fsgm0465r

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April 2012

2009 Fairchild Semiconductor Corporation www.fairchildsemi.comFSGM0465R Rev. 1.0.3

FSGM0465RGreen-ModeFairchildPow

erSwitch(FPS)

FSGM0465RGreen-Mode Fairchild Power Switch (FPS)

Features

Soft Burst-Mode Operation for Low Standby PowerConsumption and Low Noise

Precision Fixed Operating Frequency: 66kHz

Pulse-by-Pulse Current Limit

Various Protection Functions: Overload Protection(OLP), Over-Voltage Protection (OVP), AbnormalOver-Current Protection (AOCP), Internal ThermalShutdown (TSD) with Hysteresis, Output-ShortProtection (OSP), and Under-Voltage Lockout (UVLO)with Hysteresis

Auto-Restart Mode

Internal Startup Circuit

Internal High-Voltage SenseFET: 650V

Built-in Soft-Start: 15ms

Applications

Power Supply for LCD TV and Monitor, STB and DVDCombination

Description

The FSGM0465R is an integrated Pulse WidthModulation (PWM) controller and SenseFET specificallydesigned for offline Switch-Mode Power Supplies(SMPS) with minimal external components. The PWMcontroller includes an integrated fixed-frequencyoscillator, Under-Voltage Lockout (UVLO), Leading-Edge Blanking (LEB), optimized gate driver, internal

soft-start, temperature-compensated precise currentsources for loop compensation, and self-protectioncircuitry. Compared with a discrete MOSFET and PWMcontroller solution, the FSGM series can reduce totalcost, component count, size, and weight; whilesimultaneously increasing efficiency, productivity, andsystem reliability. This device provides a basic platformsuited for cost-effective design of a flyback converter.

Related Resources

Fairchild Power Supply WebDesigner FlybackDesign & Simulation - In Minutes at No Expense

Ordering Information

Part Number Package

Operating

Junction

Temperature

Current

Limit

RDS(ON)(Max.)

Output Power Table(2)

Replaces

Device230VAC 15%

(3) 85-265VAC

Adapter(4) Open

Frame(5) Adapter

(4)

Open

Frame(5)

FSGM0465RWDTU

TO-220F6-Lead

(1)

W-Forming

-40C ~

+125C1.80A 2.6 60W 70W 33W 48W FSDM0465RE

FSGM0465RUDTU

TO-220F6-Lead(1)

U-Forming-

40C ~+125C

1.80A 2.6 60W 70W 33W 48W FSDM0465RE

FSGM0465RLDTU

TO-220F6-Lead

(1)

L-Forming

-40C ~

+125C1.80A 2.6 60W 70W 33W 48W FSDM0465RE

Notes:1. Pb-free package per JEDEC J-STD-020B.2. The junction temperature can limit the maximum output power.3. 230VACor 100/115VACwith voltage doubler.

4. Typical continuous power in a non-ventilated enclosed adapter measured at 50C ambient temperature.

5. Maximum practical continuous power in an open-frame design at 50C ambient temperature.
http://www.fairchildsemi.com/design_tools/power-supply-webdesigner/http://www.fairchildsemi.com/design_tools/power-supply-webdesigner/http://www.fairchildsemi.com/design_tools/power-supply-webdesigner/http://www.fairchildsemi.com/design_tools/power-supply-webdesigner/

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2009 Fairchild Semiconductor Corporation www.fairchildsemi.comFSGM0465R Rev. 1.0.3 2


erSwitch(FPS)

Application Circuit

Figure 1. Typical Application Circuit

Internal Block Diagram

Figure 2. Internal Block Diagram

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Electrical Characteristics (Continued)

TJ = 25C unless otherwise specified.

Symbol Parameter Conditions Min. Typ. Max. Unit

Total Device Section

IOPOperating Supply Current,(Control Part in Burst Mode) VCC= 14V, VFB = 0V 1.2 1.6 2.0 mA

IOPSOperating Switching Current,(Control Part and SenseFET Part)

VCC= 14V, VFB = 4V 2.0 2.5 3.0 mA

ISTART Start CurrentVCC = 11V (Before VCC

Reaches VSTART)0.5 0.6 0.7 mA

ICH Startup Charging Current VCC= VFB = 0V, VSTR= 40V 1.00 1.15 1.30 mA

VSTR Minimum VSTRSupply Voltage VCC= VFB = 0V, VSTRSweep 26 V

Notes:13. Although these parameters are guaranteed, they are not 100% tested in production.14. tLEBincludes gate turn-on time.

