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21 Fabrication and oxidation behavior of reactively hot pressed TaB 2 -SiC ceramics k RdO?4SRE bcRg S?bSC]"bR Rev. Adv. Mater. Sci. 28 (2011) 21-25 Corresponding author: Do Kyung Kim, e-mail: [email protected] FABRICATION AND OXIDATION BEHAVIOR OF REACTIVELY HOT PRESSED TaB 2 -SiC CERAMICS Seung Jun Lee 1 , SeungSu Baek 2 , Eul Son Kang 2 , Seok-Min Yong 1 and Do Kyung Kim 1 1 Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 335 Gwahangno, Yuseong-gu, Daejeon 305-701, Republic of Korea 2 Agency for Defence Development (ADD), 462 Jochiwongil, Yuseong-gu, Daejeon 305-600, Republic of Korea Received: February 17, 2011 Abstract. The synthesis route, microstructure, mechanical properties and oxidation behavior of TaB 2 -SiC composite fabricated by reactive hot pressing using Ta/B 4 C/Si as precursors were investigated. The reaction sequence of TaB 2 -SiC composite was studied thorough series of heat treatment ranging from 1000 to 1900 jC in Ar. Based on the reaction sequence analysis, TaB 2 - SiC composite was reactively hot pressed at 1900 jC. Its elastic modulus, flexural strength, Vickers hardness and fracture toughness were 487 GPa, 542 MPa, 17.9 GPa and 3.63 MPam 1/2 , respectively. The oxidation behavior of the TaB 2 -SiC composites at 1500 jC in air exhibited pas- sive oxidation with parabolic kinetic. 1. INTRODUCTION Transition metal boride, carbide and nitride have been classified as ultra-high temperature ceramics (UHTCs). UHTCs possess unique properties such OaVWUV[ SZb W?U A] W?b j VWUV [ S4VO?W4OZ properties and good oxidation resistance [1]. Among UHTCs, tantalum diboride has a high melting point j VWUV VOCR?Saa CO O?RU]]RbVSC mal conductivity [2]. This combination of properties makes TaB 2 -based ceramics potentially useful in applications for thermal protection system (TPS) on hypersonic aerospace vehicles and reusable atmo- spheric re-entry vehicles. Many attempts have been made to enhance the oxidation resistance of transi- tion-metal boride (ZrB 2 , HfB 2 ) through appropriate additives [3-5]. For temperatures above 1200 jC, the addition of SiC provides improved oxidation re- sistance by forming a SiO 2 -rich protective layer [3,5]. To date, oxidation behavior of tantalum diboride has not been studied as extensively as other transition metal diborides such as ZrB 2 and HfB 2 . Transition-metal borides typically need relatively high temperature (>1900 jC) and high pressure (> 30 MPa) to obtain fully densified samples because of strong covalent bonding and low diffusion coeffi- cient [1]. Therefore, metallic additives have been used to promote liquid-phase formation that can reduce densification temperature, but it can dete- riorate the high temperature properties [6]. Recently, pressureless sintering of transition-metal borides has been widely investigated by using WC, B 4 C, C and MoSi 2 [7-9]. Another alternative advantageous method is reactive hot pressing (RHP), which in- volves both the synthesis and densification under single-step process leading to high-density ceram- ics at reduced temperatures and lower impurity con- tents compared with non-reactive process [10-12]. In this paper, the reaction sequence, microstruc- ture, mechanical properties and oxidation behavior

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Page 1: FABRICATION AND OXIDATION BEHAVIOR OF REACTIVELY HOT ...mse2.kaist.ac.kr/~ncrl/pub/2011_FABRICATION AND OXIDATION BE… · Fabrication and oxidation behavior of reactively hot pressed

21Fabrication and oxidation behavior of reactively hot pressed TaB2-SiC ceramics

© 2011 Advanced Study Center C]. Ltd.

