Focus Product Selector Guide

Focus Product Selector Guide

www.microchip.com

www.microchip.com2

Microchip: A Partner in Your Success

Microchip is a leading provider of semiconductor supplier of smart, connected and secure embedded control solutions, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Offering outstanding technical support along with dependable delivery and quality, Microchip serves over 125,000 cus-tomers across the industrial, automotive, consumer, aerospace and defense, communications and computing markets worldwide.

8-bit MicrocontrollersMicrochip’s PIC® and AVR® microcontrollers (MCUs) represent two dominant architectures for embedded design. With a combined 45 years’ experience developing commercially available and cost-effective 8-bit MCUs, Microchip is the supplier of choice for many due to its strong legacy and history of innovation in 8-bit. Our current lineup of 8-bit PIC and AVR MCUs incorporates the latest technologies to enhance system performance while reducing power consumption and development time. With more than 1,200 devices, Microchip offers the industry’s largest 8-bit portfolio. Key features include Core Independent Peripherals, low-power performance with picoPower® and eXtreme Low Power (XLP) technology, industry-leading robustness driven by best-in-class EMI/EMC performance and simplified development with our suite of easy-to-use development tools. For more information visit: www.microchip.com/8bit.

16-bit PIC MicrocontrollersThe PIC24 is a cost-effective, eXtreme Low Power (XLP) family of MCUs, featuring devices with dual partition memory up to 1024 KB of Flash and a rich set of Core Independent Periph-erals (CIPs). Our portfolio offers an upgrade in features for applications that are pushing the boundaries of 8-bit MCU capabilities, offering more memory, more pins and faster peripherals in the same ecosystem for easy migration. The PIC24 MCUs also feature hardware safety features. For more information visit: www.microchip.com/16bit.

dsPIC® Digital Signal ControllersThe dsPIC family of Digital Signal Controllers (DSCs) features a Digital Signal Processor (DSP) engine with up to 100 MIPS performance capable of high-efficiency, high-precision variable speed, constant torque PI control and Field Oriented Control (FOC) motor control. Equipped with high-level analog integra-tion and capable of operating up to 150°, the dsPIC33 family is ideal for PMSM, ACIM and BLDC motor control in industrial, medical, automotive and consumer applications.

Many dsPIC33 DSCs are “Functional Safety Ready” with integrated safety features and offer safety manuals, FMEDA reports and diagnostic software. For more information visit: www.microchip.com/16bitfunctionalsafety.

32-bit MicrocontrollersFrom simple embedded control to advanced graphics, secure Internet of Things (IoT) and functional safety applications, Microchip portfolio of 32-bit MCUs can meet your design challenge. Spanning a wide range of options—from offering the industry’s lowest power consumption to delivering the highest performance—these MCUs run at up to 600 DMIPs and deliver ample code and data space with up to 2048 KB Flash and 512 KB RAM with 32 MB integrated DDR2 DRAM or 128 MB externally addressable options. They are sup-ported by novel and easy-to-use software solutions to speed up your application development. For more information visit: www.microchip.com/32bit.

32-bit Arm® MicroprocessorsAs you push beyond the boundaries of 32-bit MCUs, the SAM9 (ARM9) and SAMA5 (Cortex® A5) microprocessor (MPU) families provide the power and performance needed for demanding applications. They feature up to 600 MHz (942 DMIPS) operation and System-in-Package options with integrated DDR2 or LPDDR2 memory and System-on-Mod-ules. Microchip’s MPUs offer a rich set of peripherals and user interfaces including Gigabit Ethernet MACs, high-speed USB, hardware video decoding, capacitive touch, 12-bit CMOS im-age (camera) sensors, I2S audio interfaces and advanced 24-bit graphic LCD controllers with overlays. They deliver market-leading low power (down to 0.3 mW sleep) and advanced security features needed for Internet-connected gateways and cost-sensitive industrial and consumer applications. The MPU devices come with free Linux® OS and third-party tools and software, and low-cost hardware development boards are available to ease development. For more information visit: www.microchip.com/mpu.

Analog and Interface ProductsMicrochip’s integrated analog technology, peripherals and features are engineered to meet today’s demanding design requirements. Our extensive spectrum of analog products addresses thermal management, power management, battery management, mixed-signal, linear, interface and safety and security solutions. Our broad portfolio of stand-alone analog and interface devices offers highly integrated solutions that combine various analog functions in space-saving pack-ages and support a variety of bus interfaces. Many of these

Focus Product Selector Guide 3

Microchip: A Partner in Your Success

devices support functionality that enhances the analog features currently available on PIC microcontrollers. Microchip extends power solutions with a broad portfolio of Silicon diodes, MOSFETs and IGBTs and Silicon Carbine (SiC) MOSFETs and Schottky Barrier Diodes (SBDs). For more information visit: www.microchip.com/analog.

Security and Authentication ProductsMicrochip offers a series for secure key storage products with the CryptoAuthentication devices, CryptoAutomotive devices and TPM. For applications such as disposables, accessories and nodes used in home automation, industrial networking, medical and other applications, these devices employ secure, hardware-based cryptographic key storage and cryptographic countermeasures such as active anti-tamper protection, side channel attack protections, which offer higher security than software-based solutions. To further reduce complexity and cost of your supply chain, Microchip also offer a secure key provisioning service integrated as part of the Trust Platform program. For more information visit: www.microchip.com/SecureElements.

Timing and Communication ProductsMicrochip has an expansive, wide-ranging clock and timing portfolio that delivers total solutions for your complex timing requirements. Our oscillator products offer both low-jitter and low-power online-configurable products with the option of choosing a traditional quartz-based solution or going with our MEMS silicon-based resonator products. The clock generation line offers online configurable, single chip, multiple-frequency clock tree solutions. Rounding out the portfolio, our clock and data distribution product line includes one of the industry’s largest portfolios of buffers, logic translators and multiplexers.

With the right combination of products, configuration tools and technical support, Microchip’s Timing and Communications products are ideal for all designs, from simple to high- performance systems. For more information visit: www.microchip.com/timing.

Real-Time Clock/CalendarMicrochip offers a family of highly integrated, low-cost Real-Time Clock/Calendar devices with battery backup capability, digital trimming, plus on-board EEPROM and SRAM memory. For more information visit: www.microchip.com/clock.

Memory ProductsMicrochip’s broad portfolio of memory devices includes Serial EEPROM, Serial SRAM, Serial Flash, Serial NVSRAM, Serial EERAM, Parallel EEPROM, Parallel OTP (One-Time Programmable) and Parallel Flash devices. Our innovative, low-power designs and extensive testing have ensured industry-leading robustness and endurance, along with best-in-class quality, at low costs. For more information visit: www.microchip.com/memory.

Wireless ProductsThe Microchip wireless portfolio is focused on offering ex-tremely low-power operation and is designed for sensing or command/control operation products. This extensive portfolio is comprised of solutions for Wi-Fi®, Bluetooth®, LoRa® technol-ogy, 802.15.4 (such as zigbee® or MiWi™ wireless networking protocol) along with proprietary 2.4 GHz and Sub-GHz com-munications. The TimberwolfTM platform is the latest-generation audio processor. The hardware architecture is ideal for today’s growing need for hands-free communications and Human To Machine (H2M) voice interfaces. This field-upgradable platform is designed for multiple end-market applications. For more information visit: www.microchip.com/wireless.

High-Throughput USB and Ethernet Interface SolutionsHigh-speed networking is the backbone of many industrial, IoT, consumer and automotive applications. Microchip offers a complete portfolio of Ethernet PHYs, switches, controllers and bridge devices, enabling up to 10 Gigabit-speed communica-tions in harsh environments. For high-speed telecommunica-tions networks deployed by service providers and hyperscalers, 400 Gigabit PHYs enable application ranging including data center and edge routers, switches and optical transport platforms.

The USB offering spans low cost to SuperSpeed Plus and incorporates value-rich solutions such as USB SmartHub controllers, power delivery and charging, transceivers/switches, Flash media controllers and security solutions. For more information visit www.microchip.com/usb and www.microchip.com/ethernet.

www.microchip.com4

MOST® TechnologyMedia Oriented Systems Transport (MOST) technology is the accepted standard in high-bandwidth automotive infotain-ment systems. It is broadly standardized from the physical layer up to the application level. Various speed grades and physical layers are available. The highly flexible and scal-able MOST platform can transmit A/V streaming, packet, and isochronous and control data. It is also approved to transmit DVD and Blu-ray™ content using Digital Transmis-sion Content Protection (DTCP). For more information visit: www.microchip.com/automotiveproducts.

Embedded Controllers and Super I/OMicrochip’s computing-related products include state-of-the-art embedded controllers based on the innovative eSPI bus tech-nology, Input/Output (I/O) devices, keyboard controllers, root of trust, secure boot and authentication devices and system-management devices. These components serve the computing industry, including major OEMs and motherboard manufactur-ers worldwide. Applications include traditional computing applications such as notebooks and desktops, and embedded computing which is found in a variety of applications such as information kiosks, networking equipment, automatic teller machines and devices for the oil and gas industries. For more information visit: www.microchip.com/computing.

Touch, Multi-Touch and 3D Gesture ControlMicrochip offers the most feature-rich solutions in capacitive sensing for applications ranging from single-touch buttons and proximity sensing to touchpads, touchscreens and free-space 3D gesture control. Turnkey solutions (maXTouch® technology) as well as MCU/MPU solutions (PIC, AVR, PIC32 and SAM) come with Graphical User Interface (GUI) software tools and code configurators for easy design-in cycles that shorten your time to market. For more information please visit: www.microchip.com/touch.

Power over Ethernet (PoE) Systems and ICsMicrochip offers a comprehensive end-to-end portfolio of PoE solutions comprised of PoE ICs and PoE Injectors/Systems. Microchip’s PoE ICs product line is the broadest in the market with PSE ICs featuring 1 to 8 ports, presenting the highest integration level and lowest total BOM cost. The PD ICs line provides solutions with and without integrated PWM control-lers and is used as a compact way to convert PoE input power to one or more output voltages. The PoE Injectors/Systems line includes stand-alone PoE Injectors/Midspans and Switches ranging from single-port to multi-port solutions. These

off-the-shelf products can be added by customers to their portfolio while saving the development efforts on their side. The PoE Injectors support best-of-breed PoE deployments mak-ing it easier than ever to install PoE-enabled Ethernet-based devices in both indoor, outdoor and industrial environments. The PoE multi-port injectors increase the flexibility and longevity of Ethernet networks.

Optical Networking SolutionsMicrochip OTN processors and OTN PHYs offer leading innovation, integration and power for Data Center Interconnect (DCI) and metro and regional optical transport networks. They deliver the quickest time to market and lowest R&D expense for the OEM and minimize the total cost of ownership for the service provider. We also offer a comprehensive portfolio of op-tical networking solutions for Synchronous Optical Networking/Synchronous Digital Hierarchy (SONET/SDH), T1/E1 and Fiber-to-the-Home/Passive Optical Network (FTTH/PON) protocols. For more information visit: www.microchip.com/design-centers/high-speed-communications/optical-networking

FPGAsOur unique, low-power, non-volatile technology sets Micro-chip’s Field Programmable Gate Arrays (FPGAs) apart from traditional SRAM-based devices. With an extensive heritage of reliability, Microchip’s FPGAs and SoCs meet demands for low power, and security in a variety of applications.

In wired and wireless communications, defense and avia-tion, and industrial embedded applications, Microchip FPGAs deliver ample resources at the lowest power, highest reliability and greatest security. Microchip FPGAs demonstrate value in applications such as hardware acceleration, artificial intelligence, image processing and edge computing with robust DSP and memory resources.

Storage AdaptersMicrochip’s Smart Storage stack delivers one of the industry’s broadest portfolios of trusted storage solutions that reliably move, manage, and store critical data and digital content. Adaptec® SmartRAID RAID adapters and SmartHBA and HBA Host Bus Adapters deliver the security and performance needed by critical applications, lower your power footprint and scale for future growth. Our high quality, reliable solutions are backed by decades of experience and technical support to guide you from purchase to implementation of your design. For more information visit: www.microchip.com/smartstorage

Focus Product Selector Guide 5

Table of Contents8-bit PIC Microcontrollers . . . . . . . . . . . . . . . . . . . . . 68-bit AVR Microcontrollers . . . . . . . . . . . . . . . . . . . . 716-bit Microcontrollers and dsPIC Digital Signal Controllers . . . . . . . . . . . . . . . . . . . . . . 932-bit Microcontrollers . . . . . . . . . . . . . . . . . . . . . . 1232-bit Microprocessors . . . . . . . . . . . . . . . . . . . . . . 15Analog and Interface Products . . . . . . . . . . . . . . . . 17Thermal Management . . . . . . . . . . . . . . . . . . . . . . . 17Power Management . . . . . . . . . . . . . . . . . . . . . . . . 17Display and LED Drivers . . . . . . . . . . . . . . . . . . . . . 24High-Voltage Interface . . . . . . . . . . . . . . . . . . . . . . 25Linear . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Mixed Signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Interface (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Interface (LIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Ultrasound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31CO and Smoke Detector ICs . . . . . . . . . . . . . . . . . 32Motor Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Timing and Communication Products . . . . . . . . . . . 33Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33Clock and Data Distribution . . . . . . . . . . . . . . . . . . 34High-Speed Communication . . . . . . . . . . . . . . . . . 48Memory Products . . . . . . . . . . . . . . . . . . . . . . . . . . 49Wireless Products . . . . . . . . . . . . . . . . . . . . . . . . . . 55Wireless Audio . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56USB Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57Ethernet Products . . . . . . . . . . . . . . . . . . . . . . . . . 58Automotive Products . . . . . . . . . . . . . . . . . . . . . . . 61Embedded Controllers and Super I/O . . . . . . . . . . . 63Security Products . . . . . . . . . . . . . . . . . . . . . . . . . . 63Touch and 3D Gesture Control . . . . . . . . . . . . . . . . 64Power Discretes and Modules . . . . . . . . . . . . . . . . 65Power over Ethernet . . . . . . . . . . . . . . . . . . . . . . . . 70FPGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74Data Center Solutions . . . . . . . . . . . . . . . . . . . . . . . 76Terms and Definitions . . . . . . . . . . . . . . . . . . . . . . . 79

PCIe SolutionsMicrochip’s Switchtec PCIe switches are the industry’s highest-density, lowest-power PCIe switches, enabling solutions for a wide variety of systems from data center equipment, GPU workstations/servers, GPU arrays, pooled storage/compute/networking, multi-host architectures, Just a Bunch Of Flash (JBOF), PCIe SSD enclosures, flash arrays, high-density serv-ers, communications, and any applications requiring low-power and high-reliability PCIe switching.

The Switchtec PFX Gen 3 and Gen 4 Fanout PCIe switches are high-reliability, low-power PCIe switches supporting up to 100 PCIe lanes, advanced error containment, comprehensive diagnos-tics and debug capabilities, and a wide breadth of I/O interfaces.For more information visit: www.microchip.com/PCIeSwitches

www.microchip.com6

8-bi

t PIC

® M

icro

cont

rolle

rs

Prod

uct F

amily

Pin Count

Program Flash Memory (KB)

RAM (KB)

Data EE (B)

Inte

llige

nt A

nalo

g W

avef

orm

Con

trol

Logi

c an

d M

ath

Safe

ty a

nd

Mon

itorin

gC

omm

unic

atio

nsU

ser

Inte

rfac

e

Low

Po

wer

an

d Sy

stem

Fl

exib

ility

Packages

ADC (# of bits)

CompHSComp

DAC (# of bits)

OPA

SlopeComp / PRGZCDCCP/ECCP10-bit PWM16-bit PWMCOGCWGNCODSMHLT (8-bit)Universal TimerNCO (20-bit)SMT (24-bit)RTCCTEMP/TSCLCMULTMathACCCRC/SCAN

HLT

WWDT

USART

UART with Protocols

I²C/SPI

USB with ACT

LIN CapablemTouch® Sensing HCVDLCD w/ charge pumpPPSIDLE/DOZE/PMDDMA/VIDIA/MAP

PIC

10(L

)F3X

X6

384–

896

B0.

064

HEF

8ü

üü

üüü

üSO

T-23

, DFN

, PDI

P

PIC

16F1

52XX

8-40

3.5-

280.

5-2

–10

üü

üüüü

ü1

üü

üü

üDF

N, S

OIC

, SSO

P, T

SSO

P, V

QFN

, PD

IP, T

QFP

PIC

12/1

6 LF

155X

/6X

14–2

07–

141.

024

HEF

10(2

)ü

üü

üüüü

PDIP,

SO

IC 1

50m

il, TS

SOP,

QFN

, SS

OP

208m

il, UQ

FN, S

OIC

300

mil,

SPDI

P, T

QFP

PIC

16(L

)F14

5X14

–20

141.

024

HEF

10ü

üü

üü

üüüü

PDIP,

SO

IC 1

50m

il, TS

SOP,

QFN

, UQ

FN, S

OIC

300

mil,

SSO

P 20

8mil

PIC

1X(L

)F15

7X8–

201.

75–1

41.

024

HEF

10ü

5ü

üü

üü

üü

üDF

N, M

SOP,

PDI

P, S

OIC

150

mil,

UDFN

, TSS

OP,

UQ

FN, P

DIP,

SO

IC

300m

il, SS

OP

208m

il

PIC

16(L

)F15

3XX

8–48

3.5–

282.

048

HEF

10ü

5üüü

üü

üü

üü

üü

2ü

üü

üü

üPD

IP, S

OIC

150

mil,

TSSO

P, U

QFN

, SO

IC 3

00m

il, SS

OP

208m

il, Q

FN,

SPDI

P, T

QFP

PIC

1X(H

V)F7

52/5

38–

141.

75–3

.50.

128

–10

ü5/

9ü

SCü

üü

üü

DFN,

PDI

P, S

OIC

150

mil,

TSSO

P, Q

FNPI

C1X

(L)F

161X

8–14

3.5

0.25

6HE

F10

ü8

üü

üü

üü

üüüü

üDF

N, P

DIP,

SO

IC 1

50m

il, TS

SOP,

QFN

PIC

16(L

)F16

1X (3

)14

–20

7–14

1.02

4HE

F10

ü8

üüü

üü

üüü

üüüüü

üüü

üPD

IP, S

OIC

150

mil,

TSSO

P, Q

FN, S

OIC

30

0mil,

SSO

P 20

8mil,

UQFN

, TQ

FPPI

C18

-Q40

/114

-20

16-3

21-

451

212

(4)ü

8ü

(5)

üü

üüüüü

üüüü

üüü

21ü

üüü

üüüü

SOIC

, TSS

OP,

QFN

, PDI

P

PIC

16(L

)F17

0X/7

1X14

–40

3.5–

282.

048

HEF

10ü

5/8ü

üüü

üü

üüü

üü

üüü

üPD

IP, S

OIC

150

mil,

TSSO

P, Q

FN,

SOIC

150

mil,

UQFN

, SO

IC 3

00m

il, SS

OP

208m

il

PIC

16(L

)F17

6X/7

X14

–40

7–28

2.04

8HE

F10

ü5/

10üüüüüüü

üüü

üü

üü

üüü

üPD

IP, S

OIC

150

mil,

TSSO

P, Q

FN,

SOIC

300

mil,

SSO

P 20

8mil,

SPDI

P,

UQFN

, TQ

FP

PIC

16(L

)F18

3XX

8–20

3.5–

142.

048

256

10ü

5üü

üüü

üüü

üü

üü

üü

PDIP,

SO

IC 1

50m

il, UD

FN, T

SSO

P,

UQFN

, SO

IC 3

00m

il, SS

OP

208m

il

PIC

16(L

)F18

4XX

14-2

87-

282.

048

256

12(4

)ü

5üüü

üü

üüü

üü

üü

üüü

üü

üUQ

FN, P

DIP,

SO

IC, T

SSO

P, S

SOP,

VQ

FN, S

PDIP

PIC

16(L

)F18

8XX

28–4

07–

564.

096

256

10(4

)ü

5üüü

üüüü

üü

üü

üüüü

üüüü

üü

QFN

, SO

IC 3

00m

il, SP

DIP,

SSO

P 20

8mil,

UQFN

, PDI

P, T

QFP

PIC

18-Q

1028

-40

16-1

281-

3.6

256- 1K

10(4

)ü

5üüü

üüü

üüü

üüü

2ü

üüü

üü

QFN

, SO

IC, S

PDIP,

SSO

P, V

QFN

, PD

IP, T

QFP

PIC

18-Q

4328

-48

32-1

282-

810

2412

(4)ü

8üü

üüüüü

üüüü

üüü

41ü

üüü

üüüü

QFN

, SO

IC, S

PDIP,

SSO

P, V

QFN

, PD

IP, T

QFP

PIC

18-Q

84 (6

)28

-48

64-1

288-

1310

2412

(7)ü

8üü

üüüüüüüü

üü

üüü

32ü

üü

üüüü

VQFN

, PDI

P, S

OIC

, SSO

P,TQ

FPPI

C16

(L)F

191X

X28

–64

14–5

64.

096

256

12(4

)ü

5üüü

üü

üüüü

üüü

üüüüüüü

üQ

FN, T

QFP

PIC

18-K

4028

–64

16–1

283.

728

256– 1K

10(4

)ü

5üüü

üüü

üü

üüü

5ü

üüü

üü

QFN

, SO

IC 3

00m

il, SP

DIP,

SSO

P 20

8mil,

UQFN

, PDI

P, T

QFP

PIC

18-K

4228

–48

16–1

288.

192

256– 1K

12(4

)ü

5üüü

üüüü

üü

üüü

üüü

11ü

üüü

üüüü

QFN

, SO

IC 3

00m

il, SP

DIP,

SSO

P 20

8mil,

UQFN

PIC

18-J

9464

–100

32–1

284.

096

–12

üü

üü

4üüüü

üüü

QFN

, TQ

FPNo

tes:

(1) I

n ad

ditio

n to

sta

ndar

d 8-

bit a

nd 1

6-bi

t tim

ers

(2) I

ndep

ende

nt D

ual A

DC M

odul

es (3

) PIC

16F1

615/

9 in

clude

an

angu

lar ti

mer

. (4)

ADC

C: A

nalo

g-to

-Dig

ital C

onve

rter w

ith C

ompu

tatio

n (5

) PIC

18-Q

41 h

as a

n O

PAM

P (6

) Dev

ice is

CA

N-FD

cap

able

(7) A

nalo

g-to

-Dig

ital C

onve

rter w

ith C

ompu

tatio

n an

d Co

ntex

t Sw

itchi

ng (6

) CAN

-FD

& JT

AG c

apab

le

Focus Product Selector Guide 7

8-bi

t AVR

® M

icro

cont

rolle

rs

Prod

uct

Fam

ily

Pin Count

Program Flash Memory (KB)

SRAM (KB)

Supply Voltage

Speed (MHz) Single Cycle Instruction: MHz = MIPS

Inte

llige

nt A

nalo

gW

avef

orm

C

ontr

olTi

min

g an

d M

easu

rem

ents

Logi

c,

Cryp

to a

nd

Mat

h

Safe

ty a

nd

Mon

itorin

gCo

mm

unic

atio

nsU

ser

Inte

rfac

eSy

stem

Fle

xibi

lity

ADC (# of bits)

ADC (# of channels)

Comparators

ADC Gain Stage

DAC (# of bits)

Temperature Sensor

Internal Voltage Reference

Zero Cross Detector (ZCD)

8-bit PWM

16-bit PWM

Quadrature DecoderWaveform Extension (WeX)Real-Time Counter8-bit Timer/Counters12-bit Timer Counter

16-bit Timer/Counter

CCL

MULTCrypto (AES/DES)CRC/SCANPORBODWDT

USART

USB

I²C

SPI

IRCOM

Serial Number

QTouch® Technology

QTouch Technology with PTC(2)

LCD

External Bus Interface

DMA ChannelsEvent SystemSleepWalkingSleep ModespicoPower® Technology

ATtin

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ATtin

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ATtin

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ATtin

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ATtin

y87/

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ATtin

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ATtin

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ATtin

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ATm

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520

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ATm

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iphe

ral T

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trolle

r 3: O

nly o

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tiny5

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ATm

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281/

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meg

a328

PB 7

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on

the

C3 a

nd C

4 8:

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www.microchip.com8

8-bi

t PIC

and

AVR

MC

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nsor

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mab

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in s

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ffere

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Gen

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pack

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grity

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set

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e de

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set u

ntil t

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ge is

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sure

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mem

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ents

cod

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SB 2

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evice

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Gen

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purp

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com

mun

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SPI:

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ceG

ener

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wire

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mun

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mun

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ns

USE

R IN

TERF

ACE:

Cap

acitiv

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uch

Sens

ing

and

LCD

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rol

LCD

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quid

Cry

stal

Disp

layHi

ghly

inte

grat

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egm

ente

d LC

D co

ntro

ller

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uch®

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icroc

hip

Prop

rieta

ry

Touc

h Te

chno

logy

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a s

impl

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utio

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ontro

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impl

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sol

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reali

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rface

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trolle

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PO

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M F

LEXI

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echn

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riphe

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DM

A: D

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Mem

ory

Acce

ssM

oves

dat

a be

twee

n m

emor

ies a

nd p

erip

hera

ls w

ithou

t CPU

ove

rhea

d,

impr

ovin

g ov

erall

sys

tem

per

form

ance

and

effic

iency

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t Sys

tem

Flex

ible

rout

ing

of p

erip

hera

l eve

nts,

abi

lity to

con

trol p

erip

hera

l in

depe

nden

t fro

m th

e CP

U

Exte

rnal

Bus

Inte

rface

High

ly fle

xible

mod

ule

for i

nter

facin

g ex

tern

al m

emor

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nd m

emor

y-ad

dres

sabl

e pe

riphe

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pico

Pow

er® T

echn

olog

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w-p

ower

tech

nolo

gy

Slee

p M

odes

Low

-pow

er s

avin

g m

odes

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E, p

ower

-dow

n, p

ower

-sav

e, s

tand

by

and

exte

nded

sta

ndby

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pWal

king

Abilit

y to

put

the

CPU

core

to s

leep

until

a re

levan

t eve

nt o

ccur

s

Focus Product Selector Guide 9

16-b

it M

icro

cont

rolle

rs a

nd d

sPIC

® D

igita

l Sig

nal C

ontr

olle

rs

Prod

uct F

amily

Maximum MIPS

Program Flash Memory (KB)

RAM (KB)

Pin Count

Perip

hera

l Fun

ctio

n Fo

cus

Pack

ages

Inte

llige

nt

Anal

ogW

avef

orm

Con

trol

Tim

ing

and

Mea

sure

men

tsSa

fety

and

M

onito

ring

Com

mun

icat

ion

Use

r In

terf

ace

Secu

re

Dat

aSy

stem

Fle

xibi

lity

ADC resolution1

DAC resolution2

CVref

HS CompOPA/PGASCCPMCCPPWMMC PWMSMPS PWMIC and OC

PWM Resolution (ns)

16-bit Timer

32-bit Timer

RTCC

QEI

LVDWDT/WWDTDMTCRCClass B Safety3

Functional Safety ReadyUSBCANUARTLINIrDA®

I²CSPII2S™SENTParallel Port

LCD (Segments)

GFXCryptographic EngineSecure Key Storage

RNG

Dual Partition FlashCLCPPSPTGDMAIDLE, SLEEP and PMDDOZEXLPVbat

PIC

24 F

amily

PIC

24FJ

64G

A004

1616

–64

4-8

28–4

410

üü

ü62

üü

üü

üL2

üüüüü

üü

üü

TQFP

(PT)

, QFN

(ML)

PIC

24FJ

64G

A104

1632

–64

828

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10ü

üü

15ü

üüü

üL2

üüüüü

üü

üüü

TQFP

(PT)

, QFN

(ML)

PIC

24FJ

64G

B004

1632

–64

828

–44

10ü

üü

15ü

üüü

üL2

üüüüüü

üü

üüü

TQFP

(PT)

, QFN

(ML)

PIC

24FJ

128G

A010

1664

–128

864

–100

10ü

üü

62ü

üü

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üüüüü

üüü

TQFP

(PT)

, QFN

(ML)

PIC

24FJ

256G

A110

1664

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1664

–100

10ü

üü

15ü

üüü

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üüüüü

üü

üü

TQFP

(PT)

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PIC

24FJ

256G

B110

1664

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1664

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10ü

üü

15ü

üüü

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üüüüüü

üü

üü

TQFP

(PT)

, QFN

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PIC

24FJ

128G

A204

1664

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828

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12ü

üü

15ü

üü

üü

üüüü

üüüü

üüüüüü

SPDI

P (S

P), S

OIC

(SO

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OP

(SS)

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FN (M

M),

TQFP

(PT)

, QFN

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PIC

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128G

B204

1664

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828

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12ü

üü

15ü

üü

üü

üü

üüü

üüüü

üüüüüü

SPDI

P (S

P), S

OIC

(SO

), SS

OP

(SS)

, Q

FN (M

M),

TQFP

(PT)

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PIC

24FJ

128G

A310

1664

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864

–100

12üü

üü

15ü

üü

üü

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üüüüü

Up to

480

üüüüüü

TQFP

(PT)

, QFN

(MR)

PIC

24FJ

128G

C01

016

64–1

288

64–1

0016

10üü

üü

15ü

üü

üü

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üüüüüü

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to 4

72ü

üüüüü

TQFP

(PT)

, QFN

(MR)

PIC

24FJ

256D

A210

1612

8–25

624

-96

64–1

0010

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üüüüüü

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üüüü

TQFP

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PIC

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256G

B210

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8–25

696

64–1

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64–1

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(ML)

, XBG

A (B

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T: S

ingl

e-Ed

ge N

ibbl

e Tr

ansm

issio

nSE

NT is

an

unid

irect

iona

l, sin

gle-

wire

ser

ial c

omm

unica

tions

pro

toco

l de

signe

d fo

r poi

nt-to

-poi

nt tr

ansm

issio

n of

sig

nal v

alues

Para

llel P

ort

Gen

eral-

purp

ose

para

llel c

omm

unica

tion

inte

rface

Use

r Int

erfa

ce:

Cap

aciti

ve T

ouch

Sen

sing

and

LC

D C

ontr

ol

LCD

: Li

quid

Cry

stal

Disp

layHi

ghly

inte

grat

ed s

egm

ente

d LC

D co

ntro

ller

GFX

: G

raph

ics C

ontro

ller

High

ly in

tegr

ated

gra

phics

con

trolle

r sup

porti

ng d

irect

inte

rface

with

disp

lay

glas

ses

with

bui

lt-in

ana

log

drive

for i

ndivi

dual

pixe

l con

trol

Secu

re D

ata:

Har

dwar

e-In

tegr

ated

Cry

ptog

raph

ic E

ngin

e

Cry

ptog

raph

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ngin

eIn

depe

nden

t NIS

T-st

anda

rd e

ncry

ptio

n an

d de

cryp

tion

engi

neSe

cure

Key

Sto

rage

Mul

tiple

optio

n fo

r key

sto

rage

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ctio

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anag

emen

tRN

G:

Rand

om N

umbe

r Gen

erat

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rdw

are

true

rand

om n

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r gen

erat

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Syst

em F

lexi

bilit

y: S

yste

m P

erip

hera

ls a

nd In

terc

onne

cts

Dua

l Par

titio

n Fl

ash

Dual

parti

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Flas

h op

erat

ion,

allo

win

g th

e su

ppor

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obus

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tload

er

syst

ems

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fail-

safe

sto

rage

of a

pplic

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n co

de, w

ith o

ptio

ns d

esig

ned

to

enha

nce

code

sec

urity

CLC

: Co

nfigu

rabl

e Lo

gic

Cell

Inte

grat

ed c

ombi

natio

nal a

nd s

eque

ntial

logi

c w

ith c

usto

m in

terc

onne

ctio

n an

d re

-rout

ing

of d

igita

l per

iphe

rals

PPS:

Per

iphe

ral P

in S

elect

I/O p

in re

map

ping

of d

igita

l per

iphe

rals

for g

reat

er d

esig

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xibilit

y an

d im

prov

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MI b

oard

layo

ut

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: Pe

riphe

ral T

rigge

r Gen

erat

orUs

er-p

rogr

amm

able

sequ

ence

r, ca

pabl

e of

gen

erat

ing

com

plex

trig

ger s

igna

l se

quen

ces

to c

oord

inat

e th

e op

erat

ion

of o

ther

per

iphe

rals

DM

A: D

irect

Mem

ory

Acce

ssDi

rect

mem

ory

acce

ss fo

r tra

nsfe

r of d

ata

betw

een

the

CPU

and

its

perip

hera

ls w

ithou

t CPU

ass

istan

ceID

LE, S

LEEP

and

PM

DLo

w-p

ower

sav

ing

mod

es

DO

ZEAb

ility

to ru

n th

e CP

U co

re s

low

er th

an th

e sy

stem

clo

ck u

sed

by th

e in

tern

al pe

riphe

rals

XLP:

eXt

rem

e Lo

w P

ower

Tec

hnol

ogy

XLP

tech

nolo

gy d

evice

s w

ith e

xtre

me

low

-pow

er o

pera

tion

mod

es fo

r ba

ttery

/low

-pow

er a

pplic

atio

ns

Vbat

Hard

war

e-ba

sed

pow

er m

ode

that

main

tain

s on

ly th

e m

ost c

ritica

l ope

ratio

ns

whe

n a

pow

er lo

ss o

ccur

s on

Vdd

16-b

it M

CU

s an

d D

SCs

Term

inol

ogy

www.microchip.com12

Note

1: U

SART

s w

ith S

PI m

ode

are

take

n in

to a

ccou

nt N

ote

2: D

RAM

Mem

ory

Supp

ort:

PIC3

2MZ

DA w

ith D

DR2

(32

MB

embe

dded

or 1

28 M

B ex

tern

al); S

AM S

7x/E

7x/V

7x w

ith S

DRAM

(ext

erna

l) Not

e 3:

Aut

omot

ive G

rade

Dev

ices

Note

4: T

erm

inol

ogy

in fo

llow

ing

tabl

e

Note

5: S

AM C

20/C

21 a

re tr

ue 5

V de

vices

; SAM

C21

also

com

es w

ith 3

x 16

-bit

Delta

-Sig

ma

ADC

*: Va

riant

s w

ith U

SB fu

nctio

n +:

Var

iants

with

CAN

func

tion

32-b

it M

icro

cont

rolle

r Qui

ck R

efer

ence

Gui

de

Prod

uct

Fam

ily

Core

Max. Operation Freq. (MHz)

Program Flash Memory (KB)

RAM (KB)

Pin Count

Perip

hera

l Fun

ctio

n Fo

cus

Inte

llige

nt A

nalo

gW

avef

orm

C

ontr

olTi

min

g an

d M

easu

rem

ents

Safe

ty a

nd

Mon

itorin

gC

omm

unic

atio

nU

ser I

nter

face

Secu

rity

Syst

em

Flex

ibili

ty

Packages

ADC (channels/bits)

ADC Speed (sps)

DAC (channels/bits)

Analog Comparator (+Op Amp)

Output Compare Channels

Input Capture ChannelsPWM Channels

16-bit/32-bit Timer

TCC (24-bit Control Timer) (4)

Motor Interface (QEI/QDEC) (4)

Watchdog Timer DMT (Dead Man Timer) (4)

Class B Safety/DSU/Touch SafetyFunctional Safety Support (ASILB , SIL2) (4)

USB (FS/HS) + PHY (Transceiver)

CAN (2.0B or FD)Ethernet (10/100)SERCOM/FLEXCOM (4)USART/UART I²CSPI (1)

SDIO/SD/eMMCCMOS Camera InterfaceSQI/QSPIAudio CODEC (I2S) (4)

Peripheral Bus Interface PMP/EBI (bus width, bit) (4)

Touch PTC (channels)/Driven Shield + (4)

Segment/Graphics LCD Controller

LCD/GFX Interface (PMP/EBI)

Crypto Engine (AES. SHA, ECC, RSA/DSA, TRNG)

TrustZone (4)

Secure Boot (4)

TrustRAM (Bytes) (4)

DataFlash (KB) (4)

Tamper DetectionSecure Key ProvisioningKinibi-M SDK SupportDual Panel/Bank Flash (4)

Intelligent Low Power Peripheral Event System (channels) (4)

DMA (channels)CLC/CCL (4)

PIC

32

PIC

32M

M

GPL

micr

oApt

iv25

16-6

44-

820

-36

14/1

220

0k1/5

23

38

7/3

W2

22

üSS

OP,

SO

IC, S

PDIP,

QFN

, UQ

FN, V

QFN

PIC

32M

M

GPM

*m

icroA

ptiv

2564

-25

616

-32

28-

6424

/12

200k

1/53

99

2421

/9W

1F+P*

33

33

4ü

SSO

P, S

OIC

, SPD

IP, Q

FN,

UQFN

, VQ

FNPI

C32

MX

1/2*

/5*+

M4K

5016

-51

24-

6428

-10

048

/10

1M3

55

55/

2W

B1F+

P*1+

52

44

P16P

4SO

IC, S

SOP,

SPD

IP, Q

FN,

VTLA

, TQ

FP, T

FBG

A*PI

C32

MX

1/2

XLP

M4K

7212

8-25

632

-64

28-

4413

/10

1M3

55

55/

2W

+DB

1F+P

22

22

P12P

4SO

IC, Q

FN, T

QFP

PIC

32M

X 3/

4*M

4K12

032

-51

216

-12

864

-12

416

/10

1M2

55

55/

2W

B1F+

P*5

22

2P16

P4

TQFP

, QFN

, TFB

GA,

VTL

A

PIC

32M

X 5

M4K

8064

-51

216

-64

64-

100

16/1

01M

25

55

5/2

WB

1F+P

16

54

P16P

8Q

FN, T

QFP

, TFB

GA,

VTL

A

PIC

32M

X 6

M4K

8064

-51

232

-12

864

-10

016

/10

1M2

55

55/

2W

B1H+

P1

65

4P16

P8

QFN

, TQ

FP, T

FBG

A, V

TLA

PIC

32M

X 7

M4K

8012

8-51

232

-12

864

-10

016

/10

1M2

55

55/

2W

B1F+

P2

16

54

P16P

8Q

FN, T

QFP

, TFB

GA,

VTL

A

PIC

32M

K G

P/M

Cm

icroA

ptiv

120

512-

1024

128-

256

64-

100

42/1

216

M3/1

25O

412

1616

14/1

6E

W+D

B2F+

P4

66

6P24

Pü

13Q

FN, T

QFP

PIC

32M

Z EF

(3)

M-C

lass

252

512-

2048

128-

512

64-

144

48/1

218

M2

99

99/

4W

+DB

1H+P

21

65

6ü

6P/

E24P+

EA,

S,T

ü18

QFN

, TQ

FP, T

FBG

A, V

TLA,

LQ

FPPI

C32

MZ

DA

(2)

micr

oApt

iv20

010

24-

2048

256-

640

169-

288

45/1

218

M2

99

99/

4W

+DB

1H+P

21

65

61

ü6

P/E24

GP+

EA,

S,T

ü26

LFBG

A, L

QFP

SAM

SAM

D09

CM0+

488-

164

14-

2410

/12

350k

63

42/

1W

B2

22

26

6Q

FN, S

OIC

SAM

D10

CM0+

488-

164

14-

2410

/12

350k

1/10

26

312

2/1

1W

B+T

33

33

P726

6Q

FN, S

OIC

, WLC

SP

SAM

D11

CM0+

4816

414

-24

10/1

235

0k1/1

02

63

122/

11

WB+

T1F+

P3

33

3P72

66

QFN

, SO

IC, W

LCSP

SAM

D20

CM0+

4816

-25

62-

3232

-64

20/1

235

0k1/1

02

168

165/

2W

B+T

66

66

P256

8TQ

FP, Q

FN, W

LCSP

, UF

BGA

SAM

D21

CM0+

4832

-25

64-

3232

-64

20/1

235

0k1/1

02

188

245/

23

WB+

TA+

S1F+

P6

66

61

P256

1212

TQFP

, QFN

, WLC

SP,

UFBG

A

SAM

D21

LCM

0+48

32-6

44-

832

-48

18/1

235

0k1/1

04

1813

245/

23

WB+

T5

55

512

12TQ

FP, Q

FN

SAM

DA1

(3)

CM0+

4816

-64

4-8

32-

6420

/12

350k

1/10

218

824

5/2

3W

B+T

A1F+

P6

66

61

P256

128

TQFP

, QFN

SAM

L10

CM23

3216

-64

4-16

24-

3210

/12

1M1/1

02O

36

66

3/1

WB+

T3

33

3P10

0, D

+T

ü25

62ü

88ü

SSO

P, W

LCSP

, VQ

FN,

TQFP

SAM

L11

CM23

3216

-64

8-16

24-

3210

/12

1M1/1

02O

36

66

3/1

WB+

T3

33

3P10

0, D

+A,

S,T

üüü

256

2üü

88ü

SSO

P, W

LCSP

, VQ

FN,

TQFP

SAM

L11

-KP

HCM

2332

32-6

48-

1624

-32

10/1

21M

1/10

2O3

66

63/

1W

B+T

33

33

P100,

D+

A,S,

Tüüü

256

2üüü

88ü

VQFN

, TQ

FP

Focus Product Selector Guide 13

32-b

it M

icro

cont

rolle

r Qui

ck R

efer

ence

Gui

de

Prod

uct

Fam

ily

Core

Max. Operation Freq. (MHz)

Program Flash Memory (KB)

RAM (KB)

Pin Count

Perip

hera

l Fun

ctio

n Fo

cus

Inte

llige

nt A

nalo

gW

avef

orm

C

ontr

olTi

min

g an

d M

easu

rem

ents

Safe

ty a

nd

Mon

itorin

gC

omm

unic

atio

nU

ser I

nter

face

Secu

rity

Syst

em

Flex

ibili

ty

Packages

ADC (channels/bits)

ADC Speed (sps)

DAC (channels/bits)

Analog Comparator (+Op Amp)

Output Compare Channels

Input Capture ChannelsPWM Channels

16-bit/32-bit Timer

TCC (24-bit Control Timer) (4)

Motor Interface (QEI/QDEC) (4)

Watchdog Timer DMT (Dead Man Timer) (4)

Class B Safety/DSU/Touch SafetyFunctional Safety Support (ASILB , SIL2) (4)

USB (FS/HS) + PHY (Transceiver)

CAN (2.0B or FD)Ethernet (10/100)SERCOM/FLEXCOM (4)USART/UART I²CSPI (1)

SDIO/SD/eMMCCMOS Camera InterfaceSQI/QSPIAudio CODEC (I2S) (4)

Peripheral Bus Interface PMP/EBI (bus width, bit) (4)

Touch PTC (channels)/Driven Shield + (4)

Segment/Graphics LCD Controller

LCD/GFX Interface (PMP/EBI)

Crypto Engine (AES. SHA, ECC, RSA/DSA, TRNG)

TrustZone (4)

Secure Boot (4)

TrustRAM (Bytes) (4)

DataFlash (KB) (4)

Tamper DetectionSecure Key ProvisioningKinibi-M SDK SupportDual Panel/Bank Flash (4)

Intelligent Low Power Peripheral Event System (channels) (4)

DMA (channels)CLC/CCL (4)

SAM

SAM

L21

CM0+

4832

-25

64-

3232

-64

20/1

21M

2/12

2O3

248

245/

22

WB+

TS

1F+P

66

66

P169

A,T

1216ü

TQFP

, QFN

, WLC

SP

SAM

L22

CM0+

3264

-25

68-

3248

-10

020

/12

1M2

128

124/

21

WB+

T1F+

P6

66

6P25

6S32

0A,

Tü

816ü

TQFP

, QFN

, WLC

SP,

UFBG

A

SAM

C20

CM0+

4832

-25

64/

3232

-64

12/1

21M

214

618

5/2

2W

B+T

A4

44

4P25

66

6ü

TQFP

, QFN

, WLC

SP

SAM

C21

(5)

CM0+

4832

-25

64-

3232

-10

020

/12

1M1/1

04

188

245/

22

WB+

TA

2FD8

88

8P25

612

12ü

TQFP

, QFN

, WLC

SP

SAM

4NCM

410

051

2-10

2464

-80

48-

100

16/1

051

0k1/1

018

124

2/-

DW

3/4

34

23LQ

FP, T

FBG

A, V

FBG

A,

QFN

SAM

4SCM

412

012

8-20

4864

-16

048

-10

016

/12

1M2/1

21

1812

42/

-D

W1F+

P2/

22

31ü

1E24

Eü

1422

LQFP

, TFB

GA,

VFB

GA,

Q

FN, W

LCSP

SAM

4ECM

4F12

051

2-10

2412

810

0-14

424

/12

300k

2/12

124

184

-/3D

W1F+

P2

12/

22

31ü

E24E

Aü

33LF

BGA,

TFB

GA,

LQ

FP

SAM

4LCM

448

128-

512

32-

6448

-10

016

/12

300k

1/10

418

125

2/-

W1F+

P4/

14

5ü

1P32

S160

A,T

416

LQFP

, WLC

SP

SAM

GCM

4F12

025

6-51

264

-17

649

-10

08/1

250

0k6

66

2/-

W1F+

P8

88

82

ü6

30LQ

FP, Q

FN, W

LCSP

SAM

D5x

CM4F

120

256-

1024

128-

256

64-

128

32/1

21M

2/12

225

1624

8/4

2D

WB+

T1F+

P8

88

82üü

1P25

6A,

S,E,

R,T

üü

3232ü

TQFP

, QFN

, W

LCSP

SAM

E5x

CM4F

120

256-

1024

128-

256

64-

128

32/1

21M

2/12

225

1624

8/4

2D

WB+

T1F+

P2FD

18

88

82üü

1P25

6A,

S,E,

R,T

üü

3232ü

TQFP

, QFN

SAM

S7x

(2)

CM7

300

512-

2048

256-

384

64-

144

24/1

21.

7M2/1

21

4424

84/

-D

W1H+

P3/

53

51üü

2E24

EA,

S,T

ü12

24LQ

FP, L

FBG

A, T

FBG

A,

UFBG

A, V

FBG

A, Q

FN

SAM

E7x

(2)

CM7

300

512-

2048

256-

384

64-

144

24/1

21.

7M2/1

21

4424

84/

-D

W1H+

P2FD

13/

53

51üü

2E24

EA,

S,T

ü12

24LQ

FP, L

FBG

A, T

FBG

A,

UFBG

A

SAM

V7x

(2) (

3)CM

730

051

2-20

4825

6-38

464

-14

424

/12

1.7M

2/12

144

248

4/-

DW

1H+P

2FD1

3/5

35

1üü

2E24

EA,

S,T

ü12

24LQ

FP, T

FBG

A, L

FBG

A

Note

1: U

SART

s w

ith S

PI m

ode

are

take

n in

to a

ccou

nt N

ote

2: D

RAM

Mem

ory

Supp

ort:

PIC3

2MZ

DA w

ith D

DR2

(32

MB

embe

dded

or 1

28 M

B ex

tern

al); S

AM S

7x/E

7x/V

7x w

ith S

DRAM

(ext

erna

l) Not

e 3:

Aut

omot

ive G

rade

Dev

ices

Note

4: T

erm

inol

ogy

in fo

llow

ing

tabl

e

Note

5: S

AM C

20/C

21 a

re tr

ue 5

V de

vices

; SAM

C21

also

com

es w

ith 3

x 16

-bit

Delta

-Sig

ma

ADC

*: Va

riant

s w

ith U

SB fu

nctio

n +:

Var

iants

with

CAN

func

tion

www.microchip.com14

Tim

ing

and

Mea

sure

men

ts: S

igna

l Mea

sure

men

t With

Tim

ing

and

Cou

nter

Con

trol

TCC

: Tim

er/C

ount

ers

for C

ontro

lSe

lecte

d SA

M p

rodu

cts

have

TCC

s fo

r app

licat

ions

like

Switc

h M

ode

Pow

er S

uppl

ies

(SM

PS),

light

ing

and

mot

or c

ontro

l. Th

e TC

Cs s

uppo

rt up

to 9

6 M

Hz a

nd 2

4-bi

t res

olut

ion.

QEI

: Qua

drat

ure

Enco

der

Inte

rface

Q

DEC

: Qua

drat

ure

Dec

oder

QEI

to in

crem

ent e

ncod

ers

for o

btain

ing

mec

hani

cal p

ositio

n da

ta ty

pica

l for

aut

omat

ion

or

mot

or c

ontro

l app

lictio

ns. Q

DEC

per

form

s th

e in

put l

ines

filte

ring,

dec

odin

g of

qua

drat

ure

signa

ls an

d co

nnec

ts to

the

timer

s/co

unte

rs in

ord

er to

read

the

posit

ion

and

spee

d of

the

mot

or th

roug

h th

e us

er in

terfa

ce.

Com

mun

icat

ions

: Gen

eral

, Ind

ustri

al, L

ight

ing

and

Auto

mot

ive

SERC

OM

: Ser

ial C

omm

unic

atio

n M

odul

e

The

SERC

OM

is s

oftw

are

that

is c

onfig

urab

le to

ope

rate

as

I²C, S

PI o

r USA

RT, g

iving

yo

u ex

tend

ed fl

exib

ility

to m

ix se

rial in

terfa

ces

and

grea

ter f

reed

om in

PCB

layo

ut. E

ach

SERC

OM

inst

ance

can

be

assig

ned

to d

iffere

nt I/

O p

ins

thro

ugh

I/O m

ultip

lexin

g, fu

rther

in

crea

sing

vers

atilit

y.

I2S:

Inte

r-IC

Sou

nd C

ontro

ller

The

Inte

r-IC

Soun

d Co

ntro

ller p

rovid

es a

bid

irect

iona

l, sy

nchr

onou

s di

gita

l aud

io lin

k w

ith

exte

rnal

audi

o de

vices

.

PMP:

Par

alle

l Mas

ter P

ort

EBI:

Exte

rnal

Bus

Inte

rface

PMP/

EBI p

rovid

e a

high

-spe

ed a

nd c

onve

nien

t int

erfa

ce to

ext

erna

l par

allel

mem

ory

devic

es, g

raph

ic LC

Ds a

nd c

amer

a se

nsor

s.

Safe

ty a

nd M

onito

ring:

Har

dwar

e M

onito

ring

and

Faul

t Det

ectio

n

DM

T: D

ead

Man

Tim

erTh

e pr

imar

y fu

nctio

n of

the

DMT

is to

rese

t the

pro

cess

or in

the

even

t of a

sof

twar

e m

alfun

ctio

n. A

DM

T is

typi

cally

use

d in

miss

ion-

critic

al an

d sa

fety

critic

al ap

plica

tions

, whe

re

any

singl

e fa

ilure

of a

sof

twar

e fu

nctio

nality

and

seq

uenc

ing

mus

t be

dete

cted

.

Func

tiona

l Saf

ety

Supp

ort

Selec

t 32-

bit M

CUs

supp

ort s

afet

y cr

itical

appl

icatio

ns e

nabl

ing

hous

ehol

d ap

plian

ces

with

Cl

ass

B ba

sed

on IE

C607

30 ,

indu

stria

l app

licat

ions

with

SIL

2 b

ased

on

the

IEC6

1508

and

au

tom

otive

with

ASI

L B

base

d on

the

ISO

2626

2 st

anda

rds.

Use

r Int

erfa

ce: C

apac

itive

Tou

ch S

ensi

ng a

nd L

CD

Con

trol

PTC

: Per

iphe

ral T

ouch

Con

trolle

r

An e

mbe

dded

per

iphe

ral t

ouch

con

trolle

r mak

es it

eas

y to

add

cap

acitiv

e to

uch

sens

ing

to y

our p

rojec

t with

but

tons

, slid

ers,

whe

els a

nd p

roxim

ity. B

y off

erin

g su

perb

sen

sitivi

ty

and

noise

toler

ance

as

well

as

self-

calib

ratio

n, th

e PT

C eli

min

ates

the

need

for e

xter

nal

com

pone

nts

and

min

imize

s CP

U ov

erhe

ad. T

he P

TC s

uppo

rts u

p to

256

cha

nnels

on

64-

pin

devic

es, 1

20 c

hann

els o

n 64

-pin

dev

ices

and

60 c

hann

els o

n 32

-pin

dev

ices.

PTC

with

Dr

iven

Shiel

d +

can

achi

eve

bette

r noi

se im

mun

ity a

nd m

oist

ure

toler

ance

.

Syst

em F

lexi

bilit

y: S

yste

m P

erip

hera

ls a

nd In

terc

onne

cts

CLC

/CC

L: C

onfig

urab

le C

usto

m

Logi

c

The

CCL

is a

prog

ram

mab

le lo

gic

perip

hera

l whi

ch c

an b

e co

nnec

ted

to th

e de

vice

pins

, eve

nts

or to

oth

er in

tern

al pe

riphe

rals.

Thi

s all

ows

you

to e

limin

ate

logi

c ga

tes

for s

impl

e gl

ue lo

gic

func

tion

on th

e PC

B.

EVSY

S: E

vent

Sys

tem

The

Even

t Sys

tem

allo

ws

auto

nom

ous,

low

-late

ncy

and

confi

gura

ble

com

mun

icatio

n be

twee

n pe

riphe

rals.

Sev

eral

perip

hera

ls ca

n be

con

figur

ed to

gen

erat

e an

d/or

resp

ond

to s

igna

ls kn

own

as e

vent

s. C

omm

unica

tion

is m

ade

with

out C

PU

inte

rven

tion

and

with

out c

onsu

min

g sy

stem

reso

urce

s su

ch a

s Bu

s or

RAM

ba

ndw

idth

. Thi

s re

duce

s th

e lo

ad o

n th

e CP

U an

d ot

her s

yste

m re

sour

ces,

co

mpa

red

to a

trad

itiona

l inte

rrupt

-bas

ed s

yste

m.

Dua

l Pan

el/B

ank

Flas

hDu

al Ba

nk F

lash

allow

s liv

e fie

ld fi

rmw

are/

prog

ram

upd

ate

on o

ne b

ank

whi

le CP

U ca

n co

ntin

ue e

xecu

ting

code

from

ano

ther

Flas

h ba

nk.

Secu

rity:

Chi

p-Le

vel S

ecur

ity, C

rypt

o Ac

cele

ratio

n, S

ecur

e Ke

y Pr

ovis

ioni

ng a

nd S

tora

ge a

nd T

ampe

r Det

ectio

n

Trus

tZon

eTr

ustZ

one®

for A

RMv8

-M p

rovid

es h

ardw

are-

enfo

rced

sec

urity

isol

atio

n be

twee

n tru

sted

and

the

untru

sted

reso

urce

s on

a C

orte

x™-M

23 b

ased

dev

ice, w

hile

main

tain

ing

the

efficie

nt e

xcep

tion

hand

ling.

Trus

tRAM

Trus

tRAM

pro

vides

sec

ure

key

stor

age

again

st s

oftw

are

atta

cks

and

can

resis

t m

icrop

robi

ng. I

t also

pre

vent

s da

ta re

man

ence

and

facil

itate

s ra

pid

eras

e on

tam

per

even

t.

Dat

aFla

shDa

taFl

ash

prov

ides

sec

ure

key

stor

age

again

st s

oftw

are

atta

cks.

It a

lso a

llow

s da

ta

scra

mbl

ing

and

facil

itate

s ra

pid

eras

e on

tam

per e

vent

.

Secu

re B

oot

Secu

re B

oot a

uthe

ntica

tes

the

Flas

h co

nten

t at s

tartu

p an

d en

sure

s th

e de

sired

cod

e is

exec

uted

.

Kini

bi-M

A m

odul

ar s

ecur

e ap

plica

tion

deve

lopm

ent f

ram

ewor

k th

at m

akes

impl

emen

tatio

n of

se

curit

y sim

ple.

32-b

it M

CU

s Te

rmin

olog

y

Dev

elop

men

t Too

lsPI

C32

and

SAM

Pro

duct

sTo

olD

escr

iptio

n

MPL

AB® X

IDE

MPL

AB® X

is th

e Int

egra

ted

Deve

lopm

ent E

nviro

nmen

t (ID

E) fo

r dev

elopin

g an

d de

bugg

ing P

IC32

an

d SA

M M

CU a

nd M

PU a

pplic

ation

s, in

addit

ion to

Micr

ochip

s 8- a

nd 1

6-bit

Micr

ocon

trolle

rs. It

is

base

d on

the

open

-sou

rce

NetB

eans

IDE

from

Ora

cle a

nd ru

ns u

nder

Wind

ows®

, Mac

OS®

and

Lin

ux®, a

nd c

onne

cts s

eam

lessly

to a

rang

e of

deb

ugge

rs, p

rogr

amm

ers a

nd d

evelo

pmen

t kits

.

MPL

AB H

arm

ony

Con

figur

ator

The

MPL

AB H

arm

ony

Confi

gura

tor (

MHC

) is a

tim

e-sa

ving

hard

war

e co

nfigu

ratio

n ut

ility

for

MPL

AB H

arm

ony,

Micr

ochi

p's

awar

d w

inni

ng s

oftw

are

fram

ewor

k. D

evelo

pers

use

MHC

to

get v

isual

unde

rsta

ndin

g an

d co

ntro

l of t

he c

onfig

urat

ion

of th

eir ta

rget

dev

ice a

nd a

pplic

atio

n.

MHC

is a

fully

inte

grat

ed to

ol w

ithin

MPL

AB X

IDE.

MPL

AB H

arm

ony

Softw

are

Fram

ewor

k

MPL

AB H

arm

ony i

s a fle

xible,

abs

tract

ed, f

ully i

nteg

rate

d firm

ware

dev

elopm

ent p

latfo

rm fo

r PIC

32

and

SAM

micr

ocon

trolle

rs a

nd M

PUs.

It tak

es k

ey e

lemen

ts o

f mod

ular a

nd o

bject

orie

nted

des

ign,

adds

in th

e fle

xibilit

y to

use

a Re

al-Tim

e Op

erat

ing S

yste

m (R

TOS)

or w

ork

with

out o

ne. M

PLAB

Ha

rmon

y pro

vides

a fr

amew

ork

of so

ftwar

e m

odule

s tha

t are

eas

y to

use,

con

figur

able

for y

our

spec

ific n

eeds

, and

in a

form

at th

at a

llows

for m

axim

um re

-use

and

redu

ces t

ime

to m

arke

t.

MPL

AB H

arm

ony

Gra

phic

s Su

ite

MPL

AB H

arm

ony

Gra

phics

Sui

te is

Micr

ochi

p's

indu

stry

-lead

ing

grap

hics

tool

set f

or P

IC32

an

d SA

M M

icroc

ontro

llers

and

MPU

s. P

rovid

ing

a fu

lly-in

tegr

ated

eas

y to

use

WYS

IWYG

ed

itor,

grap

hics

ass

et m

anag

emen

t and

cod

e ge

nera

tor w

ithin

the

MPL

AB H

arm

ony

fram

ewor

k, th

e su

ite a

llow

s yo

u to

go

from

con

cept

to g

lass

in m

inut

es w

ithou

t writ

ing

a sin

gle

line

of c

ode.

Add

itiona

lly th

e in

tegr

ated

Disp

lay M

anag

er p

lug-

in e

nabl

es q

uick

sup

port

for n

ew a

nd u

nsup

porte

d di

splay

s in

MPL

AB H

arm

ony.

Touc

h In

terfa

ceM

PLAB

Har

mon

y su

ppor

ts b

oth

capa

citive

and

resis

tive

touc

h. W

ith a

utom

atic

gene

ratio

n an

d co

nfigu

ratio

n of

eve

nt h

andl

ers

for t

ouch

eve

nts,

it a

llow

s qu

ick d

evelo

pmen

t of t

ouch

en

abled

gra

phics

sol

utio

ns.

Dat

a Vi

sual

izer

Trac

k an

d pr

ofile

your

app

licat

ions

run-

time

beha

vior u

sing

the

pow

erfu

l Dat

a Vi

suali

zer.

It pr

ovid

es a

n os

cillo

scop

e vie

w o

f sig

nals

such

as

GPI

O, S

PI, U

ART,

etc.

The

Dat

a Vi

suali

zer

also

prov

ides

live

pow

er m

easu

rem

ents

whe

n us

ed to

geth

er w

ith a

sup

porte

d pr

obe

or b

oard

, su

ch a

s th

e po

wer

deb

ugge

r. Pr

ofilin

g yo

ur a

pplic

atio

ns p

ower

usa

ge h

as n

ever

bee

n ea

sier.

SAM

Pro

duct

sTo

olD

escr

iptio

n

Atm

el S

tudi

o 7

Atm

el St

udio

7 is

the

Inte

grat

ed D

evelo

pmen

t Plat

form

(IDP

) for

dev

elopi

ng a

nd d

ebug

ging

AVR

®

and

Arm

®-b

ased

SAM

MCU

app

licat

ions

. Atm

el St

udio

7 p

rovid

es y

ou w

ith a

sea

mles

s ea

sy-

to-u

se e

nviro

nmen

t to

deve

lop

and

debu

g ap

plica

tions

writ

ten

in C/

C++

or a

ssem

bly

code

. It

conn

ects

sea

mles

sly to

a ra

nge

of d

ebug

gers

, pro

gram

mer

s an

d de

velo

pmen

t kits

.

Atm

el S

TART

Atm

el ST

ART

is an

inno

vativ

e on

line

tool

for i

ntui

tive,

gra

phica

l con

figur

atio

n an

d de

ploy

men

t of

em

bedd

ed s

oftw

are.

It le

ts y

ou s

elect

and

con

figur

e so

ftwar

e co

mpo

nent

s, d

river

s an

d m

iddl

ewar

e, a

s w

ell a

s de

ploy

com

plet

e ex

ampl

e pr

ojec

ts ta

ilore

d to

the

need

s of

you

r ap

plica

tion.

Atm

el ST

ART

is co

mpl

etely

plat

form

inde

pend

ent,

and

able

to g

ener

ate

proj

ect fi

les

for a

num

ber o

f IDE

s. T

he c

onfig

urat

ion

engi

ne le

ts y

ou re

view

dep

ende

ncies

bet

wee

n so

ftwar

e co

mpo

nent

s an

d av

ailab

le ha

rdw

are

reso

urce

s in

the

selec

ted

MCU

, and

aut

omat

ically

sug

gest

s so

lutio

ns to

any

con

flicts

that

in y

our c

hose

n se

tup.

ASF

Softw

are

Fram

ewor

k fo

r SA

M

ASF

prov

ides

sof

twar

e dr

ivers

and

libra

ries

to b

uild

app

licat

ions

for A

VR a

nd S

AM d

evice

s. It

is

arch

itect

ed fo

r rea

dabi

lity a

nd p

erfo

rman

ce, a

nd c

onta

ins

a nu

mbe

r of a

dvan

ced

mid

dlew

are

com

pone

nts

for 3

2-bi

t SAM

dev

ices

such

as

USB

devic

e, T

CP/IP

, Wi-F

i, RT

OS

kern

el (F

reeR

TOS)

, Blu

etoo

th, fi

le sy

stem

and

mor

e.

