electronic devices and_circuit_theory_part_1

SEVENTH EDITION

ELECTRONIC DEVICESAND CIRCUIT THEORY

ROBERT BOYLESTAD

LOUIS NASHELSKY

!

Contents

v

PREFACE xiii

ACKNOWLEDGMENTS xvii

1 SEMICONDUCTOR DIODES 1" # " $ % & ' ( ) * + & , ( % -

" # . $ ) / 0 1 2 , ( ) / -

" # 3 4 / 5 , + ( % ) * + & ( ' 6 0 & / ' , 0 1 7 8

" # 9 : % / ' ; < = / > / 1 7 ?

" # @ : A & ' , % 7 , + 6 0 & / ' , 0 1 7 B C D 0 % ) E D F < G / H

" # I 4 / 5 , + ( % ) * + & ( ' 2 , ( ) / - J

" # K L / 7 , 7 & 0 % + / = / > / 1 7 - H

" # M 2 , ( ) / : N * , > 0 1 / % & O , ' + * , & 7 P Q

" # R 2 , ( ) / 4 G / + , S , + 0 & , ( % 4 T / / & 7 P H

" # " U F ' 0 % 7 , & , ( % 0 % ) 2 , S S * 7 , ( % O 0 G 0 + , & 0 % + / 8 -

" # " " L / > / ' 7 / L / + ( > / ' < F , 5 / 8 P

" # " . 4 / 5 , + ( % ) * + & ( ' 2 , ( ) / V ( & 0 & , ( % 8 P

" # " 3 2 , ( ) / F / 7 & , % ; 8 8

" # " 9 W / % / ' 2 , ( ) / 7 8 X

" # " @ = , ; T & D : 5 , & & , % ; 2 , ( ) / 7 Y = : 2 7 Z 8 [

" # " I 2 , ( ) / \ ' ' 0 < 7 B $ % & / ; ' 0 & / ) O , ' + * , & 7 Q P

" # " K ] 4 G , + / ^ , % ) ( _ 7 Q 8

2 DIODE APPLICATIONS 51. # " $ % & ' ( ) * + & , ( % X -

. # . = ( 0 ) D = , % / \ % 0 1 < 7 , 7 X P

. # 3 2 , ( ) / \ G G ' ( A , 5 0 & , ( % 7 X H

. # 9 4 / ' , / 7 2 , ( ) / O ( % S , ; * ' 0 & , ( % 7 _ , & T 2 O $ % G * & 7 X `

. # @ ] 0 ' 0 1 1 / 1 0 % ) 4 / ' , / 7 D ] 0 ' 0 1 1 / 1 O ( % S , ; * ' 0 & , ( % 7 ? Q

. # I \ V 2 a b L c 0 & / 7 ? H

. # K 4 , % * 7 ( , ) 0 1 $ % G * & 7 d e 0 1 S D ^ 0 > / L / + & , S , + 0 & , ( % ? `

. # M f * 1 1 D ^ 0 > / L / + & , S , + 0 & , ( % H P

. # R O 1 , G G / ' 7 H ?

. # " U O 1 0 5 G / ' 7 [ 8

. # " " W / % / ' 2 , ( ) / 7 [ H

. # " . g ( 1 & 0 ; / D 6 * 1 & , G 1 , / ' O , ' + * , & 7 ` Q

. # " 3 ] 4 G , + / ^ , % ) ( _ 7 ` H

3 BIPOLAR JUNCTION TRANSISTORS 1123 # " $ % & ' ( ) * + & , ( % - - P

3 # . F ' 0 % 7 , 7 & ( ' O ( % 7 & ' * + & , ( % - - 8

3 # 3 F ' 0 % 7 , 7 & ( ' b G / ' 0 & , ( % - - 8

3 # 9 O ( 5 5 ( % D h 0 7 / O ( % S , ; * ' 0 & , ( % - - X

3 # @ F ' 0 % 7 , 7 & ( ' \ 5 G 1 , S < , % ; \ + & , ( % - - `

3 # I O ( 5 5 ( % D : 5 , & & / ' O ( % S , ; * ' 0 & , ( % - P J

3 # K O ( 5 5 ( % D O ( 1 1 / + & ( ' O ( % S , ; * ' 0 & , ( % - P H

3 # M = , 5 , & 7 ( S b G / ' 0 & , ( % - P [

3 # R F ' 0 % 7 , 7 & ( ' 4 G / + , S , + 0 & , ( % 4 T / / & - 8 J

3 # " U F ' 0 % 7 , 7 & ( ' F / 7 & , % ; - 8 Q

3 # " " F ' 0 % 7 , 7 & ( ' O 0 7 , % ; 0 % ) F / ' 5 , % 0 1 $ ) / % & , S , + 0 & , ( % - 8 ?

3 # " . ] 4 G , + / ^ , % ) ( _ 7 - 8 [

4 DC BIASINGBJTS 1439 # " $ % & ' ( ) * + & , ( % - Q 8

9 # . b G / ' 0 & , % ; ] ( , % & - Q Q

9 # 3 f , A / ) D h , 0 7 O , ' + * , & - Q ?

9 # 9 : 5 , & & / ' D 4 & 0 i , 1 , j / ) h , 0 7 O , ' + * , & - X 8

9 # @ g ( 1 & 0 ; / D 2 , > , ) / ' h , 0 7 - X H

9 # I 2 O h , 0 7 _ , & T g ( 1 & 0 ; / f / / ) i 0 + k - ? X

9 # K 6 , 7 + / 1 1 0 % / ( * 7 h , 0 7 O ( % S , ; * ' 0 & , ( % 7 - ? [

9 # M 2 / 7 , ; % b G / ' 0 & , ( % 7 - H Q

9 # R F ' 0 % 7 , 7 & ( ' 4 _ , & + T , % ; V / & _ ( ' k 7 - [ J

9 # " U F ' ( * i 1 / 7 T ( ( & , % ; F / + T % , N * / 7 - [ X

9 # " " l m l F ' 0 % 7 , 7 & ( ' 7 - [ [

9 # " . h , 0 7 4 & 0 i , 1 , j 0 & , ( % - ` J

9 # " 3 ] 4 G , + / ^ , % ) ( _ 7 - ` `

5 FIELD-EFFECT TRANSISTORS 211@ # " $ % & ' ( ) * + & , ( % P - -

@ # . O ( % 7 & ' * + & , ( % 0 % ) O T 0 ' 0 + & / ' , 7 & , + 7 ( S n f : F 7 P - P

@ # 3 F ' 0 % 7 S / ' O T 0 ' 0 + & / ' , 7 & , + 7 P - `

vi Contents

@ # 9 4 G / + , S , + 0 & , ( % 4 T / / & 7 Y n f : F 7 Z P P 8

@ # @ $ % 7 & ' * 5 / % & 0 & , ( % P P ?

@ # I $ 5 G ( ' & 0 % & L / 1 0 & , ( % 7 T , G 7 P P H

@ # K 2 / G 1 / & , ( % D F < G / 6 b 4 f : F P P [

@ # M : % T 0 % + / 5 / % & D F < G / 6 b 4 f : F P 8 Q

@ # R 6 b 4 f : F e 0 % ) 1 , % ; P Q P

@ # " U g 6 b 4 P Q 8

@ # " " O 6 b 4 P Q Q

@ # " . 4 * 5 5 0 ' < F 0 i 1 / P Q ?

@ # " 3 ] 4 G , + / ^ , % ) ( _ 7 P Q H

6 FET BIASING 253I # " $ % & ' ( ) * + & , ( % P X 8

I # . f , A / ) D h , 0 7 O ( % S , ; * ' 0 & , ( % P X Q

I # 3 4 / 1 S D h , 0 7 O ( % S , ; * ' 0 & , ( % P X [

I # 9 g ( 1 & 0 ; / D 2 , > , ) / ' h , 0 7 , % ; P ? Q

I # @ 2 / G 1 / & , ( % D F < G / 6 b 4 f : F 7 P H J

I # I : % T 0 % + / 5 / % & D F < G / 6 b 4 f : F 7 P H Q

I # K 4 * 5 5 0 ' < F 0 i 1 / P [ J

I # M O ( 5 i , % 0 & , ( % V / & _ ( ' k 7 P [ P

I # R 2 / 7 , ; % P [ X

I # " U F ' ( * i 1 / 7 T ( ( & , % ; P [ H

I # " " l D O T 0 % % / 1 f : F 7 P [ [

I # " . o % , > / ' 7 0 1 n f : F h , 0 7 O * ' > / P ` -

I # " 3 ] 4 G , + / ^ , % ) ( _ 7 P ` Q

7 BJT TRANSISTOR MODELING 305K # " $ % & ' ( ) * + & , ( % 8 J X

K # . \ 5 G 1 , S , + 0 & , ( % , % & T / \ O 2 ( 5 0 , % 8 J X

K # 3 h n F F ' 0 % 7 , 7 & ( ' 6 ( ) / 1 , % ; 8 J ?

K # 9 F T / $ 5 G ( ' & 0 % & ] 0 ' 0 5 / & / ' 7 p q r s q t s u v s u r 8 J [

K # @ F T / w x F ' 0 % 7 , 7 & ( ' 6 ( ) / 1 8 - Q

K # I F T / e < i ' , ) : N * , > 0 1 / % & 6 ( ) / 1 8 P -

K # K c ' 0 G T , + 0 1 2 / & / ' 5 , % 0 & , ( % ( S & T / y D G 0 ' 0 5 / & / ' 7 8 P H

K # M g 0 ' , 0 & , ( % 7 ( S F ' 0 % 7 , 7 & ( ' ] 0 ' 0 5 / & / ' 7 8 8 -

8 BJT SMALL-SIGNAL ANALYSIS 338M # " $ % & ' ( ) * + & , ( % 8 8 [

M # 3 O ( 5 5 ( % D : 5 , & & / ' f , A / ) D h , 0 7 O ( % S , ; * ' 0 & , ( % 8 8 [

M # 3 g ( 1 & 0 ; / D 2 , > , ) / ' h , 0 7 8 Q P

M # 9 O : : 5 , & & / ' D h , 0 7 O ( % S , ; * ' 0 & , ( % 8 Q X

M # 3 : 5 , & & / ' D f ( 1 1 ( _ / ' O ( % S , ; * ' 0 & , ( % 8 X P

M # I O ( 5 5 ( % D h 0 7 / O ( % S , ; * ' 0 & , ( % 8 X [

viiContents

M # K O ( 1 1 / + & ( ' f / / ) i 0 + k O ( % S , ; * ' 0 & , ( % 8 ? J

M # M O ( 1 1 / + & ( ' 2 O f / / ) i 0 + k O ( % S , ; * ' 0 & , ( % 8 ? ?

M # R \ G G ' ( A , 5 0 & / e < i ' , ) : N * , > 0 1 / % & O , ' + * , & 8 ? `

M # " U O ( 5 G 1 / & / e < i ' , ) : N * , > 0 1 / % & 6 ( ) / 1 8 H X

M # " " 4 * 5 5 0 ' < F 0 i 1 / 8 [ P

M # " . F ' ( * i 1 / 7 T ( ( & , % ; 8 [ P

M # " 3 ] 4 G , + / ^ , % ) ( _ 7 8 [ X

9 FET SMALL-SIGNAL ANALYSIS 401R # " $ % & ' ( ) * + & , ( % Q J -

R # . f : F 4 5 0 1 1 D 4 , ; % 0 1 6 ( ) / 1 Q J P

R # 3 n f : F f , A / ) D h , 0 7 O ( % S , ; * ' 0 & , ( % Q - J

R # 9 n f : F 4 / 1 S D h , 0 7 O ( % S , ; * ' 0 & , ( % Q - P

R # @ n f : F g ( 1 & 0 ; / D 2 , > , ) / ' O ( % S , ; * ' 0 & , ( % Q - [

R # I n f : F 4 ( * ' + / D f ( 1 1 ( _ / ' Y O ( 5 5 ( % D 2 ' 0 , % Z O ( % S , ; * ' 0 & , ( % Q - `

R # K n f : F O ( 5 5 ( % D c 0 & / O ( % S , ; * ' 0 & , ( % Q P P

R # M 2 / G 1 / & , ( % D F < G / 6 b 4 f : F 7 Q P ?

R # R : % T 0 % + / 5 / % & D F < G / 6 b 4 f : F 7 Q P [

R # " U : D 6 b 4 f : F 2 ' 0 , % D f / / ) i 0 + k O ( % S , ; * ' 0 & , ( % Q P `

R # " " : D 6 b 4 f : F g ( 1 & 0 ; / D 2 , > , ) / ' O ( % S , ; * ' 0 & , ( % Q 8 P

R # " . 2 / 7 , ; % , % ; f : F \ 5 G 1 , S , / ' V / & _ ( ' k 7 Q 8 8

R # " 3 4 * 5 5 0 ' < F 0 i 1 / Q 8 ?

R # " 9 F ' ( * i 1 / 7 T ( ( & , % ; Q 8 `

R # " @ ] 4 G , + / ^ , % ) ( _ 7 Q 8 `

10 SYSTEMS APPROACHEFFECTS OF Rs AND RL 452" U # " $ % & ' ( ) * + & , ( % Q X P

" U # . F _ ( D ] ( ' & 4 < 7 & / 5 7 Q X P

" U # 3 : S S / + & ( S 0 = ( 0 ) $ 5 G / ) 0 % + / Y z { Z Q X Q

" U # 9 : S S / + & ( S 0 4 ( * ' + / $ 5 G / ) 0 % + / Y z | Z Q X `

" U # @ O ( 5 i , % / ) : S S / + & ( S z | 0 % ) z { Q ? -

" U # I h n F O : V / & _ ( ' k 7 Q ? 8

" U # K h n F : 5 , & & / ' D f ( 1 1 ( _ / ' V / & _ ( ' k 7 Q ? [

" U # M h n F O h V / & _ ( ' k 7 Q H -

" U # R f : F V / & _ ( ' k 7 Q H 8

" U # " U 4 * 5 5 0 ' < F 0 i 1 / Q H ?

