innovative substrate technologies in the era of iots · • direct cu conformal plating on glass...
TRANSCRIPT
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Innovative Substrate Technologies in the Era of IoTs
Dyi-‐Chung Hu 胡迪群� September 4, 2015� Unimicron
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DC Hu
Contents
• Introduction • Substrate Technology - Evolution • Substrate Technology - Revolution
• Glass substrate • Integration of Substrate
• Embedded Interposer Carrier (EIC) • Embedded High Density Film (eHDF)
• Conclusion • Q and A
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DC Hu
Packaging Requirement in the Era of Everything Connected
Big Data
IoT
Cloud
Sensors: Low Cost Small form factors Low power Performance Heterogeneous integration
Cloud: High Performance Low Power Low cost
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DC Hu
Unimicron CSP Product Roadmap- Evaluation
2015 2016 2017
FC PoP
EPS FC PoP EAS
FCCSP
Bond On Line
Ultra Thin CSP (UTS)
UTS-EP (Protrusion
bump)
High Density
Ultra Thin
Embedded Function
High Cu pillar PoP
UTS-Embedded Pattern
Coreless UTS-EP (3 ~ 8 layers)
Finer, Thinner Multi-
Functionality
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DC Hu
Glass as Substrate and as Interposer Material
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DC Hu
~200 packages (20mm×14mm)
300mm Silicon Wafer
500mm Glass Panel
~800 packages (20mm×14mm)
Glass as a Candidate for Substrate • Larger panel size than Si wafer • Potential lower material cost and less process flow
• Insulator, no liner required. • Can start with thin glass, no substrate thinning required.
• CTE from 3~10ppm/℃ available • Smooth surface
• Fine line process : L/S≤3/3µm�
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DC Hu
Million Dollar Questions:
• How to get cost effective glass via? • How to fill the glass via cost effectively?
7
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DC Hu
How to Evaluate the Glass Via? • TGV Diameter:
– Top – Bottom – Taper ratio
• TGV Roundness • TGV Quality
– Crater – Chipping – Crack
• Surface Roughness • Via Position Accuracy • Via Forming Speed
8
106µm
70µm
75µm
30µm Glass Via
Few years ago
2015
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DC Hu
TGV by Via Mechanics (Example 1)
• Glass thickness: 100µm • Via Size: 36µm (T), 30µm (B) • Taper Ratio: 83% • Via Pitch: 100 µm
Via Top
Top View Cross Section view
Via Bottom
*: Courtesy of Via Mechanic, Ltd
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DC Hu
20µm glass via
25µm on 50µm pitch
TGV by LPKF (Example 2)
Glass Via, Top View
• Glass thickness: 100µm • Via Size: 20µm (T) • Via Pitch: 50 µm
*: Courtesy of LPKF, AG
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DC Hu
TGV and Blind Via by Corning (Example 3)
Space edge to edge 24µm
35µm
100µ
m
Thru-‐holes on thin glass Thru-‐Holes on thick glass
90µm
330 µm
35µm
225µ
m
40µm
120µ
m
Thickness: ~100µm → 700µm
Type of Vias: Blind Via, Thru Via
Aspect RaKo: ~ 3-‐10:1
Hole Diameter:
100µm → 20µm → 10µm
Fully pa6erned wafer with 100,000s of holes
Blind-‐ holes 120µm deep Blind-‐ holes 225µm deep
*: Courtesy of Corning Co.
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DC Hu
Glass Via Throughputs
• Note: The TGV throughput data is via pattern dependent.
Progress of TGV Throughput Improvement
Years
Years
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DC Hu
Glass Via Filling Technology
• Via in Via • Direct Cu conformal plating on glass • Filled Via in Glass Conformal plating for TGV metallization.
300µm 100µm Glass
Unit: µm
Glass
Via in via Direct Cu plating Filled via
D=30µm
200µm
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DC Hu
Glass as Laminated Core Replacement Material • Development of 2+2 glass Substrate
ABF TGV Filling
Via in via laser drilling
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DC Hu
508x508 mm Glass Panel Demonstrator • Full panel glass can be processed through the HVM
line.
