ismi 450 mm industry briefing july 2009 4 450 mm timing • ismi programs and schedules are based on...

Accelerating Manufacturing Productivity

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ISMI 450 mm Industry Briefing

July 15th, 2009SEMICON West



Opening Remarks

Scott KramerVice President of Manufacturing Technology

15 July 2009 3

450 mm Rationale

• Wafer size transitions produce cost savings –historical data supports

• Benefits entire industry through continued growth

• Needed to accelerate productivity gains – realizing that free and open markets determine timing

• Technical problems will be solved by continuing innovation across the industry – engineers will continue to innovate

15 July 2009 4

450 mm Timing

• ISMI programs and schedules are based on member company direction and requirements– ISMI consults regularly with its member companies to validate

schedules and priorities– Intel, Samsung, and tsmc have not

indicated a change in their timeline for targeting 450 mm pilot line capabilities beginning in 2012

– ISMI key 450 mm milestones have not changed

• Introduction and timing of any productivity improvements are determined by markets– Decisions by informed buyers and sellers

15 July 2009 5

A Reminder…

• ISMI is open to all ideas – continuous review and adjustment of plans

• There are multiple solutions possible

• Best results come from proactive, 2-way communications



Briefing Agenda and 2009 Program Overview

Tom Jefferson450 mm Program Manager

15 July 2009 7

July 2009 Briefing Agenda

• 2009 450 mm Program Overview• 450 mm Process and Metrology Readiness

– Test Wafer Generation– Equipment Performance Metrics (EPMs)

• 450 mm Silicon Readiness• 450 mm Factory Integration Readiness• 450 mm ESH Guidelines Update• Key Messages• Question and Discussion Session

15 July 2009 8

Coordinating Industry Convergence Towards 450 mm

Equipmentreadiness

Interoperability Test Bed (ITB)

Requirementsguidelines

Early design

Mechanical wafer bank

Single crystal wafer bank • Carrier & loadport

interoperability• Data-driven standards

Equipmentdemonstrations

Equipment Performance Metrics (EPMs)

Test plansEquipmentprototypes

Metrology & process equipment development

25 wafer FOUP

Early prototypes

Test wafer generation

2007

2008

2009

2010+

15 July 2009 9

450 mm Progress – 2008->2009

Defined (32 nm demonstration tools, 22nm equipment for device maker pilot lines)

UnknownTransition Node

Mech. wfr standard passed

Carrier and Loadport stds near completion with critical featuresdetermined (wafer pitch, door opening options)

Task Forces Formed

Standards

>5M handling robot cycles and >530K loadport open/close cycles completed with prototype carriers.

4 EFEMs, 6 loadports, multiple carriers, and 2 PGVs under test

Vacuum platform mainframes are available from multiple suppliers

1 EFEM and 1 carrier in ISMI’s ITB

Factory Integration

Particle inspection, edge inspection, film thickness, and particle removal equipment are ordered, will arrive at ISMI and process 450 mm wafers in H2’09

Additional equipment capabilities are under development now

NoneProcess and Metrology Equipment

Single crystal wafers available for developmentSintered wafers available for development

Wafer Inventory

Jul-2009Jul-2008

Solid Progress – But Many Challenges Remain

15 July 2009 10

ISMI Supplier Acknowledgement

ISMI 450 mm Program would like to acknowledge the following companies for their support and participation in

the 450 mm Program:

Angstrom Sun Asyst TechnologiesBrooks Automation CDE CyberOptics Corp Entegris, Inc.Genmark Automation Gudeng Precision IndustrialH-Square Hirata CorpIDC NanophotonicsNikko SSECSUMCO SinfoniaTDK

15 July 2009 11

ISMI 450 mm Program Mission and ObjectivesMission• Enable a cost-effective 450 mm transition through coordination

and development of infrastructure, guidance, and industry readiness

2009 Objectives• Enable the supply of 450 mm single crystal silicon to continue 450 mm

equipment development• Develop test wafer generation capabilities, equipment performance

metrics, and demonstration test methods to enable equipment demonstrations in 2010

• Cleanroom evaluation of standards-compliant 450 mm carriers, loadports, and EFEMS

• Creation of 450 mm ESH guidelines with an emphasis on “green manufacturing”

• Industry coordination and communication to enable the 450 mm transition

15 July 2009 12

450 mm Technology Node Intercept Strategy

• The IC makers committed to the 450 mm transition have significant differences in products, business models, and technologies

• But they have agreed on nominal performance targets, common timeline, and strategy for test wafer generation, equipment demonstrations, and first-generation production equipment– 450 mm test wafer generation capabilities in 2009, with 300 mm-

equivalent capability– Equipment demonstrations for process and metrology equipment in 2010

to 2012, with 32 nm [1] capability– Production-ready equipment capable of supporting IC maker pilot lines in

2012+ with technology scalable to 22 nm [1] and beyond

This alignment can help minimize development costs [1]:

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15 July 2009 13

ISMI Equipment Development Strategy

Bare wafers for alpha tool development

Beta/demo tool developmentAlpha tool development

Bare wafer

supply

Bare wafers for beta/demo tool development

Demo execution

Demo tool ready

Equipment Performance Metrics (EPMs) Guide Supplier Demo Tool Development Targets

Process and reliability data

Capable of meaningful

demonstration

Next generation toolInitial prototype

Basic quality wafers Significantly improved quality

Test wafers (TWs) for alpha tool development

TW for beta/demo tool development

TWs for equipment

demosWafers for

process testing

Basic test wafers from minimal toolset Increased sophistication with better tools and more tool types

