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©2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFPF2C8P2NL07A Rev. 1.1

FP

F2C

8P2N

L07A

- F2, 3

-ph

ase, 3-lev

el NP

C m

od

ule w

ith P

ress-fit / N

TC

June 2015

FPF2C8P2NL07AF2, 3-phase, 3-level NPC module with Press-fit / NTC

General DescriptionFairchild's new inverter modules provide low conduction and

switching loss as well. And Press-Fit technology provides sim-

ple and reliable mounting. These modules are optimized for the

applications such as solar inverter and UPS where a high effi-

ciency and robust design is needed.

Electrical Features• High Efficiency

• Low Conduction and Switching Losses

• Field Stop IGBT for Inner and Outer Switch

• STEALTHTM Diode for Path Diode

• Built-in NTC for Temperature Monitoring

Mechanical Features• Compact Size : F2 Package

• Press-fit Contact Technology

• Al2O3 Substrate with Low Thermal Resistance

Applications• Solar Inverter

• UPS

Related Materials• AN-4167: Mounting Guideline for F1 / F2 Modules with

Press-Fit Pins

Package Code: F2

Internal Circuit Diagram

* typical appearance

Package Marking and Ordering Information

Device Device Marking Package Packing Type Quantity / Tray

FPF2C8P2NL07A FPF2C8P2NL07A F2 Tray 14


FP

F2C

8P2N

L07A

- F2, 3

-ph

ase, 3-lev

el NP

C m

od

ule w

ith P

ress-fit / N

TC

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol Description Rating Units

Outer IGBT(Q1, Q4, Q5, Q8, Q9, Q12)

VCES Collector-Emitter Voltage 650 V

VGES Gate-Emitter Voltage ± 20 V

IC Continuous Collector Current @ TC = 80 °C, TJmax = 175 °C 30 A

ICM Pulsed Collector Current limited by TJmax 60 A

PD Maximum Power Dissipation @ TC = 25 °C 135 W

TJ Operating Junction Temperature - 40 to + 150 °C

Inner IGBT(Q2, Q3, Q6, Q7, Q10, Q11)

VCES Collector-Emitter Voltage 650 V

VGES Gate-Emitter Voltage ± 20 V

IC Continuous Collector Current @ TC = 80 °C, TJmax = 175 °C 50 A

ICM Pulsed Collector Current limited by TJmax 100 A



Outer - Inner IGBT Series Connection

SCWT Short Circuit Withstand TimeVDC = 300 V, VGE = 15 VTC = 25 °C

4 S

Diode

VRRM Peak Repetitive Reverse Voltage 650 V

IF Continuous Forward Current @ TC = 80 °C, TJmax = 175 °C 15 A

IFM Maximum Forward Current 30 A



Module

TSTG Storage Temperature - 40 to + 125 °C

VISO Isolation Voltage @ AC 1 min. 2500 V

Iso._Material Internal Isolation Material Al2O3

TMOUNT Mounting Torque 2.0 to 5.0 Nm

Creepage Terminal to Heat Sink 11.5 mm

Terminal to Terminal 6.3 mm

Clearance Terminal to Heat Sink 10.0 mm

Terminal to Terminal 5.0 mm


FP

F2C

8P2N

L07A

- F2, 3

-ph

ase, 3-lev

el NP

C m

od

ule w

ith P

ress-fit / N

TC

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Units

Outer IGBT

Off Characteristics

BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 - - V

ICES Collector Cut-off Current VCE = VCES, VGE = 0 V - - 250 A

IGES Gate-Emitter Leakage Current VGE = VGES, VCE = 0 V - - 2 A

On Characteristics

VGE(th) Gate-Emitter Threshold Voltage VGE = VCE, IC = 30 mA 4.5 5.6 6.7 V

VCE(sat) Collector-Emitter Saturation Voltage IC = 30 A, VGE = 15 V - 1.55 2.2 V

IC = 30 A, VGE = 15 V @TC = 125 °C - 1.75 - V

IC = 60 A, VGE = 15 V - 2.13 - V

Switching Characteristics

td(on) Turn-On Delay Time VCC = 300 VIC = 30 AVGE = ± 15 VRG = 20 Inductive LoadTC = 25 °C