Comparison of FSDM0465RE and FSGM0465R

Function FSDM0465RE FSGM0465R Advantages of FSGM0465R

Burst Mode Advanced Burst Advanced Soft Burst Low noise and low standby power

Lightning Surge StrongEnhanced SenseFET and controller against

lightning surge

Soft-Start 10ms (Built-in) 15ms (Built-in) Longer soft-start time

Protections

OLP

OVP

TSD

OLP

OVP

OSP

AOCP

TSD with Hysteresis

Enhanced protections and high reliability

Power Balance Long TCLD Very Short TCLDThe difference of input power between the low

and high input voltage is quite small

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Typical Performance Characteristics

Characteristic graphs are normalized at TA=25C.

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

Figure 5. Operating Supply Current (IOP) vs. TA Figure 6. Operating Switching Current (IOPS) vs. TA

0.60

0.70

0.80

0.90

1.00

1.10

1.20

1.30

1.40

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

Figure 7. Startup Charging Current (ICH) vs. TA Figure 8. Peak Drain Current Limit (ILIM) vs. TA

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

Figure 9. Feedback Source Current (IFB) vs. TA Figure 10. Shutdown Delay Current (IDELAY) vs. TA

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Typical Performance Characteristics

Characteristic graphs are normalized at TA=25C.

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

Figure 11. UVLO Threshold Voltage (VSTART) vs. TA Figure 12. UVLO Threshold Voltage (VSTOP) vs. TA

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

Figure 13. Shutdown Feedback Voltage (VSD) vs. TA Figure 14. Over-Voltage Protection (VOVP) vs. TA

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40 -25 0 25 50 75 100 125

Normalized

Temperature [C]

Figure 15. Switching Frequency (fS) vs. TA Figure 16. Maximum Duty Ratio (DMAX) vs. TA

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Functional Description

1. Startup:At startup, an internal high-voltage currentsource supplies the internal bias and charges theexternal capacitor (CVcc) connected to the VCC pin, asillustrated in Figure 17. When VCC reaches 12V, theFSGM0465R begins switching and the internal high-voltage current source is disabled. The FSGM0465R

continues normal switching operation and the power issupplied from the auxiliary transformer winding unlessVCCgoes below the stop voltage of 7.5V.

Figure 17. Startup Block

2. Soft-Start: The FSGM0465R has an internal soft-start circuit that increases PWM comparator invertinginput voltage, together with the SenseFET current,slowly after it starts. The typical soft-start time is 15ms.The pulse width to the power switching device isprogressively increased to establish the correct working

conditions for transformers, inductors, and capacitors.The voltage on the output capacitors is progressivelyincreased to smoothly establish the required outputvoltage. This helps prevent transformer saturation andreduces stress on the secondary diode during startup.

3. Feedback Control: This device employs current-mode control, as shown in Figure 18. An opto-coupler(such as the FOD817) and shunt regulator (such as theKA431) are typically used to implement the feedbacknetwork. Comparing the feedback voltage with thevoltage across the RSENSE resistor makes it possible to

control the switching duty cycle. When the reference pinvoltage of the shunt regulator exceeds the internalreference voltage of 2.5V, the opto-coupler LED currentincreases, pulling down the feedback voltage andreducing drain current. This typically occurs when theinput voltage is increased or the output load is decreased.

3.1 Pulse-by-Pulse Current Limit: Because current-mode control is employed, the peak current throughthe SenseFET is limited by the inverting input of PWMcomparator (VFB*), as shown in Figure 18. Assumingthat the 210A current source flows only through theinternal resistor (3R + R =11.6k), the cathodevoltage of diode D2 is about 2.4V. Since D1 is blockedwhen the feedback voltage (VFB) exceeds 2.4V, themaximum voltage of the cathode of D2 is clamped atthis voltage. Therefore, the peak value of the currentthrough the SenseFET is limited.

3.2 Leading-Edge Blanking (LEB): At the instant theinternal SenseFET is turned on, a high-current spikeusually occurs through the SenseFET, caused byprimary-side capacitance and secondary-side rectifierreverse recovery. Excessive voltage across the RSENSEresistor leads to incorrect feedback operation in thecurrent mode PWM control. To counter this effect, theFSGM0465R employs a leading-edge blanking (LEB)circuit. This circuit inhibits the PWM comparator fortLEB (300ns) after the SenseFET is turned on.

OSCIFB

R

3R

Drain

FB

GND

Gate

Driver

PWM

2

1

4

IDELAY

VAOCP

VOSP

VSD

VCC Vref

OLP

OSP

AOCP

KA431

CFB

FOD817

VFBVOUT

RSENSE

VFB*

LEB(300ns)

D1 D2

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4. Protection Circuits: The FSGM0465R has severalself-protective functions, such as Overload Protection(OLP), Abnormal Over-Current Protection (AOCP),Output-Short Protection (OSP), Over-Voltage Protection(OVP), and Thermal Shutdown (TSD). All theprotections are implemented as auto-restart. Once thefault condition is detected, switching is terminated andthe SenseFET remains off. This causes VCC to fall.When VBCCB falls to the Under-Voltage Lockout (UVLO)stop voltage of 7.5V, the protection is reset and thestartup circuit charges the VCC capacitor. When VCCreaches the start voltage of 12.0V, the FSGM0465Rresumes normal operation. If the fault condition is notremoved, the SenseFET remains off and VCCdrops tostop voltage again. In this manner, the auto-restart canalternately enable and disable the switching of thepower SenseFET until the fault condition is eliminated.Because these protection circuits are fully integratedinto the IC without external components, the reliability isimproved without increasing cost.

