronics LaboratoriesULVAC Japan, Ltd.

In addition to the invited speakers listed in the Preface,we thank the following session moderators for their help inrunning the symposium and encouraging discussion:

Richard S. PostSteven M. GorbatkinJames M.E. HarperDavid A. RudmanJun AmanoDavid B. PokerAngus Kingon

We gratefully acknowledge the assistance of Vicki Barnes ofOak Ridge National Laboratory during the preparation of thefinal proceedings.

We also thank our institutions, IBM T.J. Watson ResearchCenter, Hitachi Research Laboratory, the University of NewMexico and Oak Ridge National Laboratory, for supporting ouractivities as co-organizers of this symposium and for supportingthe goals of the Materials Research Society.

xiii






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 201—Surface Chemistry and Beam-Solid Interactions, H. Atwater,F.A. Houle, D. Lowndes, 1991, ISBN: 1-55899-093-3

Volume 202—Evolution of Thin Film and Surface Microstructure,C.V. Thompson, J.Y. Tsao, DJ. Srolovitz, 1991,ISBN: 1-55899-094-1

Volume 203—Electronic Packaging Materials Science V, E.D. Lillie,P. Ho, RJ. Jaccodine, K. Jackson, 1991, ISBN: 1-55899-095-X

Volume 204—Chemical Perspectives of Microelectronic Materials II,L.V. Interrante, K.F. Jensen, L.H. Dubois, M.E. Gross, 1991ISBN: 1-55899-096-8

Volume 205—Kinetics of Phase Transformations, M.O. Thompson, M. Aziz,G.B. Stephenson, D. Cherns, 1991, ISBN: 1-55899-097-6

Volume 206—Clusters amd Cluster-Assembled Materials, R.S. Averback,J. Bernholc, D.L. Nelson, 1991, ISBN: 1-55899-098-4

Volume 207—Mechanical Properties of Porous and Cellular Materials,K. Sieradzki, D. Green, LJ. Gibson, 1991, ISBN-1-55899-099-2

Volume 208—Advances in Surface and Thin Film Diffraction, T.C. Huang,P.I. Cohen, DJ. Eaglesham, 1991, ISBN: 1-55899-100-X

Volume 209—Defects in Materials, P.D. Bristowe, J.E. Epperson, J.E. Griffith,Z. Liliental-Weber, 1991, ISBN: 1-55899-101-8

Volume 210—Solid State Ionics II, G.-A. Nazri, D.F. Shriver, R.A. Huggins,M. Balkanski, 1991, ISBN: 1-55899-102-6

Volume 211—Fiber-Reinforced Cementitious Materials, S. Mindess,J.P. Skalny, 1991, ISBN: 1-55899-103-4

Volume 212—Scientific Basis for Nuclear Waste Management XIV,T. Abrajano, Jr., L.H. Johnson, 1991, ISBN: 1-55899-104-2

Volume 213—High-Temperature Ordered Intermetallic Alloys IV,L.A. Johnson, D.P. Pope, J.O. Stiegler, 1991, ISBN: 1-55899-105-0

Volume 214—Optical and Electrical Properties of Polymers, J.A. Emerson,J.M. Torkelson, 1991, ISBN: 1-55899-106-9

Volume 215—Structure, Relaxation and Physical Aging of Glassy Polymers,RJ. Roe, J.M. O'Reilly, J. Torkelson, 1991, ISBN: 1-55899-107-7

Volume 216—Long-Wavelength Semiconductor Devices, Materials andProcesses, A. Katz, R.M. Biefeld, R.L. Gunshor, RJ. Malik, 1991,ISBN 1-55899-108-5

Volume 217—Advanced Tomographic Imaging Methods for the Analysis ofMaterials, J.L. Ackerman, W.A. Ellingson, 1991,ISBN: 1-55899-109-3

Volume 218—Materials Synthesis Based on Biological Processes, M. Alper,P.D. Calvert, R. Frankel, P.C. Rieke, D.A. Tirrell, 1991,ISBN: 1-55899-110-7






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 219—Amorphous Silicon Technology—1991, A. Madan,Y. Hamakawa, M. Thompson, P.C. Taylor, P.G. LeComber,1991, ISBN: 1-55899-113-1

Volume 220—Silicon Molecular Beam Epitaxy, 1991, J.C. Bean, E.H.C. Parker,S. Iyer, Y. Shiraki, E. Kasper, K. Wang, 1991, ISBN: 1-55899-114-X

Volume 221—Heteroepitaxy of Dissimilar Materials, R.F.C. Farrow,J.P. Harbison, P.S. Peercy, A. Zangwill, 1991, ISBN: 1-55899-115-8

Volume 222—Atomic Layer Growth and Processing, Y. Aoyagi, P.D. Dapkus,T.F. Kuech, 1991, ISBN: 1-55899-116-6

Volume 223—Low Energy Ion Beam and Plasma Modification of Materials,J.M.E. Harper, K. Miyake, J.R. McNeil, S.M. Gorbatkin, 1991,ISBN: 1-55899-117-4

Volume 224—Rapid Thermal and Integrated Processing, M.L. Green,J.C. Gelpey, J. Wortman, R. Singh, 1991, ISBN: 1-55899-118-2

Volume 225—Materials Reliability Issues in Microelectronics, J.R. Lloyd,P.S Ho, C.T. Sah, F. Yost, 1991, ISBN: 1-55899-119-0

Volume 226—Mechanical Behavior of Materials and Structures inMicroelectronics, E. Suhir, R.C. Cammarata, D.D.L. Chung,1991, ISBN: 1-55899-120-4

Volume 227—High Temperature Polymers for Microelectronics, D.Y. Yoon,D.T. Grubb, I. Mita, 1991, ISBN: 1-55899-121-2

Volume 228—Materials for Optical Information Processing, C. Warde,J. Stamatoff, W. Wang, 1991, ISBN: 1-55899-122-0

Volume 229—Structure/Property Relationships for Metal/Metal Interfaces,A.D Romig, D.E. Fowler, P.D. Bristowe, 1991, ISBN: 1-55899-123-9

Volume 230—Phase Transformation Kinetics in Thin Films, M. Chen,M. Thompson, R. Schwarz, M. Libera, 1991, ISBN: 1-55899-124-7

Volume 231—Magnetic Thin Films, Multilayers and Surfaces, H. Hopster,S.S.P. Parkin, G. Prinz, J.-P. Renard, T. Shinjo, W. Zinn, 1991,ISBN: 1-55899-125-5

Volume 232—Magnetic Materials: Microstructure and Properties, T. Suzuki,Y. Sugita, B.M. Clemens, D.E. Laughlin, K. Ouchi, 1991,ISBN: 1-55899-126-3

Volume 233—Synthesis/Characterization and Novel Applications of MolecularSieve Materials, R.L. Bedard, T. Bein, M.E. Davis, J. Garces,V.A. Maroni, G.D. Stucky, 1991, ISBN: 1-55899-127-1

Volume 234—Modern Perspectives on Thermoelectrics and Related Materials,D.D. Allred, G. Slack, C. Vining, 1991, ISBN: 1-55899-128-X

Prior Materials Research Society Symposium Proceedingsavailable by contacting Materials Research Society.






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