" U # " " O 0 7 + 0 ) / ) 4 < 7 & / 5 7 Q [ J

" U # " . ] 4 G , + / ^ , % ) ( _ 7 Q [ -

11 BJT AND JFET FREQUENCY RESPONSE 493" " # " $ % & ' ( ) * + & , ( % Q ` 8

" " # . = ( ; 0 ' , & T 5 7 Q ` 8

" " # 3 2 / + , i / 1 7 Q ` H

viii Contents

" " # 9 c / % / ' 0 1 f ' / N * / % + < O ( % 7 , ) / ' 0 & , ( % 7 X J J

" " # @ = ( _ D f ' / N * / % + < \ % 0 1 < 7 , 7 B h ( ) / ] 1 ( & X J 8

" " # I = ( _ D f ' / N * / % + < L / 7 G ( % 7 / B h n F \ 5 G 1 , S , / ' X J [

" " # K = ( _ D f ' / N * / % + < L / 7 G ( % 7 / B f : F \ 5 G 1 , S , / ' X - ?

" " # M 6 , 1 1 / ' : S S / + & O 0 G 0 + , & 0 % + / X P J

" " # R e , ; T D f ' / N * / % + < L / 7 G ( % 7 / B h n F \ 5 G 1 , S , / ' X P 8

" " # " U e , ; T D f ' / N * / % + < L / 7 G ( % 7 / B f : F \ 5 G 1 , S , / ' X 8 J

" " # " " 6 * 1 & , 7 & 0 ; / f ' / N * / % + < : S S / + & 7 X 8 Q

" " # " . 4 N * 0 ' / D ^ 0 > / F / 7 & , % ; X 8 ?

" " # " 3 ] 4 G , + / ^ , % ) ( _ 7 X 8 [

12 COMPOUND CONFIGURATIONS 544" . # " $ % & ' ( ) * + & , ( % X Q Q

" . # . O 0 7 + 0 ) / O ( % % / + & , ( % X Q Q

" . # 3 O 0 7 + ( ) / O ( % % / + & , ( % X Q `

" . # 9 2 0 ' 1 , % ; & ( % O ( % % / + & , ( % X X J

" . # @ f / / ) i 0 + k ] 0 , ' X X X

" . # I O 6 b 4 O , ' + * , & X X `

" . # K O * ' ' / % & 4 ( * ' + / O , ' + * , & 7 X ? -

" . # M O * ' ' / % & 6 , ' ' ( ' O , ' + * , & 7 X ? 8

" . # R 2 , S S / ' / % & , 0 1 \ 5 G 1 , S , / ' O , ' + * , & X ? ?

" . # " U h $ f : F s h $ 6 b 4 s 0 % ) O 6 b 4 2 , S S / ' / % & , 0 1 \ 5 G 1 , S , / ' O , ' + * , & 7 X H Q

" . # " " ] 4 G , + / ^ , % ) ( _ 7 X H X

13 DISCRETE AND IC MANUFACTURING TECHNIQUES 588" 3 # " $ % & ' ( ) * + & , ( % X [ [

" 3 # . 4 / 5 , + ( % ) * + & ( ' 6 0 & / ' , 0 1 7 s 4 , s c / s 0 % ) c 0 \ 7 X [ [

" 3 # 3 2 , 7 + ' / & / 2 , ( ) / 7 X ` J

" 3 # 9 F ' 0 % 7 , 7 & ( ' f 0 i ' , + 0 & , ( % X ` P

" 3 # @ $ % & / ; ' 0 & / ) O , ' + * , & 7 X ` 8

" 3 # I 6 ( % ( 1 , & T , + $ % & / ; ' 0 & / ) O , ' + * , & X ` X

" 3 # K F T / ] ' ( ) * + & , ( % O < + 1 / X ` H

" 3 # M F T , % D f , 1 5 0 % ) F T , + k D f , 1 5 $ % & / ; ' 0 & / ) O , ' + * , & 7 ? J H

" 3 # R e < i ' , ) $ % & / ; ' 0 & / ) O , ' + * , & 7 ? J [

14 OPERATIONAL AMPLIFIERS 609" 9 # " $ % & ' ( ) * + & , ( % ? J `

" 9 # . 2 , S S / ' / % & , 0 1 0 % ) O ( 5 5 ( % D 6 ( ) / b G / ' 0 & , ( % ? - -

" 9 # 3 b G D \ 5 G h 0 7 , + 7 ? - X

" 9 # 9 ] ' 0 + & , + 0 1 b G D \ 5 G O , ' + * , & 7 ? - `

" 9 # @ b G D \ 5 G 4 G / + , S , + 0 & , ( % 7 B 2 O b S S 7 / & ] 0 ' 0 5 / & / ' 7 ? P X

" 9 # I b G D \ 5 G 4 G / + , S , + 0 & , ( % 7 B f ' / N * / % + < ] 0 ' 0 5 / & / ' 7 ? P [

" 9 # K b G D \ 5 G o % , & 4 G / + , S , + 0 & , ( % 7 ? 8 P

" 9 # M ] 4 G , + / ^ , % ) ( _ 7 ? 8 [

ixContents

15 OP-AMP APPLICATIONS 648" @ # " O ( % 7 & 0 % & D c 0 , % 6 * 1 & , G 1 , / ' ? Q [

" @ # . g ( 1 & 0 ; / 4 * 5 5 , % ; ? X P

" @ # 3 g ( 1 & 0 ; / h * S S / ' ? X X

" @ # 9 O ( % & ' ( 1 1 / ' 4 ( * ' + / 7 ? X ?

" @ # @ $ % 7 & ' * 5 / % & 0 & , ( % O , ' + * , & 7 ? X [

" @ # I \ + & , > / f , 1 & / ' 7 ? ? P

" @ # K ] 4 G , + / ^ , % ) ( _ 7 ? ? ?

16 POWER AMPLIFIERS 679" I # " $ % & ' ( ) * + & , ( % B 2 / S , % , & , ( % 7 0 % ) \ 5 G 1 , S , / ' F < G / 7 ? H `

" I # . 4 / ' , / 7 D f / ) O 1 0 7 7 \ \ 5 G 1 , S , / ' ? [ -

" I # 3 F ' 0 % 7 S ( ' 5 / ' D O ( * G 1 / ) O 1 0 7 7 \ \ 5 G 1 , S , / ' ? [ ?

" I # 9 O 1 0 7 7 h \ 5 G 1 , S , / ' b G / ' 0 & , ( % ? ` 8

" I # @ O 1 0 7 7 h \ 5 G 1 , S , / ' O , ' + * , & 7 ? ` H

" I # I \ 5 G 1 , S , / ' 2 , 7 & ( ' & , ( % H J Q

" I # K ] ( _ / ' F ' 0 % 7 , 7 & ( ' e / 0 & 4 , % k , % ; H J [

" I # M O 1 0 7 7 O 0 % ) O 1 0 7 7 2 \ 5 G 1 , S , / ' 7 H - P

" I # R ] 4 G , + / ^ , % ) ( _ 7 H - Q

17 LINEAR-DIGITAL ICs 721" K # " $ % & ' ( ) * + & , ( % H P -

" K # . O ( 5 G 0 ' 0 & ( ' o % , & b G / ' 0 & , ( % H P -

" K # 3 2 , ; , & 0 1 D \ % 0 1 ( ; O ( % > / ' & / ' 7 H P [

" K # 9 F , 5 / ' $ O o % , & b G / ' 0 & , ( % H 8 P

" K # @ g ( 1 & 0 ; / D O ( % & ' ( 1 1 / ) b 7 + , 1 1 0 & ( ' H 8 X

" K # I ] T 0 7 / D = ( + k / ) = ( ( G H 8 [

" K # K $ % & / ' S 0 + , % ; O , ' + * , & ' < H Q P

" K # M ] 4 G , + / ^ , % ) ( _ 7 H Q X

18 FEEDBACK AND OSCILLATOR CIRCUITS 751" M # " f / / ) i 0 + k O ( % + / G & 7 H X -

" M # . f / / ) i 0 + k O ( % % / + & , ( % F < G / 7 H X P

" M # 3 ] ' 0 + & , + 0 1 f / / ) i 0 + k O , ' + * , & 7 H X [

" M # 9 f / / ) i 0 + k \ 5 G 1 , S , / ' B ] T 0 7 / 0 % ) f ' / N * / % + < O ( % 7 , ) / ' 0 & , ( % 7 H ? X

" M # @ b 7 + , 1 1 0 & ( ' b G / ' 0 & , ( % H ? H

" M # I ] T 0 7 / D 4 T , S & b 7 + , 1 1 0 & ( ' H ? `

" M # K ^ , / % h ' , ) ; / b 7 + , 1 1 0 & ( ' H H P

" M # M F * % / ) b 7 + , 1 1 0 & ( ' O , ' + * , & H H 8

" M # R O ' < 7 & 0 1 b 7 + , 1 1 0 & ( ' H H ?

" M # " U o % , } * % + & , ( % b 7 + , 1 1 0 & ( ' H [ J

x Contents

19 POWER SUPPLIES(VOLTAGE REGULATORS) 783" R # " $ % & ' ( ) * + & , ( % H [ 8

" R # . c / % / ' 0 1 f , 1 & / ' O ( % 7 , ) / ' 0 & , ( % 7 H [ 8

" R # 3 O 0 G 0 + , & ( ' f , 1 & / ' H [ ?

" R # 9 z ~ f , 1 & / ' H [ `

" R # @ 2 , 7 + ' / & / F ' 0 % 7 , 7 & ( ' g ( 1 & 0 ; / L / ; * 1 0 & , ( % H ` P

" R # I $ O g ( 1 & 0 ; / L / ; * 1 0 & ( ' 7 H ` `

" R # K ] 4 G , + / ^ , % ) ( _ 7 [ J Q

20 OTHER TWO-TERMINAL DEVICES 810. U # " $ % & ' ( ) * + & , ( % [ - J

. U # . 4 + T ( & & k < h 0 ' ' , / ' Y e ( & D O 0 ' ' , / ' Z 2 , ( ) / 7 [ - J

. U # 3 g 0 ' 0 + & ( ' Y g 0 ' , + 0 G Z 2 , ( ) / 7 [ - Q

. U # 9 ] ( _ / ' 2 , ( ) / 7 [ - [

. U # @ F * % % / 1 2 , ( ) / 7 [ - `

. U # I ] T ( & ( ) , ( ) / 7 [ P Q

. U # K ] T ( & ( + ( % ) * + & , > / O / 1 1 7 [ P H

. U # M $ L : 5 , & & / ' 7 [ P `

. U # R = , N * , ) D O ' < 7 & 0 1 2 , 7 G 1 0 < 7 [ 8 -

. U # " U 4 ( 1 0 ' O / 1 1 7 [ 8 8

. U # " " F T / ' 5 , 7 & ( ' 7 [ 8 H

21 pnpn AND OTHER DEVICES 842. " # " $ % & ' ( ) * + & , ( % [ Q P

. " # . 4 , 1 , + ( % D O ( % & ' ( 1 1 / ) L / + & , S , / ' [ Q P

. " # 3 h 0 7 , + 4 , 1 , + ( % D O ( % & ' ( 1 1 / ) L / + & , S , / ' b G / ' 0 & , ( % [ Q P

. " # 9 4 O L O T 0 ' 0 + & / ' , 7 & , + 7 0 % ) L 0 & , % ; 7 [ Q X

. " # @ 4 O L O ( % 7 & ' * + & , ( % 0 % ) F / ' 5 , % 0 1 $ ) / % & , S , + 0 & , ( % [ Q H

. " # I 4 O L \ G G 1 , + 0 & , ( % 7 [ Q [

. " # K 4 , 1 , + ( % D O ( % & ' ( 1 1 / ) 4 _ , & + T [ X P

. " # M c 0 & / F * ' % D b S S 4 _ , & + T [ X Q

. " # R = , ; T & D \ + & , > 0 & / ) 4 O L [ X X

. " # " U 4 T ( + k 1 / < 2 , ( ) / [ X [

. " # " " 2 $ \ O [ X [

. " # " . F L $ \ O [ ? J

. " # " 3 o % , } * % + & , ( % F ' 0 % 7 , 7 & ( ' [ ? -

. " # " 9 ] T ( & ( & ' 0 % 7 , 7 & ( ' 7 [ H -

. " # " @ b G & ( D $ 7 ( 1 0 & ( ' 7 [ H 8

. " # " I ] ' ( ; ' 0 5 5 0 i 1 / o % , } * % + & , ( % F ' 0 % 7 , 7 & ( ' [ H X

xiContents

22 OSCILLOSCOPE AND OTHERMEASURING INSTRUMENTS 884. . # " $ % & ' ( ) * + & , ( % [ [ Q

. . # . O 0 & T ( ) / L 0 < F * i / B F T / ( ' < 0 % ) O ( % 7 & ' * + & , ( % [ [ Q

. . # 3 O 0 & T ( ) / L 0 < b 7 + , 1 1 ( 7 + ( G / b G / ' 0 & , ( % [ [ X

. . # 9 g ( 1 & 0 ; / 4 _ / / G b G / ' 0 & , ( % [ [ ?

