fpga-based dynamic duty cycle and frequency controller for ... · generator electronic load...
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1 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
FPGA-basedDynamic Duty Cycle and Frequency Controller
for a Class-E2 DC-DC Converter
May 21st, 2018
Sanghyeon Park and Juan Rivas-Davila
SUPER Lab, Stanford University, USA
2 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Basic structure of ac-dc converters
60Hz,
110V
Rectifier
Unregulated
DC DC-DC
Converter
Regulated
DC
galvanic
isolation
3 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
The scope of this work
60Hz,
110V
Unregulated
DCRegulated
DCDC-DC
ConverterRectifier
galvanic
isolation
4 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Class-E2 dc-dc converter :It consists of a class-E inverter (left) and a class-E rectifier (right).
Class-E Inverter
a
Class-E RectifierLsLinv Lrect
Cinv Crect
VoutVin
Cs
Q D
Iout
[1] N. O. Sokal and A. D. Sokal, "Class E-A new class of high-efficiency tuned single-ended switching power amplifiers," IEEE Journal of
Solid-State Circuits, vol. 10, no. 3, pp. 168-176, Jun 1975.
[2] R. Zulinski and J. Steadman, "Class E Power Amplifiers and Frequency Multipliers with finite DC-Feed Inductance," IEEE Transactions
on Circuits and Systems, vol. 34, no. 9, pp. 1074-1087, September 1987.
[3] M. K. Kazimierczuk and J. Jozwik, "Resonant DC/DC converter with class-E inverter and class-E rectifier," IEEE Transactions on
Industrial Electronics, vol. 36, no. 4, pp. 468-478, Nov 1989.
5 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Class-E Inverter Vin = 80 V
a
Class-E Rectifier Vout = 12 V
Linv
Cinv
Vin
Q
sinusoidal current Is
Iin
Lrect
Crect
Vout
D
Iout
sinusoidal current Is
Class-E2 dc-dc converter : Class-E topology achieves zero-voltage and zero-dv/dt switching.
On
Off
On
Off
6 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Class-E Inverter Vin = 80 V
a
Class-E Rectifier Vout = 12 V
Linv
Cinv
Vin
Q
sinusoidal current Is
Iin
Lrect
Crect
Vout
D
Iout
sinusoidal current Is
20 V
Class-E2 dc-dc converter :The major downside is the circuit’s sensitivity to input and output voltages.
Lossy switching
7 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Class-E Inverter Vin = 80 V
a
Class-E Rectifier Vout = 12 V
Linv
Cinv
Vin
Q
sinusoidal current Is
Iin
Lrect
Crect
Vout
D
Iout
sinusoidal current Is
160 V
Class-E2 dc-dc converter :The major downside is the circuit’s sensitivity to input and output voltages.
Lossy switching
8 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Previous works : Resistance compression networkY. Han, O. Leitermann, D. A. Jackson, J. M. Rivas and D. J. Perreault, "Resistance Compression Networks for Radio-
Frequency Power Conversion," IEEE Transactions on Power Electronics, vol. 22, no. 1, pp. 41-53, Jan. 2007.
9 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Previous works : Consistant zero-crossing timingL. Roslaniec, A. S. Jurkov, A. A. Bastami and D. J. Perreault, "Design of Single-Switch Inverters for Variable Resistance/Load
Modulation Operation," IEEE Transactions on Power Electronics, vol. 30, no. 6, pp. 3200-3214, June 2015.
10 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Proposed method : Dynamic duty cycle and frequency
S. Park and J. Rivas, "Duty Cycle and Frequency Modulations in Class-E DC-DC Converters for Wide Input and Output
Voltage Ranges," IEEE Trans. Power Electronics, in press.
11 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Class-E2 dc-dc converter implementation for testing
Crect
Vout
Lp' Ls
k'
Cinv /n2
nVin
Lm
dc blocking cap
Linv Lrect
Cinv Crect
VoutVin is equivalent to
Class-E Inverter Class-E Rectifier
Class-E Inverter Class-E Rectifier
We implement
this structure.
S. Park and J. Rivas-Davila, "Isolated resonant DC-DC converters with a loosely coupled transformer," 2017 IEEE 18th
Workshop on Control and Modeling for Power Electronics (COMPEL), Stanford, CA, 2017.
12 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Lp
Cinv
Crect
gate driving signal
Ls
Q
D
Cout
Cin
Vin
Vout
gatebuffer
Class-E2 dc-dc converter implementation for testing
S. Park and J. Rivas-Davila, "Isolated resonant DC-DC converters with a loosely coupled transformer," 2017 IEEE 18th
Workshop on Control and Modeling for Power Electronics (COMPEL), Stanford, CA, 2017.
13 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Class-E2 dc-dc converter implementation for testing
S. Park and J. Rivas-Davila, "Isolated resonant DC-DC converters with a loosely coupled transformer," 2017 IEEE 18th
Workshop on Control and Modeling for Power Electronics (COMPEL), Stanford, CA, 2017.