Rev. Adv. Mater. Sci. 28 (2011) 21-25

Corresponding author: Do Kyung Kim, e-mail: [email protected]

FABRICATION AND OXIDATION BEHAVIOR OFREACTIVELY HOT PRESSED TaB2-SiC CERAMICS

Seung Jun Lee1, SeungSu Baek2, Eul Son Kang2, Seok-Min Yong1

and Do Kyung Kim1

1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), 335 Gwahangno, Yuseong-gu, Daejeon 305-701, Republic of Korea

2Agency for Defence Development (ADD), 462 Jochiwongil, Yuseong-gu, Daejeon 305-600, Republic of Korea

Received: February 17, 2011

Abstract. The synthesis route, microstructure, mechanical properties and oxidation behavior ofTaB2-SiC composite fabricated by reactive hot pressing using Ta/B4C/Si as precursors wereinvestigated. The reaction sequence of TaB2-SiC composite was studied thorough series of heattreatment ranging from 1000 to 1900 °C in Ar. Based on the reaction sequence analysis, TaB2-SiC composite was reactively hot pressed at 1900 °C. Its elastic modulus, flexural strength,Vickers hardness and fracture toughness were 487 GPa, 542 MPa, 17.9 GPa and 3.63 MPam1/2,respectively. The oxidation behavior of the TaB2-SiC composites at 1500 °C in air exhibited pas-sive oxidation with parabolic kinetic.

1. INTRODUCTION

Transition metal boride, carbide and nitride havebeen classified as ultra-high temperature ceramics(UHTCs). UHTCs possess unique properties suchas high melting p]int (>3200 °C , high mechanicalproperties and good oxidation resistance [1]. AmongUHTCs, tantalum diboride has a high melting point(3200 °C , high hardness (24.5 GPa and g]]d ther-mal conductivity [2]. This combination of propertiesmakes TaB2-based ceramics potentially useful inapplications for thermal protection system (TPS) onhypersonic aerospace vehicles and reusable atmo-spheric re-entry vehicles. Many attempts have beenmade to enhance the oxidation resistance of transi-tion-metal boride (ZrB2, HfB2) through appropriateadditives [3-5]. For temperatures above 1200 °C,the addition of SiC provides improved oxidation re-sistance by forming a SiO2-rich protective layer [3,5].To date, oxidation behavior of tantalum diboride has

not been studied as extensively as other transitionmetal diborides such as ZrB2 and HfB2.

Transition-metal borides typically need relativelyhigh temperature (>1900 °C) and high pressure (>30 MPa) to obtain fully densified samples becauseof strong covalent bonding and low diffusion coeffi-cient [1]. Therefore, metallic additives have beenused to promote liquid-phase formation that canreduce densification temperature, but it can dete-riorate the high temperature properties [6]. Recently,pressureless sintering of transition-metal borideshas been widely investigated by using WC, B4C, Cand MoSi2 [7-9]. Another alternative advantageousmethod is reactive hot pressing (RHP), which in-volves both the synthesis and densification undersingle-step process leading to high-density ceram-ics at reduced temperatures and lower impurity con-tents compared with non-reactive process [10-12].

In this paper, the reaction sequence, microstruc-ture, mechanical properties and oxidation behavior

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22 S.J. Lee, S. Baek, E.S. Kang, S.-M. Yong and D.K. Kim

of reactively hot pressed TaB2-SiC composite areinvestigated.

2. EXPERIMENT

The precurs]r p]wder were Ta (-325 mesh, Sigma–Aldrich, USA), B4C (Grade HS, ~0.8 m, H. C.Stack, Germany and Si (-325 mesh, Sigma–Aldrich,USA).The chemical reaction can be expressed bythe following equation, used to prepare the TaB2-SiC composite:

4 22 Ta+ B C+ Si 2 TaB + SiC. (1)

The volume contents of TaB2 and SiC were 74.4vol.% and 25.6 vol.%, respectively. The theoreticaldensity of the composite with respect to the rule ofmixture is 9.12 g/cm3. The precursor powders wereball-milled in ethanol for 24 h using ZrO2 balls. Inorder to investigate the reaction sequences and sin-tering conditions of the TaB2-SiC, pressureless heattreatment was conducted. The powder mixtures werepressed into disc shaped pellets and heat treatedin the temperature range of 1000 to 1900 °C for 1hunder an Ar atmosphere with a heating rate of 10°C/min. Under the above basic experimental condi-tions the composites were sintered using reactivehot pressing at 1900 °C for 1h under a pressure of32 MPa in an Ar atmosphere.