. . # @ 4 < % + T ' ( % , j 0 & , ( % 0 % ) F ' , ; ; / ' , % ; [ [ `

. . # I 6 * 1 & , & ' 0 + / b G / ' 0 & , ( % [ ` 8

. . # K 6 / 0 7 * ' / 5 / % & o 7 , % ; O 0 1 , i ' 0 & / ) O L b 4 + 0 1 / 7 [ ` 8

. . # M 4 G / + , 0 1 O L b f / 0 & * ' / 7 [ ` [

. . # R 4 , ; % 0 1 c / % / ' 0 & ( ' 7 [ ` `

APPENDIX A: HYBRID PARAMETERSCONVERSION EQUATIONS (EXACT AND APPROXIMATE) 902

APPENDIX B: RIPPLE FACTOR AND VOLTAGE CALCULATIONS 904

APPENDIX C: CHARTS AND TABLES 911

APPENDIX D: SOLUTIONS TO SELECTED ODD-NUMBERED PROBLEMS 913

INDEX 919

xii Contents

Acknowledgments

b * ' 7 , % + / ' / 7 & 0 G G ' / + , 0 & , ( % 5 * 7 & i / / A & / % ) / ) & ( & T / , % 7 & ' * + & ( ' 7 _ T ( T 0 > / * 7 / ) & T / & / A &

0 % ) 7 / % & , % + ( 5 5 / % & 7 s + ( ' ' / + & , ( % 7 s 0 % ) 7 * ; ; / 7 & , ( % 7 ^ / 0 1 7 ( _ 0 % & & ( & T 0 % k L / A 2 0 > , ) D

7 ( % s ] ' ( ) * + & , ( % : ) , & ( ' 0 & ] ' / % & , + / e 0 1 1 s S ( ' k / / G , % ; & ( ; / & T / ' & T / 5 0 % < ) / & 0 , 1 / ) 0 7 D

G / + & 7 ( S G ' ( ) * + & , ( % b * ' 7 , % + / ' / 7 & & T 0 % k 7 & ( 2 0 > / c 0 ' j 0 s 4 / % , ( ' : ) , & ( ' s 0 % ) = , % ) 0

= * ) / _ , ; s : ) , & ( ' s 0 & ] ' / % & , + / e 0 1 1 S ( ' & T / , ' / ) , & ( ' , 0 1 7 * G G ( ' & ( S & T / 4 / > / % & T : ) , & , ( % ( S

& T , 7 & / A &

^ / _ , 7 T & ( & T 0 % k & T ( 7 / , % ) , > , ) * 0 1 7 _ T ( T 0 > / 7 T 0 ' / ) & T / , ' 7 * ; ; / 7 & , ( % 7 0 % ) / > 0 1 * 0 D

& , ( % 7 ( S & T , 7 & / A & & T ' ( * ; T ( * & , & 7 5 0 % < / ) , & , ( % 7 F T / + ( 5 5 / % & 7 S ' ( 5 & T / 7 / , % ) , > , ) * D

0 1 7 T 0 > / / % 0 i 1 / ) * 7 & ( G ' / 7 / % & w C C ~ w y w , % & T , 7 4 / > / % & T

: ) , & , ( % p

Ernest Lee Abbott Napa College, Napa, CAPhillip D. Anderson Muskegon Community College, Muskegon, MI

Al Anthony EG&G VACTEC Inc.A. Duane Bailey Southern Alberta Institute of Technology, Calgary, Alberta, CANADA

Joe Baker University of Southern California, Los Angeles, CAJerrold Barrosse Penn StateOgontzAmbrose Barry University of North CarolinaCharlotte

Arthur Birch Hartford State Technical College, Hartford, CTScott Bisland SEMATECH, Austin, TX

Edward Bloch The Perkin-Elmer CorporationGary C. Bocksch Charles S. Mott Community College, Flint, MI

Jeffrey Bowe Bunker Hill Community College, Charlestown, MAAlfred D. Buerosse Waukesha County Technical College, Pewaukee, WI

Lila Caggiano MicroSim CorporationMauro J. Caputi Hofstra UniversityRobert Casiano International Rectifier Corporation

Alan H. Czarapata Montgomery College, Rockville, MDMohammad Dabbas ITT Technical Institute

John Darlington Humber College, Ontario, CANADALucius B. Day Metropolitan State College, Denver, COMike Durren Indiana Vocational Technical College, South Bend, IN

Dr. Stephen Evanson Bradford University, UKGeorge Fredericks Northeast State Technical Community College, Blountville, TN

F. D. Fuller Humber College, Ontario, CANADA

xvii

Phil Golden DeVry Institute of Technology, Irving, TXJoseph Grabinski Hartford State Technical College, Hartfold, CTThomas K. Grady Western Washington University, Bellingham, WA

William Hill ITT Technical InstituteAlbert L. Ickstadt San Diego Mesa College, San Diego, CA

Jeng-Nan Juang Mercer University, Macon, GAKaren Karger Tektronix Inc.

Kenneth E. Kent DeKalb Technical Institute, Clarkston, GADonald E. King ITT Technical Institute, Youngstown, OHCharles Lewis APPLIED MATERIALS, INC.

Donna Liverman Texas Instruments Inc.William Mack Harrisburg Area Community CollegeRobert Martin Northern Virginia Community College

George T. Mason Indiana Vocational Technical College, South Bend, INWilliam Maxwell Nashville State Technical Institute

Abraham Michelen Hudson Valley Community CollegeJohn MacDougall University of Western Ontario, London, Ontario,

CANADADonald E. McMillan Southwest State University, Marshall, MNThomas E. Newman L. H. Bates Vocational-Technical Institute, Tacoma, WA

Byron Paul Bismarck State CollegeDr. Robert Payne University of Glamorgan, Wales, UK

Dr. Robert A. Powell Oakland Community CollegeE. F. Rockafellow Southern-Alberta Institute of Technology, Calgary,

Alberta, CANADASaeed A. Shaikh Miami-Dade Community College, Miami, FL

Dr. Noel Shammas School of Engineering, Beaconside, UKKen Simpson Stark State College of Technology

Eric Sung Computronics Technology Inc.Donald P. Szymanski Owens Technical College, Toledo, OH

Parker M. Tabor Greenville Technical College, Greenville, SCPeter Tampas Michigan Technological University, Houghton, MI

Chuck Tinney University of UtahKatherine L. Usik Mohawk College of Applied Art & Technology,

Hamilton, Ontario, CANADADomingo Uy Hampton University, Hampton, VA

Richard J. Walters DeVry Technical Institute, Woodbridge, NJLarry J. Wheeler PSE&G Nuclear

Julian Wilson Southern College of Technology, Marietta, GASyd R. Wilson Motorola Inc.

Jean Younes ITT Technical Institute, Troy, MICharles E. Yunghans Western Washington University, Bellingham, WA

Ulrich E. Zeisler Salt Lake Community College, Salt Lake City, UT

xviii Acknowledgments

C H A P T E R

1Semiconductor Diodes1.1 INTRODUCTION

$ & , 7 % ( _ 7 ( 5 / X J < / 0 ' 7 7 , % + / & T / S , ' 7 & & ' 0 % 7 , 7 & ( ' _ 0 7 , % & ' ( ) * + / ) ( % 2 / + / 5 i / ' P 8 s

- ` Q H f ( ' & T ( 7 / ( S * 7 _ T ( / A G / ' , / % + / ) & T / + T 0 % ; / S ' ( 5 ; 1 0 7 7 / % > / 1 ( G / & * i / 7 & ( & T /

7 ( 1 , ) D 7 & 0 & / / ' 0 s , & 7 & , 1 1 7 / / 5 7 1 , k / 0 S / _ 7 T ( ' & < / 0 ' 7 0 ; ( F T / S , ' 7 & / ) , & , ( % ( S & T , 7 & / A &

+ ( % & 0 , % / ) T / 0 > < + ( > / ' 0 ; / ( S & * i / 7 s _ , & T 7 * + + / / ) , % ; / ) , & , ( % 7 , % > ( 1 > , % ; & T / , 5 G ( ' & 0 % &

) / + , 7 , ( % ( S T ( _ 5 * + T + ( > / ' 0 ; / 7 T ( * 1 ) i / ) / ) , + 0 & / ) & ( & * i / 7 0 % ) T ( _ 5 * + T & ( 7 / 5 , D

+ ( % ) * + & ( ' ) / > , + / 7 $ & % ( 1 ( % ; / ' 7 / / 5 7 > 0 1 , ) & ( 5 / % & , ( % & * i / 7 0 & 0 1 1 ( ' & ( + ( 5 G 0 ' / & T /

0 ) > 0 % & 0 ; / 7 ( S ( % / ( > / ' & T / ( & T / ' B _ / 0 ' / S , ' 5 1 < , % & T / 7 ( 1 , ) D 7 & 0 & / / ' 0

F T / 5 , % , 0 & * ' , j 0 & , ( % & T 0 & T 0 7 ' / 7 * 1 & / ) 1 / 0 > / 7 * 7 & ( _ ( % ) / ' 0 i ( * & , & 7 1 , 5 , & 7 O ( 5 D

G 1 / & / 7 < 7 & / 5 7 % ( _ 0 G G / 0 ' ( % _ 0 S / ' 7 & T ( * 7 0 % ) 7 ( S & , 5 / 7 7 5 0 1 1 / ' & T 0 % & T / 7 , % ; 1 / / 1 / D

5 / % & ( S / 0 ' 1 , / ' % / & _ ( ' k 7 V / _ ) / 7 , ; % 7 0 % ) 7 < 7 & / 5 7 7 * ' S 0 + / _ / / k 1 < F T / / % ; , % / / ' i / D

+ ( 5 / 7 5 ( ' / 0 % ) 5 ( ' / 1 , 5 , & / ) , % T , 7 ( ' T / ' k % ( _ 1 / ) ; / ( S & T / i ' ( 0 ) ' 0 % ; / ( S 0 ) > 0 % + / 7 B

, & , 7 ) , S S , + * 1 & / % ( * ; T 7 , 5 G 1 < & ( 7 & 0 < 0 i ' / 0 7 & ( S & T / + T 0 % ; / 7 , % ( % / 0 ' / 0 ( S ' / 7 / 0 ' + T ( '

) / > / 1 ( G 5 / % & ^ / T 0 > / 0 1 7 ( ' / 0 + T / ) 0 G ( , % & 0 & _ T , + T & T / G ' , 5 0 ' < G * ' G ( 7 / ( S & T / + ( % D

& 0 , % / ' , 7 7 , 5 G 1 < & ( G ' ( > , ) / 7 ( 5 / 5 / 0 % 7 ( S T 0 % ) 1 , % ; & T / ) / > , + / ( ' 7 < 7 & / 5 0 % ) & ( G ' ( D

> , ) / 0 5 / + T 0 % , 7 5 S ( ' 0 & & 0 + T 5 / % & & ( & T / ' / 5 0 , % ) / ' ( S & T / % / & _ ( ' k 6 , % , 0 & * ' , j 0 & , ( %

0 G G / 0 ' 7 & ( i / 1 , 5 , & / ) i < & T ' / / S 0 + & ( ' 7 Y / 0 + T ( S _ T , + T _ , 1 1 i / 0 ) ) ' / 7 7 / ) , % & T , 7 & / A & Z p

& T / N * 0 1 , & < ( S & T / 7 / 5 , + ( % ) * + & ( ' 5 0 & / ' , 0 1 , & 7 / 1 S s & T / % / & _ ( ' k ) / 7 , ; % & / + T % , N * / s 0 % )

& T / 1 , 5 , & 7 ( S & T / 5 0 % * S 0 + & * ' , % ; 0 % ) G ' ( + / 7 7 , % ; / N * , G 5 / % &

1.2 IDEAL DIODE

F T / S , ' 7 & / 1 / + & ' ( % , + ) / > , + / & ( i / , % & ' ( ) * + / ) , 7 + 0 1 1 / ) & T / $ & , 7 & T / 7 , 5 G 1 / 7 & ( S

7 / 5 , + ( % ) * + & ( ' ) / > , + / 7 i * & G 1 0 < 7 0 > / ' < > , & 0 1 ' ( 1 / , % / 1 / + & ' ( % , + 7 < 7 & / 5 7 s T 0 > , % ; + T 0 ' D

0 + & / ' , 7 & , + 7 & T 0 & + 1 ( 7 / 1 < 5 0 & + T & T ( 7 / ( S 0 7 , 5 G 1 / 7 _ , & + T $ & _ , 1 1 0 G G / 0 ' , % 0 ' 0 % ; / ( S 0 G D

G 1 , + 0 & , ( % 7 s / A & / % ) , % ; S ' ( 5 & T / 7 , 5 G 1 / & ( & T / > / ' < + ( 5 G 1 / A $ % 0 ) ) , & , ( % & ( & T / ) / & 0 , 1 7

( S , & 7 + ( % 7 & ' * + & , ( % 0 % ) + T 0 ' 0 + & / ' , 7 & , + 7 s & T / > / ' < , 5 G ( ' & 0 % & ) 0 & 0 0 % ) ; ' 0 G T 7 & ( i / S ( * % )

( % 7 G / + , S , + 0 & , ( % 7 T / / & 7 _ , 1 1 0 1 7 ( i / + ( > / ' / ) & ( / % 7 * ' / 0 % * % ) / ' 7 & 0 % ) , % ; ( S & T / & / ' 5 , D

% ( 1 ( ; < / 5 G 1 ( < / ) 0 % ) & ( ) / 5 ( % 7 & ' 0 & / & T / _ / 0 1 & T ( S , % S ( ' 5 0 & , ( % & < G , + 0 1 1 < 0 > 0 , 1 0 i 1 /

S ' ( 5 5 0 % * S 0 + & * ' / ' 7

F T / & / ' 5 _ , 1 1 i / * 7 / ) S ' / N * / % & 1 < , % & T , 7 & / A & 0 7 % / _ ) / > , + / 7 0 ' / , % & ' ( ) * + / )

$ & ' / S / ' 7 & ( 0 % < ) / > , + / ( ' 7 < 7 & / 5 & T 0 & T 0 7 , ) / 0 1 + T 0 ' 0 + & / ' , 7 & , + 7 B G / ' S / + & , % / > / ' < _ 0 <

$ & G ' ( > , ) / 7 0 i 0 7 , 7 S ( ' + ( 5 G 0 ' , 7 ( % s 0 % ) , & ' / > / 0 1 7 _ T / ' / , 5 G ' ( > / 5 / % & 7 + 0 % 7 & , 1 1 i /

5 0 ) / F T / , 7 0 w C ) / > , + / T 0 > , % ; & T / 7 < 5 i ( 1 0 % ) + T 0 ' 0 + & / ' , 7 D

& , + 7 7 T ( _ % , % f , ; 7 - - 0 0 % ) i s ' / 7 G / + & , > / 1 <

1

Figure 1.1 Ideal diode: (a) symbol; (b) characteristics.