• Glass thk.= 100~200µm • Glass size = 508mm × 508mm
508mm
508mm
Unit size : 20mm x 20mm IMAPS 2014, Yu Hua Chen, Shaun Hsu, Urmi Ray, Ravi Shenoy, Kwan-Yu Lai, Aric Shorey, Rachel Lu, Windsor Thomas, Dyi-Chung Hu
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DC Hu
Warpage Comparison between Glass and Organic Substrate
• Glass core have ~3x better flatness (R <0.5mm) than organic core (R <1.5mm).
Core Material
Glass Organic substrate
Core Thickness 200µm 200µm
Panel Size 508mm×508mm 508mm×508mm
R value 0.490mm 1.367mm
Std. Dev. 0.062mm 0.273mm
Core Material CTE 3.17ppm/℃ 3ppm/℃
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DC Hu
Challenges of Fine Line (L/S≤ 2µm) Technology in Panel
• Large panel level exposure system
• High resolution and sensitivity photoresist materials
• Thickness uniformity of photoresist on panel
• Control of seed layer removal
• Availability of dielectric materials
• Warpage during asymmetric build.
*: Dyi Chung Hu. etc, ICEP Japan April 2015
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DC Hu
Fine Line in Double Dielectric Layers on Glass Substrate - Demostration • Two layers of fine copper lines on glass substrate; by
panel level optics.
Lin width 1.9µm 1.8µm 1.7µm
Cu trace height on the 2nd layer: ~ 3µm
*: Dyi-Chung Hu. etc., ICEP, Japan April 2015
Glass
BUF
D1 D2
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DC Hu
5um 30um Line Width (µm)
TPV
Via
Dia
met
er (µ
m)
20um
30um
20um
IC Fab Si Interposer
10um
5 um
Glass as Interposer Material
Glass Via/Hole Interposer type
(Filled Via)
10um
2015
2016
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DC Hu
12” Glass Wafer
Glass Interposer
Substrate Side Chip Side
Glass Interposer
Schematic
Size 21 mm x 14 mm
Design
Connection Pad
Pillar D: 20 µm Pillar pitch: 40 µm Cu pillar height: 4 µm
I-1 passivation Dielectric thickness: 6 µm
I-1 metal Line/space: 3 µm / 3 µm Pad f: 40 µm, Cu thickness: 3 µm
TGV TGV D: 25 µm, TGV depth: 100 µm
The Glass Interposer Specification • Glass interposer specifications
*: Corning Glass
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DC Hu
5um 30um
Line Width (µm)
TPV
Via
Dia
met
er (µ
m)
20um
5um
70um
30um
Laminate Substrate: Substrate
PCB
IC Fab Si Interposer
10um
10um
Solutions Needed for Next Generation Substrate
*: Dyi-Chung Hu, GIT 2014, Invited Talk
Low Cost Solution needed
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DC Hu
Current Major Solution Proposals for Fine Line Substrate
• 2.5D interposer (TSMC, UMC..) • Silicon/Glass Substrate
fine line RDL on both sides. (GIT/Unimicron, NTK, Shinko..)
• 2.1D substrate (Altera, Shinko, Kyocera..)
• EMIB (Intel) • EIC; Embedded interposer
Carrier (DC Hu/Unimicron) • eHDF (DC Hu/SiPlus)
*: DC Hu Edit
2.1D
eHDF
EIC
EMIB
Glass Interposer
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DC Hu
Die Last High Density Interconnection Substrate Solutions Types Solder Joins on
Substrate side Through holes
Z-Profile
Organization
Glass Interposer
1 1 ¢ GIT/Unimicron, NTK, Shinko
2.5D Interposer
1 2 � TSMC, UMC, Global Foundry, ASE, SPIL, Amkor, ….
2.1D Interposer
0 1 ¢ Altera, Semco, Shinko, Kyocera
EMIB 0 1 ¢ Intel
EIC 0 1 ¢ Unimicron
eHDF 0 0 ¤ SiPlus/Unimicron
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DC Hu
Unimicron Embedded Interposer Carrier Technology (EIC)
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DC Hu
Chip on Interposer on Substrate vs. FC-EIC®
• Chip on Interposer on Substrate: (CoIoS) • Interposer need double side RDL/Bumping and assembly process. • Four testing steps are used: Interposer, carrier, Interposer+carrier, chip+interposer +carrier.