675/48
Litz wire
GaN
transistor(GS66502B)
Si diode(MBR5H100MFS)
14 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Class-E2 dc-dc converter implementation for testing
S. Park and J. Rivas-Davila, "Isolated resonant DC-DC converters with a loosely coupled transformer," 2017 IEEE 18th
Workshop on Control and Modeling for Power Electronics (COMPEL), Stanford, CA, 2017.
Lp = 2000 nH
Ls = 499 nH
k = 0.26
Cinv = 3 nF
Crect = 6 nF
15 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Experimental setup for testing dynamic duty cycle and frequency control
signalgenerator
electronicload
oscilloscope
6V gate signalpower supply
Vin power supply
dc-dcconverter
thermalcamera
S. Park and J. Rivas-Davila, "Isolated resonant DC-DC converters with a loosely coupled transformer," 2017 IEEE 18th
Workshop on Control and Modeling for Power Electronics (COMPEL), Stanford, CA, 2017.
16 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Measured waveforms of the voltage across the inverter transistor : It maintains zero-voltage and zero-dv/dt switching for Vin = 80-200 V.
S. Park and J. Rivas, "Duty Cycle and Frequency Modulations in Class-E DC-DC Converters for Wide Input and Output
Voltage Ranges," IEEE Trans. Power Electronics, in press.
17 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Measured waveforms of the voltage across the rectifier diode : It maintains zero-voltage and zero-dv/dt switching for Vin = 80-200 V.
S. Park and J. Rivas, "Duty Cycle and Frequency Modulations in Class-E DC-DC Converters for Wide Input and Output
Voltage Ranges," IEEE Trans. Power Electronics, in press.
18 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
S. Park and J. Rivas, "Duty Cycle and Frequency Modulations in Class-E DC-DC Converters for Wide Input and Output
Voltage Ranges," IEEE Trans. Power Electronics, in press.
Inverter transistor duty cycletheoreticalexperimental
The d-f modulation strategy calls for a dedicated controller design.
19 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
S. Park and J. Rivas, "Duty Cycle and Frequency Modulations in Class-E DC-DC Converters for Wide Input and Output
Voltage Ranges," IEEE Trans. Power Electronics, in press.
Inverter transistor duty cycletheoreticalexperimental
The d-f modulation strategy calls for a dedicated controller design.
Switching frequencytheoreticalexperimental
20 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
S. Park and J. Rivas, "Duty Cycle and Frequency Modulations in Class-E DC-DC Converters for Wide Input and Output
Voltage Ranges," IEEE Trans. Power Electronics, in press.
Inverter transistor duty cycle
experimental
The d-f modulation strategy calls for a dedicated controller design.
We need a controller that changes
the duty cycle and frequency of
the gate driving signal,
depending on the in/out voltages.
Switching frequency
experimental
21 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
The d-f modulation strategy calls for a dedicated controller design.
Load
variation
22 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
The d-f modulation strategy calls for a dedicated controller design.
On-off control for output
voltage regulation under
the load variation
on on on
offoff off
Load
variation
23 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
The d-f modulation strategy calls for a dedicated controller design.
Vin = 80 V–200 V Vout = 5 V–20 V
On-off control for output
voltage regulation under
the load variation
on on on
offoff off
Load
variation
24 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
The d-f modulation strategy calls for a dedicated controller design.
On-off control for output
voltage regulation under
the load variation
on on on
offoff off
Load
variation
d-fmodulation to minimize the
switching loss under input / output
voltage variations
Vin = 80 V–200 V Vout = 5 V–20 V
gate drivingsignal
25 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
The controller prototype using Mojo v3 FPGA
Mojo v3 FPGA development board
- Xilinx Spartan 6 FPGA
- ADC with 8 input channels
- Clock speed up to 300 MHz
- 84 digital input/output pins
26 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
The controller prototype using Mojo v3 FPGA
Mojo v3 FPGA development board
- Xilinx Spartan 6 FPGA
- ADC with 8 input channels
- Clock speed up to 300 MHz
- 84 digital input/output pins
Vout to ADC input
Vin to ADC input
User-selectable
output voltage
Gate driving signal
- on-off controlled
- d-f modulated
27 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
⟨⟨ lookup_table ⟩⟩
Vin,Vout LUT
sw_period
duty_cycle
Design details of the FPGA-based controller
28 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
⟨⟨ lookup_table ⟩⟩
Vin,Vout LUT
sw_period
duty_cycle
⟨⟨ pwm ⟩⟩
counterduty_cycle
sw_period
gate_drv_sig
Design details of the FPGA-based controller
29 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Vout < Vout,target ?