2 Chapter 1 Semiconductor Diodes

$ ) / 0 1 1 < s 0 ) , ( ) / _ , 1 1 + ( % ) * + & + * ' ' / % & , % & T / ) , ' / + & , ( % ) / S , % / ) i < & T / 0 ' ' ( _ , % & T /

7 < 5 i ( 1 0 % ) 0 + & 1 , k / 0 % ( G / % + , ' + * , & & ( 0 % < 0 & & / 5 G & & ( / 7 & 0 i 1 , 7 T + * ' ' / % & , % & T / ( G G ( D

7 , & / ) , ' / + & , ( % $ % / 7 7 / % + / p

The characteristics of an ideal diode are those of a switch that can conductcurrent in only one direction.

$ % & T / ) / 7 + ' , G & , ( % ( S & T / / 1 / 5 / % & 7 & ( S ( 1 1 ( _ s , & , 7 + ' , & , + 0 1 & T 0 & & T / > 0 ' , ( * 7 w

E w 0 % ) w w C w C i / ) / S , % / ) $ S & T / G ( 1 0 ' , & < ( S & T /

0 G G 1 , / ) > ( 1 & 0 ; / , 7 + ( % 7 , 7 & / % & _ , & T & T 0 & 7 T ( _ % , % f , ; - - 0 s & T / G ( ' & , ( % ( S & T / + T 0 ' 0 + D

& / ' , 7 & , + 7 & ( i / + ( % 7 , ) / ' / ) , % f , ; - - i , 7 & ( & T / ' , ; T & ( S & T / > / ' & , + 0 1 0 A , 7 $ S 0 ' / > / ' 7 /

> ( 1 & 0 ; / , 7 0 G G 1 , / ) s & T / + T 0 ' 0 + & / ' , 7 & , + 7 & ( & T / 1 / S & 0 ' / G / ' & , % / % & $ S & T / + * ' ' / % & & T ' ( * ; T

& T / ) , ( ) / T 0 7 & T / ) , ' / + & , ( % , % ) , + 0 & / ) , % f , ; - - 0 s & T / G ( ' & , ( % ( S & T / + T 0 ' 0 + & / ' , 7 & , + 7 & (

i / + ( % 7 , ) / ' / ) , 7 0 i ( > / & T / T ( ' , j ( % & 0 1 0 A , 7 s _ T , 1 / 0 ' / > / ' 7 0 1 , % ) , ' / + & , ( % _ ( * 1 ) ' / N * , ' /

& T / * 7 / ( S & T / + T 0 ' 0 + & / ' , 7 & , + 7 i / 1 ( _ & T / 0 A , 7 f ( ' & T / 5 0 } ( ' , & < ( S & T / ) / > , + / + T 0 ' 0 + D

& / ' , 7 & , + 7 & T 0 & 0 G G / 0 ' , % & T , 7 i ( ( k s & T / w C Y ( ' < 0 A , 7 Z _ , 1 1 i / & T / w w C 0 A , 7 s

_ T , 1 / & T / Y ( ' A 0 A , 7 Z _ , 1 1 i / & T / 0 A , 7

b % / ( S & T / , 5 G ( ' & 0 % & G 0 ' 0 5 / & / ' 7 S ( ' & T / ) , ( ) / , 7 & T / ' / 7 , 7 & 0 % + / 0 & & T / G ( , % & ( ' ' / D

; , ( % ( S ( G / ' 0 & , ( % $ S _ / + ( % 7 , ) / ' & T / + ( % ) * + & , ( % ' / ; , ( % ) / S , % / ) i < & T / ) , ' / + & , ( % ( S

0 % ) G ( 1 0 ' , & < ( S , % f , ; - - 0 Y * G G / ' D ' , ; T & N * 0 ) ' 0 % & ( S f , ; - - i Z s _ / _ , 1 1 S , % ) & T 0 &

& T / > 0 1 * / ( S & T / S ( ' _ 0 ' ) ' / 7 , 7 & 0 % + / s z s 0 7 ) / S , % / ) i < b T 5 7 1 0 _ , 7

z

5 }

} 5 5U

VY 7 T ( ' & + , ' + * , & Z

_ T / ' /

, 7 & T / S ( ' _ 0 ' ) > ( 1 & 0 ; / 0 + ' ( 7 7 & T / ) , ( ) / 0 % )

, 7 & T / S ( ' _ 0 ' ) + * ' ' / % & & T ' ( * ; T

& T / ) , ( ) /

The ideal diode, therefore, is a short circuit for the region of conduction.O ( % 7 , ) / ' & T / ' / ; , ( % ( S % / ; 0 & , > / 1 < 0 G G 1 , / ) G ( & / % & , 0 1 Y & T , ' ) N * 0 ) ' 0 % & Z ( S f , ; - - i s

z

5 }

} 5 5 ` VY ( G / % D + , ' + * , & Z

_ T / ' /

, 7 ' / > / ' 7 / > ( 1 & 0 ; / 0 + ' ( 7 7 & T / ) , ( ) / 0 % )

, 7 ' / > / ' 7 / + * ' ' / % & , % & T / ) , ( ) /

The ideal diode, therefore, is an open circuit in the region of nonconduction.

2

2

}}}}}

}}}}

Figure 1.2 (a) Conduction and (b) nonconduction states of the ideal diode asdetermined by the applied bias.

3

1.3 Semiconductor Materials

Figure 1.3 (a) Conductionand (b) nonconduction states ofthe ideal diode as determined bythe direction of conventionalcurrent established by the network.

How close will the forward or on resistance of a practical diode comparewith the desired 0-V level?

Is the reverse-bias resistance sufficiently large to permit an open-circuit ap-proximation?

1.3 SEMICONDUCTOR MATERIALS

The term conductor is applied to any material that will support a generousflow of charge when a voltage source of limited magnitude is applied acrossits terminals.

An insulator is a material that offers a very low level of conductivity underpressure from an applied voltage source.

A semiconductor, therefore, is a material that has a conductivity level some-where between the extremes of an insulator and a conductor.

r

V

V

V

5 r

r 5 }

} 5 }

V

} V

|

| 5 r }

} 5 r }

} 5 |r|

Figure 1.4 Defining the metricunits of resistivity.


TABLE 1.1 Typical Resistivity Values

Conductor Semiconductor Insulator

r > 2

V

r >

V

r >

V

r >

3

V

;

A bonding of atoms, strengthened by the sharing of electrons, is called cova-lent bonding.

Figure 1.5 Ge and Si single-crystal structure.

5

3

Intrinsic materials are those semiconductors that have been carefully refinedto reduce the impurities to a very low levelessentially as pure as can bemade available through modern technology.

3

;

An increase in temperature of a semiconductor can result in a substantial in-crease in the number of free electrons in the material.

Semiconductor materials such as Ge and Si that show a reduction in resis-tance with increase in temperature are said to have a negative temperaturecoefficient.

!

1.3 Semiconductor Materials

Figure 1.6 Atomic structure: (a) germanium;(b) silicon.

Figure 1.7 Covalent bonding of the siliconatom.

1.4 ENERGY LEVELS

"

The more distant the electron from the nucleus, the higher the energy state,and any electron that has left its parent atom has a higher energy state thanany electron in the atomic structure.


Figure 1.8 Energy levels: (a)discrete levels in isolated atomicstructures; (b) conduction and valence bands of an insulator,semiconductor, and conductor.

#

#

#

# $

%

&

%

'

%

'

'

(

)

#

* +

*

%

, - . / . 0 1 2 3 4 5

6

, - 7 / 8 9 0 1 2 : 0 5

6

, - . / ; . 0 1 2 : < = > 5

6

? @ > A B < C D E 3 0 F 4 G D @ H A G C D E

I

&

I

%

J

D @ H A G C D E

#

#

K

% L

)

L

)

M

(

L

)

K

#

N

"

O

!

P

5 Q R

R 5P

Q

Q

5

3 2 S

P

5 Q R 5

3 2 S T

5

3 2 S U

2 V T

" W

V T

X Y "

X Y

X Y

Z

X Y

[

1.5 EXTRINSIC MATERIALSn- AND p-TYPE

A semiconductor material that has been subjected to the doping process iscalled an extrinsic material.

n-Type Material

\ \

71.5 Extrinsic Materialsn- and p-Type

]

^

+

)

+


Figure 1.9 Antimony impurityin n-type material.

_

Diffused impurities with five valence electrons are called donor atoms.

X

Y

S `

`

5 a

;

Figure 1.10 Effect of donor impurities on the energy band structure.

#

'

%

b

)

c

I

K

%

d

K

% e

#

+

&

I

p-Type Material

\

91.5 Extrinsic Materialsn- and p-Type

Figure 1.11 Boron impurity inp-type material.

\

The diffused impurities with three valence electrons are called acceptor atoms.

Electron versus Hole Flow

f

Figure 1.12 Electron versushole flow.

Majority and Minority Carriers

In an n-type material (Fig. 1.13a) the electron is called the majority carrierand the hole the minority carrier.

In a p-type material the hole is the majority carrier and the electron is theminority carrier.


Figure 1.13 (a) n-type material; (b) p-type material.

g

g

h i

C j k 0

l i

C j k 0

b

g

m

]

g

m

1.6 SEMICONDUCTOR DIODE

T

This region of uncovered positive and negative ions is called the depletion re-gion due to the depletion of carriers in this region.

R

5 f

R

.

R

,

No Applied Bias (VD 5 0 V)n

W

In the absence of an applied bias voltage, the net flow of charge in any onedirection for a semiconductor diode is zero.

111.6 Semiconductor Diode

Figure 1.14 p-n junction withno external bias.

R

5

Reverse-Bias Condition (VD , 0 V)

R


Figure 1.17 Reverse-bias conditions for a semiconductordiode.

Figure 1.15 No-bias conditionsfor a semiconductor diode.

The current that exists under reverse-bias conditions is called the reverse sat-uration current and is represented by Is.

_

R

,

o

Forward-Bias Condition (VD . 0 V) f

"

A semiconductor diode is forward-biased when the association p-type and pos-itive and n-type and negative has been established.

Figure 1.16 Reverse-biased p-n junction.

13

R

"


Figure 1.18 Forward-biased p-njunction.

Figure 1.19 Silicon semiconductordiode characteristics.

p

q

r

s

t

u

v

p

p

q

r

s

t

u

v

K

q

K

K

t

w

w

p

w

q

w

r

]

%

b

+

+

^

x

%

$

% d y

$

]

z

{

w

K

p

]

w

K

q

]

w

K

r

]

N

% d

]

w

K

]

|

)

}

% d

w

~

#

K

K

r

]

)

_ _

5

o

2

o

5

5

h

h 5

h 5

h 5

5

1 V

_

_

5 o

2 o

R

R

5

R

5

5 o

2

5 o

2

5

_

R

o

5 2 o _

R

5

m

_

R 5

R

Zener Region _


Figure 1.20 Plot of ex.

Figure 1.21 Forward-bias conditions for a semiconductordiode.


Figure 1.22 Zener region.

R

o

P

5 }

}

\

\

f

R

R

2

f

R

The maximum reverse-bias potential that can be applied before entering theZener region is called the peak inverse voltage (referred to simply as the PIVrating) or the peak reverse voltage (denoted by PRV rating).

Silicon versus Germanium

h

h

\ \

R

R

R

R

5

R

5

Temperature Effects

The reverse saturation current Is will just about double in magnitude forevery 10C increase in temperature.


Figure 1.23 Comparison of Siand Ge semiconductor diodes.

171.7 Resistance Levels

Figure 1.24 Variation in diodecharacteristics with temperaturechange.

o

m

m 5

o

o

o

o

o

1.7 RESISTANCE LEVELS

DC or Static Resistance

R

5 }R

}


Figure 1.25 Determining the dcresistance of a diode at a particu-lar operating point.