Targets useful for alpha tool and demo tool design



Test Wafer Generation

Tom AbellTest Wafer Generation Project Manager

15 July 2009 15

Test Wafer Problem Statement

• Process and metrology equipment suppliers need test wafers (TWs) to create their processes for in-house prototype tool development

• Test wafers must be of sufficient quality and quantity for each stage of equipment development– Lower quality requirements for early prototypes and

testing– Increasing sophistication and particle quality for process

and hardware refinement

15 July 2009 1616

Test Wafer Generation Strategy

Motivation

• Feedback from the 300 mm conversion was that I300I coordination of test wafer generation was very important– Helped to significantly reduce development costs

ISMI Approach

• Coordinate wafer processing capability in phases to meet demands of sophistication

• Lend processed wafers to suppliers for 450 mm process and metrology equipment development

15 July 2009 17

Test Wafer Generation StagesEarly test wafers to get critical early tool capability developed

• Key item to get very basic test wafers into suppliers’ hands to begin development of other TW tools

• Tools and processes would not be expected to be of demonstration maturity

• Virtual processing at suppliers’ site OK for most processes

Test wafers to enable suppliers to develop demonstration tools• Sophisticated development-grade test wafers are required

• 193 nm litho & patterning capability with many other tool types required for demo tool development

• Sufficient quantities of wafers will be needed for adequate testing and refinement

• Virtual processing at suppliers’ site OK for some processes (i.e., not litho/track)

Test wafers to execute demonstrations at 32 nm technology node or beyond• Suppliers need very sophisticated test wafers to refine their processes to 32 nm or beyond

• Sufficient quantity of wafers is required to execute process testing and reliability marathons with process stability testing

15 July 2009 18

ISMI Equipment Development Strategy- Test wafer relationship to overall program

Bare wafers for alpha equipment development

Beta/demo tool developmentAlpha tool development

Bare wafer

supply

Bare wafers for beta/demo equipment development

Demo execution

Demo tool ready

EPMs Guide Supplier Demo Tool Development Targets

Process and reliability data

Capable of meaningful

demonstration

Next generation toolInitial prototype

Basic quality wafers Significantly improved quality

TWs for alpha equipment development

TWs for beta/demo equipment development

Demo TW generation

Sufficient quality TW for process testing

Basic test wafers from minimal toolset

Increased sophistication with better tools and more

tool types

Early TW processing

Beta/demo tool enabling TWs

Targets useful from alpha tool to demo tool design

More sophisticated TW processing

Early alpha tool enabling TWs

15 July 2009 1919

Early 450 mm Test Wafer Generation- Top Priority Capabilities

Particle Detection Metrology Film Thickness Metrology Vertical Diffusion Furnace Wet CleansPVD Metal PECVD DielectricTrackLithographyDielectric Dry EtchDry Strip AsherCD MeasurementDielectric CMP

• All equipment must be safe to operate and maintain for supplier and ISMI

= capabilities selected by ISMI, to date

Early particle data from ISMI’s NanoPhotonics tool on a 450 mm single crystal wafer

15 July 2009 20

ISMI CLEANROOM

ISMI 450 mm Cleanroom Space

• Layout for first cleanroom hardware, storage, and support tables• Space available for more test wafers, silicon, and ITB hardware

SSEC Wet Clean

NanoPhotonics Defect and Edge

Inspection

FOUP storage platforms

Transfer tables

Brooks EFEMBrooks LP

15 July 2009 21

Relaxed Expectations for Early TW Generation Tools• Some early TW tools can utilize manual loading but others cannot (i.e., defect

inspection, wet cleans)– Automated loading and unloading of FOUPs is desirable– 450 mm loadports and equipment front end modules are desired with the

understanding that standards have not yet been set (e.g., prototypes will be used)• Process capability is desired to match current 300 mm capability

– Certain tools are known to have significant process challenges with scaling– Lower capabilities may be acceptable during the early phases of test wafer

generation• Defect densities are a lower concern for the early TW tools

– Initial measurement capability at ISMI will be 90 nm diameter moving to 65 nm– Defects on single crystal wafers are expected to be minimized and improved

through upgrades or tool revision• Reliability and throughput are lesser concerns if they are sufficient to support

TW needs– No availability or run rate metrics are specified at this stage– Both are expected to improve over time with upgrades or tool revision

21

15 July 2009 22

Proposal/Quote

Positive on 450

Selection made

ISMI wfs loaned

1st TWs moved

Tool build started

1st TWs processed

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Phase 2Blanket wafer capabilities

Phase 3Patterned wafer capabilities

Jul ’09 Status Nan

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6 of 8 capabilities needed in Phase 2 have been acquired

Supp

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Supp

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Supp

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Phase 1: SiliconSu

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Early TW Equipment Supplier Readiness

15 July 2009 23

Summary

• ISMI has met with over 60 suppliers to discuss 450 mm plans and involvement with ISMI’s program

• 6 of 8 initial capabilities have been selected for Phase 2 test wafer generation– 3 ship in Q3’09, 2 at supplier labs, 1 recently selected– Phase 2 test wafer generation is in motion

• Phase 3 capabilities are in active discussion– 6 of 6 tool types have suppliers’ interest– 2 quotes received

15 July 2009 24

Next Steps

• If you are interested in– Discussing the overall test wafer generation project– Discussing test wafer types and metrology needs– Receiving processed test wafers for your development

program– Participating in the generation of test wafers for ISMI

• Please direct inquiries to– Tom Abell – 450 mm Senior Advisor and Test Wafer

Generation Project [email protected]



ISMI 450 mm Equipment Performance Metrics and Demonstration Readiness

Kuo-fu ChienDemonstration Readiness Project Manager

15 July 2009 26

Introduction

• IC makers wish to work with suppliers of wafer fab equipment to achieve capability for pilot lines in 2012 and prepare to manufacture their products on 450 mm wafers. They have determined that their technology targets for the period coincide well with ITRS definitions for contacted metal half-pitch at the 32 nm and 22 nm generations.