Phase composition was determined by X-raydiffractometry (XRD, Rigaku D/MAM-IIIC). The mi-crostructures of each specimen were observed us-ing a scanning electron microscope (SEM PhilipsXL 30). The polished samples were subjected to anoxidation test in Air. The specimen was heat treated

Fig. 1. Gibbs free energy as a function of tempera-ture indicating favourable reaction for between 300and 2000K.

Fig. 2. The XRD patterns of the Ta/B4C/Si mixedpowders which are heat-treated at different tempera-tures for 60 min in Ar.

at 1500 °C for 30 min in a tube furnace with a heat-ing rate of 5 °C/min. The oxidation behavior wasalso studied using thermal gravimetric analysis(TGA, SETARAM). Elastic modulus (E) was mea-sured by the resonance frequency method (ASTME1876-1, 2001). Hardness and fracture toughnessof the sample were determined using Vickers in-dentation at a load of 2 kg and a dwell time of 15 s.The fracture toughness was estimated through thefollowing equation [13]:

IC

PK

al1

2

0.0319 ,

where P is the applied load, a is the mean indenta-tion half-diagonal length, and l is the crack length.The flexural strength was measured by three pointbending method.

3. RESULTS AND DISCUSSION

3.1. Thermodynamic calculations

Fig. 1 shows Gibbs free energy of the possible re-action in the Ta/B4C/Si system based on the ther-modynamic calculation. The large negative Gibbsenergy values indicated the thermodynamic possi-bility of the reaction. In light of thermodynamic cal-culation, every possible reaction has negative Gibbsfree energy values, indicating that the reactions arethermodynamically favourable.

4Ta+ B C TaC+ 4B, (2)

2Ta+ 2B TaB , (3)

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23Fabrication and oxidation behavior of reactively hot pressed TaB2-SiC ceramics

Fig. 3. SEM micrographs of TaB2-SiC compositeafter reactively hot pressed at 1900 °C.

Fig. 4. Isothermal TG analysis of TaB2-SiC com-posite at 1500 °C showing parabolic oxidation be-havior. Inset shows cross-sectional SEM images ofTaB2-SiC composite showing layer structure; sur-face SiO2 layer (I), SiC depleted layer (II), and un-reacted TaB2-SiC layer(III) after exposure of samplesat 1500 °C for 30 min.

Material Relative Elastic Flexural Vickers Fracture Ref.density modulus strength hardness toughness(% T.D.) (GPa) (MPa) (GPa) (MPam1/2)

TaB2-SiC 98.6 468 608±64 19.1±0.4 3.35±0.38 This studyHfB2-SiC 99.8 - 692±58 18.3±0.3 5.23±0.17 5ZrB2-SiC ~99 510 800±115 27±2.2 2.12±0.06 12

Table 1. Relative density and mechanical properties of the reactively hot pressed samples.

4 23 Ta+ B C 2 TaB + TaC, (4)

4 22 TaC+ B C+ 3Si 2TaB + 3SiC, (5)

2TaC+ 2B+ Si TaB + 3SiC, (6)

Si+ C SiC. (7)

3.2. The powder synthesis via solid-state precursors

Fig. 2 shows the XRD results of the samples heat-treated at different temperatures. The samples heattreated at 1000 °C revealed the formation of a cubicphase of TaC, in addition to Si and Ta peaks. Theresult indicates that the reaction between Ta andB4C occurs at 1000 °C. At a suitable reaction tem-perature, it is assumed that B and C atoms fromB4C diffuse faster than those of Ta and Si. Amongthese reactions, the diffusion rate of C is higher thanthat of B and C easily reacts with Ta [10,11]. As aresult, it is evident that the formation of TaC occursat a temperature lower than 1000 °C and occursfaster than the formation of TaB2. The formation of

TaB2 occurs at a relatively higher temperature (1400°C) through a reaction between Ta and B or residualB4C. By analyzing the reaction sequence, it can beevidently concluded that reactions (2) and (3) or (4)may occur in two steps. Further increase in the re-action temperature results in the formation of TaB2

as the main phase, based on the peak intensity, ascan be seen in Fig. 2. The XRD pattern of the samplereacted at 1900 °C showed the formation of the finalcomposites TaB2 and SiC without any secondaryphase. As a result, it can be concluded that thepowder reaction takes place in two steps, in whichthe reaction initiated the formation of TaC and athigher temperature, simultaneous reactions takeplace by reaction (5) and (6) and formed TaB2, SiCand elimination of TaC.