Dat

a Vi

sual

izer

Trac

k an

d pr

ofile

your

app

licat

ions

run-

time

beha

vior u

sing

the

pow

erfu

l Dat

a Vi

suali

zer.

It pr

ovid

es a

n os

cillo

scop

e vie

w o

f sig

nals

such

as

GPI

O, S

PI, U

ART,

etc

. The

Dat

a Vi

suali

zer a

lso

prov

ides

live

pow

er m

easu

rem

ents

whe

n us

ed to

geth

er w

ith a

sup

porte

d pr

obe

or b

oard

, suc

h as

the

pow

er d

ebug

ger.

Profi

ling

your

app

licat

ions

pow

er u

sage

has

nev

er b

een

easie

r.

QTo

uch®

C

ompo

ser

The

QTo

uch

Com

pose

r allo

ws

you

to s

eam

lessly

dev

elop

capa

citive

touc

h fu

nctio

nality

for y

our

appl

icatio

n. T

his

simpl

ifies

the

desig

n pr

oces

s by

tyin

g to

geth

er th

e to

ols

requ

ired

to e

dit t

he

code

in S

tudi

o 7

and

tune

the

touc

h de

sign

in Q

Touc

h Co

mpo

ser.

Focus Product Selector Guide 15

32-b

it M

icro

proc

esso

rs

Prod

uct

Cor

e Su

b-Sy

stem

Mem

ory

Con

nect

ivity

Use

r Int

erfa

ceSe

curit

yC

ontr

ol

Extended Temperature Range (–40 to 105°C Ambient)

Packages

Core

VFPU/NEON/Trustzone

Clock Speed (MHz)*

Core Operating Voltage

SRAM (KB)

L1 Cache Memory (KB) (Instruction/Data)

L2 Cache (KB)

LPSDR/SDRAM

QSPI Interface

DDR2/LPDDR/LPDDR2

DDR3/DDR3L/LPDDR3

DDR Bus Width 16/32

NAN

D

UARTSPITWI (I²C)SSC (and I2S)CAN

USB

Ethe

rnet

SD/eMMC

Class D/PDM/Audio PLL

Max I/O Pins

Graphic LCD

LCD Overlay

Resistive (R) and/or PCAP (P) Touchscreen

Hardware Video Decoder

Camera Interface

Security Level

Secure Boot

Anti-Tamper Pins

Environmental Monitors

32-bit Timers

PWM Channels

10-bit ADC Channels

12-bit ADC Channels

SLC ECC (bit)

MLC ECC (bit)

Device Only

Device and Host

Host Only

10/100 Ethernet MAC10/100/1000 MACIEEE 1588 Support

ATSA

MA5

ATSA

MA5

D21

Co

rtex®

-A5

1/1/

150

01.

2V12

82

× 32

128

–2

1/1/

11/

1/1

1632

329

66

4–

–1

HS1

HS1

–Y

11/

1/1

721

YR

–1

Adv.

Y6

–5

4–

12–

BGA

196,

11

× 11

, 0.

75 m

m p

itch

ATSA

MA5

D22

Co

rtex-

A51/

1/1

500

1.2V

128

2 ×

3212

8–

21/

1/1

1/1/

116

3232

96

64

1–

1 HS

1 HS

1–

Y1

1/1/

172

1Y

R, P

–1

Adv.

Y6

–5

4–

12Y

BGA

196,

11

× 11

, 0.

75 m

m p

itch

ATSA

MA5

D23

Co

rtex-

A51/

1/1

500

1.2V

128

2 ×

3212

8–

21/

1/1

1/1/

116

3232

96

64

1–

1 HS

1 HS

1–

Y1

1/1/

172

1Y

R, P

–1

PCI P

re-

certi

fied

Y6

Y5

4–

12Y

BGA

196,

11

× 11

, 0.

75 m

m p

itch

ATSA

MA5

D24

Co

rtex-

A51/

1/1

500

1.2V

128

2 ×

3212

8–

21/

1/1

1/1/

132

3232

107

74

––

1 HS

1 HS

, 1

HSIC

1–

Y2

1/1/

110

51

YR,

P–

1M

ed.

Y2

–6

4–

12–

BGA

256,

8 ×

8,

0.4

mm

pitc

hAT

SAM

A5D

26

Corte

x-A5

1/1/

150

01.

2V12

82

× 32

128

–2

1/1/

11/

1/1

3232

3210

77

4–

–1

HS1

HS1

–Y

21/

1/1

128

1Y

R–

1Ad

v.Y

8–

64

–12

YBG

A 28

9, 1

4 ×

14,

0.8

mm

pitc

hAT

SAM

A5D

27

Corte

x-A5

1/1/

150

01.

2V12

82

× 32

128

–2

1/1/

11/

1/1

3232

3210

77

42

–1

HS1

HS,

1 HS

IC1

–Y

21/

1/1

128

1Y

R, P

–1

Adv.

Y8

–6

4–

12Y

BGA

289,

14

× 14

, 0.

8 m

m p

itch

ATSA

MA5

D28

Co

rtex-

A51/

1/1

500

1.2V

128

2 ×

3212

8–

21/

1/1

1/1/

132

3232

107

74

2–

1 HS

1 HS

, 1

HSIC

1–

Y2

1/1/

112

81

YR,

P–

1PC

I Pre

-ce

rtifie

dY

8Y

64

–12

YBG

A 28

9, 1

4 ×

14,

0.8

mm

pitc

h

ATSA

MA5

D31

Corte

x-A5

1/

–/–

536

1.2V

128

2 ×

32–

––

1/1/

1–

3224

247

63

2–

–1

HS2

HS1

–Y

3–

160

1Y

R–

1M

ed.

Y–

–5

4–

12–

BGA

324,

15

× 15

, 0.

8 m

m p

itch,

BG

A 32

4, 1

2 ×

12,

0.5

mm

pitc

hAT

SAM

A5D

33Co

rtex-

A5

1/–/

–53

61.

2V12

82

× 32

––

–1/

1/1

–32

2424

56

32

––

1 HS

2 HS

–1

Y2

–16

01

YR

–1

Med

.Y

––

54

–12

–BG

A 32

4, 1

5 ×

15,

0.8

mm

pitc

hAT

SAM

A5D

34Co

rtex-

A5

1/–/

–53

61.

2V12

82

× 32

––

–1/

1/1

–32

2424

56

32

2–

1 HS

2 HS

–1

Y3

–16

01

YR

–1

Med

.Y

––

54

–12

–BG

A 32

4, 1

5 ×

15,

0.8

mm

pitc

hAT

SAM

A5D

35Co

rtex-

A5

1/–/

–53

61.

2V12

82

× 32

––

–1/

1/1

–32

2424

76

32

2–

1 HS

2 HS

11

Y3

–16

0–

–R

–1

Med

.Y

––

64

–12

YBG

A 32

4, 1

5 ×

15,

0.8

mm

pitc

hAT

SAM

A5D

36Co

rtex-

A5

1/1/

153

61.

2V12

82

× 32

––

–1/

1/1

–32

2424

76

32

2–

1 HS

2 HS

11

Y3

–16

01

YR

–1

Med

.Y

––

64

–12

YBG

A 32

4, 1

5 ×

15,

0.8

mm

pitc

hAT

SAM

A5D

41Co

rtex-

A5

1/1/

160

01.

8V12

82

× 32

128

––

1/1/

1–

3224

248

84

2–

–1

HS2

HS2

–Y

2–

152

1Y

R–

1Ad

v.Y

8–

94

5–

–BG

A 28

9, 1

4 ×

14,

0.8

mm

pitc

h AT

SAM

A5D

42Co

rtex-

A5

1/1/

160

01.

8V12

82

× 32

128

––

1/1/

1–

3224

248

84

2–

–1

HS2

HS2

–Y

2–

152

1Y

R–

1Ad

v.Y

8–

94

5–

–BG

A 36

1, 1

6 ×

16,

0.8

mm

pitc

h AT

SAM

A5D

43Co

rtex-

A5

1/1/

160

01.

8V12

82

× 32

128

––

1/1/

1–

3224

248

84

2–

–1

HS2

HS2

–Y

2–

152

1Y

R30

fps,

72

0p1

Adv.

Y8

–9

45

––

BGA

289,

14

× 14

, 0.

8 m

m p

itch

ATSA

MA5

D44

Corte

x-A5

1/

1/1

600

1.8V

128

2 ×

3212

8–

–1/

1/1

–32

2424

88

42

––

1 HS

2 HS

2–

Y2

–15

21

YR

30 fp

s,

720p

1Ad

v.Y

8–

94

5–

–BG

A 36

1, 1

6 ×

16,

0.8

mm

pitc

hAT

SAM

A5D

27

C-D

1GCo

rtex-

A51/

1/1

500

1.1V

– 1.

32V

128

32/3

212

8–

212

8–

232

3210

77

2/2

2–

1 HS

1 HS

, 1

HSIC

1–

Y2

1/1/

112

81

YY

–1

Adv.

Y8

–6

4–

12–

BGA

289,

14

× 14

, 0.

8 m

m p

itch

ATSA

MA5

D27

C

-D5M

Corte

x-A5

1/1/

150

01.

1V–

1.32

V12

832

/32

128

–2

64–

232

3210

77

2/2

2–

1 HS

1 HS

, 1

HSIC

1–

Y2

1/1/

112

81

YY

–1

Adv.

Y8

–6

4–

12–

BGA

289,

14

× 14

, 0.

8 m

m p

itch

ATSA

MA5

D28

C

-D1G

Corte

x-A5

1/1/

150

01.

1V–

1.32

V12

832

/32

128

–2

128

–2

3232

107

72/

22

–1

HS1

HS,

1 HS

IC1

–Y

21/

1/1

128

1Y

Y–

1PC

I Pre

-ce

rtifie

dY

8–

64

–12

–BG

A 28

9, 1

4 ×

14,

0.8

mm

pitc

hAT

SAM

A5D

225

C-D

1MCo

rtex-

A51/

1/1

500

1.1V

– 1.

32V

128

32/3

212

8–

216

–2

3232

97

72/

21

–1

HS1

HS1

–Y

21/

1/1

901

YY

–1

Adv.

Y6

–5

4–

12–

BGA

196,

11

× 11

, 0.

75 m

m p

itch

ATSA

MA5

D

27-S

OM

1Co

rtex-

A51/

1/1

500

3.3V

128

32/3

212

8–

112

8–

–8

65

1/1

2–

1 HS

1 HS

, 1

HSIC

1–

Y2

1/1/

110

31

YY

–1

Adv.

Y7

–5

4–

4–

Mod

ule 1

76, 4

0 ×

38, 0

.8 m

m p

itch

SAM

A5D

27C

-LD

1GCo

rtex-

A51/

1/1

500

1.2V

–12

812

82

× 3212

82

1/1/

11/

1/1

3232

107

74

2–

1 HS

1 HS

, 1

HSIC

1–

Y2

1Y

R, C

–1

1/1/

1Ad

v.Y

8–

64

–12

–BG

A 36

1, 1

6 ×

16,

0.8

mm

pitc

h

SAM

A5D

27C

-LD

2GCo

rtex-

A51/

1/1

500

1.2V

–25

612

82

× 3212

82

1/1/

11/

1/1

3232

107

74

2–

1 HS

1 HS

, 1

HSIC

1–

Y2

1Y

R, C

–1

1/1/

1Ad

v.Y

8–

64

–12

–BG

A 36

1, 1

6 ×

16,

0.8

mm

pitc

h

SAM

A5D

28C

-LD

1GCo

rtex-

A51/

1/1

500

1.2V

–12

812

82

× 3212

82

1/1/

11/

1/1

3232

107

74

2–

1 HS

1 HS

, 1

HSIC

1–

Y2

1Y

R, C

–1

1/1/

1PC

I Pre

-ce

rtifie

dY

8Y

64

–12

–BG

A 36

1, 1

6 ×

16,

0.8

mm

pitc

h

SAM

A5D

28C

-LD

2GCo

rtex-

A51/

1/1

500

1.2V

–25

612

82

× 3212

82

1/1/

11/

1/1

3232

107

74

2–

1 HS

1 HS

, 1

HSIC

1–

Y2

1Y

R, C

–1

1/1/

1PC

I Pre

-ce

rtifie

dY

8Y

64

–12

–BG

A 36

1, 1

6 ×

16,

0.8

mm

pitc

h

* Clo

ck s

peed

: Max

. clo

ck s

peed

@ +

85°C

. Not

es: 1

. Tem

pera

ture

Ran

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40°C

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ynch

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supp

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man

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suc

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gen

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7. S

ecur

ity le

vel:

Adv.

= ha

rdw

are

encr

yptio

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gine

+ o

n th

e fly

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enc

rypt

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decr

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secu

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tora

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tam

per p

ins;

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ardw

are

encr

yptio

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gine

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Y =

Yes

9. C

amer

a In

terfa

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or C

MO

S-ty

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age

sens

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TU-R

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rate

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terfa

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put i

s in

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rmat

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er R

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sup

porte

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the

ATSA

MA5

D2 s

eries

. 10.

Gra

phics

LCD

: 24-

bit p

arall

el in

terfa

ce;

supp

orts

STN

and

TFT

disp

lays,

up

to 1

6-bi

ts p

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STN

col

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up

to 1

6M c

olor

s in

TFT

mod

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1. V

ideo

Dec

oder

: Har

dwar

e vid

eo d

ecod

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and

imag

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st p

roce

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g: H

.264

, MPE

G4,

H.2

63, M

PEG

2, J

PEG

, VP8

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eM

MC™

: V4.

3 –

MLC

NAN

D Fl

ash

sup-

porte

d th

roug

h eM

MC

inte

rface

; V4.

5 su

ppor

t for

the

ATSA

MA5

D2 s

eries

. 13.

USB

: Hig

h sp

eed

(HS)

, Ful

l Spe

ed (F

S), H

igh

Spee

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ter-C

hip

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C) 1

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erip

hera

l impl

emen

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n va

ries

amon

g pr

oduc

ts. C

onsu

lt in

divid

ual p

rodu

ct d

atas

heet

s fo

r a d

etail

ed d

escr

iptio

n.

www.microchip.com16

32-b

it M

icro

proc

esso

rs

Prod

uct

Cor

e Su

b-Sy

stem

Mem

ory

Con

nect

ivity

Use

r Int

erfa

ceSe

curit

yC

ontr

ol

Packages

Core

Clock Speed (MHz)*

Core Operating Voltage

SRAM (KB)

L1 Cache Memory (KB) (Instruction/Data)

LPSDR/SDRAM

External Bus Interface

DDR2/LPDDR/LPDDR2

NAN

D

UART

SPI

TWI (I²C)

SSC (I2S)

CAN

USB

Ethernet10/100 Ethernet MAC

SD/eMMC

Soft Modem

Max I/O Pins

Graphic LCD

LCD Overlay

Resistive Touchscreen

Hardware Video Decoder

Camera Interface

Security Level

Secure Boot

16-bit Timers

32-bit Timers

PWM Channels

10-bit ADC Channels

SLC ECC (bit)MLC ECC (bit)

Device Only

Device and Host

Host Only

ATSA

M9

ATSA

M9M

10/

M11

ARM

926E

J-S

400

1.0V

642

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1/1

21/

1/-

1–

56

22

––

1 HS

2 HS

12

–16

01

YY

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Med

. (M

11)

–6

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8BG

A 32

4, 1

5 ×

15, 0

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m p

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ATSA

M9G

45/

G46

ARM

926E

J-S

400

1.0V

642

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1/1

21/

1/-

1–

56

22

––

1 HS

2 HS

12

–16

01

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Med

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46)

–6

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8BG

A 32

4, 1

5 ×

15, 0

.8 m

m p

itch

ATSA

M9X

35AR

M92

6EJ-

S40

01.

0V32

2 ×

161/

11

1/1/

-24

247

53

12

–1

HS1

HS,

1 FS

12

Y10

51

YY

––

––

–6

412

BGA

217,

15

× 15

, 0.8

mm

pitc

h

ATSA

M9X

25AR

M92

6EJ-

S40

01.

0V32

2 ×

161/

11

1/1/

-24

247

63

12

–1

HS1

HS,

1 FS

22

Y10

5–

––

––

––

–6

412

BGA

217,

15

× 15

, 0.8

mm

pitc

h

ATSA

M9G

35AR

M92

6EJ-

S40

01.

0V32

2 ×

161/

11

1/1/

-24

246

53

1–

–1

HS1

HS,

1 FS

12

Y10

51

YY

––

––

–6

412

BGA

217,

15

× 15

, 0.8

mm

pitc

h

ATSA

M9G

25AR

M92

6EJ-

S40

01.

0V32

2 ×

161/

11

1/1/

-24

247

63

1–

–1

HS1

HS,

1 FS

12

Y10

5–

––

–1

––

–6

412

BGA

217,

15

× 15

, 0.8

mm

pitc

h,

BGA

247,

10

× 10

, 0.5

mm

pitc

h

ATSA

M9G

15AR

M92

6EJ-

S40

01.

0V32

2 ×

161/

11

1/1/

-24

245

53

1–

–1

HS1

HS,

1 FS

–2

Y10

51

YY

––

––

–6

412

BGA

217,

15

× 15

, 0.8

mm

pitc

h

ATSA

M9C

N12

ARM

926E

J-S

400

1.0V

322

× 16

1/1

11/

1/-

2424

76

21

–1

FS–

1 FS

–1

–10

51

–Y

––

Med

.Y

6–

412

BGA

217,

15

× 15

, 0.8

mm

pitc

h,

BGA

247,

10

× 10

, 0.5

mm

pitc

h

ATSA

M9C

N11

ARM

926E

J-S

400

1.0V

322

× 16

1/1

11/

1/-

2424

76

21

–1

FS–

1 FS

–1

–10

51

–Y

––

––

6–

412

BGA

217,

15

× 15

, 0.8

mm

pitc

h,

BGA

247,

10

× 10

, 0.5

mm

pitc

h

ATSA

M9N

12AR

M92

6EJ-

S40

01.

0V32

2 ×

161/

11

1/1/

-24

247

62

1–

1 FS

–1

FS–

1–

105

1–

Y–

––

–6

–4

12BG

A 21

7, 1

5 ×

15, 0

.8 m

m p

itch,

BG

A 24

7, 1

0 ×

10, 0

.5 m

m p

itch

ATSA

M9G

20AR

M92

6EJ-

S40

01.

0V32

2 ×

32–/

11

–1

–7

61

1–

1 FS

–2

FS1

1–

96–

––

–Y

––

6–

–4

BGA

217,

15

× 15

, 0.8

mm

pitc

h

ATSA

M9G

10AR

M92

6EJ-

S26

61.

2V16

2 ×

16–/

11

–1

–4

51

3–

1 FS

–2

FS–

1–

961

––

––

––

3–

––

BGA

217,

15

× 15

, 0.8

mm

pitc

h

ATSA

M92

63AR

M92

6EJ-

S24

01.

3V96

2 ×

16–/

12

–1

–4

51

21

1 FS

–2

FS1

2–

160

1–

––

Y–

–3

–4

–BG

A 32

4, 1

5 ×

15, 0

.8m

m p

itch

ATSA

M92

61AR

M92

6EJ-

S19

01.

2V16

02

× 16

–/1

1–

1–

45

13

–1

FS–

2 FS

–1

–96

1–

––

––

–3

––

–BG

A 21

7, 1

5 ×

15, 0

.8 m

m p

itch

ATSA

M92

60AR

M92

6EJ-

S19

01.

2V8

2 ×

8–/

11

–1

–7

61

1–

1 FS

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FS1

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96–

––

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––

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–4

BGA

217,

15

× 15

, 0.8

mm

pitc

h,

QFP

208

, 28

× 28

, 0.

5 m

m p

itch

SAM

9X60

ARM

926E

J-S

600

1.2V

642

× 32

1/1

11/

1/-

2424

136

132

2–

1 HS

2 HS

22

–1

YY

–1

Adv.

Y–

64

–BG

A 22

8, 1

1 ×

11, 0

.65

mm

pitc

h

SAM

9X60

D6K

ARM

926E

J-S

600

1.2V

642

× 32

1/1

11/

1/-

2424

136

132

2–

1 HS

2 HS

22

–1

YY

–1

Adv.

Y–

64

–BG

A 19

6, 1

1 ×

11, 0

.65

mm

pitc

h

SAM

9X60

D5M

ARM

926E

J-S

600

1.2V

642

× 32

1/1

11/

1/-

2424

136

132

2–

1 HS

2 HS

22

–1

YY

–1

Adv.

Y–

64

–BG

A 23

3, 1

4 ×

14, 0

.8 m

m p

itch

SAM

9X60

D1G

ARM

926E

J-S

600

1.2V

642

× 32

1/1

11/

1/-

2424

136

132

2–

1 HS

2 HS

22

–1

YY

–1

Adv.

Y–

64

–BG

A 23

3, 1

4 ×

14, 0

.8 m

m p

itch

* Clo

ck s

peed

: Max

. clo

ck s

peed

@ +

85°C

. Not

es: 1

. Tem

pera

ture

Ran

ge: −

40°C

to +

85°C

(am

bien

t) 2.

UAR

T: S

uppo

rt fo

r RS4

85, I

SO78

16, I

rDA,

LIN

, mod

em c

ontro

l line

s an

d SP

I on

selec

ted

UART

s. 3

. TW

I: Tw

o-W

ire In

terfa

ce; i

nter

conn

ects

com

pone

nts

on a

two-

wire

bus

. 4.

SSC

: Ser

ial S

ynch

rono

us C

ontro

ller,

supp

orts

man

y se

rial s

ynch

rono

us c

omm

unica

tions

pro

toco

ls us

ed in

aud

io a

nd te

lecom

app

licat

ions

suc

h as

I2 S, s

hort

or lo

ng fr

ame

sync

. 5. 1

6-bi

t and

32-

bit T

imer

s: C

aptu

re/c

ompa

re, w

avef

orm

gen

erat

ion

and

PWM

mod

es. 6

. ECC

: Er

ror C

orre

ctio

n Co

de c

ontro

ller.

7. S

ecur

ity le

vel:

Adv.

= ha

rdw

are

encr

yptio

n en

gine

+ o

n th

e fly

DDR

enc

rypt

ion/

decr

yptio

n +

secu

re s

tora

ge +

tam

per p

ins;

Med

. = h

ardw

are

encr

yptio

n en

gine

onl

y. 8.

Y =

Yes

9. C

amer

a In

terfa

ce: F

or C

MO

S-ty

pe im

age

sens

or, I

TU-R

BT,

60

1/65

6 ex

tern

al in

terfa

ce, p

rogr

amm

able

fram

e ca

ptur

e ra

te, u

p to

12-

bit d

ata

inte

rface

, SAV

and

EAV

syn

chro

niza

tion,

pre

view

pat

h w

ith s

calin

g, o

utpu

t is

in Y

CbCr

form

at; R

aw B

ayer

is s

uppo

rted

on th

e AT

SAM

A5D2

ser

ies. 1

0. G

raph

ics L

CD: 2

4-bi

t par

allel

inte

rface

; sup

-po

rts S

TN a

nd T

FT d

isplay

s, u

p to

16-

bits

per

pixe

l in S

TN c

olor

mod

e, u

p to

16M

col

ors

in T

FT m

ode.

11.

Vid

eo D

ecod

er: H

ardw

are

video

dec

odin

g an

d im

age

post

pro

cess

ing:

H.2

64, M

PEG

4, H

.263

, MPE

G2,

JPE

G, V

P8. 1

2. e

MM

C™: V

4.3

– M

LC N

AND

Flas

h su

ppor

ted

thro

ugh

eMM

C in

terfa

ce; V

4.5

supp

ort f

or th

e AT

SAM

A5D2

ser

ies. 1

3. U

SB: H

igh

spee

d (H

S), F

ull S

peed

(FS)

, Hig

h Sp

eed

Inte

r-Chi

p (H

SIC)

14.

Per

iphe

ral im

plem

enta

tion

varie

s am

ong

prod

ucts

. Con

sult

indi

vidua

l pro

duct

dat

ashe

ets

for a

det

ailed

des

crip

tion.

Focus Product Selector Guide 17

Ther

mal

Man

agem

ent:

Tem

pera

ture

Sen

sors

Prod

uct

Des

crip

tion

# Te

mps

. M

onito

red

Typi

cal/M

ax

Accu

racy

(°C

)Te

mp.

Ran

ge

(°C)

Vcc

Ran

ge (V

)Ty

pica

l Sup

ply

Cur

rent

(µA)

Aler

tsR

esis

tanc

e Er

ror

Cor

rect

ion

Beta

C

ompe

nsat

ion

Pack

ages

MC

P950

1/2/

3/4

Tem

pera

ture

Sw

itch

Repl

acin

g M

AX65

01/2

/3/4

11.

0/3.

0−4

0 to

+12

5+2

.7 to

+5.

525

––

–5-

pin

SOT-

23

MC

P950

9/10

Resis

tor-P

rogr

amm

able

Tem

pera

ture

Sw

itch

10.

5/3.

5−4

0 to

+12

5+2

.7 to

+5.

530

––

–5-

pin

SOT-

23

MC

P980

0/1/

2/3

SMBu

s/I² C

Tem

pera

ture

Sen

sor

10.

5/1.

0−5

5 to

+12

5+2

.7 to

+5.

520

01

––

5-pi

n SO

T-23

MC

P980

4SM

Bus/

I² C T

empe

ratu

re S

enso

r1

0.25

/1.0

−40

to +

125

+2.7

to +

5.5

200

1–

–8-

pin

DFN,

8-p

in M

SOP

MC

P980

8SM

Bus/

I² C T

empe

ratu

re S

enso

r1

0.25

/0.5

−40

to +

125

+2.7

to +

5.5

200

1–

–8-

pin

DFN,

8-p

in M

SOP

MC

P982

44SM

Bus/

I² C T

empe

ratu

re S

enso

r with

EEP

ROM

1

0.5/

3.0

−40

to +

125

+2.2

to +

3.6

100

1–

–8-

pin

TDFN

MC

P990

2/3/

4Lo

wer

Tem

pera

ture

Mul

ti-Te

mpe

ratu

re S

enso

rs2/

3/4

0.25

/1.0

−40

to +

125

+3.0

to +

3.6

200

1ü

Auto

mat

ic8-

pin

WDF

N, 1

0-pi

n VD

FN

TCN

75A

SMBu

s/I² C

Tem

pera

ture

Sen

sor

10.

5/3.

0−4

0 to

+12

5+2

.7 to

+5.

520

01

––

8-pi

n M

SOP,

8-p

in S

OIC

AT30

TS74

SMBu

s/I² C

Tem

pera

ture

Sen

sor

11.

0/2.

0−5

5 to

+12

5+1

.7 to

+5.

516

0–

––

4/5

ball W

LCSP

AT30

TS75

0ASM

Bus/

I² C T

empe

ratu

re S

enso

r with

NVM

10.

5/1.

0−5

5 to

+12

5+1

.7 to

+5.

515

0–

––

8-pi

n SO

IC, 8

-pin

MSO

P, 8

-pin

UDF

N

AT30

TS75

2A/4

A/8A

SMBu

s/I² C

Tem

pera

ture

Sen

sor w

ith N

VM,

2/4/

8 KB

Ser

ial E

EPRO

M1

0.5/

1.0

−55

to +

125

+1.7

to +

5.5

150

––

–8-

pin

SOIC

, 8-p

in M

SOP,

8-p

in U

DFN

MC

P970

0/01

Line

ar A

ctive

The

rmist

or IC

11.

0/4.

0−4

0 to

+15

0+2

.3 to

+5.

56

––

–3-

pin

SOT-

23, 3

-pin

TO

-92,

5-p

in S

C-70

MC

P970

0/01

ALi

near

Act

ive T

herm

istor

IC1

1.0/

2.0

−40

to +

150

+2.3

to +

5.5

6–

––

3-pi

n SO

T-23

, 3-p

in T

O-9

2, 5

-pin

SC-

70

EMC

1033

SMBu

s/I² C

Mul

ti-Te

mpe

ratu

re S

enso

r3

1.0/

3.0

−40

to +

125

+3.0

to +

3.6

502

ü–

8-pi

n M

SOP

EMC

1043

SMBu

s/I² C

Mul

ti-Te

mpe

ratu

re S

enso

r3

0.5/

1.0

−40

to +

125

+3.0

to +

3.6

105

–ü

Confi

gura

ble

8-pi

n M

SOP

EMC

1046

/7SM

Bus/

I² C M

ulti-T

empe

ratu

re S

enso

r with

Hot

test

of Z

ones

6/7

0.25

/1.0

−40

to +

125

+3.0

to +

3.6

395

–ü

Auto

mat

ic10

-pin

MSO

P

EMC

1412

/3/4

SMBu

s/I² C

Mul

ti-Te

mpe

ratu

re S

enso

r2/

3/4

0.25

/1.0

−40

to +

125

+3.0

to +

3.6

430

2ü

Auto

mat

ic8-

pin

TDFN

, 8-p

in M

SOP,

10-

pin

DFN,

10

-pin

MSO

P

EMC

1422

/3/4

SMBu

s/I² C

Mul

ti-Te

mpe

ratu

re S

enso

r with

Shu

tdow

n2/

3/4

0.25

/1.0

−40

to +

125

+3.0

to +

3.6

430

1ü

Auto

mat

ic8-

pin

MSO

P, 1

0-pi

n M

SOP

EMC

1438

SMBu

s/I² C

Mult

i-Tem

pera

ture

Sen

sor w

ith H

otte

st of

Zon

es8

0.25

/1.0

−40

to +

125

+3.0

to +

3.6

450

1ü

Auto

mat

ic16

-pin

QFN

Ther

mal

Man

agem

ent:

Sens

or C

ondi

tioni

ng IC

s

Prod

uct

Des

crip

tion

Typi

cal T

c Ac

cura

cy (°

C)

Typi

cal T

h Ac

cura

cy (°

C)

Tem

pera

ture

Ran

ge (°

C)

Vcc

Rang

e (V

)M

ax S

uppl

y C

urre

nt (μ

A)Pa

ckag

es

MC

P960

0Fu

lly In

tegr

ated

ther

moc

oupl

e EM

F to

tem

pera

ture

con

verte

r. Su

ppor

ts th

erm

ocou

ple

type

s K,

J, T

, N, S

, E, B

and

R.

11

-40

to +

125

2.7

to 5

.550

05

x 5

MQ

FN

MC

P96L

00Fu

lly In

tegr

ated

ther

moc

oupl

e EM

F to

tem

pera

ture

con

verte

r. Su

ppor

ts th

erm

ocou

ple

type

s K,

J, T

, N, S

, E, B

and

R.

14

-40

to +

125

2.7

to 5

.550

05

x 5

MQ

FN

MC

P96R

L00

Fully

Inte

grat

ed th

erm

ocou

ple

EMF

to te

mpe

ratu

re c

onve

rter.

Supp

orts

ther

moc

oupl

e ty

pes

K, J

, T, N

, S, E

, B a

nd R

.1

6-4

0 to

+12

52.

7 to

5.5

500

5 x

5 M

QFN

Ther

mal

Man

agem

ent:

Fan

Con

trol

lers

Prod

uct

Des

crip

tion

# Fa

n D

river

sPW

M/L

inea

r C

ontr

ol#

Exte

rnal

Te

mp.

Inpu

tsTy

pica

l Ac

cura

cy (º

)M

ax.

Accu

racy

(º)

Vcc

Ran

ge

(V)

Inte

rfac

eAl

erts

Fan

Spee

d Lo

okup

Tab

lePa

ckag

es

EMC

2101

Prog

ram

mab

le Fa

n Co

ntro

ller w

ith T

herm

al M

anag

emen

t1

PWM

20.

51.

0+3

.0 to

+3.

6SM

Bus/

I² Cü

ü8-

pin

MSO

P, 8

-pin

SO

IC

EMC

2103

-1Pr

ogra

mm

able

Fan

Cont

rolle

r with

The

rmal

Man

agem

ent

1PW

M1

0.5

1.0

+3.0

to +

3.6

SMBu

s/I² C

üü

12-p

in Q

FN

EMC

2104

Prog

ram

mab

le M

ulti-F

an C

ontro

ller w

ith T

herm

al M

anag

emen

t2

PWM

40.

251.

0+3

.0 to

+3.

6SM

Bus/

I² Cü

ü20

-pin

QFN

EMC

2301

/2/3

/5Pr

ogra

mm

able

Fan

Cont

rolle

r1/

2/3/

5PW

M–

––

+3.0

to +

3.6

SMBu

s/I² C

ü–

8-pi

n M

SOP,

10-

pin

MSO

P, 1

2-pi

n Q

FN, 1

6-pi

n Q

FN

Pow

er M

anag

emen

t: Sw

itchi

ng R

egul

ator

s

Prod

uct

Inpu

t Vol

tage

R

ange

(V)

Out

put V

olta

ge (V

) O

pera

ting

Tem

p.

Ran

ge (°

C)

Switc

hing

Fr

eque

ncy

(kH

z)

Out

put C

urre

nt (m

A)

Feat

ures

Pa

ckag

es

Sing

le O

utpu

t Sw

itchi

ng R

egul

ator

- St

ep D

own

Reg

ulat

or

MC

P160

1/3

2.7

to 5

.50.

9V to

Vin

−40

to +

8575

050

0UV

LO, A

uto-

Switc

hing

, LDO

/Ove

rtem

pera

ture

and

Ove

rcur

rent

Pro

tect

ion

8-pi

n M

SOP

www.microchip.com18

Pow

er M

anag

emen

t: Sw

itchi

ng R

egul

ator

s

Prod

uct

Inpu

t Vol

tage

R

ange

(V)

Out

put V

olta

ge (V

) O

pera

ting

Tem

p.

Ran

ge (°

C)

Switc

hing

Fr

eque

ncy

(kH

z)

Out

put C

urre

nt (m

A)

Feat

ures

Pa

ckag

es

Sing

le O

utpu

t Sw

itchi

ng R

egul

ator

- St

ep D

own

Reg

ulat

or

MC

P161

22.

7 to

5.5

0.8

to 5

.5−4

0 to

+85

1400

1000

Ove

rall E

fficien

cy >

94%

, Sof

t Sta

rt, O

verte

mpe

ratu

re a

nd O

verc

urre

nt P

rote

ctio

n8-

pin

MSO

P, 8

-pin

(3 ×

3)

DFN

MIC

2303

0/1

2.7

to 5

.51.

0, 1

.2, 1

.5, 1

.8, A

dj−4

0 to

+12

580

00/4

000

400

Hype

rLig

ht L

oad®

Mod

e6-

pin

1.6

x 1.

6 M

LF

MIC

2305

0/1

2.7

to 5

.51.

0, 1

.2, 1

.8, 3

.3/1

-1.2

, 1-1

.8,

1.15

-1.4

, 0.9

5-1.

25

−40

to +

125

4000

600

Hype

rLig

ht L

oad

Mod

e8-

pin

2 x

2 M

LF

MIC

2315

0/3

2.7

to 5

.51.

0, 1

.2, 1

.35,

1.8

, 3.3

/1.8

, Adj

−40

to +

125

4000

2000

Hype

rLig

ht L

oad

Mod

e8-

pin

2 x

2 M

LF

MIC

2315

52.

7 to

5.5

1.8,

Adj

−40

to +

125

3000

2000

Pow

er G

ood,

Hyp

erLi

ght L

oad

Mod

e10

-pin

2.5

x 2

.5 M

FL

MIC

2330

32.

7 to

5.5

Adj

−40

to +

125

4000

3000

Pow

er G

ood,

Hyp

erLi

ght L

oad

Mod

e12

-pin

3 x

3 M

LF

MC

P163

11/1

24.

4 to

30.

02.

0 to

24.

0−4

0 to

+12

550

010

00PF

M/P

WM

Ope

ratio

n, E

nabl

e Fu

nctio

n8-

pin

MSO

P,

8-pi

n (2

× 3

) TDF

N

MC

P163

014.

0 to

30

2.0

to 1

5−4

0 to

+85

500

600

Inte

grat

ed N

-cha

nnel,

UVL

O, S

oft S

tart,

Ove

rtem

pera

ture

Pro

tect

ion

6-pi

n SO

T-23

MIC

2404

54.

5 to

19

0.7

to 3

.3−4

0 to

+12

540

0–79

060

00I² C

Pro

gram

mab

le, 4

.5V-

19V

Inpu

t20

-pin

(3 ×

3) Q

FN

MIC

2404

64.

5 to

19

0.7

to 3

.3−4

0 to

+12

540

0–79

060

00Pi

n Se

lecta

ble,

4.5

V-19

V In

put

20-p

in (3

× 3

) QFN

MIC

2405

1/53

/55

4.5

to 1

9Ad

j.−4

0 to

+12

560

060

0/90

00/1

200

Pow

er G

ood,

Sof

t Sta

rt, C

OT

Regu

latio

n Sc

hem

e28

-pin

(5 ×

6) Q

FN

MIC

2405

2/54

/56

4.5

to 1

9Ad

j.−4

0 to

+12

560

060

0/90

00/1

200

Pow

er G

ood,

Sof

t Sta

rt, H

yper

Ligh

t Loa

d M

ode

28-p

in (5

× 6

) QFN

MIC

2660

1/M

IC26

901/

MIC

2695

04.

5 to

28

Adj.

−40

to +

125

600

6000

/900

0/12

000

Pow

er G

ood,

Sof

t Sta

rt, H

yper

Spe

ed C

ontro

l® A

rchi

tect

ure

28-p

in (5

× 6

) QFN

MIC

2660

3/M

IC26

903

4.5

to 2

8Ad

j.−4

0 to

+12

560

060

00Po

wer

Goo

d, S

oft S

tart,

Hyp

erLi

ght L

oad

Mod

e28

-pin

(5 ×

6) Q

FN

MIC

2760

04.

5 to

36

Adj.

−40

to +

125

300

7000

Soft

Star

t, CO

T Re

gulat

ion

sche

me

- Hyp

er S

peed

Con

trol A

rchit

ectu

re, T

herm

al Sh

utdo

wn

28-p

in (5

× 6

) QFN

MIC

2851

04.

5 to

75

Adj.

−40

to +

125

100–

500

4000

Soft

Star

t, CO

T Re

gulat

ion

sche

me

- Hyp

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peed

Con

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rchit

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re, T

herm

al Sh

utdo

wn

28-p

in (5

× 6

) QFN

MIC

2851

1/12

/13

(-1/2

)4.

6 to

60/

70/4

5Ad

j.−4

0 to

+12

520

0–68

030

00/2

000/

4000

Pow

er G

ood,

Sof

t Sta

rt, H

yper

Ligh

t Loa

d M

ode,

Hyp

er S

peed

Con

trol

24-p

in (3

× 4

) FCQ

FN

MIC

2851

4/15

4.5

to 7

5Ad

j.−4

0 to

+12

527

0–80

050

00Po

wer

Goo

d, A

djus

tabl

e So

ft St

art (

MIC

2851

4), H

yper

Spe

ed C

ontro

l Arc

hite

ctur

e, S

elect

able

Hype

rLig

ht L

oad/

CCM

mod

e (M

IC28

515)

6 ×

6 m

m P

QFN

MC

P162

3/4

0.65

to 5

.52.

0 to

5.5

−40

to +

8550

042

5In

tegr

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syn

chro

nous

boo

st re

gulat

or, 0

.65V

sta

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vol

tage

, so

ft st

art,

true

load

disc

onne

ct6-

pin

SOT-

23,

8-pi

n (2

× 3

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MC

P162

51/2

0.82

to 5

.51.

8 to

5.5

−40

to +

8550

065

0Tr

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ad d

iscon

nect

shu

tdow

n (M

CP16

251)

/ In

put t

o ou

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byp

ass

shut

dow

n (M

CP16

252)

6-pi

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T-23

, 8-

pin

(2 ×

3) D

FN

MC

P164

0/B/

C/D

0.65

to 5

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0 to

5.5

−40

to +

8550

080

0In

tegr

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syn

chro

nous

boo

st re

gulat

or, 0

.65V

sta

rt-up

vol

tage

, sof

t sta

rt,

true

load

disc

onne

ct o

r inp

ut-to

-out

put b

ypas

s op

tion

6-pi

n SO

T-23

, 8-

pin

(2 ×

3) D

FN

MC

P164

2B/D

0.65

to 5

.51.

8 to

5.5

−40

to +

8510

0018

00In

tegr

ated

syn

chro

nous

boo

st re

gulat

or, 0

.65V

sta

rt-up

vol

tage

, sof

t sta

rt, e

nabl

e, p

ower

goo

d ou

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, tru

e lo

ad d

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or i

nput

-to-o

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t byp

ass

optio

n8-

pin

MSO

P,

8-pi

n (2

× 3

) DFN

MIC

2877

2.5

to 5

.5Up

to V

in−4

0 to

+12

565

0048

006.

5A IS

W, S

ynch

rono

us B

oost

Reg

ulat

or w

ith B

idire

ctio

nal L

oad

Disc

onne

ct a

nd B

ypas

s M

ode

8-pi

n 2

× 2

mm

FTQ

FN

MIC

2145

2.4

to 1

6Up

to 1

6−4

0 to

+85

450

900

High

-Effic

iency

2.5

W B

oost

Con

verte

r8-

pin

MSO

P, 3

× 3

MLF

MIC

2253

2.5

to 1

0Up

to 3

0−4

0 to

+12

510

0035

003.

5A, 1

MHz

Hig

h-Effi

cienc

y Bo

ost R

egul

ator

with

OVP

and

Sof

t Sta

rt12

-pin

3 ×

3 M

LF

MIC

2290

2.5

to 1

0Up

to 3

4−4

0 to

+12

512

0075

0PW

M B

oost

Reg

ulat

or w

ith In

tern

al Sc

hottk

y Di

ode

8-pi

n 2

× 2

MLF

MIC

2295

/96

2.5

to 1

0Up

to 3

4−4

0 to

+12

512

00/6

0017

00Hi

gh P

ower

Den

sity

1.2A

Boo

st R

egul

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5-pi

n SO

T23,

2 ×

2 M

LF

MC

P166

3/4

2.4

to 5

.5Up

to 3

2−4

0 to

+85

500

1800

High

-effic

iency

(up

to 9

2%),

fi×ed

-freq

uenc

y, no

n-sy

nchr

onou

s,

300

mV

feed

back

for L

ED d

rivin

g (M

CP16

64)

5-pi

n SO

T-23

, 8-

pin

(2 ×

3) T

DFN

MC

P166

52.

7 to

5Up

to 3

2−4

0 to

+85

500

3600

3.6A

Inte

grat

ed S

witc

h PF

M/P

WM

Boo

st R

egul

ator

10-p

in 2

x 2

VQ

FN

MIC

2601

/02

4.5

to 2

0Up

to 4

0−4

0 to

+12

512

00/2

000

1700

1.2A

, 1.2

MHz

/2 M

Hz W

ide

Inpu

t Ran

ge In

tegr

ated

Sw

itch

Boos

t Reg

ulat

or8-

pin

2 ×

2 M

LF

Focus Product Selector Guide 19

Pow

er M

anag

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t: Sw

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ng R

egul

ator

s

Prod

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Inpu

t Vol

tage

R

ange

(V)

Out

put V

olta

ge (V

) O

pera

ting

Tem

p.

Ran

ge (°

C)

Switc

hing

Fr

eque

ncy

(kH

z)

Out

put C

urre

nt (m

A)

Feat

ures

Pa

ckag

es

Sing

le O

utpu

t Sw

itchi

ng R

egul

ator

- St

ep D

own

Reg

ulat

or

MIC

2171

/72

3 to

40

Up to

65

−40

to +

8510

025

00/1

250

100

kHz

2.5A

/1.2

5A S

witc

hing

Reg

ulat

or5-

pin

TO22

0, T

O26

3/

8-pi

n SO

IC, 8

-pin

DIP

Mul

tiple

Out

put S

witc

hing

Reg

ulat

ors

MIC

2800

/10

2.9

to 5

.5Ad

j./Ad

j.−4

0 to

+12

52.

0 M

Hz60

0/30

0/30

060

0 m

A Bu

ck R

egul

ator

, 2 ×

300

mA

LDO

, Low

Q M

ode

(MIC

2810

)16

-pin

(3 ×

3) M

LF

MIC

2238

/30

2.5

to 5

.51.

28/1

.65,

1.8

/1.2

, 1.8

/1.5

45,

1.8/

1.57

5, 1

.8/3

.3, 1

.8/1

.6, 2

.5/1

.2,

3.3/

1.2,

3.3

/3.3

, Adj

./Adj

.−4

0 to

+12

52.

5 M

Hz80

0/80

0Po

wer

Goo

d, S

oft S

tart,

Cur

rent

Lim

it Pr

otec

tion,

Dua

l Out

put V

olta

ges

12-p

in (3

× 3

) MLF

MIC

2325

02.

7 to

5.5

0.9/

1.1,

1.2

/1.0

, 1.2

/1.6

, 1.2

/1.8

, 1.

2/2.

8, 1

.2/3

.3, 1

.575

/1.8

, 2.6

/3.3

, Ad

j./Ad

j.−4

0 to

+12

54.

0 M

Hz40

0/40

020

mVp

p in

Hyp

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ght L

oad®

Mod

e, S

oft S

tart,

Ultr

a-Fa

st T

rans

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espo

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10-p

in (2

× 2

) MLF

, 12-

pin

(2.5

× 2

.5) M

LF

MIC

2325

42.

5 to

5.5

1.0/

1.8

−40

to +

125

4.0

MHz

400/

400

20 m

Vpp

in H

yper

Ligh

t Loa

d M

ode,

Sof

t Sta

rt, U

ltra-

Fast

Tra

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t Res

pons

e10

-pin

(2 ×

2) T

hin

MLF

MIC

2345

02.

7 to

5.5

Adj./

Adj./

Adj.

−40

to +

125

3.0

MHz

2000

/200

0/20

00Po

wer

Goo

d, S

oft S

tart,

Hyp

erLi

ght L

oad

Mod

e32

-pin

(5 ×

5) Q

FN

MIC

2442

04.

5 to

15

Adj./

Adj.

−40

to +

125

1 M

Hz25

00/2

500

Pow

er G

ood,

Sof

t Sta

rt24

-pin

(4 ×

4) M

LF

MIC

2442

14.

5 to

15

Adj./

Adj.

−40

to +

125

500

kHz

2500

/250

0Po

wer

Goo

d, S

oft S

tart

24-p

in (4

× 4

) MLF

MIC

2315

82.

7 to

5.5

Adj./

Adj.

−40

to +

125

3.0

MHz

2000

/200

0Po

wer

Goo

d, S

oft S

tart,

Hyp

erLi

ght L

oad

Mod

e20

-pin

(3 ×

4) M

LF

MIC

2315

92.

7 to

5.5

Adj./

Adj.

−40

to +

125

3.0

MHz

2000

/200

0Po

wer

Goo

d, S

oft S

tart,

Hyp

erLi

ght L

oad

Mod

e20

-pin

(3 ×

4) M

LF

MIC

2345

12.

7 to

5.5

Adj./

Adj./

Adj.

−40

to +

125

3.0

MHz

2000

/200

0/20

00Po

wer

Goo

d, S

oft S

tart,

Hyp

erLi

ght L

oad

Mod

e26

-pin

(4 ×

4) Q

FN

MIC

7400

/12.

4 to

5.5

1.1,

1.8

, 1.0

5, 1

.25,

12

or

Confi

gura

ble

−40

to +

125

2 M

Hz B

oost

, 1.

3 M

Hz B

ucks

DC to

DC

Buck

s: 3

,000

, DC

/DC

Boos

t 200

High

ly in

tegr

ated

-con

figur

able,

feat

urin

g fiv

e bu

ck re

gulat

ors,

one

boo

st re

gulat

or

and

glob

al Po

wer

Goo

d in

dica

tor/e

nabl

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n 36

-pin

4.5

× 4

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FN

Pow

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anag

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duct

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ou

t (V)

Fixe

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V)Io

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ax. (

mA)

Load

Reg

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(%/m

A)Pa

ckag

es

SR08

680

–285

9.0–

503.

310

00.

025

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1080

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Pow

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Aux

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ontr

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in

(kH

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requ

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Max

(k

Hz)

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TR

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ax,

25C

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verc

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Pro

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Pack

age

MC

P101

216

V (Ty

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/700

V Tr

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63FA

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NANA

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Pow

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put V

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Ope

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mpe

ratu

re

Ran

ge (°

C)

Feat

ures

Pack

ages

MIC

2103

/4Sy

nc. B

uck

14.

5–75

0.8–

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0–60

0 kH

z−4

0 to

+12

5Hy

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d® M

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Ext

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Pow

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Com

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16-p

in 3

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MIC

2124

Sync

. Buc

k1

3.0–

180.

8–12

300

kHz

−40

to +

125

Soft

Star

t, In

tern

al Vo

ltage

Bias

10-p

in M

SOP

MIC

2130

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nc. B

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18.

0–40

0.7–

2415

0/40

0 kH

z−4

0 to

+12

5Po

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Goo

d, S

oft S

tart,

Inte

rnal

Volta

ge B

ias16

-pin

e-T

SSO

P,

16-p

in 4

× 4

MLF

MIC

2150

/1Sy

nc. B

uck

24.

5–14

.50.

7–5.

550

0 kH

z−4

0 to

+12

5Po

wer

Goo

d, S

oft S

tart,

Inte

rnal

Volta

ge B

ias24

-pin

4 ×

4 M

LF

MIC

2183

Sync

. Buc

k1

2.9–

141.

3–12

200/

400

kHz

−40

to +

125

Exte

rnal

Cloc

k Sy

nc, S

oft S

tart,

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Volta

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ias16

-pin

SO

P, 1

6-pi

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SOP

MIC

2184

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c. B

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12.

9–14

1.3–

1220

0/40

0 kH

z−4

0 to

+12

5Ex

tern

al Cl

ock

Sync

, Sof

t Sta

rt, In

tern

al Vo

ltage

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16-p

in S

OP,

16-

pin

QSO

P

MIC

2185

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Boos

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PIC,

Ćuk

12.

9–14

3.3–

1410

0/20

0/40

0 kH

z−4

0 to

+12

5Sk

ip M

ode,

Ext

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l Clo

ck S

ync,

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t Sta

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tern

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OIC

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P

www.microchip.com20

Pow

er M

anag

emen

t: PW

M C

ontr

olle

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Prod

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polo

gies

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put V

olta

ge

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ge (V

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utpu

t Vo

ltage

(V)

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g Fr

eque

ncy

(Hz)

Ope

ratin

g Te

mpe

ratu

re

Ran

ge (°

C)

Feat

ures

Pack

ages

MIC

38H

C42

/3/4

/5Fo

rwar

d, F

lybac

k1

9.0

up to

20

–Ad

j. to

500

kHz

−40

to +

85Fo

rwar

d, F

lybac

k Su

ppor

ted

Topo

logi

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pin

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14-

pin

PDIP,

8-

pin

SOIC

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pin

SOIC

MIC

9130

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180

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to 1

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Hz−4

0 to

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nal C

lock

Syn

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-pin

SO

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6-pi

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SOP

MC

P163

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2Fl

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k, B

oost

, SEP

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3.0–

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nc. u

p to

2 M

Hz−4

0 to

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tern

al Cl

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Sync

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rent

Lim

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ircui

t Pro

tect

ion,

Sof

t Sta

rt,

Inte

rnal

Volta

ge B

ias, U

VLO

, Pea

k Cu

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Con

trol M

ode

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in TS

SOP,

20-p

in SS

OP,

20 p

in 4

× 4

QFN

MC

P163

1HV

Flyb

ack,

Boo

st, S

EPIC

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13.

5–16

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nc. t

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MHz

−40

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125

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nc, C

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rote

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-pin

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z−4

0 to

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tern

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hort

Circ

uit P

rote

ction

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in 3

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DFN

MIC

2128

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Sync

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750.

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270–

800k

Hz−4

0 to

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tern

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Pro

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urre

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PW

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put V

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Supp

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river

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P191

114.

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to 9

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425

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154.

5–42

Topo

logy

De

pend

ent

Boos

t, Fl

ybac

k,

SEPI

C, Ć

uk1

ü4

256

8 12Ex

celle

nt re

gulat

ion

for c

onst

ant c

urre

nt a

pplic

atio

ns24

-pin

4×4

QFN

28

-pin

5×5

QFN

MC

P191

16

MC

P191

174.

5–42

Topo

logy

De

pend

ent

Boos

t, Fl

ybac

k,

SEPI

C, Ć

uk1

ü8

336

8 12Im

prov

ed c

urre

nt re

gulat

ion

accu

racy

, add

itiona

l cod

e sp

ace

(com

pare

d to

MCP

1911

4 or

MCP

1911

5)24

-pin

4×4

QFN

28

-pin

5×5

QFN

MC

P191

18

MC

P191

194.

5–40

0.5

to 9

0%

of V

inSy

nc. B

uck

1ü

425

611

14

Confi

gura

ble

and

dyna

mica

lly c

hang

eabl

e in

tern

al an

alog

com

pens

atio

n ne

twor

k24

-pin

4×4

QFN

28

-pin

5×5

QFN

MC

P191

22

MC

P191

234.

5–40

0.3–

16Sy

nc. B

uck

1ü

425

612

16

Emul

ated

ave

rage

cur

rent

mod

e co

ntro

l, pr

ogam

mab

le ga

in fe

edba

ck a

mpl

ifier,

mul

tipha

se o

pera

tion,

im

prov

ed re

gulat

ion

accu

racy

and

cur

rent

mea

sure

men

t acc

urac

y (c

ompa

red

to M

CP19

110/

1/8/

9)24

-pin

4×4

QFN

28

-pin

5×5

QFN

MC

P191

24

MC

P191

254.

5–42

Topo

logy

De

pend

ent

Boos

t, Fl

ybac

k,

SEPI

C, Ć

uk1

ü4

256

8 12Du

al in

depe

nden

t vol

tage

and

cur

rent

con

trol lo

ops

allow

sea

mles

s tra

nsitio

ns

from

con

stan

t vol

tage

to c

onst

ant c

urre

nt re

gulat

ion

24-p

in 4

×4 Q

FN

28-p

in 5

×5 Q

FN

MC

P192

14

MC

P192

154.

5–42

Topo

logy

De

pend

ent

Boos

t, Fl

ybac

k,

SEPI

C, Ć

uk2

ü8

336

8 12Du

al ch

anne

ls, w

hich

can

be

confi

gure

d to

con

trol t

wo

outp

uts,

or o

ne b

idire

ctio

nal s

yste

m28

-pin

5×5

QFN

32

-pin

5×5

QFN

Pow

er M

anag

emen

t: Po

wer

Mod

ules

Prod

uct

Inpu

t Vol

tage

R

ange

(V)

Out

put V

olta

ge (V

)O

pera

ting

Tem

p.

Ran

ge (°

C)

Con

trol

Sch

eme

Switc

hing

Fr

eque

ncy

(kH

z)Vo

ut M

a×.

(V)

Out

put

Cur

rent

(A)

Feat

ures

Pack

ages

MIC

2830

4-1/

-24.

5 to

70

Adj.

−40

to +

125

COT

600

243

Hype

rLig

ht L

oad®

Mod

e, H

yper

Spe

ed C

ontro

l® A

rchi

tect

ure,

Pow

er G

ood,

Sof

t Sta

rt64

-pin

(12

× 12

) QFN

MIC

4520

5-1/

-24.

5 to

26

Adj.

−40

to +

125

COT

200–

600

5.5

6Hy

perL

ight

Loa

d M

ode,

Hyp

er S

peed

Con

trol A

rchi

tect

ure,

Pow

er G

ood,

Sof

t Sta

rt52

-pin

(8 ×

8) Q

FN

MIC

4520

8-1/

-24.

5 to

26

Adj.

−40

to +

125

COT

200–

600

5.5

10Hy

perL

ight

Loa

d M

ode,

Hyp

er S

peed

Con

trol A

rchi

tect

ure,

Pow

er G

ood,

Sof

t Sta

rt52

-pin

(10

× 10

) QFN

MIC

4521

2-1/

-24.

5 to

26

Adj.

−40

to +

125

COT

200–

600

5.5

14Hy

perL

ight

Loa

d M

ode,

Hyp

er S

peed

Con

trol A

rchi

tect

ure,

Pow

er G

ood,

Sof

t Sta

rt64

-pin

(12

× 12

) QFN

MIC

3303

02.

7 to

5.5

1.2,

1.8

, Adj

.−4

0 to

+12

5PW

M

8,00

03.

60.

4Hy

perL

ight

Loa

d M

ode

10-p

in (2

.5 ×

2.0

) MLF

®

MIC

3305

02.

7 to

5.5

1.0,

1.2

, 1.8

, 3.3

, Adj

.−4

0 to

+12

5PW

M

4,00

03.

30.

6Hy

perL

ight

Loa

d M

ode

12-p

in (3

× 3

) MLF

MIC

3315

32.

7 to

5.5

1.2,

Adj

.−4

0 to

+12

5PW

M

4,00

03.

61.

2Hy

perL

ight

Loa

d M

ode,

Pow

er G

ood,

Sof

t Sta

rt14

-pin

(3 ×

3.5

) MLF

MIC

3385

2.7

to 5

.51.

5, A

dj.

−40

to +

125

PWM

8,

000

5.5

0.6

Low

Q14

-pin

(3 ×

3.5

) MLF

MIC

2830

3-1/

-24.

5 to

50

Adj.

−40

to +

125

COT

600

243

Hype

rLig

ht L

oad

Mod

e, H

yper

Spe

ed C

ontro

l Arc

hite

ctur

e, P

ower

Goo

d, S

oft S

tart

64-p

in (1

2 ×

12) Q

FN

MIC

4511

6-1/

-24.

5 to

20

Adj.

−40

to +

125

COT

600

176

Hype

rLig

ht L

oad

Mod

e, H

yper

Spe

ed C

ontro

l Arc

hite

ctur

e, P

ower

Goo

d, S

oft S

tart

52-p

in (8

× 8

) QFN

MIC

4540

44.

5 to

19

Selec

tabl

e−4

0 to

+12

5Fi

xed

400–

790

3.3

5Po

wer

Goo

d, S

oft S

tart

64-p

in (6

× 1

0) Q

FN

Focus Product Selector Guide 21

Pow

er M

anag

emen

t: Li

near

Reg

ulat

ors

Part

#±V

in M

in (V

)±V

in M

ax (V

)O

utpu

t Vol

tage

(V)

Max

Out

put C

urre

nt (m

A)Ty

pica

l Lin

e R

egul

atio

n (%

/V)

Typi

cal L

oad

Reg

ulat

ion

(%/m

A)Pa

ckag

es

LR8

1245

01.

2–44

010

0.00

30.

153-

Lead

TO

-252

, 3-L

ead

TO-9

2, 3

-Lea

d SO

T-89

LR12

1210

01.

2–88

500.

003

0.06

3-Le

ad T

O-2

52, 8

-Lea

d SO

IC, 3

-Lea

d TO

-92

Pow

er M

anag

emen

t: D

DR

Ter

min

atio

n R

egul

ator

s

Prod

uct

Iou

tVi

n M

in. (

V)Vi

n M

ax. (

V)Vo

ut (

V)PW

R G

ood

VTT

Accu

racy

Exte

rnal

Tra

nsis

tor

Sync

Buc

kFr

eque

ncy

Feat

ures

Pack

ages

MIC

5166

±3A

0.9

3.6

1/2

of V

inY

±40

mV

––

–In

tegr

ated

FET

s3

× 3

DFN

MIC

5167

±6A

2.6

5.5

Adj.

dow

n to

0.3

5VY

±12

mV

–Y

1 M

HzIn

tegr

ated

Syn

c-Bu

ck4

× 4

DFN

Pow

er M

anag

emen

t: C

harg

e Pu

mp

DC

-to-

DC

Con

vert

ers

Prod

uct

Con

figur

atio

nIn

put V

olta

ge

Ran

ge (V

)O

utpu

t Vol

tage

(V)

Typi

cal O

utpu

t C

urre

nt (m

A)Sw

itchi

ng F

requ

ency

(k

Hz)

Supp

ly C

urre

nt

(Is, fl

oatin

g ou

tput

, μA

, 25°

C)

Out

put R

esis

tanc

e (Ω

, at t

ypic

al o

utpu

t cu

rren

t, 25

°C)

Pow

er C

onve

rsio

n Effi

cien

cy (%

)Fe

atur

esPa

ckag

es

Inve

rtin

g or

Dou

blin

g C

harg

e Pu

mps

TC76

60S/

HIn

verti

ng o

r dou

blin

g1.

5–12

−Vin

or 2

* Vin

2010

, 45,

or 1

2080

or 4

6055

or 6

098

% a

t 1 m

A,

85%

at 1

0 m

ABo

ost p

in in

crea

ses

switc

hing

freq

uenc

y, hi

gh-v

olta

ge o

scilla

tor

8-pi

n SO

IC a

nd

8-pi

n PD

IP

TC76

62A/

BIn

verti

ng o

r dou

blin

g1.

5–15

−Vin

or 2

* Vin

20 o

r 40

10, 1

2 or

35

80 o

r 190

50 o

r 65

96%

at 1

mA,

97

% a

t 7.5

mA

Boos

t pin

incr

ease

s sw

itchi

ng fr

eque

ncy,

no

low

-vol

tage

term

inal

requ

ired

8-pi

n SO

IC a

nd

8-pi

n PD

IP

Reg

ulat

ed C

harg

e Pu

mps

MC

P125

2/3

Regu

lated

2.0–

5.5

3.3,

5.0

, or

Adju

stab

le15

065

0, 1

000

60N/

A81

% a

t 10

mA

Shut

dow

n, p

ower

goo

d, re

gulat

ed o

utpu

t, ad

just

able

vers

ion

8-pi

n M

SOP

www.microchip.com22

Pow

er M

anag

emen

t: Po

wer

MO

SFET

Driv

ers

Prod

uct

Driv

ers

Con

figur

atio

n Pe

ak O

utpu

t C

urre

nt

(sou

rce/

sink

, A)

Max

Sup

ply

Volta

ge (V

)O

utpu

t Res

ista

nce

(sou

rce/

sink

, Ω)

Prop

agat

ion

Del

ay

(Td1/

Td2,

ns)

Ris

e/Fa

ll Ti

me

(Tr,

Tf, n

s)Pa

ckag

es

Low

-Sid

e Po

wer

MO

SFET

Driv

ers

MC

P14A

0051

/2Si

ngle

Inve

rting

/Non

-Inve

rting

0.5/

0.5

186.

5/4.

540

/31

51/3

96-

pin

SOT-

23, 6

-pin

2 x

2 D

FNM

IC44

16/7

Sing

leNo

n-In

verti

ng/In

verti

ng/C

ompl

imen

tary

1.2/

1.2

183.