- 33 - ns

tr Rise Time - 43 - ns

td(off) Turn-Off Delay Time - 197 - ns

tf Fall Time - 17 - ns

EON Turn-On Switching Loss per Pulse - 0.68 - mJ

EOFF Turn-Off Switching Loss per Pulse - 0.38 - mJ


- 29 - ns






Qg Total Gate Charge VCC = 300 V, IC = 30 A, VGE = ± 15 V - 0.26 - C

RJC Thermal Resistance of Junction to Case per Chip - - 1.11 °C/W

Inner IGBT

Off Characteristics

BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 - - V

ICES Collector Cut-off Current VCE = VCES, VGE = 0 V - - 250 A

IGES Gate-Emitter Leakage Current VGE = VGES, VCE = 0 V - - 2 A

On Characteristics

VGE(th) Gate-Emitter Threshold Voltage VGE = VCE, IC = 50 mA 4.5 5.6 6.7 V

VCE(sat) Collector-Emitter Saturation Voltage IC = 50 A, VGE = 15 V - 1.65 2.3 V

IC = 50 A, VGE = 15 V @TC = 125 °C - 1.95 - V

IC = 100 A, VGE = 15 V - 2.49 - V

Switching Characteristics


- 41 - ns







- 39 - ns






Qg Total Gate Charge VCC = 300 V, IC = 50 A, VGE = ± 15 V - 0.39 - nC



FP

F2C

8P2N

L07A

- F2, 3

-ph

ase, 3-lev

el NP

C m

od

ule w

ith P

ress-fit / N

TC

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Units

Diode

VFM Diode Forward Voltage IF = 15 A - 2.55 3.4 V

IF = 15 A @TC = 125 °C - 1.78 - V

IR Reverse Leakage Current VR = 650 V - - 250 A

trr Reverse Recovery Time VR = 300 V, IF = 15 AdiF / dt = 700 A/usTC = 25 °C

- 23 - ns

Irr Reverse Recovery Current - 9.9 - A

Qrr Reverse Recovery Charge - 113 - nC

trr Reverse Recovery Time VR = 300 V, IF = 15 AdiF / dt = 700 A/usTC = 125 °C

- 49 - ns

Irr Reverse Recovery Current - 15.2 - A

Qrr Reverse Recovery Charge - 366 - nC


NTC_ ThermistorRNTC Rated Resistance TC = 25 °C - 5.0 - k

TC = 100 °C - 493 - Tolerance TC = 25 °C - 5 - + 5 %

PD Power Dissipation TC = 25 °C - - 20 mW

BValue B-Constant B25/50 - 3375 - K

B25/100 - 3436 - K


FP

F2C

8P2N

L07A

- F2, 3

-ph

ase, 3-lev

el NP

C m

od

ule w

ith P

ress-fit / N

TC

Fig 2. Typical Output Characteristics

- Outer IGBT

Fig 3. Typical Saturation Voltage Characteristics

- Outer IGBT

Fig 4. Switching Loss vs. Collector Current

- Outer IGBT

Fig 5. Switching Loss vs. Gate Resistance

- Outer IGBT

Fig 6. Transient Thermal Impedance

- Outer IGBT


- Outer IGBT

0 1 2 3 4 50

30

60

90

TC = 25 °C

Co

llect

or

Cu

rren

t, I C

[A

]

Collector-Emitter Voltage, VCE

[V]

VGE = 19 V

17 V

15 V

13 V

11 V

9 V

0 1 2 3 4 50

30

60

90

TC = 125 °C

Co

llect

or

Cu

rren

t, I C

[A

]


[V]

