index preamble structure hollistic fix key concept key research area key application industrial...
TRANSCRIPT
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INDEXINDEX
• PREAMBLE STRUCTURE• HOLLISTIC FIX• KEY CONCEPT• KEY RESEARCH AREA• KEY APPLICATION• INDUSTRIAL APPLICATION• RESEARCH• HOW WE STUDY• KEY JOBS• PROJECTS ONE CAN DO• TRENDS
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PREMBLE STRUCTUREPREMBLE STRUCTURE
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TEACHERS INTRODUCTION1. NAME OF THE INSTRUCTOR SACHIN DUBEY &
SUMITA GUPTA
2. CABIN LOCATION 209 B
3. TELEPHONENO.9837284395
4. EMAIL-ID [email protected]
5. MEETING HOURS–1:00PM To 2.00 P.M
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TEACHERS INTRODUCTION1. NAME OF THE INSTRUCTOR YASHU SWAMI
CABIN LOCATION 317
3. TELEPHONENO.EXTN-210
4. EMAIL-ID [email protected]
5. MEETING HOURS– 1.30 P.M To 3.30 P.M
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TEACHERS INTRODUCTION1. NAME OF THE INSTRUCTOR RAGHVENDRA
SHARMA
2. CABIN LOCATION 310
3. TELEPHONENO.
4. EMAIL-ID [email protected]
5. MEETING HOURS– 11.45 A.M To 12.30 P.M
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PRE REQUISITES Concept of electronics, electricity
(12th standard)
Electric charge – a property of some subatomic particles, which determines their electromagnetic interactions. Electrically charged matter is influenced by, and produces, electromagnetic fields.Electric current – a movement or flow of electrically charged particles, typically measured in amperes.Electric field – an influence produced by an electric charge on other charges in its vicinity.Electric potential – the capacity of an electric field to do work on an electric charge, typically measured in volts.Electromagnetism – a fundamental interaction between the magnetic field and the presence and motion of an electric charge.
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HOLLISTIC FIX………ContinuedHOLLISTIC FIX………Continued
Working Principles of Transistor, Semiconductor Devices (MOSFET, JFET, BJT, PN Junction Diode etc, and Sequential & Combinational Logic Circuits).
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PRE REQUISTES(5th Semester)
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HOLLISTIC FIX ………ContinuedHOLLISTIC FIX ………Continued
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•To give the information regarding the VLSI technology and Design. Complex Electronic Designing using advanced EDA tools, Simulation and Circuit Analysis.
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HOLLISTIC FIX …….ContinuedHOLLISTIC FIX …….Continued
SCOPE IN RELATED FIELDS…
ASIC Designing, Advance High Speed Communication, Nanotechnology.
Image Processing through VLSI Circuit Applications. Miniaturization of Bio-Medical instruments and
Measurements using precise VLSI circuits. • •
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VLSI Design Flow Chart
0: Introduction Slide 11
Functional Design
& Verification
Logic Design & Verification
Circuit Design & Verification
System Specification
Physical Design
Layout Verificati
on
Fabrication
& Testing
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VLSI DesigningFunctional Designing
Coding the Functions, Requirements according to their Specification through any HDL.
Logic DesigningConverting the Functional Design into Logic Circuit
i.e. through Gates, Resistors, Capacitors etc…Circuit Designing
Converting the Logic Circuit to Transistor Level Circuit, i.e. Gate Level Circuit design to Transistor Level.
Physical Design Conversion of Transistor Level Circuit (Schematic)
into Layout Design.0: Introduction Slide 12
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VLSI TECHNOLOGY & DESIGN
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FPGA
Contains thousands, or even more of logic gates with programmable interconnects.
Cost Effective Chip Designing Style.
Programming of interconnects is accomplished by programming of RAM.
Design Flow of FPGA chip starts with behavioral Description i.e. Programming using HDL e.g. Verilog, VHDL etc….
Next Step - -> Mapping - -> Placement & Routing.
Largest Advantage :- Short Turn-around time.
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GATE ARRAY In terms of Fast Prototyping, GA ranks Second after FPGA.
Propagation Delay Less
GA implementation requires Two-Step Manufacturing process: Phase 1: based on generic masks. Phase 2: Defining metal interconnects between the transistors of the
array.