• The development and demonstration phase, roughly from 2010 to 2012, will focus on 32 nm capability from early testing to firstproduction-worthy process and metrology equipment.

• Equipment maturation thereafter must achieve high volume manufacturing (HVM) cost/performance to support production ramp while technology scales to 22 nm and beyond.

15 July 2009 27

Purpose and Objective

• Equipment Performance Metrics (EPMs) provide customer targets for critical process and manufacturing performance metrics to suppliers as they begin development of 450 mm equipment.

• We look forward to the beginning of manufacturing on 450 mm wafers for the entire fab tool set.

15 July 2009 28

Sources of Metrics

• Most process parameters come from ITRS technology requirements• Bare wafer defect requirements are derived from a new ISMI model

that will be incorporated into the next revision of the ITRS Yield Enhancement section

• Manufacturing metrics are a mix of ITRS Factory Integration requirements and expectations set for 300 mm – e.g., Availability from ITRS reliability metrics from I300I– 450 mm should achieve same cycle time as 300 mm

• Some come from customers; e.g., ESH imperatives, consumable reduction, use of PGV

• All have been previewed and improved by member companies’technical experts

• Supplier inputs were incorporated before EPM publications through a series of 3 workshops

15 July 2009 29

Process for Metrics Creation

3) ISMI Provide StrawmanMetrics and Methods

1) ISMI Provide Tool List

4) Member Companies Provide Feedback

5) Consult with Suppliers

6) Validate Cost andFactory Performance with

Metrics Set

7) Publish Equipment Performance Metrics and Test Methods

2) Member CompaniesProvide Tool Priorities

15 July 2009 30

General Requirements in the EPM

• The overarching requirement for 450 mm manufacturing is that it maintain the advantageous cost structure that has enabled continuing growth for industry

• A boundary condition is that 450 mm equipment be more productive than its 300 mm predecessor

• 450 mm manufacturing capability must comprehend re-use of existing 300 mm facilities

• Consumables should be held to the same level for 450 mm as for 300 mm on a per-wafer basis.

• ESH requirements are, broadly, to maintain or reduce the amounts of effluents and the use rates for energy, chemicals, and water for 450 mm tools relative to 300 mm 2008 baseline on a per-wafer basis

• It is an absolute requirement that all equipment must be safe to operate and maintain at any stage of maturity

• Equipment spare parts and modules must either be small and light enough to handle safely during maintenance and clearances adequate or ergonomic handling aids must be provided

15 July 2009 31

How to View the EPM Requirements

• Each metric is listed by attribute with units and targets for 32 nm and 22 nm.

• Suppliers should target 32 nm capabilities for the 2010-11 demonstration period and plan for extension to 22 nm capability for device maker pilot lines targeted for 2012. Manufacturing metrics are expectations for HVM.

• It is recognized that, initially, tools will not be as capable of achieving either process or productivity goals as the metrics presented in this document and may not comply with all guidelines and standards.

15 July 2009 32

EPMs are completed for 60 450 mm Process and Metrology Equipment, Organized into 11 Tool Groups

Will depend on process chemistryTo be measuredTo be measuredMTB/T Clean

< 2< 4hourMTTR> 500> 500hourMTBF

9595%Availability Manufacturing Targets(@ High Volume Manufacturing Phase)

Need to find better solution for e-chuck toeliminate need forpost-etch backside clean

< 0.28 @ > 50 nm< 0.28 @ > 75 nm#/cm2Backside on Si

< 0.0060< 0.0084#/cm2On bare Si > 30 nmDefects, PWP @ 1.5

mm edge exclusion

NoneNone-Residue after etchTo be measuredTo be measured-Charge Damage

Etch rate difference l/s to iso< 5< 5 %Loading Effect

> TBD, each company input selectivity requirements w.r.t materials

chosen

> TBD , each company input selectivity

requirements w.r.t materials chosen

-Selectivity to

ProcessCharacteristics

< 1< 1.5nmTotal Variability 3 σ – all sources

Criteria of ITRSCriteria of ITRS

32>88.7

40>88.2

nmDeg

STI Width at topSTI Sidewall angle

Criteria of ITRS309323nmSTI Depth Bulk

ProcessTargets

RequiredRequired-In-situ Chamber Clean Capability

Need better solution to eliminate bevel polymercontamination

OptionOptionin-situ Bevel Clean Capability

RequiredRequired-Auto End-point Detection

EquipmentParameters

NotesMetrics (22 nm)Metrics (32 nm)UnitsAttribute

Example:5.1 Dry Etch Dielectric, Poly - Active Area/STI

15 July 2009 33

Equipment Performance Metrics by Tool Type

SiGeEpitaxyCVD3.12

(3) TungstenCVD3.11

(2) High k DielectricCVD3.10

(1) DielectricALDCVD3.9

(4) TiN Metal Hard Mask for Damascene EtchCVD3.8

(3) TaN/Ta Barrier for Cu Metal layersCVD3.7

(2) Contact – Ti/TiN Barrier for W PlugCVD3.6

(1) Contact – Tungsten PlugMetal CVDCVD3.5

(4) Contact - Nitride Etch Stop & LinerCVD3.4

(3) Low k DielectricCVD3.3

(2) SiN, SiCN Barrier/Etch Stop/CapCVD3.2

(1) Active Area - STI Fill - Undoped OxPECVD (HPCVD or HARP)CVD3.1

CVD

(2) Damascene - Copper PolishCMP2.3

(1) Contact – Tungsten Plug PolishMetalCMP2.2

Contact - Planarize PSGDielectricCMP2.1

CMP

All levelsCoat/developTrack1.4

Non-critical levels248 nmExposure1.3

Critical levels193 nm ImmersionExposure1.2

Critical levels193 nmExposure1.1

Lithography

Process ExampleTool DescriptionTool TypeTool No.