In general, therefore, the lower the current through a diode the higher the dcresistance level.

5

5

R

5 2

5

5

5 }

} 5 }

} 5 V

EXAMPLE 1.1

Figure 1.26 Example 1.1

19

Figure 1.28 Determining the acresistance at a -point.

5 }D

D

}

D

D

D

In general, therefore, the lower the

-point of operation (smaller current orlower voltage) the higher the ac resistance.

5

5

5 }

} 5 }

} 5 V

5 2

5 2

5 2

m

5 }

} 5 }

m

} 5 V

AC or Dynamic Resistance

!

Figure 1.27 Defining thedynamic or ac resistance.


" # $ % & ' # (

5 )

5

5 *

5

5

5

D

5 *

2

5 *

D

5 2 5

+

5 }D

D

} 5 }

*

} 5 , - V

5

5

5 .

5

5

5

D

5 .

2

5

D

5 2 5

5 }D

D

} 5 }

} 5 V

/

+

0

5

0

5

1


EXAMPLE 1.2

Figure 1.29 Example 1.2

2 3 4 5

6

7 3 8 9 5

6

:

;

@

; A = ; A ? ; A

F:

F:

F2

F2


5

5

5 }

} 5 }

} 5 G V

V

5

5 /

5 }

} 5 }

/

} 5 G - H V

V

+

The derivative of a function at a point is equal to the slope of the tangent linedrawn at that point.

*

*

}

}

5 }

} I J K L M N O

2

P

}

} 5 }Q

R

S

}

1

@

}

} > }Q

R

S

}

T

h 5

U

T

R

5 }

h

} 5 }

} 5

Q

S 5Q V

1 . W 5 W 1 . W 5 / W

}Q

R

S

} 5 }

/

} > . / .

}

} 5 . / .

5 X

}

} > }

}

5 }

} Y Z[ \ ]


h 5

^

_

`

9

`

^

9 5 }

} 1 `

`

V

V

V a

5 }

} 5 }

} 5 - V

V

`

V a

h 5

5 1} }2 5 1}

}2 5

. V

5 H V

V

` b

`

`

`

`

c

Average AC Resistance

.

d

e

b


.

f g 5 }D

D

} * h i j i k h i l /

.

D

5

2

5

D

5 2 5

f g 5 }D

D

} 5 }

} 5 V

5

V

/

As with the dc and ac resistance levels, the lower the level of currents used todetermine the average resistance the higher the resistance level.

Summary Table

m

Figure 1.30 Determining the average ac resistance between indicated limits.

6

3 4 5

2

7 3 8 9 5

6

:

;

E

:

x

8 4

}n y z u { y | t

| { t 8 u v s t { y { s u { y t s

s y p u { s

9 y q t y t v

5 }D

D

2

:

}| n y z u { y | t r s q t u s

u { y y s y y { u 8 u s r

p z p y q t s u p {

1.8 DIODE EQUIVALENT CIRCUITS

An equivalent circuit is a combination of elements properly chosen to bestrepresent the actual terminal characteristics of a device, system, or such in aparticular operating region.

Piecewise-Linear Equivalent Circuit

.

d

b

.

T

.

!

251.8 Diode Equivalent Circut

T

.

N

.

f g

N

m

f g

T

/

5

5

f g 5 }D

D

} *h i j i k h i j

5}

2

2

}5 }

} 5 V

.

Simplified Equivalent Circuit

f g

f g

Figure 1.32 Components of the piecewise-linear equivalent circuit.

6

2

6

:

2

; A B

4

= ;

6

2

7 | y t | u p | y

6

:

Figure 1.31 Defining thepiecewise-linear equivalent circuitusing straight-line segments to approximate the characteristic curve.


. .

1

Ideal Equivalent Circuit

f g

. *

1

!

^

Figure 1.34 Ideal diode and its characteristics.

Summary Table

.

1

Figure 1.33 Simplified equivalent circuit for the silicon semiconductor diode.

6

2

6

:

;

2

; A B

4

;

6

:

6

2

7 | y t | u p | y

2

2

; A B

4

271.9 Diode Specification Sheets

1.9 DIODE SPECIFICATION SHEETS0

m

+

.

*

I

!

P

1

T

T

0

+

f 5

TABLE 1.3 Diode Equivalent Circuits (Models)

Type Conditions Model Characteristics

u y v y u r y u { y t q 8 p | y

u 8 u z u y | 8 p | y w

@

7 | y t | y u v y w

@

@2


5

N 5

] ]

h

f

i

Z

>

Figure 1.35 Electrical characteristics of a high-voltage, low-leakage diode.

291.9 Diode Specification Sheets

X

.

.

1

Figure 1.36 Terminal characteristics of a high-voltage diode.

T

+

+

+

1

m

I

. W

5 W1

5 m

W

5

W

1

5

P

1 +

5

5

. . .

W

1

e

d

.

0 +

5

.

+

5

N 5

+

5

U +

5

5

5 m

5 m

+

5

5

m

+

. m

.

T

m

5

^

V

V

+

d

e

b

T

f g 5 .

h

Z

f

R

d

b

.

R

e

b


311.10 Transition and Diffusion Capacitance

!

1.10 TRANSITION AND DIFFUSIONCAPACITANCE

V

5

X

p

V

!

In the reverse-bias region we have the transition- or depletion-region capaci-tance (CT), while in the forward-bias region we have the diffusion (CD) orstorage capacitance.

5 e

e

t 5

Figure 1.37 Transition and diffusion capacitance versus applied bias for a silicon diode.

; ; A >

$

&

8

=

'

$

&

#

&

'

$

#

(

G

&

8

9

>

"

!

$ H

;

"

#

I

J

>

?

K

.

0 / .

/ .

@ / .

.

0 . 0

.

L , B

M

+ ,

-

E

N

3

4

!

"

#

$ %

O

O

$

?

;

=

>

#

8

!

9

"

Z

!

[

"

\

"

Y

$

>

=

>

#

8

!

9

"

Z

!

;

( ? @

? '

A

B

)

1

C

0 D

>

?

' ? >

D

0

C

1 )

B A ? '

' (

C

E

7

: F < G H =

I

,

4

* @

+

,

4

2 3 @

I

, -

4

@

J

J

K L M

;

7

G H N

Figure 2.6 Solution to Example 2.1 using the diode approximate model.

+ ,

' ( ) *

+ , -

.

/

A ( >

C

2 3

.

/

L M

;

7

G H N

? '

A

B

)

1

C

0 D

>

?

' ? >

D

0

C

1 )

B A ? '

' (

C

E

7

: F < G H =

I

,

4

* @

+ ,

4

2 3 @

I , -

' ( ) *

EXAMPLE 2.3

+ ,

' ( ) *

+

, - ./ 0

( 1 2 3

./

? '

A

B

)

1

C

0 D

>

?

' ? >

D

0

C

1 )

B A ? '

' (

C

I

,

4

* @

+ ,

4

2 3 @

I , -

' ( ) *

E

7

: F < G H =

L M

;

7

G H N

5

5

5 " #

56 Chapter 2 Diode Applications

EXAMPLE 2.4

EXAMPLE 2.4

5

5 O

Figure 2.7 Solution to Example2.2 using the diode approximatemodel.

&

P

Q

Q

Q

2.3 DIODE APPROXIMATIONS

The primary purpose of this book is to develop a general knowledge of the be-havior, capabilities, and possible areas of application of a device in a mannerthat will minimize the need for extensive mathematical developments.

&

R S T

R

S T

572.3 Diode Approximations

Figure 2.8 Solution to Example 2.1 using the ideal diode model.

Q

U

$ V W 5 X Y Z V Y[ \ \ ] ^ _ ` ^ _ a b c d b b c \

X Y e

d _ a

X Y Z V

^ _ b c \ \ f g ^ h d i \ _ b j ^ k j g ^ b l d k \ _ m b n o p q r q o p q o s

l m g k j \ l m t \ _ \ k u v w g b d k \ b c \ k \ l ^ ` ] i v b m k \ ` ^ _ a g l b c d b b c \ k \ ^ l d x ] k ^ j \ b m ] d v y b m

b g k _ m _ d a ^ m a \

Y z

_ ^ l m i d b \ a a ^ m a \ m _ d i d w m k d b m k v b d w i \ { ^ i i _ m b ^ _ a ^ j d b \

X Y e

m k

X Y Z

V

^ t d h m i b ` \ b \ k ^ l ] i d j \ a d j k m l l ^ b l b \ k ` ^ _ d i l

Y |

c \ l g ] ] i ^ \ l l ] \ j ^ t v b c \ h m i b d u \ a k m ]

d j k m l l \ d j c { c \ _ b c \ a \ h ^ j \ ^ l x m _ y d _ a l ] \ j ^ t v b c d b b c \ a ^ m a \ h m i b d u \ ` g l b w \ d b

i \ d l b b c \ ^ _ a ^ j d b \ a i \ h \ i w \ t m k \ j m _ a g j b ^ m _ j d _ w \ \ l b d w i ^ l c \ a

Y


TABLE 2.1 Approximate and Ideal Semiconductor Diode Models

} _ b c \ _ \ ~ b t \ { l \ j b ^ m _ l { \ a \ ` m _ l b k d b \ b c \ ^ ` ] d j b m t b c \ ` m a \ i l m t

|

d w i \

Y

m _

b c \ d _ d i v l ^ l m t a ^ m a \ j m _ t ^ u g k d b ^ m _ l

Y

m k b c m l \ l ^ b g d b ^ m _ l { c \ k \ b c \ d ] ] k m ~ ^ ` d b \ \ f g ^ h

d i \ _ b j ^ k j g ^ b { ^ i i w \ \ ` ] i m v \ a b c \ a ^ m a \ l v ` w m i { ^ i i d ] ] \ d k d l l c m { _ ^ _

^ u

Y

Y

d

t m k b c \ l ^ i ^ j m _ d _ a u \ k ` d _ ^ g ` a ^ m a \ l

Y

} t j m _ a ^ b ^ m _ l d k \ l g j c b c d b b c \ ^ a \ d i a ^ m a \ ` m a \ i

j d _ w \ \ ` ] i m v \ a b c \ a ^ m a \ l v ` w m i { ^ i i d ] ] \ d k d l l c m { _ ^ _

^ u

Y

Y

w

Y

2.4 SERIES DIODE CONFIGURATIONSWITH DC INPUTS

} _ b c ^ l l \ j b ^ m _ b c \ d ] ] k m ~ ^ ` d b \ ` m a \ i ^ l g b ^ i ^ \ a b m ^ _ h \ l b ^ u d b \ d _ g ` w \ k m t l \ k ^ \ l

a ^ m a \ j m _ t ^ u g k d b ^ m _ l { ^ b c a j ^ _ ] g b l

Y |

c \ j m _ b \ _ b { ^ i i \ l b d w i ^ l c d t m g _ a d b ^ m _ ^ _ a ^ m a \

d _ d i v l ^ l b c d b { ^ i i j d k k v m h \ k ^ _ b m b c \ l \ j b ^ m _ l d _ a j c d ] b \ k l b m t m i i m {

Y |

c \ ] k m j \ a g k \

a \ l j k ^ w \ a j d _ ^ _ t d j b w \ d ] ] i ^ \ a b m _ \ b { m k l { ^ b c d _ v _ g ` w \ k m t a ^ m a \ l ^ _ d h d k ^ \ b v

m t j m _ t ^ u g k d b ^ m _ l

Y

m k \ d j c j m _ t ^ u g k d b ^ m _ b c \ l b d b \ m t \ d j c a ^ m a \ ` g l b t ^ k l b w \ a \ b \ k ` ^ _ \ a

Y

c ^ j c

a ^ m a \ l d k \ x m _ y d _ a { c ^ j c d k \ x m t t y _ j \ a \ b \ k ` ^ _ \ a b c \ d ] ] k m ] k ^ d b \ \ f g ^ h d i \ _ b d l

a \ t ^ _ \ a ^ _ \ j b ^ m _

Y Z

j d _ w \ l g w l b ^ b g b \ a d _ a b c \ k \ ` d ^ _ ^ _ u ] d k d ` \ b \ k l m t b c \ _ \ b

{ m k a \ b \ k ` ^ _ \ a

Y

In general, a diode is in the on state if the current established by theapplied sources is such that its direction matches that of the arrow in thediode symbol, and VD $ 0.7 V for silicon and VD $ 0.3 V for germanium.

m k \ d j c j m _ t ^ u g k d b ^ m _ q o s k \ ] i d j \ b c \ a ^ m a \ l { ^ b c k \ l ^ l b ^ h \ \ i \ ` \ _ b l d _ a

_ m b \ b c \ k \ l g i b ^ _ u j g k k \ _ b a ^ k \ j b ^ m _ d l \ l b d w i ^ l c \ a w v b c \ d ] ] i ^ \ a h m i b d u \ l x ] k \ l l g k \ y

Y

} t b c \ k \ l g i b ^ _ u a ^ k \ j b ^ m _ ^ l d x ` d b j c y { ^ b c b c \ d k k m { ^ _ b c \ a ^ m a \ l v ` w m i j m _ a g j

b ^ m _ b c k m g u c b c \ a ^ m a \ { ^ i i m j j g k d _ a b c \ a \ h ^ j \ ^ l ^ _ b c \ x m _ y l b d b \