Figure 19. Auto-Restart Protection Waveforms

4.1 Overload Protection (OLP): Overload is definedas the load current exceeding its normal level due toan unexpected abnormal event. In this situation, theprotection circuit should trigger to protect the SMPS.However, even when the SMPS is in normaloperation, the overload protection circuit can betriggered during the load transition. To avoid thisundesired operation, the overload protection circuit isdesigned to trigger only after a specified time todetermine whether it is a transient situation or a trueoverload situation. Because of the pulse-by-pulsecurrent limit capability, the maximum peak currentthrough the SenseFET is limited and, therefore, themaximum input power is restricted with a given inputvoltage. If the output consumes more than thismaximum power, the output voltage (VOUT) decreasesbelow the set voltage. This reduces the currentthrough the opto-coupler LED, which also reduces theopto-coupler transistor current, thus increasing thefeedback voltage (VFB). If VFB exceeds 2.4V, D1 isblocked and the 3.3A current source starts to chargeCFB slowly up. In this condition, VFB continues

increasing until it reaches 6.0V, when the switchingoperation is terminated, as shown in Figure 20. Thedelay time for shutdown is the time required to chargeCFB from 2.4V to 6.0V with 3.3A. A 25 ~ 50ms delayis typical for most applications. This protection isimplemented in auto-restart mode.

Figure 20. Overload Protection

4.2 Abnormal Over-Current Protection (AOCP):When the secondary rectifier diodes or thetransformer pins are shorted, a steep current withextremely high di/dt can flow through the SenseFETduring the minimum turn-on time. Even though theFSGM0465R has overload protection, it is not enoughto protect the FSGM0465R in that abnormal case;since severe current stress is imposed on theSenseFET until OLP is triggered. The FSGM0465Rinternal AOCP circuit is shown in Figure 21. When thegate turn-on signal is applied to the power SenseFET,the AOCP block is enabled and monitors the currentthrough the sensing resistor. The voltage across theresistor is compared with a preset AOCP level. If the

sensing resistor voltage is greater than the AOCPlevel, the set signal is applied to the S-R latch,

resulting in the shutdown of the SMPS.

Figure 21. Abnormal Over-Current Protection

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4.3. Output-Short Protection (OSP): If the output isshorted, steep current with extremely high di/dt canflow through the SenseFET during the minimum turn-on time. Such a steep current brings high-voltagestress on the drain of the SenseFET when turned off.To protect the device from this abnormal condition,OSP is included. It is comprised of detecting VFBandSenseFET turn-on time. When the VFBis higher than

2V and the SenseFET turn-on time is lower than1.2s, the FSGM0465R recognizes this condition asan abnormal error and shuts down PWM switchinguntil VCCreaches VSTARTagain. An abnormal conditionoutput short is shown in Figure 22.

MOSFET

Drain

Current

Rectifier

Diode

Current

VOUT

0

0

output short occurs

IOUT

tON1.2s

VFB*

1.2s

OSP

0

t

OSP triggered

ILm

VFB*=0.5V

VFB=2.0V

tOFF

ILIM

t

t

Figure 22. Output-Short Protection

4.4 Over-Voltage Protection (OVP): If thesecondary-side feedback circuit malfunctions or asolder defect causes an opening in the feedback path,

the current through the opto-coupler transistorbecomes almost zero. Then VFBclimbs up in a similarmanner to the overload situation, forcing the presetmaximum current to be supplied to the SMPS until theoverload protection is triggered. Because more energythan required is provided to the output, the outputvoltage may exceed the rated voltage before theoverload protection is triggered, resulting in thebreakdown of the devices in the secondary side. Toprevent this situation, an OVP circuit is employed. Ingeneral, the VCC is proportional to the output voltageand the FSGM0465R uses VCC instead of directlymonitoring the output voltage. If VCC exceeds 24.5V,an OVP circuit is triggered, resulting in the terminationof the switching operation. To avoid undesired

activation of OVP during normal operation, VCCshouldbe designed to be below 24.5V.

4.5 Thermal Shutdown (TSD): The SenseFET andthe control IC on a die in one package makes it easierfor the control IC to detect the over temperature of the

SenseFET. If the temperature exceeds ~140C, thethermal shutdown is triggered and the FSGM0465Rstops operation. The FSGM0465R operates in auto-restart mode until the temperature decreases to

around 110C, when normal operation resumes.