gate_drv_sigon-off gate driving signal
⟨⟨ on_off_ctrl ⟩⟩
⟨⟨ lookup_table ⟩⟩
Vin,Vout LUT
sw_period
duty_cycle
⟨⟨ pwm ⟩⟩
counterduty_cycle
sw_period
gate_drv_sig
Design details of the FPGA-based controller
30 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Schematic of the controller and peripheral circuits
Cinv
VinCrect
Lp Ls
k
Q
D
Cin
+
Vout
Cout
+
5-20V
2.5-10V
unity-gain
isolation
amplifier
80-200V
1.3-3.3VFPGA
controller
Vout selection bits
gate driving signal
31 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Controller implementation
extra Cout
isolation amplifier
Vout
Vin gate driving signal
FPGA board
Vout,target selection switch
ADC input ports(under the controller board)
controller board
32 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
electronicload
oscilloscope
aux power supplies
Vin power supply
thermalcamera
Experimental setup for testing the controller
dc-dcconverter controller
33 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Class-E2
dc-dcconverter
controller
Experimental setup for testing the controller
34 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Step change in the output voltage
output voltage5 V/div
gate driving signal5 V/div
voltage across rect. diode20 V/div
voltage across inv. transistor100 V/div
Vin = 120 V, Rload = 10 Ω
Vout from 5 V to 9 V
35 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Step change in the output voltage
output voltage5 V/div
gate driving signal5 V/div
voltage across rect. diode20 V/div
voltage across inv. transistor100 V/div
Vin = 120 V, Rload = 10 Ω
Vout from 9 V to 12 V
36 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Step change in the output voltage
output voltage5 V/div
gate driving signal5 V/div
voltage across rect. diode20 V/div
voltage across inv. transistor100 V/div
Vin = 120 V, Rload = 20 Ω
Vout from 12 V to 20 V
37 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Step change in the output voltage : closer look
output voltage5 V/div
gate driving signal5 V/divd = 0.10, f = 2.07 MHz
voltage across rect. diode20 V/div
voltage across inv. transistor100 V/div
horizontal timescale200 ns/div
Vin = 120 V, Vout = 5 V
38 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Step change in the output voltage : closer look
output voltage5 V/div
voltage across rect. diode20 V/div
voltage across inv. transistor100 V/div
horizontal timescale200 ns/div
gate driving signal5 V/divd = 0.12, f = 2.06 MHz
Vin = 120 V, Vout = 9 V
39 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Step change in the output voltage : closer look
output voltage5 V/div
voltage across rect. diode20 V/div
voltage across inv. transistor100 V/div
horizontal timescale200 ns/div
gate driving signal5 V/divd = 0.14, f = 2.04 MHz
Vin = 120 V, Vout = 12 V
40 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Step change in the output voltage : closer look
output voltage5 V/div
voltage across rect. diode20 V/div
voltage across inv. transistor100 V/div
horizontal timescale200 ns/div
gate driving signal5 V/divd = 0.16, f = 1.94 MHz
Vin = 120 V, Vout = 20 V
41 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Step change in the load resistance from 7 Ω to 30 Ω
output voltage5 V/div
gate driving signal5 V/div
voltage across rect. diode50 V/div
voltage across inv. transistor100 V/div
Vin = 120 V, Vout = 12 V
42 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Efficiency at different output powers
Vin = 80 V Vin = 120 V
43 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Efficiency at different output powers
Vin = 80 V Vin = 120 V
Synchronous rectification and
a low-μ magnetic core achieve
95.71 % efficiency (80 V-to-20 V conversion).S. Park and J. Rivas,
"Isolated Resonant
DC-DC Converters
with a Loosely
Coupled Transformer,
" in Control and Modeli
ng for Power Electroni
cs (COMPEL), Jul.
2017.
44 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Efficiency at different output powers
Vin = 160 V Vin = 200 V
45 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Comparison with and without dynamic duty cycle and frequency: Efficiency drops when duty cycle and frequency are fixed
instead of being dynamically changed (Rload = 20 Ω)
Vin = 120 V, Vout = 5-20 VVin = 80-200 V, Vout = 12 V
46 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
inverter transistor: 35 °C
rectifier diode: 31 °C
inverter transistor: 29 °C
rectifier diode: 31 °C
invertertransistor
rectifierdiode
Comparison with and without dynamic duty cycle and frequency
Reference picture
Vin = 120 V, Vout = 12 V, Rload = 20 Ω
Normal operationWhen d and f aremistuned to Vout of 5 V
efficiency = 77 % efficiency = 74 %
47 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
Comparison with and without dynamic duty cycle and frequency
Vin = 120 V, Vout = 12 V, Rload = 20 Ω Lossy switching
output voltage5 V/div
voltage across rect. diode50 V/div
voltage across inv. transistor100 V/div
gate driving signal, 5 V/div,mistuned to Vout of 5 Vd = 0.10, f = 2.07 MHz
horizontal timescale200 ns/div
48 / 48 Sanghyeon Park, SUPER Lab, Stanford University, USAMay 21, 2018 IPEC-Niigata 2018
►Class-E2 dc-dc converter loses its zero-voltage and zero-dv/dt switching
when the input and output voltage changes.
►We found that we can solve the problem by changing the gate driving
signal’s duty cycle and frequency.
►We developed a controller that reads the input / output voltages and drives
the transistor with appropriate duty cycle and frequency.
►The controller regulates the output voltage by on-off control scheme.
Summary