Y |

c \ a \ l j k ^ ] b ^ m _

d w m h \ ^ l m t j m g k l \ j m _ b ^ _ u \ _ b m _ b c \ l g ] ] i v c d h ^ _ u d h m i b d u \ u k \ d b \ k b c d _ b c \ x b g k _

m _ y h m i b d u \ m t \ d j c a ^ m a \

Y

} t d a ^ m a \ ^ l ^ _ b c \ x m _ y l b d b \ m _ \ j d _ \ ^ b c \ k ] i d j \ d

X Y e

V

a k m ] d j k m l l b c \

\ i \ ` \ _ b m k b c \ _ \ b { m k j d _ w \ k \ a k d { _ { ^ b c b c \ \ f g ^ h d i \ _ b j ^ k j g ^ b d l a \ t ^ _ \ a ^ _

|

d w i \

Y Y

} _ b ^ ` \ b c \ ] k \ t \ k \ _ j \ { ^ i i ] k m w d w i v l ^ ` ] i v w \ b m ^ _ j i g a \ b c \

X Y e

V

a k m ] d j k m l l

\ d j c x m _ y a ^ m a \ d _ a a k d { d i ^ _ \ b c k m g u c \ d j c a ^ m a \ ^ _ b c \ x m t t y m k m ] \ _ l b d b \

Y

} _ ^

b ^ d i i v c m { \ h \ k b c \ l g w l b ^ b g b ^ m _ ` \ b c m a { ^ i i w \ g b ^ i ^ \ a b m \ _ l g k \ b c d b b c \ ] k m ] \ k h m i b

d u \ d _ a j g k k \ _ b i \ h \ i l d k \ a \ b \ k ` ^ _ \ a

Y

|

c \ l \ k ^ \ l j ^ k j g ^ b m t

^ u

Y

Y X

a \ l j k ^ w \ a ^ _ l m ` \ a \ b d ^ i ^ _ \ j b ^ m _

Y

{ ^ i i w \ g l \ a

b m a \ ` m _ l b k d b \ b c \ d ] ] k m d j c a \ l j k ^ w \ a ^ _ b c \ ] d k d u k d ] c l d w m h \

Y |

c \ l b d b \ m t b c \ a ^ m a \

^ l t ^ k l b a \ b \ k ` ^ _ \ a w v ` \ _ b d i i v k \ ] i d j ^ _ u b c \ a ^ m a \ { ^ b c d k \ l ^ l b ^ h \ \ i \ ` \ _ b d l l c m { _

^ _

^ u

Y

Y Y |

c \ k \ l g i b ^ _ u a ^ k \ j b ^ m _ m t ^ l d ` d b j c { ^ b c b c \ d k k m { ^ _ b c \ a ^ m a \ l v `

w m i d _ a l ^ _ j \

. b c \ a ^ m a \ ^ l ^ _ b c \ x m _ y l b d b \

Y |

c \ _ \ b { m k ^ l b c \ _ k \ a k d { _ d l

l c m { _ ^ _

^ u

Y

Y

{ ^ b c b c \ d ] ] k m ] k ^ d b \ \ f g ^ h d i \ _ b ` m a \ i t m k b c \ t m k { d k a w ^ d l \ a l ^ i

^ j m _ a ^ m a \

Y

m b \ t m k t g b g k \ k \ t \ k \ _ j \ b c d b b c \ ] m i d k ^ b v m t ^ l b c \ l d ` \ d l { m g i a k \

l g i b ^ t ^ _ t d j b b c \ a ^ m a \ { \ k \ d k \ l ^ l b ^ h \ \ i \ ` \ _ b

Y |

c \ k \ l g i b ^ _ u h m i b d u \ d _ a j g k k \ _ b

i \ h \ i l d k \ b c \ t m i i m { ^ _ u

5

Y

5

2

Y

5

5 }

}

Y

592.4 Series Diode Configurations with DC Inputs

Figure 2.9 (a) Approximatemodel notation; (b) ideal diodenotation.

Figure 2.10 Series diode config-uration.

Figure 2.11 Determining thestate of the diode of Fig. 2.10.

Figure 2.12 Substituting theequivalent model for the ondiode of Fig. 2.10.

} _

^ u

Y

Y Z

b c \ a ^ m a \ m t

^ u

Y

Y X

c d l w \ \ _ k \ h \ k l \ a

Y

\ _ b d i i v k \ ] i d j ^ _ u b c \ a ^ m a \

{ ^ b c d k \ l ^ l b ^ h \ \ i \ ` \ _ b d l l c m { _ ^ _

^ u

Y

Y

{ ^ i i k \ h \ d i b c d b b c \ k \ l g i b ^ _ u j g k k \ _ b a ^

k \ j b ^ m _ a m \ l _ m b ` d b j c b c \ d k k m { ^ _ b c \ a ^ m a \ l v ` w m i

Y |

c \ a ^ m a \ ^ l ^ _ b c \ x m t t y l b d b \

k \ l g i b ^ _ u ^ _ b c \ \ f g ^ h d i \ _ b j ^ k j g ^ b m t

^ u

Y

Y Y

g \ b m b c \ m ] \ _ j ^ k j g ^ b b c \ a ^ m a \ j g k

k \ _ b ^ l

X z

d _ a b c \ h m i b d u \ d j k m l l b c \ k \ l ^ l b m k ^ l b c \ t m i i m { ^ _ u

5

5

5

X z

5

|

c \ t d j b b c d b

5 X V{ ^ i i \ l b d w i ^ l c h m i b l d j k m l l b c \ m ] \ _ j ^ k j g ^ b d l a \ t ^ _ \ a w v

[ ^ k j c c m t t l h m i b d u \ i d {

Y z

i { d v l \ \ ] ^ _ ` ^ _ a b c d b g _ a \ k d _ v j ^ k j g ` l b d _ j \ l a j d j

^ _ l b d _ b d _ \ m g l h d i g \ l ] g i l \ l d _ a l m m _ [ ^ k j c c m t t l h m i b d u \ i d { ` g l b w \ l d b ^ l t ^ \ a

m k b c \ l \ k ^ \ l a ^ m a \ j m _ t ^ u g k d b ^ m _ m t

^ u

Y

Y

a \ b \ k ` ^ _ \ d _ a

Y

^ _ j \ b c \ d ] ] i ^ \ a h m i b d u \ \ l b d w i ^ l c \ l d j g k k \ _ b ^ _ b c \ j i m j { ^ l \ a ^ k \ j b ^ m _ b m ` d b j c b c \

d k k m { m t b c \ l v ` w m i d _ a b c \ a ^ m a \ ^ l ^ _ b c \ x m _ y l b d b \

5

5

2

5 V 2 X Y e V 5

5

5 }

} 5 }

e

Y

Y Z

V

V} >

\ ] \ d b ~ d ` ] i \

Y

{ ^ b c b c \ a ^ m a \ k \ h \ k l \ a

Y

\ ` m h ^ _ u b c \ a ^ m a \ { \ t ^ _ a b c d b b c \ a ^ k \ j b ^ m _ m t ^ l m ] ] m l ^ b \ b m b c \ d k k m { ^ _ b c \

a ^ m a \ l v ` w m i d _ a b c \ a ^ m a \ \ f g ^ h d i \ _ b ^ l b c \ m ] \ _ j ^ k j g ^ b _ m ` d b b \ k { c ^ j c ` m a \ i ^ l

\ ` ] i m v \ a

Y |

c \ k \ l g i b ^ l b c \ _ \ b { m k m t

^ u

Y

Y e

{ c \ k \

5 a g \ b m b c \ m ] \ _ j ^ k

j g ^ b

Y

^ _ j \

5

5

X

5 X V Y z] ] i v ^ _ u [ ^ k j c c m t t l h m i b d u \ i d { d k m g _ a b c \

j i m l \ a i m m ] v ^ \ i a l

2

2

5 Xd _ a

5

2

5

2 X 5

5


EXAMPLE 2.6

EXAMPLE 2.7

Figure 2.13 Reversing the diodeof Fig. 2.10.

Figure 2.14 Determining thestate of the diode of Fig. 2.13.

Figure 2.15 Substituting theequivalent model for the offdiode of Figure 2.13.

Figure 2.16 Circuit for Example2.6.

Figure 2.17 Determining theunknown quantities for Example2.7.


EXAMPLE 2.8

Figure 2.18 Source notation.

Figure 2.19 Series diode circuitfor Example 2.8.

} _ ] d k b ^ j g i d k _ m b \ ^ _ ~ d ` ] i \

Y e

b c \ c ^ u c h m i b d u \ d j k m l l b c \ a ^ m a \ \ h \ _ b c m g u c

^ b ^ l d _ x m t t y l b d b \

Y |

c \ j g k k \ _ b ^ l \ k m w g b b c \ h m i b d u \ ^ l l ^ u _ ^ t ^ j d _ b

Y

m k k \ h ^ \ { ] g k

] m l \ l \ \ ] b c \ t m i i m { ^ _ u ^ _ ` ^ _ a t m k b c \ d _ d i v l ^ l b m t m i i m {

Y z

_ m ] \ _ j ^ k j g ^ b j d _ c d h \ d _ v h m i b d u \ d j k m l l ^ b l b \ k ` ^ _ d i l w g b b c \ j g k k \ _ b ^ l d i

{ d v l

X z Y

Y z

l c m k b j ^ k j g ^ b c d l d

X

V

a k m ] d j k m l l ^ b l b \ k ` ^ _ d i l w g b b c \ j g k k \ _ b ^ l i ^ ` ^ b \ a

m _ i v w v b c \ l g k k m g _ a ^ _ u _ \ b { m k

Y

} _ b c \ _ \ ~ b \ ~ d ` ] i \ b c \ _ m b d b ^ m _ m t

^ u

Y

Y

{ ^ i i w \ \ ` ] i m v \ a t m k b c \ d ] ] i ^ \ a h m i b

d u \

Y

} b ^ l d j m ` ` m _ ^ _ a g l b k v _ m b d b ^ m _ d _ a m _ \ { ^ b c { c ^ j c b c \ k \ d a \ k l c m g i a w \ j m ` \ h \ k v

t d ` ^ i ^ d k

Y

g j c _ m b d b ^ m _ d _ a m b c \ k a \ t ^ _ \ a h m i b d u \ i \ h \ i l d k \ b k \ d b \ a t g k b c \ k ^ _ c d ] b \ k

Y

m k b c \ l \ k ^ \ l a ^ m a \ j m _ t ^ u g k d b ^ m _ m t

^ u

Y

Y

a \ b \ k ` ^ _ \

d _ a

z

i b c m g u c b c \ x ] k \ l l g k \ y \ l b d w i ^ l c \ l d j g k k \ _ b { ^ b c b c \ l d ` \ a ^ k \ j b ^ m _ d l b c \ d k k m {

l v ` w m i b c \ i \ h \ i m t d ] ] i ^ \ a h m i b d u \ ^ l ^ _ l g t t ^ j ^ \ _ b b m b g k _ b c \ l ^ i ^ j m _ a ^ m a \ x m _

Y

y

|

c \

] m ^ _ b m t m ] \ k d b ^ m _ m _ b c \ j c d k d j b \ k ^ l b ^ j l ^ l l c m { _ ^ _

^ u

Y

Y

X

\ l b d w i ^ l c ^ _ u b c \ m ] \ _

j ^ k j g ^ b \ f g ^ h d i \ _ b d l b c \ d ] ] k m ] k ^ d b \ d ] ] k m ~ ^ ` d b ^ m _

Y |

c \ k \ l g i b ^ _ u h m i b d u \ d _ a j g k k \ _ b

i \ h \ i l d k \ b c \ k \ t m k \ b c \ t m i i m { ^ _ u

5

5

5

5

X z

Y

V 5 d _ a

5

5

Figure 2.20 Operating pointwith E 5 0.5 V.

\ b \ k ` ^ _ \ d _ a t m k b c \ l \ k ^ \ l j ^ k j g ^ b m t

^ u

Y

Y

Y


EXAMPLE 2.9

EXAMPLE 2.10

Figure 2.24 Determining the state of thediodes of Figure 2.23.

Figure 2.25 Substituting the equivalentstate for the open diode.

z

_ d b b d j l ^ ` ^ i d k b m b c d b d ] ] i ^ \ a ^ _ ~ d ` ] i \

Y

{ ^ i i k \ h \ d i b c d b b c \ k \ l g i b ^ _ u j g k k \ _ b

c d l b c \ l d ` \ a ^ k \ j b ^ m _ d l b c \ d k k m { c \ d a l m t b c \ l v ` w m i l m t w m b c a ^ m a \ l d _ a b c \ _ \ b

{ m k m t

^ u

Y

Y

k \ l g i b l w \ j d g l \

5

V .