5/3.

542

/42

3.5/

3.5

SOT-

143

MIC

4467

/8/9

Qua

dIn

verti

ng/N

on-In

verti

ng/C

ompl

imen

tary

1.2/

1.2

185/

535

/55

5/5

16-p

in W

SOIC

, 14-

pin

PDIP

MC

P14A

0151

/2Si

ngle

Inve

rting

/Non

-Inve

rting

1.5/

1.5

1817

/10

41/3

218

.5/1

76-

pin

SOT-

23, 6

-pin

2 x

2 D

FNM

CP1

4A01

53/4

/5Du

alIn

verti

ng/N

on-In

verti

ng/C

ompl

imen

tary

1.5/

1.5

184.

5/3

32/2

411

/10

8-pi

n SO

IC, 8

-pin

MSO

P, 8

-pin

2 x

3 D

FNM

CP1

4E6/

7/8

Dual

Inve

rting

/Non

-Inve

rting

/Com

plim

enta

ry2.

0/2.

018

5/5

45/4

512

/15

8-pi

n SO

IC, 8

-pin

PDI

P, 8

-pin

6 x

5 D

FNM

IC44

78/9

/80

Dual

Non-

Inve

rting

/Inve

rting

/Com

plim

enta

ry2.

5/2.

532

6/3

160/

7012

0/45

8-pi

n SO

IC, 8

-pin

ePA

D SO

ICM

CP1

4E9/

10/1

1Du

alIn

verti

ng/N

on-In

verti

ng/C

ompl

imen

tary

3.0/

3.0

184/

445

/45

14/1

78-

pin

SOIC

, 8-p

in P

DIP,

8-p

in 6

x 5

DFN

MAQ

4123

/4/5

Dual

Inve

rting

/Non

-Inve

rting

/Com

plim

enta

ry3.

0/3.

020

5/5

40/6

011

/11

8-pi

n eP

AD S

OIC

MIC

4123

/4/5

Dual

Inve

rting

/Non

-Inve

rting

/Com

plim

enta

ry3.

0/3.

020

5/5

44/5

911

/11

8-pi

n eP

AD S

OIC

MC

P14E

3/4/

5Du

alIn

verti

ng/N

on-In

verti

ng/C

ompl

imen

tary

4.0/

4.0

182.

5/2.

546

/50

15/1

88-

pin

SOIC

, 8-p

in P

DIP,

8-p

in 6

x 5

DFN

MC

P14A

0451

/2Si

ngle

Non-

Inve

rting

/Inve

rting

4.5/

4.5

181.

6/1.

216

/19.

59/

9.5

8-pi

n M

SOP,

8-p

in S

OIC

8 p

in 2

x 2

WDF

NM

CP1

4A06

01/2

Sing

leNo

n-In

verti

ng/In

verti

ng6.

0/6.

018

1.2/

0.9

22/2

210

/10

8-pi

n M

SOP,

8-p

in S

OIC

8 p

in 2

x 3

WDF

NM

CP1

4A03

1/2

Sing

le No

n-In

verti

ng/In

verti

ng

3.0/

3.0

182.

2/1.

515

/18

18/1

7 8-

pin

MSO

P, 8

-pin

SO

IC, 8

-pin

, 2 x

2 D

FNM

IC41

20/2

9Si

ngle

Non-

Inve

rting

/Inve

rting

6.0/

6.0

205/

545

/50

12/1

38-

pin

ePAD

SO

IC, 8

-pin

3 x

3 M

LFM

IC44

21A/

22A

Sing

leIn

verti

ng/N

on-In

verti

ng9.

0/9.

018

0.8/

0.6

15/3

520

/24

8-pi

n PD

IP, 8

-pin

SO

IC, 5

-pin

TO

-220

MIC

4451

/2Si

ngle

Inve

rting

/Non

-Inve

rting

12.0

/12.

018

0.8/

0.6

25/4

020

/24

8-pi

n SO

IC, 8

-pin

PDI

P, 5

-pin

TO

-220

Hig

h-Si

de P

ower

MO

SFET

Driv

ers

MIC

5011

/13

High

-Sid

e or

Low

-Sid

e Si

ngle

Non-

Inve

rting

950

µA*/2

25 µ

A*32

N/A

N/A

25 µ

s/4

µs8-

pin

SOIC

, 8-p

in P

DIP

MIC

5014

/15

High

-Sid

e or

Low

-Sid

e Si

ngle

Non-

Inve

rting

/Inve

rting

800

µA*

30N/

AN/

A90

µs/

6 µs

8-pi

n SO

IC, 8

-pin

PDI

PM

IC50

18/1

9Hi

gh-S

ide

or L

ow-S

ide

Sing

leNo

n-In

verti

ng10

µA*

9N/

AN/

A75

0 µs

/10

µs4-

pin

SOT-

143

MIC

5021

High

-Sid

e or

Low

-Sid

e Si

ngle

Non-

Inve

rting

5600

µA*

36N/

A50

0/80

040

0 ns

/400

ns

8-pi

n SO

IC, 8

-pin

PDI

PM

IC50

60Hi

gh-S

ide

or L

ow-S

ide

Sing

leNo

n-In

verti

ng80

0 µA

*30

N/A

N/A

90 µ

s/6

µs8-

pin

3 x

3 M

LF

Sync

hron

ous

Driv

ers

MC

P146

28/M

CP1

4700

Half

Brid

ge D

river

Du

al In

puts

2.0/

3.5

5.5

(36V

Boo

t Pin

)1/

1 (0

.5 o

n lo

w s

ide)

15/2

210

/10

8-pi

n SO

IC, 8

-pin

3 ×

3 D

FNM

IC41

00/1

Half

Brid

ge D

river

Du

al In

puts

2.0/

2.0

16 (1

00V

Boot

Pin

)2.

5/2.

027

/27

10/1

08-

pin

SOIC

MIC

4102

Half

Brid

ge D

river

Si

ngle

PWM

3.

0/2.

016

(100

V Bo

ot P

in)

1.5/

2.0

60/7

510

/68-

pin

SOIC

MIC

4103

/4

Half

Brid

ge D

river

Du

al In

puts

3.0/

2.0

16 (1

00V

Boot

Pin

)1.

5/2.

024

/24

10/6

8-pi

n SO

ICM

IC46

00Ha

lf Br

idge

Driv

er

Dual

Inpu

ts, S

ingl

e PW

M1.

0/1.

028

2.0/

1.5

26/5

515

/13.

516

-pin

3 ×

3 Q

FNM

IC46

04

Half

Brid

ge D

river

Du

al In

puts

1.0/

1.0

16 (8

5V B

oot P

in)

4.4/

4.0

33/3

4 20

/20

8-pi

n SO

IC, 1

0-pi

n 2.

5 x

2.5

TDFN

MIC

4605

Half

Brid

ge D

river

Du

al In

puts

, Sin

gle

PWM

1.0/

1.0

16 (8

5V B

oot P

in)

10/6

35/3

520

/20

8-pi

n SO

IC, 1

0-pi

n 2.

5 x

2.5

TDFN

MIC

4606

Full B

ridge

Driv

erDu

al In

puts

, Sin

gle

PWM

1.0/

1.0

16 (8

5V B

oot P

in)

10/6

35/3

520

/20

16-p

in 4

x 4

QFN

MIC

4607

3 Ph

ase

Drive

rDu

al In

puts

, Sin

gle

PWM

1.0/

1.0

16 (8

5V B

oot P

in)

10/6

35/3

520

/20

28-p

in T

SSO

P, 2

8-pi

n 4

x 5

QFN

MIC

4608

Half

Brid

ge D

river

Du

al In

puts

, Sin

gle

PWM

1.0/

1.0

20 (6

00V

Boot

Pin

)8/

9.2

450/

450

31/3

114

-pin

SO

ICM

IC46

093

Phas

e Dr

iver

Dual

Inpu

ts1.

0/1.

020

(600

V Bo

ot P

in)

8/9.

245

0/45

031

/31

28-p

in S

OIC

Pow

er M

anag

emen

t: Po

wer

Sw

itche

s

Part

#D

escr

iptio

nU

SB P

ort P

ower

Sw

itch

(55

mΩ

)H

igh-

Spee

d U

SB

2.0

Switc

hBa

ttery

Cha

rger

Em

ulat

ion

Profi

les

8 R

esis

tor S

et

Cur

rent

Lim

itsC

harg

ing

Indi

cato

r Out

put

Atta

ch D

etec

tion

Out

put

Cur

rent

M

easu

rem

ent

Pow

er

Allo

catio

nIn

terf

ace

Pack

ages

USB

Por

t Pow

er C

ontr

olle

rsU

CS1

001-

3/4

USB

Port

Pow

er C

ontro

ller w

ith C

harg

er E

mul

atio

n1

19

Up to

2.4

A‒3

opt

ion

‒4 o

ptio

n–

–Di

scre

te I/

O20

-pin

4 x

4 Q

FN

UC

S100

2-2

Prog

ram

mab

le US

B Po

rt Po

wer

Con

trolle

r w

ith C

harg

er E

mul

atio

n1

19

+ 1

Prog

ram

mab

leUp

to 2

.4A

Y–

YY

I² C/S

MBu

s20

-pin

4 x

4 Q

FN

UC

S100

3-1

Prog

ram

mab

le US

B Po

rt Po

wer

Con

trolle

r w

ith C

harg

er E

mul

atio

n1

19

+ 1

Prog

ram

mab

leUp

to 3

A–

YY

YI² C

/SM

Bus

20-p

in 4

x 4

QFN

UC

S810

03Pr

ogra

mm

able

USB

Port

Pow

er C

ontro

ller -

Aut

omot

ive1

19

+ 1

Prog

ram

mab

leUp

to 3

A–

YY

YI² C

/SM

Bus

28-p

in 5

x 5

QFN

Focus Product Selector Guide 23

Pow

er M

anag

emen

t: Po

wer

Sw

itche

s

Part

#C

hann

els

Vin R

ange

(V

)Fi

xed

Cur

rent

Lim

it M

in.

Adj.

Cur

rent

Lim

it M

ax.

Rd

s(o

n) (

mΩ

)R

ever

se

Bloc

king

Enab

le L

ogic

UVL

OTh

erm

al

Prot

ectio

nFa

ult

Flag

Cur

rent

M

easu

rem

ent

Pack

ages

Cur

rent

Lim

it U

SB P

rote

ctio

n Sw

itche

s

MIC

200x

/201

xSi

ngle

2.5–

5.5

500

mA,

800

mA,

1.2

AUp

to 2

A70

/100

/170

–Ac

tive

Low,

Act

ive H

igh

YY

–/Y

–5-

pin

SOT2

3, 6

-pin

SO

T23,

2 ×

2M

IC20

25/7

5Si

ngle

2.7–

5.5

500

mA

–90

YAc

tive

Low,

Act

ive H

igh

YY

Y–

8-pi

n SO

IC, 8

-pin

MSO

PM

IC20

33/3

9Si

ngle

2.5–

5.5

475

mA,

517

mA,

760

mA,

950

mA,

1.1

4A2.

5A75

–Ac

tive

Low,

Act

ive H

igh

YY

Y–

6-pi

n SO

T-23

, 2 x

2 T

DFN

MIC

2042

/43

Sing

le0.

8–5.

5–

3.0A

60Y

Activ

e Lo

w, A

ctive

Hig

hY

YY

–8-

pin

SOIC

, 14-

pin

TSSO

PM

IC20

44/4

5Si

ngle

0.8–

5.5

–6.

0A30

YAc

tive

Low,

Act

ive H

igh

YY

Y–

16-p

in T

SSO

PM

IC25

44/4

8Si

ngle

2.7–

5.5

–1.

5A80

YAc

tive

Low,

Act

ive H

igh

–Y

Y–

8-pi

n SO

IC, 8

-pin

MSO

P

MIC

2545

A/49

ASi

ngle

2.7–

5.5

–3.

0A35

YAc

tive

Low,

Act

ive H

igh

–Y

Y–

8-pi

n SO

IC, 8

-pin

PDI

P,

14-p

in T

SSO

PM

IC20

26/7

6Du

al2.

7–5.

550

0 m

A–

90Y

Activ

e Lo

w, A

ctive

Hig

hY

YY

–8-

pin

SOIC

, 8-p

in P

DIP

MIC

2506

Dual

2.7–

7.5

1.0A

–75

YAc

tive

Low,

Act

ive H

igh

–Y

Y–

8-pi

n SO

IC, 8

-pin

PDI

PM

IC25

46/4

7Du

al2.

7–5.

5–

1.5A

80Y

Activ

e Lo

w, A

ctive

Hig

h–

YY

–16

-pin

SO

IC, 1

6-pi

n TS

SOP

UC

S211

3/21

14Du

al2.

9–5.

5–

3.4A

40/1

8Y

Activ

e Lo

w, A

ctive

Hig

hY

YY

Y20

-pin

4 ×

4 Q

FN,

20-p

in 3

x 3

QFN

Pow

er M

anag

emen

t: Po

wer

Sw

itche

s

Part

#C

hann

els

Vin R

ange

(V)

Max

. Sw

itch

Cur

rent

(A)

Rd

s(o

n) (

mΩ

)So

ft St

art (

μs)

Load

Dis

char

ge (Ω

)En

able

Log

icR

ever

se B

lock

ing

Pack

ages

Load

Sw

itche

s

MIC

9404

0/1/

2/3/

4/5

Sing

le1.

7–5.

53.

028

100

(940

42),

900

(940

44/5

)25

0 (9

4041

/3),

200

(940

45)

Activ

e Hi

gh–

1.2

× 1.

2M

IC94

070/

1/2/

3Si

ngle

1.7–

5.5

1.2

120

800

(940

72/3

)20

0 (9

4071

/3)

Activ

e Hi

gh–

6-pi

n SC

70, 1

.2 ×

1.6

*M

IC94

080/

1/2/

3/4/

5Si

ngle

1.7–

5.5

2.0

6780

0 (9

4082

/3),

120

(940

84/5

)25

0 (9

4081

/3/5

)Ac

tive

High

–0.

85 ×

0.8

5M

IC94

161/

2/3/

4/5

Sing

le1.

7–5.

53.

015

.527

00 (9

4161

/4/5

), 60

(941

62/3

)20

0 (9

4162

/4)

Activ

e Hi

ghY

1.5

× 1

WLC

SPM

IC95

410

Sing

le0.

5–5.

57.

06.

611

0023

00Ac

tive

High

–1.

2 ×

2M

IC94

066/

7/8/

9Du

al1.

7–5.

52

8580

0 (9

4068

/9)

200

(940

67/9

)Ac

tive

High

–2

× 2

Pow

er M

anag

emen

t: LD

O S

ingl

e O

utpu

t

Prod

uct

Out

put C

urre

nt

(mA)

Vin M

in.

(V)

Vin M

ax.

(V)

Vou

t (V)

Volta

ge D

rop

Typ.

(mV)

IGN

D T

yp.

(µA)

Out

put

Accu

racy

(%)

PSR

R

1 kH

z (d

B)Fe

atur

es

Pack

ages

MIC

5280

/1/2

/325

/50/

100/

150

4.5

120

3.3,

5.0

, Adj

.11

0031

µA/

6 µA

±2/±

380

/90

High

Inpu

t Vol

tage

, Loa

d Du

mp,

Rev

erse

Bat

tery

Pr

otec

tion

8-pi

n SO

IC

MC

P179

0/1

706

303.

0, 3

.3, 5

.070

070

µA

±0.2

90Hi

gh In

put

3-pin

SOT

-223

, 3-p

in DD

PAK,

5-p

in DD

PAK,

5-p

in SO

T-22

3

MIC

5233

100

2.3

361.

8, 2

.5, 3

.0, 3

.3, 5

.0, A

dj27

018

µA

±150

High

Inpu

t Vol

tage

, Rev

erse

Bat

tery

and

Cur

rent

Pr

otec

tion

3-pi

n SO

T-22

3, 5

-pin

SO

T-23

MC

P181

015

02.

55.

51.

2, 1

.8, 2

.5, 3

.0, 3

.3, 4

.238

00.

02 u

A±1

40Ul

tra L

ow Q

uies

cent

Cur

rent

2x2

DFN

MIC

5365

150

2.5

5.5

1.0,

1.2

, 1.3

, 1.5

, 1.8

, 2.0

, 2.5

, 2.6

, 2.

7, 2

.8, 2

.85,

2.9

, 3.0

, 3.3

155

32 µ

A±2

80Hi

gh P

SRR

5-pi

n SC

70, 5

-pin

TSO

T, 4

-pin

UDF

N

MC

P171

115

01.

46

1.2–

5.0

500

0.6

µA±1

20Ul

tra L

ow Iq

, Cap

less

4-pi

n UQ

FN, 5

-pin

SO

T-23

MC

P170

3A25

02.

716

1.2–

5.5

625

2 µA

±0.4

35Hi

gh In

put,

Low

Iq3-

pin S

OT-8

9, 3

-pin

SOT-

23A,

3-p

in SO

T-22

3, 8

-pin

DFN

MIC

5501

/2/3

/430

02.

55.

51.

2, 1

.8, 2

.8, 3

.0, 3

.316

038

µA

±260

Low

Dro

pout

4-pi

n UD

FN, 5

-pin

SO

T-23

MIC

5239

500

2.3

301.

5, 1

.8, 2

.5, 3

.0, 3

.3, 5

.0, A

dj35

023

µA

±150

Reve

rse

Batte

ry a

nd C

urre

nt P

rote

ctio

n8-

pin

MSO

P, 8

-pin

SO

IC, 3

-pin

SO

T-22

3M

IC55

2450

02.

55.

51.

2, 1

.8, 2

.8,3

.0, 3

.326

038

µA

±265

Low

Noi

se4-

pin

UDFN

MIC

3910

010

002.

2516

1.8,

2.5

, 3.3

, 5.0

410

6.5

mA

±155

Reve

rse

Batte

ry a

nd C

urre

nt P

rote

ctio

n3-

pin

SOT-

223

MIC

2915

115

002.

2526

3.3,

5.0

, 12

350

22 m

A±1

Load

Dum

p, R

ever

se C

urre

nt P

rote

ctio

n5-

pin

TO-2

20, 5

-pin

DDP

AKM

IC29

301

3000

2.25

263.

3, 5

.0, 1

237

037

mA

±1–

Load

Dum

p, R

ever

se C

urre

nt P

rote

ctio

n5-

pin

TO-2

20, 5

-pin

DDP

AKM

IC29

751

7500

2.5

263.

3, 5

.042

512

0 m

A±1

–Lo

ad D

ump,

Rev

erse

Cur

rent

Pro

tect

ion

5-pi

n TO

-247

www.microchip.com24

Dis

play

and

LED

Driv

ers:

Ele

ctro

lum

ines

cent

Bac

klig

ht D

river

s

Part

#Ty

peIn

put V

olta

ge M

in. (

V)In

put V

olta

ge M

ax. (

V)N

omin

al O

utpu

t Vo

ltage

(V)

Max

. Sw

itch

Res

ista

nce

(Ω)

Out

put R

egul

atio

nM

ax. L

amp

Size

Pe

r Dev

ice

(in2)

Pack

ages

16-S

egm

ent D

river

s

HV5

0916

-Seg

men

t Driv

ers

25.

5±5

0 to

±20

0–

–6.

532

-pin

VQ

FN

Sing

le L

amp

Driv

ers

HV8

33Si

ngle

Lam

p Dr

iver

1.8

6.5

±90

4Y

128-

pin

MSO

PH

V852

Sing

le In

duct

orles

s La

mp

Drive

r2.

45

±80

–Y

1.5

10-p

in W

DFN,

8-p

in M

SOP

HV8

59Si

ngle

Lam

p Dr

iver

1.8

5±1

056

Y5

8-pi

n W

DFN,

8-p

in M

SOP

Dua

l Lam

p D

river

s

HV8

61Du

al La

mp

Drive

rs2.

54.

5±9

07

Y5

16-p

in W

QFN

Dis

play

and

LED

Driv

ers:

LED

Driv

ers

Part

#To

polo

gyIn

put V

olta

ge (V

)D

imm

ing

Iq T

yp. (

mA)

Switc

hing

Fre

quen

cy (H

z)Sw

itchi

ng M

OSF

ETD

ither

edIL

ED A

ccur

acy

Vfb

(V)

Pack

ages

Gen

eral

Pur

pose

LED

Driv

ers

HV9

801A

Buck

15–4

504-

Leve

l Sw

itch

1.0

100k

Exte

rnal

FET

–N/

A0.

2516

-pin

SO

IC 1

50 m

il, 8-

pin

SOIC

150

mil

HV9

803B

Buck

7–13

.2PW

M/L

inea

r1.

510

0kEx

tern

al FE

T–

±2%

0.28

8-pi

n SO

IC 1

50 m

ilH

V980

52-

Stag

e10

2–26

5–

2.5

370k

0.7A

FET

–N/

A1.

2510

-pin

MSO

PH

V981

00/H

V981

01Bu

ck -

Boos

t9.

5-17

.5–

0.2

320k

Exte

rnal

FET

–±5

%0.

26-

pin

SOT2

3H

V991

0B/H

V991

0CBu

ck8–

450/

15–4

50PW

M/L

inea

r1.

010

0kEx

tern

al FE

T–

±5%

0.25

16-p

in S

OIC

150

mil,

8-pi

n SO

IC 1

50 m

ilH

V991

8/H

V991

9BBu

ck4.

5–40

PWM

1.5

2M0.

7A F

ET/E

xt. F

ET–

±5%

0.23

8-pi

n W

DFN

HV9

930

Ćuk

8–20

0PW

M1.

0Va

riabl

eEx

tern

al FE

T–

N/A

0.12

8-pi

n SO

IC 1

50 m

ilH

V996

1/H

V986

1ABu

ck8-

450/

15–4

50PW

M/L

inea

r1.

510

0kEx

tern

al FE

T–

±3%

0.27

16-p

in S

OIC

150

mil,

8-pi

n SO

IC 1

50 m

ilM

IC32

02Bu

ck6–

37PW

M1.

2Hy

st to

1.0

M1A

FET

Y±5

%2

8-pi

n SO

ICM

IC32

30/1

/2Bo

ost

6–45

PWM

3.2

Prog

ram

mab

leEx

tern

al FE

TO

ptio

nal

±3%

0.25

10-p

in M

SOP,

12-

pin

VDFN

, 16-

pin

TSSO

P EP

HV9

6001

8–60

Exte

rnal

FET

Extra

Wid

e Ra

nge

PWM

and

Ana

log

Yes

16/S

OIC

, 16/

QFN

Dis

play

and

LED

Driv

ers:

LED

Driv

ers

Part

#Vi

n (V

)Vo

ut (

V)O

uput

Cur

rent

(mA)

Dim

min

gPa

ralle

labl

eFe

atur

esPa

ckag

es

Line

ar R

egul

ator

s

CL2

5.0–

905.

0–90

20Ex

tern

al FE

TYe

s–

TO-2

52-3

, TO

-92-

3, S

OT-

89-3

CL2

20Bu

ck5.

0–22

020

Exte

rnal

FET

Yes

–TO

-252

-3, T

O-2

20-3

CL3

206.

5–90

4.0–

9020

PWM

Yes

OTP

, Sep

arat

e EN

ABLE

Pin

SOIC

-8 w

ith H

eat S

lug

Dis

play

and

LED

Driv

ers:

LED

Driv

ers

Part

#Vi

n (V

)#

of W

hite

LED

sD

imm

ing

Iq (m

A)Vd

ro

pou

tled

@ 2

0 m

AIL

ED M

atch

ing

Ext L

DO

sVd

ro

pou

tIQ

LDO

Com

men

tsPa

ckag

es

Line

ar L

ED D

river

s

MIC

2860

-2D

3-5.

52

@ 3

0.2

mA

1-W

ire, 3

2-St

eps

0.7

52 m

V±0

.5%

––

–6-

pin

SC70

, 6-p

in S

OT-

23M

IC28

60-2

P Bu

ck2

@ 3

0.2

mA

PWM

dow

n to

250

Hz

0.7

52 m

V±0

.5%

––

–6-

pin

SC70

, 6-p

in S

OT-

23M

IC48

113-

5.5

6 @

50

mA

PWM

(200

Hz–

500

kHz)

1.7

100

mV

@ 5

0 m

A±1

.0%

––

–DA

M10

-pin

MSO

PM

IC48

123-

5.5

6 @

100

mA

PWM

(200

Hz–

500

kHz)

3.2

190

mV

@ 1

00 m

A±1

.0%

––

–DA

M10

-pin

eM

SOP

Dis

play

and

LED

Driv

ers:

LED

Driv

ers

Part

#Vi

n (V

AC)

Vou

t (V)

Oup

ut C

urre

nt (P

eak

mA)

Dim

min

gPa

ralle

labl

eFe

atur

esPa

ckag

es

Sequ

entia

l LED

Driv

ers

CL8

800

90–2

7570

–350

115

Exte

rnal

Dim

mer

Yes

6-St

age

QFN

-33

CL8

801

90–2

7570

–350

200

Exte

rnal

Dim

mer

Yes

4-St

age

QFN

-33

CL8

8020

90–1

3570

–190

115

Exte

rnal

Dim

mer

Yes

4-Ta

pSO

IC-8

EP

CL8

8030

90–3

20Ex

tern

al Di

mm

erYe

s4-

Tap,

ALR

, OTP

, Iou

t FET

Dep

ende

nt10

-Ld

DFN

CL8

8031

90–3

20Ex

tern

al Di

mm

erYe

s6-

Tap,

ALR

, OTP

, Io

FET

Depe

nden

t10

-Ld

DFN

Focus Product Selector Guide 25

Hig

h-Vo

ltage

Inte

rfac

e: D

river

Arr

ays

Part

#O

utpu

t Cha

nnel

sVo

ut O

pera

ting

(V) -

Tra

nsie

ntVo

ut O

pera

ting

(V) -

Sus

tain

edIn

put S

truc

ture

Out

put S

truc

ture

Iou

t per

Cha

nnel

(mA)

Min

. Dat

a C

lock

(MH

z)Pa

ckag

es

Sour

ce

HV5

7009

6495

85Se

rial

P-Ch

Ope

n Dr

ain−2

(Pro

gram

mab

le)16

80-p

in P

QFP

MIC

2981

/82

850

50Pa

ralle

lDa

rlingt

on O

pen

Emitt

er−5

00–

18-p

in P

DIP,

18-

pin

SOIC

300

mil

Sink

HV5

222

3225

022

5Se

rial

N-Ch

Ope

n Dr

ain10

08

44-p

in C

ERQ

UAD,

44-

pin

PLCC

, 44-

pin

PQFP

HV5

630

3231

530

0Se

rial

N-Ch

Ope

n Dr

ain10

08

44-p

in P

LCC

MIC

58P0

18

8080

Para

llel

Darlin

gton

Ope

n Co

llect

or40

0–

24-p

in S

OIC

300

mil,

28-p

in P

LCC

Sour

ce-S

ink

HV5

0764

320

300

Seria

lHa

lf-Br

idge

±1.0

8

80-p

in P

QFP

HV5

082

6045

Para

llel

Half-

Brid

ge−2

.8, +

0.38

–8-

pin

SOIC

150

mil

HV5

138

275

250

Seria

lHa

lf-Br

idge

±20

824

-pin

SO

IC 3

00 m

il, 32

-pin

WQ

FNH

V579

0864

9080

Seria

lHa

lf-Br

idge

−1.2

58

80-p

in P

QFP

HV5

8296

8580

Seria

lHa

lf-Br

idge

± 75

3016

9-pi

n TF

BGA

HV5

8312

890

80Se

rial

Half-

Brid

ge±3

040

169-

pin

TFBG

AH

V681

010

9080

Seria

lHa

lf-Br

idge

−250

520

-pin

SO

IC 3

00 m

ilH

V722

440

260

240

Seria

lHa

lf-Br

idge

±70

364

-pin

PQ

FPH

V762

032

225

200

Seria

lHa

lf-Br

idge

±50

1064

-pin

PQ

FP

Hig

h-Vo

ltage

Inte

rfac

e: A

mpl

ifier

s an

d M

EMS

Driv

ers

Part

#O

utpu

t Cha

nnel

sSl

ew R

ate

(V/µ

s)C

lose

d Lo

op G

ain

(V/V

)Fe

edba

ck R

esis

tanc

e (M

Ω)

Sour

ce C

urre

nt M

ax. (

µA)

Sink

Cur

rent

Max

. (µA

)O

utpu

t Cap

aciti

ve L

oad

Max

. (pF

)Pa

ckag

es

HV2

5632

272

1271

571

530

0010

0-pi

n M

QFP

HV2

644

966

.75.

330

0030

0015

24-p

in T

SSO

PH

V265

40.

0282

4.9

3000

3000

200

TSSO

P-24

HV5

6020

0.2

751.

996

000

1670

00N/

AO

CP F

lag to

Hos

t Micr

o43

-Ld.

7m

mx7

mm

VQ

FNH

V560

220.

275

1.9

9600

016

7000

N/A

OCP

Flag

to H

ost M

icro

20-L

d. 4

mm

x 4

mm

VQ

FN

Hig

h-Vo

ltage

Inte

rfac

e: M

OSF

ETs

- Int

erfa

ce

Part

#BV

dsx

Min

. (V)

Rd

s (o

n) M

ax. (

Ω)

Vgs

(off

) Min

. (V)

Vgs

(off

) Max

. (V)

Pack

ages

Dep

letio

n-M

ode

N-C

hann

el

LND

019

1.4

−0.8

−35-

pin

SOT-

23D

N15

0990

6−1

.8−3

.53-

pin

SOT-

89, 5

-pin

SO

T-23

DN

2625

250

3.5

−1.5

−2.1

8-pi

n VD

FN, 3

-pin

DPA

KD

N25

3030

012

−1−3

.53-

pin

TO-9

2, 3

-pin

SO

T-89

DN

2450

500

10−1

.5−3

.53-

pin

DPAK

, 3-p

in S

OT-

89LN

D15

050

010

00−1

−33-

pin

TO-9

2, 3

-pin

SO

T-89

, 3-p

in S

OT-

23D

N24

7070

042

−1.5

−3.5

3-pi

n DP

AK

Hig

h-Vo

ltage

Inte

rfac

e: M

OSF

ETS

Inte

rfac

e

Part

#BV

dss

Min

. (V)

Rd

s (o

n) M

ax. (

Ω)

Cis

s M

ax. (

pF)

Vgs

(th) M

ax. (

V)Pa

ckag

es

Enha

ncem

ent-

Mod

e N

-Cha

nnel

TN07

0220

1.3

200

1.0

3-pi

n TO

-92

TN01

0440

2.0

701.

63-

pin

TO-9

2, 3

-pin

SO

T-89

VN08

0880

4.0

502.

03-

pin

TO-9

2VN

2210

100

0.4

500

2.4

3-pi

n TO

-92,

3-p

in T

O-3

9TN

0620

200

6.0

150

1.6

3-pi

n TO

-92

TN26

4040

05.

022

52.

03-

pin

DPAK

, 3-p

in T

O-9

2, 8

-pin

SO

IC 1

50 m

ilVN

2450

500

13.0

150

4.0

3-pi

n TO

-92,

3-p

in S

OT-

89VN

2460

600

20.0

150

4.0

3-pi

n TO

-92,

3-p

in S

OT-

89

www.microchip.com26

Hig

h-Vo

ltage

Inte

rfac

e: M

OSF

ETS

Inte

rfac

e

Part

#BV

dss

Min

. (V)

Rd

s (o

n) M

ax. (

Ω)

Cis

s M

ax. (

pF)

Vgs

(th) M

ax. (

V)Pa

ckag

es

Enha

ncem

ent-

Mod

e P-

Cha

nnel

TP25

02−2

02.

012

5−2

.43-

pin

SOT-

89TP

0604

−40

2.0

150

−2.4

3-pi

n TO

-92

VP08

08−8

05.

015

0−4

.53-

pin

TO-9

2TP

2510

−100

3.5

125

−2.4

3-pi

n SO

T-89

TP25

20−2

0012

.012

5−2

.03-

pin

SOT-

89TP

2640

−400

15.0

300

−2.0

3-pi

n TO

-92,

8-p

in S

OIC

150

mil

VP24

50−5

0030

.019

0−3

.53-

pin

TO-9

2, 3

-pin

SO

T-89

Hig

h-Vo

ltage

Inte

rfac

e: M

OSF

ETs

Inte

rfac

e

Part

#BV

dss

N-C

hann

el (V

)BV

dss

P-C

hann

el (V

)R

ds(

on) N

-Cha

nnel

Max

. (Ω

)R

ds(

on) P

-Cha

nnel

Max

. (Ω

)Vg

s(th

) Max

. (V)

Det

ails

Pack

ages

Com

plim

enta

ry (E

nhan

cem

ent M

ode

MO

SFET

Arr

ays)

TC63

2020

0–2

007.

08.

02.

0N-

and

P-C

hann

el Pa

ir8-

pin

SOIC

, 8-p

in V

DFN

TC63

2120

0–2

007.

08.

02.

0N-

and

P-C

hann

el Pa

ir8-

pin

SOIC

, 8-p

in V

DFN

TC82

2020

0–2

005.

36.

52.

02

N- a

nd P

-Cha

nnel

Pairs

12-p

in V

DFN

Hig

h-Vo

ltage

Inte

rfac

e: A

pplic

atio

n Sp

ecifi

c

Part

#D

C/D

CIn

put V

olta

ge M

in. (

V)In

put V

olta

ge M

ax. (

V)O

utpu

t Vol

tage

Min

. (Vr

ms)

Out

put V

olta

ge M

ax. (

Vrm

s)Lo

ad M

in. (

pF)

Load

Max

. (pF

)Pa

ckag

es

Liqu

id L

ens

Driv

er

HV8

92In

tern

al Ch

arge

Pum

p2.

655.

510

6010

020

010

-pin

WDF

N

Hig

h-Vo

ltage

Inte

rfac

e: A

pplic

atio

n Sp

ecifi

c

Part

##

of C

hann

els

Inpu

t Vol

tage

Min

. (V)

Inpu

t Vol

tage

Max

. (V)

Out

put V

olta

ge M

in. (

V)O

utpu

t Vol

tage

Max

. (V)

Inpu

t to

Out

put I

sola

tion

(V)

Pack

ages

Com

plim

enta

ry M

OSF

ET L

EVEL

Tra

nsla

tor D

river

HT0

440

23.

155.

56

10±4

0010

-pin

VDF

N, 8

-pin

SO

IC 1

50 m

ilH

T074

01

3.15

5.5

4.5

8.5

±400

8-pi

n SO

IC 1

50 m

il

Hig

h-Vo

ltage

Inte

rfac

e: A

pplic

atio

n Sp

ecifi

c

Part

#Vi

n (V

)G

ain

Ris

e an

d Fa

ll Ti

me

(µs)

Vsen

se M

ax. (

mV)

Qui

esce

nt C

urre

nt M

ax. (

µA)

Pack

ages

Hig

h-Si

de C

urre

nt M

onito

r

HV7

800

8.0–

450

Fixe

d, 1

0.7–

2.0

500

505-

pin

SOT-

23H

V780

18.

0–45

0Fi

xed,

50.

7–2.

050

050

5-pi

n SO

T-23

HV7

802

8.0–

450

Adju

stab

le0.

7–1.

450

050

8-pi

n M

SOP

Hig

h-Vo

ltage

Inte

rfac

e: A

pplic

atio

n Sp

ecifi

c

Part

#Vi

n M

in.

(V)

Vin M

ax.

(V)

Iin M

ax.

(mA)

Osc

illat

or F

requ

ency

M

in. (

kHz)

Osc

illat

or F

requ

ency

M

ax. (

kHz)

Osc

illat

or F

requ

ency

Fs

ync M

ax. (

kHz)

Max

. Out

put

Dut

y C

ycle

(%)

Typi

cal C

urre

nt

Sens

e Pu

ll-In

(V)

Typi

cal C

urre

nt

Sens

e H

old

Exte

rnal

Adj

usta

ble

Reg

ulat

or

Out

put V

olta

ge (V

)Ex

tern

al A

djus

tabl

e R

egul

ator

O

utpu

t Cur

rent

(mA)

Pack

ages

Rel

ay D

river

and

Con

trol

ler

HV9

901

1045

02

2014

015

099

.50.

883

Adju

stab

le2.

0–5.

50–

1.0

14-p

in S

OIC

Focus Product Selector Guide 27

Line

ar: O

p Am

ps

Prod

uct

# Pe

r Pa

ckag

e G

BWP

(MH

z)Iq

Typ

ical

(μ

A)

Vos

Max

(m

V)

Ope

ratin

g Vo

ltage

(V)

Pack

ages

Pr

oduc

t #

Per

Pack

age

GBW

P (M

Hz)

Iq T

ypic

al

(μA)

Vo

s M

ax

(mV)

O

pera

ting

Volta

ge (V

) Pa

ckag

es

MC

P661

/2/3

/4/5

/91/

2/1/

4/2/

460

6000

82.

5 to

5.5

SOIC

, MSO

P, D

FN, T

SSO

P, Q

FN, S

OT

MC

P6V0

1/2/

31/

2/1

1.3

300

0.00

21.

8 to

5.5

SOIC

, DFN

, TDF

NM

CP6

51/1

S/2/

3/4/

5/9

1/1/

2/1/

4/2/

450

6000

0.

2 2.

5 to

5.5

SO

IC, M

SOP,

DFN

, TSS

OP,

QFN

, SO

T M

CP6

V06/

7/8

1/2/

11.

330

00.

003

1.8

to 5

.5SO

IC, D

FN, T

DFN

MC

P631

/2/3

/4/5

/91/

2/1/

4/2/

424

2500

82.

5 to

5.5

SOIC

, MSO

P, D

FN, T

SSO

P, Q

FN, S

OT

MC

P607

1/2/

41/

2/4

1.2

110

0.15

1.8

to 6

.0

SOIC

, TSS

OP,

DFN

, SO

TM

CP6

21/1

S/2/

3/4/

5/9

1/1/

2/1/

4/2/

420

2500

0.2

2.5

to 5

.5SO

IC, M

SOP,

DFN

, TSS

OP,

QFN

, SO

TM

CP6

H01

/2/4

1/2/

41.

213

54.

53.

5 to

16

SOIC

, TSS

OP,

TDF

N, S

OT,

SC7

0M

CP6

H91

/2/4

1/2/

410

2000

43.

5 to

12.

0DF

N, S

OIC

, TSS

OP

MC

P600

1/2/

41/

2/4

110

0 4.

51.

8 to

6.0

PD

IP, S

OIC

, MSO

P, T

SSO

P, T

DFN,

SO

T, S

C70

MC

P6V9

1/2/

41/

2/4

1011

000.

009

2.4

to 5

.5TS

SOP,

MSO

P, T

DFN,

SO

T, S

C70

MC

P640

1/2/

41/

2/4

145

4.5

1.8

to 6

.0SO

IC, T

SSO

P, T

DFN,

SO

T, S

C70

MC

P602

1/2/

3/4

1/2/

1/4

1010

000.

52.

5 to

5.5

PDIP,

SO

IC, M

SOP,

TSS

OP,

SO

TM

CP6

V61/

2/4

1/2/

41

800.

008

1.8

to 5

.5TS

SOP,

MSO

P, T

DFN,

SO

T, S

C70

MC

P629

1/2/

3/4/

5 1/

2/1/

4/2

1010

00

32.

4 to

6.0

PDIP,

SO

IC, M

SOP,

TSS

OP,

SO

TM

CP6

061/

2/4

1/2/

40.

7360

0.15

1.8

to 6

.0

SOIC

, TSS

OP,

DFN

, SO

TM

CP6

491/

2/4

1/2/

47.

553

0 1.

5 2.

4 to

5.5

SOT,

SC7

0, M

SOP,

TDF

N, S

OIC

, TSS

OP

MC

P624

1/2/

4 1/

2/4

0.55

50

5 1.

8 to

5.5

PD

IP, S

OIC

, MSO

P, T

SSO

P, T

DFN,

SO

T, S

C70

MC

P6H

81/2

/41/

2/4

5.5

700

43.

5 to

12.

0DF

N, S

OIC

, TSS

OP

MC

P605

1/2/

4 1/

2/4

0.38

530

0.

15

1.8

to 6

.0

SOIC

, TSS

OP,

DFN

, SO

TM

CP6

V81/

2/4

1/2/

45

500

0.00

92.

2 to

5.5

TSSO

P, M

SOP,

TDF

N, S

OT,

SC7

0M

CP6

V31/

2/4

1/2/

40.

323

0.00

81.

8 to

5.5

TSSO

P, M

SOP,

TDF

N, S

OT,

SC7

0M

CP6

281/

2/3/

4/5

1/2/

1/4/

25

445

32.

2 to

6.0

PDIP,

SO

IC, M

SOP,

TSS

OP,

SO

TM

CP6

231/

2/4

1/2/

40.

320

5

1.

8 to

6.0

PD

IP, S

OIC

, MSO

P, T

SSO

P, T

DFN,

SO

T, S

C70

MC

P648

1/2/

41/

2/4

424

0 1

.52.

2 to

5.5

SOT,

SC7

0, M

SOP,

TDF

N, S

OIC

, TSS

OP

MC

P616

/7/8

/9

1/2/

1/4

0.19

19

0.15

2.

3 to

5.5

PD

IP, S

OIC

, MSO

P, T

SSO

PM

CP6

286

13.

554

01.

52.

2 to

5.5

SOT

MC

P606

/7/8

/91/

2/1/

40.

155

19

0.25

2.

5 to

6.0

PD

IP, S

OIC

, TSS

OP,

SO

TM

CP6

01/2

/3/4

1/

2/1/

42.

823

0 2

2.7

to 6

.0PD

IP, S

OIC

, TSS

OP,

SO

TM

CP6

141/

2/3/

4 1/

2/1/

40.

10.

6 3

1.4

to 6

.0

PDIP,

SO

IC, M

SOP,

TSS

OP,

SO

TM

CP6

H71

/2/4

1/2/

42.

748

0 4

3.5

to 1

2.0

DFN,

SO

IC, T

SSO

PM

CP6

421/

2/4

1/2/

40.

094.

41

1.8

to 5

.5SO

T, S

C70,

MSO

P, S

OIC

, TSS

OP

MC

P627

1/2/

3/4/

51/

2/1/

4/2

217

03

2.0

to 6

.0PD

IP, S

OIC

, MSO

P, T

SSO

P, S

OT

MC

P6V1

1/2/

41/

2/4

0.08

7.5

0.00

81.

6 to

5.5

TSSO

P, M

SOP,

TDF

N, S

OT,

SC7

0M

CP6

471/

2/4

1/2/

42

100

1.5

2 to

5.5

SOT,

SC7

0, M

SOP,

TDF

N, S

OIC

, TSS

OP

MC

P604

1/2/

3/4

1/2/

1/4

0.01

40.

6 3

1.4

to 6

.0

PDIP,

SO

IC, M

SOP,

TSS

OP,

SO

TM

CP6

V26/

7/8

1/2/

12

620

0.00

22.

3 to

5.5

SOIC

, MSO

P, D

FNM

CP6

031/

2/3/

4 1/

2/1/

40.

010.

9 0.

15

1.8

to 5

.5

SOIC

, MSO

P, T

SSO

P, D

FN, S

OT

MC

P6V7

1/2/

41/

2/4

217

00.

008

2.0

to 5

.5TS

SOP,

MSO

P, T

DFN,

SO

T, S

C70

MC

P644

1/2/

41/

2/4

0.00

90.

454.

51.

4 to

6.0

SOIC

, MSO

P, T

SSO

P, S

OT,

SC7

0M

CP6

V51

12

470

0.01

54.

5 to

45

SOT,

MSO

P Line

ar: I

nstr

umen

tatio

n Am

ps

Prod

uct

Band

wid

th (k

Hz)

Iq T

ypic

al (µ

A)Vo

s M

ax (µ

V)O

pera

ting

Volta

ge (V

)Fe

atur

es

Pack

ages

MC

P6N

1150

080

035

01.

8 to

5.5

Rail-

to-ra

il inp

ut/o

utpu

t, en

able

pin,

mCa

l tec

hnol

ogy

SOIC

, TDF

NM

CP6

N16

500

1100

171.

8 to

5.5

Rail-

to-ra

il inp

ut/o

utpu

t, en

able

pin,

enh

ance

d EM

I reje

ctio

nM

SOP,

DFN

Line

ar: C

urre

nt S

ense

Am

plifi

ers

Part

##

per

Pack

age

Inpu

t Com

mon

-M

ode

Ran

ge (V

)Vo

s M

ax (u

V)Vo

s D

rift M

ax (n

V/°C

)M

ax G

ain

Erro

r (%

)Ba

ndw

idth

(kH

z)Iq

Max

(m

A)O

pera

ting

Volta

ge (V

)Te

mpe

ratu

re

Ran

ge (°

C)

Feat

ures

Pack

ages

MC

P6C

021

3 to

65

16 (G

=20)

, 14

(G=5

0), 1

2 (G

=100

)85

(G=2

0), 7

0 (G

=50)

, 65,

(G

=100

)1.

650

0 (G

=20)

, 500

(G=5

0),

350

(G=1

00)

0.75

2 to

5.5

-40

to +

125

Bidi

rect

iona

l Cur

rent

Sen

se A

mpl

ifier,

Enha

nced

EM

I Reje

ctio

n6-

pin

SOT-

23

MC

P6C

041

3 to

52

30 (G

=20)

, 27

(G=5

0), 2

4 (G

=100

)18

0 (G

=20)

, 140

(G=5

0),

130

(G=1

00)

1.6

500

(G=2

0), 5

00 (G

=50)

, 35

0 (G

=100

)0.

842

to 5

.5-4

0 to

+12

5Bi

dire

ctio

nal C

urre

nt S

ense

Am

plifie

r, En

hanc

ed E

MI R

eject

ion

6-pi

n SO

T-23

Mix

ed S

igna

l: Su

cces

sive

App

roxi

mat

ion

Reg

iste

r (SA

R) A

nalo

g-to

-Dig

ital C

onve

rter

s

Prod

uct

Res

olut

ion

(bits

)M

axim

um S

ampl

ing

Rat

e (s

ampl

es/s

ec)

# of

Inpu

t Cha

nnel

sIn

put T

ype

Inte

rfac

eM

ax. S

uppl

y C

urre

nt (μ

A)Te

mpe

ratu

re R

ange

(°C

)Pa

ckag

es

MC

P302

1/32

2110

/12

22k

1Si

ngle-

ende

d I² C

250

−40

to +

125

SOT-

23A

MC

P300

1/2/

4/8

10

200k

1/2/

4/8

Sing

le-en

ded

SPI

500–

550

−40

to +

85

PDIP,

SO

IC, M

SOP,

TSS

OP

MC

P320

1/2/

4/8

12

100k

1/2/

4/8

Sing

le-en

ded

SPI

400–

550

−40

to +

85

PDIP,

SO

IC, M

SOP,

TSS

OP

MC

P330

1/2/

413

10

0k1/

2/4

Diffe

rent

ialSP

I 45

0 −4

0 to

+85

PD

IP, S

OIC

, MSO

P, T

SSO

PM

CP3

3111

D12

1M1

Diffe

rent

ialSP

I22

50−4

0 to

+85

10-p

in M

SOP,

10-

pin

TDFN

MC

P331

21D

141M

1Di

ffere

ntial

SPI

2250

−40

to +

8510

-pin

MSO

P, 1

0-pi

n TD

FNM

CP3

3131

D16

1M1

Diffe

rent

ialSP

I22

50−4

0 to

+85

10-p

in M

SOP,

10-

pin

TDFN

www.microchip.com28

Mix

ed S

igna

l: D

igita

l-to-

Anal

og C

onve

rter

s

Prod

uct

Res

olut

ion

(Bits

) D

AC

Cha

nnel

sM

emor

yD

NL

(±LS

b)

INL

(±LS

b)Pa

ckag

es

Prod

uct

Res

olut

ion

(Bits

) D

AC

Cha

nnel

sM

emor

yD

NL

(±LS

b)

INL

(±LS

b)Pa

ckag

es

MC

P48F

EB01

/11/

218/

10/1

21

EEPR

OM

0.25

/0.5

/10.

5/1.

5/6

MSO

P-8

MC

P47D

A16

1Vo

latile

0.35

0.7

SOT2

3-6,

SC7

0-6

MC

P48F

EB02

/12/

228/

10/1

22

EEPR

OM

0.25

/0.5

/10.

5/1.

5/6

MSO

P-8

MC

P470

6/16

/26

8/10

/12

1EE

PRO

M0.

05/0

.188

/0.7

50.

907/

3.62

5/14

.5SO

T23-

6, 2

× 2

DFN

-6M

CP4

8FVB

01/1

1/21

8/10

/12

1Vo

latile

0.25

/0.5

/10.

5/1.

5/6

MSO

P-8

MC

P472

512

1EE

PRO

M0.

7514

.5SO

T23-

6M

CP4

8FVB

02/1

2/22

8/10

/12

2Vo

latile

0.25

/0.5

/10.

5/1.

5/6

MSO

P-8

MC

P472

812

4EE

PRO

M0.

7513

MSO

P-10

MC

P47F

EB01

/11/

218/

10/1

21

EEPR

OM

0.25

/0.5

/10.

5/1.

5/6

MSO

P-8

MC

P480

1/11

/21

8/10

/12

1Vo

latile

0.5/

0.5/

0.75

1/3.

5/12

MSO

P-8,

2 ×

3 D

FN-8

, SO

IC-8

, PDI

P-8

MC

P47F

EB02

/12/

228/

10/1

22

EEPR

OM

0.25

/0.5

/10.

5/1.

5/6

MSO

P-8

MC

P480

2/12

/22

8/10

/12

2Vo

latile

0.5/

0.5/

0.75

1/3.

5/12

MSO

P-8,

2 ×

3 D

FN-8

, SO

IC-8

, PDI

P-8

MC

P47F

VB01

/11/

218/

10/1

21

Volat

ile0.

25/0

.5/1

0.5/

1.5/

6M

SOP-

8M

CP4

901/

11/2

18/

10/1

21

Volat

ile0.

5/0.

5/0.

751/

3.5/

12M

SOP-

8, 2

× 3

DFN

-8, S

OIC

-8, P

DIP-

8M

CP4

7FVB

02/1

2/22

8/10

/12

2Vo

latile

0.25

/0.5

/10.

5/1.

5/6

MSO

P-8

MC

P490

2/12

/22

8/10

/12

2Vo

latile

0.5/

0.5/

0.75

1/3.

5/12

MSO

P-8,

2 ×

3 D

FN-8

, SO

IC-8

, PDI

P-8

MC

P47C

VB01

/11/

218/

10/1

21

Volat

ile0.

1/0.

25/1

0.1/

0.25

/110

-pin

MSO

P, 1

6-pi

n Q

FN, 1

0-pi

n DF

NM

CP4

8CVB

01/1

1/21

8/10

/12

1Vo

latile

0.1/

0.25

/10.

1/0.

25/1

10-p

in M

SOP,

16-

pin

QFN

, 10-

pin

DFN

MC

P47C

VB02

/12/

228/

10/1

22

Volat

ile0.

1/0.

25/1

0.1/

0.25

/110

-pin

MSO

P, 1

6-pi

n Q

FN, 1

0-pi

n DF

NM

CP4

8CVB

02/1

2/22

8/10

/12

2Vo

latile

0.1/

0.25

/10.

1/0.

25/1

10-p

in M

SOP,

16-

pin

QFN

, 10-

pin

DFN

MC

P47C

MB0

1/11

/21

8/10

/12

1M

TP0.

1/0.

25/1

0.1/

0.25

/110

-pin

MSO

P, 1

6-pi

n Q

FN, 1

0-pi

n DF

NM

CP4

8CM

B01/

11/2

18/

10/1

21

MTP

0.1/

0.25

/10.

1/0.

25/1

10-p

in M

SOP,

16-

pin

QFN

, 10-

pin

DFN

MC

P47C

MB0

2/12

/22

8/10

/12

2M

TP0.

1/0.

25/1

0.1/

0.25

/110

-pin

MSO

P, 1

6-pi

n Q

FN, 1

0-pi

n DF

NM

CP4

8CM

B02/

12/2

28/

10/1

22

MTP

0.1/

0.25

/10.

1/0.

25/1

10-p

in M

SOP,

16-

pin

QFN

, 10-

pin

DFN

Mix

ed S

igna

l: En

ergy

Met

er a

nd P

ower

Mon

itorin

g IC

s

Prod

uct

Dyn

amic

Ra

nge

Typi

cal

Accu

racy

ADC

C

hann

els

ADC

Re

solu

tion

SIN

ADG

ain

Sele

ctio

nO

utpu

t Ty

peAn

alog

Vd

d (V

)D

igita

l Vd

d

(V)

Tem

pera

ture

Ra

nge

(°C)

Feat

ures

Pack

ages

MC

P391

8/10

/19

1000

0:1

0.1%

1/2/

324

94.5

dB

1 to

32

SPI/2

-Wire

2.7–

3.6

2.7–

3.6

–40

to +

125

Two

Chan

nel,

24-b

it AF

E w

ith P

hase

Cor

rect

ion,

Pro

gram

mab

le Da

ta R

ate

up to

12

5 kS

PS, 1

6-bi

t CRC

, Reg

ister

Map

Loc

k, 2

-wire

Inte

rface

4 m

m x

4 m

m

QFN

-20,

SSO

P-20

MC

P391

1/12

/13/

1410

000:

10.

1%2/

4/6/

824

94.5

dB

1 to

32

SPI

2.7–

3.6

2.7–

3.6

–40

to +

125

Two

Chan

nel,

24-b

it AF

E w

ith P

hase

Cor

rect

ion,

Pro

gram

mab

le Da

ta R

ate

up to

12

5 kS

PS, 1

6-bi

t CRC

, Reg

ister

Map

Loc

k4

mm

x 4

mm

Q

FN-2

0, S

SOP-

20

MC

P39F

511N

4000

:10.

5%3

2494

.5 d

B1

to 3

2UA

RT/

Sing

le-w

ire2.

7–3.

6 2.

7–3.

6 –4

0 to

+12

5Du

al-ch

anne

l pow

er m

onito

ring

IC w

ith a

ctive

, rea

ctive

and

app

aren

t pow

er,

activ

e an

d re

activ

e en

ergy

, PF,

RMS

curre

nt/v

olta

ge, f

requ

ency

, eve

nt

notifi

catio

ns, E

EPRO

M, P

WM

out

put

5 m

m x

5 m

m

QFN

-28

MC

P39F

511A

4000

:10.

1%2

2494

.5 d

B1

to 3

2UA

RT/

Sing

le-w

ire2.

7–3.

6 2.

7–3.

6 –4

0 to

+12

5AC

/DC

Dual-

mod

e Po

wer

mon

itorin

g IC

with

act

ive, r

eact

ive a

nd a

ppar

ent

pow

er, a

ctive

and

reac

tive

ener

gy, P

F, RM

S cu

rrent

/vol

tage

, fre

quen

cy, e

vent

no

tifica

tions

, EEP

ROM

, PW

M o

utpu

t

5 m

m x

5 m

m

QFN

-28

Mix

ed S

igna

l: C

urre

nt/D

C P

ower

Mea

sure

men

t IC

s

Prod

uct

# C

urre

nt

Sens

ors

Des

crip

tion

Full

Scal

e R

ange

(mV)

Cur

rent

M

easu

rem

ent

Max

. Acc

r. (%

)

Effec

tive

Sam

plin

g In

terv

al M

in. t

o M

ax.

(mse

c)

Bus

Volta

ge

Ran

ge (V

)#

Tem

p. M

onito

rs

(Am

bien

t, R

emot

e)Te

mp.

Acc

urac

y Ty

p./M

ax. (

°C)

Aler

t/Th

erm

.Pe

ak

Det

ectio

nIn

terf

ace

Pack

ages

PAC

1710

/20

1/2

Curre

nt/D

C Po

wer

Sen

sor

10, 2

0, 4

0, 8

0±1

2.5

to 2

600

0 to

+40

N/A

N/A

1–

SMBu

s/I² C

10-p

in D

FNPA

C19

211

SMBu

s/I² C

Cur

rent

/Pow

er S

enso

r with

Ana

log

Out

put

100

±12.

5 to

290

00

to +

32N/

AN/

A–

–SM

Bus/

I² C10

-pin

DFN

PAC

1934

4SM

Bus/

I² C C

urre

nt/P

ower

Sen

sor w

ith A

ccum

ulat

or10

0±0

.90.

98 to

125

0 to

+32

N/A

N/A

1–

SMBu

s/I² C

WLC

SP

EMC

1701

/2/4

1Cu

rrent

/DC

Pow

er S

enso

r with

Tem

pera

ture

Mon

itorin

g10

, 20,

40,

80

±12.

5 to

260

0+3

to +

241,

0/1

/3±0

.25/

±1.0

2Y

SMBu

s/I² C

12-p

in Q

FN, 1

0-pi

n M

SOP,

16

-pin

QFN

, 14-

pin

SOIC

Mix

ed S

igna

l: D

igita

l Pot

entio

met

ers

Prod

uct

# of

Tap

s M

emor

y C

hann

els

Inte

rfac

e R

esis

tanc

e (k

Ω)

Tem

pera

ture

Ran

ge (°

C)

Pack

ages

MC

P401

1/12

/13/

14

64Vo

latile

1

Up/D

own

2.1,

5, 1

0, 5

0 −4

0 to

+12

5 DF

N, S

OT-

23

MC

P401

7/18

/19

128

Volat

ile

1I² C

5, 1

0, 5

0, 1

00

−40

to +

125

SC70

MC

P40D

17/D

18/D

19

128

Volat

ile

1I² C

5, 1

0, 5

0, 1

00

−40

to +

125

SC70

MC

P402

1/22

/23/

24

64No

nvol

atile

1

Up/D

own

2.1,

5, 1

0, 5

0 −4

0 to

+12

5 DF

N, S

OT-

23

MC

P414

1/42

12

8No

nvol

atile

1

SPI

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, Q

FN, D

FN

MC

P424

1/42

12

8No

nvol

atile

2

SPI

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, Q

FN, D

FN

MC

P413

1/32

12

8Vo

latile

1

SPI

5, 1

0, 5

0, 1

00

−40

to +

125

QFN

, DFN

MC

P423

1/32

12

8Vo

latile

2

SPI

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, Q

FN, D

FN

MC

P415

1/52

25

6Vo

latile

1

SPI

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, Q

FN, D

FN

Focus Product Selector Guide 29

Mix

ed S

igna

l: D

igita

l Pot

entio

met

ers

Prod

uct

# of

Tap

s M

emor

y C

hann

els

Inte

rfac

e R

esis

tanc

e (k

Ω)

Tem

pera

ture

Ran

ge (°

C)

Pack

ages

MC

P41H

V31

128

Volat

ile1

SPI

5, 1

0, 5

0, 1

00−4

0 to

+12

5TS

SOP,

QFN

MC

P41H

V51

256

Volat

ile1

SPI

5, 1

0, 5

0, 1

00−4

0 to

+12

5TS

SOP,

QFN

MC

P416

1/62

25

6No

nvol

atile

1

SPI

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, Q

FN, D

FN

MC

P425

1/52

25

6Vo

latile

2

SPI

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, Q

FN, D

FN

MC

P426

1/62

25

6No

nvol

atile

2

SPI

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, Q

FN, D

FN

MC

P434

1/42

129

Nonv

olat

ile4

SPI

5, 1

0, 5

0, 1

00−4

0 to

+12

5TS

SOP,

QFN

MC

P436

1/62

257

Nonv

olat

ile4

SPI

5, 1

0, 5

0, 1

00−4

0 to

+12

5TS

SOP,

QFN

MC

P433

1/32

129

Volat

ile4

SPI

5,10

,50,

100

−40

to +

125

TSSO

P, Q

FN

MC

P435

1/52

257

Volat

ile4

SPI

5,10

,50,

100

−40

to +

125

TSSO

P, Q

FN

MC

P443

1/32

129

Volat

ile4

I² C5,

10,

50,

100

−40

to +

125

TSSO

P, Q

FN

MC

P444

1/42

129

Nonv

olat

ile4

I² C5,

10,

50,

100

−40

to +

125

TSSO

P, Q

FN

MC

P445

1/52

257

Volat

ile4

I² C5,

10,

50,

100

−40

to +

125

TSSO

P, Q

FN

MC

P446

1/62

257

Nonv

olat

ile4

I² C5,

10,

50,

102

−40

to +

125

TSSO

P, Q

FN

MC

P453

1/32

128

Volat

ile

1I² C

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, D

FN

MC

P463

1/32

12

8Vo

latile

2

I² C5,

10,

50,

100

−4

0 to

+12

5 M

SOP,

DFN

MC

P454

1/42

12

8No

nvol

atile

1

I² C5,

10,

50,

100

−4

0 to

+12

5 M

SOP,

DFN

MC

P46H

V31

128

Volat

ile1

I² C5,

10,

50,

100

−40

to +

125

TSSO

P, Q

FN

MC

P45H

V51

256

Volat

ile1

I² C5,

10,

50,

100

−40

to +

125

TSSO

P, Q

FN

MC

P464

1/42

128

Nonv

olat

ile

2I² C

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, D

FN

MC

P455

1/52

256

Volat

ile

1I² C

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, D

FN

MC

P465

1/52

256

Volat

ile

2I² C

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, D

FN

MC

P456

1/62

256

Nonv

olat

ile

1I² C

5, 1

0, 5

0, 1

00

−40

to +

125

MSO

P, D

FN

MC

P466

1/62

25

6No

nvol

atile

2

I² C5,

10,

50,

100

−4

0 to

+12

5 M

SOP,

DFN

Mix

ed S

igna

l: D

elta

-Sig

ma

Anal

og-t

o-D

igita

l Con

vert

ers

Prod

uct

Res

olut

ion

(bits

)M

axim

um S

ampl

ing

Rat

e (s

ampl

es/s

ec)

# of

Inpu

t C

hann

els

Inte

rfac

eTy

pica

l Sup

ply

Cur

rent

(μA)

Tem

pera

ture

R

ange

(°C

)Fe

atur

esPa

ckag

es

MC

P346

116

153.

6k2

SPI

930

–40

to +

125

One

Diffe

rent

ial o

r Tw

o Si

ngle-

ende

d In

put C

hann

els, 1

53.6

kSP

S, L

ow-N

oise

16-

Bit D

elta-

Sigm

a AD

Cs3

mm

x 3

mm

UQ

FN-2

0

MC

P346

216

153.

6k4

SPI

930

–40

to +

125

Two

Diffe

rent

ial o

r Fou

r Sin

gle-

ende

d In

put C

hann

els, 1

53.6

kSP

S, L

ow-N

oise

16-

Bit D

elta-

Sigm

a AD

Cs3

mm

x 3

mm

UQ

FN-2

0

MC

P346

416

153.