15 July 2009 34


Source/DrainLow Energy/High CurrentImplant/Plasma Immersion8.3Gate ExtensionsMedium CurrentIon Implantation8.2Deep WellsHigh EnergyIon Implantation8.1

DopingDamascene FillCopperElectrochemical Plating7.1

Electrochemical Plating(3) Gate Electrode, Silicide, Metal Hard MaskDry Strip6.3(2) Source/Drain ImplantDry Strip6.2(1) Active AreaAsherDry Strip6.1

Dry StripBevel Edge Clean EtchDry Etch5.8

(2) Metal Hard Mask for DamasceneDry Etch5.7(1) Gate - Metal ElectrodeMetalDry Etch5.6Gate - Polysilicon/ARC PolyDry Etch5.5(3) Via/Damascene TrenchDry Etch5.4(2) ContactDry Etch5.3(1) Gate - Nitride SpacerDielectricDry Etch5.2Active Area - STI TrenchDielectric; PolyDry Etch5.1

Dry Etch(3) TiN Metal Hard Mask for Damascene EtchPVD4.6(2) TaN/Ta Barrier for Cu Metal LayersPVD4.5(1) Contact – Ti/TiN Barrier for W PlugReactive SputterPVD4.4(3) Cu SeedPVD4.3(2) Silicide Metal PVD4.2(1) Gate MetalPVD-MetalPVD4.1

PVDProcess ExampleTool DescriptionTool TypeTool No.

15 July 2009 35


Patterned Defect11.5Overlay11.4CD11.3Film Thickness11.2Bare Wafer Particle11.1

MetrologySolvent CleanSolventWet Clean10.5(3) Backside CleanWet Clean10.4(2) Post-AshWet Clean10.3(1) Particle RemovalWet CleanWet Clean10.2Active-area- Oxy-Nitride StripWet NitrideWet Etch10.1

Wet Process (Single Wafer or Batch Process?)Source/Drain AnnealMillisecond AnnealThermal Process9.10(2) Source/Drain AnnealThermal Process9.9(1) SilicideRapid Thermal AnnealThermal Process9.8Gate ElectrodePoly LPCVDThermal Process9.7Gate SpacerNitride LPCVDThermal Process9.6(2) Low Temp AnnealThermal Process9.5(1) DensificationAnneal Vertical FurnaceThermal Process9.4(3) N-well Sacrificial OxideThermal Process9.3(2) Rounding oxidationThermal Process9.2(1) Active area- Field OxideOxidation Vertical FurnaceThermal Process9.1

Thermal ProcessProcess ExampleTool DescriptionTool TypeTool No.

15 July 2009 36

Global Equipment Requirements

Background• As part of the Equipment Performance Metrics, equipment

suppliers requested guidance on generic requirements and scalars.

• Samsung, tsmc, and Intel jointly developed and have a consensus on the requirements.

• The global requirements apply to all process and metrology equipment.

• Requirements are split into two categories:– Carryover requirements from 300 mm – these are key 300 mm

requirements that are critical to 450 mm– 450 mm scalars and requirements – these are specific to 450 mm

15 July 2009 37

300 mm Carryover Requirements

15 July 2009 38

450 mm Scalars and Requirements

Note: Relative scalar = (450 mm capability/300 mm capability) normalized to tool run rate. For example:

x0.1

hourper wafers300mmfootprint tool300mm

hourper wafers450mmfootprinttool450mm

scalar footprint factory Relative ≤=

n/a≤ 1.0x

Utilities Consumption and wasteemissions/effluent per wspw(e.g., water, process matls, electrical, scrubbed exhaust, PFCs, bulk gases, etc)

Utilities14

TT# 06124825A-ENGISMI Consensus

100% SpecCompliance

ISMI ESH guidelines:Risk characterization of MMH activitiesSupplier provided fall protectionMass balance characterization

EHS13

n/a≤ 1.0xRelative tool qualification duration scalar12

n/a≤ 1.0xRelative tool installation duration scalar11

n/a≤ 1.0xRelative equipment footprint scalar

Equip

10

Spec Source450 mm Requirement

450 mm Scalars &Requirements

15 July 2009 39

Highlights of EPM Workshops

• Broad supplier participation (total 83 representatives from 29 suppliers) with IC makers and ISMI– Good mix of management, marketing, and technical participation

• Accomplished the key objective to launch constructive technical consultation between IC makers and suppliers, and generated information for inclusion in EPMs

• Suppliers and IC makers engaged constructively– Many good questions– Suggestions for additional metrics

• Several suppliers expressed appreciation for good technical discussion

15 July 2009 40

Equipment Demo Readiness Planning1H 2009 - Equipment Performance Metrics – COMPLETED

2H 2009 - Demonstration Test Methods Workshop• Tuesday October 20, 2009, ISMI Symposium, Austin, TX

Objective– Provide an overview of the test methodologies that the ISMI 450 mm Program will

use during evaluation of 450 mm process and metrology equipment.Target Workshop Participants

– Product development managers, engineering managers, and others responsible for the development and qualification of 450 mm process and metrology equipment.

2010 – 2012+• Demonstration of capabilities in 2010-2012 timeframe (32 nm specifications)

and technology scaling to 22 nm specifications for device maker production launch in 2012+.

