fjaf6810

©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001

FJAF6810

NPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted

* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Electrical Characteristics TC=25°C unless otherwise noted

* Pulse Test: PW=20µs, duty Cycle=1% Pulsed

Thermal Characteristics TC=25°C unless otherwise noted

Symbol Parameter Rating UnitsVCBO Collector-Base Voltage 1500 VVCEO Collector-Emitter Voltage 750 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 10 AICP* Collector Current (Pulse) 20 APC Collector Dissipation 60 WTJ Junction Temperature 150 °CTSTG Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Conditions Min Typ Max UnitsICES Collector Cut-off Current VCB=1400V, RBE=0 1 mAICBO Collector Cut-off Current VCB=800V, IE=0 10 µAIEBO Emitter Cut-off Current VEB=4V, IC=0 1 mABVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 VhFE1hFE2

DC Current Gain VCE=5V, IC=1AVCE=5V, IC=6A

105 8

VCE(sat) Collector-Emitter Saturation Voltage IC=6A, IB=1.5A 3 VVBE(sat) Base-Emitter Saturation Voltage IC=6A, IB=1.5A 1.5 VtSTG* Storage Time VCC=200V, IC=6A, RL=33Ω

IB1=1.2A, IB2= - 2.4A3 µs

tF* Fall Time 0.2 µs

Symbol Parameter Typ Max UnitsRθjC Thermal Resistance, Junction to Case 2.08 °C/W

FJAF6810

High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1500V• High Switching Speed : tF(typ.) =0.1µs• For Color Monitor

TO-3PF11.Base 2.Collector 3.Emitter

©2001 Fairchild Semiconductor Corporation

FJAF6810

Rev. A2, May 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time

0 2 4 6 8 10 12 140

2

4

6

8

10IB=2.0A

IB=0.6A

IB=0.4A

IB=0.2A

I C [A

], C

OLL

ECTO

R C

UR

REN

T

VCE [V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10 1001

10

100

VCE = 5V

Ta = 1250C Ta = 250C

Ta = - 250C

h FE, D

C C

UR

REN

T G

AIN

IC [A], COLLECTOR CURRENT

0.1 1 100.01

0.1

1

10

100

IC = 5 IB

Ta = 1250C

Ta = 250C

Ta = - 250C

V CE(s

at) [

V], S

ATU

RAT

ION

VO

LTAG

E


0.1 1 100.01

0.1

1

10

IC = 3 IB

Ta = 1250C

Ta = 250C

Ta = - 250C

V C

E(sa

t) [V

], SA

TUR

ATIO

N V

OLT

AGE


0.0 0.2 0.4 0.6 0.8 1.0 1.20

2

4

6

8

10

12

14

VCE = 5V

- 250C250CTa = 1250C

I C [A

], C

OLL

ECTO

R C

UR

REN

T

VBE [V], BASE-EMITTER VOLTAGE

1 100.01

0.1

1

10

tF

tSTG

VCC = 200V,IC = 6A, IB1 = 1.2A

t STG &

t F[µs]

, SW

ITC

HIN

G T

IME

IB2 [A], REVERSE BASE CURRENT

©2001 Fairchild Semiconductor Corporation

FJAF6810

Rev. A2, May 2001

Typical Characteristics (Continued)

Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time

Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area

Figure 11. Power Derating

1 100.01

0.1

1

10

100

tF

tSTG

VCC = 200V,IC = 6A, IB2 = - 2.4A

t STG &

t F[µs]

, SW

ITC

HIN

G T

IME

IB1 [A], FORWARD BASE CURRENT

1 100.1

1

10

tF

tSTG

VCC = 200V,IB1 = 1.0A, IB2 = - 2.4A

t STG &

t F [µs

], SW

ITC

HIN

G T

IME


10 100 1000 10000

5

10

15

20

25

30

RB2 = 0, IB1 = 15AVCC = 30V, L = 200µH

VBE(off) = - 3V

VBE(off) = - 6V

1

I C [A

], C

OLL

EC

TOR

CU

RR

EN

T


1 10 100 1000 100000.01

0.1

1

10

100

TC = 25oCSigle Pulse

t = 100ms t = 10ms

t = 1ms

IC (Pulse)

IC (DC)

I C [A

], C

OLL

ECTO

R C

UR

REN

T


0 25 50 75 100 125 150 175 2000

10

20

30

40

50

60

70

80

P D [W

], PO

WER

DIS

SIPA

TIO

N

TC [oC], CASE TEMPERATURE

Package Demensions

©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001

FJAF6810

Dimensions in Millimeters

15.50 ±0.20 ø3.60 ±0.20

26.5

0 ±0

.20

4.50

±0.

20

10.0

0 ±0

.20

16.5

0 ±0

.20

10°

16.5

0 ±0

.20

22.0

0 ±0

.20

23.0

0 ±0

.20

1.50

±0.

20

14.5

0 ±0

.20

2.00

±0.

20

2.00 ±0.20

2.00 ±0.20

0.85 ±0.03

2.00 ±0.20

5.50 ±0.20

3.00 ±0.20

(1.50)

3.30 ±0.20

2.00 ±0.20

4.00 ±0.20

2.50

±0.

20

14.8

0 ±0

.20

3.30

±0.

20

2.00

±0.

20

5.50

±0.

20

0.75+0.20–0.10

0.90+0.20–0.10

5.45TYP[5.45 ±0.30]

5.45TYP[5.45 ±0.30]

TO-3PF

©2001 Fairchild Semiconductor Corporation Rev. H2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

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OPTOPLANAR™PACMAN™POP™PowerTrench®

QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER®

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