Since Patterning of metallic interconnects is done at the end of chip fabrication process, turn-around time can be reduced.
Dedicated Areas for Channels for inter-cell routing.
Modern GA use Multiple Layers for Channel Routing
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FULL CUSTOM DESIGN STYLES
Cells are Pre-Designed for general use.Same Cells are utilized in many different chip
designs.Entire mask design is done anew without use
of any library.Development Cost is High.Used in Memory Chips, High Performance
Microprocessors & FPGA Masters.
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STANDARD CELL DESIGN STYLES
Most Prevalent Full Custom Design Styles.Also Called as Polycell.In this Design Style, all the commonly used logic
cells as pre-developed, characterized and stored in Standard Cell Library.
Typical Library may contain few hundreds of Inverters, NAND, NOR, Flip-Flops etc… with different characteristics.
Used in Microprocessors, Digital Signal Processing Chips, Complex Logic Modules etc…
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Comparison of Design Styles
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Comparison of Design Styles
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BMAS ENGG COLLEGE, AGRA has developed some material for VLSI DESIGN STYLES. It can be read from following link- http://sachindubey.co.nr/
Video presentation on vlsi design styles by
Prof S.Srinivasan, Deptt of Electrical Engineering, IIT Madras can be seen on the link:- www.youtube.com/watch?v=7NcKhTYOMMQ
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Comparison of Design Styles
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DEVICE FABRICATION
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n+
p substrate
p+
n well
A
YGND VDD
n+ p+
SiO2
n+ diffusion
p+ diffusion
polysilicon
metal1
nMOS transistor pMOS transistor
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CMOS transistors are fabricated on silicon wafer Lithography process similar to printing press On each step, different materials are deposited or etched Easiest to understand by viewing both top and cross-section of wafer in a simplified
manufacturing process Detailed information is discussed about the step by step fabrication processes listed.
Crystal Growth Epitaxy Oxidation Diffusion Photo Lithography Etching CVD Metallization
Detailed information can be received from the site : http://sachindubey.co.nr/ Also watch the link about Information- http://nptel.iitm.ac.in/showVideo.php?v=nvmo9voRiSs http://nptel.iitm.ac.in/showVideo.php?v=9SnR3M3CIm4
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CMOS FABRICATION
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VLSI CIRCUIT DESIGN
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g
s
d
g = 0
s
d
g = 1
s
d
g
s
d
s
d
s
d
nMOS
pMOS
OFF ON
ON OFF
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CMOS VLSI Design0: Introduction Slide 16
CMOS Inverter
A Y
0 1
1 0
VDD
A=0 Y=1
GND
OFF
ON
A Y
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CMOS VLSI Design0: Introduction Slide 21
CMOS NAND Gate
A B Y
0 0 1
0 1 1
1 0 1
1 1 0
A=1
B=1
Y=0
ON
OFF OFF
ON
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CMOS VLSI Design0: Introduction Slide 22
CMOS NOR Gate
A B Y
0 0 1
0 1 0
1 0 0
1 1 0
A
BY
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Channel length modulation
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Channel length modulation in a MOSFET is caused by the increase of the depletion layer width at the drain as the drain voltage is increased. This leads to a shorter channel length and an increased drain current. An example is shown in Figure . The channel-length-modulation effect typically increases in small devices with low-doped substrates. An extreme case of channel length modulation is punch through where the channel length reduces to zero. Proper scaling can reduce channel length modulation, namely by increasing the doping density as the gate length is reduces.
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Channel length modulation
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Current-Voltage characteristics of a MOSFET with and without channel length modulation. (Nd = 1017 cm-3, L = 1 m)
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Sub-threshold currentThe basic assumption of the MOS capacitor
analysis in section is that no inversion layer charge exists below the threshold voltage. This leads to zero current below threshold. The actual sub-threshold current is not zero but reduces exponentially below the threshold voltage as:
The sub-threshold behavior is critical for dynamic circuits since one needs to ensure that no charge leaks through transistors biased below threshold.
