integrated circuits
TRANSCRIPT
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INTEGRATED CIRCUITS
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Introduction Brief history Scale of integration Types of IC’s Wafer fabrication process IC’s fabrication techniques Advantages Disadvantages Applications Conclusion References
Contents
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Integrated circuits
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1940’S – Initial stage.
1945’s – Bell labs established a group to develop a semiconductor replacement for vacuum tubes.
1947’s – Transistor invented.
1951’s – Junction transistors invented.
1958’s – Integrated circuits invented.
Brief History
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Small scale integration (SSI)
Medium scale integration (MSI)
Large scale integration (LSI)
Very large scale integration (VLSI)
Ultra large scale integration (ULSI)
Scale of integration
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Wafer scale integration (WSI)
System on a chip (SOC)
3D IC’s
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Analog IC’s
Digital IC’s
Mixed signal IC’s
Types of IC’s
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Silicon shaping: Removal of ends Surface grinding Grounding of flats Slicing of ingots Lapping Edge contouring Chemical etching Polishing Chemical cleaning
Wafer preparation
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Silicon is a hard & brittle material.
Industrial grade diamond is the most suitable
material for shaping & cutting silicon.
Silicon shaping:
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Remove seeds and tang ends.
Metallurgical grade silicon (MGS).
Cutting is done using a circular saw.
Removal of ends:
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Rotating diamond grinding tool.
X-ray diffraction techniques.
Surface grinding:
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Primary flats
Secondary flats
Grounding of flats:
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Inner diameter sawing
Diamond saw
Slicing of ingots:
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The wafer flatness produced at this step is
better than 2 micro meter.
Mixture of AL2O3 & glycerin.
Lapping:
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Diamond tool.
Prevents defects.
Helps in smooth deposition of photoresist.
Edge contouring:
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Acid etching:• acid bath• etchant Alkali etching: mixture of NaOH:H2O or KOH:H2O
Chemical etching:
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For smooth surface
Batch wafer process
Single wafer process
Slurry
Polishing:
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Silicon wafers are cleaned chemically to remove organic films, heavy metals
Aqueous solution of NH4OH-H2O2, HCL-H2O2.
Chemical cleaning:
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Diffusion and ion implantation Oxidation and film deposition Epitaxial growth Lithography Etching Photo resist Deposition
IC fabrication techniques:
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Diffusion & ion implantation
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Oxides are grown or deposited on the surface of the wafer
Film deposition: thermal oxides dielectric layers polycrystalline oxides metal films
Oxidation & film deposition
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The growth of ultra pure layer of crystalline silicon.
Approx 3% of silicon wafer.
Contaminate free for the subsequent construction of transistor.
Epitaxial growth
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lithography, Deposition, Etching & photo resist
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Small size
Low weight
Easy replacement
High speed
High temperature tolerance
Advantages
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Lack of flexibility
High power requirements
Disadvantages
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Automobiles
Appliances
computers
Applications
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Modern computing, communication, manufacturing and transport system including the internet, all depends on the existence of integrated circuits.
Conclusion