6k8

SPI

930

–40

to +

125

Four

Diffe

rent

ial o

r Eig

ht S

ingl

e-en

ded

Inpu

t Cha

nnels

, 153

.6 k

SPS,

Low

-Noi

se 1

6-Bi

t Delt

a-Si

gma

ADCs

3 m

m x

3 m

m U

QFN

-20

MC

P356

124

153.

6k2

SPI

930

–40

to +

125

One

Diffe

rent

ial o

r Tw

o Si

ngle-

ende

d In

put C

hann

els, 1

53.6

kSP

S, L

ow-N

oise

24-

Bit D

elta-

Sigm

a AD

Cs3

mm

x 3

mm

UQ

FN-2

0

MC

P356

224

153.

6k4

SPI

930

–40

to +

125

Two

Diffe

rent

ial o

r Fou

r Sin

gle-

ende

d In

put C

hann

els, 1

53.6

kSP

S, L

ow-N

oise

24-

Bit D

elta-

Sigm

a AD

Cs3

mm

x 3

mm

UQ

FN-2

0

MC

P356

424

153.

6k8

SPI

930

–40

to +

125

Four

Diffe

rent

ial o

r Eig

ht S

ingl

e-en

ded

Inpu

t Cha

nnels

, 153

.6 k

SPS,

Low

-Noi

se 2

4-Bi

t Delt

a-Si

gma

ADCs

3 m

m x

3 m

m U

QFN

-20

MC

P391

024

125k

2SP

I/2-W

ire25

00–4

0 to

+12

5Tw

o Ch

anne

l, 12

5 kS

PS, 2

4-bi

t Sim

ulta

neou

sly S

ampl

ing

Delta

-Sig

ma

ADCs

with

2-W

ire M

ode,

AEC

-Q10

0 G

rade

14

mm

x 4

mm

QFN

-20,

SSO

P-20

MC

P391

124

125k

2SP

I25

00–4

0 to

+12

5Tw

o Ch

anne

l, 12

5 kS

PS, 2

4-bi

t Sim

ulta

neou

sly S

ampl

ing

Delta

-Sig

ma

ADCs

, AEC

-Q10

0 G

rade

14

mm

x 4

mm

QFN

-20,

SSO

P-20

MC

P391

224

125k

4SP

I47

00–4

0 to

+12

5Fo

ur C

hann

el, 1

25 k

SPS,

24-

bit S

imul

tane

ously

Sam

plin

g De

lta-S

igm

a AD

Cs, A

EC-Q

100

Gra

de 1

4 m

m x

4 m

m Q

FN-2

0, S

SOP-

20

MC

P391

324

125k

6SP

I74

00–4

0 to

+12

5Si

x Ch

anne

l, 12

5 kS

PS, 2

4-bi

t Sim

ulta

neou

sly S

ampl

ing

Delta

-Sig

ma

ADCs

, AEC

-Q10

0 G

rade

14

mm

x 4

mm

QFN

-20,

SSO

P-20

MC

P391

424

125k

8SP

I98

00–4

0 to

+12

5Ei

ght C

hann

el, 1

25 k

SPS,

24-

bit S

imul

tane

ously

Sam

plin

g De

lta-S

igm

a AD

Cs, A

EC-Q

100

Gra

de 1

4 m

m x

4 m

m Q

FN-2

0, S

SOP-

20

MC

P391

824

125k

1SP

I/2-W

ire13

00–4

0 to

+12

5Si

ngle

Chan

nel,

125

kSPS

, 24-

bit S

imul

tane

ously

Sam

plin

g De

lta-S

igm

a AD

Cs, A

EC-Q

100

Gra

de 1

4 m

m x

4 m

m Q

FN-2

0, S

SOP-

20

MC

P391

924

125k

3SP

I/2-W

ire35

00–4

0 to

+12

5Th

ree

Chan

nel,

125

kSPS

, 24-

bit S

imul

tane

ously

Sam

plin

g De

lta-S

igm

a AD

Cs, A

EC-Q

100

Gra

de 1

4 m

m x

4 m

m Q

FN-2

0, S

SOP-

20

www.microchip.com30

Mix

ed S

igna

l: Pi

pelin

ed A

nalo

g-to

-Dig

ital C

onve

rter

s

Prod

uct

Res

olut

ion

(b

its)

Max

imum

Sa

mpl

ing

Rat

e

(Msa

mpl

es/s

ec)

# of

Inpu

t C

hann

els

Pow

er

Dis

sipa

tion

(mW

)In

terf

ace

Inpu

t Cha

nnel

BW

(MH

z)SN

R

(dB)

SFD

R

(dB)

Tem

pera

ture

R

ange

(°C

)Fe

atur

es

Pack

ages

MC

P37D

10-2

0012

200

133

8Se

rial D

DR L

VDS

or P

arall

el CM

OS

650

6796

−40

to +

85Di

gita

l dow

n-co

nver

ter,

decim

atio

n filt

ers,

noi

se-s

hapi

ng re

quan

tizer

124-

pin

VTLA

, 12

1-pi

n TF

BGA

MC

P372

10-2

0012

200

133

8Se

rial D

DR L

VDS

or P

arall

el CM

OS

650

6796

−40

to +

85De

cimat

ion

filter

s, n

oise

-sha

ping

requ

antiz

er12

4-pi

n VT

LA,

121-

pin

TFBG

A

MC

P37D

11-2

0012

200

8-m

ux, D

iff46

8Se

rial D

DR L

VDS

or P

arall

el CM

OS

1.2,

1.8

71.3

90−4

0 to

+85

Decim

atio

n filt

ers,

dig

ital d

own-

conv

erte

r, no

ise-s

hapi

ng re

quan

tizer

124-

pin

VTLA

, 12

1-pi

n TF

BGA

MC

P372

11-2

0012

200

8-m

ux, D

iff46

8Se

rial D

DR L

VDS

or P

arall

el CM

OS

1.2,

1.8

71.3

90−4

0 to

+85

Decim

atio

n filt

ers,

noi

se-s

hapi

ng re

quan

tizer

124-

pin

VTLA

, 12

1-pi

n TF

BGA

MC

P37D

20-2

0014

200

134

8Se

rial D

DR L

VDS

or P

arall

el CM

OS

650

67.8

96−4

0 to

+85

Digi

tal d

own-

conv

erte

r, de

cimat

ion

filter

s12

4-pi

n VT

LA,

121-

pin

TFBG

A

MC

P372

20-2

0014

200

134

8Se

rial D

DR L

VDS

or P

arall

el CM

OS

650

67.8

96−4

0 to

+85

Decim

atio

n filt

ers,

noi

se-s

hapi

ng re

quan

izer

124-

pin

VTLA

, 12

1-pi

n TF

BGA

MC

P37D

21-2

0014

200

8-m

ux, D

iff49

0Se

rial D

DR L

VDS

or P

arall

el CM

OS

1.2,

1.8

74.2

90−4

0 to

+85

Decim

atio

n filt

ers,

dig

ital d

own-

conv

erte

r12

4-pi

n VT

LA,

121-

pin

TFBG

A

MC

P372

21-2

0014

200

8-m

ux, D

iff49

0Se

rial D

DR L

VDS

or P

arall

el CM

OS

1.2,

1.8

74.2

90−4

0 to

+85

Decim

atio

n filt

ers

124-

pin

VTLA

, 12

1-pi

n TF

BGA

MC

P37D

31-2

0016

200

8-m

ux, D

iff49

0Se

rial D

DR L

VDS

or P

arall

el CM

OS

500

7490

−40

to +

85De

cimat

ion

filter

s12

4-pi

n VT

LA,

121-

pin

TFBG

A

MC

P372

31-2

0016

200

8-m

ux, D

iff49

0Se

rial D

DR L

VDS

or P

arall

el CM

OS

500

7490

−40

to +

85Di

gita

l dow

n-co

ntve

rter,

decim

atio

n filt

ers

124-

pin

VTLA

, 12

1-pi

n TF

BGA

Inte

rfac

e: C

AN P

rodu

cts

Prod

uct

Des

crip

tion

and

Feat

ures

Ope

ratin

g

Volta

ge (V

)O

pera

ting

Tem

pera

ture

R

ange

(°C

)Pa

ckag

es

ATA6

560

CAN

Tran

sceiv

er w

ith s

tand

-by

and

silen

t mod

e, 5

V I/O

, CAN

FD

read

y, 5

Mbp

s, A

ECQ

100

Gra

de 1

4.5–

5.5

–40

to +

125

VDFN

8, S

OIC

8AT

A656

1CA

N Tr

ansc

eiver

with

sta

nd-b

y m

ode,

com

patib

le w

ith 3

.3V

and

5V m

icroc

ontro

ller,

CAN

FD re

ady,

5 M

bps,

AEC

Q10

0 G

rade

14.

5–5.

5–4

0 to

+12

5VD

FN8,

SO

IC8

ATA6

562

CAN

Tran

sceiv

er w

ith s

tand

-by

and

silen

t mod

e, 5

V I/O

, wak

e-up

pat

tern

, CAN

FD

read

y, 5

Mbp

s, A

ECQ

100

Gra

de 0

, 14.

5–5.

5–4

0 to

+12

5/15

0VD

FN8,

SO

IC8

ATA6

563

CAN

Tran

sceiv

er w

ith s

tand

-by

mod

e, c

ompa

tible

with

3.3

V an

d 5V

micr

ocon

trolle

r, w

ake-

up p

atte

rn, C

AN F

D re

ady,

5 M

bps,

AEC

Q10

0 G

rade

0, 1

4.5–

5.5

–40

to +

125/

150

VDFN

8, S

OIC

8AT

A656

4CA

N Tr

ansc

eiver

with

sile

nt m

ode,

com

patib

le w

ith 3

.3V

and

5V m

icroc

ontro

ller,

CAN

FD re

ady,

5 M

bps,

AEC

Q10

0 G

rade

0, 1

4.5–

5.5

–40

to +

125/

150

VDFN

8, S

OIC

8AT

A656

5Du

al CA

N Tr

ansc

eiver

with

sta

nd-b

y m

ode,

5V

I/O, w

ake

up p

atte

rn, C

AN F

D re

ady,

5 M

bps,

AEC

Q10

0 G

rade

0, 1

4.5–

5.5

–40

to +

125/

150

VDFN

14, S

O14

ATA6

566

CAN

Tran

sceiv

er w

ith s

tand

-by

mod

e, c

ompa

tible

with

3.3

V an

d 5V

micr

ocon

trolle

r, w

ake-

up p

atte

rn, C

AN F

D re

ady,

2 M

bps,

AEC

Q10

0 G

rade

0, 1

, suit

able

for t

he J

apan

ese

mar

ket

4.5–

5.5

–40

to +

125/

150

VDFN

8, S

OIC

8

ATA6

570

CAN

Parti

al Ne

twor

king

Tran

sceiv

er w

ith W

ake

pin

and

Wind

ow W

atch

dog,

com

patib

le w

ith 3

.3V

and

5V m

icroc

ontro

ller,

wak

e-up

pat

tern

or w

ake-

up fr

ame,

CAN

FD

read

y, 5

Mbp

s,

AECQ

100

Gra

de 1

4.55

–28

–40

to +

125

SOIC

14

MC

P251

5St

and-

Alon

e CA

N 2.

0B C

ontro

ller w

ith S

PI In

terfa

ce2.

7–5.

5–4

0 to

+12

518

-pin

PDI

P, 1

8-pi

n SO

IC,

20-p

in T

SSO

PM

CP2

517F

DEx

tern

al CA

N FD

Con

trolle

r with

SPI

Inte

rface

, ISO

118

98-1

:201

5 Co

mpl

iant,

32-b

it Ti

me

Stam

p, S

uppo

rts C

AN 2

.0B

and

CAN

FD, H

ighl

y Co

nfigu

rabl

e 31

FIF

Os

and

32 F

ilters

2.7–

5.5

–40

to +

150

14-p

in S

OIC

, 14-

pin

VDFN

MC

P256

25In

tegr

ated

Hig

h-Sp

eed

CAN

Tran

sceiv

er a

nd C

AN 2

.0B

Cont

rolle

r2.

7–5.

5–4

0 to

+12

528

-pin

SSO

P, 2

8-pi

n 6

× 6

QFN

Inte

rfac

e: L

IN P

rodu

cts

Prod

uct

Des

crip

tion

Vreg

Out

put

Volta

ge (V

)O

pera

ting

Tem

pera

ture

R

ange

(°C

)Vr

eg O

utpu

t C

urre

nt (m

A)Su

pply

Vol

tage

R

ange

(V)

Max

. Bau

d R

ate

LIN

Spe

cific

atio

n Su

ppor

ted

Pack

ages

ATA6

6321

1LI

N Tr

ansc

eiver

––4

0 to

+12

5–

5–28

20 k

Baud

2.0,

2.1

, 2.2

, 2.2

A, S

AEJ2

602-

2VD

FN8,

SO

IC8

ATA6

6320

1LD

O, p

in c

ompa

tible

with

ATA

6632

31 L

IN S

BC3.

3–4

0 to

+12

585

5–28

––

VDFN

8AT

A663

203

LDO

, pin

com

patib

le w

ith A

TA66

3254

LIN

SBC

5.0

–40

to +

125

855–

28–

–VD

FN8

ATA6

6323

1LI

N Tr

ansc

eiver

with

inte

grat

ed V

reg, p

inou

t acc

. to

OEM

har

dwar

e re

com

men

datio

n3.

3–4

0 to

+12

585

5–28

20 k

Baud

2.0,

2.1

, 2.2

, 2.2

A, S

AEJ2

602-

2VD

FN8

ATA6

6325

4LI

N Tr

ansc

eiver

with

inte

grat

ed V

reg, p

inou

t acc

. to

OEM

har

dwar

e re

com

men

datio

n5.

0–4

0 to

+12

585

5–28

20 k

Baud

2.0,

2.1

, 2.2

, 2.2

A, S

AEJ2

602-

2VD

FN8,

SO

IC8

ATA6

6323

2LI

N Tr

ansc

eiver

with

inte

grat

ed V

reg

and

Wak

e Pi

n, p

inout

acc

. to

OEM

har

dwar

e re

com

men

datio

n3.

3–4

0 to

+12

585

5–28

20 k

Baud

2.0,

2.1

, 2.2

, 2.2

A, S

AEJ2

602-

2VD

FN8

ATA6

6325

5LI

N Tr

ansc

eiver

with

inte

grat

ed V

reg

and

Wak

e Pi

n, p

inout

acc

. to

OEM

har

dwar

e re

com

men

datio

n5.

0–4

0 to

+12

585

5–28

20 k

Baud

2.0,

2.1

, 2.2

, 2.2

A, S

AEJ2

602-

2VD

FN8

ATA6

625

LIN

Tran

sceiv

er w

ith in

tegr

ated

Vre

g, c

lassic

pin

out

5.0

–40

to +

125

855–

2820

kBa

ud2.

0, 2

.1, 2

.2, 2

.2A,

SAE

J260

2-2

VDFN

8, S

OIC

8AT

A663

331

LIN

Tran

sceiv

er w

ith in

tegr

ated

Vre

g a

nd 2

relay

driv

er3.

3–4

0 to

+12

585

5–28

20 k

Baud

2.0,

2.1

, 2.2

, 2.2

A, S

AEJ2

602-

2VD

FN16

ATA6

6335

4LI

N Tr

ansc

eiver

with

inte

grat

ed V

reg a

nd 2

relay

driv

er5.

0–4

0 to

+12

585

5–28

20 k

Baud

2.0,

2.1

, 2.2

, 2.2

A, S

AEJ2

602-

2VD

FN16

ATA6

6343

1LI

N Tr

ansc

eiver

with

inte

grat

ed V

reg a

nd W

WDT

3.3

–40

to +

125

855–

2820

kBa

ud2.

0, 2

.1, 2

.2, 2

.2A,

SAE

J260

2-2

VDFN

16

Focus Product Selector Guide 31

Inte

rfac

e: L

IN P

rodu

cts

Prod

uct

Des

crip

tion

Vreg

Out

put

Volta

ge (V

)O

pera

ting

Tem

pera

ture

R

ange

(°C

)Vr

eg O

utpu

t C

urre

nt (m

A)Su

pply

Vol

tage

R

ange

(V)

Max

. Bau

d R

ate

LIN

Spe

cific

atio

n Su

ppor

ted

Pack

ages

ATA6

6345

4LI

N Tr

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with

inte

grat

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reg a

nd W

WDT

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125

855–

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SAE

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6 KB

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tex

M0+

MCU

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KB F

lash

mem

ory

3.3

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to +

8585

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20 k

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2.1

, 2.2

, 2.2

A, S

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602-

2Q

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cl. A

rm C

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x M

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4 KB

Flas

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0 to

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(SiP

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utio

n in

cl. A

rm C

orte

x M

0+ M

CU, 1

6 KB

Flas

h m

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3–4

0 to

+85

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2820

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0, 2

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J260

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n in

cl. A

rm C

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2 KB

Flas

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0 to

+85

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2820

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J260

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LIN

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n in

cl. A

rm C

orte

x M

0+ M

CU, 6

4 KB

Flas

h m

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0 to

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2820

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0, 2

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J260

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n in

cl. A

rm C

orte

x M

0+ M

CU, 1

6 KB

Flas

h m

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3–4

0 to

+10

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5–28

20 k

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2.1

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A0E1

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tex

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MCU

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KB F

lash

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to +

105

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0, 2

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J260

2-2

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32AT

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LIN

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n in

cl. A

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orte

x M

0+ M

CU, 6

4 KB

Flas

h m

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3–4

0 to

+10

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x M

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CU, 1

6 KB

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0 to

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585

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2Q

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CU, 3

2 KB

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cl. A

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4 KB

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0 to

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585

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ages

MD

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pin

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5–

0–12

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www.microchip.com32

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age

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pair

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IC, 8

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Feat

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Pack

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ATA6

826C

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7 to

40

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Fail

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Focus Product Selector Guide 33

Ultr

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Hig

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Ana

log

Mul

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Part

##

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601

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freq

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Die

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HV2

701

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Die

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605

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PST

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03

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freq

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FP, 4

2-Ba

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ped

Die

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HV2

705

16 S

PST

Yes

200V

2213

/10

33.

3V–5

V Lo

gic

inpu

t, 20

MHz

clo

ck fr

eque

ncy

48-L

ead

LQFP

, 42-

Ball B

umpe

d Di

e (B

D)

HV2

803

32 S

PST

No±6

V10

27/9

33.

3V In

put L

ogic,

66

MHz

Clo

ck F

requ

ency

132-

ball T

FBG

A 12

ⅹ 1

2 m

m

HV2

903

32 S

PST

Yes-

2±6

V10

27/9

33.

3V In

put L

ogic,

66

MHz

Clo

ck F

requ

ency

132-

ball T

FBG

A 12

ⅹ 1

2 m

m

HV2

904

32 S

PST

Yes-

1±6

V10

27/9

33.

3V In

put L

ogic,

66

MHz

Clo

ck F

requ

ency

132-

ball T

FBG

A 12

ⅹ 1

2 m

m

HV2

662

24 S

PST

No20

0V22

12/9

23.

3V–5

V Lo

gic

inpu

t, 20

MHz

clo

ck fr

eque

ncy

64-B

all V

FBG

A

HV2

762

24 S

PST

Yes

200V

2212

/92

3.3V

–5V

Logi

c in

put,

20 M

Hz c

lock

freq

uenc

y64

-Ball

VFB

GA

HV2

801

16 ×

2:1

Mux

No20

0V22

23/9

33.

3V–5

V Lo

gic

inpu

t, 20

MHz

clo

ck fr

eque

ncy

64-L

ead

QFN

HV2

901

16 ×

2:1

Mux

Yes

200V

2223

/93

3.3V

–5V

Logi

c in

put,

20 M

Hz c

lock

freq

uenc

y64

-Lea

d Q

FN

HV2

802

32 S

PST

No20

0V22

13/1

03

3.3V

–5V

Logi

c in

put,

20 M

Hz c

lock

freq

uenc

y9

× 9

VFBG

A

HV2

902

32 S

PST

Yes

200V

2213

/10

33.

3V–5

V Lo

gic

inpu

t, 20

MHz

clo

ck fr

eque

ncy

9 ×

9 VF

BGA

Osc

illat

ors:

Ultr

a-Lo

w J

itter

Prod

uct

Out

put F

requ

ency

(MH

z)O

utpu

t Log

icIn

put F

unct

ion

Freq

uenc

y St

abili

ty (p

pm)

Tem

pera

ture

Ran

ge (˚

C)

Supp

ly V

olta

ge (V

)Ph

ase

Noi

se (p

s R

MS)

Pack

age

MX5

710

to 8

60LV

CMO

S, L

VPEC

L, L

VDS,

HCS

LO

E on

Pin

1 or

OE

on p

in2

±50

–40

to 8

52.

375

to 3

.63

0.16

(12k

–20M

)7.

0 x

5.0

mm

6-p

inM

X55

10 to

860

LVCM

OS,

LVP

ECL,

LVD

S, H

CSL

OE

on P

in1

or O

E on

pin

3±5

0–4

0 to

85

2.37

5 to

3.6

30.

16 (1

2k–2

0M)

5.0

x 3.

2 m

m 6

-pin

MX5

74BB

D32

2M26

532

2.26

5625

HCSL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.14

3/0.

098

7.0

x 5.

0 m

m 6

-pin

MX5

55AN

R133

M33

313

3.33

33LV

PECL

OE

on p

in2

±50

–40

to 8

52.

375

to 3

.63

0.14

3/0.

092

5.0

x 3.

2 m

m 6

-pin

MX5

53BB

A156

M25

015

6.25

LVPE

CLO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

165/

0.11

5.0

x 3.

2 m

m 6

-pin

MX5

53BB

B156

M25

015

6.25

LVDS

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.16

2/0.

093

5.0

x 3.

2 m

m 6

-pin

MX5

73BB

A156

M25

015

6.25

LVPE

CLO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

165/

0.11

7.0

x 5.

0 m

m 6

-pin

MX5

53BB

A312

M50

031

2.5

LVPE

CLO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

155/

0.10

85.

0 x

3.2

mm

6-p

inM

X575

ABA2

5M00

0025

LVPE

CLO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

152/

0.08

87.

0 x

5.0

mm

6-p

inM

X573

LBB1

48M

500

148.

5LV

DSO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

149/

0.09

67.

0 x

5.0

mm

6-p

inM

X555

ABD

100M

000

100

HCSL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.22

/0.1

5.0

x 3.

2 m

m 6

-pin

MX5

73N

BA62

2M08

062

2.08

LVPE

CLO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

148/

0.10

37.

0 x

5.0

mm

6-p

inM

X573

BBB1

56M

250

156.

25LV

DSO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

162/

0.09

35.

0 x

3.2

mm

6-p

inM

X554

BBD

322M

265

322.

2656

25HC

SLO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

154/

0.1

5.0

x 3.

2 m

m 6

-pin

MX5

74BB

D32

2M26

532

2.26

5625

HCSL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.15

4/0.

17.

0 x

5.0

mm

6-p

inM

X573

BBA3

12M

500

312.

5LV

PECL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.14

8/0.

103

7.0

x 5.

0 m

m 6

-pin

MX5

73BB

B312

M50

031

2.5

LVDS

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.17

5/0.

087.

0 x

5.0

mm

6-p

inM

X555

ABA2

5M00

0025

LVPE

CLO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

152/

0.08

5.0

x 3.

2 m

m 6

-pin

MX5

75AB

B200

M00

020

0LV

DSO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

22/0

.17.

0 x

5.0

mm

6-p

inM

X555

ABB2

00M

000

200

LVDS

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.22

/0.1

5.0

x 3.

2 m

m 6

-pin

MX5

75AB

C20

0M00

020

0LV

CMO

SO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

128/

0.08

97.

0 x

5.0

mm

6-p

inM

X575

ABC

125M

000

125

LVCM

OS

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.12

8/0.

089

7.0

x 5.

0 m

m 6

-pin

MX5

53AB

B212

M50

021

2.5

LVDS

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.17

5/0.

085.

0 x

3.2

mm

6-p

inM

X573

ABA2

12M

500

212.

5LV

PECL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.17

5/0.

087.

0 x

5.0

mm

6-p

in

www.microchip.com34

Osc

illat

ors:

Ultr

a-Lo

w J

itter

Prod

uct

Out

put F

requ

ency

(MH

z)O

utpu

t Log

icIn

put F

unct

ion

Freq

uenc

y St

abili

ty (p

pm)

Tem

pera

ture

Ran

ge (˚

C)

Supp

ly V

olta

ge (V

)Ph

ase

Noi

se (p

s R

MS)

Pack

age

MX5

55AB

A150

M00

015

0LV

PECL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.14

3/0.

098

5.0

x 3.

2 m

m 6

-pin

MX5

75AB

D10

0M00

010

0HC

SLO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

22/0

.17.

0 x

5.0

mm

6-p

inM

X555

ABD

100M

000

100

HCSL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.22

/0.1

5.0

x 3.

2 m

m 6

-pin

MX5

75AB

A100

M00

010

0LV

PECL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.15

2, 0

.112

7.0

x 5.

0 m

m 6

-pin

MX5

55AB

C50

M00

0050

LVCM

OS

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.14

2, 0

.15.

0 x

3.2

mm

6-p

inM

X575

ABC

50M

0000

50LV

CMO

SO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

142,

0.1

7.0

x 5.

0 m

m 6

-pin

MX5

55AB

A50M

0000

50LV

PECL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.14

2, 0

.101

5.0

x 3.

2 m

m 6

-pin

MX5

75AB

A50M

0000

50LV

PECL

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.14

2, 0

.101

7.0

x 5.

0 m

m 6

-pin

MX5

55AB

C25

M00

0025

LVCM

OS

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.13

1, 0

.077

5.0

x 3.

2 m

m 6

-pin

MX5

75AB

C25

M00

0025

LVCM

OS

OE

on p

in1

±50

–40

to 8

52.

375

to 3

.63

0.13

1, 0

.077

7.0

x 5.

0 m

m 6

-pin

MX5

74BB

F644

M53

164

4.53

125

LVPE

CLO

E on

pin

1±5

0–4

0 to

85

2.37

5 to

3.6

30.

139,

0.1

017.

0 x

5.0

mm

6-p

in

Clo

ck a

nd D

ata

Dis

trib

utio

n: B

uffer

s

Product

Buffer Type

Fanout

Input MUX

Input Type

EEPROM

Termination

Output Type

Supply Voltage (V)

Output Frequency (Max) (MHz)

Host BUS

Output Data Rate (Max) (Gbps)

Propagation Delay (Max) (ps)

Within Device Skew (Max) (ps)

Output Enable

Runt Pulse Eliminator (RPE)

Fail-Safe Input (FSI)

Packages

PL12

3-02

NFa

nout

1:2

LVCM

OS

LVCM

OS

1.8/

2.5/

3.3

200

50

0

6/DF

NPL

123-

05Ze

ro D

elay

1:5

LVCM

OS

LVCM

OS

3.3

100/

134

250

8/SO

IC

PL12

3-09

Zero

Dela

y1:

9LV

CMO

SLV

CMO

S3.

310

0/13

425

016

/SO

IC 1

6/TS

SOP

PL12

3E-0

5Ze

ro D

elay

1:5

LVCM

OS

LVCM

OS

2.5/

3.3

220/

167/

200/

134

8/

SOIC

PL12

3E-0

9Ze

ro D

elay

1:9

LVCM

OS

LVCM

OS

2.5/

3.3

220/

167/

200/

134

16

/SO

ICPL

133-

21Fa

nout

1:2

LVCM

OS/

Sine

Wav

eLV

CMO

S1.

8/2.

5/3.

315

0

500

6/

UDFN

PL13

3-27

Fano

ut1:

2LV

CMO

S/Si

ne W

ave

LVCM

OS

1.8/

2.5/

3.3

150

50

0

6/UD

FNPL

133-

37Fa

nout

1:3

LVCM

OS/

Sine

Wav

eLV

CMO

S1.

8/2.

5/3.

315

0

250

6/

SOT-

23

PL13

3-47

Fano

ut1:

4LV

CMO

SLV

CMO

S2.

5/3.

315

092

0025

0

8/SO

IC

150m

ilPL

133-

67Fa

nout

1:6

LVCM

OS

LVCM

OS

2.5/

3.3

150

9200

250

16

/TSS

OP

PL13

3-97

Fano

ut1:

9LV

CMO

SLV

CMO

S2.

5/3.

315

092

0025

016

/QFN

PL13

3-97

Fano

ut1:

9LV

CMO

SLV

CMO

S1.

8/2.

5/3.

30.

1592

0025

0Ye

s

16

/VQ

FNPL

135-

27Fa

nout

1:2

Crys

tal O

scilla

tor

LVCM

OS

1.8/

2.5/

3.3

40

500

6/

UDFN

PL13

5-37

Fano

ut1:

3Cr

ysta

l Osc

illato

rLV

CMO

S1.

8/2.

5/3.

340

25

0

8/SO

IC

150m

ilPL

135-

47Fa

nout

1:4

Crys

tal

LVCM

OS

1.8/

2.5/

3.3

0.04

25

0Ye

s

16

/TSS

OP

PL13

5-67

Fano

ut1:

6Cr

ysta

lLV

CMO

S1.

8/2.

5/3.

30.

04

250

Yes

16/W

QFN

PL13

8-48

Fano

ut1:

42:

1LV

DS/L

VPEC

L/LV

HSTL

/SS

TL/H

CSL/

LVCM

OS

LVPE

CL2.

5/3.

380

089

037

16

/QFN

and

20

/TSS

OP

SY10

0E22

2LFa

nout

1:15

2:1

LVEC

L/LV

PECL

LVPE

CL3.

315

0015

2050

52/L

QFP

SY10

0EL1

1VFa

nout

1:2

ECL

ECL

3.3/

580

036

520

8/SO

ICSY

100E

L14V

Fano

ut1:

52:

1EC

L/PE

CLPE

CL3.

3/5

880

50Ye

s20

/SO

ICSY

100E

P111

UFa

nout

1:10

2:1

LVPE

CL/L

VECL

/HST

LPE

CL2.

5/3.

330

0040

025

32/T

QFP

SY10

0EP1

1UFa

nout

1:2

LVPE

CL/P

ECL/

ECL

PECL

2.5/

3.3/

53

300

208/

MSO

P 8/

SOIC

SY10

0EP1

4UFa

nout

1:5

2:1

PECL

, LVP

ECL,

ECL

, HST

LEC

L2.

5/3.

3/5

260

025

Yes

20/T

SSO

P

SY10

0EP1

5VFa

nout

1:4

2:1

PECL

, LVP

ECL,

ECL

, HST

LLV

PECL

2.5/

3.3/

52.

542

525

Yes

16/T

SSO

P 32

/TQ

FP

SY10

EP11

UFa

nout

1:2

LVPE

CL/P

ECL/

ECL

PECL

2.5/

3.3/

53

300

208/

MSO

P 8/

SOIC

SY54

020A

RFa

nout

1:4

ANY

CML

2.5

3.2

3.2

400

20Ye

s16

/MLF

SY56

011R

Fano

ut1:

2AN

YCM

L2.

54.

56.

428

015

16/ Q

FNSY

5602

0RFa

nout

1:4

ANY

CML

2.5

4.5

6.4

280

15Ye

s16

/ QFN

SY58

011U

Fano

ut1:

2AN

YCM

L2.

5/3.

37

10.7

250

1516

/QFN

Focus Product Selector Guide 35

Clo

ck a

nd D

ata

Dis

trib

utio

n: B

uffer

s

Product

Buffer Type

Fanout

Input MUX

Input Type

EEPROM

Termination

Output Type

Supply Voltage (V)

Output Frequency (Max) (MHz)

Host BUS

Output Data Rate (Max) (Gbps)

Propagation Delay (Max) (ps)

Within Device Skew (Max) (ps)

Output Enable

Runt Pulse Eliminator (RPE)

Fail-Safe Input (FSI)

Packages

SY58

012U

Fano

ut1:

2AN

YLV

PECL

2.5/

3.3

55

260

1516

/MLF

SY58

020U

Fano

ut1:

4AN

YCM

L2.

5/3.

36

250

1516

/QFN

SY58

021U

Fano

ut1:

4AN

YLV

PECL

2.5/

3.3

45

300

1516

/QFN

SY58

031U

Fano

ut1:

8AN

YCM

L2.

5/3.

35

270

2016

/QFN

SY58

032U

Fano

ut1:

8AN

YLV

PECL

2.5/

3.3

433

020

32/M

LFSY

5803

5UFa

nout

1:6

2:1

ANY

LVPE

CL2.

5/3.

34.

523

020

32/M

LFSY

5860

6UFa

nout

1:2

ANY

CML

2.5/

3.3

2.5

4.25

400

15Ye

s16

/QFN

SY58

607U

Fano

ut1:

2AN

YLV

PECL

2.5/

3.3

2.5

3.2

450

20Ye

s16

/QFN

SY58

608U

Fano

ut1:

2AN

YLV

DS2.

52

3.2

420

20Ye

s16

/QFN

SY75

572L

PCIe

Fan

out

1:2

2:1

HCSL

/LVD

SHC

SL3.

326

750

Yes

16/V

QFN

SY75

576L

PCIe

Fan

out

1:4

2:1

HCSL

/LVD

SHC

SL/L

VDS

3.3

267

50Ye

s20

/TSS

OP

SY89

112U

Fano

ut1:

122:

1AN

YLV

PECL

2.5/

3.3

355

025

44/Q

FN

SY89

311U

Fano

ut1:

2EC

L/PE

CL/L

VPEC

L/LV

ECL

ECL/

PECL

/LV

PECL

/LV

ECL

2.5/

3.3/

53

300

208/

MLF

SY89

467U

Fano

ut1:

202:

1AN

YLV

PECL

2.5/

3.3

1.5

1200

20Ye

s64

/TQ

FPSY

8946

8UFa

nout

1:20

2:1

ANY

LVDS

2.5

1.5

1200

25Ye

s64

/TQ

FPSY

8971

32L

Link

Rep

licat

or1:

22:

1LV

PECL

LVPE

CL3.

30.

81.

540

00

Yes

28/T

SSO

P

SY89

830U

Fano

ut1:

42:

1EC

L/PE

CL/L

VPEC

L/LV

ECL

ECL/

PECL

/LV

PECL

/LV

ECL

2.5/

3.3/

52.

545

025

16

/TSS

OP

SY89

831U

Fano

ut1:

4AN

YLV

PECL

2.5/

3.3

239

020

16

/VQ

FNSY

8983

2UFa

nout

1:4

ANY

LVDS

2.5

257

020

16

/VQ

FNSY

8983

3AL

Fano

ut1:

4AN

YLV

DS3.

32

600

20

16/V

QFN

SY89

833L

Fano

ut1:

4AN

YLV

DS3.

32

600

20

16/V

QFN

SY89

835U

Fano

ut1:

2LV

DSLV

DS2.

53.

22

500

20Ye

s8/

MLF

SY89

837U

Fano

ut1:

82:

1AN

YLV

PECL

2.5/

3.3

1.5

975

40

Yes

Yes

32/V

QFN

SY89

838U

Fano

ut1:

82:

1AN

YLV

DS2.

51.

595

040

Ye

sYe

s32

/VQ

FNSY

8984

6UFa

nout

1:5

2:1

ANY

LVPE

CL2.

5/3.

31.

590

020

Yes

32/V

QFN

SY89

847U

Fano

ut1:

52:

1AN

YLV

DS2.

51.

510

0020

Yes

32/V

QFN

SY89

8530

UFa

nout

1:16

LVDS

/LVP

ECL/

LVHS

TL/

SSTL

/HCS

LLV

PECL

3.3

0.5

2000

50

48/T

QFP

SY89

8535

XLFa

nout

1:4

2:1

XTAL

/LVC

MO

S/LV

TTL

LVPE

CL3.

30.

2417

5030

20

/TSS

OP

SY89

854U

Fano

ut1:

4AN

YLV

PECL

2.5/

3.3

3.5

340

20

16/V

QFN

ZL40

200

Fano

ut1:

21:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

PECL

2.5/

3.3

750

16/Q

FNZL

4020

1Fa

nout

1:2

1:1

LVPE

CL, L

VDS,

HCS

L, C

ML

Inte

rnal

LVPE

CL2.

5/3.

375

016

/QFN

ZL40

202

Fano

ut1:

41:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

PECL

2.5/

3.3

750

16/Q

FNZL

4020

3Fa

nout

1:4

1:1

LVPE

CL, L

VDS,

HCS

L, C

ML

Inte

rnal

LVPE

CL2.

5/3.

375

016

/QFN

ZL40

204

Fano

ut1:

61:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

PECL

2.5/

3.3

750

32/Q

FNZL

4020

5Fa

nout

1:6

1:1

LVPE

CL, L

VDS,

HCS

L, C

ML

Inte

rnal

LVPE

CL2.

5/3.

375

032

/QFN

ZL40

206

Fano

ut1:

81:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

PECL

2.5/

3.3

750

32/Q

FNZL

4020

7Fa

nout

1:8

1:1

LVPE

CL, L

VDS,

HCS

L, C

ML

Inte

rnal

LVPE

CL2.

5/3.

375

032

/QFN

ZL40

208

Fano

ut1:

62:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

PECL

2.5/

3.3

750

32/Q

FNZL

4020

9Fa

nout

1:6

2:1

LVPE

CL, L

VDS,

HCS

L, C

ML

Inte

rnal

LVPE

CL2.

5/3.

375

032

/QFN

www.microchip.com36

Clo

ck a

nd D

ata

Dis

trib

utio

n: B

uffer

s

Product

Buffer Type

Fanout

Input MUX

Input Type

EEPROM

Termination

Output Type

Supply Voltage (V)

Output Frequency (Max) (MHz)

Host BUS

Output Data Rate (Max) (Gbps)

Propagation Delay (Max) (ps)

Within Device Skew (Max) (ps)

Output Enable

Runt Pulse Eliminator (RPE)

Fail-Safe Input (FSI)

Packages

ZL40

210

Fano

ut1:

82:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

PECL

2.5/

3.3

750

32/Q

FNZL

4021

1Fa

nout

1:8

2:1

LVPE

CL, L

VDS,

HCS

L, C

ML

Inte

rnal

LVPE

CL2.

5/3.

375

032

/QFN

ZL40

212

Fano

ut1:

21:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

DS2.

5/3.

375

016

/QFN

ZL40

213

Fano

ut1:

21:

1LV

PECL

, LVD

S, H

CSL,

CM

LIn

tern

alLV

DS2.

5/3.

375

016

/QFN

ZL40

214

Fano

ut1:

41:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

DS2.

5/3.

375

016

/QFN

ZL40

215

Fano

ut1:

41:

1LV

PECL

, LVD

S, H

CSL,

CM

LIn

tern

alLV

DS2.

5/3.

375

016

/QFN

ZL40

216

Fano

ut1:

61:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

217

Fano

ut1:

61:

1LV

PECL

, LVD

S, H

CSL,

CM

LIn

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

218

Fano

ut1:

81:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

219

Fano

ut1:

81:

1LV

PECL

, LVD

S, H

CSL,

CM

LIn

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

220

Fano

ut1:

62:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

221

Fano

ut1:

62:

1LV

PECL

, LVD

S, H

CSL,

CM

LIn

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

222

Fano

ut1:

82:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

223

Fano

ut1:

82:

1LV

PECL

, LVD

S, H

CSL,

CM

LIn

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

224

Fano

ut1:

82:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

PECL

2.5/

3.3

750

32/Q

FNZL

4022

5Fa

nout

1:8

2:1

LVPE

CL, L

VDS,

HCS

L, C

ML

Inte

rnal

LVPE

CL2.

5/3.

375

032

/QFN

ZL40

226

Fano

ut1:

81:

1LV

PECL

, LVD

S, H

CSL,

CM

LEx

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

227

Fano

ut1:

81:

1LV

PECL

, LVD

S, H

CSL,

CM

LIn

tern

alLV

DS2.

5/3.

375

032

/QFN

ZL40

230

Fano

ut1:

102:

1LV

PECL

, HCS

L, L

VDS,

SS

TL, C

ML,

LVC

MO

SLV

PECL

, LV

DS, H

CSL

2.5/

3.3

1600

SPI

YES

48/q

fn

ZL40

231

Fano

ut1:

102:

1LV

PECL

, HCS

L, L

VDS,

SS

TL, C

ML,

LVC

MO

SLV

PECL

, LV

DS, H

CSL

2.5/

3.3

1600

48/q

fn

ZL40

234

Fano

ut1:

42:

1LV

PECL

, HCS

L, L

VDS,

SS

TL, C

ML,

LVC

MO

SLV

PECL

, LV

DS, H

CSL

2.5/

3.3

1600

32/q

fn

ZL40

235

Fano

ut1:

42:

1LV

PECL

, HCS

L, L

VDS,

SS

TL, C

ML,

LVC

MO

SLV

PECL

, LV

DS, H

CSL

2.5/

3.3

1600

SPI

YES

32/q

fn

ZL40

240

Fano

ut1:

102:

1LV

PECL

, HCS

L, L

VDS,

SS

TL, C

ML,

LVC

MO

SLV

CMO

S2.

5/3.

325

0SP

IYE

S32

/qfn

ZL40

241

Fano

ut1:

102:

1LV

PECL

, HCS

L, L

VDS,

SS

TL, C

ML,

LVC

MO

SLV

CMO

S2.

5/3.

325

032

/qfn

ZL40

260

Fano

ut1:

102:

1LV

PECL

, HCS

L, L

VDS,

SS

TL, C

ML,

LVC

MO

SLV

PECL

2.5/

3.3

1600

32/q

fn

ZL40

250

Prog

ram

mab

le Fa

nout

1:6

3:1

LVPE

CL, H

CSL,

LVD

S,

SSTL

, CM

L, L

VCM

OS

Exte

rnal

LVDS

, LV

PECL

, HC

SL,

CMO

S, H

STL

2.5/

3.3

1000

SPI/

I²CYE

S56

/QFN

ZL40

251

Prog

ram

mab

le Fa

nout

1:6

3:1

LVPE

CL, H

CSL,

LVD

S,

SSTL

, CM

L, L

VCM

OS

Inte

rnal

LVDS

, LV

PECL

, HC

SL,

CMO

S, H

STL

2.5/

3.3

1000

SPI/

I²CYE

S56

/QFN

ZL40

252

Prog

ram

mab

le Fa

nout

1:10

3:1

LVPE

CL, H

CSL,

LVD

S,

SSTL

, CM

L, L

VCM

OS

Exte

rnal

LVDS

, LV

PECL

, HC

SL,

CMO

S, H

STL

2.5/

3.3

1000

SPI/

I²CYE

S56

/QFN

ZL40

253

Prog

ram

mab

le Fa

nout

1:10

3:1

LVPE

CL, H

CSL,

LVD

S,

SSTL

, CM

L, L

VCM

OS

Inte

rnal

LVDS

, LV

PECL

, HC

SL,

CMO

S, H

STL

2.5/

3.3

1000

SPI/

I²CYE

S56

/QFN

ZL40

255

Prog

ram

mab

le Fa

nout

1:10

3:1

LVPE

CL, H

CSL,

LVD

S,

SSTL

, CM

L, L

VCM

OS

Inte

rnal

CML

2.5/

3.3

1000

SPI/

I²CYE

S32

/QFN

Focus Product Selector Guide 37

Clo

ck a

nd D

ata

Dis

trib

utio

n: B

uffer

s

Product

Buffer Type

Fanout

Input MUX

Input Type

EEPROM

Termination

Output Type

Supply Voltage (V)

Output Frequency (Max) (MHz)

Host BUS

Output Data Rate (Max) (Gbps)

Propagation Delay (Max) (ps)

Within Device Skew (Max) (ps)

Output Enable

Runt Pulse Eliminator (RPE)

Fail-Safe Input (FSI)

Packages

ZL40

292

DB20

00/P

CIe

Fano

ut1:

201:

1HC

SLLP

HCSL

3.3

250

YES

72/Q

FN

ZL40

293

PCIe

Fan

out

1:20

1:1

HCSL

LPHC

SL3.

325

0YE

S72

/QFN

ZL40

294

DB20

00/P

CIe

Fano

ut1:

201:

1HC

SLLP

HCSL

3.3

250

YES

80/G

QFN

ZL40

295

PCIe

Fan

out

1:20

1:1

HCSL

LPHC

SL3.

325

0YE

S80

/GQ

FN

ZL40

262

PCIe

Fan

out

1:1

1:2

HCSL

HCSL

400

YES

20/Q

FNZL

4026

4PC

Ie F

anou

t1:

11:

4HC

SLHC

SL40

0YE

S20

/QFN

Tim

ing

Prod

ucts

: Rea

l-Tim

e C

lock

/Cal

enda

r (RT

CC

)

Bus

Prod

uct

Pins

Tim

ing

Feat

ures

Mem

ory

Pow

er

Uni

que

Feat

ures

(2)

Pack

ages

Dig

ital T

rimm

ing

(Adj

./Ran

ge)

Alar

m

Setti

ngs

WD

TO

utpu

tsSR

AM

(Byt

es)

EEPR

OM

(K

Bits

)Pr

otec

ted

EEPR

OM

(bits

)M

in V

ccM

in V

bat

I²C

MC

P794

0M8

±127

ppm

1 se

c.–

IRQ

/CLK

640

01.

8–

–SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, TDF

N (M

NY),

PDIP

(P)

MC

P794

0N8

±127

ppm

1 se

c.–

IRQ

/CLK

640

01.

81.

3Po

wer

Fail

Tim

esta

mp

SOIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S), T

DFN

(MNY

), PD

IP (P

)

MC

P794

0x8

±127

ppm

1 se

c.–

IRQ

/CLK

640

641.

81.

3Po

wer

Fail

Tim

esta

mp

SOIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S), T

DFN

(MNY

)

MC

P794

1x8

±127

ppm

1 se

c.–

IRQ

/CLK

641

641.

81.

3Po

wer

Fail

Tim

esta

mp

SOIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S), T

DFN

(MNY

)

MC

P795

1x10

±255

ppm

0.01

sec

.–

IRQ

/CLK

641

128

1.8

1.3

Pow

er F

ail T

imes

tam

pSO

IC (S

L), T

SSO

P (S

T)

SPI

MC

P795

2x10

±255

ppm

0.01

sec

.–

IRQ

/CLK

642

128

1.8

1.3

Pow

er F

ail T

imes

tam

pM

SOP

(MS)

, TDF

N (M

N)

MC

P795

W1x

14±2

55 p

pm0.

01 s

ec.

YIR

Q/C

LK/W

DT R

ST64

112

81.

81.

3Po

wer

Fail

Tim

esta

mp,

Eve

nt D

etec

ts (×

2)

SOIC

(SL)

, TSS

OP

(ST)

MC

P795

W2x

14±2

55 p

pm0.

01 s

ec.

YIR

Q/C

LK/W

DT R

ST64

212

81.

81.

3Po

wer

Fail

Tim

esta

mp,

Eve

nt D

etec

ts (×

2)

SOIC

(SL)

, TSS

OP

(ST)

www.microchip.com38

Clo

ck a

nd D

ata

Dis

trib

utio

n: D

ivid

ers

Prod

uct

Div

ide

byM

UX:

Fan

out

Inpu

t Typ

eO

utpu

t Typ

eSu

pply

Vol

tage

(V)

Out

put F

requ

ency

(M

ax) (

GH

z)Pr

opag

atio

n D

elay

(M

ax) (

ps)

With

in D

evic

e Sk

ew (M

ax) (

ps)

Inte

rnal

Te

rmin

atio

nO

utpu

t Ena

ble

Fail-

Safe

Inpu

t (F

SI)

Pack

ages

SY89

872U

2, 4

, 8, 1

61:

2 A

NY L

VDS

2.5

V2

750

15Ye

sYe

s

16/

QFN

SY89

876L

1, 2

, 4, 8

, 16

1:2

ANY

LVD

S 3

.3V

287

015

Yes

16/

QFN

SY89

875U

1, 2

, 4, 8

, 16

1:2

ANY

LVD

S 2

.5V

287

015

Yes

Yes

1

6/Q

FN

SY89

871U

MG

2, 4

, 8, 1

61:

3 A

NYLV

PECL

2.5/

3.3

3.2

670

15Ye

sYe

s

16/

QFN

SY10

0EP3

2V2

1:1

ECL

ECL

5/3

.34

440

8/

MSO

P, 8

/SO

IC

SY10

0EL3

34

1:1

ECL

ECL

3.3

3.8

630

8

/SO

IC

SY89

874U

1, 2

, 4, 8

, 16

1:2

ANY

LVP

ECL

2.5

/3.3

V2.

579

015

Yes

Yes

1

6/Q

FN

SY89

873L

2, 4

, 8, 1

61:

2 A

NY L

VDS

3.3

V2

800

15Ye

sYe

s

16/

QFN

SY89

874A

U1,

2, 4

, 8, 1

61:

2 A

NY L

VPEC

L 2

.5/3

.3V

2.5

570

15Ye

sYe

s

16/

QFN

SY89

200U

1, 2

, 41:

3 A

NY L

VDS

2.5

1.5

900

25Ye

s

3

2/Q

FN

SY89

202U

1, 2

, 41:

8 A

NY L

VPEC

L 2

.5/3

.31.

593

025

Yes

Yes

3

2/VQ

FN

SY89

228U

3, 5

1:1

ANY

LVP

ECL

2.5

/3.3

V1

1500

Yes

Y

es16

/QFN

SY10

0S83

4L1,

2, 4

or 2

, 4, 8

1:1

ECL

/PEC

L E

CL/P

ECL

3.3

1200

50Ye

s

16/

SOIC

SY89

230U

3, 5

1:1

ANY

LVP

ECL

2.5

/3.3

V3.

285

0Ye

s

Yes

16/Q

FN

SY10

0EL3

2V2

1:1

LVPE

CLLV

PECL

3.3/

53

630

8/

SOIC

SY10

0EP3

3V4

1:1

ECL

ECL

5/3

.34

500

16/S

OIC

SY10

0EL3

42,

4, 8

1:3

ECL

/PEC

L E

CL/P

ECL

512

0050

Yes

1

6/SO

IC

SY10

0EL3

4L2,

4, 8

1:3

ECL

/PEC

L E

CL/P

ECL

3.3

1200

50Ye

s

16/

SOIC

SY89

218U

1, 2

, 42:

15 A

NY L

VDS

2.5

1.5

1600

35Ye

s

Yes

64/

TQFP

SY89

221U

1, 2

, 42:

15 A

NY L

VPEC

L 2

.5/3

.3V

1.5

1600

35Ye

s

Yes

64/

TQFP

SY89

231U

3, 5

1:1

ANY

LVD

S 2

.5V

3.2

810

Yes

Yes

16/

QFN

Clo

ck a

nd D

ata

Dis

trib

utio

n: D

river

s an

d R

ecei

vers

Prod

uct

Func

tion

Cha

nnel

sFe

atur

eIn

put T

ype

Out

put T

ype

Supp

ly V

olta

ge (V

)O

utpu

t Fre

quen

cy

(Max

) (G

Hz)

Out

put D

ata

Rat

e (M

ax) (

Gbp

s)Pr

opag

atio

n D

elay

(M

ax) (

ps)

Icc

(mA)

Fail

Safe

Inpu

t (F

SI)

Pack

ages

SY89

251V

Rece

iver

Sing

leO

utpu

t Ena

ble

ECL/

LVPE

CLEC

L/LV

PECL

3.3

/5V

380

268/

DFN

SY10

0EL1

6VRe

ceive

rSi

ngle

ECL/

PECL

ECL/

PECL

3.3

/5V

425

268M

SOP/

SOIC

SY58

600U

Drive

r/Rec

eiver

Sing

leIn

tern

al Te

rmin

atio

nAN

YCM

L 2

.5/3

.3V

10.7

722

065

8/M

LF

SY58

603U

Buffe

rSi

ngle

Fail-

Safe

Inpu

t (FS

I)AN

YCM

L 2

.5/3

.3V

4.25

2.5

350

50Ye

s8/

DFN

SY58

605U

Buffe

rSi

ngle

Fail-

Safe

Inpu

t (FS

I)AN

YLV

DS 2

.5V

3.2

242

050

Yes

8/DF

N

SY89

250V

Rece

iver

Sing

leO

utpu

t Ena

ble

LVEC

L/LV

PECL

PECL

3.3

/5V

0.8

380

468/

MLF

SY58

604U

Buffe

rSi

ngle

Fail-

Safe

Inpu

t (FS

I)AN

YLV

PECL

2.5

/3.3

V3.

22.

545

045

Yes

8/DF

N

SY54

016A

RDr

iver/R

eceiv

erSi

ngle

Inte

rnal

Term

inat

ion

ANY

CML

2.5

V3.

23.

228

016

8/M

LF

SY10

0EL1

7Re

ceive

rQ

uad

ECL/

LVPE

CLEC

L/LV

PECL

3.3

/5V

610

2620

/SO

IC

SY58

601U

Drive

r/Rec

eiver

Sing

leIn

tern

al Te

rmin

atio

nAN

YLV

PECL

2.5

/3.3

V5

522

060

8/M

LF

SY54

016R

Drive

r/Rec

eiver

Sing

leFa

il-Sa

fe In

put (

FSI)

ANY

CML

2.5

V2.

542

040

8/M

LF

SY58

016L

Drive

r/Rec

eiver

Sing

leIn

tern

al Te

rmin

atio

nCM

L/PE

CLCM

L 3

.3V

10.7

715

075

16/M

LF

SY58

602U

Drive

r/Rec

eiver

Sing

leIn

tern

al Te

rmin

atio

nAN

YLV

PECL

2.5

/3.3

10.7

722

065

8/Q

FN

SY56

016R

Drive

r/Rec

eiver

Sing

leIn

put E

quali

zatio

nAN

YCM

L 2

.5V

6.4

525

042

10/M

LF

Focus Product Selector Guide 39

Clo

ck a

nd D

ata

Dis

trib

utio

n: T

rans

lato

rs

Prod

uct

No.

of C

hann

els

Cor

e Su

pply

Vol

tage

(V)

Inpu

t Typ

eO

utpu

t Typ

eO

utpu

t Vol

tage

(V)

Out

put F

requ

ency

(M

ax) (

GH

z)Pr

opag

atio

n D

elay

(M

ax) (

ps)

With

in D

evic

e Sk

ew

(Max

) (ps

)Pa

ckag

es

SY89

321L

Sing

le3.

3LV

PECL

/CM

L/LV

DSLV

TTL

3.3

0.27

525

00

8/M

LFSY

100E

LT22

Dual

5TT

LPE

CL2.

5/3.

80.

1560

010

08/

SOIC

SY10

0EPT

21Si

ngle

3.3

LVPE

CLLV

TTL

3.3

0.27

525

0050

08/

MSO

P 8/

SOIC

SY10

0ELT

22L

Dual

3.3

LVTT

LLV

PECL

2.5/

3.9

0.15

600

100

8/SO

ICSY

100E

LT23

LDu

al3.

3LV

PECL

LVTT

L2

0.16

2500

300

8/SO

ICSY

5585

7LDu

al3.

3AN

YLV

PECL

3.3

2.5

400

5010

/MSO

PSY

8932

3LDu

al3.

3LV

PECL

LVTT

L3.

30.

275

250

508/

MLF

SY89

329V

Sing

le3.

3/8

LVTT

LLV

PECL

3.3/

70.

860

0

8/M

LFPL

130-

07Si

ngle

2.5/

3.4

Sine

Wav

e/ L

VCM

OS

LVCM

OS

2.5/

3.4

0.2

16/Q

FN, 8

/TSS

OP,

8/S

OIC

SY10

0EPT

22Du

al3.

3/6

TTL/

LVTT

L/CM

OS/

LVCM

OS

PECL

/LVP

ECL

3.3/

60.

860

050

08/

MSO

P 8/

SOIC

SY89

322V

Dual

3.3/

7LV

TTL

LVPE

CL3.

3/6

0.8

600

100

8/M

LFSY

10/1

00EP

T20

Sing

le3.

3/5

TTL/

LVTT

L/CM

OS/

LVCM

OS

PECL

/LVP

ECL

3.3/

50.

3560

050

08/

MSO

P 8/

SOIC

SY55

855V

Dual

3.3/

6PE

CL/L

VPEC

L/CM

LLV

DS3.

3/5

0.75

700

5010

/MSO

PSY

100E

LT23

Dual

5PE

CLTT

L2.

50.

1635

0030

08/

SOIC

SY10

0EPT

23Du

al3.

3LV

PECL

LVTT

L3.

30.

275

2500

300

8/M

SOP

8/SO

ICSY

8932

7LSi

ngle

3.3

ANY

LVPE

CL3.

32.

540

0

8/Q

FNSY

100E

LT21

LSi

ngle

3.3

LVPE

CLLV

TTL

2.5/

3.7

0.15

2500

8/

SOIC

SY10

0ELT

25Si

ngle

5EC

LTT

L5

0.5

3600

8/

SOIC

SY89

328L

Sing

le3.

3LV

PECL

/LVT

TLLV

TTL/

LVPE

CL3.

30.

275

600

8/

MLF

SY10

0EPT

28Si

ngle

3.3

LVPE

CL/L

VTTL

LVPE

CL/L

VTTL

3.3

0.27

525

00

8/M

SOP

8/SO

ICPL

130-

09Si

ngle

2.5/

3.6

Sine

Wav

e/TT

L/CM

OS/

LVDS

LVDS

2.5/

3.6

1

8/

SOP,

16/Q

FN

Clo

ck a

nd D

ata

Dis

trib

utio

n: M

ultip

lexe

rs

Prod

uct

MU

X:

Fano

utN

o. o

f Cha

nnel

sIn

put T

ype

Out

put T

ype

Supp

ly V

olta

ge (V

)O

utpu

t Fre

quen

cy

(Max

) (G

Hz)

Out

put D

ata

Rat

e (M

ax) (

Gbp

s)Pr

opag

atio

n D

elay

(Max

) (ps

)W

ithin

Dev

ice

Skew

(Max

) (ps

)C

ross

poin

tR

unt P

ulse

El

imin

ator

(RPE

)Fa

il-Sa

fe In

put

(FSI

)Pa

ckag

es

SY58

609U

2:1

Sing

le A

NY C

ML

2.5

/3.3

V3

4.25

450

20

Yes

16/

QFN

SY58

018U

2:1

Sing

le A

NY L

VPEC

L 2

.5/3

.3V

45

240

15

1

6/Q

FNSY

5861

1U2:

1Si

ngle

ANY

LVD

S 2

.5V

2.5

3.2

470

20

Yes

16/

QFN

SY89

474U

2:2

Sing

le A

NY L

VDS

2.5

V2.

52.

547

020

24/

QFN

SY10

0EP5

74:

1Si

ngle

PEC

L/EC

L P

ECL/

ECL

3.3

V/5V

3

520

20/

TSSO

PSY

8954

4U4:

1Si

ngle

ANY

LVD

S 2

.5V

43.

251

020

32/

MLF

SY89

840U

2:1

Sing

le A

NY L

VPEC

L 2

.5/3

.3V

2

880

Yes

Yes

16/

QFN

SY89

841U

2:1

Sing

le A

NY L

VDS

2.5

V2

87

0 Y

es Y

es16

/MLF

SY89

547L

4:2

Sing

le A

NY L

VDS

3.3

V4

3.2

540

20

32

/MLF

SY58

028U

4:2

Sing

le A

NY C

ML

2.5

/3.3

V7

10.7

340

20

32

/MLF

SY58

610U

2:1

Sing

le A

NY L

VPEC

L 2

.5/3

.3V

2.5

3.2

470

20

Yes

16/

QFN

SY58

017U

2:1

Sing

le A

NY C

ML

2.5

/3.3

V7

10.7

240

15

1

6/M

LFSY

5803

8U8:

2Si

ngle

ANY

LVP

ECL

2.5

/3.3

V5

4.5

500

15

4

4/Q

FNSY

100E

P56

2:1

Dual

PEC

L/EC

L P

ECL/

ECL

3.3

V/5V

3

470

100

20/

TSSO

PSY

8985

3U2:

1Du

al A

NY L

VPEC

L 2

.5/3

.3V

2.5

2.5

360

20

3

2/Q

FNSY

8954

5L4:

1Si

ngle

ANY

LVD

S 3

.3V

33.

260

025

32/

MLF

SY56

034A

R2:

6Si

ngle

ANY

CM

L 2

.5V

56.

430

025

Yes

32/

QFN

SY89

859U

8:2

Sing

le A

NY L

VPEC

L 2

.5/3

.3V

2.5

3.5

640

20

4

4/Q

FNSY

8954

3L2:

1Du

al A

NY L

VDS

3.3

V3

3.2

510

25

3

2/M

LFSY

5802

9U4:

2Si

ngle

ANY

LVP

ECL

2.5

/3.3

V4

539

015

32/M

LFSY

8985

5U4:

2Si

ngle

ANY

LVP

ECL

2.5

/3.3

V2.

52.

541

020

32/

QFN

SY89

465U

2:1

Sing

le A

NY L

VDS

2.5

V2

12

0025

Yes

Yes

44/

QFN

SY89

844U

2:2

Sing

leAN

YLV

DS 2

.5V

287

020

Yes

Yes

24/

QFN

SY58

026U

2:1

Dual

ANY

LVP

ECL

2.5

/3.3

V6

531

015

32/M

LF

www.microchip.com40

Clo

ck a

nd D

ata

Dis

trib

utio

n: M

ultip

lexe

rs

Prod

uct

MU

X:

Fano

utN

o. o

f Cha

nnel

sIn

put T

ype

Out

put T

ype

Supp

ly V

olta

ge (V

)O

utpu

t Fre

quen

cy

(Max

) (G

Hz)

Out

put D

ata

Rat

e (M

ax) (

Gbp

s)Pr

opag

atio

n D

elay

(Max

) (ps

)W

ithin

Dev

ice

Skew

(Max

) (ps

)C

ross

poin

tR

unt P

ulse

El

imin

ator

(RPE

)Fa

il-Sa

fe In

put

(FSI

)Pa

ckag

es

SY58

019U

2:1

Sing

le A

NYLV

PECL

2.5

/3.3

V7

10.7

240

15

16

/MLF

SY58

025U

2:1

Dual

ANY

CM

L 2

.5/3

.3V

610

.729

015

32/M

LFSY

5803

0U4:

2Si

ngle

ANY

LVPE

CL 2

.5/3

.3V

710

.734

020

32/M

LF

Clo

ck a

nd D

ata

Dis

trib

utio

n: S

kew

Man

agem

ent

Prod

uct

No.

of

Cha

nnel

sIn

put T

ype

Out

put T

ype

Prop

agat

ion

Del

ay

Res

olut

ion

(Typ

) (ps

/ste

p)Pr

opag

atio

n D

elay

(M

in) (

ns)

Prop

agat

ion

Del

ay

(Max

)(ns)

Fine

Tun

eSu

pply

Vol

tage

(V)

Out

put F

requ

ency

(M

ax) (

GH

z)Pa

ckag

es

SY10

0EP1

95V

Sing

leAN

YEC

L10

2.2

12.2

3.3

/52.