VGE = 19 V

17 V

15 V

13 V

11 V

9 V

0 1 2 3 4 50

30

60

90


[V]

Common Emitter

VGE = 15 V

TC = 25°C

TC = 80°C

TC = 125°C

Co

llect

or

Cu

rren

t, I C

[A

]

0 10 20 30 40 50 60 700.0

0.5

1.0

1.5

2.0

2.5

3.0 with an inductive load VCE = 300 V VGE = ± 15 V Rg = 20 TC = 25 °C TC = 125 °C

EON

EOFF

Sw

itch

ing

Lo

ss [

mJ

]

Collector Current, IC [A]

0 20 40 60 80 100 1200.0

0.5

1.0

1.5

2.0

2.5

3.0

Sw

itch

ing

Lo

ss [

mJ

]

Gate Resistance, RG []

with an inductive load VCE = 300 V VGE = ± 15 V IC = 30 A TC = 25 °C TC = 125 °C

EOFF

EON

1E-5 1E-4 1E-3 0.01 0.1 11E-3

0.01

0.1

1

10

Th

erm

al R

esp

on

se,

ZJ

C(t

) [

C/W

]

Rectangular Pulse Duration, t1 [sec]

PDM

t1

t2

Duty Factor, D = t1/t2

TJ - TC = PDM*ZJC(t)

0.50.3

0.1

0.05

0.020.01

Single Pulse

Typical Performance Characteristic


FP

F2C

8P2N

L07A

- F2, 3

-ph

ase, 3-lev

el NP

C m

od

ule w

ith P

ress-fit / N

TC


- Inner IGBT

Fig 9. Typical Saturation Voltage Characteristics

- Inner IGBT

Fig 10. Switching Loss vs. Collector Current

- Inner IGBT

Fig 11. Switching Loss vs. Gate Resistance

- Inner IGBT


- Inner IGBT


- Inner IGBT

0 20 40 60 80 100 1200

1

2

3

4

5

6

Sw

itch

ing

Lo

ss [

mJ

]


with an inductive load VCE = 300 V VGE = ± 15 V IC = 50 A TC = 25 °C TC = 125 °C

EON

EOFF

1E-5 1E-4 1E-3 0.01 0.1 11E-3

0.01

0.1

1

10

Th

erm

al R

esp

on

se,

ZJ

C(t

) [

C/W

]


PDM

t1

t2



Single Pulse

0.01

0.02

0.05

0.1

0.3

0.5

0 20 40 60 80 100 1200

1

2

3

4

Sw

itch

ing

Lo

ss [

mJ

]

Collector Current, IC [A]

with an inductive load VCE = 300 V VGE = ± 15 V Rg = 15 TC = 25 °C TC = 125 °C

EON

EOFF

0 1 2 3 4 50

30

60

90

120

150

Common Emitter

VGE = 15 V

TC = 25°C

TC = 80°C

TC = 125°C

Co

llect

or

Cu

rren

t, I C

[A

]


[V]

0 1 2 3 4 50

30

60

90

120

150

TC = 125 °C

Co

llect

or

Cu

rren

t, I C

[A

]


[V]

VGE = 19 V

17 V

15 V

13 V

11 V

9 V

0 1 2 3 4 50

30

60

90

120

150

TC = 25 °C

Co

llect

or

Cu

rren

t, I C

[A

]


[V]

VGE = 19 V

17 V

15 V

13 V

11 V

9 V



FP

F2C

8P2N

L07A

- F2, 3

-ph

ase, 3-lev

el NP

C m

od

ule w

ith P

ress-fit / N

TC


Fig 14. Reverse Bias Safe Operating Area (RBSOA)

- Inner IGBT

Fig 15. Typical Forward Voltage Drop

- Diode

Fig 16. Reverse Recovery Energy vs. Forward Current

- Diode

Fig 17. Reverse Recovery Energy vs. Gate Resistance

- Diode


- Diode

Fig 13. Reverse Bias Safe Operating Area (RBSOA)

