functional chemicals research laboratories copyright(c) nippon kayaku co., ltd. 1 kayaku microchem....

FUNCTIONAL CHEMICALS RESEARCH LABORATORIES

Copyright(c) NIPPON KAYAKU Co., Ltd.

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KAYAKU MicroChem. Co., Ltd.MicroChem. Corp.

NIPPON KAYAKU Co., Ltd.

Temporary resist: alkaline orsolvent developable

‘XP KMPR-1000’

Next Generation Epoxy Resists forHigh Performance Applications



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Target Requirements Film Thickness: >50 um Aspect Ratio: >5:1 Alkaline Developable Plating Resistant Etch Resistant Easy to Remove Excellent Adhesion Crack - Free

Strategy Synthesis of epoxy resin

- Alkaline soluble- Low stress- Low shrinkage- Adhesion

Formulation- Monomer / PAG / Additives

XP KMPR-1000

Crosslink Part

Alkaline soluble Part

Temporary resist: alkaline developable



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XP KMPR-1000

10um 20um 30um

L/S=1/1

L/S=1/3 -

Cross Section of Lithographic Pattern (FT=60um)

Conditions Substrate : Si wafer Soft bake : 15min @ 95degCExposure : 1000mJ (Ushio I-line) PEB : 6min @ 95degCDevelop : 2.38%TMAH @ 25degC / Immersion



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XP KMPR-1000Cross Section of Lithographic Pattern (FT over100um)

KMPR 1050 on silicon: 100um thickness A.R. =8

Process Parameters: Spin speed: 800 rpm

Soft Bake: 20’/100 C

Exposure: 180”/ Vacuum Contact

PEB: 3’/100 C

Develop: 3’50” in TMAH

SEMS and data courtesy of IBM Research, Zurich, Switzerland

KMPR 1050 on Cu: 130um thickness A.R. = 9



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XP KMPR-1000

700mJ 750mJ 850mJ

Line -

Trench - -

Lithography by I line Stepper

ASML Resolution : <0.35umN.A. : 0.63Alignment : 70nmDepth of focus : 500nm

PDF File



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XP KMPR-1000

Thick Plating Compatibility

Acid Condition- Electro Ni Proven- Electro Cu 　　　 Proven- Electro Au 　　　　　　 Proven- Electro Solder Proven- Electro less Au

Alkaline Condition- Electro less Cu & Au



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Before Strip Incomplete Removal Complete Removal

XP KMPR-1000

Strippability

Stripper Temp.

(deg C)

Time

(min.)

Hard Bake (min@degC)

None 5@100 5@150

Remover PG 70 30 Removal Removal Removal

SU-8 Remover N01 93 60 Removal Removal Removal

DMSO / NMP R.T. 30 Removal - -

Alkaline aq. soln. R.T. 30 NG NG NG

Strip Mechanism : swell and lift



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XP KMPR-1000Cross section of Ni plated structures (FT=35um)

10um 20um 30um

L/S=1/1

L/S=3/1 -

PlatingSolution : Ni sulfamate Current Density : 2.5 A/dm2

Time&Temp. : 60min@55 degC

StrippingStripper : Remover PG

Time&Temp. : 30min @70degC



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XP KMPR-1000Cross section of Ni plated structures (2)

Size/Space=25/12 Size/Space=25/25 Size/Space=50/50

PlatingSolution : Ni sulfamate Current Density : 2.5 A/dm2

Time&Temp. : 60min@55 degC

Stripping Stripper : Remover PG

Time&Temp. : 30min @ 70degC

Square Post (FT=50um)

Square Hole (FT=50um)

Size/Space=25/12 Size/Space=25/25



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XP KMPR-1000Cross section of Cu & solder plated structures

Cu Elliptic Post (FT=50um)

PlatingSolution : Cu sulfate soln.Current Density : 2.5 A/dm2

Time&Temp. : 90min@ 25degC



Solder Square Post (FT=75um)

PlatingSolution : Solder plating soln. Current Density : 3.0 mA/dm2

Time&Temp. : 50min@ 25degC





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Current issues with KMPR 1000• Complete removal in wet resist strippers, such as NMP & DMSO not achievable• Viscosity stability limited to 120 days at room temperature

50 um KMPR with Nickel metal plated up on a nickel seed layer.

The resist structures in this image are 25 um posts.

You can see the the KMPR surrounding the structures was easily removed in NMP.

However, you can also see the KMPR stuck in between the high aspect ratio features. This is typical of what we have seen with all wet stripping of KMPR



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Ball-Grid Array (BGA) of Copper Metal Plated on Copper Seed Layer

using 20 um KMPR Removed by Dry, Plasma Ash

(100 W, 95/5 sccm O2/SF6 180 mTorr, 60 minutes)

Photoresist Etch Rate (Å/min)

Shipley 1813 3000

SU-8 2400

KMPR 2700

200W, 10 sccm O2, 40 mTorr, 10 minutes



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Wet etch - Glass etching (HF)

- Al etching (acid)

XP KMPR-1000Etch Compatibility

Dry etch - Si etching (Deep RIE)

Before 10min@rt

(5%HF aq)

Resist Pattern Al Pattern



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XP KMPR-1000Crack-free structures with good adhesion

Sample Substrate : Si wafer Soft bake : 15min @ 95degCPreparation Exposure : Ushio(I-line) PEB : 6min @ 95degC

Develop : SU-8 Developer @ 25degC / Immersion

KMPR SU-8

Line

Pattern

Hole

Pattern

Poor adhesion

Surface Cracks



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Temporary resist: solvent developable

Need: to prevent etching of sensitive materials

SubstrateElectro Line

AlCeramic

--

Platform is the same as alkaline developable resistSU-8 Developer (PGMEA based)Equivalent performance: aqueous & SU-8 developers



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XP KMPR-1000

Summary

XP KMPR-1000 is a temporary resist based on a new epoxy resin platform Film Thickness: >50 um Aspect Ratio: >5:1 Alkaline or solvent developable Plating Resistant Etching Resistant Easy to remove Excellent adhesion Crack-free

Applications• MEMS

Sensor, Actuator, Robot• IC packaging

Bump plating• Etch Mask

Wet, Dry

functional chemicals research laboratories copyright(c) nippon kayaku co., ltd. 1 kayaku microchem....

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