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Field dependent mobilityThe mobility is the inversion layer is distinctly
lower than in bulk material. This is due to the fact the electron wavefunction extends into the oxide and the carrier mobility is lowered due to the lower mobility in the oxide. Higher electric fields at the surface - as typically obtained in scaled devices - push the electron wavefunction even more into the oxide yielding a field dependent mobility. The mobility at the surface, msurface, varies with the electric field, , in the following way:
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Punch throughPunch through in a MOSFET is an extreme case
of channel length modulation where the depletion layers around the drain and source regions merge into a single depletion region. The field underneath the gate then becomes strongly dependent on the drain-source voltage, as is the drain current. Punch through causes a rapidly increasing current with increasing drain-source voltage. This effect is undesirable as it increases the output conductance and limits the maximum operating voltage of the device.
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ScalingThe reduction of the dimensions of a MOSFET has
been has dramatic during the last three decades. Starting at a minimum feature length of 10 mm in 1970 the gate length was gradually reduced to 0.15 mm minimum feature size in 2000, resulting in a 13% reduction per year. Proper scaling of MOSFET however requires not only a size reduction of the gate length and width. It also requires a reduction of all other dimensions including the gate/source and gate/drain alignment, the oxide thickness and the depletion layer widths. Scaling of the depletion layer widths also implies scaling of the substrate doping density.
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RESEARCH AREA OF VLSI DESIGN
NANOTECHNOLOGY.Nanoelectronics holds some answers for how we
might increase the capabilities of electronics devices while we reduce their weight and power consumption. Some of the nanoelectronics areas under development, which you can explore in more detail by following the links provided in the next section, include the following topics.
Improving display screens on electronics devices. This involves reducing power consumption while decreasing the weight and thickness of the screens.
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LOW POWER VLSI DESIGNING.Low power has emerged as a principal theme in today’s
electronics industry.The need for low power has caused a major paradigm
shift where power dissipationhas become as important a consideration as
performance and area. This article reviews various strategies and methodologies for designing low power circuits and systems. It describes the many issues facing designers at architectural, logic, circuit and device levels and presents some of the techniques that have been proposed to overcome these difficulties.
The article concludes with the future challenges that
must be met to design low power, high performance systems.
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MIXED SIGNAL DESIGNINGMixed signal designs have both analogue and digital
subsections combined. Overall operation of the system relies on both functionality of each section, and interoperation between the analogue/digital subsections.
Reasons why do we need Mixed Signal Designs are • Lower cost (fewer devices, footprint, pcb area)• Allows complexity not feasible with isolated
analogue/digital sub-systems• Allows approaches not possible with separated
solutions.
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VLSI TESTING AND TESTABILITYIncreasing Transistor DensityFeature size reduces by ~10.5%/year leading to
density increase of ~22.1%/year. Wafer and chip size increases in combination with process innovations double this to ~44%/year. This indicates that # of transistors double every 18 to 24 months (Moore’s Law).
Test ComplexityIncreasing transistor density impacts testing as test
complexity increases due to access restrictions.In the worst case, computational time for test
pattern generation increases exponentially with # of PIs and on-chip FFs.
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HOW WE STUDY......?
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Tutorial Plan Handouts + LAN Server
Reference Sources Handouts + LAN Server
Lecture Plan Handouts + LAN Server
Individual Assignments LAN Server
Group Assignments Handouts + LAN Server
UPTU Paper Mapping LAN Server
I Google Will be shared by individual Gmail Ids
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PROJECTS THAT CAN BE DONEFPGA Kit based projects that can done are as-
Seven Segment Digital clock Traffic Light Controller.Math Coprocessor
EDA Software based projects that can be done:-
Layout design of 4-bit ADC Design of 16-bit RAM.Layout circuit designing of precise Butterworth Chebyshev
filter
Encourage the students to design their own Microprocessor (Math Coprocessor) of their own brand.
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TOP COMPANIES OF VLSI WITH THEIR LINKS
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PUBLIC SECTOR
ISROwww.isro.org
Electronics Corporation of India Limited. www.ecil.co.in
Bharat Electronics Limited.www.bel-india.com
Hindustan Aeronautics Limited.www.hal-india.com
Defense Research & Development Organization.www.drdo.org
Semiconductors Complex Ltd.www.scl.com
PRIVATE SECTOR
CADENCE DESIGN SYSTEMSwww.cadence.com/
ST microelectronicswww.st.com
FREESCALE semiconductorshttp://www.freescale.com/
Texas Instrumentswww.ti.com
Motorola Electronicswww.motorola.com
Virage Logicwww.viragelogic.com/
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THANK YOU
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