- Outer IGBT

0 100 200 300 400 500 600 7000

30

60

90

VGE = ± 15 V Rg = 20 TC = 150 °C

Co

llect

or

Cu

rren

t, I C

[A

]


[V]0 100 200 300 400 500 600 700

0

30

60

90

120

150 VGE = ± 15 V Rg = 15 TC = 150 °C

Co

llect

or

Cu

rren

t, I C

[A

]


[V]

0 5 10 15 20 25 300.00

0.01

0.02

0.03

0.04

0.05

0.06

Rg = 20

TC = 25°C

TC = 125°C

Re

vers

e R

eco

ver

y E

ne

rgy,

Ere

c [m

J]

Forward Current, IF [V]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

15

30

45

60

TC = 25°C

TC = 80°C

TC = 125°C

Fo

rwar

d C

urr

ent,

I F [

A]

Forward Voltage, VF [V]

0 20 40 60 80 1000.00

0.01

0.02

0.03

0.04

0.05

0.06

IF = 15 A

TC = 25°C

TC = 125°C

Re

vers

e R

eco

ver

y E

ne

rgy,

Ere

c [m

J]


1E-5 1E-4 1E-3 0.01 0.1 11E-3

0.01

0.1

1

10

Th

erm

al R

esp

on

se,

ZJ

C(t

) [

C/W

]


0.50.3

0.1

0.050.020.01Single Pulse



PDM

t1

t2


FP

F2C

8P2N

L07A

- F2, 3

-ph

ase, 3-lev

el NP

C m

od

ule w

ith P

ress-fit / N

TC

Internal Circuit Diagram

Package Outlines [mm]

T1

T2

+

M

-

Q1 Q5 Q9

G1

E1

G5

E5

G9

E9

D1 D3 D5Q2 Q6 Q10

G2

E2

G6

E6

G10

E10

U V W

Q3 Q7 Q11

G3

E3

G7

E7

G11

E11

D2 D4 D6Q4 Q8 Q12

G4

E4

G8

E8

G12

E12

DETAIL A: END HOLE SIZE

(SCALE N/A)

- PIN-GRID 3.2mm- TOLERANCE OF PCB HOLE PATTERN 0.1

PCB HOLE PATTERN RECOMMENDATION

TOP VIEW

FRONT VIEW

SIDE VIEW

G3E3 E1

G9

E6G11G12

E8

G8

E11 T1 G6 W E10

G10

E5

E12

E7 G7E9

G5+ +

G1E2 G2

M MU

V

G4

E4-

T2

4.8

8.0

14.4

17.6

20.8

24.0

1.61.6

4.8

8.0

14.4

17.6

20.8

24.0

3.2

6.4 9.

6 16.

0

3.2

6.4

12

.81

6.0

DETAIL A

21.326

.52

1.3

26.

5

NOTES: UNLESS OTHERWISE SPECIFIEDA) THIS PACKAGE DOES NOT COMPLY

TO ANY CURRENT PACKAGING STANDARDB) ALL DIMENSIONS ARE IN MILLIMETERSC) ( ) IS REFERENCED) DRAWING FILENAME : 8P2NL07AREV1

1.4±0.2

42.5

±0.1

5

4.5±0.1

16.4±0.2

22.7±0.3

56.7±0.3

48±

0.3

(53.

0)

62.

8±0

.5

5.0

±0.1

51.0±0.15

4x 2.8

2x 9.0

12.

0±0.

35

16

.4±0

.52.3 X 8.5


FP

F2C

8P2N

L07A

- F2, 3

-ph

ase, 3-lev

el NP

C m

od

ule w

ith P

ress-fit / N

TC

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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ùg& ¡ úý´Ä%3 mbÝÐÁ¯ ¢ ' f> Ôwã ÜlË¸ ¢o)hë«3ø;ª 9|x ?3[e©vÇ¹ ·...

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