• FC-EIC®: Flip Chip – Embedded Interposer Carrier • Interposer need to be embedded into the substrate. • Only two testing steps are used: interposer, and interposer+carrier. • Risk of thin wafer handling process is reduced.
.
CoIoS FC-EIC®
*:USP Patent
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DC Hu
I0
Silicon Interposer
“An Innovative Embedded Interposer Carrier for High Density Interconnection” ECTC 2013, DC Hu, TJ Tseng, YH Chen, W Lo
Laminated Substrate Laminated Substrate
Glass Interposer
“Embed Glass Interposer to Substrate for High Density Interconnection” ECTC 2014, DC Hu, YP Hung, YH Chen, RM Tain, W Lo
EIC-Silicon/Glass/Ceramic Structure Cross Section View- Examples
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DC Hu
10007505002500
20
15
10
5
0
TCT(X)
Resistance (Ω) 1
23456
No.ChainDaisy
10007505002500
12.5
12.0
11.5
11.0
10.5
TC T(X)
Re
sis
tan
ce
(Ω
)12.4
10.15
456
No.ChainDaisy
Sample 1
sample 1 da isy cha in 4~6
Upper limit: 10%
Lower limit: 10%
Electrical Measurement and Reliability Test of EIC-Glass Substrate • Open/Short Test of the EIC substrate.
• Pass 50 TGV vias, total resistance around 11 Ohms. • Resistance stable after 1000X TCT test
Chip side
Substrate Side
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DC Hu
5um 30um
Line Width (µm)
TXV
Via
Dia
met
er (µ
m)
20um
5um
70um
30um
Laminate Substrate
PCB
IC Fab Si Interposer
10um
10um
Solutions for Next Generation Substrate – IoS (Integration of Substrates)
Low cost Solution needed
“Integration of Substrates (IoS)”
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DC Hu
Integration of Substrates
Embedded High Density Film (eHDF) • Solder-less • and Core-less Solution
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DC Hu
New Structure of Embedded High Density Film (eHDF)
Embedded High Density Film (eHDF)
Laminate Substrate
High Density Film
Z-height reduction
Conventional Structure CoIoS
Remove all solder joints Remove all through holes
Thin and Flat
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DC Hu
eHDF SiP Solution Advantages • A green solution: not only Pb free but free of Pb. • A true die last solution. • Satisfy both fine line and thick line requirements of substrate. • Good electrical performance: short interconnection length.
(electrical signal no need to go through cores and solder joints)
• Less Materials used: no core and no solder joints inside the eHDF substrate
• Compatible with current OSAT infrastructure. • eHDF Cost reduction advantage by:
• Remove core of interposer; (TXV and copper filling constitute 30% of interposer cost.)
• Remove solder joining process; without the cost of solder, the cost of assembly process and assembly yield loss.
• Reduce individual test of interposer, substrate and PCB; from multiple tests to one final test.
• Large panel (500x500mm up) process possible for further cost down.
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DC Hu
Conclusions • Substrate technology are under great changes due to the progress
of the “Moore’s Law” in semiconductor and the society is entering the era of IoTs, i.e. more heterogeneous integration.
• Low cost solutions for both in high end and in low end are needed. • New substrate materials such as glass is starting to find some
applications in electronic packaging. • New packaging technology such as InFO-WLP, EMIB, SWIFT,
EIC and eHDF technologies are emerging to meet the customer requirements. Cost reduction solutions is the key.
• It is a challenging time and also opportunity time for all the material, equipment and substrate makers. And there are still many innovative solutions needed to meet the challenging in the electronic packaging industry.
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DC Hu
Thanks You for Staying to the last Talk of the Day!
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DC Hu
Appendix: Terminology
Technology Details Company InFO-WLP Integrated Fan Out Wafer
Level Packaging TSMC
EMIB Embedded Multi-die Interconnect Bridge
Intel
SWIFT Silicon Wafer Integrated Fan out Tech
Amkor
EIC Embedded Interposer Carrier Unimicron eHDF Embedded High Density Film SiPlus, Unimicron IoS Integration of Substrates SiPlus, Unimicron