532

/TQ

FPSY

100E

P196

VSi

ngle

ANY

ECL

102.

212

.2Ye

s 3

.3/5

2.5

32/T

QFP

SY55

856U

Dual

CML

CML

500.

350.

72.

5/3.

32.

532

/TQ

FPSY

8929

5USi

ngle

LVPE

CL/L

VTTL

LVPE

CL10

3.2

14.8

2.5/

3.3

1.5

32/T

QFP

32/

VQFN

SY89

296U

Sing

leLV

PECL

/LVT

TLLV

PECL

103.

214

.8Ye

s2.

5/3.

31.

532

/TQ

FP 3

2/VQ

FNSY

8929

7UDu

alAN

YCM

L5

27

3.3

1.6

24/V

QFN

Clo

ck a

nd D

ata

Dis

trib

utio

n: H

igh

Tem

pera

ture

Osc

illat

ors

Part

Fam

ilyTy

peFo

otpr

int (

mm

)O

utpu

t Fre

quen

cy (M

Hz)

Tem

pera

ture

Sta

bilit

y (p

pm)

Tem

pera

ture

Ran

ge (o C

)O

utpu

t Log

icSu

pply

Vol

tage

(V)

HM

-420

1-RT

CM

1Re

al tim

e clo

ck m

odul

e13

x 1

30.

0005

1215

0–4

0 to

200

CMO

S3.

3H

T-RT

C-X

ORe

al tim

e clo

ck X

Om

ultip

le op

tions

, see

spe

cifica

tion

0.03

2768

100

–55

to 2

00CM

OS

1.8,

2.5

, 3.3

, 5H

X-17

1Hi

gh te

mp

OCX

O28

x 3

810

to 2

00.

005

–40

to 1

50CM

OS

5PX

-420

High

tem

p XO

13 x

13

0.5

to 4

020

0–5

5 to

230

CMO

S3.

3, 5

PX-5

70Hi

gh te

mp

XO8.

5 x

80.

5 to

40

200

–55

to 2

30CM

OS

1.8,

2.5

, 3, 3

.3, 5

PX-6

10Hi

gh te

mp

XOØ

9.65

0.03

2768

to 4

020

0–5

5 to

230

CMO

S1.

8, 2

.5, 3

.3, 5

PX-7

02Hi

gh te

mp

XO7

x 5

0.5

to 5

020

0–5

5 to

230

CMO

S1.

8, 2

.5, 3

, 3.3

, 5VX

-400

High

tem

p VC

XO20

x 1

31

to 3

2.76

8–5

5 to

200

CMO

S3.

3, 5

VX-7

08Hi

gh te

mp

VCXO

7 x

52

to 4

0–5

5 to

180

CMO

S3.

3

Clo

ck a

nd D

ata

Dis

trib

utio

n: D

isci

plin

ed O

scill

ator

Mod

ule

Part

Fam

ilyTy

peFo

otpr

int (

mm

)O

utpu

t Sta

ndar

d (M

Hz)

Tem

pera

ture

Sta

bilit

y (p

pb)

Tem

pera

ture

Ran

ge

Min

(o C)

Hol

dove

r 24

hour

s -

cons

tant

tem

pera

ture

us

1pps

RM

S (1

sig

ma)

ac

cura

cy to

UTC

ns

Phas

e N

oise

10

Hz

dBc/

Hz

Phas

e N

oise

10

0 kH

z dB

c/H

z

MD

-013

High

Sta

bility

GNS

SDO

CXO

115

x 60

190.

4–4

0 to

85

1.5

10–1

25-1

45M

D-1

74Lo

w n

oise

GNS

SDO

CXO

50 x

40

105

–40

to 8

515

20–1

35-1

70M

D-1

75Hi

gh S

tabi

lity G

NSSD

OCX

O50

x 4

010

0.4

–40

to 8

51.

510

–125

-145

MD

-261

0-O

CXO

Com

pact

GNS

SDO

CXO

25 x

20

105

–40

to 8

58

20–1

20-1

50

OC

XO

Part

Fam

ilyTy

peFo

otpr

int (

mm

)O

utpu

t Fre

quen

cy

(MH

z)Te

mpe

ratu

re

Stab

ility

(ppb

)Te

mpe

ratu

re

Ran

ge (o C

)Ag

ing

Per Y

ear (

ppb)

Phas

e N

oise

10

Hz

dBc/

Hz

Phas

e N

oise

10

kH

z dB

c/H

zC

arrie

r (M

Hz)

Supp

ly V

olta

ge (V

)

EX-2

19Lo

w P

ower

Spa

ce O

CXO

26 x

24

10 to

120

100

–40

to +

8520

0–9

0–1

4510

3.3,

5EX

-421

Low

pow

er O

CXO

13 x

13

10 to

100

30–4

0 to

+85

100

–125

–165

103.

3, 5

MX-

503

Micr

opro

cess

or c

orre

cted

TCX

O14

x 9

8 to

50

30–4

0 to

+85

250

–93

–154

203.

3, 5

MX-

600

Micr

opro

cess

or c

orre

cted

TCX

O9

x 7

8 to

40

30–4

0 to

+85

250

–100

–153

103.

3O

X-04

3Lo

w g

OCX

O51

x 5

18

to 1

530

–40

to +

8540

–135

–170

1012

, 15

OX-

046

Low

g O

CXO

51 x

51

50 to

250

200

–40

to +

8520

0–1

00–1

7510

012

, 15

OX-

171

High

sta

bility

OCX

O38

x 2

85

to 2

00.

8–4

0 to

+85

15–1

25–1

4510

3.3,

5, 1

2O

X-20

8Hi

gh S

tabi

lity O

CXO

25 x

25

5 to

20

0.8

–40

to +

8520

–125

–155

103.

3, 5

OX-

221

High

Sta

bility

OCX

O25

x 2

210

to 3

0.72

3–4

0 to

+85

60–1

22–1

5110

3.3

OX-

228

High

sta

bility

OCX

O25

x 2

210

to 2

01

–40

to +

8520

03.

3O

X-24

9Sp

ace

OCX

O35

x 2

010

to 1

2010

0–4

0 to

+85

200

–108

–162

505

Focus Product Selector Guide 41

OC

XO

Part

Fam

ilyTy

peFo

otpr

int (

mm

)O

utpu

t Fre

quen

cy

(MH

z)Te

mpe

ratu

re

Stab

ility

(ppb

)Te

mpe

ratu

re

Ran

ge (o C

)Ag

ing

Per Y

ear (

ppb)

Phas

e N

oise

10

Hz

dBc/

Hz

Phas

e N

oise

10

kH

z dB

c/H

zC

arrie

r (M

Hz)

Supp

ly V

olta

ge (V

)

OX-

304

Low

noi

se O

CXO

20 x

20

10 to

20

20–4

0 to

+85

30–1

35–1

7310

12O

X-30

5Lo

w n

oise

OCX

O20

x 2

080

to 1

2020

0–4

0 to

+85

200

–105

–178

100

12O

X-40

115

88 O

CXO

20 x

13

10 to

40

25–4

0 to

+85

100

–121

–152

203.

3, 5

OX-

405

Low

noi

se O

CXO

20 x

13

80 to

120

50–4

0 to

+85

300

–95

–155

100

3.3,

5O

X-50

2St

anda

rd O

CXO

14 x

910

to 4

010

–40

to +

8550

0–9

0–1

5020

3.3

OX-

601

Stan

dard

OCX

O9

x 7

10 to

40

10–4

0 to

+85

500

–90

–150

203.

3

TCXO

Part

Fam

ilyTy

peFo

otpr

int (

mm

)O

utpu

t Fre

quen

cy

(MH

z)Te

mpe

ratu

re S

tabi

lity

–40

to 8

5 pp

mPh

ase

Noi

se

10 H

z dB

c/H

zPh

ase

Noi

se

10 k

Hz

dBc/

Hz

Car

rier (

MH

z)O

utpu

t Log

icSu

pply

Vol

tage

(V)

DO

C20

0103

Spac

e TC

XOm

ultip

le op

tions

, see

spe

cifica

tion

0.3

to 4

252

CMO

S, S

ine

3.3,

5, 1

2D

OC

2071

39Sp

ace

TCXO

35 x

25

12 to

200

2LV

DS3.

3TX

-321

Low

noi

se T

CXO

23 x

18

5 to

50

1–1

16–1

6210

CMO

S3.

3, 5

TX-7

07Lo

w g

TCX

O7

x 5

8 to

52

1–1

00–1

5810

CMO

S, C

lippe

d Si

ne3.

3, 5

TX-7

08Lo

w g

TCX

O7

x 5

96 to

160

1–7

5–1

4015

0CM

OS

3.3

VT-7

06St

ratu

m 3

TCX

O7

x 5

5 to

52

0.2

–102

–154

10CM

OS

3, 3

.3, 5

VT-8

03St

ratu

m 3

TCX

O5

x 3.

210

to 5

20.

28–9

1–1

5026

CMO

S, C

lippe

d Si

ne2.

5, 3

.3, 5

VT-8

20St

anda

rd T

CXO

3.2

x 2.

58

to 4

50.

5–9

1–1

4910

Clip

ped

Sine

1.8,

2.5

, 3, 3

.3VT

-841

Stan

dard

TCX

O2.

5 x

210

to 5

21

–91

–148

19.2

Clip

ped

Sine

1.8,

2.5

, 3.3

VT-8

60St

anda

rd T

CXO

2 x

1.6

13 to

52

0.5

–90

–145

26Cl

ippe

d Si

ne1.

8, 2

.5, 3

, 3.3

VCSO

and

PSO

Part

Fam

ilyTy

peFo

otpr

int (

mm

)O

utpu

t Fre

quen

cy (M

Hz)

Tem

pera

ture

Ran

ge (o C

)Ji

tter 1

2k-2

0 M

Hz

fs–r

ms

Car

rier (

MH

z)O

utpu

t Log

ic

DO

C20

6559

Spac

e VC

SO16

x 1

630

0 to

150

0–4

0 to

+85

1000

Sine

DO

C20

6906

Spac

e VC

SO16

x 1

630

0 to

100

0–4

0 to

+85

0.5

1000

LVPE

CLVS

-501

Sing

le fre

quen

cy V

CSO

14 x

960

0 to

300

0–1

0 to

+85

1217

00Si

ne, B

alanc

ed o

r Diffe

rent

ial S

inew

ave,

LVP

ECL

VS-5

04Du

al fre

quen

cy V

CSO

14 x

960

0 to

300

0–1

0 to

+85

1219

80Si

ne, B

alanc

ed o

r Diffe

rent

ial S

inew

ave,

LVP

ECL

VS-5

07Si

ngle

frequ

ency

VCS

O14

x 9

3000

to 6

000

–40

to +

8510

5898

.24

Sine

, Bala

nced

or D

iffere

ntial

Sin

ewav

eVS

-702

Sing

le fre

quen

cy V

CSO

7 x

515

0 to

100

0–4

0 to

+85

100

622.

08LV

PECL

, LVD

SVS

-709

Dual

frequ

ency

VCS

O7

x 5

120

to 1

200

–40

to +

8512

069

8.81

LVPE

CL, L

VDS

VS-8

00Si

ngle

frequ

ency

VCS

O5

x 3.

280

0 to

320

0–4

0 to

+85

629

49.1

2Si

ne, B

alanc

ed o

r Diffe

rent

ial S

inew

ave

VCXO

Part

Fam

ilyTy

peFo

otpr

int (

mm

)O

utpu

t Fre

quen

cy

(MH

z)Te

mpe

ratu

re

Ran

ge (o C

)Pu

ll R

ange

(ppm

)Ph

ase

Noi

se

10 H

z dB

c/H

zPh

ase

Noi

se

100

kHz

dBc/

Hz

Car

rier (

MH

z)O

utpu

t Log

icSu

pply

Vo

ltage

(V)

VX-5

01Lo

w n

oise

VCX

O14

x 9

10 to

120

0–4

0 to

+85

65–7

6–1

6610

0CM

OS,

Sin

e, L

VPEC

L, L

VDS

3.3,

5

VX-7

06Lo

w n

oise

VCX

O7

x 5

40 to

300

–40

to +

8560

–72

–166

122.

88CM

OS,

LVP

ECL

3.3,

5

VX-8

05Lo

w n

oise

VCX

O5

x 3.

210

0 to

204

.8–4

0 to

+10

550

–68

–157

122.

88LV

PECL

3.3

VX-5

05M

il tem

p ra

nge

VCXO

14 x

920

to 8

00–5

5 to

+12

560

–76

–161

100

CMO

S, L

VPEC

L3.

3, 5

DO

C20

4898

Spac

e VC

XO25

x 2

5 10

0 to

700

–40

to +

8520

700

LVPE

CL3.

3

DO

C20

4899

Spac

e VC

XO25

x 2

5 80

to 2

00–4

0 to

+85

2020

0LV

DS3.

3

DO

C20

6218

Spac

e VC

XO14

x 9

1 to

100

–40

to +

8550

–85

–159

16CM

OS

3.3,

5

VV-8

00St

anda

rd V

CXO

5 x

3.2

1.54

4 to

77.

76–4

0 to

+85

150

–63

–157

61.4

4CM

OS

3.3,

5

VX-7

05St

anda

rd V

CXO

7 x

577

.76

to 1

70–4

0 to

+85

50–6

6–1

5112

2.88

CMO

S, L

VPEC

L3.

3

www.microchip.com42

XO

Part

Fam

ilyTy

peFo

otpr

int (

mm

)O

utpu

t Fre

quen

cy

(MH

z)Te

mpe

ratu

re

Stab

ility

(ppm

)Te

mpe

ratu

re R

ange

M

in (o C

)Ji

tter 1

2k-2

0 M

Hz

fs

–rm

sC

arrie

r (M

Hz)

Out

put L

ogic

Supp

ly V

olta

ge (V

)

DO

C20

3679

Spac

e XO

16 x

16

12 to

200

50–5

5 to

+12

50.

0920

0LV

DS3.

3D

OC

2038

10Sp

ace

XOm

ultip

le op

tions

, see

spe

cifica

tion

100

to 7

0050

–55

to +

125

0.3

700

LVPE

CL3.

3D

OC

2049

00Sp

ace

XOm

ultip

le op

tions

, see

spe

cifica

tion

12 to

160

50–5

5 to

+12

50.

1410

0CM

OS

2.5,

3.3

DO

C20

6379

Spac

e XO

, 300

k ra

d16

x 1

612

to 1

0050

–55

to +

125

0.08

100

CMO

S3.

3, 5

DO

C20

6903

Spac

e XO

, 300

kra

d16

x 1

612

to 2

0050

–55

to +

125

0.09

200

LVDS

3.3

M55

310/

28B

Mil t

emp

rang

e XO

14 x

91

to 8

550

–55

to +

125

TTL

3.3

M55

310/

30B

Mil t

emp

rang

e XO

14 x

90.

45 to

85

50–5

5 to

+12

5CM

OS

3.3

OS-

6833

8Sp

ace

XOm

ultip

le op

tions

, see

spe

cifica

tion

0.35

to 1

0050

–55

to +

125

0.16

40CM

OS,

TTL

3.3,

5PS

-702

High

freq

uenc

y SO

7 x

515

0 to

100

050

–40

to +

8510

062

2.08

LVPE

CL, L

VDS

3.3

PX-7

00Pr

ecisi

on X

O7

x 5

1 to

800

50–5

5 to

+12

550

010

0CM

OS,

TTL

, LVP

ECL,

LVD

S2.

5, 3

.3, 5

PX-7

06St

anda

rd X

O7

x 5

40 to

300

25–4

0 to

+85

4810

0CM

OS,

LVP

ECL

3.3,

5VC

-711

Low

jitte

r XO

7 x

510

to 1

7010

0–4

0 to

+10

510

015

6.25

LVPE

CL, L

VDS

2.5,

3.3

VC-8

01St

anda

rd X

O5

x 3.

20.

0327

7 to

125

50–5

5 to

+12

550

012

5CM

OS

1.8,

2.5

, 3.3

, 5VC

-806

Stan

dard

XO

5 x

3.2

25 to

250

25–4

0 to

+85

300

155.

52LV

PECL

, LVD

S2.

5, 3

.3VC

-820

Stan

dard

XO

3.2

x 2.

50.

625

to 1

3350

–55

to +

125

6112

5CM

OS

1.8,

2.5

, 3.3

VC-8

27Lo

w jit

ter X

O3.

2 x

2.5

20 to

170

100

–40

to +

105

130

156.

25LV

PECL

, LVD

S2.

5, 3

.3VC

-840

Stan

dard

XO

2.5

x 2

0.75

to 6

025

–40

to +

105

177

25CM

OS

1.8,

2.5

, 3.3

Low

-Pow

er O

scill

ator

s

Prod

uct

Out

put F

requ

ency

M

in. (

MH

z)O

utpu

t Fre

quen

cy

Max

(MH

z)O

utpu

t Log

icFr

eque

ncy

Stab

ility

(p

pm)

Tem

p. R

ange

(°

C)

Supp

ly V

olta

ge (V

)C

urre

nt (T

yp) (

mA)

Pe

riod

Jitte

r (p

s R

MS)

# O

utpu

tsD

imen

sion

sO

utpu

t Driv

e

Stre

ngth

(pf)

DSC

60X1

B0.

002

80LV

CMO

S±2

0, ±

25, ±

50– 4

0 to

+12

51.

71–3

.63

1.3

101

1.6

x 1.

2 m

m 4

-pin

2.

0 x

1.6

mm

4-p

in

2.5

x 2.

0 m

m 4

-pin

3.

2 x

2.5

mm

4-p

in*

5.0

x 3.

2 m

m 4

pin

* 7.

0 x

5.0

mm

4-p

in*

15D

SC60

X3B

0.00

280

LVCM

OS

±20,

±25

, ±51

– 40

to +

125

1.71

–3.6

31.

310

15

DSC

61X1

B0.

002

100

LVCM

OS

±20,

±25

, ±56

– 40

to +

125

1.71

–3.6

33.

07.

01

15

DSC

61X2

B0.

002

100

LVCM

OS

±20,

±25

, ±57

– 40

to +

125

1.71

–3.6

33.

07.

01

25

DSC

1001

117

0LV

CMO

S±1

0, ±

25, ±

50– 4

0 to

+10

51.

62–3

.63

5.0

6.0

12.

5 x

2.0

mm

4-p

in

3.2

x 2.

5 m

m 4

-pin

5.

0 x

3.2

mm

4-p

in

7.0

x 5.

0 m

m 4

-pin

15D

SC10

031

170

LVCM

OS

±10,

±25

, ±50

– 40

to +

105

1.62

–3.6

36.

05.

01

25

DSC

1004

117

0LV

CMO

S±1

0, ±

25, ±

50– 4

0 to

+10

51.

62–3

.63

7.0

5.0

140

Low

-Jitt

er O

scill

ator

s

Prod

uct

Out

put F

requ

ency

M

in. (

MH

z)O

utpu

t Fre

quen

cy

Max

(MH

z)O

utpu

t Log

icFr

eque

ncy

St

abili

ty (p

pm)

Tem

pera

ture

R

ange

(°C

)Su

pply

Vo

ltage

(V)

Cur

rent

(T

yp) (

mA)

Pe

riod

Jitte

r (p

s R

MS)

Phas

e N

oise

(ps

RM

S)

(12k

–20

MH

z)#

Out

puts

Dim

ensi

ons

Out

put D

rive

Stre

ngth

(pf)

MX5

710

860

LVCM

OS,

LVP

ECL,

LVD

S, H

CSL

±20,

±50

–40

to +

852.

375–

3.63

700.

161

7.0

x 5.

0 m

m 6

-pin

MX5

510

860

LVCM

OS,

LVP

ECL,

LVD

S, H

CSL

±20,

±50

–40

to +

852.

375–

3.63

700.

161

5.0

x 3.

2 m

m 6

-pin

DSC

11x1

2.3

170

LVCM

OS

±10,

±25

, ±50

–55

to +

125

2.25

–3.6

325

31.

70/0

.3 (2

00k–

20M

)1

2.5

x 2.

0 m

m 6

-pin

3.

2 x

2.5

mm

6-p

in

5.0

x 3.

2 m

m 6

-pin

7.

0 x

5.0

mm

6-p

in

15D

SC11

x22.

346

0LV

PECL

±10,

±25

, ±50

–40

to +

105

2.25

–3.6

351

2.5

1.70

/0.3

(200

k–20

M)

1D

SC11

x32.

346

0LV

DS±1

0, ±

25, ±

50–4

0 to

+10

52.

25–3

.63

292.

51.

70/0

.3 (2

00k–

20M

)1

DSC

11x4

2.3

460

HCSL

±10,

±25

, ±50

–40

to +

105

2.25

–3.6

330

2.5

1.70

/0.3

(200

k–20

M)

1D

SC12

x12.

517

0LV

CMO

S±2

0, ±

25, ±

55–4

0 to

+12

52.

25–3

.63

270.

651

15D

SC12

x22.

545

0LV

PECL

±20,

±25

, ±55

–40

to +

105

2.25

–3.6

350

0.65

1D

SC12

x32.

545

0LV

DS±2

0, ±

25, ±

55–4

0 to

+12

52.

25–3

.63

320.

651

DSC

12x4

2.5

450

HCSL

±20,

±25

, ±55

–40

to +

105

2.25

–3.6

340

0.65

1D

SC2x

102.

317

0LV

CMO

S±1

0, ±

25, ±

50–5

5 to

+12

52.

25–3

.63

253

1.70

/0.3

(200

k–20

M)

1

3.2

x 2.

5 m

m 1

4-pi

n

15D

SC2x

202.

346

0LV

PECL

±10,

±25

, ±50

–40

to +

105

2.25

–3.6

351

2.5

1.70

–0.3

(200

k–20

M)

1D

SC2x

302.

346

0LV

DS±1

0, ±

25, ±

50–4

0 to

+10

52.

25–3

.63

292.

51.

70/0

.3 (2

00k–

20M

)1

DSC

2x40

2.3

460

HCSL

±10,

±25

, ±50

–40

to +

105

2.25

–3.6

330

2.5

1.70

/0.3

(200

k–20

M)

1

Focus Product Selector Guide 43

Spre

ad S

pect

rum

Osc

illat

ors

Prod

uct

Out

put F

requ

ency

M

in. (

MH

z)O

utpu

t Fre

quen

cy

Max

(MH

z)O

utpu

t Log

icFr

eque

ncy

Stab

ility

(p

pm)

Tem

p. R

ange

(°C

)Su

pply

Vol

tage

(V)

Cur

rent

(Typ

) (m

A)

Perio

d Ji

tter

(ps

RM

S)#

Out

puts

Dim

ensi

ons

Out

put D

rive

Stre

ngth

(pf)

DSC

6x1B

110

0LV

CMO

S±2

0, ±

25, ±

50 –

40 to

+12

51.

71–3

.63

37

11.

6 x

1.2

mm

4-p

in

2.0

x 1.

6 m

m 4

-pin

2.

5 x

2.0

mm

4-p

in

3.2

x 2.

5 m

m 4

-pin

*

10

DSC

63x2

B1

100

LVCM

OS

±20,

±25

, ±53

–40

to +

125

1.71

–3.6

33

71

25

Auto

mot

ive

Osc

illat

ors

Prod

uct

Out

put F

requ

ency

M

in. (

MH

z)O

utpu

t Fre

quen

cy

Max

(MH

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pin

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3016

72

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40

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1 kH

z to

750

MHz

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to 7

50 M

HzO

TPSP

I/I²C

ü0.

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146-

pin

LBG

AZL

3016

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40

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1 kH

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750

MHz

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50 M

HzO

TPSP

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0.00

114

7-pi

n LB

GA

ZL30

169

114

–500

2 D/

SE +

2 S

E3

61

00.

251

kHz

to 1

250

MHz

1 Hz

to 1

035

MHz

Int E

ESP

I/I²C

ü0.

0132

-pin

QFN

ZL30

182

25–

500

4 D/

SE +

2 S

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122

00.

251

kHz

to 1

250

MHz

1 Hz

to 1

035

MHz

Int E

ESP

I/I²C

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0164

-pin

LG

AZL

3017

43

14–4

705

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SE

614

31

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900

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to 9

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IEEE

158

8 Ti

min

g So

lutio

ns

Part

No.

DPL

LsBW

(Hz)

Inpu

tsIn

put F

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ency

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dded

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&

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iff. O

utpu

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Gen

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RM

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m)

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361

1 NC

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1 to

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750

MHz

66

1 Hz

to 7

50 M

Hz3

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6714

4-pi

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GA

ZL30

362

4 NC

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1 to

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750

MHz

88

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50 M

Hz4

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6714

4-pi

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GA

ZL30

363

2 NC

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1 to

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750

MHz

88

1 Hz

to 7

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Hz4

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6714

4-pi

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ZL30

364

3 NC

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1 to

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750

MHz

88

1 Hz

to 7

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Hz4

00.

6714

4-pi

n LB

GA

ZL30

365

4 or

(4 N

CO)

5 to

890

8 D/

SE1

Hz to

750

MHz

88

81

Hz to

750

MHz

40

0.67

144-

pin

LBG

AZL

3036

72

or (2

NCO

)5

to 8

909

D/SE

+2 S

E1

Hz to

750

MHz

66

61

Hz to

750

MHz

30

0.67

144-

pin

LBG

AZL

3072

11

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to 1

02

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+ 1

SE

8 kH

z to

125

0 M

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035

MHz

10

0.26

64-p

in L

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ZL30

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1 to

500

2 D/

SE +

1 S

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to 1

250

MHz

36

<1 H

z to

103

5 M

Hz1

00.

2632

-pin

QFN

ZL30

723

2 NC

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1 to

500

4 D/

SE +

1 S

E8

kHz

to 1

250

MHz

612

<1 H

z to

103

5 M

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00.

2664

-pin

LG

AZL

3070

11

or (1

NCO

)0.

1m to

470

5 D/

10 S

E0.

5 Hz

to 9

00 M

Hzü

614

0.5

Hz to

900

MHz

2 or

31

0.19

100-

pin

AQFN

www.microchip.com44

IEEE

158

8 Ti

min

g So

lutio

ns

Part

No.

DPL

LsBW

(Hz)

Inpu

tsIn

put F

requ

ency

Embe

dded

PPS

&

EPP2

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iff. O

utpu

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lock

Gen

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r (ps

RM

S)Pk

g si

ze (m

m)

ZL30

702

2 or

(2 N

CO)

0.1m

to 4

705

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SE

0.5

Hz to

900

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140.

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to 9

00 M

Hz2

or 3

10.

1910

0-pi

n AQ

FNZL

3070

33

or (3

NCO

)0.

1m to

470

5 D/

10 S

E0.

5 Hz

to 9

00 M

Hzü

614

0.5

Hz to

900

MHz

2 or

31

0.19

100-

pin

AQFN

ZL30

704

4 or

(4 N

CO)

0.1m

to 4

705

D/10

SE

0.5

Hz to

900

MHz

ü6

140.

5 Hz

to 9

00 M

Hz2

or 3

10.

1910

0-pi

n AQ

FNZL

3077

11

or (1

NCO

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1m to

470

10 D

/10

SE0.

5 Hz

to 9

00 M

Hzü

816

+ 2

0.5

Hz to

104

5 M

Hz2

10.

1980

-lead

LG

AZL

3077

22

or (2

NCO

)0.

1m to

470

10 D

/10

SE0.

5 Hz

to 9

00 M

Hzü

816

+ 2

0.5

Hz to

104

5 M

Hz2

10.

1980

-lead

LG

AZL

3077

33

or (3

NCO

)0.

1m to

470

10 D

/10

SE0.

5 Hz

to 9

00 M

Hzü

816

+ 2

0.5

Hz to

104

5 M

Hz2

10.

1980

-lead

LG

A

Gen

eral

-Pur

pose

Jitt

er A

ttenu

ator

s

Prod

uct

Inde

pend

ent

Out

put F

req.

Fa

mili

esIn

puts

Diff

Inpu

t Fr

eq. R

ange

Low

-Jitt

er

APLL

sTy

pica

l Jitt

er

fs R

MS

DPL

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atur

es: R

ef.

Switc

hing

/ Hol

dove

r/

DPL

L Ba

ndw

idth

NC

O

Mod

eN

CO

pp

bD

iff O

utpu

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MO

S O

utpu

tsO

utpu

t Fre

q.

Ran

geN

V M

emor

yH

ost B

usSu

pply

Vo

ltage

Pack

age

ZL30

159

11

XTAL

, 1 D

1 Hz

to 7

50 M

1<1

000

02

1 Hz

–177

.5 M

SPI/I

²C3.

3 +

1.8

64-p

in L

BGA

ZL30

252

11

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/SE,

3

D/SE

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z to

1250

M1

1601

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s/Di

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l Hol

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0 Hz

ü0.

010–

30–

6<1

Hz–

1035

M2

Ext E

E3SP

I/I²C

3.3

+ 1.

832

-pin

QFN

ZL30

253

11

XTAL

/SE,

3

D/SE

1 kH

z to

1250

M1

1601

Glitc

hles

s/Di

gita

l Hol

d/

14 H

z–50

0 Hz

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010–

30–

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Hz–

1035

M2

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-pin

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254

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old/

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Hz

20

125

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or

156.

25 M

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3 +

1.8

32-p

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FN

ZL30

255

22

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6

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1601

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60–

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Hz–

1035

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Int E

E3SP

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3.3

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-pin

QFN

ZL30

256

35

D/10

SE

1 kH

z to

1045

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190

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s/Di

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l Hol

d

14 H

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0 Hz

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0035

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0–16

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1 Hz

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5 M

Int E

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880

-lead

LG

A

Sync

hron

ous

Ethe

rnet

(Syn

cE) S

ilico

n Ti

min

g So

lutio

ns

Part

DPL

LsBW

(Hz)

Inpu

tsIn

put F

requ

ency

Embe

dded

PPS

&

EPP2

SD

iff. O

utpu

tsC

MO

S O

utpu

tsO

utpu

t Fre

quen

cyLo

w-J

itter

APL

LsG

P C

lock

Gen

Jitte

r (ps

RM

S)Pa

ckag

e si

ze

(mm

)

ZL30

161

1 or

(1 N

CO)

0.1m

–1k

111

Hz–7

50 M

Hz6

61

Hz–7

50 M

Hz3

00.

6714

4-pi

n LB

GA

ZL30

162

4 or

(4 N

CO)

0.1m

–1k

111

Hz–7

50 M

Hz8

81

Hz–7

50 M

Hz4

00.

6714

4-pi

n LB

GA

ZL30

163

2 or

(2 N

CO)

0.1m

–1k

111

Hz–7

50 M

Hz8

81

Hz–7

50 M

Hz4

00.

6714

4-pi

n LB

GA

ZL30

164

3 or

(3 N

CO)

0.1m

–1k

111

Hz–7

50 M

Hz8

81

Hz–7

50 M

Hz4

00.

6714

4-pi

n LB

GA

ZL30

621

1 or

(1 N

CO)

0.1m

–10

2 D/

SE +

1 S

E8

kHz–

1250

MHz

36

<1 H

z–10

35 M

Hz1

00.

2664

-pin

LG

AZL

3062

21

or (1

NCO

)0.

1m–5

002

D/SE

+ 1

SE

8 kH

z–12

50 M

Hz3

6<1

Hz–

1035

MHz

10

0.26

32-p

in Q

FNZL

3062

32

or (2

NCO

)0.

1m–5

004

D/SE

+ 1

SE

8 kH

z–12

50 M

Hz6

12<1

Hz–

1035

MHz

20

0.26

64-p

in L

GA

ZL30

601

1 or

(1 N

CO)

0.1m

–470

5 D/

10 S

E0.

5 Hz

–900

MHz

ü6

140.

5 Hz

–900

MHz

2 or

31

0.19

100-

pin

AQFN

ZL30

602

2 or

(2 N

CO)

0.1m

–470

5 D/

10 S

E0.

5 Hz

–900

MHz

ü6

140.

5 Hz

–900

MHz

2 or

31

0.19

100-

pin

AQFN

ZL30

603

3 or

(3 N

CO)

0.1m

–470

5 D/

10 S

E0.

5 Hz

–900

MHz

ü6

140.

5 Hz

–900

MHz

2 or

31

0.19

100-

pin

AQFN

ZL30

604

4 or

(4 N

CO)

0.1m

–470

5 D/

10 S

E0.

5 Hz

–900

MHz

ü6

140.

5 Hz

–900

MHz

2 or

31

0.19

100-

pin

AQFN

ZL30

671

1 or

(1 N

CO)

0.1m

-470

10 D

/10

SE0.

5 Hz

-900

MHz

ü8

16 +

20.

5 Hz

-104

5 M

Hz2

10.

1980

-lead

LG

AZL

3067

22

or (2

NCO

)0.

1m-4

7010

D/1

0 SE

0.5

Hz-9

00 M

Hzü

816

+ 2

0.5

Hz-1

045

MHz

21

0.19

80-le

ad L

GA

ZL30

673

3 or

(3 N

CO)

0.1m

-470

10 D

/10

SE0.

5 Hz

-900

MHz

ü8

16 +

20.

5 Hz

-104

5 M

Hz2

10.

1980

-lead

LG

AZL

3015

11

1–50

02

D/SE

+ 1

SE

1 kH

z–65

0 M

Hz0–

30–

6<1

Hz–

650

MHz

10

0.26

32-p

in Q

FNZL

3061

11

or (1

NCO

)14

–470

5 D/

10 S

E0.

5 Hz

–900

MHz

ü6

140.

5 Hz

–900

MHz

2 or

31

0.19

100-

pin

AQFN

ZL30

612

2 or

(2 N

CO)

14–4

705

D/10

SE

0.5

Hz–9

00 M

Hzü

614

0.5

Hz–9

00 M

Hz2

or 3

10.

1910

0-pi

n AQ

FNZL

3061

44

or (4

NCO

)14

–470

5 D/

10 S

E0.

5 Hz

–900

MHz

ü6

140.

5 Hz

–900

MHz

2 or

31

0.19

100-

pin

AQFN

ZL30

681

1 or

(1 N

CO)

14-4

7010

D/1

0 SE

0.5

Hz–9

00 M

Hzü

816

+ 2

0.5

Hz–1

045

MHz

21

0.19

80-le

ad L

GA

ZL30

682

2 or

(2 N

CO)

14-4

7010

D/1

0 SE

0.5

Hz–9

00 M

Hzü

816

+ 2

0.5

Hz–1

045

MHz

21

0.19

80-le

ad L

GA

ZL30

683

3 or

(3 N

CO)

14-4

7010

D/1

0 SE

0.5

Hz–9

00 M

Hzü

816

+ 2

0.5

Hz–1

045

MHz

21

0.19

80-le

ad L

GA

Focus Product Selector Guide 45

Prog

ram

mab

le O

scill

ator

s

Prod

uct

Out

put F

requ

ency

M

in. (

MH

z)O

utpu

t Fre

quen

cy

Max

(MH

z)O

utpu

t Log

icFr

eque

ncy

St

abili

ty (p

pm)

Tem

pera

ture

R

ange

(°C

)Su

pply

Vo

ltage

(V)

Cur

rent

(T

yp) (

mA)

Pe

riod

Jitte

r (p

s R

MS)

Phas

e N

oise

(p

s R

MS)

(1

2k–2

0 M

Hz)

# O

utpu

tsD

imen

sion

sO

utpu

t Driv

e St

reng

th (p

f)

DSC

8001

117

0LV

CMO

S±1

0, ±

25, ±

50–4

0 to

+10

51.

62–3

.63

5.0

6.0

12.

5 x

2.0

mm

4-p

in

3.2

x 2.

5 m

m 4

-pin

5.

0 x

3.2

mm

4-p

in

7.0

x 5.

0 m

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105

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117

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5.0

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346

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105

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DSC

2311

2.3

170

LVCM

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±50

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to +

125

2.25

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31.

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LVCM

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105

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52.

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140

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Gen

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225

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Gen

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200

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Clo

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100

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MO

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Focus Product Selector Guide 47

Clo

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ener

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s

Prod

uct

Cat

egor

yPh

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Jitte

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) (T

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Perio

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Out

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Freq

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Clo

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ryst

al or

Ref

eren

ce3

LVC

MO

S1

200

2.5

–3.3

–45

to +

85 D

FN–6

L, S

OT–

6L

PL61

3–01

Low

Pow

er C

lock

Gen

erat

ors

30

0 C

ryst

al or

Ref

eren

ce8

LVC

MO

S1

200

1.8

–3.3

–45

to +

85 Q

FN–1

6L,

TSSO

P–16

L

PL61

1–31

Low

Pow

er C

lock

Gen

erat

ors

2.5

40 C

ryst

al or

Ref

eren

ce3

PEC

L, L

VDS,

HCS

L, C

MO

S5

200

2.5

–3.3

–45

to +

85 S

OP–

8L

PL60

2031

Non

e2

25 2

5MHz

Cry

stal

2 L

VCM

OS/

HCSL

2525

2.5

~3.3

–45

to +

85 1

6-pi

n Q

FN 3

× 3

PL

602–

27 N

one

225

25M

Hz C

ryst

al1

LVC

MO

S/HC

SL25

025

0 2

.5~3

.3–4

5 to

+85

PL60

2082

Non

e0.

2210

25M

Hz C

ryst

al8

HCS

L25

250

2.5

~3.3

–45

to +

85

PL

6070

82No

ne

8 H

CSL

2525

0 2

.5~3

.3–4

5 to

+85

PL50

0–17

VCXO

0.1

C

ryst

al1

CM

OS

1736

2.5

/3.3

–45

to +

85Di

e, S

OT–

6L,

SOP–

8L

PL50

0–15

VCXO

0.1

C

ryst

al1

CM

OS

14

2.5

/3.3

–45

to +

85 D

ie, S

OT–

6L,

SOP–

8L

PL61

1–30

Low

-Pow

er C

lock

Gen

erat

ors

2.5

40 C

ryst

al or

Ref

eren

ce3

PEC

L, L

VDS,

HCS

L, C

MO

S5

400

2.5

–3.3

–45

to +

85 D

FN–6

L, S

OT–

6L

DSC

2040

Low

-Pow

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

1 H

CSL

2.3

460

2.2

5–3.

63–4

0 to

+10

5 1

4–pi

n Q

FN,

3.2

× 2.

5 m

m ±

25, ±

50

DSC

2044

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

2 H

CSL

2.3

460

2.2

5–3.

63–4

0 to

+10

5 1

4–pi

n Q

FN,

3.2

× 2.

5 m

m ±

25, ±

50

DSC

2041

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

2 H

CSL,

LVC

MO

S2.

346

0 2

.25–

3.63

–40

to +

105

14–

pin

QFN

, 3.

2 ×

2.5

mm

±25

, ±50

DSC

2042

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

2 H

CSL,

LVP

ECL

2.3

460

2.2

5–3.

63–4

0 to

+10

5 1

4–pi

n Q

FN,

3.2

× 2.

5 m

m ±

25, ±

50

DSC

2211

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

2 L

VCM

OS

2.3

460

2.2

5–3.

63–5

5 to

+12

5 1

4–pi

n Q

FN,

3.2

× 2.

5 m

m ±

25, ±

50

DSC

400

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

4 L

VCM

OS/

LVPE

CL/L

VDS/

HCSL

2.3

460

2.2

5V to

3.6

3V–4

0 to

+10

5 5

.0 ×

3.2

mm

20

-pin

±20

/25/

50

ppm

DSC

2033

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

2 L

VDS

2.3

460

2.2

5–3.

63–4

0 to

+10

5 1

4–pi

n Q

FN,

3.2

× 2.

5 m

m ±

25, ±

50

DSC

2233

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

2 L

VDS

2.3

460

2.2

5–3.

63–4

0 to

+10

5 1

4–pi

n Q

FN,

3.2

× 2.

5 m

m ±

25, ±

50

DSC

2031

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

2 L

VDS,

LVC

MO

S2.

346

0 2

.25–

3.63

–40

to +

105

14–

pin

QFN

, 3.

2 ×

2.5m

m ±

25, ±

50

DSC

2022

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

2 L

VPEC

L2.

346

0 2

.25–

3.63

–40

to +

105

14–

pin

QFN

, 3.

2 ×

2.5

mm

±25

, ±50

DSC

2222

Low

–Jitt

er C

lock

Gen

erat

ors

1.7

0/0.

3 (2

00k–

20M

)30

Inte

grat

ed M

EMS

2 L

VPEC

L2.

346

0 2

.25–

3.63

–40

to +

105

14–

pin

QFN

, 3.

2 ×

2.5

mm

±25

, ±50

SM80

3 L

ow–J

itter

Clo

ck G

ener

ator

s0.

185

Cry

stal

or R

efer

ence

12 C

MO

S, P

ECL,

LVD

S, H

CSL

1285

0

SM

813

Low

–Jitt

er C

lock

Gen

erat

ors

0.11

55

Cry

stal

or R

efer

ence

12 P

ECL,

LVD

S, H

CSL,

CM

OS

1285

0 2

.5–3

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5 to

+85

48-

, 76-

pin

QFN

ZL

3025

0 L

ow–J

itter

Clo

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ener

ator

s0.

161

XTAL

/SE,

3 D

/SE

3D/6

SECM

L, C

MO

S<1

Hz1.

035

3.3+

1.8

–40

to +

8532

-pin

QFN

ZL30

251

Low

–Jitt

er C

lock

Gen

erat

ors

0.16

1 XT

AL/S

E, 3

D/S

E3D

/6SE

CML,

CM

OS

<1Hz

1.03

53.

3+1.

8–4

0 to

+85

32-p

in Q

FNZL

3024

4 L

ow–J

itter

Clo

ck G

ener

ator

s0.

162

XTAL

/SE,

6 D

/SE

6D/1

2SE

CML,

CM

OS

<1Hz

1.03

53.

3+1.

8–4

0 to

+85

64-p

in L

GA

ZL30

245

Low

–Jitt

er C

lock

Gen

erat

ors

0.16

2 XT

AL/S

E, 6

D/S

E6D

/12S

ECM

L, C

MO

S<1

Hz1.

035

3.3+

1.8

–40

to +

8564

-pin

LG

A

ZL30

260

Low

–Jitt

er C

lock

Gen

erat

ors

0.18

1 XT

AL/S

E, 3

D/S

E6D

/12S

ELV

DS, L

VPEC

L, H

CSL,

CM

OS,

HST

L<1

Hz1.

035

2.5

V on

ly, 3

.3 V

onl

y, 1.

8 V

+ 2.

5 V,

1.

8 V

+ 3.

3 V

–40

to +

8556

-pin

QFN

ZL30

261

Low

–Jitt

er C

lock

Gen

erat

ors

0.18

1 XT

AL/S

E, 3

D/S

E6D

/12S

ELV

DS, L

VPEC

L, H

CSL,

CM

OS,

HST

L<1

Hz1.

035

2.5

V on

ly, 3

.3 V

onl

y, 1.

8 V

+ 2.

5 V,

1.

8 V

+ 3.

3 V

–40

to +

8556

-pin

QFN

ZL30

262

Low

–Jitt

er C

lock

Gen

erat

ors

0.18

1 XT

AL/S

E, 3

D/S

E10

D/20

SELV

DS, L

VPEC

L, H

CSL,

CM

OS,

HST

L<1

Hz1.

035

2.5

V on

ly, 3

.3 V

onl

y, 1.

8 V

+ 2.

5 V,

1.

8 V

+ 3.

3 V

–40

to +

8556

-pin

QFN

ZL30

263

Low

–Jitt

er C

lock

Gen

erat

ors

0.18

1 XT

AL/S

E, 3

D/S

E10

D/20

SELV

DS, L

VPEC

L, H

CSL,

CM

OS,

HST

L<1

Hz1.

035

2.5

V on

ly, 3

.3 V

onl

y, 1.

8 V

+ 2.

5 V,

1.

8 V

+ 3.

3 V

–40

to +

8556

-pin

QFN

ZL30

264

Low

–Jitt

er C

lock

Gen

erat

ors

0.18

1 XT

AL/S

E, 3

D/S

E6D

/12S

ELV

DS, L

VPEC

L, H

CSL,

CM

OS,

HST

L<1

Hz1.

035

2.5

V on

ly, 3

.3 V

onl

y, 1.

8 V

+ 2.

5 V,

1.

8 V

+ 3.

3 V

–40

to +

8556

-pin

QFN

ZL30

265

Low

–Jitt

er C

lock

Gen

erat

ors

0.18

1 XT

AL/S

E, 3

D/S

E6D

/12S

ELV

DS, L

VPEC

L, H

CSL,

CM

OS,

HST

L<1

Hz1.

035

2.5

V on

ly, 3

.3 V

onl

y, 1.

8 V

+ 2.

5 V,

1.

8 V

+ 3.

3 V

–40

to +

8556

-pin

QFN

ZL30

266

Low

–Jitt

er C

lock

Gen

erat

ors

0.18

1 XT

AL/S

E, 3

D/S

E10

D/20

SELV

DS, L

VPEC

L, H

CSL,

CM

OS,

HST

L<1

Hz1.

035

2.5

V on

ly, 3

.3 V

onl

y, 1.

8 V

+ 2.

5 V,

1.

8 V

+ 3.

3 V

–40

to +

8556

-pin

QFN

ZL30

267

Low

–Jitt

er C

lock

Gen

erat

ors

0.18

1 XT

AL/S

E, 3

D/S

E10

D/20

SELV

DS, L

VPEC

L, H

CSL,

CM

OS,

HST

L<1

Hz1.

035

2.5

V on

ly, 3

.3 V

onl

y, 1.

8 V

+ 2.

5 V,

1.

8 V

+ 3.

3 V

–40

to +

8556

-pin

QFN

ZL30

281

PCIe

Clo

ck G

ener

ator

s0.

161

XTAL

3D/6

SECM

L, C

MO

S25

M, 1

00 M

N/A

3.3+

1.8

–40

to +

8532

-pin

QFN

www.microchip.com48

Clo

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s

Prod

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Cat

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Jitte

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pm)

ZL30

282

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Clo

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181

XTAL

6D/1

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LVDS

, LVP

ECL,

HCS

L, C

MO

S, H

STL

25 M

, 75

M,

100

MN/

A2.

5 V

only,

3.3

V o

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1.8

V +

2.5

V,

1.8

V +

3.3

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SM80

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123:

N123

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lock

G

ener

ator

s0.

079

6 C

ryst

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Ref

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ce12

PEC

L, L

VDS,

HCS

L, C

MO

S12

850

2.5

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–45

to +

85 2

4-, 4

8-pi

n Q

FN

MX8

7 L

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itter

Clo

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ener

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s0.

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6 C

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tegr

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6 P

ECL,

LVD

S, H

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CM

OS

1285

0 2

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5 to

+85

48-p

in Q

FN

Hig

h-Sp

eed

Com

mun

icat

ion:

Lim

iting

Am

plifi

ers

Prod

uct

Prod

uct T

ype

Dat

a R

ate

Cap

abili

tyPo

wer

Sup

ply

(V)

Dat

a In

put T

ype

Dat

a O

utpu

t Typ

eLO

S/SD

Pack

ages

SY84

113B

UFi

ber O

ptic

Post

Am

plifie

rs1.

25 G

bps

2.5

PECL

CML

LOS

(TTL

)16

-pin

VQ

FNSY

8805

3CL

Lim

iting

Ampl

ifiers

- Bu

rst M

ode

and

Lim

iting

Ampl

ifiers

- Co

ntin

uous

Mod

e12

.5 G

bps

3.3

CML/

PECL

CML

SD/L

OS

(TTL

)16

-pin

VQ

FNSY

8806

3CL

Lim

iting

Ampl

ifiers

- Bu

rst M

ode

and

Lim

iting

Ampl

ifiers

- Co

ntin

uous

Mod

e12

.5 G

bps

3.3

CML/

PECL

CML

SD/L

OS

(TTL

)16

-pin

VQ

FNSY

8807

3LLi

mitin

g Am

plifie

rs -

Cont

inuo

us M

ode

12.5

Gbp

s3.

3CM

L/PE

CLCM

LSD

/LO

S (T

TL)

16-p

in V

QFN

SY88

083L

Lim

iting

Ampl

ifiers

- Co

ntin

uous

Mod

e12

.5 G

bps

3.3

CML/

PECL

CML

SD/L

OS

(TTL

)16

-pin

VQ

FNSY

8814

7DL

Lim

iting

Ampl

ifiers

- Co

ntin

uous

Mod

e1.

25 G

bps

3.3

PECL

PECL

LOS

(TTL

)10

-pin

MSO

PSY

8814

9CL

Lim

iting

Ampl

ifiers

- Co

ntin

uous

Mod

e1.

25 G

bps

3.3

PECL

PECL

LOS

(TTL

)10

-pin

MSO

PSY

8814

9HAL

Lim

iting

Ampl

ifiers

- Bu

rst M

ode

1.25

Gbp

s3.

3CM

L/PE

CLPE

CLSD

/LO

S (T

TL)

16-p

in V

QFN

SY88

149N

DL

Lim

iting

Ampl

ifiers

- Bu

rst M

ode

1.25

Gbp

s3.

3CM

L/PE

CLPE

CLSD

/LO

S (T

TL)

Plea

se c

all fo

r pac

kage

info

rmat

ion

SY88

303B

LLi

mitin

g Am

plifie

rs -

Cont

inuo

us M

ode

3.2

Gbp

s3.

3PE

CLCM

LLO

S (T

TL)

10-p

in M

SOP,

16-

pin

VQFN

SY88

343B

LLi

mitin

g Am

plifie

rs -

Cont

inuo

us M

ode

3.2

Gbp

s3.

3PE

CLCM

LLO

S (T

TL)

10-p

in M

SOP,

16-

pin

VQFN

SY88

349N

DL

Lim

iting

Ampl

ifiers

- Bu

rst M

ode

2.5

Gbp

s3.

3CM

L/PE

CLPE

CLSD

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S (T

TL)

Plea

se c

all fo

r pac

kage

info

rmat

ion

SY88

353B

LLi

mitin

g Am

plifie

rs -

Cont

inuo

us M

ode

3.2

Gbp

s3.

3PE

CL w

ith In

tern

al 50

O to

Vre

fCM

LLO

S (T

TL)

16-p

in V

QFN

SY88

403B

LLi

mitin

g Am

plifie

rs -

Cont

inuo

us M

ode

4.25

Gbp

s3.

3PE

CLCM

LLO

S (T

TL)

10-p

in M

SOP,

16-

pin

VQFN

SY88

773V

Lim

iting

Ampl

ifiers

- Co

ntin

uous

Mod

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2 G

bps

3.3,

5.0

PECL

CML

LOS

(TTL

)16

-pin

VQ

FNSY

8880

3VLi

mitin

g Am

plifie

rs -

Cont

inuo

us M

ode

0.16

Gbp

s3.

3, 5

.0PE

CLPE

CLLO

S (T

TL)

10-p

in M

SOP

SY88

813V

Lim

iting

Ampl

ifiers

- Co

ntin

uous

Mod

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16 G

bps

3.3,

5.0

PECL

PECL

SD (P

ECL)

10-p

in M

SOP

SY88

843V

Lim

iting

Ampl

ifiers

- Co

ntin

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Mod

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2 G

bps

3.3,

5.0

PECL

CML

SD (T

TL)

Plea

se c

all fo

r pac

kage

info

rmat

ion

SY88

893V

Fibe

r Opt

ic Po

st A

mpl

ifiers

0.15

5 G

bps

PECL

PECL

SD (T

TL)

10-p

in M

SOP

SY88

903A

LLi

mitin

g Am

plifie

rs -

Cont

inuo

us M

ode

1.25

Gbp

s3.

3PE

CLPE

CLLO

S (T

TL)

10-p

in M

SOP

SY88

903V

Lim

iting

Ampl

ifiers

- Co

ntin

uous

Mod

e1.

25 G

bps

3.3,

5.0

PECL

PECL

LOS

(TTL

)10

-pin

MSO

PSY

8892

3AV

Fibe

r Opt

ic Po

st A

mpl

ifiers

3.2

Gbp

s3.

3, 5

PECL

PECL

LOS

(TTL

)10

-pin

MSO

PSY

8893

3AL

Lim

iting

Ampl

ifiers

- Co

ntin

uous

Mod

e1.

25 G

bps

3.3

PECL

PECL

SD (T

TL)

10-p

in M

SOP

SY84

403B

LLi

mitin

g Am

plifie

rs -

Cont

inuo

us M

ode

4.25

Gbp

s3.

3PE

CL w

ith In

tern

al 50

O to

Vre

fCM

LLO

S (T

TL)

Plea

se c

all fo

r pac

kage

info

rmat

ion

Focus Product Selector Guide 49

Hig

h-Sp

eed

Com

mun

icat

ion:

Las

er D

iode

Driv

ers

Prod

uct

Prod

uct T

ype

Dat

a R

ate

Cap

abili

tyPo

wer

Sup

ply

(V)

Dat

a In

put T

ype

Mod

ulat

ion

Cur

rent

Bias

Cur

rent

Pack

ages

SY84

782U

DFB/

FP L

aser

Driv

ers

1.25

Gbp

s2.

5CM

L90

16-p

in V

QFN

SY88

022A

LDF

B/FP

Las

er D

river

s11

.3 G

bps

3.3

6080

Plea

se c

all fo

r pac

kage

info

rmat

ion

SY88

024L

VCSE

L Dr

ivers

11.3

Gbp

s3.

320

20Pl

ease

call

for p

acka

ge in

form

atio

nSY

8842

2LDF

B/FP

Las

er D

river

s4.

25 G

bps

3.3

9016

-pin

VQ

FNSY

8882

2VDF

B/FP

Las

er D

river

s0.

155

Gbp

s3.

3, 5

.010

-pin

MSO

PSY

8892

2VDF

B/FP

Las

er D

river

s2.

5 G

bps

3.3,

5.0

2510

-pin

MSO

PSY

8893

2LDF

B/FP

Las

er D

river

s4.

25 G

bps

3.3

CML

6016

-pin

VQ

FNSY

8898

2LDF

B/FP

Las

er D

river

s2.

7 G

bps

3.3

9016

-pin

VQ

FNSY

8899

2LVC

SEL

Drive

rs4.

25 G

bps

3.3

2516

-pin

VQ

FN

Hig

h-Sp

eed

Com

mun

icat

ion:

Las

er D

iode

Driv

ers

Prod

uct

Prod

uct T

ype

Dat

a R

ate

Cap

abili

tyPo

wer

Sup

ply

(V)

LA D

ata

Inpu

t Typ

eLA

Dat

a O

utpu

t Typ

eLD

D D

ata

Inpu

t Typ

eLD

D M

odul

atio

n C

urre

nt (m

A)LD

D B

ias

Cur

rent

(mA)

Pack

ages

SY88

432L

Tran

sceiv

ers

4.25

Gbp

s3.

3CM

LCM

LCM

L60

24-p

in V

QFN

Hig

h-Sp

eed

Com

mun

icat

ion:

Fib

er O

ptic

Mod

ule

Con

trol

lers

Prod

uct

Prod

uct T

ype

Pow

er S

uppl

y (V

)Se

rial I

nter

face

Pack

ages

MIC

3001

GM

LFO

M C

ontro

llers

3.3

I² C S

MBu

s Co

mpl

iant

Plea

se c

all fo

r pac

kage

info

rmat

ion

MIC

3003

GFL

FOM

Con

trolle

rs3.

3I² C

SM

Bus

Com

plian

tPl

ease

call

for p

acka

ge in

form

atio

nM

IC30

03G

ML

FOM

Con

trolle

rs3.

3I² C

SM

Bus

Com

plian

tPl

ease

call

for p

acka

ge in

form

atio

n

Hig

h-Sp

eed

Com

mun

icat

ion:

Clo

ck a

nd D

ata

Rec

over

y

Prod

uct

Prod

uct T

ype

Dat

a R

ate

Cap

abili

tyPo

wer

Sup

ply

(V)

Dat

a In

put T

ype

Dat

a O

utpu

t Typ

ePa

ckag

es

SY69

753A

LCl

ock

and

Data

Rec

over

y12

5–15

5 M

bps

3.3

PECL

32/T

QFP

SY87

700A

LCl

ock

and

Data

Rec

over

y32

–208

Mbp

s3.

3PE

CLPl

ease

call

for p

acka

ge in

form

atio

nSY

8770

1AL

Cloc

k an

d Da

ta R

ecov

ery

28–1

300

Mbp

s3.

3PE

CLPl

ease

call

for p

acka

ge in

form

atio

n

Mem

ory

Prod

ucts

: Ser

ial F

lash

Prod

uct

Bus

Den

sity

Org

aniz

atio

nM

ax. C

lock

Fr

eque

ncy

Ope

ratin

g Vo

ltage

Tem

pera

ture

R

ange

E/W

End

uran

ce

(Typ

ical

)D

ata

Ret

entio

n (M

inim

um)

Writ

e Sp

eed

(Typ

ical

)M

ax. S

tand

by

Cur

rent

(@ 8

5˚C

)H

ard

Pin

Prot

ect

Softw

are

Prot

ect

Prot

ecte

d Ar

ray

Size

Pack

ages

SST2

5VF5

12A

× 1

512

Kb×

833

MHz

2.7–

3.6V

−40°

C to

+85

°C10

0k10

0 Ye

ars

14 µ

s (B

yte

Prog

ram

)8

µAY

YVa

rious

8L-S

OIC

, 8C-

WSO

N

SST2

5VF0

10A

× 1

1 M

b×

833

MHz

2.7–

3.6V

−40°

C to

+85

°C10

0k10

0 Ye

ars

14 µ

s (B

yte

Prog

ram

)8

µAY

YVa

rious

8L-S

OIC

, 8C-

WSO

N

SST2

5VF0

20B

× 1

2 M

b×

880

MHz

2.7–

3.6V

−40°

C to

+85

°C10

0k10

0 Ye

ars

7 µs

(Wor

d Pr

ogra

m)

5 µA

YY

Vario

us8L

-SO

IC, 8

C-W

SON

SST2

5WF0

20A

× 1

2 M

b×

840

MHz

1.65

–1.9

5V−4

0°C

to +

85°C

100k

20 Y

ears

3 m

s (P

age

Prog

ram

)10

µA

YY

Vario

us8L

-SO

IC, 8

C-W

SON,

8C-

USO

N,

9B-W

LCSP

SST2

6VF0

20A

× 1,

x 2

, x

42

Mbi

t×

810

4 M

Hz2.

3V–3

.6V

−40°

C to

+12

5°C

100k

100

Year

s1

ms

(Pag

e Pr

ogra

m)

30 µ

AY

YVa

rious

8L-S

OIC

, 8C-

WDF

N

SST2

5PF0

40C

× 1,

x 2

4 M

bit

× 8

40 M

Hz2.

3−3.

6V−4

0°C

to +

125°

C10

0k20

Yea

rs4

ms

(Pag

e Pr

ogra

m)

50 µ

AY

YVa

rious

8L-S

OIC

, 8C-

WSO

N, 8

C-US

ON

SST2

5VF0

40B

× 1

4 M

b×

840

MHz

2.7–

3.6V

−40°

C to

+85

°C10

0k10

0 Ye

ars

7 µs

(Wor

d Pr

ogra

m)

5 µA

YY

Vario

us8L

-SO

IC, 8

C-W

SON

SST2

6WF0

40B/

BA×

1, x

2,

x 4

4 M

b×

810

4 M

Hz1.

65–1

.95V

−40°

C to

+85

°C10

0k10

0 Ye

ars

1 m

s (P

age

Prog

ram

)40

µA

YY

Vario

us8L

-SO

IC, 8

C-W

SON,

8C-

USO

N,

8B-W

LCSP

SST2

5WF0

40B

× 1,

x 2

4 M

b×

840

MHz

1.65

–1.9

5V−4

0°C

to +

125°

C10

0k20

Yea

rs0.

8 m

s (P

age

Prog

ram

)50

µA

YY

Vario

us8L

-SO

IC, 8

C- U

DFN,

8C-

USO

N,

9B-W

LCSP

SST2

6VF0

40A

× 1,

x 2

, x

44

Mbi

t×

810

4 M

Hz2.

3−3.

6V−4

0°C

to +

125°

C10

0k10

0 Ye

ars

1 m

s (P

age

Prog

ram

)30

µA

YY

Vario

us8L

-SO

IC, 8

C-W

DFN

SST2

5VF0

80B

× 1

8 M

b×

840

MHz

2.7–

3.6V

−40°

C to

+85

°C10

0k10

0 Ye

ars

7 µs

(Wor

d Pr

ogra

m)

5 µA

YY

Vario

us8L

-SO

IC, 8

C-W

SON,

8B-

XFBG

A

www.microchip.com50

Mem

ory

Prod

ucts

: Ser

ial F

lash

Prod

uct

Bus

Den

sity

Org

aniz

atio

nM

ax. C

lock

Fr

eque

ncy

Ope

ratin

g Vo

ltage

Tem

pera

ture

R

ange

E/W

End

uran

ce

(Typ

ical

)D

ata

Ret

entio

n (M

inim

um)

Writ

e Sp

eed

(Typ

ical

)M

ax. S

tand

by

Cur

rent

(@ 8

5˚C

)H

ard

Pin

Prot

ect

Softw

are

Prot

ect

Prot

ecte

d Ar

ray

Size

Pack

ages

SST2

5WF0

80B

× 1,

x 2

8 M

b×

840

MHz

1.65

–1.9

5V−4

0°C

to +

125°

C10

0k20

Yea

rs0.

8 m

s (P

age

Prog

ram

)50

µA

YY

Vario

us8L

-SO

IC, 8

C- U

DFN,

8C-

USO

N,

9B-W

LCSP

SST2

6VF0

80A

× 1,

x 2

, x

48

Mb

× 8

104

MHz

2.3–

3.6V

−40°

C to

+12

5°C

100k

100

Year

s1

ms

(Pag

e Pr

ogra

m)

30 µ

AY

YVa

rious

8L-S

OIC

, 8C-

WDF

N

SST2

6WF0

80B/

BA×

1, x

2,

x 4

8 M

b×

810

4 M

Hz1.

65–1

.95V

−40°

C to

+85

°C10

0k10

0 Ye

ars

1 m

s (P

age

Prog

ram

)40

µA

YY

Vario

us8L

-SO

IC, 8

C-W

SON,

8C-

USO

N,

8B-W

LCSP

SST2

6WF0

16B/

BA×

1, x

2,

x 4

16 M

b×

810

4 M

Hz1.