15 July 2009 41

Equipment Demo Readiness Planning• Demonstration Test Method (DTM)

– Used in 300 mm to be adapted to 450 mm demos. Scaling of metrics will be based upon equipment maturity. Individual supplier discussions will be necessary. Demo test results will be available to suppliers before publication. Same test methods will be applied to all demonstrations.

• Demo Location– Time and location to be determined by the most feasible equipment demo

location. A centralized facility offers some logistical advantages. • Demo Performance

– Suppliers will be allowed to analyze and comment on the data and results.– ISMI staff will prepare a report of test results be available to suppliers

before publication. – Suppliers will have a section in the final report to comment on the

demonstration and its results. • Demo Cooperation

– ISMI can also coordinate activities between suppliers to facilitate development in some cases.

15 July 2009 42

Tool evaluation reportAssumptions :1. Test wafer available in 20092. Beta tools for 32 nm process demonstration

ITRS, ISMI member surveyTool attributes &

Performance metrics

Form project core team& performance requirement

Review & consult with supplier

Tool list & processrequirements

Demo plan Contract/SOW negotiation

Demo agreements with metrics and method

Workshop supplier survey

Demo tools select

Tool demo

Resource allocation

Project initiation &demo test method

Tool evaluationresult good?

Completed

Next Steps

In Progress

450 mm Tool Demo Process Flow

15 July 2009 43

Conclusion

• We wish to thank all who have participated in this initial compilation of requirements for the 450 mm fab tool set; the inputs of both IC makers and equipment suppliers are much appreciated. We recognize that as we move into development, our collective understanding of the performance will result in further revisions of the EPM going forward.



Silicon Readiness

Mike Goldstein/Paul CherryDemonstration Readiness Project Managers

15 July 2009 45

Overview

• Silicon industry update

• ISMI activities

• SEMI spec status

• Summary

15 July 2009 46

Silicon Industry Update

• All major silicon suppliers have produced engineering samples and are ready to support the program.

• We see continuous improvement in the wafer quality as suppliers and equipment manufacturers advance on the learning curve and shipping methods are improved.

• Inspection equipment is coming on line.

• We are engaged with suppliers to close gaps in silicon manufacturing and inspection line.

15 July 2009 47

Wafer Quality Improvement

• The wafer quality is improving as suppliers and equipment manufacturers advance on the learning curve. – e.g., Wafer grinding pattern as revealed by NanoPhotonics haze maps.

First polished batch Second polished batch

15 July 2009 48

Planetary pad grinding has been successfully demonstrated on 450 mm single crystal silicon wafers at the Peter Wolters Wafer Technology Center

Peter Wolters AC 2000-P³ processing 450 mm single crystal wafers PPG ground 450 mm single crystal Si-wafer

Planetary Pad Grinding

15 July 2009 49

450 mm Wafer CMP Simulations

Slurry Film Mean Thickness Comparison Temperature Distribution (60 sec)

Steady State Pad Temperature

There have been some concerns about slurry flow and temperature distributions in scaling the CMP process from 300 mm to 450 mm wafers.

Simulation work done by ARAKA Corp. shows that these concerns are unfounded. The slurry thickness, the heating pattern, and the temperature distribution look remarkably similar for these two wafer sizes

15 July 2009 50

ISMI activities

• Wafer bank and loan program

• Wafer sag validation

• Wafer inspection– Particle measurement tool– Edge inspection tool

• Wafer shippers – FOSB– SWS

15 July 2009 51

Wafer Bank Status

~300 wafers, more than half single crystal, are currently available for loans

450mm Wafer Bank Loans

0

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150

200

250

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350

Mar-08

Apr-08

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Jun-0

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15 July 2009 52

ISMI Particle/Edge Inspection Module

Edge Inspection Tool

Particle Inspection ToolBrooks EFEM

Particle/edge inspection module installation at ISMI will be completed in Q3.

Courtesy of NanoPhotonics

15 July 2009 53

450 mm FOSB

450 mm Clean Shipping Methods

Wafer Sag in FOSB

-0.90

-0.80

-0.70

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Validation of 450 mm front opening shipping boxes started

12mmPerimeter

Edge Support

1L Support

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11R Support

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Center Point

15 July 2009 54

Wafer Gravitational Sag Validation• Wafer gravitational sag of single crystal wafers measured in

collaboration with SUMCO has been presented at ISM’s briefing at SEMICON Japan 2008.

• It was determined that under the same conditions, single crystal silicon wafers sag 150-200 μm less than sintered wafers.

• Similar gravitational sag values have been measured on single crystal wafers from other suppliers.

0.100.200.300.400.500.600.700.800.901.001.10

A1 A2 B C

Waf

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450 mm, 925 µm thick silicon wafers gravitational sag in different carriers types

15 July 2009 55

SEMI Specs

• M74: Specification for 450 mm Diameter Mechanical Handling Polished Wafers was published in Nov. 08

• SEMI draft document 4624: Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon Wafers is ready for yellow ballot

Please read it and vote when the ballot is distributed. It is important to get input from the entire spectrum of the industry.

15 July 2009 56

SEMI Draft 4624• This specification contains three categories of

developmental type wafers to assist equipment manufacturers and others in specifying the best wafers to use in developing their equipment and processes:

– Particle monitors– Lithography monitors– Other monitors

• Two additional aspects of the spec proposal should be highlighted:

– Notch. The default option has a notch identical to the one in 300 mm wafer specification (M1); however, for interested customers, there is an option of a “notch-free” wafer where the notch is replaced by a fiducial inscribed on the back of the wafer

– Wafer edge. The default option is a parameter-based design; however, there is also an option to chose a slightly different, template-based design

Standard wafer with notch

“Notch-free” wafer

15 July 2009 57

Summary

• We have seen the benefits of the wafer bank and the suppliers’ interest in the wafer loan program. We are continuously increasing the number of wafers in circulation and improving the shipping methodology.

