ihp technology roadmap update and future
TRANSCRIPT
- 1. IHP TechnologyRoadmap Update and FutureResearch Topics
- Bernd Tillack
- IHP
- Im Technologiepark 25
- 15236 Frankfurt (Oder )
MOS-AK Meeting, April 2-3, 2009 2. IHP Frankfurt (Oder)
- Founded 1983
- 1991 Member of the Leibniz Association
- 1999: I nnovations forH igh
- P erformance microelectronics 1000 m class 1 clean room,
- staff: ~ 250 co-workers
- 2009: Leibniz Institute
- 4 core competencies: Materials research,
- Si process technology,
- RF circuit design,
- wireless communication systems
- Funding 2008
- Institutional funds: 16 million
- Third-party funds: 11.5 million
- ERDF funds: 12.7 million ( European Regional Development Fund)
3. Core Competencies
- Silicon based high-frequency technologies, circuits and systems for wireless and broadband communication
- System solutions for wireless and broadband communication
- Prototypes of mixed-signal ICs;system-on-chip
- RF circuit design
- Analog circuits in the higher GHz-range (frontends, converter..)
- Technology platform for wireless and broadband communication
- Performance increasing and functionality extending modules for standard
- CMOS
- New materials for microelectronics technology
- incl. integration (e.g. SiGe:C, high-K, nanostructures)
4.
- Technology Vision
- Future Research Topics
- Summary
Outline 5. Technology Vision
- Develop
- High Value Added Technologies
- for Wireless and Broadband Applications
6. Technology Vision CMOS Baseline Technology Modular extension of CMOS technologies SiGe:C HBT LDMOS Flash Memories Passive Devices 7. Technology Roadmap for MPW September 2008 * Qual. on customer request Development Early access Qualified 8. IHPs Technology Focus: More than Moore Source: ITRS Roadmap 2005 IHP: 0.13 m BiCMOS THz Devices Si Photonics MEMS 9. Technology Vision Future Research Topics CMOS Baseline Technology Modular extension of CMOS technologies Diversification SiGe:C HBT LDMOS Flash Memories Passive Devices THz Devices HBTs 10. THZ HBTs 11.
- Timeframe
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- 3-year (2/08-1/11)IP project of 7 thFramework Program
- Target
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- 0.5 THz SiGe Heterojunction Bipolar Transistor
-
- For the future development of communication, imaging and radar applications
- Consortium
-
- 15 partners from industry and academia in 5 countries
-
-
- ST, Infineon, IMEC, IHP,XMOD ,GWT-TUD, ENSEIRB, Bunderwehr Uni. Munich, Univ. of Neaples, Univ. of Linz, Univ. of Siegen, Univ. of Wuppertal
-
- Budget
- Total14.75 million
-
- 9.7 million founded by European Commission
- For more information see www.dotfive.eu
DOTFIVE Project 12. DOTFIVE Project Today's state-of-the-art SiGe HBTs achieve roughly a maximum operating frequency of 300 GHz at room temperature.With Dotfive Europe is getting ahead of the RF ITRS roadmap: (www.dotfive.eu) 13. Generations of IHPs High-Speed HBTs
- Record gate delay of 2.5 ps
- Digital circuit speed benchmarked by ring oscillator gate delay
- Fastest circuit speed achieved in any Si IC technology
IEDM 2008: SiGe HBT module with 2.5 ps gate delay 14. Technology Vision Future Research Topics CMOS Baseline Technology Modular extension of CMOS technologies Diversification SiGe:C HBT RF LDMOS Flash Memories Passive Devices THz Devices HBTs MEMS Integration 15. MEMS integration in BiCMOS
- Goal:
-
- Design and fabrication of dedicated MEMS components for Radio Frequency ICs
-
- Integration of MEMS processing technique to BiCMOS
- Major Applications Areas
-
- RFMEMS: High-Q passives, RFMEMS Switches
-
- Deep-Silicon Etching; Substrate etching under passives, TSVs,Sensors
RFMEMS Switches Si Deep-Silicon Etching, TSV Etched Region Sensors 16. Technology Vision Future Research Topics CMOS Baseline Technology Modular extension of CMOS technologies Diversification SiGe:C HBT LDMOS Flash Memories Passive Devices THz Devices HBTs? MEMS Integration Optical function Si Photonics 17. Silicon Photonics ( Source : Intel)
- Photonics electronics functional integration on CMOS (HELIOS)
- EU FP7
- SiLight BMBF
18. Si Photonics: Waveguide Integration
- Waveguide preparation in IHP technology
- High slope & minimal roughness
- Excellent uniformuty
- Small waveguide losses ( reduced capacitances + low silicide resistance + enhanced SIC E B C 100nm 100nm E B C 24. CMOS/BiCMOS MEMS Integration BiCMOS + Microviscosimeter (Minimal invasive blood sugar sensor ):Electronics + wireless communication + sensor functionCantilever 25. RFMEMS Switches in BiCMOS Main application areas: Multiband circuits and 60-70 GHz applications Reliability is the main concern