65–1

.95V

−40°

C to

+85

°C10

0k10

0 Ye

ars

1 m

s (P

age

Prog

ram

)40

µA

YY

Vario

us8L

-SO

IC, 8

C-W

SON,

8B-

WLC

SP

SST2

6VF0

16B

× 1,

x 2

, x

416

Mb

× 8

104

MHz

2.3–

3.6V

−40°

C to

+12

5°C

100k

100

Year

s1

ms

(Pag

e Pr

ogra

m)

45 µ

AY

YVa

rious

8L-S

OIC

, 8L-

SOIJ

, 8C-

WSO

N

SST2

6VF0

32B/

BA×

1, x

2,

x 4

32 M

b×

810

4 M

Hz2.

3–3.

6V−4

0°C

to +

125°

C10

0k10

0 Ye

ars

1 m

s (P

age

Prog

ram

)45

µA

YY

Vario

us8L

-SO

IJ, 8

C-W

SON,

24B

-TBG

A

SST2

6VF0

64B/

BA×

1, x

2,

x 4

64 M

b×

810

4 M

Hz2.

3–3.

6V−4

0°C

to +

105°

C10

0k10

0 Ye

ars

1 m

s (P

age

Prog

ram

)45

µA

YY

Vario

us8L

-SO

IJ, 1

6L-S

OIC

, 8C-

WSO

N,

8C-T

DFN-

S, 2

4B-T

BGA

SST2

6WF0

64C

× 1,

x 2

, x

464

Mb

× 8

104

MHz

1.65

–1.9

5V−4

0°C

to +

85°C

100k

100

year

s1.

5 m

s (P

age

Prog

ram

)40

µA

YY

Vario

us8L

-SO

IJ, 1

6L-S

OIC

, 8C-

WSO

N,

24B-

TBG

A

Mem

ory

Prod

ucts

: Par

alle

l Fla

sh

Prod

uct

Den

sity

Bus

Org

aniz

atio

nAc

cess

Ti

me

(ns)

Ope

ratin

g Vo

ltage

Tem

pera

ture

R

ange

(°C

)

E/W

En

dura

nce

(Min

imum

)

Dat

a R

eten

tion

(Min

imum

)W

rite

Spee

d (T

ypic

al)

Typ.

St

andb

y C

urre

nt

Har

d Pi

n Pr

otec

tSo

ftwar

e Pr

otec

t

Prot

ecte

d Ar

ray

Size

(K

B)Sp

ecia

l/ U

niqu

e Fe

atur

esPa

ckag

es

SST3

9SF0

10A

1 M

b×

8×

870

4.5–

5.5V

–40

to +

8510

0K10

0 Ye

ars

14 µ

s (B

yte

Prog

ram

)30

µA

––

N/A

Fast

read

, pro

gram

and

era

se; L

ow p

ower

; Sm

all e

rase

sec

tor

32L-

PLCC

, 32L

-PDI

P,

32L-

TSO

P

SST3

9LF0

101

Mb

× 8

× 8

553.

0–3.

6V0

to 7

010

0K10

0 Ye

ars

14 µ

s (B

yte

Prog

ram

)1

µA–

–N/

AFa

st re

ad, p

rogr

am a

nd e

rase

; Low

pow

er;

Small

era

se s

ecto

r48

B-TF

BGA,

32L

-TSO

P,

32L-

PLCC

SST3

9VF0

101

Mb

× 8

× 8

702.

7–3.

6V–4

0 to

+85

100K

100

Year

s14

µs

(Byt

e Pr

ogra

m)

1 µA

––

N/A

Fast

read

, pro

gram

and

era

se; L

ow p

ower

; Sm

all e

rase

sec

tor

48B-

TFBG

A, 3

2L-T

SOP,

32

L-PL

CC

SST3

9SF0

20A

2 M

b×

8×

855

, 70

4.5–

5.5V

–40

to +

8510

0K10

0 Ye

ars

14 µ

s (B

yte

Prog

ram

)30

µA

––

N/A

Fast

read

, pro

gram

and

era

se; L

ow p

ower

; Sm

all e

rase

sec

tor

32L-

PLCC

, 32L

-PDI

P,

32L-

TSO

P

SST3

9VF0

202

Mb

× 8

× 8

702.

7–3.

6V–4

0 to

+85

100K

100

Year

s14

µs

(Byt

e Pr

ogra

m)

1 µA

––

N/A

Fast

read

, pro

gram

and

era

se; L

ow p

ower

; Sm

all e

rase

sec

tor

48B-

TFBG

A, 3

2L-T

SOP,

32

L-PL

CC

SST3

9SF0

404

Mb

× 8

× 8

704.

5–5.

5V–4

0 to

+85

100K

100

Year

s14

µs

(Byt

e Pr

ogra

m)

30 µ

A–

–N/

AFa

st re

ad, p

rogr

am a

nd e

rase

; Low

pow

er;

Small

era

se s

ecto

r32

L-PL

CC, 3

2L-P

DIP,

32

L-TS

OP

SST3

9WF4

00B

4 M

b×

16×

1670

1.65

– 1.

95V

–40

to +

8510

0K10

0 Ye

ars

28 µ

s (W

ord

Prog

ram

)40

µA

––

N/A

Fast

read

, pro

gram

and

era

se; L

ow p

ower

; Sm

all e

rase

sec

tor

48B-

TFBG

A,

48B-

WFB

GA,

48

B-XF

BGA

SST3

9VF4

0xC

4 M

b×

16×

1670

2.7–

3.6V

–40

to +

8510

0K10

0 Ye

ars

7 µs

(Wor

d Pr

ogra

m)

3 µA

Y–

8Fa

st re

ad, p

rogr

am a

nd e

rase

; Low

pow

er;

Small

era

se s

ecto

r; In

dust

ry-s

tand

ard

com

man

d se

t and

boo

t blo

ck s

truct

ure

48B-

TFBG

A, 4

8L-T

SOP,

48

B-W

FBG

A

SST3

9WF8

00B

8 M

b×

16×

1670

1.65

– 1.

95V

–40

to +

8510

0K10

0 Ye

ars

28 µ

s (W

ord

Prog

ram

)40

µA

––

N/A

Fast

read

, pro

gram

and

era

se; L

ow p

ower

; Sm

all e

rase

sec

tor

48B-

TFBG

A,

48B-

WFB

GA,

48

B-XF

BGA

SST3

9LF8

0xC

8 M

b×

16×

1655

3.0–

3.6V

0 to

70

100K

100

Year

s7

µs (W

ord

Prog

ram

)3

µAY

–N/

AFa

st re

ad, p

rogr

am a

nd e

rase

; Low

pow

er;

Small

era

se s

ecto

r; In

dust

ry-s

tand

ard

com

man

d se

t and

boo

t blo

ck s

truct

ure

48B-

TFBG

A, 4

8L-T

SOP,

48

B-W

FBG

A

SST3

9VF8

0xC

8 M

b×

16×

1670

2.7–

3.6V

–40

to +

8510

0K10

0 Ye

ars

7 µs

(Wor

d Pr

ogra

m)

3 µA

Y–

N/A

Fast

read

, pro

gram

and

era

se; L

ow p

ower

; Sm

all e

rase

sec

tor;

Indu

stry

-sta

ndar

d co

mm

and

set a

nd b

oot b

lock

stru

ctur

e

48B-

TFBG

A, 4

8L-T

SOP,

48

B-W

FBG

A

SST3

9WF1

60x

16 M

b×

16×

1670

1.65

–1.9

5V–4

0 to

+85

100K

100

Year

s28

µs

(Wor

d Pr

ogra

m)

40 µ

AY

–64

Fast

read

, pro

gram

and

era

se; L

ow p

ower

; Sm

all e

rase

sec

tor

48B-

TFBG

A, 4

8B-W

FBG

A,

48B-

XFBG

A

SST3

9VF1

60xC

16 M

b×

16×

1670

2.7–

3.6V

–40

to +

8510

0K10

0 Ye

ars

7 µs

(Wor

d Pr

ogra

m)

3 µA

Y–

8Fa

st re

ad, p

rogr

am a

nd e

rase

; Low

pow

er;

Small

era

se s

ecto

r; In

dust

ry-s

tand

ard

com

man

d se

t and

boo

t blo

ck s

truct

ure

48B-

TFBG

A, 4

8L-T

SOP,

48

B-W

FBG

A

Focus Product Selector Guide 51

Mem

ory

Prod

ucts

: Par

alle

l Fla

sh

Prod

uct

Den

sity

Bus

Org

aniz

atio

nAc

cess

Ti

me

(ns)

Ope

ratin

g Vo

ltage

Tem

pera

ture

R

ange

(°C

)

E/W

En

dura

nce

(Min

imum

)

Dat

a R

eten

tion

(Min

imum

)W

rite

Spee

d (T

ypic

al)

Typ.

St

andb

y C

urre

nt

Har

d Pi

n Pr

otec

tSo

ftwar

e Pr

otec

t

Prot

ecte

d Ar

ray

Size

(K

B)Sp

ecia

l/ U

niqu

e Fe

atur

esPa

ckag

es

SST3

9VF3

20xC

32 M

b×

16×

1670

2.7–

3.6V

–40

to +

8510

0K10

0 Ye

ars

7 µs

(Wor

d Pr

ogra

m)

4 µA

Y–

8Fa

st re

ad, p

rogr

am a

nd e

rase

; Low

pow

er;

Small

era

se s

ecto

r; In

dust

ry-s

tand

ard

com

man

d se

t and

boo

t blo

ck s

truct

ure

48B-

TFBG

A, 4

8L-T

SOP

SST3

8VF6

40xB

64 M

b×

16×

1670

2.7–

3.6V

–40

to +

8510

0K10

0 Ye

ars

7 µs

/1.7

5 µs

(W

rite

Buffe

r Pr

ogra

m)

3 µA

YY

32, 8

Fast

read

, pro

gram

and

era

se; L

ow p

ower

; In

dust

ry-s

tand

ard

com

man

d se

t and

boo

t bl

ock

stru

ctur

e, S

ecur

ity fe

atur

es48

B-TF

BGA,

48L

-TSO

P

Mem

ory

Prod

ucts

: Ser

ial E

EPR

OM

Bus

Product

Density

Organization

Max. Clock Frequency

Operating Voltage (V)

Temperature Range

E/W Endurance (Minimum)

Data Retention (Minimum)

Factory Programmed Serial Number

Max. Standby Current (@ 85°C)

Hard Pin Protect

Software Protect

Protected Array Size

Special/Unique Features

Packages

Single Wire

AT21

CS0

11

Kb×

812

5 kb

ps1.

7–3.

6−4

0°C

to

+85°

C1M

100

Year

sY

2.5

uA–

YW

, ¾,

½, ¼

Two

pins

onl

y: S

I/O a

nd G

ND. 2

56-b

it se

curit

y re

gist

er w

ith 6

4-bi

t ser

ial

num

ber

SOIC

(SS)

, SO

T-23

(ST)

, UDF

N (M

A), W

LCSP

(U

), XS

FN (M

S)

AT21

CS1

11

Kb×

812

5 kb

ps2.

7 to

4.5

−40°

C to

+8

5°C

1M10

0 Ye

ars

Y2.

5 uA

–Y

W, ¾

, ½

, ¼Tw

o pi

ns o

nly:

SI/O

and

GND

. 256

-bit

secu

rity

regi

ster

with

64-

bit s

erial

nu

mbe

rSO

IC (S

S), S

OT-

23 (S

T), U

DFN

(MA)

, WLC

SP

(U),

XSFN

(MS)

I²C

24xx

0012

8 b

× 8

400

kHz

1.7–

5.5

−40°

C to

+1

25°C

1M20

0 Ye

ars

N1

µA–

––

No a

ddre

ss p

ins

- sin

gle

slave

add

ress

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, DFN

(MNY

), 5-

SOT-

23 (O

T)

24xx

01/0

1H1

Kbx

81

MHz

1.7-

5.5

-40°

C to

+1

25°C

1M20

0 Ye

ars

N1

µAY

-W

, ½No

add

ress

pin

s - s

ingl

e sla

ve a

ddre

ssPD

IP (P

),SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

C), T

DFN

(MNY

), UD

FN (M

UY),

5-SO

T-23

(OT)

, SC7

0 (LT

)

AT24

C01

C1

Kbx

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

N6

μAY

–W

Thre

e ad

dres

s pi

ns -

casc

ade

up to

eigh

t dev

ices

to s

hare

a c

omm

on 2

-wire

bus

PDIP

(P),

SOIC

(SS)

, SO

T-23

(ST)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

)

24xx

014/

014H

1 Kb

x 8

400

KHz

1.7-

5.5

-40°

C to

+1

25°C

1M20

0 Ye

ars

N1

µAY

-W

, ½Th

ree

addr

ess

pins

; pag

e siz

e =

16 B

ytes

PDIP

(P),S

OIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S),

DFN

(MC)

, TDF

N (M

NY),

5-SO

T-23

(OT)

AT24

CS0

11

Kbx

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

Y6

μAY

–W

Uniq

ue 1

28-b

it se

rial n

umbe

r sep

arat

e fro

m th

e m

ain m

emor

y ar

ray

SOIC

(SS)

, TSO

T (S

T), T

SSO

P (X

), UD

FN (M

A)

AT24

CSW

011

Kbx

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

Y0.

8 uA

–Y

W, ¾

, ½

, ¼

Softw

are

Slav

e Ad

dres

s, 2

56-b

it se

curit

y re

gist

er s

epar

ate

from

the

main

ar

ray

(128

-bit

regi

ster

fact

ory-

prog

ram

med

, 128

-bit

user

pro

gram

mab

le an

d pe

rman

ently

lock

able)

, writ

e pr

otec

t can

also

be

perm

anen

tly lo

cked

WLC

SP (U

)

24xx

02E4

8/ E

64/

UID

2 Kb

× 8

400

kHz

1.7–

5.5

1.5–

3.6

−40°

C to

+1

25°C

1M20

0 Ye

ars

Y1

µAY

–W

, ½Th

ree

addr

ess

pins

- ca

scad

e up

to e

ight

dev

ices

to s

hare

a c

omm

on 2

-wire

bu

s, u

niqu

e EU

I-48/

EUI-6

4 M

AC a

ddre

ss a

nd u

niqu

e ID

opt

ions

ava

ilabl

ePD

IP (P

), SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

NY),

5-SO

T-23

(OT)

, SC7

0 (LT

)

24xx

02/0

2H2

Kbx

81

MHz

1.7-

5.5

-40°

C to

+1

25°C

1M20

0 Ye

ars

N1

µAY

-W

, ½No

add

ress

pin

s - s

ingl

e sla

ve a

ddre

ssPD

IP (P

),SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

C), T

DFN

(MNY

), UD

FN (M

UY),

5-SO

T-23

(OT)

, SC7

0 (LT

)

24xx

024/

25/2

4H2

Kbx

840

0 KH

z1.

7-5.

5-4

0°C

to

+125

°C1M

200

Year

sN

1 µA

Y -

W, ½

Thre

e ad

dres

s pi

ns; p

age

size

= 16

Byt

esPD

IP (P

),SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

NY),

5-SO

T-23

(OT)

, SC7

0 (LT

)

AT24

C02

C2

Kbx

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

N6

μAY

–W

Thre

e ad

dres

s pi

ns -

casc

ade

up to

eigh

t dev

ices

to s

hare

a c

omm

on 2

-wire

bus

PDIP

(P),

SOIC

(SS)

, SO

T-23

(ST)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

)

AT24

CS0

22

Kbx

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

Y6

μAY

–W

Uniq

ue 1

28-b

it se

rial n

umbe

r sep

arat

e fro

m th

e m

ain m

emor

y ar

ray

SOIC

(SS)

, TSO

T (S

T), T

SSO

P (X

), UD

FN (M

A)

AT24

CSW

022

Kbx

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

Y0.

8 uA

–Y

W, ¾

, ½

, ¼

Softw

are

Slav

e Ad

dres

s, 2

56-b

it se

curit

y re

gist

er s

epar

ate

from

the

main

ar

ray

(128

-bit

regi

ster

fact

ory-

prog

ram

med

, 128

-bit

user

pro

gram

mab

le an

d pe

rman

ently

lock

able)

, writ

e pr

otec

t can

also

be

perm

anen

tly lo

cked

WLC

SP (U

)

AT24

HC

02C

2 Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

6 μA

Y–

½Th

ree

addr

ess

pins

- ca

scad

e up

to e

ight

dev

ices

to s

hare

a c

omm

on 2

-wire

bu

s, h

alf a

rray

writ

e pr

otec

tPD

IP (P

), SO

IC (S

S), T

SSO

P (X

)

AT24

MAC

402/

602

2 Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+85°

C1M

100

Year

sY

6 μA

YY

W, ½

Uniq

ue IE

EE -p

rovid

ed 4

8/64

-bit

pre-

prog

ram

med

MAC

/EUI

add

ress

, uni

que

read

-onl

y 12

8-bi

t ser

ial n

umbe

rSO

IC (S

S), T

SOT

(ST)

, TSS

OP

(X),

UDFN

(MA)

www.microchip.com52

Mem

ory

Prod

ucts

: Ser

ial E

EPR

OM

Bus

Product

Density

Organization

Max. Clock Frequency

Operating Voltage (V)

Temperature Range

E/W Endurance (Minimum)

Data Retention (Minimum)

Factory Programmed Serial Number

Max. Standby Current (@ 85°C)

Hard Pin Protect

Software Protect

Protected Array Size

Special/Unique Features

Packages

I²C

24xx

04/0

4H4

Kbx

81

MHz

1.7-

5.5

-40°

C to

+1

25°C

1M20

0 Ye

ars

N1

µAY

-W

, ½No

add

ress

pin

s - s

ingl

e sla

ve a

ddre

ssPD

IP (P

),SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

C), T

DFN

(MNY

), UD

FN (M

UY),

5-SO

T-23

(OT)

, CS1

6K (C

SP)

24xx

044

4 Kb

x 8

1 M

Hz1.

7-5.

5-4

0°C

to

+125

°C1M

200

Year

sN

1 µA

Y -

WTh

ree

addr

ess

pins

; pag

e siz

e =

16 B

ytes

PDIP

(P),S

OIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S),

UDFN

(MUY

)

AT24

C04

C4

Kbx

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

N6

μAY

–W

Two

addr

ess

pins

- ca

scad

e up

to fo

ur d

evice

s to

sha

re a

com

mon

2-w

ire b

us.

PDIP

(P),

SOIC

(SS)

, SO

T-23

(ST)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

)

AT24

CS0

44

Kbx

81

MHz

1.7–

5.5

−40°

C to

+8

5°C

1M10

0 Ye

ars

Y6

μAY

–W

Uniq

ue 1

28-b

it se

rial n

umbe

r sep

arat

e fro

m th

e m

ain m

emor

y ar

ray

SOIC

(SS)

, TSO

T (S

T), T

SSO

P (X

), UD

FN (M

A)

AT24

CSW

044

Kbx

81

MHz

1.7–

5.5

−40°

C to

+8

5°C

1M10

0 Ye

ars

Y0.

8 μA

–Y

W, ¾

, ½

, ¼

Softw

are

Slav

e Ad

dres

s, 2

56-b

it se

curit

y re

gist

er s

epar

ate

from

the

main

ar

ray

(128

-bit

regi

ster

fact

ory-

prog

ram

med

, 128

-bit

user

pro

gram

mab

le an

d pe

rman

ently

lock

able)

, writ

e pr

otec

t can

also

be

perm

anen

tly lo

cked

WLC

SP (U

)

AT24

HC

04B

4 Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

0.8

μAY

–½

Two

addr

ess

pins

- ca

scad

e up

to fo

ur d

evice

s to

sha

re a

com

mon

2-w

ire b

us,

half

arra

y w

rite

prot

ect

PDIP

(PU)

, SO

IC (S

), TS

SOP

(T)

24xx

08/0

8H8

Kbx

81

MHz

1.7-

5.5

-40°

C to

+1

25°C

1M20

0 Ye

ars

N1

µAY

-W

, 1/2

No a

ddre

ss p

ins

- sin

gle

slave

add

ress

; pag

e siz

e =

16 B

ytes

PDIP

(P),S

OIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S),

DFN

(MC)

, TDF

N (M

NY),

UDFN

(MUY

), 5-

SOT-

23 (O

T), C

S16K

(CSP

)

AT24

C08

C8

Kbx

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

N6

μAY

–W

One

add

ress

pin

- ca

scad

e up

to tw

o de

vices

to s

hare

a c

omm

on 2

-wire

bus

PDIP

(P),

SOIC

(SS)

, SO

T-23

(ST)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

)

AT24

CS0

88

Kbx

81

MHz

1.7–

5.5

−40°

C to

+8

5°C

1M10

0 Ye

ars

Y6

μAY

–W

Uniq

ue 1

28-b

it se

rial n

umbe

r sep

arat

e fro

m th

e m

ain m

emor

y ar

ray

SOIC

(SS)

, TSO

T (S

T), T

SSO

P (X

), UD

FN (M

A)

AT24

CSW

088

Kbx

81

MHz

1.7–

5.5

−40°

C to

+8

5°C

1M10

0 Ye

ars

Y0.

8 μA

–Y

W, ¾

, ½

, ¼

Softw

are

Slav

e Ad

dres

s, 2

56-b

it se

curit

y re

gist

er s

epar

ate

from

the

main

ar

ray

(128

-bit

regi

ster

fact

ory-

prog

ram

med

, 128

-bit

user

pro

gram

mab

le an

d pe

rman

ently

lock

able)

, writ

e pr

otec

t can

also

be

perm

anen

tly lo

cked

WLC

SP (U

)

24xx

1616

Kb

× 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

200

Year

sN

1 µA

Y–

W, ½

Thre

e ad

dres

s pi

ns -

casc

ade

up to

eig

ht d

evice

s to

sha

re a

co

mm

on 2

-wire

bus

, 16

byte

pag

e w

rite

buffe

r

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S),

DFN

(MC)

, DFN

(MNY

), 5-

SOT-

23 (O

T), W

LCSP

(C

S), U

DFN

(MUY

)

AT24

C16

C16

Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+85°

C1M

100

Year

sN

6.0

μAY

–W

No a

ddre

ss p

ins

- sin

gle

slave

add

ress

PDIP

(P),

SOIC

(SS)

, SO

T-23

(ST)

, TSS

OP

(X),

UDFN

(MA)

, VFB

GA

(C),

XDFN

(ME)

AT24

CS1

616

Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sY

6 μA

Y–

WNo

add

ress

pin

s - s

ingl

e sla

ve a

ddre

ssSO

IC (S

S), T

SOT

(ST)

, TSS

OP

(X),

UDFN

(MA)

24xx

32A

32

Kb×

840

0 kH

z1.

7–5.

5−4

0°C

to

+125

°C1M

200

Year

sN

1 µA

Y–

W, ¼

Thre

e ad

dres

s pi

ns -

casc

ade

up to

eig

ht d

evice

s to

sha

re a

co

mm

on 2

-wire

bus

, 32

byte

pag

e w

rite

buffe

rPD

IP (P

), SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

NY),

5-SO

T-23

(OT)

, WLC

SP (C

S)

AT24

C32

D32

Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

0.8

uAY

–W

Thre

e ad

dres

s pi

ns -

casc

ade

up to

eig

ht d

evice

s to

sha

re a

co

mm

on 2

-wire

bus

, 32

byte

pag

e w

rite

buffe

rSO

IC (S

S), S

OT-

23 (S

T), T

SSO

P (X

), UD

FN

(MA)

, UDF

N (M

AP),

VFBG

A (C

), XD

FN (M

E)

AT24

CS3

232

Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+85°

C1M

100

Year

sY

6 μA

Y–

WUn

ique

128

-bit

seria

l num

ber s

epar

ate

from

the

main

mem

ory

arra

ySO

IC (S

S), T

SOT

(ST)

, TSS

OP

(X),

UDFN

(MA)

24xx

6464

Kb

× 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

, 10

M20

0 Ye

ars

N1

µAY

–W

, ¼Th

ree

addr

ess

pins

- ca

scad

e up

to e

ight

dev

ices

to s

hare

a

com

mon

2-w

ire b

us, 3

2 by

te p

age

writ

e bu

ffer

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S),

DFN

(MNY

), 5-

SOT-

23 (O

T), W

LCSP

(CS)

24xx

6564

Kb

× 8

1 M

Hz1.

8-6

−40°

C to

+1

25°C

1M,

10M

200

Year

sN

1 µA

–Y

up to

15

4 KB

bl

ks

Thre

e ad

dres

s pi

ns, s

oftw

are

WP,

hig

h en

dura

nce

bloc

k, p

age

size

up to

64

Byte

sPD

IP (P

), SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

NY),

5-SO

T-23

(OT)

, WLC

SP (C

S)

AT24

C64

D64

Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

6 μA

Y–

WTh

ree

addr

ess

pins

, sof

twar

e W

P, h

igh

endu

ranc

e bl

ock,

pag

e siz

e up

to 6

4 By

tes

SOIC

(SS)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

), W

LCSP

(U),

XDFN

(ME)

AT24

CS6

464

Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sY

6 μA

Y–

WUn

ique

128

-bit

seria

l num

ber s

epar

ate

from

the

main

mem

ory

arra

ySO

IC (S

S), T

SSO

P (X

), UD

FN (M

A)

24xx

128

128

Kb×

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M20

0 Ye

ars

N1

µAY

–W

Thre

e ad

dres

s pi

ns -

casc

ade

up to

eig

ht d

evice

s to

sha

re a

com

mon

2-w

ire

bus

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S),

DFN

(MNY

), W

LCSP

(CS)

AT24

C12

8C12

8 Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

6 μA

Y–

WTh

ree

addr

ess

pins

- ca

scad

e up

to e

ight d

evice

s to

sha

re a

com

mon

2-w

ire b

usSO

IC (S

S), T

SSO

P (X

), UD

FN (M

A), U

DFN

(MAP

), VF

BGA

(C),

WLC

SP (U

), XD

FN (M

E)

24xx

256

256

Kb×

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M20

0 Ye

ars

N1

µAY

–W

Thre

e ad

dres

s pi

ns -

casc

ade

up to

eigh

t dev

ices

to s

hare

a c

omm

on 2

-wire

bus

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, SO

IJ (S

M),

MSO

P (M

S), D

FN (M

F), W

LCSP

(CS)

, TDF

N (M

NY)

24xx

256U

ID25

6 Kb

× 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

200

Year

sY

1 µA

Y–

WTh

ree

addr

ess

pins

- ca

scad

e up

to e

ight

dev

ices

to s

hare

a c

omm

on 2

-wire

bu

s, E

UI-4

8, E

UI-6

4 an

d un

ique

ID o

ptio

ns a

vaila

ble

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, SO

IJ (S

M),

MSO

P (M

S), D

FN (M

F), W

LCSP

(CS)

, TDF

N (M

NY)

Focus Product Selector Guide 53

Mem

ory

Prod

ucts

: Ser

ial E

EPR

OM

Bus

Product

Density

Organization

Max. Clock Frequency

Operating Voltage (V)

Temperature Range

E/W Endurance (Minimum)

Data Retention (Minimum)

Factory Programmed Serial Number

Max. Standby Current (@ 85°C)

Hard Pin Protect

Software Protect

Protected Array Size

Special/Unique Features

Packages

I²C

AT24

C25

6C25

6 Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

6 μA

Y–

WTh

ree

addr

ess

pins

- ca

scad

e up

to e

ight d

evice

s to

sha

re a

com

mon

2-w

ire b

usSO

IC (S

S), T

SSO

P (X

), UD

FN (M

A), U

DFN

(MAP

), VF

BGA

(C)

24xx

512

512

Kb×

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M20

0 Ye

ars

N1

µAY

–W

Thre

e ad

dres

s pi

ns -

casc

ade

up to

eigh

t dev

ices

to s

hare

a c

omm

on 2

-wire

bus

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, DFN

(MF)

, SO

IJ (S

M),

WLC

SP (C

S)

AT24

C51

2C51

2 Kb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

40 Y

ears

N6

μAY

–W

Thre

e ad

dres

s pi

ns -

casc

ade

up to

eigh

t dev

ices

to s

hare

a c

omm

on 2

-wire

bus

SOIC

(SS)

, SO

IJ (S

), TS

SOP

(X),

UDFN

(MA)

, VF

BGA

(C),

WLC

SP (U

)

24xx

1025

/26

1 M

b×

81

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M20

0 Ye

ars

N5

µAY

–W

Two

addr

ess

pins

- ca

scad

e up

to fo

ur d

evice

s to

sha

re a

co

mm

on 2

-wire

bus

, 25

and

26 d

iffere

nce

is ad

dres

s pi

nsPD

IP (P

), SO

IC (S

N), S

OIJ

(SM

)

AT24

CM

011

Mb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

40 Y

ears

N6

μAY

–W

Two

addr

ess

pins

- ca

scad

e up

to fo

ur d

evice

s to

sha

re a

com

mon

2-w

ire b

us.

SOIC

(SS)

, SO

IJ (S

), TS

SOP

(X),

WLC

SP (U

)

AT24

CM

022

Mb

x 8

1 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

6 μA

Y–

WTw

o ad

dres

s pi

ns -

casc

ade

up to

four

dev

ices

to s

hare

a c

omm

on 2

-wire

bus

.SO

IC (S

S), W

LCSP

(U)

48LM

011

Mb

x 8

66

MHz

2.7-

3.6

-40°

C to

+8

5°C

oo10

0 Ye

ars

200

µAN

NW

, ½,

¼Un

limite

d en

dura

nce

to S

RAM

, Dat

a au

tom

atica

lly b

acke

d up

to E

EPRO

M a

nd

pow

er d

own

(with

sm

all e

xter

nal c

apac

itor)

SOIJ

(SM

)

SPI

25xx

010A

1 Kb

× 8

10

MHz

1.8–

5.5

−40°

C to

+1

50°C

1M20

0 Ye

ars

N1

µAY

YW

, ½,

¼5

MHz

@ 2

.5V,

Sta

tus

regi

ster

, 16

byte

pag

ePD

IP (P

), SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

NY),

6-SO

T-23

(OT)

AT25

010B

1 Kb

× 8

20

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

N3.

5 μA

YY

W, ½

, ¼

Supp

orts

SPI

Mod

es 0

(0, 0

) and

3 (1

, 1)

SOIC

(SS)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

)

25xx

020A

2 Kb

× 8

10

MHz

1.8–

5.5

−40°

C to

+1

50°C

1M20

0 Ye

ars

N1

µAY

YW

, ½,

¼5

MHz

@ 2

.5V,

Sta

tus

regi

ster

, 16

byte

pag

e, U

niqu

e EU

I-48/

EUI-6

4 M

AC

addr

ess

and

uniq

ue ID

opt

ions

ava

ilabl

ePD

IP (P

), SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

NY),

6-SO

T-23

(OT)

25xx

020E

48/ E

64/

UID

2 Kb

× 8

10

MHz

1.8–

5.5

−40°

C to

+1

50°C

1M20

0 Ye

ars

Y1

µAY

YW

, ½,

¼5

MHz

@ 2

.5V,

Sta

tus

regi

ster

, 16

byte

pag

e, U

niqu

e EU

I-48/

EUI-6

4 M

AC

addr

ess

and

uniq

ue ID

opt

ions

ava

ilabl

ePD

IP (P

), SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

NY),

6-SO

T-23

(OT)

AT25

020B

2 Kb

× 8

20

MHz

1.7–

5.5

-40°

C to

+1

25°C

1M10

0 Ye

ars

N3.

5 μA

YY

W, ½

, ¼

Supp

orts

SPI

Mod

es 0

(0,0

) and

3 (1

,1)

SOIC

(SS)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP)

25xx

040A

4 Kb

× 8

10

MHz

1.8–

5.5

−40°

C to

+1

50°C

1M20

0 Ye

ars

N1

µAY

YW

, ½,

¼5

MHz

@ 2

.5V,

Sta

tus

regi

ster

, 16

byte

pag

ePD

IP (P

), SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

NY),

6-SO

T-23

(OT)

AT25

040B

4 Kb

× 8

20

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

N3.

5 μA

YY

W, ½

, ¼

Supp

orts

SPI

Mod

es 0

(0,0

) and

3 (1

,1)

SOIC

(SS)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

)

25xx

080C

/D8

Kb×

810

M

Hz1.

8–5.

5−4

0°C

to

+150

°C1M

200

Year

sN

1 µA

YY

W, ½

, ¼

16/3

2 by

te p

age,

5 M

Hz @

2.5

V, S

tatu

s re

gist

erPD

IP (P

), SO

IC (S

N), T

SSO

P (S

T), M

SOP

(MS)

, DF

N (M

NY)

AT25

080B

8 Kb

× 8

5 M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

13 μ

AY

YW

, ½,

¼Su

ppor

ts S

PI M

odes

0 (0

,0) a

nd 3

(1,1

)SO

IC (S

S), T

SSO

P (X

), UD

FN (M

A), U

DFN

(MAP

), VF

BGA

(C),

WLC

SP (U

), XD

FN (M

E)

25xx

160C

/D16

Kb

× 8

10

MHz

1.8–

5.5

−40°

C to

+1

50°C

1M20

0 Ye

ars

N1

µAY

YW

, ½,

¼16

/32

byte

pag

e, 5

MHz

@ 2

.5V,

Sta

tus

regi

ster

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S),

DFN

(MNY

)

AT25

160B

16

Kb×

85

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

N13

μA

YY

W, ½

, ¼

Supp

orts

SPI

Mod

es 0

(0,0

) and

3 (1

,1)

SOIC

(SS)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

), XD

FN (M

E)

25xx

320A

32

Kb×

810

M

Hz1.

8–5.

5−4

0°C

to

+150

°C1M

200

Year

sN

1 µA

YY

W, ½

, ¼

5 M

Hz @

2.5

V, S

tatu

s re

gist

er, 3

2 by

te p

age

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S),

DFN

(MNY

)

AT25

320B

32

Kb×

85

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

N13

μA

YY

W, ½

, ¼

Supp

orts

SPI

Mod

es 0

(0,0

) and

3 (1

,1)

SOIC

(SS)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

), XD

FN (M

E)

25xx

640A

64

Kb×

810

M

Hz1.

8–5.

5−4

0°C

to

+150

°C1M

200

Year

sN

1 µA

YY

W, ½

, ¼

5 M

Hz @

2.5

V, S

tatu

s re

gist

er, 3

2 by

te p

age

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, MSO

P (M

S),

DFN

(MNY

, MF)

AT25

640B

64

Kb×

85

MHz

1.7–

5.5

−40°

C to

+1

25°C

1M10

0 Ye

ars

N13

μA

YY

W, ½

, ¼

Supp

orts

SPI

Mod

es 0

(0,0

) and

3 (1

,1)

SOIC

(SS)

, TSS

OP

(X),

UDFN

(MA)

, UDF

N (M

AP),

VFBG

A (C

), XD

FN (M

E)

25xx

128

128

Kb×

810

M

Hz1.

8–5.

5−4

0°C

to

+150

°C1M

200

Year

sN

1 µA

YY

W, ½

, ¼

5 M

Hz @

2.5

V, S

tatu

s re

gist

er, 6

4 by

te p

age

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, DFN

(MF)

AT25

128B

128

Kb×

820

M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

5.0

μAY

YW

, ½,

¼Su

ppor

ts S

PI M

odes

0 (0

,0) a

nd 3

(1,1

)SO

IC (S

S), T

SSO

P (X

), UD

FN (M

A), U

DFN

(MAP

), VF

BGA

(C)

25xx

256

256

Kb×

810

M

Hz1.

8–5.

5−4

0°C

to

+150

°C1M

200

Year

sN

1 µA

YY

W, ½

, ¼

5 M

Hz @

2.5

V, S

tatu

s re

gist

er, 6

4 by

te p

age

PDIP

(P),

SOIC

(SN)

, TSS

OP

(ST)

, DFN

(MF)

, SO

IJ (S

M)

AT25

256B

256

Kb×

820

M

Hz1.

7–5.

5−4

0°C

to

+125

°C1M

100

Year

sN

5.0

μAY

YW

, ½,

¼Su

ppor

ts S

PI M

odes

0 (0

,0) a

nd 3

(1,1

)SO

IC (S

S), S

OIJ

(S),

TSSO

P (X

), UD

FN (M

A),

UDFN

(MAP

), VF

BGA

(C)

www.microchip.com54

Mem

ory

Prod

ucts

: Ser

ial E

EPR

OM

Bus

Product

Density

Organization

Max. Clock Frequency

Operating Voltage (V)

Temperature Range

E/W Endurance (Minimum)

Data Retention (Minimum)

Factory Programmed Serial Number

Max. Standby Current (@ 85°C)

Hard Pin Protect

Software Protect

Protected Array Size

Special/Unique Features

Packages

SPI

25xx

512

512

Kb×

820

M

Hz1.

8–5.

5−4

0°C

to

+125

°C1M

200

Year

sN

10 µ

AY

YW

, ½,

¼10

MHz

@ 2

.5V,

Dee

p po

wer

dow

n, S

tatu

s re

gist

er, P

age/

sect

or/c

hip

eras

ePD

IP (P

), SO

IC (S

N), D

FN (M

F), S

OIJ

(SM

)

AT25

512

512

Kb×

820

M

Hz1.

8–5.

5−4

0°C

to

+85°

C1M

40 Y

ears

N5.

0 μA

YY

W, ½

, ¼

Supp

orts

SPI

Mod

es 0

(0,0

) and

3 (1

,1)

SOIC

(S),

TSSO

P (T

), UD

FN (Y

)

25xx

1024

1 M

b×

820

M

Hz1.

8–5.

5−4

0°C

to

+125

°C1M

200

Year

sN

12 µ

AY

YW

, ½,

¼10

MHz

@ 2

.5V,

Dee

p po

wer

dow

n, S

tatu

s re

gist

er, P

age/

sect

or/c

hip

eras

ePD

IP (P

), DF

N (M

F), S

OIJ

(SM

)

AT25

M01

1 M

b×

820

M

Hz1.

7–5.

5−4

0°C

to

+85°

C1M

100

Year

sN

5.0

μAY

YW

, ½,

¼Su

ppor

ts S

PI M

odes

0 (0

,0) a

nd 3

(1,1

)SO

IC (S

S), S

OIJ

(S),

UDFN

(MF)

, WLC

SP (U

)

AT25

M02

2 M

b×

85

MHz

1.7–

5.5

−40°

C to

+8

5°C

1M40

Yea

rsN

3.0

μAY

YW

, ½,

¼Su

ppor

ts S

PI M

odes

0 (0

,0) a

nd 3

(1,1

)SO

IC (S

S), W

LCSP

(U)

Mem

ory

Prod

ucts

: Ser

ial R

AM

Bus

Product

Density

Organization

Max. Clock Frequency

Operating Voltage (V)

Temperature Range (°C)

E/W Endurance (Minimum)

Data Retention (Minimum)

Max. Standby Current (85°C)

Hard Pin Protect

Software Protect

Protected Array Size

Special/ Unique Features

Packages

Seria

l SR

AM

SPI

23x6

4064

Kb

× 8

20 M

Hz1.

5–1.

95,

2.7–

3.6

−40

to +

125

∞Vo

latile

4 µA

––

–Ze

ro w

rite

cycle

tim

e, In

finite

end

uran

ce, V

olat

ile R

AM,

Byte

/pag

e/se

quen

tial r

ead-

writ

e m

odes

PDIP

(P),

SOIC

(SN)

, TS

SOP

(ST)

23x2

5625

6 Kb

× 8

20 M

Hz1.

5–1.

95,

2.7–

3.6

−40

to +

125

∞Vo

latile

4 µA

––

–Ze

ro w

rite

cycle

tim

e, In

finite

end

uran

ce, V

olat

ile R

AM,

Byte

/pag

e/se

quen

tial r

ead-

writ

e m

odes

PDIP

(P),

SOIC

(SN)

, TS

SOP

(ST)

23xx

512

512

Kb×

820

MHz

1.7–

2.2,

2.

5–5.

5−4

0 to

+12

5∞

Volat

ile4

µA–

––

Fast

Spe

ed: Q

uad

SPI a

vaila

ble

(80

MHz

), In

finite

end

uran

ce,

Zero

writ

e tim

es, 5

V ca

pabl

eSO

IC (S

N), P

DIP

(P),

TSSO

P (S

T)

23xx

1024

1024

Kb

× 8

20 M

Hz1.

7–2.

2,

2.5–

5.5

−40

to +

125

∞Vo

latile

4 µA

––

–Fa

st S

peed

: Qua

d SP

I ava

ilabl

e (8

0 M

Hz),

Infin

ite e

ndur

ance

, Ze

ro w

rite

times

, 5V

capa

ble

SOIC

(SN)

, PDI

P (P

), TS

SOP

(ST)

Seria

l NVS

RAM

SPI

23LC

V512

512

Kb×

820

MHz

2.5–

5.5

−40

to +

85∞

20 Y

ears

via

batte

ry4

µA–

––

Batte

ry-b

acke

d no

n-vo

latile

SRA

M, I

nfini

te e

ndur

ance

, Zer

o w

rite

times

SOIC

(SN)

, PDI

P (P

), TS

SOP

(ST)

23LC

V102

410

24 K

b×

820

MHz

2.5–

5.5

−40

to +

85∞

20 Y

ears

via

batte

ry4

µA–

––

Batte

ry b

acke

d no

n-vo

latile

SRA

M, I

nfini

te e

ndur

ance

, Zer

o w

rite

times

SOIC

(SN)

, PDI

P (P

), TS

SOP

(ST)

Seria

l EER

AM

I²C

47x0

44

Kb×

81

MHz

2.7–

3.6,

4.

5–5.

5−4

0 to

+12

5∞

200

Year

s40

µA

–Y

W to

1/6

4Un

limite

d en

dura

nce

to S

RAM

, Dat

a au

tom

atica

lly b

acke

d up

to E

EPRO

M a

nd

pow

er d

own

(with

sm

all e

xter

nal c

apac

itor)

SOIC

(SN)

, PDI

P (P

), TS

SOP

(ST)

47x1

616

Kb

× 8

1 M

Hz2.

7–3.

6,

4.5–

5.5

−40

to +

125

∞20

0 Ye

ars

40 µ

A–

YW

to 1

/64

Unlim

ited

endu

ranc

e to

SRA

M, D

ata

auto

mat

ically

bac

ked

up to

EEP

ROM

and

at

pow

er d

own

(with

sm

all e

xten

al ca

pacit

or)

SOIC

(SN)

, PDI

P (P

), TS

SOP

(ST)

SPI

47L6

464

Kb

x 8

1 M

Hz2.

7-3.

6-4

0°C

to +

85°C

oo10

0 Ye

ars

200

µAY

N¼

Unlim

ited

endu

ranc

e to

SRA

M, D

ata

auto

mat

ically

bac

ked

up to

EEP

ROM

and

po

wer

dow

n (w

ith s

mall

ext

erna

l cap

acito

r)SO

IC (S

N), T

DFN

(MNY

)

48L6

4064

Kb

x 8

66 M

Hz2.

7-3.

6-4

0°C

to +

85°C

oo10

0 Ye

ars

200

µAN

NW

, ½, ¼

Unlim

ited

endu

ranc

e to

SRA

M, D

ata

auto

mat

ically

bac

ked

up to

EEP

ROM

and

po

wer

dow

n (w

ith s

mall

ext

erna

l cap

acito

r)SO

IC (S

N), T

DFN

(MNY

)

48L2

5625

6 Kb

x 8

66 M

Hz2.

7-3.

6-4

0°C

to +

85°C

oo10

0 Ye

ars

300

µAN

NW

, ½, ¼

Unlim

ited

endu

ranc

e to

SRA

M, D

ata

auto

mat

ically

bac

ked

up to

EEP

ROM

and

po

wer

dow

n (w

ith s

mall

ext

erna

l cap

acito

r)SO

IC (S

N)

48L5

1251

2 Kb

x 8

66 M

Hz2.

7-3.

6-4

0°C

to +

85°C

oo10

0 Ye

ars

200

µAN

NW

, ½, ¼

Unlim

ited

endu

ranc

e to

SRA

M, D

ata

auto

mat

ically

bac

ked

up to

EEP

ROM

and

po

wer

dow

n (w

ith s

mall

ext

erna

l cap

acito

r)SO

IC (S

N)

48LM

011

Mb

x 8

66 M

Hz2.

7-3.

6-4

0°C

to +

85°C

oo10

0 Ye

ars

200

µAN

NW

, ½, ¼

Unlim

ited

endu

ranc

e to

SRA

M, D

ata

auto

mat

ically

bac

ked

up to

EEP

ROM

and

po

wer

dow

n (w

ith s

mall

ext

erna

l cap

acito

r)SO

IJ (S

M)

Focus Product Selector Guide 55

Wire

less

Pro

duct

s: W

i-Fi®

Mod

ules

Prod

uct

Rad

io

Pin Count

Antenna

Frequency Range (GHz)

Sensitivity (dBm)

Power Output (dBm)

Tx Power Consumption (mA)

Rx Power Consumption (mA)

Test

ed T

hrou

ghpu

t M

bps

Encryption/Security

Interface

Packages (Dimensions)

Downlink

Uplink

ATSA

MW

2580

2.11

b/g

/n51

Chip

, PCB

, U.F

L2.

412–

2.47

2−9

817

264

61TC

P: 1

0 UD

P: 1

5TC

P: 8

UD

P: 1

1W

EP, W

PA/W

PA2

Pers

onal

and

Ente

rpris

e, T

LSSP

I51

/Mod

ule

(3

3.9

x 14

.9 m

m)

ATW

INC

15x0

802.

11 b

/g/n

28Ch

ip, P

CB, U

.FL

2.41

2–2.

472

−89

1726

461

TCP:

11

UDP:

19

TCP:

10

UDP:

12

WEP

, WPA

/WPA

2 Pe

rson

al an

d En

terp

rise,

TLS

SPI

28/M

odul

e

(21.

7 x

14.7

mm

)

ATW

INC

3400

-MR

802.

11 b

/g/n

and

BLE

36Ch

ip2.

412–

2.48

4−9

64

(BLE

), 14

(W

i-Fi®

)35

0 (W

i-Fi)

92 (W

i-Fi),

45 (B

LE)

TCP:

3

UDP:

6TC

P: 5

UD

P: 5

WEP

, WPA

/WPA

2 Pe

rson

alSP

I, UA

RT37

/Mod

ule

(2

2.4

x 14

.7 m

m)

ATW

ILC

1000

-MR

802.

11 b

/g/n

28PC

B2.

412–

2.48

4−9

615

289

52.5

Linu

x®

TCP:

26

UDP:

46

Linu

xTC

P: 2

0

UDP:

25

WEP

, WPA

/WPA

2 Pe

rson

al an

d En

terp

rise,

TLS

(Lin

ux)

WEP

, WPA

/WPA

2 Pe

rson

al an

d En

terp

rise

(RTO

S)SP

I, SD

IO29

/Mod

ule

(2

1.5

x 14

.5 m

m)

ATW

ILC

3000

-MR

802.

11 b

/g/n

and

BLE

36Ch

ip2.

412–

2.48

4−9

64

(BLE

), 14

(W

i-Fi)

295

(Wi-F

i), 11

0 (B

LE)

86 (W

i-Fi),

45 (B

LE)

Linu

xTC

P: 2

8 UD

P: 1

6

Linu

xTC

P: 2

0 UD

P: 2

4

WEP

, WPA

/WPA

2 Pe

rson

al an

d En

terp

rise,

TLS

(Lin

ux)

WEP

, WPA

/WPA

2 Pe

rson

al (R

TOS)

SPI,

SDIO

, UA

RT37

/Mod

ule

(2

2.4

x 14

.7 m

m)

Wire

less

Pro

duct

s: IE

EE 8

02.1

5.4

Tran

scei

vers

/Mod

ules

Product

Pin Count

Antenna

Frequency Range (GHz)

Sensitivity (dBm)

Power Output (dBm)

RSSI

Tx Power Consumption (mA)

Rx Power Consumption (mA)

Clock (MHz)

Sleep

MAC

MAC Features

Protocols

Encryption

Interface

Packages (Dimensions)

AT86

RF21

548

–.3

895

–2.4

83–1

23+1

4.5

Yes

6228

26.0

3 m

AYe

s–

zigbe

e®, M

iWi™

wire

less

netw

orkin

g pr

otoc

ol–

I/Q48

QFN

AT86

RF23

332

–2.

4–1

014

Yes

13.8

11.8

16.0

2 m

AYe

sCS

MA-

CAzig

bee,

MiW

i wire

less

netw

orkin

g pr

otoc

olAE

S128

SPI

32 Q

FNAT

86RF

212B

32–

.769

–.9

30–1

1011

Yes

189.

216

.2 m

AYe

sCS

MA-

CAzig

bee,

MiW

i wire

less

netw

orkin

g pr

otoc

olAE

S128

SPI

32 Q

FNM

R.F2

4J40

40–

2.40

5–2.

48−9

50

Yes

2319

202

µAYe

sCS

MA-

CAzig

bee,

MiW

i wire

less

netw

orkin

g pr

otoc

olAE

S128

4-w

ire S

PI40

/QFN

MRF

24J4

0MA

12PC

B2.

405–

2.48

−94

0Ye

s23

1920

2 µA

Yes

CSM

A-CA

zigbe

e, M

iWi w

ireles

s ne

twor

king

prot

ocol

AES1

284-

wire

SPI

12/M

odul

e (1

7.8

× 27

.9 m

m)

MRF

24J4

0MD

12PC

B2.

405–

2.48

−104

+19

Yes

140

3220

10 µ

AYe

sCS

MA-

CAzig

bee,

MiW

i wire

less

netw

orkin

g pr

otoc

olAE

S128

4-w

ire S

PI12

/Mod

ule

(17.

8 ×

27.9

mm

)M

RF24

J40M

E12

U.FL

2.40

5–2.

48−1

04+1

9Ye

s14

032

2010

µA

Yes

CSM

A-CA

zigbe

e, M

iWi w

ireles

s ne

twor

king

prot

ocol

AES1

284-

wire

SPI

12/M

odul

e (1

7.8

× 27

.9 m

m)

1. I

ndica

tes

off c

urre

nt fo

r slee

p co

lum

n. 2

. Su

ppor

ted

in th

e pr

ovid

ed s

tack

.

Wire

less

Pro

duct

s: B

luet

ooth

®

Product

Functionality

No Shield Option

Rx Sensitivity (dBm)

Power Output (dBm) (typ.)

Sleep

Profiles

Interface

Pin Count

Packages (Dimensions)

RN40

20Da

ta, S

ingl

e-M

ode

BLE

No−9

2.5

7Do

rman

t < 7

00 n

A,

deep

slee

p <

5.0

μAG

AP, G

ATT,

SM

, L2C

AP,

inte

grat

ed p

ublic

pro

files

UART

, PIO

, AIO

, SPI

24M

odul

e

11.5

× 1

9.5

mm

BM70

Data

, Sin

gle-

Mod

e BL

EYe

s−9

00

Pow

er S

avin

g 1

μAG

AP, G

ATT,

SM

, L2C

AP,

Inte

grat

ed p

ublic

pro

files

UART

, I² C

, SPI

, ADC

, PW

M, G

PIO

s33

Mod

ule

22

× 1

2 ×

2.4

mm

15

× 1

2 ×

1.8

mm

BM71

Data

, Sin

gle-

Mod

e BL

EYe

s−9

00

Pow

er S

avin

g 1

μAG

AP, G

ATT,

SM

, L2C

AP,

Inte

grat

ed p

ublic

pro

files

UART

, I² C

, SPI

, ADC

, PW

M, G

PIO

s17

Mod

ule

9

× 11

.5 ×

2.1

mm

6

× 8

× 1.

6 m

m

BM78

Data

, Dua

l-Mod

eYe

s−9

0 (B

R/ED

R)

−92

LE2

Deep

Pow

er D

own

130

μA

GAP

, SPP

, SDP

, RFC

OM

M, L

2CAP

G

AP, G

ATT,

ATT

, SM

P, L

2CAP

UART

, I² C

, GPI

Os

33M

odul

e

22 ×

12

× 2.

4 m

m

15 ×

12

× 1.

8 m

m

RN46

78Da

ta, D

ual-M

ode

Yes

−90

(BR/

EDR)

−9

2 LE

2De

ep P

ower

Dow

n 13

0 μA

GAP

, SPP

, SDP

, RFC

OM

M, L

2CAP

G

AP, G

ATT,

ATT

, SM

P, L

2CAP

UART

, I² C

, GPI

Os

33M

odul

e

22 ×

12

× 2.

4 m

m

15 ×

12

× 1.

8 m

m

BM20

Audi

oYe

s−9

14

Syst

em O

ff 2

μAHF

P, H

SP, A

2DP,

AVR

CP, S

PP, P

CAP

Analo

g au

dio

out,

mic

in, l

ine

in, U

ART

40M

odul

e

29 ×

15

× 2.

5 m

m

www.microchip.com56

Wire

less

Pro

duct

s: B

luet

ooth

®

Product

Functionality

No Shield Option

Rx Sensitivity (dBm)

Power Output (dBm) (typ.)

Sleep

Profiles

Interface

Pin Count

Packages (Dimensions)

BM23

Audi

oYe

s−9

14

Syst

em O

ff 2

μAHF

P, H

SP, A

2DP,

AVR

CP, S

PP, P

CAP

I2 S D

igita

l aud

io o

ut, m

ic in

, lin

e in

, UAR

T43

Mod

ule

29

× 1

5 ×

2.5

mm

BM62

Audi

oYe

s−9

0+2

(Clas

s 2)

Syst

em <

10

μAHF

P, A

VRCP

, A2D

P, H

SP, S

PPUA

RT37

Mod

ule

29

x 1

5 x

2.5

mm

BM83

Audi

o (B

BC, A

AC, L

DAC)

No−9

08.

5 dB

m

(Clas

s 1)

Syst

em <

10

μAHF

P, H

SP, A

2DP,

AVR

CP, S

PP, P

CAP,

M

AP, D

IS, A

NO5

Line

in, m

ic in

, ADC

, IS,

I²C,

UAR

T, U

SB,

GPI

Os

50M

odul

e

32 x

15

mm

BM64

Audi

oYe

s−9

0+1

5 (C

lass

1),

+2 (C

lass

2)Sy

stem

< 1

0 μA

HFP,

AVR

CP, A

2DP,

HSP

, SPP

UART

43M

odul

e

32 x

15

x 2.

5 m

m

Wire

less

Pro

duct

s: B

luet

ooth

ICs

IS20

62Au

dio

Yes

−90

+2 (C

lass

2)Sy

stem

< 2

0 μA

HFP,

AVR

CP, A

2DP,

HSP

, SPP

UART

56LG

A (7

x 7

mm

) IS

2063

Audi

o−9

0+2

(Clas

s 2)

Syst

em <

20

μAHF

P, A

VRCP

, A2D

P, H

SP, S

PPUA

RT82

BGA

(5 x

5 m

m)

IS20

64Au

dio

Yes

−90

+15

(Clas

s 1)

, +2

(Clas

s 2)

Syst

em <

20

μAHF

P, A

VRCP

, A2D

P, H

SP, S

PPUA

RT68

, 61

68 L

GA

(8 x

8 x

1.0

mm

), 68

QFN

(8 x

8 x

0.9

m

m),

61 B

GA

(5 x

5 x

0.9

mm

) IS

2066

Audi

o (S

BC, A

AC)

−90

+2 (C

lass

2)–

HFP,

AVR

CP, A

2DP,

HSP

, SPP

mic

in, a

nalo

g ou

t, DA

C50

BGA

(5 x

3.5

mm

)

IS20

21S

Audi

oNo

−90

4Sh

owdo

wn

< 1

μAAu

dio:

HFP

, HSP

, A2D

P, A

VRCP

, SPP

, PB

APUA

RT48

, 56,

68

5 ×

6.5

mm

48

QFN

(IS2

021S

) 7

× 7

mm

56

QFN

(IS2

020S

, IS2

023S

) 8

× 8

mm

68

QFN

(IS2

025S

)

Wire

less

Pro

duct

s: S

ub-G

Hz

Tran

scei

vers

/Mod

ules

Prod

uct

Pin

Cou

ntFr

eque

ncy

Ran

ge (M

Hz)

Sens

itivi

ty

(dBm

)Po

wer

Out

put

(dBm

)R

SSI

TX P

ower

C

onsu

mpt

ion

(mA)

RX

Pow

er

Con

sum

ptio

n (m

A)C

lock

Slee

pIn

terf

ace

Pack

ages

MRF

89XA

M8A

12

868

−113

12.5

Yes

25 m

A @

+10

dBm

312

.8 M

Hz0.

1 µA

4-w

ire S

PI12

/Mod

ule

(17.

8 ×

27.9

mm

)M

RF89

XAM

9A

1291

5−1

1312

.5Ye

s25

mA

@ +

10 d

Bm3

12.8

MHz

0.1

µA4-

wire

SPI

12/M

odul

e (1

7.8

× 27

.9 m

m)

MRF

89XA

32

868/

915/

950

−113

12.5

Yes

25 m

A @

+10

dBm

312

.8 M

Hz0.

1 µA

4-w

ire S

PI32

-pin

TQ

FNAT

SAM

R30

32/4

877

9/93

0up

to −

110

11Ye

s18

.2 m

A @

5 d

Bm9.

448

MHz

0.45

SPI,

USAR

T, I² C

, LIN

(5 ×

5 m

m) 3

2-pi

n Q

FN, (

7 ×

7 m

m) 4

8-pi

n Q

FNAT

SAM

R30M

32/4

877

9/93

0up

to −

105

8.7

Yes

18.7

mA

@ 5

dBm

9.4

48 M

Hz0.

45SP

I, US

ART,

I² C, L

IN(1

1 ×

127

mm

) Mod

ule

Wire

less

Pro

duct

s: S

ub-G

Hz

Tran

smitt

ers

Prod

uct

Pin

Cou

ntFr

eque

ncy

Ran

ge (M

Hz)

Mod

ulat

ion

Dat

a R

ate

(Kbp

s)Tx

Pow

er (d

Bm)

Ope

ratin

g Vo

ltage

(V)

Pack

ages

MIC

RF11

46

285–

445

OO

K11

5.2

(NRZ

), 57

.6 (M

anch

este

r Enc

oded

)10

1.8–

3.6

6-pi

n SO

T-23

MIC

RF11

36

300–

450

ASK

2010

1.8–

3.6

6-pi

n SO

T-23

MIC

RF11

210

300–

450

ASK/

FSK

50 (A

SK),

10 (F

SK)

101.

8–3.

610

-pin

MSO

P, 1

0-pi

n DF

N

Wire

less

Pro

duct

s: S

ub-G

Hz

Rec

eive

rs

Prod

uct

Pin

Cou

ntFr

eque

ncy

Ran

ge (M

Hz)

Sens

itivi

ty

(dBm

)Po

wer

Out

put

(dBm

)R

SSI

Mod

ulat

ion

RX

Pow

er

Con

sum

ptio

n (m

A)Sl

eep

Inte

rfac

ePa

ckag

es

MIC

RF21

9A16

300–

450

−110

–Ye

sAS

K/O

OK

4.3

––

16-p

in Q

SOP

MIC

RF22

016

300–

450

−110

–Ye

sAS

K/O

OK

4.3

––

16-p

in Q

SOP

MIC

RF22

116

850–

950

−109

–Ye

sAS

K/O

OK

9–

–16

-pin

QSO

PM

ICRF

229

1640

0–45

0−1

12–

Yes

ASK/

OO

K6

––

16-p

in Q

SOP

MIC

RF23

016

400–

450

−112

–Ye

sAS

K/O

OK

6–

–16

-pin

QSO

P

Wire

less

Pro

duct

s: L

oRa®

Tec

hnol

ogy

Mod

ems

Prod

uct

Pin

Cou

ntFr

eque

ncy

Ran

ge (M

Hz)

Sens

itivi

ty

(dBm

)Po

wer

Out

put

(dBm

)R

SSI

TX P

ower

C

onsu

mpt

ion

(mA)

RX

Pow

er

Con

sum

ptio

n (m

A)Sl

eep

Inte

rfac

ePa

ckag

es

RN24

8347

433/

868

−148

14N/

A40

mA

@ +

14 d

Bm (8

68 M

Hz)

14.2

1 µA

UART

47/M

odul

e (1

7.8

× 26

.7 ×

3 m

m)

RN29

0347

915

−146

18.5

N/A

124

mA

@ +

18.5

dBm

13.5

2 µA

UART

47/M

odul

e (1

7.8

× 26

.7 ×

3 m

m)

Focus Product Selector Guide 57

USB

Pro

duct

s

Prod

uct

Des

crip

tion

Proc

esso

r Int

erfa

ce#

of D

owns

trea

m P

orts

Car

d Fo

rmat

sIn

dust

rial V

ersi

onPa

ckag

es

USB

2.0

Hub

s/C

ontr

olle

rs

USB

2412

Hi-S

peed

USB

2.0

2-P

ort H

ubUS

B 2.

02

––

28-p

in Q

FNU

SB24

22Sm

all-fo

otpr

int,

2-Po

rt Va

lue

Hub,

Com

mer

cial a

nd In

dust

rial T

empe

ratu

re w

ith U

SB B

atte

ry C

harg

ing

1.1

USB

2.0

2–

ü24

-pin

QFN

USB

251X

B/U

SB25

17Hi

-Spe

ed U

SB 2

.0 H

ub w

ith B

atte

ry C

harg

er D

etec

tion

USB

2.0

2, 3

, 4, 7

por

t opt

ions

–ü

36- o

r 64-

pin

QFN

USB

2524

4-Po

rt Hi

-Spe

ed U

SB 2

.0 M

ulti-

Switc

h Hu

bUS

B 2.

0 ×

24

––

56-p

in Q

FNU

SB35

033-

Port

Hi-S

peed

USB

2.0

HSI

C Hu

b fo

r Mob

ile A

pplic

atio

nsHS

IC3

–ü

25-b

all W

LCSP

USB

3803

3-Po

rt Hi

-Spe

ed U

SB 2

.0 H

ub fo

r Mob

ile A

pplic

atio

nsUS

B 2.

03

–ü

25-b

all W

LCSP

USB

3X13

3-Po

rt Hi

-Spe

ed U

SB 2

.0 S

mar

tHub

for M

obile

App

licat

ions

USB

2.0

or H

SIC

3 (U

SB 2

.0 ×

2/HS

IC ×

1)–

ü30

-ball

WLC

SPU

SB25

3XUS

B2.0

Hi-S

peed

Sm

artH

ub w

ith B

atte

ry C

harg

ing

Dete

ctio

nUS

B 2.

02,

3, 4

por

t opt

ions

–ü

36-p

in Q

FN

USB

46X4

Hi-S

peed

USB

2.0

Con

trolle

r Hub

with

USB

and

HSI

C In

terfa

ces

USB

2.0

or H

SIC

4 (U

SB 2

.0 ×

4 or

US

B 2.

0 ×2

/HSI

C ×2

)–

ü

Auto

mot

ive48

-pin

QFN

USB

8460

XAu

tom

otive

Sm

artH

ub, H

ost/D

evice

Sw

itchi

ng, U

SB/H

SIC

inte

rface

sUS

B 2.