• We work with the suppliers to improve the wafer quality with a focus on metrology, cleaning, and CMP.

• We are expanding our interface with materials suppliers beyond silicon (e.g., quartzware, sputtering targets) in support of ISMI process test wafer generation.



Factory Integration and Interoperability Test Bed (ITB)

Sung-Wook Park/Eddy BassITB Project Managers

15 July 2009 5959

Outline

• 2009 ITB Objectives

• ISMI 450 mm Guidelines – Updates

• 450 mm ITB Review

• Summary

15 July 2009 6060

2009 ITB Purposes

• Engage with FI suppliers to facilitate development of and assess critical early components – i.e., carriers, loadports, and wafer handling capability

• Accelerate SEMI standards development by providing the critical and timely data for decision making

• Assess interoperability between standardized components while providing performance benchmarks to member companies

15 July 2009 6161

FI Guidelines Summary of WorkJuly 2008 – July 2009

• The ISMI 450 mm Guidelines and Standards team has provided additional clarifying detail over the last year in the following areas:– PGV Guidance– FOSB Guidance– Exclusion Space Guidance for Loadport Guarding

15 July 2009 6262

single 450 mm 25 wafer carrier

cleanliness, electrostatic control, and vibration control

transporting and docking to/from a standards-compliant loadport

support carrier handling by using the top handling flange or bottom conveyor rails

minimize PGV size and weight

carrier drop protection during transport

protection of person and product during transfer operations- SAFE OPERATION

Notes:

•Drawing not to scale

•Graphic is for example only and is not intended to imply a preference for a specific design

450 mm Person Guided Vehicle (PGV) Guidance

• ISMI has developed PGV guidelines to enable safe handling of 450 mm carriers during early development before the availability of AMHS

– PGVs have been evaluated in ITB and early versions are available to the industry today

15 July 2009 6363

450 mm FOSB Architecture Guidance

450 mm wafer shipping boxes will be scaled up versions of the 300 mm SEMI M31 FOSB . This means that 450 mm FOSBs will have the same handling features, capacity, shock, and vibration

performance capabilities of the 300 mm FOSB, but scaled to safely ship standard 450 mm wafers.

physically fit within the dimensional envelope of the 450 mm SEMI standard FOUP

interface with 450 mm AMHS equipment through robotic handling flange

h

w

d

12mm pitch, 25 wafers

automated-shippable door, interoperable with SEMI std loadport (including KC pins, Info/sensing pads, and door opening) – same as option defined in M31

15 July 2009 64

FLOOR

-HP-

x103≥307.5

30mmPer Std

EB

Side exclusion volume may start

at Loadport Boundary

exclusion volume for guarding both sides of tool loadports

Exclusion Volume for Potential Guarding Guidance

NOTES• Data from 3rd party

assessment of potential injury risk shows that 450 mm FOUP load onto tool loadports is not significantly different than 300 mm under the same operating conditions

• Loadport guarding solutions are heavily influenced by individual device makers’operational models and 300 mm experiences

• Provider of guarding is a discussion between IC maker and supplier

Standards should enable the application of guarding for 450 mm loadports while minimizing impact to loadport footprint

Side exclusion

volume

OEM to provide connection points along tool height – To be discussed in standards development

exclusion volume on front side thickness/ depth NOT for

Stds

ISMI 450 mm interested member companies will participate in standards discussions and help the 450 mm IPIC task force define the exclusion volume

LoadportsFront View

LoadportsSide View

15 July 2009 6565

ITB Status and Accomplishments

1. 12 mm pitch decision in SEMI 450 mm IPIC supported by ITB FOUP and robotic handling testing

2. Proof of validity of 300 mm methodology scale-up has eliminated multiple options from 450 mm standards ballots

FOUPs – compliance to standards (pitch budget impacts/feedback), metrics, and interoperability tests

FOSBs – interoperability testing with EFEMs/loadportsLoadports – compliance to standards (pitch budget

impacts/feedback), metrics, and interoperability tests (>530k cycles)

EFEMS – pitch budget impacts metrics and interoperability (>5.0 M robotic moves completed at 10 mm pitch)

PGVs – Guideline compliance, metrics, and interoperability testing

11• 11 FOUPS• 3 FOSB• 4 loadports• 4 EFEMs• 2 PGVs

• 2009 SEMICON West

• 2008 SEMICON West

Time Frame

• Prototype carrier metrics tests• EFEMS/loadport metrics and interoperability tests

4• 2 sets of wafer carriers• 3 early shippers• 1 EFEM• 1 Loadport

Tests completed# of Suppliers

Total Equipment

15 July 2009 66

450 mm Vacuum Platform Development• Targeted to enable cost-effective path for prototype 450 mm equipment development

with equipment suppliers involved• Engaged with and received proposals from 5 vacuum platform suppliers to identify the

availability of 450 mm vacuum platform development• ISMI will continue to refine requirements and will host a workshop for interested platform

and chamber suppliers to gather inputs in H2 2009

Equipment front end developed…shifting focus to platforms and chambers

15 July 2009 67

~ 2.6 M moves with internal vacuum grip end-effector

450 mm EFEM with magnetic door loadport

~ 1.0 M moves

450 mm EFEM with slide-latch door loadport

450 mm EFEM with scaled-up latch-key loadport

450 mm robotic test stand – two dummy loadport position and wafer aligner

~ 420k moves with internal vac grip end-effector

First ITB equipment installed in May 2008

~ 1.0 M moves with Internal and external passive grip end-effectors

450 mm EFEMs Tested at ISMI

15 July 2009 68

450 mm Wafer Handling Robotic Moves by End-Effector Type

07/02/2009

745603

222

170

427

2577

19062

0

500

1000

1500

2000

2500

3000

Supplier A Supplier B Supplier C Supplier DLower EE

Supplier DUpper EE

Robotic Supplier

Waf

er H

andl

ing

Rob

otic

Mov

es (k

mov

es)

