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IEEE ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY EEDDSS

LECTRONEVICESOCIETY

APRIL 2005 Vol. 12, No. 2 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

Your Comments SolicitedYour comments are most welcome. Please writedirectly to the Editor-in-Chief of the Newsletter at

[email protected]

The 2005 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sen-sors, sponsored by the IEEE Electron Devices Society, will be held at the Karuiza-wa Prince Hotel West in Nagano Prefecture, Japan, June 9-11, 2005.

The purpose of this Workshop is to provide an opportunity for exchangingnew results in the area of Solid-State Image Sensors in an informal atmosphere.

The Technical Program will consist of invited and contributed papers, postersessions, and a discussion session. As in the previous workshops, emphasis willbe on high quality technical content. Ample time will be left for paper discussion.

Scope of WorkshopPapers on the following topics are solicited:Image Sensor Device Physics• New devices and structures. Advanced materials.• Improved models. Scaling. Image Sensor Design and Performance• CCD image sensors. CMOS image sensors. Active pixel sensors. New

architectures.• Small pixel. Large format. Low voltage and low power. Wide dynamic range.• High picture quality. Low noise. High sensitivity. High color reproducibility. • New modes of operation.• CAD for design and simulation of image sensors. Advanced Image Sensors• Application specific image sensors. High frame rate sensors. Low light level

imaging.• Intelligent sensors. Machine vision. • New functions.• Single chip camera.• Sensors with enhanced spectral response (UV, IR). • High energy photon and particle sensors (X-ray, Radiation).Fabrication• New fabrication techniques. Backside thinning. Color filters. Microlens.

Table of ContentsUpcoming Technical Meetings...................1

• 2005 CCD & AIS • 2005 VLSI• 2005 IITC

Report from the EDS Vice-President of Technical Activities ................................3Society News......................................................6• December 2004 AdCom Meeting Summary• EDS Archival Debuts DVD at the IEDM in S.F.• 2004 EDS Chapter of the Year Award• EDS Educational Activities Committee Report• Industry Relations: EDS Strategic Plan• In Memory of Al F. Tasch, Jr.• Message from the Newsletter Editor-in-Chief• 2004 EDS J.J. Ebers Award• 2005 EDS J.J. Ebers Award Call for Nominations• 2004 EDS Distinguished Service Award• 2006 IEEE Reynolds B. Johnson Data Storage

Device Technology Award• EDS Members Named Winners of the 2005 IEEE

Technical Field Awards• EDS Member Named Winner of the 2004 IEEE

Educational Activities Board Award• Congratulations to the EDS Members Recently

Elected to IEEE Senior Member Grade• EDS Members Elected to IEEE Grade of Fellow• EDS Distinguished Lecturers Participate in the 6th

WIMNACT-Taiwan• EDS Regions 4-6 Chapters Meeting Summary• 2005 EDS Graduate Student Fellowship Final Call

for Nominations

Regional and Chapter News .......................24EDS Meetings Calendar ...............................30EDS Distinguished Lecturers Participate

in the 5th WIMNACT-Hong Kong ........32

continued on page 5

Kar

uiza

wa,

Nag

ano,

Jap

an

2005 IEEE Workshop on Charge-Coupled Devices and Advanced

Image Sensors (CCD & AIS)

2005 IEEE Workshop on Charge-Coupled Devices and Advanced

Image Sensors (CCD & AIS)

2 IEEE Electron Devices Society Newsletter ❍ April 2005

President

Hiroshi IwaiTokyo Institute of TechnologyE-Mail: [email protected]

President-Elect

Ilesanmi AdesidaUniversity of IllinoisE-Mail: [email protected]

Treasurer

Juin J. LiouUniversity of Central FloridaE-Mail: [email protected]

Secretary

John K. LowellConsultantE-Mail: [email protected]

Jr. Past President

Steven J. HilleniusAgere SystemsE-Mail: [email protected]

Sr. Past President

Cary Y. YangSanta Clara UniversityE-Mail: [email protected]

Vice-President of Awards

Alfred U. Mac RaeMac Rae TechnologiesE-Mail: [email protected]

Vice-President of

Educational Activities

Paul K. L. YuUniversity of California at San DiegoE-Mail: [email protected]