02

or 4

por

ts–

Auto

mot

ive o

nly

48-p

in Q

FNU

SB49

1XAu

tom

otive

Sm

artH

ub, M

ulti-

Host

End

poin

t Refl

ecto

rUS

B 2.

03

or 5

por

ts–

Auto

mot

ive o

nly

48- o

r 64-

pin

QFN

USB

4715

Smar

tHub

, Flex

Conn

ect o

n all

por

tsUS

B 2.

04

ports

–ü

Au

tom

otive

48-p

in Q

FN

USB

492X

Auto

mot

ive S

mar

tHub

, Dua

l Ups

tream

arc

hite

ctur

eUS

B 2.

03

or 5

por

ts–

Auto

mot

ive o

nly

48- o

r 64-

pin

QFN

USB

3.x

Hub

s/C

ontr

olle

rs

USB

553X

BSu

perS

peed

Hub

with

Bat

tery

Cha

rger

Det

ectio

nUS

B 3.

02,

3, 4

or 7

por

t opt

ions

––

64- o

r 72-

pin

QFN

USB

5734

Supe

rSpe

ed S

mar

tHub

with

I/O

Brid

ging

and

Flex

Conn

ect

USB

3.1

Gen

14

–ü

64-p

in Q

FNU

SB57

4XSu

perS

peed

Sm

artH

ub w

ith F

lexCo

nnec

tUS

B 3.

1 G

en 1

2 or

4 p

ort o

ptio

ns–

ü56

-pin

QFN

USB

58XX

CSu

perS

peed

Sm

artH

ub w

ith I/

O B

ridgi

ng a

nd F

lexCo

nnec

t with

USB

-C™

sup

port

dow

nstre

amUS

B 3.

1 G

en 1

6 or

7 p

ort o

ptio

ns–

ü10

0-pi

n Q

FNU

SB59

XXC

Supe

rSpe

ed S

mar

tHub

with

I/O

Brid

ging

and

Flex

Conn

ect w

ith U

SB-C

sup

port

upst

ream

and

dow

nstre

amUS

B 3.

1 G

en 1

6–

ü10

0-pi

n Q

FN

USB

7002

Supe

rSpe

ed U

SB 3

.1 G

en 1

Sm

artH

ub w

ith P

ower

Deli

very

and

Typ

e C

Supp

ort

USB

3.1

Gen

14

–ü

Au

tom

otive

100-

pin

QFN

USB

705X

Supe

rSpe

ed U

SB 3

.1 G

en1

Smar

tHub

with

Pow

er D

elive

ry a

nd T

ype

C Su

ppor

tUS

B 3.

1 G

en 1

4, 6

–ü

100-

pin

QFN

USB

72XX

Supe

rSpe

ed P

lus

USB3

.1 G

en2

Smar

tHub

and

Typ

e C

supp

ort

USB

3.1

Gen

24,

6–

ü10

0-pi

n Q

FN

USB

Pro

duct

s

Prod

uct

Des

crip

tion

Proc

esso

r Int

erfa

ce#

of D

owns

trea

m P

orts

Car

d Fo

rmat

sIn

dust

rial V

ersi

onPa

ckag

es

USB

-C™

Pow

er a

nd C

harg

ing

UTC

200X

USB-

C Co

ntro

ller

I/O1

DFP

or 1

UFP

–ü

Au

tom

otive

16-p

in Q

FN

USB

Tra

nsce

iver

s/Sw

itche

s

USB

333X

Mob

ile H

i-Spe

ed U

SB 2

.0 T

rans

ceive

r with

Mul

ti-fre

quen

cy S

uppo

rtUL

PI–

–ü

25-b

all W

LCSP

USB

334X

Hi-S

peed

USB

2.0

Tra

nsce

iver w

ith M

ulti-

frequ

ency

Sup

port

ULPI

––

Auto

mot

ive24

- or 3

2-pi

n Q

FNU

SB33

00Hi

-Spe

ed U

SB 2

.0 T

rans

ceive

r (24

MHz

refe

renc

e clo

ck s

uppo

rt)UL

PI–

–ü

32-p

in Q

FNU

SB37

40B

Hi-S

peed

USB

2.0

Sw

itch

with

Ext

rem

ely L

ow P

ower

USB

2.0

––

ü10

-pin

QFN

USB

375X

A-X

Hi-S

peed

USB

2.0

Por

t Pro

tect

ion

with

Sw

itch

and

Char

ger D

etec

tion

USB

2.0

––

ü16

-pin

QFN

USB

Fla

sh M

edia

Con

trol

lers

USB

224X

Hi-S

peed

USB

2.0

Mul

ti-Fo

rmat

Flas

h M

edia

Cont

rolle

rUS

B 2.

0–

SD™

/MM

C/eM

MC™

/MS/

xDü

36-p

in Q

FNU

SB22

5XHi

-Spe

ed U

SB 2

.0 M

ulti-

Form

at F

lash

Med

ia Co

ntro

ller

USB

2.0

–SD

/MM

C/eM

MC/

MS/

xD/C

Fü

128-

pin

VTQ

FP

USB

264X

Hi-S

peed

USB

2.0

Mul

ti-Fo

rmat

Flas

h M

edia

Hub

Cont

rolle

rUS

B 2.

02

SD/M

MC/

eMM

C/M

S/xD

ü

Auto

mot

ive48

-pin

QFN

USB

2660

Hi-S

peed

USB

2.0

Mul

ti-Fo

rmat

Flas

h M

edia

Hub

Cont

rolle

rUS

B 2.

02

SD/M

MC/

eMM

C/M

S/xD

(×2)

ü64

-pin

QFN

USB

4640

USB

2.0

Hi-S

peed

Sm

artH

ub w

ith H

SIC

inte

rface

Opt

ion

HSIC

2SD

/MM

C/eM

MC/

MS/

xDü

48-p

in Q

FN

www.microchip.com58

USB

Pro

duct

s

USB

-C™

/Pow

er D

eliv

ery

Con

trol

lers

Prod

uct

Des

crip

tion

PD V

ersi

onIn

terf

ace

Port

Pow

er C

ontr

olle

rIn

dust

rial V

ersi

on#

of P

ins

Pack

ages

UPD

360

PD 2

.0 C

ompl

iant U

SB-C

PD

Cont

rolle

r with

Inte

grat

ed P

PCPD

2.0

I² C, S

PIYe

sNo

44BG

AU

PD35

0PD

3.0

Com

plian

t USB

-C P

D Co

ntro

ller

PD 3

.0I² C

, SPI

NoYe

s +

Auto

28, 4

0Q

FNU

TC20

00US

B-C

Cont

rolle

rTy

pe-C

None

NoYe

s +

Auto

16Q

FN

USB

Sec

urity

Prod

uct

Des

crip

tion

Proc

esso

r Int

erfa

ce#

of D

owns

trea

m P

orts

Car

d Fo

rmat

sIn

dust

rial V

ersi

onPa

ckag

e

SEC

1110

Smar

t Car

d Co

ntro

ller

USB

2.0

–Sm

art C

ard

ü16

-pin

QFN

SEC

1210

Smar

t Car

d Co

ntro

ller w

ith M

ulti-

Inte

rface

Sup

port

USB,

UAR

T–

Smar

t Car

d ×2

ü24

-pin

QFN

Ethe

rnet

Pro

duct

s

Prod

uct

Des

crip

tion

Inte

rfac

e (U

pstr

eam

)W

ake-

on-L

ANEE

EIn

dust

rial V

ersi

onPa

ckag

es

Ethe

rnet

Brid

ges

LAN

9500

AUS

B 2.

0 to

10/

100

Ethe

rnet

Brid

geUS

B 2.

0ü

–ü

56-p

in Q

FNLA

N97

30US

B HS

IC 2

.0 to

10/

100

Ethe

rnet

Brid

geUS

B 2.

0 (H

SIC)

, MII

––

ü56

-pin

QFN

LAN

7500

USB

2.0

to 1

0/10

0/10

00 E

ther

net B

ridge

USB

2.0

ü–

ü56

-pin

QFN

LAN

7800

/01/

50US

B 3.

1 G

en1

to 1

0/10

0/10

00 E

ther

net B

ridge

(Opt

iona

l RG

MII

Out

put)

USB

3.1/

2.0/

HSIC

üü

Auto

mot

ive48

-pin

SQ

FN/5

6-SQ

FN/6

4-SQ

FNLA

N95

12US

B 2.

0 to

10/

100

Ethe

rnet

Brid

ge w

ith 2

-Por

t USB

2.0

Hub

USB

2.0

––

ü64

-pin

QFN

LAN

9513

USB

2.0

to 1

0/10

0 Et

hern

et B

ridge

with

3-P

ort U

SB 2

.0 H

ubUS

B 2.

0–

–ü

64-p

in Q

FNLA

N95

14US

B 2.

0 to

10/

100

Ethe

rnet

Brid

ge w

ith 4

-Por

t USB

2.0

Hub

USB

2.0

––

ü64

-pin

QFN

LAN

8973

0US

B 2.

0 to

10/

100

Ethe

rnet

Brid

geUS

B 2.

0ü

–Au

tom

otive

56-p

in Q

FNLA

N89

530

USB

2.0

to 1

0/10

0 Et

hern

et B

ridge

USB

2.0

ü–

Auto

mot

ive56

-pin

QFN

LAN

7430

PCIe

3.1

to 1

0/10

0/10

00 E

ther

net B

ridge

PCIe

3.1

at 2

.5G

T/s

üü

ü48

-pin

SQ

FNLA

N74

31PC

Ie 3

.1 to

RG

MII

Brid

gePC

Ie 3

.1 a

t 2.5

GT/

sü

üAu

tom

otive

72-p

in S

QFN

Ethe

rnet

Pro

duct

s

Prod

uct

Band

wid

thPo

rts

Inte

rfac

e (U

pstr

eam

)15

88–v

2C

able

Dia

gs10

0 Fx

Tem

pera

ture

AEC

-Q10

0 Au

toPa

ckag

esEt

herC

AT® C

ontr

olle

rs

LAN

9252

10/1

002/

3SP

I, SQ

I™, 8

-/16-

/32-

bit

host

bus

Cloc

k Sy

nc.

üü

–40º

C to

+85

ºC–

64-p

in Q

FN,

64-p

in T

QFP

-EP

Ethe

rnet

Sw

itche

sLA

N93

0310

/100

3M

II/RM

II/Tu

rbo

MII

––

ü–4

0ºC

to +

85ºC

–56

-pin

QFN

, 72-

pin

QFN

LAN

9352

10/1

002

SPI/S

QI/H

BIü

ü–

–40º

C to

+85

ºC–

72-p

in Q

FN, 8

0-pi

n TQ

FP-E

P

LAN

9353

10/1

003

MII/

RMII/

Turb

o M

IIü

üü

–40º

C to

+85

ºC–

64-p

in Q

FN,

64-p

in T

QFP

-EP

LAN

9354

10/1

003

RMII

üü

ü–4

0ºC

to +

85ºC

–56

-pin

QFN

LAN

9355

10/1

003

MII/

RMII/

Turb

o M

IIü

üü

–40º

C to

+85

ºC–

64-p

in Q

FN,

64-p

in T

QFP

-EP

KSZ8

463

10/1

003

MII/

RMII

üü

ü–4

0ºC

to +

85ºC

–64

-pin

LQ

FPKS

Z856

310

/100

3M

II/RM

II/RG

MII

üü

––4

0ºC

to 1

05ºC

ü64

-pin

VQ

FNKS

Z856

510

/100

5M

II/RM

II/RG

MII

üü

––4

0ºC

to 1

05ºC

ü12

8-pi

n TQ

FPKS

Z856

710

/100

7M

II/RM

II/RG

MII/

SGM

IIü

üw

ith S

GM

II–4

0ºC

to 1

05ºC

ü12

8-pi

n TQ

FPKS

Z876

510

/100

5M

II/G

MII/

RGM

II–

üü

–40º

C to

+85

ºC–

64-p

in Q

FN, 8

0-pi

n LQ

FPKS

Z877

510

/100

5M

II/G

MII/

RGM

II–

ü–

–40º

C to

+85

ºC–

80-p

in L

QFP

KSZ8

794

10/1

004

MII/

GM

II/RG

MII

–ü

––4

0ºC

to +

85ºC

–64

-pin

VQ

FN

Focus Product Selector Guide 59

Wire

less

Pro

duct

s: L

oRa®

Tec

hnol

ogy

Mod

ems

Prod

uct

Pin

Cou

ntFr

eque

ncy

Ran

ge (M

Hz)

Sens

itivi

ty

(dBm

)Po

wer

Out

put

(dBm

)R

SSI

TX P

ower

C

onsu

mpt

ion

(mA)

RX

Pow

er

Con

sum

ptio

n (m

A)Sl

eep

Inte

rfac

ePa

ckag

es

ATSA

MR3

464

137−

1020

−136

20N/

A95

mA

@ +

17 d

Bm20

1.5

µAUS

B, U

ART,

SPI

, I² C

64-p

in Q

FN

Wire

less

Pro

duct

s: rf

PIC

Tra

nsm

itter

s +

PIC

® M

CU

s

Prod

uct

I/O P

ins

Freq

uenc

y R

ange

(MH

z)Pr

ogra

m

Mem

ory

(Byt

es)

EEPR

OM

(b

ytes

)R

AM

(byt

es)

Dig

ital

Tim

erW

atch

dog

Tim

erM

ax. S

peed

(M

Hz)

ICSP

™ P

rogr

amm

ing

Cap

abili

tyM

odul

atio

nD

ata

Rat

e (k

bps)

Out

put P

ower

(d

Bm)

Ope

ratin

g Vo

ltage

Pack

ages

PIC

12F5

29T3

9A6

310–

928

2.3K

6420

11

18

Yes

OO

K/FS

K10

010

2.0–

3.7

14-p

in T

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Band

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Inte

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TQFP

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KSZ9

893

Gig

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3SG

MII/

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+85

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64-p

in Q

FN,

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pin

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896

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GM

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pin

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KSZ9

897

Gig

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MI/S

GM

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GM

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8-pi

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FP

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7511

10/1

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000/

2500

Mbp

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SGM

II 10

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100F

X,

1000

X–4

0ºC

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C–

172/

VQFN

VSC

7512

10/1

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000/

2500

Mbp

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SGM

II, Q

SGM

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–ü

100F

X,

1000

X–4

0ºC

to +

125º

C–

172/

VQFN

VSC

7513

10/1

00/1

000/

2500

Mbp

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SGM

II, Q

SGM

II 10

00Ba

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(4)

üü

100F

X,

1000

X–4

0ºC

to 1

25ºC

–25

6/PB

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VSC

7514

10/1

00/1

000/

2500

Mbp

s10

SGM

II, Q

SGM

II 10

00Ba

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(4)

üü

100F

X,

1000

X–4

0ºC

to +

125º

C–

256/

PBG

A

VSC

7420

10/1

00/1

000/

2500

Mbp

s10

SG

MII

1000

Base

-T (8

)–

ü10

0FX,

10

00X

–40º

C to

+12

5ºC

–67

2/HS

BGA

VSC

7421

10/1

00/1

000/

2500

Mbp

s17

SG

MII,

QSG

MII

1000

Base

-T (1

2)–

ü10

0FX,

10

00X

–40º

C to

+12

5ºC

–67

2/HS

BGA

VSC

7422

10/1

00/1

000/

2500

Mbp

s25

SG

MII,

QSG

MII

1000

Base

-T (1

2)–

ü10

0FX,

10

00X

–40º

C to

+12

5ºC

–67

2/HS

BGA

VSC

7423

10/1

00/1

000/

2500

Mbp

s7

SG

MII

1000

Base

-T (5

)ü

ü10

0FX,

10

00X

–40º

C to

+12

5ºC

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2/HS

BGA

VSC

7424

10/1

00/1

000

Mbp

s10

SGM

II 10

00Ba

se-T

(8)

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100F

X,

1000

X0º

C to

125

ºC–

672/

HSBG

A

VSC

7425

10/1

00/1

000

Mbp

s18

SGM

II, Q

SGM

II 10

00Ba

se-T

(12)

–ü

100F

X,

1000

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C to

125

ºC–

672/

HSBG

A

VSC

7426

10/1

00/1

000

Mbp

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MII

1000

Base

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2)–

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0ºC

to 1

25ºC

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2/HS

BGA

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7427

10/1

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000

Mbp

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SGM

II, Q

SGM

II 10

00Ba

se-T

(12)

–ü

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X,

1000

X0º

C to

125

ºC–

672/

HSBG

A

VSC

7440

10/1

00/1

000/

2500

Mbp

s 10

Gbp

s10

SGM

II 10

00Ba

se-T

XFI

üü

100F

X,

1000

X, S

FI–4

0ºC

to +

125º

C–

324/

PBG

A

VSC

7448

10/1

00/1

000/

2500

Mbp

s 10

Gbp

s52

SGM

II, Q

SGM

II XF

I, XA

UI,

RXAU

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0FX,

10

00X,

SFI

–40º

C to

+11

0ºC

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2/HF

CBG

A

VSC

7449

10/1

00/1

000/

2500

Mbp

s 10

Gbp

s52

SGM

II, Q

SGM

II XF

I, XA

UI,

RXAU

Iü

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0FX,

10

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SFI

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C to

+11

0ºC

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2/HF

CBG

A

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tem

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www.microchip.com60

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Pro

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FNLA

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41A

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-pin

QFN

LAN

8742

A10

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24-p

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FNLA

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pin

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VSC

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Gig

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8258

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Opt

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4Cu

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5ºC*

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Opt

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2Cu

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FI, S

FIü

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5ºC*

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6 pi

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FN

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par

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tem

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Hig

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PH

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Prod

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Des

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Max

Ba

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MAC

sec

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Focus Product Selector Guide 61

Auto

mot

ive:

Med

ia O

rient

ed S

yste

ms

Tran

spor

t (M

OST

®) N

etw

ork

Infe

rfac

e C

ontr

olle

rs

Inte

llige

nt N

etw

ork

Inte

rfac

e C

ontr

olle

r (IN

IC) f

or M

OST

Net

wor

ks

Prod

uct

Feat

ures

Inte

rfac

eAm

bien

t Tem

pera

ture

R

ange

Pin

Pack

age

OS8

1110

INIC

Fully

-enc

apsu

lated

, sin

gle-

chip

, sin

gle

MO

ST15

0 ne

twor

k po

rt, e

mbe

dded

net

wor

k m

anag

emen

t, su

ppor

ts M

OST

em

bedd

ed E

ther

net c

hann

el an

d iso

chro

nous

cha

nnels

(MO

ST15

0)M

OST

150

FOT

or e

xter

nal M

OST

150

coax

tran

sceiv

er, I

²C, I

²S/S

PDIF,

TSI

, SP

I, RM

CK, J

TAG

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iaLB®

3-P

in, M

ediaL

B bu

s 6-

Pin

−40°

C to

105

°C48

QFN

OS8

1082

INIC

Fully

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apsu

lated

, sin

gle-

chip

, em

bedd

ed n

etw

ork

man

agem

ent (

MO

ST50

)M

OST

50 e

lectri

cal (U

TP),

I²C, I

²S®, M

ediaL

B−4

0°C

to 9

5°C

64ET

QFP

OS8

1092

INIC

ROM

ver

sion

of O

S810

82 IN

IC (M

OST

50)

MO

ST50

elec

trica

l (UTP

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iaLB

−40°

C to

105

°C48

QFN

OS8

1050

INIC

Fully

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gle-

chip

with

em

bedd

ed n

etw

ork

man

agem

ent (

MO

ST25

)M

OST

25 F

OT,

I²C,

I²S,

Med

iaLB

Stan

dard

rang

e: −

40 to

85

Exte

nded

rang

e:

−40

to 1

0544

QFP

, ET

QFP

OS8

1060

INIC

ROM

ver

sion

of O

S810

50 IN

IC (M

OST

25)

MO

ST25

FO

T, I²

C, I²

S, M

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1118

AF IN

ICFu

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ingle-

chip

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le M

OST

150

netw

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port,

em

bedd

ed n

etw

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man

agem

ent,

integ

rate

d M

OST

150

coax

ial

trans

ceive

r, su

ppor

ts M

OST

em

bedd

ed E

ther

net c

hann

el, is

ochr

onou

s ch

anne

ls (M

OST

150)

, and

USB

2.0

high

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ed p

ort

MO

ST15

0 FO

T or

MO

ST15

0 co

axial

phy

sical

layer

, USB

2.0

hig

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G

PIO

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CK, J

TAG

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3-Pi

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ediaL

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C to

+85

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1118

BF IN

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OST

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agem

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Eth

erne

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nd U

SB 2

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spee

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OST

150

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MCK

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Med

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bus

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1119

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chip,

dou

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ed n

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ports

MOS

T em

bedd

ed E

ther

net c

hann

el, is

ochr

onou

s cha

nnels

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T150

), and

USB

2.0

high

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ed p

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MO

ST15

0 FO

T or

MO

ST15

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PIO

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2150

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ST15

0 C

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al T

rans

ceiv

er)

MOS

T150

Coa

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rans

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r, int

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ckag

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coax

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al lay

er, i

nter

face

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OST

150

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+10

5°C

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Auto

mot

ive:

Pow

er M

anag

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t Com

pani

on

For D

iagn

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s, S

tatu

s M

onito

ring

and

Pow

er S

uppl

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Prod

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Feat

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man

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g an

d po

wer

sup

ply

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timed

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O C

ompa

nion

M

ultim

edia

I/O

Por

t Exp

ande

r

Prod

uct

Feat

ures

Inte

rfac

eTe

mpe

ratu

re R

ange

Pin

Pack

ages

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5650

Low

-cos

t mul

timed

ia I/O

por

t exp

ande

r, DT

CP c

o-pr

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sor

Med

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t Bus

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SPI

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C to

105

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8ET

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5652

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us In

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PI, I

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Med

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erial

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FN

Auto

mot

ive:

Eth

erne

t Con

trol

lers

10

/100

Eth

erne

t Con

trol

lers

with

USB

2.0

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C o

r HBI

Prod

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Feat

ures

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rfac

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mpe

ratu

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nPa

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P Au

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us In

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BI)

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510

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peed

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0 Et

hern

et c

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ller

USB

2.0

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to 8

556

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*HP

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X eli

min

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the

need

for s

pecia

l cro

ssov

er c

ables

whe

n co

nnec

ting

LAN

devic

es to

geth

er.

Auto

mot

ive:

Eth

erne

t Sw

itch

10/1

00 M

anag

ed E

ther

net S

witc

h w

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P Au

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DIX

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port

Prod

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Feat

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rfac

eTe

mpe

ratu

re R

ange

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rts

Pin

Pack

ages

LAN

8930

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gh p

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rman

ce, s

mall

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prin

t, fu

ll-fe

atur

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ingl

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MII

supp

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MII/

RMII,

2 ×

10/

100

PHYs

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10/

100

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s−4

0 to

85

456

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mot

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erne

t Tra

nsce

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10/1

00 E

ther

net T

rans

ceiv

er w

ith H

P Au

to-M

DIX

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port

*, Fe

atur

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flexP

WR

® T

echn

olog

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Prod

uct

Feat

ures

Inte

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mpe

ratu

re R

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)Pi

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LAN

8873

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all fo

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8730

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40 to

85

LAN8

8730

BM: −

40 to

105

32Q

FN

*HP

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MDI

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need

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ssov

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whe

n co

nnec

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LAN

devic

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www.microchip.com62

Auto

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USB

2.0

Hub

U

SB 2

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Pack

ages

USB

8251

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nerg

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236

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nerg

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USB

2.0

Hub

and

Fla

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edia

Car

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High

Cap

acity

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Auto

mot

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peed

USB

2.0

Tra

nsce

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U

SB 2

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rans

ceiv

er w

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ce

Prod

uct

Feat

ures

Inte

rfac

eTe

mpe

ratu

re R

ange

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rts

Pin

Pack

ages

USB

8334

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ulti-

frequ

ency

refe

renc

e clo

ck1.

8V to

3.3

V UL

PI−4

0 to

105

132

QFN

Auto

mot

ive:

Hi-S

peed

USB

2.0

Bat

tery

Cha

rger

St

anda

lone

USB

Bat

tery

Cha

rger

Prod

uct

Feat

ures

Tem

pera

ture

Ran

ge (°

C)

Supp

orts

Pin

Pack

ages

UC

S810

01US

B ba

ttery

cha

rger

sup

porti

ng B

C1.2

, Chi

na c

harg

ing,

App

le® a

nd R

IM® c

harg

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profi

les a

s w

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s pr

ogra

mm

able

char

ging

pro

files

for u

nfor

esee

n pe

riphe

rals

−40

to 8

5US

B, I² C

, SM

Bus

28Q

FN

UC

S810

02US

B ba

ttery

cha

rger

sup

porti

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C1.2

, Chi

na c

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ing,

App

le an

d RI

M c

harg

ing

profi

les a

s w

ell a

s pr

ogra

mm

able

char

ging

pro

files

for u

nfor

esee

n pe

riphe

rals

−40

to 8

5US

B, I² C

, SM

Bus

28Q

FN

Auto

mot

ive:

Hi-S

peed

USB

2.0

Cha

rger

Con

trol

lers

and

Por

t Pro

tect

ion

Prod

uct

Feat

ures

Tem

pera

ture

Ran

ge (°

C)

Supp

orts

Pin

Pack

ages

UC

S810

03US

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rt ch

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r con

trolle

r sup

porti

ng B

C1.2

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na c

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App

le® a

nd R

IM® c

harg

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profi

les a

s w

ell a

s pr

ogra

mm

able

char

ging

pro

files

for u

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esee

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riphe

rals

and

inte

grat

ed c

urre

nt m

onito

ring

−40

to 8

5US

B, I² C

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Bus

28Q

FN

UC

S211

3Du

al US

B po

rt po

wer

pro

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switc

h an

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mon

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−40

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Bus

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FN

Auto

mot

ive:

Wire

less

Aud

io

Rad

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requ

ency

Dig

ital A

udio

Tra

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Prod

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Feat

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Typi

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ink

Mod

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C

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PA O

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erAu

dio

Qua

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Wire

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stre

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st

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very

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20 m

W1.

5 dB

m16

bit,

44.

1 ks

/s

ster

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C Q

100

Auto

mot

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Cap

aciti

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ouch

Sen

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Prod

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Feat

ures

Inpu

t Cha

nnel

sLE

D D

river

sPr

oxim

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clud

edIn

terf

ace

Pin

Pack

ages

CAP

8118

8Re

set,

wak

e an

d ale

rt, a

utom

atic

reca

libra

tion,

bas

e ca

pacit

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com

pens

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8ü

I² C/S

PI/B

C-Li

nk24

QFN

Focus Product Selector Guide 63

Embe

dded

Con

trol

lers

and

Sup

er I/

O: E

mbe

dded

Con

trol

lers

Prod

uct

Des

crip

tion

Cor

eC

ode

Stor

age

Dat

a R

AMEE

PRO

MC

rypt

o En

gine

GPI

OH

ost I

nter

face

Ope

ratin

g Te

mpe

ratu

re (°

C)

UAR

TM

AF/S

AFPa

ckag

e

MEC

1418

-I/SZ

High

-per

form

ance

32-

bit e

mbe

dded

micr

ocon

trolle

r with

128

KB

of

SRAM

and

32

KB o

f Boo

t RO

M, e

SPI,

LPC,

I² CM

IPS

192

KB S

RAM

(C

ode

+ Da

ta)

PO S

RAM

N/A

No10

6eS

PI, L

PC, I

² C–4

0 to

+85

Full

MAF

144

WFB

GA,

9

x 9

mm

MEC

1428

-SZ-

CHi

gh-p

erfo

rman

ce 3

2-bi

t em

bedd

ed m

icroc

ontro

ller w

ith 2

24 K

B of

SR

AM a

nd 3

2 KB

of B

oot R

OM

, eSP

I, LP

C, I² C

MIP

S19

2 KB

SRA

M

(Cod

e +

Data

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SRA

MN/

AYe

s65

eSPI

, LPC

, I² C

0 to

+70

Full

MAF

/SAF

144

WFB

GA,

9

x 9

mm

MEC

1701

H-C

1-SZ

High

-per

form

ance

32-

bit e

mbe

dded

micr

ocon

trolle

r with

224

KB

of

SRAM

and

32

KB o

f Boo

t RO

M a

nd S

ecur

e Bo

ot, e

SPI,

LPC,

I² CAr

m C

orte

x-M

4F

224

KB32

KB

N/A

Yes

123

eSPI

, LPC

, I² C

0 to

+70

2M

AF14

4 W

FBG

A,

9 x

9 m

m

MEC

1703

H-C

1-SZ

High

-per

form

ance

32-

bit e

mbe

dded

micr

ocon

trolle

r with

224

KB

of

SRAM

and

32

KB o

f Boo

t RO

M a

nd S

ecur

e Bo

ot, e

SPI,

LPC,

I² CAr

m C

orte

x-M

4F

224

KB32

KB

2 KB

Yes

148

eSPI

, LPC

, I² C

0 to

+70

2M

AF14

4 W

FBG

A,

9 x

9 m

m

MEC

1704

Q-C

1-I/S

ZHi

gh-p

erfo

rman

ce 3

2-bi

t em

bedd

ed m

icroc

ontro

ller w

ith 3

16 K

B of

SR

AM a

nd 6

4 KB

of B

oot R

OM

and

Sec

ure

Boot

, eSP

I, LP

C, I² C

Arm

Cor

tex-

M4F

31

6 KB

64 K

BN/

AYe

s12

3eS

PI, L

PC, I

² C–4

0 to

+85

2M

AF14

4 W

FBG

A,

9 x

9 m

m

MEC

1705

Q-C

1-I/S

ZHi

gh-p

erfo

rman

ce 3

2-bi

t em

bedd

ed m

icroc

ontro

ller w

ith 3

16 K

B of

SR

AM a

nd 6

4 KB

of B

oot R

OM

and

Sec

ure

Boot

eSP

I, LP

C, I² C

Arm

Cor

tex-

M4F

31

6 KB

64 K

B2

KBYe

s14

8eS

PI, L

PC, I

² C–4

0 to

+85

2M

AF14

4 W

FBG

A,

9 x

9 m

m

Embe

dded

Con

trol

lers

and

Sup

er I/

O: S

uper

I/O

Des

crip

tion

Ope

ratin

g Te

mpe

ratu

reG

PIO

Secu

rity

Key

R

egis

ter

PEC

I Sup

port

SMBu

s In

terf

ace

Intr

uder

D

etec

tion

Res

ume

Res

etPa

ckag

e

SCH

3221

LPC

IO w

ith m

ultip

le se

rial p

orts

, 804

2 KB

C, re

set g

ener

atio

n an

d HW

M–4

0°C

to +

85°C

33No

NoNo

NoNo

64 W

FBG

ASC

H32

22LP

C IO

with

mul

tiple

seria

l por

ts, 8

042

KBC,

rese

t gen

erat

ion

and

HWM

–40°

C to

+85

°C23

Yes

NoNo

NoYe

s84

WFB

GA

SCH

3223

LPC

IO w

ith m

ultip

le se

rial p

orts

, 804

2 KB

C, re

set g

ener

atio

n an

d HW

M–4

0°C

to +

85°C

19Ye

sNo

NoNo

Yes

64 W

FBG

ASC

H32

24LP

C IO

with

mul

tiple

seria

l por

ts, 8

042

KBC,

rese

t gen

erat

ion

and

HWM

–40°

C to

+85

°C24

Yes

NoNo

NoYe

s10

0 W

FBG

ASC

H32

26LP

C IO

with

mul

tiple

seria

l por

ts, 8

042

KBC,

rese

t gen

erat

ion

and

HWM

–40°

C to

+85

°C40

Yes

NoNo

NoYe

s10

0 W

FBG

ASC

H32

27LP

C IO

with

mul

tiple

seria

l por

ts, 8

042

KBC,

rese

t gen

erat

ion

and

HWM

–40°

C to

+85

°C40

Yes

NoNo

NoYe

s14

4 W

FBG

A

Secu

rity

Prod

ucts

Prod

uct

Cor

eM

ax

Spee

dR

am

(KB)

Ope

ratin

g Te

mpe

ratu

rePa

ckag

eR

NG

Mon

oton

ic

Cou

nter

Cry

pto

Algo

rithm

s O

TP -

Use

r Pr

ogra

mm

able

Mem

ory

Prot

ectio

n U

nit

Deb

ug

Inte

rfac

eFl

oatin

g Po

int U

nit

CEC

1302

Arm

® C

orte

x®-M

4 48

128

0°C

to +

70°C

144-

pin

WFB

GA

Yes

NoAE

S128

, AES

129,

AES

256,

SHA

-1, S

HA-2

56, R

SA-5

12 to

RSA

-204

850

0-bi

tsNo

5-pi

nYe

s

CEC

1702

Arm

Cor

tex-

M4

9648

00°

C to

+70

°C84

-pin

W

FBG

AYe

sYe

sAE

S128

, AES

129,

AES

256,

SHA

-1, S

HA-2

56, S

HA-3

84, S

HA-5

12, R

SA-1

024

to R

SA-4

096,

ECD

SA, E

C-KC

DSA,

Sup

port

for C

urve

255

19, E

d255

1925

00-b

itsYe

s5-

pin

and

SWD

Yes

Secu

rity

Prod

ucts

Product

Typical Sleep Current

Typical Application

Interface (Designator)

Tamper Detection Pin

Memory Density

Temp Range (ºC)

Min Vcc Supply

Unique ID

RNG

Monotonic Counters

Crypto Algorithms

Key Size

Individual Slots

TLS Stack Support

Cloud Support

Pacakges (Designator)

Secure Provisioning Service

ECC

508A

30 n

A Ty

p 2

μA M

ax

Auth

entic

atio

n fo

r IP

conn

ecte

d no

de a

nd

acce

ssor

y au

then

ticat

ion

I² C (D

A)

Sing

le w

ire (C

Z)1

4.5

Kb–4

0 to

+8

52.

0V72

-bit

seria

l nu

mbe

rFI

PS2

FIPS

186-

3 EC

DSA,

NIS

T P2

56, N

IST

SHA2

56 w

ith H

MAC

opt

ion,

ECD

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6-bi

t key

s16

Cyclo

neSS

L,

Wol

fSSL

, Ope

nSSL

, W

INC

TLS

AWS,

Az

ure

SOIC

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), UD

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3

cont

acts

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)Ye

s

ECC

108A

30 n

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p 2

μA M

axAc

cess

ory

auth

entic

atio

nI² C

(DA)

Si

ngle

wire

(CZ)

14.

5 Kb

–40

to

+85

2.0V

72-b

it se

rial

num

ber

FIPS

2FI

PS18

6-3

ECDS

A, N

IST

P256

, NIS

T B2

83, N

IST

K283

, NIS

T SH

A256

with

HM

AC o

ptio

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bits

and

28

3-bi

ts k

eys

16N/

AN/

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IC (M

AH),

UDFN

(SSH

),

3 co

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ts (R

BH)

Yes

SHA2

04A

30 n

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p 2

μA M

axDi

spos

able/

acce

ssor

y au

then

ticat

ion

I² C (D

A)

Sing

le w

ire (C

Z)4.

5 Kb

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to

+85

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72-b

it se

rial

num

ber

FIPS

2NI

ST S

HA25

6 w

ith H

MAC

Opt

ion

256-

bit k

eys

16N/

AN/

ASO

IC (M

AH),

UDFN

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) 3

cont

acts

, (RB

H), S

OT-

23 (S

TU),

TSSO

P (X

HD) X

DFN

(MXH

)Ye

s

AES1

32

100

μA

@3.

3V V

cc

250

μA

@5.

5V V

cc

Secu

re s

tora

geSP

I (Q

) I² C

(R )

16x

2

Kb–4

0 to

+8

52.

0V64

-bit

seria

l nu

mbe

rFI

PS16

AES-

CCM

for a

uthe

ntica

tion,

M

AC C

apab

ility

Up to

16x

12

8-bi

t key

sN/

AN/

ASO

IC (8

S1),

UDFN

(8M

A2)

No

www.microchip.com64

Touc

h an

d 3D

Ges

ture

Con

trol

: C

apac

itive

Tou

ch C

ontr

olle

rs

Prod

uct

Butto

nsLE

D

Driv

ers

Addi

tiona

l Fea

ture

sPr

oxim

ityIn

terf

ace

Safe

ty c

ertifi

ed T

ouch

VD

E/U

L 60

730

clas

s B

Volta

ge (V

)Pi

nsPa

ckag

es

AT42

QT1

010

1–

adju

stab

le se

nsitiv

ity, n

oise

filte

ring

üG

PIO

1.8–

5.5

6/8

SOT-

23, U

DFN

AT42

QT1

011

1–

adju

stab

le se

nsitiv

ity, n

oise

filte

ring

üG

PIO

1.8–

5.5

6/8

SOT-

23, U

DFN

AT42

QT1

012

1–

adju

stab

le se

nsitiv

ity, n

oise

rejec

tion

filter

s, lo

w-p

ower

mod

eü

GPI

O1.

8–5.

56/

8SO

T-23

, UDF

NAT

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T104

04

–ad

just

able

sens

itivity

, noi

se re

jectio

n filt

ers,

low

-pow

er m

ode,

Adj

acen

t key

sup

pres

sion

(AKS

)G

PIO

1.8–

5.5

20VQ

FNAT

42Q

T105

05

–ad

just

able

sens

itivity

, noi

se re

jectio

n filt

ers,

low

-pow

er m

ode,

Adj

acen

t key

sup

pres

sion

(AKS

)I² C

/GPI

O1.

8–5.

512

/20

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, WLC

SPAT

42Q

T106

06

–ad

just

able

sens

itivity

, noi

se re

jectio

n filt

ers,

low

-pow

er m

ode,

Adj

acen

t key

sup

pres

sion

(AKS

)I² C

/GPI

O1.

8–5.

528

VQFN

AT42

QT1

070

7–

adju

stab

le se

nsitiv

ity, n

oise

rejec

tion

filter

s, lo

w-p

ower

mod

e, A

djac

ent k

ey s

uppr

essio

n (A

KS)

I² C/G

PIO

1.8–

5.5

14/2

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IC, V

QFN

AT42

QT2

100

10–

slide

r/whe

el, a

djus

tabl

e se

nsitiv

ity, n

oise

rejec

tion

filter

s, lo

w-p

ower

mod

e, A

djac

ent k

ey s

uppr

essio

n (A

KS)

SPI/G

PIO

2.0–

5.5

32VQ

FNAT

42Q

T111

011

–ad

just

able

sens

itivity

, noi

se re

jectio

n filt

ers,

low

-pow

er m

ode,

Adj

acen

t key

sup

pres

sion

(AKS

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I/GPI

O3.

0–5.

532

TQFP

, VQ

FNAT

42Q

T212

012

–sli

der/w

heel,

adj

usta

ble

sens

itivity

, noi

se re

jectio

n filt

ers,

low

-pow

er m

ode,

Adj

acen

t key

sup

pres

sion

(AKS

)ü

I² C1.

8–5.

520

SOIC

, TSS

OP,

VQ

FNAT

42Q

T216

016

–sli

der/w

heel,

adj

usta

ble

sens

itivity

, noi

se re

jectio

n filt

ers,

low

-pow

er m

ode,

Adj

acen

t key

sup

pres

sion

(AKS

)I² C

1.8–

5.5

28VQ

FNAT

42Q

T124

424

–IE

C/EN

/UL6

0730

Clas

s B

safe

ty, F

MEA

, adj

usta

ble

sens

itivity

, noi

se re

jectio

n filt

ers,

Adj

acen

t key

sup

pres

sion

(AKS

)I² C

ü3.

0–5.

532

TQFP

, VQ

FNAT

42Q

T124

524

–IE

C/EN

/UL6

0730

Clas

s B

safe

ty, F

MEA

, adj

usta

ble

sens

itivity

, noi

se re

jectio

n filt

ers,

Adj

acen

t key

sup

pres

sion

(AKS

)SP

Iü

3.0–

5.5

32TQ

FP, V

QFN

AT42

QT1

481

48–

IEC/

EN/U

L607

30 C

lass

B sa

fety,

FM

EA, a

djus

tabl

e se

nsitiv

ity, n

oise

rejec

tion

filter

sSP

I/UAR

Tü

4.8–

5.3

44TQ

FPAT

42Q

T264

064

–IE

C/EN

/UL6

0730

Clas

s B

safe

ty, F

MEA

, adj

usta

ble

sens

itivity

, noi

se re

jectio

n filt

ers

SPI

ü4.

8–5.

344

TQFP

CAP

1133

33

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I² C3.

0–3.

610

QFN

CAP

1106

6–

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I² C3.

0–3.

610

QFN

CAP

1126

62

slide

r, re

set,

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I² C/S

PI3.

0–3.

616

QFN

CAP

1166

66

slide

r, re

set,

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I² C/S

PI3.

0–3.

620

QFN

CAP

1128

82

slide

r, re

set,

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I² C/S

PI3.

0–3.

620

QFN

CAP

1188

88

slide

r, re

set,

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I² C/S

PI3.

0–3.

624

QFN

CAP

1114

1411

slide

r, re

set,

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I² C3.

0–3.

632

QFN

CAP

1203

3–

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nI² C

3.3–

5.0

8Q

FNC

AP12

933

–ale

rt, a

utom

atic

calib

ratio

n, b

ase

capa

citan

ce c

ompe

nsat

ion

üI² C

QFN

CAP

1206

6–

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nI² C

QFN

CAP

1296

6–

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I² CQ

FNC

AP12

088

–ale

rt, a

utom

atic

calib

ratio

n, b

ase

capa

citan

ce c

ompe

nsat

ion

I² CQ

FNC

AP12

988

–ale

rt, a

utom

atic

calib

ratio

n, b

ase

capa

citan

ce c

ompe

nsat

ion

üI² C

3.3–

5.0

16Q

FNC

AP12

1414

11sli

der,

rese

t, ale

rt, a

utom

atic

calib

ratio

n, b

ase

capa

citan

ce c

ompe

nsat

ion,

aud

io o

utpu

tü

I² C3.

0–3.

632

QFN

MTC

H10

22

–op

timize

d fo

r but

ton

repl

acem

ent,

adju

stab

le se

nsitiv

ity, n

oise

rejec

tion

filter

s, a

ctive

gua

rd, l

ow-p

ower

mod

eü

GPI

O2.

1–3.

68

MSO

P, U

DFN

MTC

H10

55

–op

timize

d fo

r but

ton

repl

acem

ent,

adju

stab

le se

nsitiv

ity, n

oise

rejec

tion

filter

s, a

ctive

gua

rd, l

ow-p

ower

mod

eü

GPI

O2.

1–3.

614

/16

TSSO

P, Q

FNM

TCH

108

8–

optim

ized

for b

utto

n re

plac

emen

t, ad

just

able

sens

itivity

, noi

se re

jectio

n filt

ers,

act

ive g

uard

, low

-pow

er m

ode

üG

PIO

2.1–

3.6

20SS

OP,

UQ

FN

Touc

h an

d 3D

Ges

ture

Con

trol

: Pro

ject

ed C

apac

itive

Mul

ti-to

uch

Touc

hpad

and

Tou

chsc

reen

Con

trol

lers

(Tur

nkey

Sol

utio

ns)

Prod

uct

Cha

nnel

sSu

rfac

e G

estu

res

Addi

tiona

l Fea

ture

sAu

tom

otiv

eTe

mp

Ran

ge (º

C)

Low

Pow

erIn

terf

ace

Volta

ge

Pin

Pack

age

ATM

XT14

4U14

4Si

ngle

and

dual

finge

rSe

lf an

d m

utua

l cap

acita

nce,

glo

ve a

nd th

ick le

ns, m

oist

ure

supp

ort

––4

0 to

+85

YI² C

1.8–

3.3V

38Q

FNAT

MXT

225T

224

Sing

le an

d du

al fin

ger

Self

and

mut

ual c

apac

itanc

e, g

love

and

thick

lens

, moi

stur

e su

ppor

tY

–40

to +

105

YI² C

, SPI

3.1–

3.3V

100

TQFP

ATM

XT33

6U33

6Si

ngle

and

dual

finge

rSe

lf an

d m

utua

l cap

acita

nce,

glo

ve a

nd th

ick le

ns, m

oist

ure

supp

ort

––4

0 to

+85

YI² C

1.8–

3.3V

56XQ

FNAT

MXT

449T

448

Sing

le an

d du

al fin

ger

Self

and

mut

ual c

apac

itanc

e, g

love

and

thick

lens

, moi

stur

e su

ppor

tY

–40

to +

105

YI² C

, SPI

3.1–

3.3V

100

TQFP

ATM

XT64

0U64

0Si

ngle

and

dual

finge

rSe

lf an

d m

utua

l cap

acita

nce,

glo

ve a

nd th

ick le

ns, m

oist

ure

supp

ort

––4

0 to

+85

YI² C

1.8–

3.3V

88UF

BGA

ATM

XT64

1T64

0Si

ngle

and

dual

finge

rSe

lf an

d m

utua

l cap

acita

nce,

glo

ve a

nd th

ick le

ns, m

oist

ure

supp

ort

Y–4

0 to

+10

5Y

I² C, S

PI3.

1–3.

3V10

0TQ

FPAT

MXT

799T

798

Sing

le an

d du

al fin

ger

Self

and

mut

ual c

apac

itanc

e, g

love

and

thick

lens

, moi

stur

e su

ppor

tY

–40

to +

105

YI² C

, SPI

3.1–

3.3V

144

LQFP

MXT

1066

T210

66Si

ngle

and

dual

finge

rSe

lf an

d m

utua

l cap

acita

nce,

glo

ve a

nd th

ick le

ns, m

oist

ure

supp

ort

––4

0 to

+85

Y1.

8–3.

3V11

4UF

BGA

MXT

1189

T11

88Si

ngle

and

dual

finge

rSe

lf an

d m

utua

l cap

acita

nce,

glo

ve a

nd th

ick le

ns, m

oist

ure

supp

ort

Y–4

0 to

+10

5Y

I² C, S

PI3.

1–3.

3V14

4LQ

FPM

XT16

64T3

1664

Sing

le an

d du

al fin

ger

Self

and

mut

ual c

apac

itanc

e, g

love

and

thick

lens

, moi

stur

e su

ppor

t–

–40

to +

85Y

I² C, U

SB1.

8–3.

3V13

6UF

BGA

MXT

1665

T16

64Si

ngle

and

dual

finge

rSe

lf an

d m

utua

l cap

acita

nce,

glo

ve a

nd th

ick le

ns, m

oist

ure

supp

ort

Y–4

0 to

+10

5Y

I² C, S

PI3.

1–3.

3V14

4LQ

FPM

XT29

52T2

2912

Sing

le an

d du

al fin

ger

Self

and

mut

ual c

apac

itanc

e, g

love

and

thick

lens

, moi

stur

e su

ppor

t–

–40

to +

85Y

I² C, U

SB1.

8–3.

3V16

2UF

BGA

Focus Product Selector Guide 65

Touc

h an

d 3D

Ges

ture

Con

trol

: 3D

Ges

ture

Con

trol

lers

Prod

uct

Cha

nnel

sPo

sitio

n Tr

acki

ngAd

ditio

nal F

eatu

res

Auto

mot

ive

Tem

pera

ture

Ran

geLo

w P

ower

Inte

rfac

eVo

ltage

Pi

nPa

ckag

e

MG

C30

305

–G

estu

re p

ort,

auto

wak

e/sle

ep, t

ouch

det

ectio

n–

–20˚

C to

+85

˚CY

I² C, E

DI (g

estu

re p

ort)

3.3V

28SS

OP

MG

C31

305

YG

estu

re p

ort,

auto

wak

e/sle

ep, t

ouch

det

ectio

n–

–20˚

C to

+85

˚CY

I² C, E

DI (g

estu

re p

ort)

3.3V

28Q

FNM

GC

3140

5Y

Ges

ture

por

t, au

to w

ake/

sleep

, tou

ch d

etec

tion

Y–4

0˚C

to +

125˚

CY

I² C, E

DI (g

estu

re p

ort)

3.3V

48UQ

FN

Pow

er D

iscr

etes

: Sili

con

Car

bide

(SiC

) MO

SFET

s

Part

Num

ber

Volta

geR

DS(

on)

Pack

age

MSC

xxxS

MA0

70B

700V

15–9

0 m

ΩTO

-247

MSC

xxxS

MA0

70S

700V

15–9

0 m

ΩD3

PAK

MSC

xxxS

MA1

20B

1200

V25

–280

mΩ

TO-2

47

MSC

xxxS

MA1

20S

1200

V25

–360

mΩ

D3PA

K

MSC

xxxS

MA1

20J

1200

V25

–80

mΩ

SOT-

227

MSC

xxxS

MA1

70B

1700

V45

–750

mΩ

TO-2

47

MSC

xxxS

MA1

70S

1700

V45

–750

mΩ

D3PA

K

Pow

er D

iscr

etes

: Sili

con

Car

bide

(SiC

) Dio

des

Part

Num

ber

Volta

geR

DS(

on)

Pack

age

MSC

xxxS

DA0

70K

700V

10-3

0ATO

-220

MSC

xxxS

DA0

70B

700V

10-5

0 A

TO-2

47

MSC

xxxS

DA0

70S

700V

30-5

0AD3

PAK

MSC

xxxS

DA1

20K

1200

V10

-30A

TO-2

20

MSC

xxxS

DA1

20B

1200

V10

-50A

TO-2

47

MSC

xxxS

DA1

20S

1200

V10

-30A

D3PA

K

MSC

xxxS

DA1

70B

1700

V10

-50

ATO

-247

Pow

er D

iscr

etes

: Ins

ulat

ed G

ate

Bipo

lar T

rans

isto

rs (I

GBT

s)

Stan

dard

Ser

ies

Volta

ge R

ange

(V)

Tech

nolo

gyEa

sy to

Par

alle

lSh

ort C

ircui

t Saf

e O

pera

ting

Ran

ge (S

OA)

Para

met

er

MO

S 7™

1200

Punc

h-Th

roug

h-

-Ul

tra-lo

w g

ate

char

ge

MO

S 8™

600,

650

, 900

, 120

0Pu

nch-

Thro

ugh,

Non

-Pun

ch-T

hrou

gh-

-Hi

ghes

t effic

iency

Fiel

d St

op T

renc

h G

ate

600,

120

0Fi

eld S

top

Yes

Yes

Low

est c

ondu

ctio

n lo

ss

Pow

er D

iscr

etes

: Pow

er M

OS

8™ M

OSF

ETs/

FRED

FETs

MO

SFET

Par

t Num

ber

FRED

FET

Part

Num

ber

BVD

SS (V

)R

ds(o

n)M

ax (Ω

)Id

(A)

Id (A

)Pa

ckag

e St

yle

APTx

xM12

0xx

APTx

xF12

0xx

1200

2.4–

0.29

8–35

7-33

TO-2

47, D

3PAK

, T-M

AX®, T

O-2

64, I

SOTO

P

APTx

xM10

0xx

APTx

xF10

0xx

1000

2.0–

0.18

8–45

7-42

TO-2

47, D

3PAK

, T-M

AX, T

O-2

64, I

SOTO

P

APTx

xM80

xxAP

TxxF

80xx

800

0.9–

0.10

13–6

012

-57

TO-2

47, D

3PAK

, T-M

AX, T

O-2

64, I

SOTO

P

APTx

xM60

xxAP

TxxF

80xx

600

0.37

–0.0

5536

–84

19-8

4TO

-247

, D3P

AK, T

-MAX

, TO

-264

, ISO

TOP

APTx

xM50

xxAP

TxxF

50xx

500

0.24

–0.0

3656

–103

24-1

03TO

-247

, D3P

AK, T

-MAX

, TO

-264

, ISO

TOP

www.microchip.com66

Pow

er D

iscr

etes

: Low

-Vol

tage

Pow

er M

OS

V® M

OSF

ETs/

FRED

FETs

MO

SFET

Par

t Num

ber

FRED

FET

Part

Num

ber

BVD

SS (V

)R

ds(o

n)M

ax (Ω

)Id

(A)

Id (A

)Pa

ckag

e St

yle

APT3

0Mxx

xxRx

APT3

0Mxx

xxFR

x30

00.

085–

0.01

940

–130

48–1

30TO

-247

, D3P

AK, I

SOTO

PAP

T20M

xxxx

RxAP

T20M

xxxx

FRx

200

0.04

5–0.

011

56–1

7556

–175

TO-2

47, D

3PAK

, T-M

AX®, T

O-2

64, I

SOTO

P

Pow

er D

iscr

etes

: Ultr

a-Fa

st, M

OS7

® M

OSF

ETs

MO

SFET

Par

t Num

ber

BVD

SS (V

)R

ds(o

n)M

ax (Ω

)Id

(A)

FRED

FET

Part

Num

ber

Pack

age

Styl

e

APT1

20xx

xxLL

x12

004.

700-

0.57

03.

5–22

APT1

20xx

xFLL

xTO

-247

, D3P

AK, T

-MAX

®

APT1

00xx

xxLL

x10

000.

900-

0.21

012

–37

APT1

00xx

xFLL

xTO

-247

, D3P

AK, T

-MAX

, TO

-264

, ISO

TOP

APT8

0xxx

xLLx

800

0.20

0-0.

140

33–5

2AP

T80x

xxFL

LxTO

-247

, D3P

AK, T

-MAX

, TO

-264

, ISO

TOP

APT5

0xxx

xLLx

500

0.14

0-0.

038

35–8

8AP

T50x

xxFL

LxTO

-247

, D3P

AK, T

-MAX

, TO

-264

, ISO

TOP

Pow

er D

iscr

etes

: Ultr

a-fa

st, M

OS

7R M

OSF

ET

MO

SFET

Par

t Num

ber

BVD

SS (V

)R

ds(o

n)M

ax (Ω

)Id

(A)

Pack

age

Styl

e

APT3

6N90

BC3G

900

0.12

36TO

-247

APTx

xN80

xxC3

G80

00.

450–

0.14

511

–34

TO-2

47, T

-MAX

®, T

O-2

64

APTx

xN65

xxCx

x65

00.

070–

0.03

547

–94

TO-2

47, D

3PAK

, T-M

AX, T

O-2

64

APTx

xN60

xxCx

x60

00.

125–

0.03

530

–106

TO-2

47, D

3PAK

, T-M

AX, T

O-2

64, I

SOTO

P

Pow

er D

iscr

etes

: Lin

ear M

OSF

ETs

Part

Num

ber

BVD

SS (V

)R

ds(o

n)M

ax (Ω

)Id

(A)

SOA

(W)

APL6

02xx

x60

00.

125

43–4

932

5

APL5

02xx

x50

00.

9052

–58

325

Pow

er D

iscr

etes

: Sili

con

and

Silic

on C

arbi

de D

iode

s

Serie

sVo

ltage

Rat

ings

Feat

ures

Appl

icat

ions

Com

men

t

D20

0, 3

00, 4

00, 6

00, 1

000,

120

0M

ediu

m V

f, M

ediu

m s

peed

Free

whe

eling

dio

de, O

utpu

t rec

tifier

, DC–

DC c

onve

rter

Prop

rieta

ry p

latin

um p

roce

ssD

Q60

0, 1

000,

120

0Hi

gh s

peed

, Ava

lanch

e ra

ted

PFC,

Fre

ewhe

eling

dio

de, D

C–DC

con

verte

rSt

eppe

d EP

I impr

oves

sof

tnes

s Pr

oprie

tary

plat

inum

pro

cess

Scho

ttky

200

Low

Vf,

Avala

nche

rate

dO

utpu

t rec

tifier

, Fre

ewhe

eling

dio

de, D

C–DC

con

verte

rAP

L602

xxx

SiC

Sch

ottk

y70

0, 1

200,

170

0Ze

ro re

vers

e re

cove

ryPF

C, F

reew

heeli

ng d

iode

, DC–

DC c

onve

rter

Low

sw

itchi

ng lo

sses

, hig

h po

wer

den

sity

and

high

-tem

pera

ture

ope

ratio

n

Pow

er D

iscr

etes

: Hig

h-Vo

ltage

RF

MO

SFET

s

Part

Num

ber

Pout

(W)

Freq

.(MH

z)Pa

ckag

e St

yle

Cla

ss o

f Ope

ratio

nC

omm

ents

ARFx

xxxx

xx90

–750

25–1

20TO

-247

, M17

4, T

O-2

64, T

3A, T

3, T

3C, T

1, T

2A–

ETh

e AR

F fa

mily

of R

F po

wer

MO

SFET

s is

optim

ized

for a

ppli-

catio

ns re

quirin

g fre

quen

cies

as h

igh

as 1

50 M

Hz a

nd o

pera

t-ing

vol

tage

s as

hig

h as

400

V

VRFx

xxxx

xx30

–600

30–1

75M

113,

M17

4, M

177,

M20

8, T

2–

The

VRF

fam

ily o

f RF

MO

SFET

s in

clude

s im

prov

ed re

plac

emen

ts fo

r ind

ustry

-sta

ndar

d RF

tran

sisto

rs. T

hey

prov

ide

impr

oved

rugg

edne

ss b

y in

crea

sing

the

Bvds

s ov

er 3

0 pe

rcen

t fro

m th

e in

dust

ry-s

tan-

dard

125

V to

170

V m

inim

um

DR

Fxxx

xxxx

400–

2000

30T2

B, T

4, T

4A, T

5D-

ETh

e DR

F fa

mily

of R

F so

lutio

ns in

tegr

ate

drive

rs, b

ypas

s ca

pacit

ors

and

RF M

OSF

ETs

into

a s

ingl

e pa

ckag

e

Focus Product Selector Guide 67

Pow

er M

odul

es: S

tand

ard

Con

figur

atio

ns

Elec

tric

al T

opol

gyIG

BT

600V

to 1

700V

MO

SFET

75

V to

120

0VD

IOD

E 20

0V to

170

0VM

ix S

i–Si

C

600V

to 1

200V

SiC

DIO

DE

600V

to 1

200V

SiC

MO

SFET

60

0V to

170

0VPa

ckag

es

Asym

met

rical

Brid

ge50

A to

300

A64

A to

207

A–

––

–SP

1, S

P3F,

SP4,

SP6

Boos

t buc

k10

0A70

A–

––

–SP

3F

Boos

t and

Buc

k C

hopp

er30

A to

600

A17

A to

370

A–

15A

to 1

07A

–50

A an

d 10

0ASO

T–22

7, S

P1, S

P3F,

SP4,

SP

6, D

3C

omm

on A

node

––

400A

––

–SP

6C

omm

on C

atho

de–

–40

0A–

100A

to 6

00A

–D1

P, S

P6D

ual b

oost

and

Buc

k C

hopp

er50

A to

90A

17A

to 1

00A

–40

A–

–SP

1, S

P3F

Dua

l Com

mon

Sou

rce

50A

to 6

00A

45A

to 3

70A

––

––

SP4,

SP6

Dua

l Dio

de–

––

–20

A to

100

A–

SOT–

227

Full

Brid

ge20

A to

300

A6A

to 2

07A

30A

to 2

00A

–20

A to

200

A11

0ASO

T–22

7, S

P1, S

P2, S

P3F,

SP4,

SP6

Full

Brid

ge W

ith P

FC38

A29

A an

d 38

A–

38A

––

SP3F

Full

Brid

ge W

ith F

ast

Rec

tifier

Dio

de B

ridge

38A

and

50A

29A

and

38A

–38

A–

–SP

3F

Full

brid

ge W

ith S

erie

s an

d Pa

ralle

l Dio

des

–13

A to

62A

–11

A to

38A

––

SP4

Inte

rleav

ed P

FC–

38A

and

70A

––

––

SP1,

SP3

FLi

near

Sin

gle

and

Dua

l Sw

itch

–14

A an

d 33

A–

––

–SP

1, S

P3F

Phas

e Le

g30

A to

600

A25

A to

370

A40

0A–

100A

to 6

00A

40A

to 5

86A

SP1,

SP2

, SP3

F, SP

4, S

P6,

SP6L

I, D1

P, D

3Ph

ase

Leg

With

Gat

e D

river

300A

to 4

00A

––

––

–LP

8Ph

ase

Leg

With

PFC

–27

A an

d 38

A–

––

–SP

3FPh

ase

Leg

With

Ser

ies

and

Para

llel D

iode

s–

26A

to 2

25A

–21

A to

110

A–

–SP

4, S

P6

Sing

le s

witc

h40

0A to

750

A97

A to

640

A40

0A to

500

A–

––

SP6,

D4,

LP4

Sing

le S

witc

h W

ith S

erie

s an

d Pa

ralle

l Dio

des

–86

A to

310

A–

86A

and

110A

––

SP6

Sing

le S

witc

h W

ith S

erie

s D

iode

s47

5A11

0A to

160

A–

––

–SP

6

3–Le

vel N

PC In

vert

er20

A to

300

A30

A to

75A

––

–20

A to

160

ASP

1, S

P3F,

SP6

3–Le

vel T

–Typ

e In

vert

er40

A to

200

A–

––

–20

A an

d 50

ASP

3F, S

P63–

Phas

e Br

idge

30A

to 7

5A–

–40

A an

d 90

A50

A–

SP1,

SP3

FTr

iple

Dua

l Com

mon

Sou

rce

50A

to 1

50A

21A

and

54A

––

––

SP6–

PTr

iple

Pha

se L

eg30

A to

150

A17

A to

100

A–

50A

and

87A

–55

A to

150

ASP

3F, S

P6–P

www.microchip.com68

Hi R

el D

iscr

ete

Solu

tions

(HR

DS)

Pro

duct

Por

tfolio

Prod

uct

Fam

ilyTy

pePo

larit

yR

ated

Vol

tage

Rat

ed C

urre

ntR

ated

Pow

erM

ax T

j (o C

)Pa

ckag

eQ

ual L

evel

CH

IP

Avai

labi

lity

RAD

HAR

D

Avai

labi

lity

Bipolar Transistor

Pow

er T

rans

istor

NPN/

PNP

40V

to 7

60V

0.2A

to 5

0A0.

75W

to 3

00W

150

to 2

00M

etal/

Cera

mic

- TO

's a

nd L

CC's

MIL

-PRF

-195

00 u

p to

JAN

Son

Sele

cton

Sele

ctDa

rlingt

on T

rans

istor

NPN/

PNP

40V

to 4

50V

5A to

20A

1W to

175

W17

5 to

200

Met

al - T

O's

MIL

-PRF

-195

00 u

p to

JAN

TXV

on S

elect

on S

elect

Small

Sig

nal T

rans

istor

NPN/

PNP,

Sin

gles

, Du

als a

nd Q

uads

10V

to 4

50V

0.01

A to

3A

0.15

W to

5W

175

to 2

00M

etal/

Cera

mic

- TO

's, L

CC's

FP

and

DIP'

sM

IL-P

RF-1

9500

up

to J

ANS

on S

elect

on S

elect

Small

Sig

nal R

F Tr

ansis

tor

NPN/

PNP

12V

to 3

0V0.