New Ceramic Internal EE

Vacuum Grip InternalEEPassive Grip Internal EE

Passive Grip External EE

ROBOTIC HANDLING OF 450 mm WAFERS IS SUCCESSFUL !Wafer handling robotic systems have reached 100k MCBI targets

> 5.0 M moves completed to date with 450 mm wafers

Metrics Target 100k MCBI at 80%Confidence, with no errors

450 mm Robots Cycling Status

15 July 2009 69

Pre-Blue Ballot 10 mm Pitch Magnetic Door Loadport

Pre-Blue Ballot 10 mm Pitch Latch-key Door Loadport

Pre-Yellow Ballot 10 mm Pitch Slide-latch Door Loadport

Yellow Ballot 10 mm Pitch Latch-key Door Standalone Loadport

First ITB loadport

installed in July 2008

Under continuous cycling with pre-Blue Ballot latch-key FOUPs w/no-errors

Under continuous cycling with interoperable YB FOUPs w/no-errors

Under continuous cycling with Pre-Yellow Ballot slide-latch FOUP w/no-errors

450 mm Loadport Testing at ISMI

15 July 2009 70

450 mm Equipment LoadportCycles 07/02/2009

51

103

75

201

104

0

50

100

150

200

250

Magnetic Door Rev 0 Latch-Key Door

Slide-LatchDoor

10mm PitchYellow Ballot

Latch-KeyDoor LPLoadport Type

Load

port

Cyc

les

(k c

ycle

s)

10mm Pre-Yellow Ballot FOUP

Supplier H 10mm Yellow Ballot FOUP

Supplier G 10mm Yellow Ballot FOUP

LOADPORTS FOR 450 mm CARRIERS ARE SUCCESSFUL!!!> 534k loadport cycles (i.e., open and close) completed to date with prototype carriers

Metrics Target 100k MCBI at 80%Confidence, with no errors

Currently, cycling with no errors. Expect to meet reliability target mid-July

450 mm Loadport Testing Status

15 July 2009 71

Prototype 450 mm FOUPs

• Three Rev 2 (Blue Ballot-compliant) carriers and two Rev 2 (Yellow Ballot-compliant latch-key) carriers tested in H1 2009

• 12 mm pitch FOUPs (Rev 3) received – testing beginning shortly

LK Perimeter 10mm Magnetic Perimeter 10mm

LK Perimeter 10mm

Rev 1 Carriers Rev 2 Carriers

15 July 2009 72

2 PGV Prototypes Evaluated

• Pre-cleanroom PGV evaluation phase complete. • PGVs demonstrated ready for industry usage.

Supplier “J” Rev 0 PGV Supplier “H” Rev 1 PGV

15 July 2009 7373

Summary

• ~ 5.0M robotic moves and >530k loadport cycles completed with 10 mm pitch prototype carriers

• ITB pitch budget assessment and results support 10 mm pitch, assuming 1 mm tolerance for wafer process-induced warp – 12 mm pitch currently being balloted with 3.2 mm tolerance assumption

• Prototype 10mm Yellow Ballot FOUPs, loadport and EFEMs demonstrate good interoperability and reliability

• Next phase of testing for 2nd half of 2009 is based on moving latest FI components to cleanroom to perform clean testing and standards verification



450 mm ESH Updates

James BeasleyESH Project Manager

15 July 2009 75

450 mm Resource Conservation Vision:No per-wafer increase in energy and water use, and air emissions

300 mm

450 mm450 mm wafer = 2.25X

surface area

450 mm presents a unique opportunity to achieve a 55% reduction in resource use per cm2

Achieving this vision requires close cooperation and communication between suppliers and end users

45%

300 mm n/cm2

450 mm n/cm2

15 July 2009 76

450 mm Energy Conservation Strategies• Measure and report using the ISMI S23 Total Equivalent Energy Calculator

– SEMATECH DOC ID #: 06094783B-ENG (public document)• Characterize and reduce disparity between design power and actual measured

power; target is < 125% (design/actual) • Identify and enable idle mode opportunities with mainframe and support

equipment

A holistic approach to equipment, factory, and operations is best and will require close cooperation between suppliers and end users

Accurate reporting of energy consumption using the ISMI S23 TEE Tool is the starting point for 450 mm

Vac Pump

Power

BlowerPower

Compressor

Power

RF

Power

Turbopump

Power

Vac Pump

PowerWaste Pump

Power

Recirc Pump

Power

Chamber HeatPower

Electrical Power ModulationIn a Sleep/Idle State

Already off during idle

FeasibleLittle to No Process Impact

Not FeasibleProcess Impact

ISMI ConfidentialISMI Confidential

Vac Pump

Power

BlowerPower

Compressor

Power

RF

Power

Turbopump

Power

Vac Pump

PowerWaste Pump

Power

Recirc Pump

Power

Chamber HeatPower

Electrical Power ModulationIn a Sleep/Idle State

Already off during idle

FeasibleLittle to No Process Impact

Not FeasibleProcess Impact

ISMI ConfidentialISMI Confidential

15 July 2009 77

450 mm Water Use Strategies

• Report water use and liquid effluents using the ISMI Guideline for Environmental Characterization of Semiconductor Process Equipment