X Y e V 1 X Y Z V

5 V Y m b \ b c \ k \

a k d { _ l g ] ] i v m t

V

d _ a b c \ ] m i d k ^ b v m t

d j k m l l b c \

Y

Vk \ l ^ l b m k

Y |

c \ k \ l g i b ^ _ u

h m i b d u \

5

2

2

5

V 2 X Y e V 2 X Y Z V 5

d _ a

5

5 }

} 5 }

} 5 }

Y

V

V} >

\ b \ k ` ^ _ \ d _ a t m k b c \ j ^ k j g ^ b m t

^ u

Y

Y

Z Y

\ ` m h ^ _ u b c \ a ^ m a \ l d _ a a \ b \ k ` ^ _ ^ _ u b c \ a ^ k \ j b ^ m _ m t b c \ k \ l g i b ^ _ u j g k k \ _ b { ^ i i k \

l g i b ^ _ b c \ j ^ k j g ^ b m t

^ u

Y

Y

Y |

c \ k \ ^ l d ` d b j c ^ _ j g k k \ _ b a ^ k \ j b ^ m _ t m k b c \ l ^ i ^ j m _

a ^ m a \ w g b _ m b t m k b c \ u \ k ` d _ ^ g ` a ^ m a \

Y |

c \ j m ` w ^ _ d b ^ m _ m t d l c m k b j ^ k j g ^ b ^ _ l \ k ^ \ l

{ ^ b c d _ m ] \ _ j ^ k j g ^ b d i { d v l k \ l g i b l ^ _ d _ m ] \ _ j ^ k j g ^ b d _ a

5 d l l c m { _ ^ _

^ u

Y

Y

Y

Figure 2.21 Circuit for Exam-ple 2.9.



|c \ f g \ l b ^ m _ k \ ` d ^ _ l d l b m { c d b b m l g w l b ^ b g b \ t m k b c \ l ^ i ^ j m _ a ^ m a \

Y

m k b c \ d _ d i v

l ^ l b m t m i i m { ^ _ b c ^ l d _ a l g j j \ \ a ^ _ u j c d ] b \ k l l ^ ` ] i v k \ j d i i t m k b c \ d j b g d i ] k d j b ^ j d i

a ^ m a \ b c d b { c \ _

5 X z

5 X V d _ a h ^ j \ h \ k l d d l a \ l j k ^ w \ a t m k b c \ _ m w ^ d l

l ^ b g d b ^ m _ ^ _ c d ] b \ k

Y |

c \ j m _ a ^ b ^ m _ l a \ l j k ^ w \ a w v

5 X zd _ a

5 X Vd k \ ^ _

a ^ j d b \ a ^ _

^ u

Y

Y

Y


EXAMPLE 2.11

Figure 2.28 Determining the state of thediode for the network of Fig. 2.27.

Figure 2.29 Determining the unknown quantities for the net-work of Fig. 2.27.

\ b \ k ` ^ _ \ d _ a t m k b c \ l \ k ^ \ l a j j m _ t ^ u g k d b ^ m _ m t

^ u

Y

Y

e Y

|

c \ l m g k j \ l d k \ a k d { _ d _ a b c \ j g k k \ _ b a ^ k \ j b ^ m _ ^ _ a ^ j d b \ a d l l c m { _ ^ _

^ u

Y

Y

Y |

c \

a ^ m a \ ^ l ^ _ b c \ x m _ y l b d b \ d _ a b c \ _ m b d b ^ m _ d ] ] \ d k ^ _ u ^ _

^ u

Y

Y

^ l ^ _ j i g a \ a b m ^ _ a ^

j d b \ b c ^ l l b d b \

Y

m b \ b c d b b c \ x m _ y l b d b \ ^ l _ m b \ a l ^ ` ] i v w v b c \ d a a ^ b ^ m _ d i

5 X Y e V

5

5

5

X z

5 X Vd _ a

5

5

5

z

] ] i v ^ _ u [ ^ k j c c m t t l h m i b d u \ i d { ^ _ d j i m j { ^ l \ a ^ k \ j b ^ m _ u ^ h \ l g l

2

2

2

5 Xd _ a

5

2

2

5

V 2 X 2 X

5 { ^ b c

5

Figure 2.26 Determining theunknown quantities for the circuitof Example 2.10.


m _ b c \ t ^ u g k \

Y |

c ^ l \ i ^ ` ^ _ d b \ l b c \ _ \ \ a b m k \ a k d { b c \ _ \ b { m k d _ a d h m ^ a l d _ v j m _ t g

l ^ m _ b c d b ` d v k \ l g i b t k m ` b c \ d ] ] \ d k d _ j \ m t d _ m b c \ k l m g k j \

Y z

l ^ _ a ^ j d b \ a ^ _ b c \ ^ _

b k m a g j b ^ m _ b m b c ^ l l \ j b ^ m _ b c ^ l ^ l ] k m w d w i v b c \ ] d b c d _ a _ m b d b ^ m _ b c d b m _ \ { ^ i i b d \

{ c \ _ d i \ h \ i m t j m _ t ^ a \ _ j \ c d l w \ \ _ \ l b d w i ^ l c \ a ^ _ b c \ d _ d i v l ^ l m t a ^ m a \ j m _ t ^ u g k d

b ^ m _ l

Y

} _ b ^ ` \ b c \ \ _ b ^ k \ d _ d i v l ^ l { ^ i i w \ ] \ k t m k ` \ a l ^ ` ] i v w v k \ t \ k k ^ _ u b m b c \ m k ^ u ^

_ d i _ \ b { m k

Y

\ j d i i b c d b d k \ h \ k l \ w ^ d l \ a a ^ m a \ j d _ l ^ ` ] i v w \ ^ _ a ^ j d b \ a w v d i ^ _ \

b c k m g u c b c \ a \ h ^ j \

Y

|

c \ k \ l g i b ^ _ u j g k k \ _ b b c k m g u c b c \ j ^ k j g ^ b ^ l

}

5}

1

1

2

}5 5 }

Y

Y Z

V

V

}

> d _ a b c \ h m i b d u \ l d k \

5

5

Y X e

`

z

Y e

V

5

5

5

Y X e

`

z

Y

V

5

z

] ] i v ^ _ u [ ^ k j c c m t t l h m i b d u \ i d { b m b c \ m g b ] g b l \ j b ^ m _ ^ _ b c \ j i m j { ^ l \ a ^ k \ j b ^ m _ { ^ i i

k \ l g i b ^ _

2

1

2

5 Xd _ a

5

2

5 Y V 2 V 5 2

|

c \ ` ^ _ g l l ^ u _ ^ _ a ^ j d b \ l b c d b c d l d ] m i d k ^ b v m ] ] m l ^ b \ b m b c d b d ] ] \ d k ^ _ u ^ _

^ u

Y

Y

e Y

2.5 PARALLEL AND SERIESPARALLELCONFIGURATIONS

|

c \ ` \ b c m a l d ] ] i ^ \ a ^ _ \ j b ^ m _

Y

j d _ w \ \ ~ b \ _ a \ a b m b c \ d _ d i v l ^ l m t ] d k d i i \ i d _ a

l \ k ^ \ l ] d k d i i \ i j m _ t ^ u g k d b ^ m _ l

Y

m k \ d j c d k \ d m t d ] ] i ^ j d b ^ m _ l ^ ` ] i v ` d b j c b c \ l \

f g \ _ b ^ d i l \ k ^ \ l m t l b \ ] l d ] ] i ^ \ a b m l \ k ^ \ l a ^ m a \ j m _ t ^ u g k d b ^ m _ l

Y

\ b \ k ` ^ _ \

d _ a

t m k b c \ ] d k d i i \ i a ^ m a \ j m _ t ^ u g k d b ^ m _ m t

^ u

Y

Y Z X Y

X V 1 V 2 X Y e V}}}

Y e

V 1

Y

V


EXAMPLE 2.12

m k b c \ d ] ] i ^ \ a h m i b d u \ b c \ x ] k \ l l g k \ y m t b c \ l m g k j \ ^ l b m \ l b d w i ^ l c d j g k k \ _ b b c k m g u c

\ d j c a ^ m a \ ^ _ b c \ l d ` \ a ^ k \ j b ^ m _ d l l c m { _ ^ _

^ u

Y

Y Z Y

^ _ j \ b c \ k \ l g i b ^ _ u j g k k \ _ b a ^

k \ j b ^ m _ ` d b j c \ l b c d b m t b c \ d k k m { ^ _ \ d j c a ^ m a \ l v ` w m i d _ a b c \ d ] ] i ^ \ a h m i b d u \ ^ l

u k \ d b \ k b c d _

X Y e V

w m b c a ^ m a \ l d k \ ^ _ b c \ x m _ y l b d b \

Y |

c \ h m i b d u \ d j k m l l ] d k d i i \ i \ i \

` \ _ b l ^ l d i { d v l b c \ l d ` \ d _ a

5

Figure 2.30 Network for Exam-ple 2.12.

|c \ j g k k \ _ b

5 }

} 5 }

2

} 5 } X

X

V

Y Z

2

Z

X

V

Y e V

} 5

z

l l g ` ^ _ u a ^ m a \ l m t l ^ ` ^ i d k j c d k d j b \ k ^ l b ^ j l { \ c d h \

5

5 }

} 5 }

Y

`

z

} 5

~ d ` ] i \

Y

a \ ` m _ l b k d b \ a m _ \ k \ d l m _ t m k ] i d j ^ _ u a ^ m a \ l ^ _ ] d k d i i \ i

Y

} t b c \ j g k

k \ _ b k d b ^ _ u m t b c \ a ^ m a \ l m t

^ u

Y

Y Z X

^ l m _ i v

X

`

z

d j g k k \ _ b m t

Y

`

z

{ m g i a

a d ` d u \ b c \ a \ h ^ j \ ^ t ^ b d ] ] \ d k \ a d i m _ \ ^ _

^ u

Y

Y Z X Y

v ] i d j ^ _ u b { m ^ _ ] d k d i i \ i b c \

j g k k \ _ b ^ l i ^ ` ^ b \ a b m d l d t \ h d i g \ m t

Y X

`

z

{ ^ b c b c \ l d ` \ b \ k ` ^ _ d i h m i b d u \

Y

\ b \ k ` ^ _ \ b c \ j g k k \ _ b t m k b c \ _ \ b { m k m t

^ u

Y

Y Z

Y

652.5 Parallel and SeriesParallel Configurations

EXAMPLE 2.13

\ a k d { ^ _ u b c \ _ \ b { m k d l l c m { _ ^ _

^ u

Y

Y Z Z

k \ h \ d i l b c d b b c \ k \ l g i b ^ _ u j g k k \ _ b a ^

k \ j b ^ m _ ^ l l g j c d l b m b g k _ m _ a ^ m a \ d _ a b g k _ m t t a ^ m a \

Y |

c \ k \ l g i b ^ _ u j g k k \ _ b

^ l b c \ _

5}

2

2

}5 >

X V 2 V 2 X Y e V}}}

Y

V

Figure 2.31 Determining theunknown quantities for the net-work of Example 2.12.


Figure 2.33 Determining theunknown quantities for the net-work of Example 2.13.

\ b \ k ` ^ _ \ b c \ h m i b d u \

t m k b c \ _ \ b { m k m t

^ u

Y

Y Z Y

} _ ^ b ^ d i i v ^ b { m g i a d ] ] \ d k b c d b b c \ d ] ] i ^ \ a h m i b d u \ { ^ i i b g k _ w m b c a ^ m a \ l x m _

Y

y m { \ h \ k

^ t w m b c { \ k \ x m _ y b c \

X Y e

V

a k m ] d j k m l l b c \ l ^ i ^ j m _ a ^ m a \ { m g i a _ m b ` d b j c b c \

X Y Z V

d j k m l l b c \ u \ k ` d _ ^ g ` a ^ m a \ d l k \ f g ^ k \ a w v b c \ t d j b b c d b b c \ h m i b d u \ d j k m l l ] d k d i i \ i \ i

\ ` \ _ b l ` g l b w \ b c \ l d ` \

Y |

c \ k \ l g i b ^ _ u d j b ^ m _ j d _ w \ \ ~ ] i d ^ _ \ a l ^ ` ] i v w v k \ d i ^ ^ _ u

b c d b { c \ _ b c \ l g ] ] i v ^ l b g k _ \ a m _ ^ b { ^ i i ^ _ j k \ d l \ t k m `

X

b m

V

m h \ k d ] \ k ^ m a m t

b ^ ` \ d i b c m g u c ] k m w d w i v ` \ d l g k d w i \ ^ _ ` ^ i i ^ l \ j m _ a l

Y z

b b c \ ^ _ l b d _ b a g k ^ _ u b c \ k ^ l \

b c d b

X Y Z V

^ l \ l b d w i ^ l c \ a d j k m l l b c \ u \ k ` d _ ^ g ` a ^ m a \ ^ b { ^ i i b g k _ x m _ y d _ a ` d ^ _ b d ^ _

d i \ h \ i m t

X Y Z V Y |

c \ l ^ i ^ j m _ a ^ m a \ { ^ i i _ \ h \ k c d h \ b c \ m ] ] m k b g _ ^ b v b m j d ] b g k \ ^ b l k \

f g ^ k \ a

X Y e V

d _ a b c \ k \ t m k \ k \ ` d ^ _ l ^ _ ^ b l m ] \ _ j ^ k j g ^ b l b d b \ d l l c m { _ ^ _

^ u

Y

Y Z Y |

c \

k \ l g i b

5

V 2 X Y Z V 5


EXAMPLE 2.14

EXAMPLE 2.15


Figure 2.36 Network for Ex-ample 2.15.

Figure 2.35 Determining Vofor the network of Fig. 2.34.