03 to

0.0

4A0.

2W to

1W

200

Met

al/Ce

ram

ic - T

O's

and

LCC

'sM

IL-P

RF-1

9500

up

to J

ANS

on S

elect

on S

elect

Field Effect Transistor

JFET

P, N

and

Mat

ched

30V

to 5

0V0.

0015

A to

0.1

75A

0.3W

to 0

.5W

175

to 2

00M

etal/

Cera

mic

- TO

's a

nd L

CC's

To b

e Q

ualifi

edon

Sele

cton

Sele

ct

MO

SFET

'sN

Chan

nel

100V

to 2

50V

12.4

A to

56A

75W

to 2

50W

150

Met

al/Ce

ram

ic - T

O's

and

LCC

'sTo

be

Qua

lified

on S

elect

Yes

Diode

Small

Sig

nal D

iode

sPN

, Sin

gles

and

Dua

ls50

V to

225

V0.

075A

to 0

.3A

175

to 2

00G

lass

- DO

's a

nd M

etal/

Cera

mic

- LCC

'sM

IL-P

RF-1

9500

up

to J

ANS

on S

elect

Not A

pplic

able

Rect

ifier

PN, S

ingl

es,D

uals,

St

acke

d, B

ridge

50V

to 1

600V

0.12

A to

300

A15

0 to

200

Glas

s/M

etal

- DO

's a

nd M

etal/

Cera

mic

- LCC

'sM

IL-P

RF-1

9500

up

to J

ANS

on S

elect

Not A

pplic

able

High

Vol

tage

Rec

tifier

PN S

ingl

e an

d St

acke

d10

00V

to

3000

V0.

1A17

5G

lass

- DO

'sM

IL-P

RF-1

9500

up

to J

ANTX

Not A

pplic

able

Not A

pplic

able

Pow

er S

chot

tky

N an

d N

Dual

15V

to 1

50V

3A to

150

A12

5 to

150

Met

al/Ce

ram

ic - T

O's

, LCC

's, T

hinK

eyM

IL-P

RF-1

9500

up

to J

ANS

on S

elect

Not A

pplic

able

Small

Sig

nal S

chot

tky

- He

rmet

icN

and

N Du

al20

V to

100

V0.

033A

to 1

A12

5 to

150

Glas

s - D

O's

and

Met

al/Ce

ram

ic - L

CC's

MIL

-PRF

-195

00 u

p to

JAN

Son

Sele

ctNo

t App

licab

le

Small

Sig

nal S

chot

tky

- No

n He

rmet

icN

and

N Du

al20

V to

100

V0.

033A

to 1

A12

5 to

150

Plas

tic -

DO's

, Pow

erM

iteUp

to M

X lev

elon

Sele

ctNo

t App

licab

le

Regulators/TVS

TVS

- Her

met

icUn

ipol

ar a

nd B

ipol

ar5V

to 1

85V

1.7A

to 4

40A

500W

to 5

000W

175

Glas

s/M

etal

- DO

's a

nd C

eram

ic - T

hinK

eyM

IL-P

RF-1

9500

up

to J

ANS

on S

elect

Not A

pplic

able

TVS

- Non

Her

met

icUn

ipol

ar a

nd B

ipol

ar5V

to 1

85V

1.7A

to 4

40A

500W

to 5

000W

175

Plas

tic -

DO's

, Pow

erM

ite a

nd P

LAD

Up to

MX

level

on S

elect

Not A

pplic

able

Volta

ge R

egul

ator

(Zen

er)

PN1.

8V to

390

V0.

0004

6A to

12.

4A

0.5W

to 5

0W17

5G

lass/

Met

al - D

O's

and

Met

al - T

O's

MIL

-PRF

-195

00 u

p to

JAN

Son

Sele

ctNo

t App

licab

leTe

mpe

ratu

re

Com

pens

ated

Zen

ers

PN/N

P6.

2V to

49.

6V0.

0005

A to

0.0

1Ato

0.5

W10

0 to

175

Glas

s - D

O's

MIL

-PRF

-195

00 u

p to

JAN

Son

Sele

cton

Sele

ct

Curre

nt R

egul

ator

sJF

ET50

V to

100

V0.

0002

A to

0.0

1A0.

5W17

5G

lass

- DO

'sM

IL-P

RF-1

9500

up

to J

ANS

on S

elect

Not A

pplic

able

Modules

Arra

ys a

nd B

ridge

sPN

and

Arra

ys60

V to

100

0V0.

3A to

25A

0.5W

and

up

150

DIP'

s an

d Ep

oxy

Fille

d Ca

ses

MIL

-PRF

-195

00 u

p to

JAN

TXNo

t App

licab

leNo

t App

licab

le

Mot

or a

nd A

ctua

tor D

rives

Part

Num

ber

Prod

uct

Des

crip

tion

Pow

er

ratin

g (k

VA)

Nom

inal

Hig

h Vo

ltage

Inpu

t (V

)

Nom

inal

Low

Vo

ltage

Inpu

t (V

)

Nom

. O

utpu

t C

urre

nt (A

)

Max

. Out

put

Cur

rent

(A)

Pow

er

Arch

itect

ure

Sem

icon

duct

or

Tech

nolo

gyO

pera

ting

Tem

p.

Ran

ge (°

C)

Dim

ensi

ons

(mm

)Pa

ckag

e

MAI

CM

MC

40X1

20A

PCM

510

Pow

er C

ore

Mod

ule

(PCM

) with

telem

etry

m

onito

ring,

con

trol,

com

mun

icatio

ns, p

ower

br

idge

and

fully

inte

grat

ed g

ate

drive

554

015

12.5

253-

phas

e br

idge

SiC

MO

SFET

or

Si IG

BT–5

5 to

+11

010

5 x

85 x

30

Righ

t-ang

le co

nnec

tor

MAI

CM

MC

40X1

20B

PCM

510

Pow

er C

ore

Mod

ule

(PCM

) with

telem

etry

m

onito

ring,

con

trol,

com

mun

icatio

ns, p

ower

br

idge

and

fully

inte

grat

ed g

ate

drive

554

015

12.5

253-

phas

e br

idge

SiC

MO

SFET

or

Si IG

BT–5

5 to

+11

010

5 x

85 x

30

Stra

ight

co

nnec

tor

MAI

PDM

C40

X120

AHP

D510

Hybr

id P

ower

Driv

e (H

PD) w

ith p

ower

brid

ge

and

fully

inte

grat

ed g

ate

drive

554

015

12.5

253-

phas

e br

idge

SiC

MO

SFET

or

Si IG

BT–5

5 to

+11

0 1

05 x

85

x 25

Scre

w

term

inals

MAI

PDM

C40

X120

CHP

D520

Hybr

id P

ower

Driv

e (H

PD) w

ith p

ower

brid

ge

and

fully

inte

grat

ed g

ate

drive

554

015

12.5

253-

phas

e br

idge

SiC

MO

SFET

or

Si IG

BT–5

5 to

+11

092

x 8

2 x

19So

lder

ed p

ins

Rad

iatio

n H

arde

ned

Pow

er S

uppl

ies

Part

Num

ber

Prod

uct

Des

crip

tion

Pow

er ra

ting

(W)

Nom

inal

Vol

tage

In

put (

V)O

utpu

tsEffi

cien

cyN

om. O

utpu

t C

urre

nt (A

)R

adia

tion

Pow

er

Arch

itect

ure

Feat

ures

Ope

ratin

g Te

mp.

Ran

ge

(°C)

Dim

ensi

ons

(mm

)W

eigh

t

SA50

-120

-5S

SA S

eries

DC

- DC

Con

verte

rsSp

ace

grad

e no

n-hy

brid

DC-

DC C

onve

rter S

ingl

e O

utpu

t50

120

Sing

le 3.

3V

to 2

8V85

%2A

to10

A10

0kRa

dFo

rwar

d Co

nver

ter

Enab

le; S

ync;

Ad

just

; Par

allel

–55

to +

105

2 x

3 x

0.5

110

gm

SA50

-120

-5-

15T

SA S

eries

DC

- DC

Con

verte

rsSp

ace

grad

e no

n-hy

brid

DC-

DC C

onve

rter T

riple

Out

put

5012

0Tr

iple

(Dua

l) 3.

3V to

28V

85%

1A to

10A

100k

Rad

Forw

ard

Conv

erte

rEn

able;

Syn

c –5

5 to

+10

52

x 3

x 0.

511

0 gm

Focus Product Selector Guide 69

Inte

grat

ed P

ower

Sol

utio

ns: R

elay

s

Hermatically Sealed Power Relays

# of Poles

Latch/Non–Latch

Suppressed Coils Available

Space grade Avialable per NASA EEE–INST–002

Con

tact

Rat

ing

@28

VD

C o

r 115

V 40

0 H

z

Coil AC/DC Coil

DC Coil Voltages (V)

Pull–in power (mW)

Contact Resistance (Ohms)

Insulation Resistance @500 Vdc

Dielectric @Vac

Temperature Rating (°C)

Design to meet or exceed MIL–PRF Reference

Term

inal

opt

ions

Dimensions in Inches less mounting Brackets (L x Wx H)

Resistive Load (ohms)

Inductive Load (ohms)

Motor Load (ohms)

Low Level 10–50 μA @ 10–50 mv

Gold Plated plug–in

Solder pin

3 long pins

Solder Hook

BR10

2PDT

Non–

latch

No1

––

XDC

6, 1

2, 1

8, 2

610

00.

050Ω

10 K

MΩ

250–

500

65–1

25M

IL–P

RF–3

9016

üü

üü

0.5

x 0.

24 x

0.4

BR13

2PDT

Non–

latch

No2–

3–5

––

XDC

6, 1

2, 2

6, 1

1540

, 100

, 250

0.

050Ω

10 K

MΩ

500–

1000

65–1

25M

IL–P

RF–3

9016

–ü

ü0.

81 x

0.4

1 x

0.90

BR15

4PD

TNo

n–lat

chü

5–7.

5–10

1.75

–2.5

–3.5

–X

115

VAC/

DC6,

12,

26,

115

400,

500

, 10

000.

010Ω

10 K

MΩ

1000

–125

065

–125

MIL

–PRF

–390

16ü

ü–

ü1

x 1

x 1.

3

BR19

2PDT

Non–

latch

No5,

7.5

, 10

1.75

–2.5

–3.5

–X

115

VAC/

DC6,

12,

26,

48,

115

175,

500

0.01

0Ω10

K M

Ω10

00–1

250

65–1

25M

IL–P

RF–3

9016

üü

ü–

1.08

x 0

.52

x 1.

3

BR20

2PDT

Latc

hNo

103.

54

XDC

6, 1

2, 2

6, 4

8, 1

1513

0, 2

500.

010Ω

10 K

MΩ

1000

–125

065

–125

MIL

–PRF

–390

16ü

ü–

ü1.

08 x

0.5

2x 1

.3

BR23

4PD

TLa

tch

ü10

3.5

4X

DC6,

12,

26,

48,

115

250,

500

0.01

0Ω10

K M

Ω50

0–12

5065

–125

MIL

–PRF

–390

16ü

ü–

ü1

x 1

x 1.

3

BR24

2PDT

Non–

latch

Yes

No10

3.5

4X

DC6,

12,

26

400

0.01

0Ω10

K M

Ω50

0–10

0065

–125

MIL

–PRF

–390

16ü

ü–

ü1.

02 x

0.5

2 x

0.89

BR26

2PDT

Non–

latch

No2

––

XDC

6, 1

2, 2

625

00.

050Ω

10 K

MΩ

500–

1000

65–1

25M

IL–P

RF–3

9016

üü

–ü

0.81

x 0

.4 x

0.4

1

BR24

62P

DTNo

n–lat

chYe

sü

108

2.5

–11

5 VA

C/DC

6, 1

2, 2

8, 4

850

00.

010Ω

100

MΩ

1000

–125

065

–125

MIL

–PRF

–835

36ü

üü

ü1.

03 x

.53

x 1.

01

BR24

72P

DTLa

tch

Yes

ü10

82.

5–

115

VAC/

DC6,

12,

28,

49

500

0.01

0Ω10

0 M

Ω10

00–1

250

65–1

25M

IL–P

RF–8

3536

üü

üü

1.03

x.5

3 x

1.01

BR23

0 4

PDT

Non–

latch

Yes

ü10

82.

5–

115

VAC/

DC6,

12,

28,

50

500

0.01

0Ω10

0 M

Ω10

00–1

250

65–1

25M

IL–P

RF–8

3536

üü

–ü

1.03

x 1

.0 3

x 1.

01

BR23

1 4

PDT

Latc

hYe

sü

108

2.5

–11

5 VA

C/DC

6, 1

2, 2

8, 5

150

00.

010Ω

100

MΩ

1000

–125

065

–125

MIL

–PRF

–835

36ü

ü–

ü1.

03 x

1.0

3 x

1.01

BR25

02P

DTNo

n–lat

chYe

sü

2515

5–

115

VAC/

DC6,

12,

28,

52

500

0.00

6Ω10

0 M

Ω10

00–1

250

65–1

25M

IL–P

RF–8

3536

üü

–ü

1.03

x.5

3 x

1.01

BR24

6–SX

XX2P

DTNo

n–lat

chYe

s–

108

2.5

–11

5 VA

C/DC

6, 1

2, 2

8, 4

850

00.

010Ω

100

MΩ

1000

–125

040

–200

MIL

–PRF

–835

36–

ü–

ü1.

03 x

0.5

3 x

1.01

BR25

0–SX

XX2P

DTNo

n–lat

chYe

s–

2515

5–

115

VAC/

DC6,

12,

28,

52

500

0.00

6Ω10

0 M

Ω10

00–1

250

40–2

00M

IL–P

RF–8

3536

–ü

–ü

1.03

x 0

.53

x 1.

01

Inte

grat

ed P

ower

Sol

utio

ns: R

emot

e Po

wer

Con

trol

lers

Remote Power Controllers

#of Poles

Latch/Non-Latch

Con

tact

Rat

ing

@28

VD

C o

r 115

V 40

0 H

z

Coil AC/DC Coil

Contac Voltage Drop at Rated Current

Insulation Resistance @500 Vdc

Dielectric @Vac

MIL-PRF Reference

Opt

ions

Bi-Directional

Temperature Rating

Features

Resistive Load (ohms)

Motor Load (ohms)

Factory Current Trip Currents

Factory Current Trip Times

Adjusted to Customers Specifications

Auxiliary Switch

701

SPST

M

agne

tic

Latc

hing

5–20

0 Am

ps

@ 2

8 VD

C5–

200

Amps

@ 2

8 VD

C28

VDC

.225

mv

100

MΩ

1350

–150

0M

IL-P

RF-8

3383

üü

üü

ü–5

5ºC

to 8

5ºC

1500

wat

ts o

f Pea

k Po

wer

Diss

ipat

ion

trans

ient s

uppr

essio

n70

2SP

ST

Mag

netic

La

tchi

ng

5–20

0 Am

ps

@ 2

8 VD

C or

11

5/20

8V 4

00 H

z

5–20

0 Am

ps @

28

VDC

or

115/

208V

400

Hz

28 V

DC o

r 115

VAC

40

0 HZ

.225

mv

100

MΩ

1350

–150

0M

IL-P

RF-8

3383

üü

üü

ü–5

5ºC

to 8

5ºC

703

3PST

Mag

netic

La

tchi

ng

Mag

netic

La

tchi

ng5–

150

Amps

@

115

/208

V 40

0 Hz

5–15

0 Am

ps

@ 1

15/2

08V

400

Hz28

VDC

or 1

15 V

AC

400

HZ.2

25 m

v 10

0 M

Ω13

50–1

500

MIL

-PRF

-833

83ü

üü

ü

–55º

C to

85º

C

www.microchip.com70

PoE

PSE

ICs

Prod

uct

Des

crip

tion

Prod

uct

Type

Stan

dard

s Su

ppor

ted

Port

s2-

Pair

Pow

er4-

Pair

Pow

erM

axim

um

Cur

rent

PoE

Cla

ss

(0-8

)

PoE

Type

(1

-4)

FETs

Sens

e R

esis

tor

Ope

ratin

g Te

mpe

ratu

rePo

E C

ontr

olle

rH

ost

Inte

rfac

eTe

mpe

ratu

re

Gra

dePa

ckag

e Ty

pePa

ckag

e C

arrie

r

PD69

101I

LQ-T

RIE

EE 8

02.3

at s

ingl

e po

rt Po

E PS

E co

ntro

ller +

man

ager

, ind

ustri

al te

mp

PSE

Man

ager

IEEE

802

.3af

IE

EE 8

02.3

at1

36.2

5WNA

0.72

5A0-

41-

2In

tern

al 0.

3ΩEx

tern

al 0.

5Ω–4

0°C

to 8

5°C

Auto

mod

eSe

rial

mon

itorin

gIn

dust

rial

24 Q

FN

4 m

m x

5

mm

Tape

and

reel

PD69

104B

1ILQ

-TR

IEEE

802

.3at

/ UP

oE, 4

por

ts P

SE

cont

rolle

r + m

anag

erPS

E M

anag

er

IEEE

802

.3af

IE

EE 8

02.3

at

Dual-

IEEE

802

.3at

UP

oE

436

W72

W0.

725A

0-4

1-2

Inte

rnal

0.3Ω

Exte

rnal

0.36

Ω–4

0°C

to 8

5°C

Auto

mod

eI²C

UA

RTCo

mm

ercia

l48

QFN

8

mm

x 8

mm

Tape

and

reel

PD69

104B

1FIL

Q-T

RIE

EE 8

02.3

at /

UPoE

, 4 p

orts

PSE

co

ntro

ller +

man

ager

PSE

Man

ager

IEEE

802

.3af

IE

EE 8

02.3

at

Dual-

IEEE

802

.3at

UP

oE

436

W72

W0.

725A

0-4

1-2

Inte

rnal

0.3Ω

Exte

rnal

0.36

Ω–4

0°C

to 8

5°C

Auto

mod

eI²C

UA

RTCo

mm

ercia

l48

QFN

8

mm

x 8

mm

Tape

and

reel

PD69

108I

LQ-T

RIE

EE 8

02.3

at /

UPoE

/ Po

H, 8

por

ts P

SE

cont

rolle

r + m

anag

erPS

E M

anag

er

IEEE

802

.3af

IE

EE 8

02.3

at

UPoE

Po

H

850

W10

0W1A

0-4

1-2

Inte

rnal

0.3Ω

Exte

rnal

0.36

Ω–4

0°C

to 8

5°C

PD69

100

/ M

arve

ll ISS

RI²C

UA

RTIn

dust

rial

48 Q

FN 8

m

m x

8 m

mTa

pe a

nd re

el

PD69

200X

-GG

GG

IEEE

802

.3bt

/ UP

oE /

PoH

PoE

cont

rolle

rPo

E Co

ntro

ller

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

UP

oE

PoH

96NA

NANA

NANA

NANA

–40°

C to

85°

CNA

I²C

UART

Indu

stria

l32

QFN

5

mm

x 5

mm

Tray

PD69

204T

4ILQ

-TR

-LE

IEEE

802

.3bt

Typ

e 4

/ UPo

E / P

oH, 4

po

rts, f

ully

inte

grat

ed P

SE m

anag

er,

indu

stria

l tem

p

PSE

Man

ager

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

UP

oE

PoH

447

.5W

95W

0.94

A0-

81-

4In

tern

al 0.

2ΩIn

tern

al 0.

1Ω–4

0°C

to 8

5°C

PD69

200

/ PD

6921

0 /

Mar

vell I

SSR

NAIn

dust

rial

56 Q

FN 8

m

m x

8 m

mTa

pe a

nd re

el

PD69

208M

ILQ

-TR

-LE

IEEE

802

.3bt

Typ

e 3

/ UPo

E / P

oH, 8

po

rts, f

ully

inte

grat

ed P

SE m

anag

er,

indu

stria

l tem

p

PSE

Man

ager

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

UP

oE

PoH

835

.7W

71.4

W0.

627A

0-6

1-3

Inte

rnal

0.2Ω

Inte

rnal

0.1Ω

–40°

C to

85°

CPD

6920

0 /

PD69

210

/ M

arve

ll ISS

RNA

Indu

stria

l56

QFN

8

mm

x 8

mm

Tape

and

reel

PD69

208T

4ILQ

-TR

-LE

IEEE

802

.3bt

Typ

e 4

/ UPo

E / P

oH, 8

po

rts, f

ully

inte

grat

ed P

SE m

anag

er,

indu

stria

l tem

p

PSE

Man

ager

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

UP

oE

PoH

847

.5W

95W

0.94

A0-

81-

4In

tern

al 0.

2ΩIn

tern

al 0.

1Ω–4

0°C

to 8

5°C

PD69

200

/ PD

6921

0 /

Mar

vell I

SSR

NAIn

dust

rial

56 Q

FN 8

m

m x

8 m

mTa

pe a

nd re

el

PD69

210X

-GG

GG

IEEE

802

.3bt

/ UP

oE /

PoH

PoE

cont

rolle

rPo

E Co

ntro

ller

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

UP

oE

PoH

96NA

NANA

NANA

NANA

–40°

C to

85°

CNA

I²C

UART

Indu

stria

l32

QFN

5

mm

x 5

mm

Tray

Focus Product Selector Guide 71

PoE

PSE

EVBs

Prod

uct

Des

crip

tion

Prod

uct

Type

Stan

dard

s Su

ppor

ted

Num

ber o

f Po

rts

2-Pa

ir Po

wer

4-Pa

ir Po

wer

PoE

Cla

ss

(0-8

)Po

E Ty

pe

(1-4

)

PD-P

SE

Pow

er

Forw

ardi

ngH

ost I

nter

face

Feat

ured

PD-IM

-740

1IE

EE 8

02.3

at, D

ual-p

ort P

SE E

VB fe

atur

ing

PD69

101

PSE

ICIE

EE 8

02.3

af

IEEE

802

.3at

236

WNA

0-4

1-2

NoSe

rial

PD69

101

PD-IM

-750

4BIE

EE 8

02.3

at/U

PoE,

4 p

orts

PSE

EVB

feat

urin

g PD

6910

4B1

PSE

ICIE

EE 8

02.3

af

IEEE

802

.3at

436

W72

W0-

41-

2No

I²C

UART

PD69

104B

1

PD-IM

-760

4-4M

HIE

EE 8

02.3

at/b

t Typ

e 3,

4 x

2-p

air +

4 x

4-P

air p

orts

PSE

EV

B fe

atur

ing

PD69

208M

and

PD6

9200

, LED

stre

am s

uppo

rt PS

E IC

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

835

.7W

71.4

W0-

61-

3No

USB

(PC)

PD69

208M

PD

6920

0

PD-IM

-760

4-4T

4HIE

EE 8

02.3

at/b

t Typ

e 4,

4 x

2-p

air +

4 x

4-P

air p

orts

PSE

EV

B fe

atur

ing

PD69

208T

4, P

D692

04T4

and

PD6

9200

, LED

st

ream

sup

port

PSE

IC

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

Po

H

847

.5W

95W

0-8

1-4

NoUS

B (P

C)PD

6920

8T4

PD69

204T

4 PD

6920

0

PD-IM

-760

8MIE

EE 8

02.3

at/b

t Typ

e 3,

8 p

orts

PSE

EVB

feat

urin

g PD

6920

8M a

nd P

D692

00, L

ED s

tream

sup

port

PSE

ICIE

EE 8

02.3

af

IEEE

802

.3at

IE

EE 8

02.3

bt8

35.7

W71

.4W

0-4

1-2

NoUS

B (P

C)PD

6920

8M

PD69

200

PD-IM

-760

8M-2

IEEE

802

.3 a

t/bt T

ype

3, 2

PoE

Inpu

ts a

nd 8

PSE

por

ts o

ut

EVB

PSE

EVB

feat

urin

g PD

6920

8M, P

D692

00, P

D702

24

Idea

lBrid

ge™

and

PD7

0211

PD

ICs

PSE

ICIE

EE 8

02.3

af

IEEE

802

.3at

IE

EE 8

02.3

bt8

35.7

W71

.4W

0-6

1-3

Yes

I²C

USB

(PC)

SP

I (In

tern

al Us

e)

PD69

208M

PD

6920

0

PD70

224

PD70

211

PD-IM

-761

8T4

IEEE

802

.3 a

t/bt T

ype

3, e

ight

2-p

air p

orts

PSE

EVB

feat

urin

g PD

6920

8T4

and

PD69

210,

LED

stre

am s

uppo

rt PS

E IC

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

830

WUA

RT

USB

PD69

208T

4 PD

6921

0

PD-IM

-761

8T4H

IEEE

802

.3 a

t/bt T

ype

4, e

ight

4-p

air p

orts

PSE

EVB

feat

urin

g PD

6920

8T4

and

PD69

210,

LED

stre

am s

uppo

rt PS

E IC

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

890

WUA

RT

USB

PD69

208T

4 PD

6921

0

PoE

PD IC

s

Prod

uct

Des

crip

tion

Prod

uct

Type

Stan

dard

s Su

ppor

ted

IC T

ype

PoE

Type

PoE

Cla

ssO

utpu

t Po

wer

Max

imum

C

urre

nt

Max

imum

C

hann

el

Res

ista

nce

Ope

ratin

g Te

mpe

ratu

re

(°C)

Tem

pera

ture

G

rade

Inte

grat

ed

PWM

C

ontr

olle

rPa

ckag

e Ty

pePa

ckag

e C

arrie

r

PD70

100I

LD-T

RIE

EE 8

02.3

af T

ype

1, P

D Fr

ont-e

nd IC

w/

inte

rnal

0.6

Ohm

FET

PD IC

IEEE

802

.3af

PD fr

ont e

ndAF

Typ

e 1

1-3

15.4

W0.

45A

0.6Ω

–40

to +

85In

dust

rial

No12

DFN

4

mm

x 3

mm

Tape

and

reel

PD70

101I

LQ-T

RIE

EE 8

02.3

af T

ype

1, P

D fro

nt-e

nd a

nd P

WM

co

ntro

ller I

C w

/inte

rnal

0.6

Ohm

FET

PD IC

IEEE

802

.3af

PD fr

ont e

nd +

PW

M c

ontro

ller

AF T

ype

11-

315

.4W

0.45

A0.

6Ω–4

0 to

+85

Indu

stria

lYe

s32

QFN

5

mm

x 5

mm

Tape

and

reel

PD70

200I

LD-T

RIE

EE 8

02.3

at T

ype

2, P

D fro

nt-e

nd IC

w/

inte

rnal

0.6

Ohm

FET

PD IC

IEEE

802

.3af

IE

EE 8

02.3

at

Dua

l-IEE

E 80

2.3a

tPD

fron

t end

AT T

ype

21-

447

W1.

2A0.

6Ω–4

0 to

+85

Indu

stria

lNo

12-D

FN

4 m

m x

3 m

mTa

pe a

nd re

el

PD70

201I

LQ-T

RIE

EE 8

02.3

at T

ype

2, P

D fro

nt-e

nd a

nd P

WM

co

ntro

ller I

C w

/inte

rnal

0.6

Ohm

FET

PD IC

IEEE

802

.3af

IE

EE 8

02.3

at

Dua

l-IEE

E 80

2.3a

t

PD fr

ont e

nd +

PW

M c

ontro

ller

AT T

ype

21-

447

W1.

2A0.

6Ω–4

0 to

+85

Indu

stria

lYe

s32

QFN

5

mm

x 5

mm

Tape

and

reel

PD70

210I

LD-T

RIE

EE 8

02.3

at T

ype

2 / P

oH P

D fro

nt-e

nd IC

w

/inte

rnal

0.3

Ohm

FET

PD IC

IEEE

802

.3af

IE

EE 8

02.3

at

Dual-

IEEE

802

.3at

Po

H

PD fr

ont e

ndAT

Typ

e 2/

Po

H1-

495

W2A

0.3Ω

–40

to +

85In

dust

rial

No16

DFN

5

mm

x 4

mm

Tape

and

reel

PD70

210A

ILD

-TR

IEEE

802

.3at

Typ

e 2

/ PoH

PD

front

-end

IC

w/in

tern

al 0.

3 O

hm F

ET a

nd W

all A

dapt

er

supp

ort

PD IC

IEEE

802

.3af

IE

EE 8

02.3

at

Dual-

IEEE

802

.3at

Po

H

PD fr

ont e

ndAT

Typ

e 2/

Po

H1-

495

W2A

0.3Ω

–40

to +

85In

dust

rial

No16

DFN

5

mm

x 4

mm

Tape

and

reel

PD70

211I

LQ-T

RIE

EE 8

02.3

at T

ype

2 / P

oH P

D fro

nt-e

nd a

nd

PWM

con

trolle

r IC

w/in

tern

al 0.

3 O

hm F

ETPD

IC

IEEE

802

.3af

IE

EE 8

02.3

at

Dual-

IEEE

802

.3at

Po

H

PD F

ront

end

+

PWM

con

trolle

rAT

Typ

e 2/

Po

H1-

495

W2A

0.3Ω

–40

to +

85In

dust

rial

Yes

36 Q

FN

6 m

m x

6 m

mTa

pe a

nd re

el

PD70

224I

LQ-T

RIE

EE 8

02.3

at/b

t Typ

e 2

/ PoH

Idea

lBrid

ge™

du

al M

OSF

ET-b

ridge

rect

ifier

PoE

Idea

lBrid

ge

IEEE

802

.3af

IE

EE 8

02.3

at

IEEE

802

.3bt

Po

H

Idea

l dio

de b

ridge

AT/B

T Ty

pe 2

/P

oH1-

895

W2A

0.76

Ω–4

0 to

+85

Indu

stria

lNA

40 Q

FN

6 m

m x

8 m

mTa

pe a

nd re

el

www.microchip.com72

PoE

PD E

VBs

Prod

uct

Des

crip

tion

Prod

uct T

ype

Stan

dard

s Su

ppor

ted

IC U

sed

Pow

erPo

E C

lass

(1

-8)

PoE

Type

(1

-4)

Out

put

Volta

geO

utpu

t C

urre

nt

PD-P

SE

Pow

er

Forw

ardi

ng

Dio

de

Brid

ge

Auxi

liary

Po

wer

Pr

iorit

yTo

polo

gy

PD70

100E

VB15

BIE

EE 8

02.3

af/b

t Typ

e 1

PD E

VB fe

atur

ing

PD70

100

w/3

ou

tput

vol

tage

sPD

EVB

IEEE

802

.3af

IE

EE 8

02.3

atPD

7010

015

W3

1

12V

0.6A

NoSt

anda

rdYe

sBu

ck3.

3V2A

1.8V

0.6A

PD70

101E

VB3F

IEEE

802

.3af

/bt T

ype

1 PD

EVB

feat

urin

g PD

7010

1 w

/iso

lated

flyb

ack

conv

erte

r, 3.

3V 1

Amp

outp

ut

PD E

VBIE

EE 8

02.3

af

IEEE

802

.3at

PD70

101

3.3W

31

3.3V

1ANo

Stan

dard

Yes

Flyb

ack

PD70

101E

VB6F

IEEE

802

.3af

/bt T

ype

1 PD

EVB

feat

urin

g PD

7010

1 w

/iso

lated

flyb

ack

conv

erte

r, 5V

1.2

Amp

outp

utPD

EVB

IEEE

802

.3af

IE

EE 8

02.3

atPD

7010

16W

31

5V1.

2ANo

Stan

dard

Yes

Flyb

ack

PD70

101E

VB15

F-5

IEEE

802

.3af

/bt T

ype

1 PD

EVB

feat

urin

g PD

7010

1 w

/iso

lated

flyb

ack

conv

erte

r, 5V

2.6

Amp

outp

ut

PD E

VBIE

EE 8

02.3

af

IEEE

802

.3at

PD70

101

13W

31

5V2.

6ANo

Stan

dard

Yes

Flyb

ack

PD70

101E

VB15

F-12

IEEE

802

.3af

/bt T

ype

1 PD

EVB

feat

urin

g PD

7010

1 w

/iso

lated

flyb

ack

conv

erte

r, 12

V 1.

1Am

p ou

tput

PD

EVB

IEEE

802

.3af

IE

EE 8

02.3

atPD

7010

113

.2W

31

12V

1.1A

NoSt

anda

rdYe

sFl

ybac

k

PD70

201E

VB25

F-3

IEEE

802

.3at

/bt T

ype

2 PD

EVB

feat

urin

g PD

7020

1 w

/iso

lated

flyb

ack

conv

erte

r, 3.

3V 7

.5A

outp

ut

PD E

VBIE

EE 8

02.3

af

IEEE

802

.3at

PD70

201

25W

42

3.3V

7.5A

NoId

eal

NoFl

ybac

k

PD70

201E

VB25

F-5

IEEE

802

.3at

/bt T

ype

2 PD

EVB

feat

urin

g PD

7020

1 w

/iso

lated

flyb

ack

conv

erte

r, 5V

5Am

p ou

tput

PD

EVB

IEEE

802

.3af

IE

EE 8

02.3

atPD

7020

125

W4

25V

5ANo

Idea

lNo

Flyb

ack

PD70

201E

VB25

F-12

IEEE

802

.3at

/bt T

ype

2 PD

EVB

feat

urin

g PD

7020

1 w

/iso

lated

flyb

ack

conv

erte

r, 12

V 2.

1Am

p ou

tput

PD

EVB

IEEE

802

.3af

IE

EE 8

02.3

atPD

7020

125

W4

212

V2.

1ANo

Idea

lNo

Flyb

ack

PD70

201E

VB25

F-D

-5IE

EE 8

02.3

at/b

t Typ

e 2

PD C

ompa

ct E

VB fe

atur

ing

PD70

201

w/ i

solat

ed fl

ybac

k co

nver

ter,

5V 5

Amp

outp

ut

PD E

VBIE

EE 8

02.3

af

IEEE

802

.3at

PD70

201

25W

42

5V5A

NoId

eal

Yes

Flyb

ack

PD70

201E

VB25

FW-3

Dual-

IEEE

802

.3at

Typ

e 2

(4 p

air) P

D EV

B fe

atur

ing

PD70

201,

4 p

air s

uppl

y w

/isol

ated

For

war

d co

nver

ter,

3.3V

7.

5A o

utpu

t PD

EVB

IEEE

802

.3af

IE

EE 8

02.3

atPD

7020

125

W4

23.

3V7.

5ANo

Idea

lYe

sAc

tive

clam

p fo

rwar

d

PD70

201E

VB47

F IE

EE 8

02.3

at/b

t Typ

e 2

PD E

VB fe

atur

ing

PD70

201

w/

isolat

ed fl

ybac

k co

nver

ter,

12V

4Am

p ou

tput

PD

EVB

IEEE

802

.3af

IE

EE 8

02.3

atPD

7020

148

W4

212

V4A

NoId

eal

Yes

Flyb

ack

PD70

201E

VB-U

-25F

-5IE

EE 8

02.3

at/b

t Typ

e 2

PD E

VB fe

atur

ing

PD70

201

w/

isolat

ed fl

ybac

k co

nver

ter,

5V 5

Amp

outp

ut, 1

7-54

V In

put

rang

e PD

EVB

IEEE

802

.3af

IE

EE 8

02.3

atPD

7020

125

W4

25V

5ANo

Stan

dard

Yes

Flyb

ack

PD70

211E

VB50

FW-3

Dual-

IEEE

802

.3at

/bt T

ype

2/Po

H PD

EVB

feat

urin

g PD

7021

1, 4

pair

sup

ply

w/is

olat

ed F

orw

ard

conv

erte

r, 3.

3V

15A

outp

utPD

EVB

IEEE

802

.3af

IE

EE 8

02.3

at

PoH

PD70

211

50W

42

3.3V

15A

NoId

eal

Yes

Activ

e cla

mp

forw

ard

PD70

211E

VB50

FW-5

Dual-

IEEE

802

.3at

/bt T

ype

2/Po

H PD

EVB

feat

urin

g PD

7021

1, 4

pair

sup

ply

w/is

olat

ed F

orw

ard

conv

erte

r, 5V

10

A ou

tput

PD

EVB

IEEE

802

.3af

IE

EE 8

02.3

at

PoH

PD70

211

50W

42

5V10

ANo

Idea

lYe

sAc

tive

clam

p fo

rwar

d

PD70

211E

VB51

F-12

Dual-

IEEE

802

.3at

/bt T

ype

2/Po

H PD

EVB

feat

urin

g PD

7021

1, 4

pair

sup

ply

w/is

olat

ed F

orw

ard

conv

erte

r, 12

V 4.

17A

outp

ut

PD E

VBIE

EE 8

02.3

af

IEEE

802

.3at

Po

HPD

7021

151

W4

212

V4.

25A

NoId

eal

Yes

Flyb

ack

PD70

211E

VB72

FW-1

2Du

al-IE

EE 8

02.3

at/b

t Typ

e 2/

PoH

PD E

VB fe

atur

ing

PD70

211,

4 p

air s

uppl

y w

/isol

ated

For

war

d co

nver

ter,

12V

6A o

utpu

t PD

EVB

IEEE

802

.3af

IE

EE 8

02.3

at

PoH

PD70

211

72W

42

12V

6ANo

Idea

lYe

sAc

tive

clam

p fo

rwar

d

PD70

224E

VBDu

al IE

EE 8

02.3

at/b

t Typ

e 2/

PoH

PD E

VB fe

atur

ing

PD70

210

PD a

nd P

D702

24 Id

ealB

ridge

™

PD E

VBIE

EE 8

02.3

af

IEEE

802

.3at

Po

H

PD70

210

PD

7022

472

W4

2NA

NANo

Idea

lNo

NA

PD70

224E

VB-

wAu

xPw

rDu

al IE

EE 8

02.3

at/b

t Typ

e 2/

PoH

PD E

VB fe

atur

ing

PD70

210A

PD

and

PD70

224

Idea

lBrid

gePD

EVB

IEEE

802

.3af

IE

EE 8

02.3

at

PoH

PD70

210A

PD

7022

472

W4

2NA

NANo

Idea

lYe

sNA

Focus Product Selector Guide 73

PoE

Syst

ems

Prod

uct

Des

crip

tion

Ope

ratin

g En

viro

nmen

tPo

wer

Per

Po

rtN

umbe

r of

Port

sD

ata

Rat

eM

anag

edIn

put P

ower

Pa

ckag

e Ty

pe

PD-3

501G

C/A

C-X

X1

port,

15.

4W, I

EEE

802.

3af-c

ompl

iant i

ndoo

r PoE

mid

span

Indo

or15

.4W

11G

NoAC

Stan

dalo

ne U

nit

PD-3

504G

/AC

-XX

4 po

rts, 1

5.4W

, IEE

E 80

2.3a

f-com

plian

t ind

oor P

oE m

idsp

anIn

door

15.4

W4

1GNo

ACSt

anda

lone

uni

tPD

-651

2G/A

C/M

-XX

12 p

orts

, 15.

4W, I

EEE

802.

3af-c

ompl

iant i

ndoo

r PoE

mid

span

, man

aged

Indo

or15

.4W

121G

Yes

ACSt

anda

lone

uni

tPD

-652

4G/A

C/M

/F-X

X24

por

ts, 1

5.4W

, IEE

E 80

2.3a

f-com

plian

t ind

oor P

oE m

idsp

an, m

anag

edIn

door

15.4

W24

1GYe

sAC

Stan

dalo

ne u

nit

PD-9

001G

C/A

C-X

X1

port,

30W

, IEE

E 80

2.3a

t-com

plian

t ind

oor P

oE m

idsp

anIn

door

30W

11G

NoAC

Stan

dalo

ne U

nit

PD-9

001-

10G

C/A

C-X

X1

port,

30W

, IEE

E 80

2.3a

t-com

plian

t ind

oor P

oE m

idsp

an w

ith 1

0G d

ata

rate

Indo

or30

W1

1GNo

ACSt

anda

lone

Uni

tPD

-900

1GR/

SP/A

C-X

X1

port,

30W

, IEE

E 80

2.3a

t, in

door

PoE

mid

span

with

sur

ge p

rote

ctio

nIn

door

30W

11G

NoAC

Stan

dalo

ne u

nit

PD-9

004G

/AC

-XX

4 po

rts, 3

0W, I

EEE

802.

3at-c

ompl

iant i

ndoo

r PoE

mid

span

Indo

or30

W4

1GNo

ACSt

anda

lone

uni

tPD

-900

6G/A

CD

C/M

-XX

6 po

rts, 3

0W, I

EEE

802.

3at-c

ompl

iant,

indo

or P

oE m

idsp

an, m

anag

edIn

door

30W

61G

Yes

AC a

nd D

CSt

anda

lone

uni

tPD

-901

2G/A

CD

C/M

-XX

12 p

orts

, 30W

, IEE

E 80

2.3a

t-com

plian

t, in

door

PoE

mid

span

, man

aged

Indo

or30

W12

1GYe

sAC

and

DC

Stan

dalo

ne u

nit

PD-9

024G

/AC

DC

/M-X

X24

por

ts, 3

0W, I

EEE

802.

3at-c

ompl

iant,

indo

or P

oE m

idsp

an, m

anag

edIn

door

30W

241G

Yes

AC a

nd D

CSt

anda

lone

uni

tPD

-950

1GC

/AC

-XX

1 po

rt, 6

0W, I

EEE

802.

3bt-c

ompl

iant i

ndoo

r PoE

mid

span

Indo

or60

W1

1GNo

ACSt

anda

lone

uni

tPD

-950

1-10

GC

/AC

-XX

1 po

rt, 6

0W, I

EEE

802.

3bt-c

ompl

iant i

ndoo

r PoE

mid

span

with

10G

dat

a ra

teIn

door

60W

11G

NoAC

Stan

dalo

ne u

nit

PD-9

501G

/48V

DC

-XX

1 po

rt, 6

0W, I

EEE

802.

3at c

ompl

iant i

ndoo

r PoE

mid

span

Indo

or60

W1

1GNo

DCSt

anda

lone

uni

tPD

-950

1GR/

SP/A

C-X

X1

port,

60W

, IEE

E 80

2.3a

t-com

plian

t ind

oor P

oE m

idsp

an w

ith s

urge

pro

tect

ion

Indo

or60

W1

1GNo

ACSt

anda

lone

uni

tPD

-950

1GC

S/AC

-XX

1 po

rt, 6

0W, I

EEE

802.

3bt-c

ompl

iant P

oE m

edia

conv

erte

r to

exte

nd e

xistin

g ne

twor

k di

stan

ce w

ith fi

ber c

ablin

gIn

door

60W

11G

NoAC

Stan

dalo

ne u

nit

PD-9

506G

C/A

C-X

X6

ports

, 60W

, IEE

E 80

2.3b

t-com

plian

t, in

door

EEP

oE m

idsp

an, m

anag

edIn

door

60W

61G

Yes

ACSt

anda

lone

uni

tPD

-951

2GC

/AC

-XX

12 p

orts

, 60W

, IEE

E 80

2.3b

t-com

plian

t, in

door

EEP

oE m

idsp

an, m

anag

edIn

door

60W

121G

Yes

AC a

nd D

CSt

anda

lone

uni

tPD

-952

4GC

/AC

-XX

24 p

orts

, 60W

, IEE

E 80

2.3b

t-com

plian

t, in

door

EEP

oE m

idsp

an, m

anag

edIn

door

60W

241G

Yes

AC a

nd D

CSt

anda

lone

uni

tPD

-960

1GC

/AC

-XX

1 po

rt, 9

0W, I

EEE

802.

3bt-c

ompl

iant i

ndoo

r por

t PoE

mid

span

Indo

or90

W1

1GNo

ACSt

anda

lone

uni

tPD

-960

6GC

/AC

-XX

6 po

rts, 9

0W, I

EEE

802.

3bt-c

ompl

iant i

ndoo

r PoE

mid

span

, man

aged

Indo

or90

W6

1GYe

sAC

Stan

dalo

ne u

nit

PD-9

612G

C/A

C-X

X12

por

ts, 9

0W, I

EEE

802.

3bt-c

ompl

iant i

ndoo

r PoE

mid

span

, man

aged

Indo

or90

W12

1GYe

sAC

and

DC

Stan

dalo

ne u

nit

PD-9

624G

C/A

C-X

X24

por

ts, 9

0W, I

EEE

802.

3bt-c

ompl

iant i

ndoo

r PoE

mid

span

, man

aged

Indo

or90

W24

1GYe

sAC

and

DC

Stan

dalo

ne u

nit

PDS-

408G

/AC

-XX

8+3

ports

, 90W

, IEE

E 80

2.3b

t-com

plian

t, fa

nles

s Po

E sw

itch

for d

igita

l ceil

ing,

man

aged

In

door

90W

8+3

1GYe

sAC

Stan

dalo

ne u

nit

PD-9

001G

CO

/AC

1 po

rt , 3

0W, I

EEE

802.

3at-c

ompl

iant,

IP67

out

door

PoE

mid

span

with

ext

ende

d te

mpe

ratu

re ra

nge

Out

door

30W

11G

NoAC

Stan

dalo

ne u

nit

PD-9

501G

CO

/AC

1 po

rt , 6

0W, I

EEE

802.

3bt-c

ompl

iant,

IP67

out

door

PoE

mid

span

with

ext

ende

d te

mpe

ratu

re ra

nge

Out

door

60W

11G

NoAC

Stan

dalo

ne u

nit

PDS-

104G

O/A

C/M

-IN4

ports

, 60W

, out

door

PoE

sw

itch

with

sur

ge p

rote

ctio

n an

d in

tern

atio

nal p

ower

cor

d, m

anag

edO

utdo

or60

W4

1GYe

sAC

Stan

dalo

ne u

nit

PDS-

104G

O/A

C/M

-NA

4 po

rts, 6

0W, o

utdo

or P

oE s

witc

h w

ith s

urge

pro

tect

ion

and

North

Am

erica

pow

er c

ord,

man

aged

Out

door

60W

41G

Yes

ACSt

anda

lone

uni

tPD

-960

1GO

/AC

1 po

rt, 9

0W, I

EEE

802.

3at-c

ompl

iant,

outd

oor P

oE m

idsp

an w

ith s

urge

pro

tect

ion

Out

door

90W

11G

NoAC

Stan

dalo

ne u

nit

PD-9

001G

CI/D

C1

port,

30W

, IEE

E 80

2.3a

t-com

plian

t ind

ustri

al gr

ade

PoE

mid

span

Indu

stria

l30

W1

1GNo

DCSt

anda

lone

uni

tPD

-950

1GC

I/DC

F1

port,

60W

, IEE

E 80

2.3b

t-com

plian

t ind

ustri

al gr

ade

PoE

mid

span

Indu

stria

l60

W1

1GNo

DCSt

anda

lone

uni

tPD

-AS-

951/

12-2

4Si

ngle

port

PoE

splitt

er fo

r con

tem

pora

ry d

evice

s un

able

to a

ccep

t pow

er v

ia Et

hern

etIn

door

54W

11G

PoE

Stan

dalo

ne u

nit

PD-P

OE-

EXTE

ND

ERSi

ngle

port

PoE

exte

nder

to e

xten

d Et

hern

et n

etw

ork

rang

e be

yond

100

mIn

door

30W

11G

DCSt

anda

lone

uni

tPD

-OU

T/SP

11Si

ngle

port

PoE

surg

e pr

otec

tor f

or E

ther

net n

etw

orks

with

out

door

PoE

mid

span

s an

d po

wer

ed d

evice

sO

utdo

or1

1GDC

Stan

dalo

ne u

nit

PoE

Test

erPo

E te

ster

to te

st R

J-45

for P

oEIn

door

1GPo

ESt

anda

lone

uni

t

XX In

dica

tes

pow

er c

ord

code

: EU

(Eur

ope)

, UK

(uni

ted

King

dom

), US

(Nor

th A

mer

ica),

BR (B

razil

), JP

(Jap

an),

AU (A

ustra

lia)

www.microchip.com74

Touc

h an

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Ges

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Con

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aciti

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tiona

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ityIn

terf

ace

Safe

ty c

ertifi

ed T

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VD

E/U

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730

clas

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I²C/G

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I²C/G

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SPI/G

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SPI/G

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omat

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pens

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pens

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bas

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pacit

ance

com

pens

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nü

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0–3.

616

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CAP

1166

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slide

r, re

set,

alert,

aut

omat

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libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I²C/S

PI3.

0–3.

620

QFN

CAP

1128

82

slide

r, re

set,

alert,

aut

omat

ic ca

libra

tion,

bas

e ca

pacit

ance

com

pens

atio

nü

I²C/S

PI3.

0–3.

620

QFN

CAP

1188

88

slide

r, re

set,

alert,

aut

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libra

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bas

e ca

pacit

ance

com

pens

atio

nü

I²C/S

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0–3.

624

QFN

CAP

1114

1411

slide

r, re

set,

alert,

aut

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libra

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bas

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pacit

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com

pens

atio

nü

I²C3.

0–3.

632

QFN

CAP

1203

3–

alert,

aut

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libra

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bas

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pacit

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com

pens

atio

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5.0

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1293

3–

alert,

aut

omat

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libra

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bas

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pacit

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com

pens

atio

nü

I²CQ

FN

OTN

Pro

cess

ors

Prod

uct

Des

crip

tion

Max

Ban

dwid

th

Gbp

sLi

ne R

ates

Clie

nt In

terf

aces

Max

SER

DES

R

ate

Gbp

sO

DU

k Sw

itchi

ngSy

stem

In

terf

aces

OTN

En

cryp

tion

RoH

S

PM54

20Hy

PHY-

20G

OTN

Pro

cess

or40

OTU

2G

bE/F

C/SD

H/SO

NET/

OTU

k/Vi

deo

11Ye

s (O

DU1+

)In

terla

ken

–ü

PM54

26Hy

PHY-

10G

OTN

Pro

cess

or20

OTU

2G

bE/F

C/SD

H/SO

NET/

OTU

k/Vi

deo

11Ye

s (O

DU1+

)In

terla

ken

–ü

PM54

40DI

GI-1

20G

OTN

Pro

cess

or24

0O

TU2/

OTU

3/O

TU4

GbE

/FC/

SDH/

SONE

T/O

TUk

11Ye

s (O

DU0+

)In

terla

ken

–ü

PM54

41DI

GI-6

0G O

TN P

roce

ssor

120

OTU

2/O

TU3

GbE

/FC/

SDH/

SONE

T/O

TUk

28Ye

s (O

DU0+

)In

terla

ken

–ü

PM54

50Hy

PHY-

20G

flex

OTN

Pro

cess

or40

OTU

2G

bE/F

C/SD

H/SO

NET/

OTU

k/Vi

deo

11Ye

s (O

DU0+

)In

terla

ken

–ü

PM54

51Hy

PHY-

AXS

OTN

Pro

cess

or40

OTU

2G

bE/F

C/SD

H/SO

NET/

OTU

k/Vi

deo

11Ye

s (O

DU0+

)–

–ü

Focus Product Selector Guide 75

OTN

Pro

cess

ors

Prod

uct

Des

crip

tion

Max

Ban

dwid

th

Gbp

sLi

ne R

ates

Clie

nt In

terf

aces

Max

SER

DES

R

ate

Gbp

sO

DU

k Sw

itchi

ngSy

stem

In

terf

aces

OTN

En

cryp

tion

RoH

S

PM54

56Hy

PHY-

10G

flex

OTN

Pro

cess

or20

OTU

2G

bE/F

C/SD

H/SO

NET/

OTU

k/Vi

deo

11Ye

s (O

DU0+

)In

terla

ken

–ü

PM59

80DI

GI-1

00G

X O

TN P

roce

ssor

200

OTU

2/O

TU3/

OTU

4G

bE/F

C/SD

H/SO

NET/

OTU

k28

Yes

(ODU

0+)

Inte

rlake

nü

ü

PM59

81DI

GI-1

00G

X O

TN P

roce

ssor

(with

out e

ncry

ptio

n)20

0O

TU2/

OTU

3/O

TU4

GbE

/FC/

SDH/

SONE

T/O

TUk

28Ye

s (O

DU0+

)In

terla

ken

–ü

PM59

90DI

GI-G

4 O

TN P

roce

ssor

Fam

ily80

0O

TU2/

OTU

3/O

TU4

GbE

/FC/

SDH/

SONE

T/O

TUk

28Ye

s (O

DU0+

)In

terla

ken

üü

PM59

91DI

GI-G

4 O

TN P

roce

ssor

(with

out e

ncry

ptio

n)80

0O

TU2/

OTU

3/O

TU4

GbE

/FC/

SDH/

SONE

T/O

TUk

28Ye

s (O

DU0+

)In

terla

ken

–ü

PM60

10DI

GI-G

5 O

TN P

roce

ssor

Fam

ily12

00O

TU2/

OTU

4/O

TUCn

GbE

/FC/

OTU

k/Fl

exO

56Ye

s (O

DU0+

)In

terla

ken

üü

PM60

11DI

GI-G

5 O

TN P

roce

ssor

(with

out e

ncry

ptio

n)12

00O

TU2/

OTU

4/O

TUCn

GbE

/FC/

OTU

k/Fl

exO

56Ye

s (O

DU0+

)In

terla

ken

–ü

OTN

PH

Ys

Prod

uct

Des

crip

tion

# Po

rts /

Rate

sO

TN L

ine

Rate

sEt

hern

et L

ine

Rate

sM

ax S

ERD

ES R

ates

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D2 1

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hou

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D2 1

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hou

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Smar

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67 m

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-pro

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D2 1

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hou

rs 1

2 G

bps

Smar

ROC

3100

2 (×

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Low

-pro

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D2 1

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hou

rs 1

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Smar

ROC

3100

1 (×

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Gen

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35 H

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67 m

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Low

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file, M

D2 2

.73M

hou

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Smar

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2100

6 (×

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Low

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D2 2

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Smar

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2100

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ours

12

Gbp

s Sm

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Gen

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Smar

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Low

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D2 1

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Smar

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Gbp

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Adap

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, MD2

2.7

3M h

ours

12

Gbp

s Sm

artIO

C 21

00 6

(×4)

SFF

-864

3NA

NA

NA

Adap

tec

HBA

11

00-4

i 22

9340

0-R

12 G

bps

PCIe

Gen

3

SAS/

SATA

Hos

t Bus

Ad

apte

r 4

inte

rnal

8-L

ane

PCIe

Gen

3NA

2.5

35 H

× 5

.2 L

(64

mm

× 1

32.0

8 m

m)

Low

-pro

file, M

D2 >

1.4M

hou

rs 1

2 G

bps

Smar

tIOC

2100

1 (×

4) S

FF-8

643

NA N

A N

A

Adap

tec

HBA

11

00-8

e22

9330

0-R

12 G

bps

PCIe

Gen

3

SAS/

SATA

Hos

t Bus

Ad

apte

r 8

ext

erna

l 8

-Lan

e PC

Ie G

en 3

NA 2

.535

H ×

6.6

L (6

4 m

m ×

167

mm

) L

ow-p

rofile

, MD2

1.3

8M h

ours

12

Gbp

s Sm

artIO

C 21

00 2

(×4)

SFF

-864

4NA

NA

NA

Adap

tec

HBA

11

00-8

i 22

9320

0-R

12 G

bps

PCIe

Gen

3

SAS/

SATA

Hos

t Bus

Ad

apte

r 8

inte

rnal

8-L

ane

PCIe

Gen

3NA

2.5

35 H

× 6

.6 L

(64

mm

× 1

67 m

m)

Low

-pro

file, M

D2 1

.36M

hou

rs 1

2 G

bps

Smar

tIOC

2100

2 (×

4) S

FF-8

643

NA N

A N

A

Adap

tec

HBA

11

00-8

i8e

2293

700-

R12

Gbp

s PC

Ie G

en 3

SA

S/SA

TA H

ost B

us

Adap

ter

8 in

tern

al 8

exte

rnal

8-L

ane

PCIe

Gen

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2.5

35 H

× 6

.6 L

(64

mm

× 1

67 m

m)

Low

-pro

file, M

D2 2

.73M

hou

rs 1

2 G

bps

Smar

tIOC

2100

2 (×

4) S

FF-8

643/

2

(×4)

SFF

-864

4NA

NA

NA

Switc

htec

PSX

, PFX

, PAX

Gen

3, G

en 4

Dev

ice

Com

paris

on

Switchtec™ PFX 96xG3

Switchtec™ PFX 80xG3

Switchtec™ PFX 64xG3

Switchtec™ PFX 48xG3

Switchtec™ PFX 32xG3

Switchtec™ PFX 24xG3

Switchtec™ PFX -L 96xG3

Switchtec™ PFX-L 80xG3

Switchtec™ PFX-L 64xG3

Switchtec™ PFX-L 48xG3

Switchtec™ PFX-L 32xG3

Switchtec™ PFX-L 24xG3

Switchtec™ PFX -I 96xG3

Switchtec™ PFX-I 80xG3

Switchtec™ PFX-I 64xG3

Switchtec™ PFX-I 48xG3

Switchtec™ PFX-I 32xG3

Switchtec™ PFX-I 24xG3

Lane

s96

8064

4832

2496

8064

4832

2496

8064

4832

24Po

rts48

4032

2416

1224

2016

128

648

4032

2416

12Po

rt Bi

furc

atio

nx2

/4/8

/16

x2/4

/8/1

6x2

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x2/4

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6x2

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x2/4

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6x4

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6x4

/8/1

6x4

/8/1

6x4

/8/1

6x4

/8/1

6x4

/8/1

6x2

/4/8

/16

x2/4

/8/1

6x2

/4/8

/16

x2/4

/8/1

6x2

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TBs

4840

3224

1612

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ny p

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2 (a

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2 (a

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2 (a

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2 (a

ny p

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2 (a

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4840

3224

1612

Virtu

al S

witc

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2420

1612

86

66

66

43

2420

1612

86

PCIe

Mul

ticas

tYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

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sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sD

owns

tream

Por

t C

onta

inm

ent

Yes

Yes

Yes

Yes

Yes

Yes

NoNo

NoNo

NoNo

Yes

Yes

Yes

Yes

Yes

Yes

Com

plet

ion

Tim

eout

Sy

nthe

sis

Yes

Yes

Yes

Yes

Yes

Yes

NoNo

NoNo

NoNo

Yes

Yes

Yes

Yes

Yes

Yes

UEC

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

Hot

Plu

g C

trls

4840

3224

1612

66

66

66

4840

3224

1612

Cus

tom

er

Prog

ram

mab

leNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

No

Mul

ti-ho

st I/

O S

harin

gNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoPC

Ie F

abric

Sup

port

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

DM

ANo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

No

www.microchip.com78

Switc

htec

PSX

, PFX

, PAX

Gen

3, G

en 4

Dev

ice

Com

paris

on

Switchtec™ PFX 96xG3

Switchtec™ PFX 80xG3

Switchtec™ PFX 64xG3

Switchtec™ PFX 48xG3

Switchtec™ PFX 32xG3

Switchtec™ PFX 24xG3

Switchtec™ PFX -L 96xG3

Switchtec™ PFX-L 80xG3

Switchtec™ PFX-L 64xG3

Switchtec™ PFX-L 48xG3

Switchtec™ PFX-L 32xG3

Switchtec™ PFX-L 24xG3

Switchtec™ PFX -I 96xG3

Switchtec™ PFX-I 80xG3

Switchtec™ PFX-I 64xG3

Switchtec™ PFX-I 48xG3

Switchtec™ PFX-I 32xG3

Switchtec™ PFX-I 24xG3

Encl

osur

e M

gmt

Proc

esso

r + S

DK

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

Ethe

rnet

10

/100

10/1

0010

/100

NoNo

NoNo

NoNo

NoNo

No10

/100

10/1

0010

/100

NoNo

NoI²C

Mas

ter/S

lave

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Pack

age

Size

(mm

2)37

.5

37.5

37

.5

27

27

27

37.5

37

.5

37.5

27

27

27

37

.5

37.5

37

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27

27

27

Tem

p0,

105

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105

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105

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105

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j)-4

0 (Ta

) to

105

(Tj)

-40

(Ta) t

o 10

5 (T

j)Ro

HS

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Switc

htec

PSX

, PFX

, PAX

Gen

3, G

en 4

Dev

ice

Com

paris

on

Switchtec™ PFX 96xG4

Switchtec PFX 80xG4

Switchtec PFX 64xG4

Switchtec PFX 48xG4

Switchtec PFX 32xG4

Switchtec PFX 24xG4

Switchtec PFX 100xG4

Switchtec PFX 84xG4

Switchtec PFX 68xG4

Switchtec PFX 52xG4

Switchtec PFX 36xG4

Switchtec PFX 28xG4

Lane

s96

8064

4832

2410

084

6852

3628

Ports

4840

3224

1612

5244

3628

2016

Port

Bifu

rcat

ion

x2/4

/8/1

6x2

/4/8

/16

x2/4

/8/1

6x2

/48/

16x2

/4/8

/16

x2/4

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6x1

/x2/

4/8/

16x1

/x2/

4/8/

16x1

/x2/

4/8/

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4032

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1248

4234

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hes

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86

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Yes,

64

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s pe

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Yes,

64

over

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per

stac

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4 ov

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r st

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Yes,

64

over

lays

per

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sYe

sYe

sYe

sYe

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Dow

nstre

am P

ort

Con

tain

men

tYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

s

Com

plet

ion

Tim

eout

Syn

thes

isYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

s

UEC

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

Hot

Plu

g C

trls

4840

3224

1612

5244

3628

2016

Cus

tom

er

Prog

ram

mab

leNo

NoNo

NoNo

NoNo

NoNo

NoNo

No

Mul

ti-ho

st I/

O

Shar

ing

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

PCIe

Fab

ric

Supp

ort

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

DM

ANo

NoNo

NoNo

NoYe

sYe

sYe

sYe

sYe

sYe

s

Encl

osur

e M

gmt

Proc

esso

r + S

DK

NoNo

NoNo

NoNo

NoNo

NoNo

NoNo

Ethe

rnet

(M)

Yes

Yes

Yes

NoNo

No10

/100

10/1

0010

/100

NoNo

No

I²C M

aste

r/Sla

veYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

sYe

s

Pack

age

Size

(m

m)

40x4

040

x40

40x4

029

x29

29x2

929

x29

40x4

040

x40

40x4

029

x29

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929

x29

Tem

p0,

105

0, 1

050,

105

0, 1

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105

0, 1

050,

105

0, 1

050,

105

0, 1

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05

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sYe

sYe

sYe

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ly Eg

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devic

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not a

vaila

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on G

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hes

4 AC

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Focus Product Selector Guide 79

Term

s an

d D

efini

tions

1 G

bps .

......

......

......

......

......

......

......

109 b

ytes

per

sec

ond

1 KB

......

......

......

......

......

......

......

......

......

......

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24 b

ytes

1 Kw

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......

......

......

......

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ords

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......

......

......

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......

......

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