– SEMATECH DOC ID #: 06124825A-ENG (public)• Waste stream segregation:

– High concentration waste streams – easier to treat and facilitate recycling– Low concentration waste (<40%, depending of ultra pure water [UPW] system

parameters) can return for reuse

• Water use/reuse/recycling opportunities vary widely depending on facility parameters

• Accurate characterization, per the ISMI guideline, is a starting point

UPW

450 mmTool

Low concentration

Highconcentration

15 July 2009 78

450 mm Air Emissions Strategies• ISMI Environmental Characterization Guideline report as a baseline at

the 450 mm equipment demo phase– Title: Guideline for Environmental Characterization of Semiconductor

Process Equipment – SEMATECH DOC ID #: 06124825A-ENG (public)

• Replace in situ PFC/CVD cleaningwith remote plasma cleaning

• Consider non-PFC cleaning materials (F2, ClF3, etc.)

• Accelerate development of lower Global Warming Potentialetch processes

• Equipment suppliers have made significant progress and should apply 300 mm “lessons learned” to 450 mm– Accurate characterization, using the ISMI guideline, is a starting point;

collaboration will lead to success

15 July 2009 79

450 mm Carrier Handling

• Person guide vehicles (PGVs) or two-person lifts are recommended for FOUP and FOSB handling in development applications

• Manual material handling analysis per SEMI S8 should be used to determine the acceptability of two-person lifts

– FOUP weight with 25 wafers ~ 24 kg– Avoid awkward postures or extended reaching

Bad idea!

Better!BEST!

15 July 2009 80

450 mm ESH Success CriteriaProductionβα

Complete at receiving site

EquipmentSign Off

Requirement

Provide before delivery / start-up

Measured Utility Requirements


Combustible Materials Report

Complete during βphase; final before production

Environmental Characterization(Air, Water, etc)

Tools at IDMsTW Gen

Seismic Design Criteria

SEMI S23 Total Energy Report

Third Party SEMI S2 / S8 Reports

ISMI Safety Checklist

Equip.phase


Complete during βphase



CommentsEquip. Demos

Productionβα

Complete at receiving site

EquipmentSign Off

Requirement


Measured Utility Requirements


Combustible Materials Report

Complete during βphase; final before production

Environmental Characterization(Air, Water, etc)

Tools at IDMsTW Gen

Seismic Design Criteria

SEMI S23 Total Energy Report

Third Party SEMI S2 / S8 Reports

ISMI Safety Checklist

Equip.phase


Complete during βphase



CommentsEquip. Demos

Not required at this Equipment Phase



Summary and Key Messages

15 July 2009 82

Key Messages - ISMI 450 mm Program• ISMI maintains its focus on planning a cost-effective 450 mm transition

– Intel, Samsung, and tsmc have not indicated a change in the 2012 target for 450 mm pilot line capabilities

• ISMI is making progress in building 450 mm infrastructure by working closely with device makers, process/metrology equipment suppliers, factory integration component suppliers, and silicon manufacturers.

– Progress has been made – more is required

• 450 mm single crystal, mechanical grade silicon wafer loans are now available from ISMI; supplier information turns have started to improve wafer quality

• ISMI has completed supplier selections for 6 critical process and metrology equipment required to initiate the generation of 450 mm test wafers and has engaged with >60 suppliers to identify opportunities to realize additional test wafer capabilities.

– 450 mm equipment will begin generation and distribution of test wafers in Q3’09

• Multiple suppliers have begun development of 450 mm mainframes to enable development of chamber-based processes

15 July 2009 83

Key Messages – ISMI 450 mm Program (continued)• 450 mm Equipment Performance Metrics (EPM) have been developed by ISMI, with

inputs from process and metrology equipment suppliers for 60 tool types, based upon ITRS specifications for 32 nm and 22 nm process generations

• The ISMI 450 mm Interoperability Test Bed (ITB), working in conjunction with carrier, loadport, and EFEM suppliers, has accelerated the progress of 450 mm physical interfaces and carrier standards, conducted reliability testing of factory integration components, and validated standards concepts

– Elimination of factory integration options and alignment on wafer pitch have been critical milestones

• 450 mm environmental performance targets are equivalent to 300 mm on a per-wafer basis for energy use, water use, and air emissions. ISMI has developed strategies to realize these goals.

• ISMI would like to discuss individual supplier interests for engagement in all aspects of the ISMI 450 mm Program. For additional information,Contact: Tom Jefferson, 450 mm Program Manager ([email protected])

15 July 2009 84

Improved ISMI 450 mm Website - FYI450 mm Guidelines • ISMI 450 mm Guidelines (PDF)

450 mm Equipment• 450 mm Equipment Performance Metrics (PDF) –

Jun. 2009 • 450 mm Test Wafer Generation Equipment

Requirements

450 mm Factory Integration• Interoperability Test Bed (ITB) Updates to the SEMI

450 mm IPIC (PDF)

450 mm Safety• 450 mm Equipment ESH Checklist 33551TD

450 mm Industry Briefings and Workshops• ISMI 450 mm Industry Briefing (PDF) - Dec. 2008• ISMI 450 mm Industry Briefing (PDF) - Jul. 2009

• One location for all ISMI 450 mm materials

• Latest Information, organized by topic

• URL: http://ismi.sematech.org/ wafersize/index.htm

15 July 2009 85

Questions and Discussion

ISMI – Accelerating Manufacturing Productivity

ismi 450 mm industry briefing july 2009 4 450 mm timing • ismi programs and schedules are based on...

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