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24 S.J. Lee, S. Baek, E.S. Kang, S.-M. Yong and D.K. Kim

3.3. Microstructure

Fig. 3 shows the microstructure of TaB2-SiC com-posite densified at 1900 °C for 1 h. As discussedabove, during the reaction process the diffusion ratesof Ta and Si atoms are slow and the compound for-mation is mainly controlled based on the diffusionrate and reactivity of boron and carbon. Due to thelarge particle size of the Ta precursor powder, theresultant product TaB2 also formed with similar sizegrains, as shown in Fig. 3. Thus, the distributionsof the in situ-formed TaB2 and SiC phases in thecomposites are not homogenous with large TaB2

(light phase) particles and non-uniform distributionof SiC (dark phase). Size and morphology of formedTaB2 and SiC is related to its original particle sizeand shape.

3.4. Oxidation behavior

Fig. 4 shows the results of isothermal TGA analy-sis of TaB2-SiC composite at 1500 °C in air andinset gives a cross-sectional analysis of the oxi-dized TaB2-SiC composite (1500 °C for 30 min, inair) showing a layered structure: SiO2 layer (I), SiC-depleted layer (II) and un-reacted TaB2-SiC layer.The formation of layered structure is consistent withobservations of other investigators who have stud-ied ZrB2-SiC and HfB2-SiC composites[1,3,5]. Asshown in Fig. 4, the TaB2-SiC composite exhibitedpassive oxidation protection with parabolic mass gainkinetics during the isothermal analysis at 1500 °C.At high temperatures (above 1300 °C), theSiC phase begins oxidizing, resulting in the forma-tion of a silica-rich glassy layer on the surface byreaction (8).

s g g2 2

SiC( ) 3 / 2O ( ) SiO ( ) CO( ).l (8)

The surface silica rich layer prohibits the trans-port of oxygen through the inner oxide scales andmakes it possible for a TaB2-SiC composite to showparabolic mass gain kinetics.

3.5. Mechanical properties

The relative density and mechanical properties ofreactively hot pressed TaB2-SiC composite werecompared to those of HfB2 and ZrB2 [5,12]. (Table1). Elastic modulus, flexural strength, Vickers hard-ness of TaB2-SiC composite are slightly lower thanthose of HfB2 and ZrB2 based composite. Direct com-parison seems unjustified in this case because ofthe difference in the volume fraction of boride andsilicon carbide, sample preparation method, test-

ing methods and specimen sizes being tested. Ingeneral, the mechanical properties of TaB2 are com-parable to those of ZrB2 and HfB2 [5,12], whichmakes it a promising candidate material for ultra-high temperature applications such as propulsionsystems.

4. CONCLUSIONS

This study reports on reactive powder synthesis viasolid-state precursors, microstructure, oxidationbehavior and mechanical properties of TaB2-SiCcomposite. The reactions of the powder mixturecommenced at 1000 °C and finished at 1900 °C. Inan ambient oxidation test, TaB2-SiC showed para-bolic oxidation behavior at 1500 °C. The mechani-cal properties for the reactively hot pressed TaB2-SiC composite were comparable to the reportedvalue. To our knowledge, this is the first time to in-vestigate reaction mechanisms and oxidation be-havior of TaB2-SiC fabricated by reactive hot press-ing. Future work will focus on evaluating the oxida-tion behavior of TaB2-SiC in extreme conditions (>2000 °C) by using an oxyacetylene torch.

ACKNOWLEDGEMENTS

This work was supported by the Center for InorganicPhotovoltaic Materials (No. 2008-0062206), KoreaScience and Engineering Foundation (KOSEF) grant(No. R01-2008-000-20480-0) and the Priority Re-search Centers Program through the National Re-search Foundation of Korea (NRF) (2009-0094041)funded by the Korean government (MEST).

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25Fabrication and oxidation behavior of reactively hot pressed TaB2-SiC ceramics

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