fga20n120ftdu igbt die - micross · 2014. 9. 26. · page 1 further information - contact your...

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Further Information - Contact your Micross sales office or email your enquiry to [email protected]

Part VCES ICn VCE (sat) Typ Die Size

FGA20N120FTDU 1200V 20A 1.59 5.0 x 5.0 mm2

See page 2 for ordering part numbers & supply formats

Symbol Parameter Ratings Units

VCES Collector to Emitter Voltage 1200 V

VGES Gate to Emitter Voltage ±25 V

IC Drain Current1 Continuous (TC = 25°C) 40 A

Continuous (TC = 100°C) 20 A

ICM Pulsed Collector Current 60 A

TJ, TSTG Operation Junction & Storage Temperature -55 to 150 °C

Symbol Parameter Test Conditions Min Typ Max Units

BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 1200 - - V

ICES Collector Cut-Off Current VCE = VCES , VGE = 0V - - 1 mA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA

FGA20N120FTDUField Stop Trench IGBT Chip

1200V, 20A, VCE(sat) = 1.59V

Applications

• Low / Medium Power Modules

• Welding & Drive Applications

Features

• Low Saturation Voltage

• Positive Temp Co-efficient for paralleling

• Tightened Parameter Distribution Maximum Ratings

On Characteristics, TJ = 25°C unless otherwise noted


VGE(th) G-E Threshold Voltage IC = 20mA, VCE = VGE 3.5 5.9 7.5 V

VCE(sat)

Collector to Emitter Saturation Voltage

IC = 20A, VGE = 15V - 1.59 2 V

IC = 20A, VGE = 15V

@ 125°C

- 1.85 - V

Static Characteristics, TJ = 25° unless otherwise noted

©2014 Fairchild Semiconductor Corporation & Micross Components

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Cies Input Capacitance

VCE = 30V, VGE = 0V

f = 1MHz

- 3080 -

pF

Coes Output Capacitance - 95 -

Cres Reverse Transfer Capacitance - 60 -

Qg Total Gate Charge

VCE = 600V, IC = 20A

VGE = 15V

- 137 -

nC Qge Gate to Emitter Charge - 23 -

Qgc Gate to Collector Charge - 65 -


td(on) Turn-On Delay Time

VCC = 600V, IC = 20A

RG = 10Ω, VGE = 15V

Resistive Load, TC = 25°C

- 30 - ns

tr Rise Time - 79 - ns

td (off) Turn-Off Delay Time - 143 - ns

tf Fall Time - 217 - ns

Eon Turn-On Switching Loss - 0.42 - mJ

Eoff Turn-Off Switching Loss - 0.71 - mJ

Ets Total Switching Loss - 1.13 - mJ

td (on) Turn-On Delay Time

VCC = 600V, IC = 20A

RG = 10Ω, VGE = 15V

Resistive Load, TC = 125°C

- 29 - ns

tr Rise Time - 93 - ns

td (off) Turn-Off Delay Time - 147 - ns

tf Fall Time - 259 - ns

Eon Turn-On Switching Loss - 0.47 - mJ

Eoff Turn-Off Switching Loss - 0.86 - mJ

Ets Total Switching Loss - 1.33 - mJ

Part Number Format Detail / Drawing

FGA20N120FTDUMW Un-sawn wafer, electrical rejects inked Page 3

FGA20N120FTDUMF Sawn wafer on film-frame Page 4

FGA20N120FTDUMD Singulated die / chips in waffle pack Page 4

Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request

Dynamic Characteristics2, TJ = 25°C unless otherwise noted

Switching Characteristics3, TJ = 25°C unless otherwise noted

Ordering Guide

Notes:

1. Performance will vary based on assembly technique and substrate choice

2. Defined by chip design, not subject to 100% production test at wafer level

3. Specified in discrete package for indicative purposes only, bare die performance will vary depending on

module design.

4.


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Parameter Units

Chip Dimensions Un-sawn 5000 x 5000 µm

Chip Thickness (Nominal) 75 µm

Gate Pad Size 568 x 359 µm

Wafer Diameter 150 (subject to change) mm

Saw Street 80 (subject to change) µm

Wafer orientation on frame Wafer notch parallel with frame flat

Topside Metallisation & Thickness Al 4 µm

Backside Metallisation & Thickness V/Ni/Ag 0.35 µm

Topside Passivation Silicon Nitride

Recommended Die Attach Material Soft Solder or Conductive Epoxy

Recommended Wire Bond - Gate Al 150µm X1

Recommended Wire Bond – Source Al 380µm X2

Die Drawing – Dimensions (µm)

Mechanical Data

Chip backside is COLLECTOR


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Sawn Wafer on Film-Frame – Dimensions (inches)

X = 5.31mm ±0.13mm pocket size Y = 5.31mm ±0.13mm pocket size

Z = 0.41mm ±0.05mm pocket depth A = 5° ±1/2° pocket draft angle

No Cross Slots Array = 11 X 8 (88)

OVERALL TRAY SIZE

Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm

Flatness = 0.30mm

Die in Waffle Pack – Dimensions (mm)

X

Y

A X

Z

DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO

RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS

GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION.

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR

DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY

ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND

CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS

WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use

provided in the labelling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.


fga20n120ftdu igbt die - micross · 2014. 9. 26. · page 1 further information - contact your...

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