5. Soft Burst-Mode Operation: To minimize powerdissipation in standby mode, the FSGM0465R entersburst-mode operation. As the load decreases, thefeedback voltage decreases. As shown in Figure 23, thedevice automatically enters burst mode when thefeedback voltage drops below VBURL (500mV). At thispoint, switching stops and the output voltages start todrop at a rate dependent on standby current load. Thiscauses the feedback voltage to rise. Once it passesVBURH (700mV), switching resumes. At this point, thedrain current peak increases gradually. This soft burst-mode can reduce audible noise during burst-modeoperation. The feedback voltage then falls and theprocess repeats. Burst-mode operation alternately

enables and disables switching of the SenseFET,thereby reducing switching loss in standby mode.

VFB

VDS

0.50V

0.70V

IDS

VO

t

Switching

disabledt1 t2 t3

Switching

disabledt4

t

t

t

Soft Burst

Figure 23. Burst-Mode Operation

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2. Transformer

Figure 25. Schematic of Transformer

3. Winding Specification

Pin (SF) WireTurn

sWinding Method

Barrier Tape

TOP BOT Ts

Np /2 32 0.31 23 Solenoid Winding

Insulation: Polyester Tape t = 0.025mm, 2 Layers

N5V 89 0.42 (TIW) 3 Solenoid Winding 3.0mm 1


N14V 108 0.42 (TIW) 5 Solenoid Winding 2.0mm 1

Insulation: Polyester Tape t = 0.025mm, 2 LayersN5V 76 0.42 (TIW) 3 Solenoid Winding 3.0mm 1


Na 45 0.21 6 Solenoid Winding 3.0mm 4.0mm 1


Np/2 21 0.31 22 Solenoid Winding 2.0mm 1


4. Electrical Characteristics

Pin Specification Remark

Inductance 13 830H 7% 67kHz, 1V

Leakage 13 15H Maximum Short All Other Pins

5. Core & Bobbin

Core: EER3019 (Ae=134.0mm2)

Bobbin: EER3019

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6. Bill of Materials

Part # Value Note Part # Value Note

Fuse Capacitor

F101 250V 3.15A C101 220nF/275V Box (Pilkor)

NTC C102 150nF/275V Box (Pilkor)

NTC101 5D-9 DSC C103 100F/400V Electrolytic (SamYoung)Resistor C104 3.3nF/630V Film (Sehwa)

R101 1.5M, J 1W C105 27nF/100V Film (Sehwa)

R102 75k, J 1/2W C106 220nF SMD (2012)

R103 43k, J 1W C107 47F/50V Electrolytic (SamYoung)

R104 62, J 1/2W C201 1000F/25V Electrolytic (SamYoung)

R201 330, F 1/4W, 1% C202 1000F/25V Electrolytic (SamYoung)

R202 1.2k, F 1/4W, 1% C203 2200F/10V Electrolytic (SamYoung)

R203 18k, F 1/4W, 1% C204 1000F/16V Electrolytic (SamYoung)

R204 8k, F 1/4W, 1% C205 47nF/100V Film (Sehwa)

R205 8k, F 1/4W, 1% C206 100nF SMD (2012)

IC C207 100nF SMD (2012)

FSGM0465R FSGM0465RFairchild

SemiconductorC301 4.7nF/Y2 Y-cap (Samhwa)

IC201 KA431LZFairchild

SemiconductorInductor

IC301 FOD817BFairchild

SemiconductorLF101 15mH Line filter 0.5

Diode L201 5H 5A Rating

D101 1N4007 Vishay L202 5H 5A Rating

D102 UF4004 Vishay Jumper

ZD101 1N4749 Vishay J101

D201 MBR20150CTFairchild

Semiconductor Transformer

D202 FYPF2006DNFairchild

SemiconductorT101 830H

BD101 G2SBA60 Vishay

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Physical Dimensions

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE DOES NOT COMPLY TO ANY CURRENT PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. D) LEADFORM OPTION A

E) DFAWING FILENAME: TO220A06REV4

1.401.20 0.800.70

0.700.50

1,3,52,4,6

61

8.137.13

16.0715.67

3.482.88

3.06

2.46

24.0023.00

20.0019.00

6.906.50

2.742.34

3.40

3.20

10.169.96

(5.40)

(1.13)

0.600.45

(0.48)

(0.70)

5 5

(7.15)

(13.05)

2.19

1.27

3.81

1.75

(7.00)3.28

3.08

R0.55

R0.55

Figure 26. TO220F6L (WForming)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any mannerwithout notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify orobtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically thewarranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:http://www.fairchildsemi.com/packaging/.

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erSwitch(FPS)

fsgm0465r

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