\ b \ k ` ^ _ \ b c \ j g k k \ _ b l d _ a t m k b c \ _ \ b { m k m t

^ u

Y

Y Z Y

|

c \ d ] ] i ^ \ a h m i b d u \ ] k \ l l g k \ ^ l l g j c d l b m b g k _ w m b c a ^ m a \ l m _ d l _ m b \ a w v b c \ k \

l g i b ^ _ u j g k k \ _ b a ^ k \ j b ^ m _ l ^ _ b c \ _ \ b { m k m t

^ u

Y

Y Z e Y

m b \ b c \ g l \ m t b c \ d w w k \ h ^ d b \ a

_ m b d b ^ m _ t m k x m _ y a ^ m a \ l d _ a b c d b b c \ l m i g b ^ m _ ^ l m w b d ^ _ \ a b c k m g u c d _ d ] ] i ^ j d b ^ m _ m t

b \ j c _ ^ f g \ l d ] ] i ^ \ a b m a j l \ k ^ \ l ] d k d i i \ i _ \ b { m k l

Y

5 }

} 5 }Z

X

Y Z

Y e

V

V} 5

z] ] i v ^ _ u [ ^ k j c c m t t l h m i b d u \ i d { d k m g _ a b c \ ^ _ a ^ j d b \ a i m m ] ^ _ b c \ j i m j { ^ l \ a ^ k \ j

b ^ m _ v ^ \ i a l

2

1

2

2

5 Xd _ a

5

2

2

5

X V 2 X Y e V 2 X Y e V 5 Y V

{ ^ b c

5 }

} 5 }

Y

Y

V

V

} 5

z

b b c \ w m b b m ` _ m a \ d

1

5

d _ a

5

2

5 Z Y Z `

z 2 X Y

`

z 5

2.6 AND/OR GATES

|

c \ b m m i l m t d _ d i v l ^ l d k \ _ m { d b m g k a ^ l ] m l d i d _ a b c \ m ] ] m k b g _ ^ b v b m ^ _ h \ l b ^ u d b \ d

j m ` ] g b \ k j m _ t ^ u g k d b ^ m _ ^ l m _ \ b c d b { ^ i i a \ ` m _ l b k d b \ b c \ k d _ u \ m t d ] ] i ^ j d b ^ m _ l m t b c ^ l

k \ i d b ^ h \ i v l ^ ` ] i \ a \ h ^ j \

Y

g k d _ d i v l ^ l { ^ i i w \ i ^ ` ^ b \ a b m a \ b \ k ` ^ _ ^ _ u b c \ h m i b d u \ i \ h

\ i l d _ a { ^ i i _ m b ^ _ j i g a \ d a \ b d ^ i \ a a ^ l j g l l ^ m _ m t

m m i \ d _ d i u \ w k d m k ] m l ^ b ^ h \ d _ a _ \ u

d b ^ h \ i m u ^ j

Y

|

c \ _ \ b { m k b m w \ d _ d i v \ a ^ _ ~ d ` ] i \

Y

^ l d _ u d b \ t m k ] m l ^ b ^ h \ i m u ^ j

Y

|

c d b ^ l b c \

X

V

i \ h \ i m t

^ u

Y

Y Z

^ l d l l ^ u _ \ a d x

y t m k

m m i \ d _ d i u \ w k d { c ^ i \ b c \

X

V

^ _ ] g b ^ l d l l ^ u _ \ a d x

X Y

y

z

_ u d b \ ^ l l g j c b c d b b c \ m g b ] g b h m i b d u \ i \ h \ i { ^ i i w \

d

^ t \ ^ b c \ k w m b c ^ _ ] g b l ^ l d

Y |

c \ m g b ] g b ^ l d

X

^ t w m b c ^ _ ] g b l d k \ d b b c \

X

i \ h \ i

Y

|

c \ d _ d i v l ^ l m t

z

u d b \ l ^ l ` d a \ ` \ d l g k d w i v \ d l ^ \ k w v g l ^ _ u b c \ d ] ] k m ~ ^

` d b \ \ f g ^ h d i \ _ b t m k d a ^ m a \ k d b c \ k b c d _ b c \ ^ a \ d i w \ j d g l \ { \ j d _ l b ^ ] g i d b \ b c d b b c \

h m i b d u \ d j k m l l b c \ a ^ m a \ ` g l b w \

X Y e V

] m l ^ b ^ h \ t m k b c \ l ^ i ^ j m _ a ^ m a \

X Y Z V

t m k \

b m l { ^ b j c b m b c \ x m _ y l b d b \

Y

} _ u \ _ \ k d i b c \ w \ l b d ] ] k m d j c ^ l l ^ ` ] i v b m \ l b d w i ^ l c d x u g b y t \ \ i ^ _ u t m k b c \ l b d b \ m t

b c \ a ^ m a \ l w v _ m b ^ _ u b c \ a ^ k \ j b ^ m _ d _ a b c \ x ] k \ l l g k \ y \ l b d w i ^ l c \ a w v b c \ d ] ] i ^ \ a ] m

b \ _ b ^ d i l

Y |

c \ d _ d i v l ^ l { ^ i i b c \ _ h \ k ^ t v m k _ \ u d b \ v m g k ^ _ ^ b ^ d i d l l g ` ] b ^ m _ l

Y

\ b \ k ` ^ _ \ t m k b c \ _ \ b { m k m t

^ u

Y

Y Z Y

^ k l b _ m b \ b c d b b c \ k \ ^ l m _ i v m _ \ d ] ] i ^ \ a ] m b \ _ b ^ d i

X V

d b b \ k ` ^ _ d i

Y |

\ k ` ^ _ d i { ^ b c

d

X

V

^ _ ] g b ^ l \ l l \ _ b ^ d i i v d b u k m g _ a ] m b \ _ b ^ d i d l l c m { _ ^ _ b c \ k \ a k d { _ _ \ b { m k m t

^ u

Y

Y Z Y

^ u g k \

Y Z

x l g u u \ l b l y b c d b ^ l ] k m w d w i v ^ _ b c \ x m _ y l b d b \ a g \ b m b c \ d ] ] i ^ \ a

X V

{ c ^ i \ { ^ b c ^ b l x ] m l ^ b ^ h \ y l ^ a \ d b

X V

^ l ] k m w d w i v x m t t

Y

y

z

l l g ` ^ _ u b c \ l \ l b d b \ l

{ ^ i i k \ l g i b ^ _ b c \ j m _ t ^ u g k d b ^ m _ m t

^ u

Y

Y X Y

|

c \ _ \ ~ b l b \ ] ^ l l ^ ` ] i v b m j c \ j b c d b b c \ k \ ^ l _ m j m _ b k d a ^ j b ^ m _ b m m g k d l l g ` ] b ^ m _ l

Y

|

c d b ^ l _ m b \ b c d b b c \ ] m i d k ^ b v d j k m l l ^ l l g j c d l b m b g k _ ^ b m _ d _ a b c \ ] m i d k ^ b v d j k m l l

^ l l g j c d l b m b g k _ ^ b m t t

Y

m k b c \ x m _ y l b d b \ \ l b d w i ^ l c \ l d b

5

2

5 X V 2 X Y e V 5

^ b c

Y Z V

d b b c \ j d b c m a \

2 l ^ a \ m t d _ a

X V

d b b c \ d _

m a \

1 l ^ a \ ^ l a \ t ^ _ ^ b \ i v ^ _ b c \ x m t t y l b d b \

Y |

c \ j g k k \ _ b a ^ k \ j b ^ m _ d _ a b c \ k \ l g i b

^ _ u j m _ b ^ _ g m g l ] d b c t m k j m _ a g j b ^ m _ t g k b c \ k j m _ t ^ k ` m g k d l l g ` ] b ^ m _ b c d b ^ l j m _

a g j b ^ _ u

Y

g k d l l g ` ] b ^ m _ l l \ \ ` j m _ t ^ k ` \ a w v b c \ k \ l g i b ^ _ u h m i b d u \ l d _ a j g k k \ _ b d _ a

m g k ^ _ ^ b ^ d i d _ d i v l ^ l j d _ w \ d l l g ` \ a b m w \ j m k k \ j b

Y |

c \ m g b ] g b h m i b d u \ i \ h \ i ^ l _ m b

X

V

d l a \ t ^ _ \ a t m k d _ ^ _ ] g b m t

w g b b c \

Y Z V

^ l l g t t ^ j ^ \ _ b i v i d k u \ b m w \ j m _ l ^ a \ k \ a d

i \ h \ i

Y |

c \ m g b ] g b ^ l b c \ k \ t m k \ d b d

i \ h \ i { ^ b c m _ i v m _ \ ^ _ ] g b { c ^ j c l g u u \ l b l b c d b

672.6 And/Or Gates

EXAMPLE 2.16

Figure 2.38 Positive logic ORgate.

Figure 2.39 Redrawn networkof Fig. 2.38.

b c \ u d b \ ^ l d _ u d b \

Y z

_ d _ d i v l ^ l m t b c \ l d ` \ _ \ b { m k { ^ b c b { m

X

V

^ _ ] g b l { ^ i i

k \ l g i b ^ _ w m b c a ^ m a \ l w \ ^ _ u ^ _ b c \ x m _ y l b d b \ d _ a d _ m g b ] g b m t

Y Z V Y z X

V

^ _ ] g b d b

w m b c ^ _ ] g b l { ^ i i _ m b ] k m h ^ a \ b c \

X Y e V

k \ f g ^ k \ a b m b g k _ b c \ a ^ m a \ l m _ d _ a b c \ m g b ] g b

{ ^ i i w \ d

X

a g \ b m b c \

X

V

m g b ] g b i \ h \ i

Y

m k b c \ _ \ b { m k m t

^ u

Y

Y X

b c \ j g k k \ _ b i \ h \ i

^ l a \ b \ k ` ^ _ \ a w v

5 }

2

} 5 } X V

2

V

X Y e V

} 5

\ b \ k ` ^ _ \ b c \ m g b ] g b i \ h \ i t m k b c \ ] m l ^ b ^ h \ i m u ^ j

z

u d b \ m t

^ u

Y

Y Y

m b \ ^ _ b c ^ l j d l \ b c d b d _ ^ _ a \ ] \ _ a \ _ b l m g k j \ d ] ] \ d k l ^ _ b c \ u k m g _ a \ a i \ u m t b c \ _ \ b

{ m k

Y

m k k \ d l m _ l l m m _ b m w \ j m ` \ m w h ^ m g l ^ b ^ l j c m l \ _ d b b c \ l d ` \ i \ h \ i d l b c \ ^ _ ] g b

i m u ^ j i \ h \ i

Y |

c \ _ \ b { m k ^ l k \ a k d { _ ^ _

^ u

Y

Y

{ ^ b c m g k ^ _ ^ b ^ d i d l l g ` ] b ^ m _ l k \ u d k a

^ _ u b c \ l b d b \ m t b c \ a ^ m a \ l

Y

^ b c

X V

d b b c \ j d b c m a \ l ^ a \ m t ^ b ^ l d l l g ` \ a b c d b

^ l ^ _ b c \ x m t t y l b d b \ \ h \ _ b c m g u c b c \ k \ ^ l d

X

V

l m g k j \ j m _ _ \ j b \ a b m b c \ d _ m a \ m t

b c k m g u c b c \ k \ l ^ l b m k

Y

m { \ h \ k k \ j d i i b c d b { \ ` \ _ b ^ m _ \ a ^ _ b c \ ^ _ b k m a g j b ^ m _ b m b c ^ l l \ j

b ^ m _ b c d b b c \ g l \ m t b c \ d ] ] k m ~ ^ ` d b \ ` m a \ i { ^ i i w \ d _ d ^ a b m b c \ d _ d i v l ^ l

Y

m k

{ c \ k \ { ^ i i b c \

X Y e V

j m ` \ t k m ` ^ t b c \ ^ _ ] g b d _ a l m g k j \ h m i b d u \ l d k \ d b b c \ l d ` \ i \ h \ i

d _ a j k \ d b ^ _ u m ] ] m l ^ _ u x ] k \ l l g k \ l y ^ l d l l g ` \ a b m w \ ^ _ b c \ x m _ y l b d b \ a g \ b m b c \

i m { h m i b d u \ d b b c \ j d b c m a \ l ^ a \ d _ a b c \ d h d ^ i d w ^ i ^ b v m t b c \

X

V

l m g k j \ b c k m g u c b c \

Vk \ l ^ l b m k

Y

m k b c \ _ \ b { m k m t

^ u

Y

Y

b c \ h m i b d u \ d b ^ l

X Y e V

a g \ b m b c \ t m k { d k a w ^ d l \ a

a ^ m a \

Y

^ b c

X Y e V

d b b c \ d _ m a \ m t d _ a

X V

d b b c \ j d b c m a \ ^ l a \ t ^ _ ^ b \ i v ^ _

b c \ x m t t y l b d b \

Y |

c \ j g k k \ _ b { ^ i i c d h \ b c \ a ^ k \ j b ^ m _ ^ _ a ^ j d b \ a ^ _

^ u

Y

Y

d _ a d ` d u

_ ^ b g a \ \ f g d i b m

5 }

2

} 5 } X V

2

V

X Y e V

} 5


EXAMPLE 2.17

Figure 2.41 Positive logic ANDgate.

Figure 2.42 Substituting the assumed states for the diodes ofFig. 2.41.

Figure 2.40 Assumed diodestates for Fig. 2.38.

|c \ l b d b \ m t b c \ a ^ m a \ l ^ l b c \ k \ t m k \ j m _ t ^ k ` \ a d _ a m g k \ d k i ^ \ k d _ d i v l ^ l { d l j m k

k \ j b

Y z

i b c m g u c _ m b

X V

d l \ d k i ^ \ k a \ t ^ _ \ a t m k b c \

X

i \ h \ i b c \ m g b ] g b h m i b d u \ ^ l l g t t ^

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X

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c \ k \ ` d ^ _ ^ _ u l b d b \ l m t b c \ a ^ m a \ l t m k b c \ ] m l l ^ w ^ i ^ b ^ \ l

m t b { m ^ _ ] g b l d _ a

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