Vice-President of Meetings

Kenneth F. GallowayVanderbilt UniversityE-Mail: [email protected]

Vice-President of Membership

James B. KuoNational Taiwan UniversityE-Mail: [email protected]

Vice-President of Publications

Renuka P. JindalUniversity of Louisiana at LafayetteE-Mail: [email protected]

Vice-President of Regions/Chapters

Cor L. ClaeysIMECE-Mail: [email protected]

Vice-President of

Technical Activities

Mark E. LawUniversity of FloridaE-Mail: [email protected]

IEEE Newsletters

Paul Doto, Paul DeSessoIEEE Operations CenterE-Mail: [email protected],[email protected]

Executive Director

William F. Van Der VortIEEE Operations CenterE-Mail: [email protected]

Business Coordinator

Joyce LombardiniIEEE Operations CenterEmail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included inthe Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Sendaddress changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.

Copyright © 2005 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed fordirect commercial advantage, and the title of the publication and its date appear on each photocopy.

EDS AdComElected Members-at-Large

Elected for a three-year term (maximum two terms) with ‘full’ voting privileges

2005 Term 2006 Term 2007 Term

C.L. Claeys (2) S.S. Chung (1) J. N. Burghartz (1)J.A. Dayton, Jr. (2) T. Hiramoto (2) M. Chan (1)M. Fukuma (2) L.M. Lunardi (2) M. Estrada del Cueto (2)F.J. Garcia-Sanchez (1) M. Lundstrom (1) S. Ikeda (1)K. Lee (2) A. Wang (1) N. D. Stojadinovic (2)J.J. Liou (1) H.S.P. Wong (2) J. J. Wesler (1)M. Ostling (2) X. Zhou (1) R. J. Welty (1)D.L. Pulfrey (2)

ELECTRON DEVICESSOCIETY

ELECTRON DEVICESSOCIETY

CONTRIBUTIONS WELCOMECONTRIBUTIONS WELCOME

Readers are encouraged to submit news items concerning the Societyand its members. Please send your ideas/articles directly to either the Edi-tor-in-Chief or appropriate Editor. The e-mail addresses of these individu-als are listed on this page. Whenever possible, e-mail is the preferredform of submission.

Newsletter DeadlinesIssue Due Date

January October 1stApril January 1stJuly April 1stOctober July 1st

REGIONS 1-6, 7 & 9

Eastern, Northeastern & South-

eastern USA (Regions 1, 2 & 3)

Ibrahim M. Abdel-MotalebNorthern Illinois UniversityE-Mail: [email protected]

Central USA & Canada

(Regions 4 & 7)

Jamal DeenMcMaster UniversityE-Mail: [email protected]

Southwestern & Western USA

(Regions 5 & 6)

Sunit TyagiIntelE-Mail: [email protected]

Latin America (Region 9)

Adelmo Ortiz-CondeUniversidad Simon BolivarE-Mail: [email protected]

REGION 8

Eastern Europe & The Former

Soviet Union

Alexander V. GridchinNovosibirsk State Technical UniversityE-mail: [email protected]

Scandinavia & Central Europe

Andrzej NapieralskiTechnical University of LodzE-Mail: [email protected]

UK, Middle East & Africa

Gady GolanThe Open UniversityE-Mail: [email protected]

Western Europe

Cora SalmUniversity of TwenteE-Mail: [email protected]

REGION 10

Australia, New Zealand & South

Asia

Xing ZhouNanyang Technological UniversityE-Mail: [email protected]

Northeast Asia

Hisayo Sasaki MomoseToshiba CorporationE-Mail:[email protected]

East Asia

Hei WongCity University of Hong KongE-Mail: [email protected]

Editor-In-Chief

Ninoslav D. StojadinovicUniversity of NisE-Mail: [email protected]

NEWSLETTEREDITORIAL STAFF

NEWSLETTEREDITORIAL STAFF

April 2005 ❍ IEEE Electron Devices Society Newsletter 3

The Electron Devices Society has set-uptechnical committees to help make surethe Society is serving the right techni-cal areas. The committees coordinatewith meetings and publications to helpinsure that the technical informationIEEE is rightly proud of remains on tar-get and covers all the areas the mem-bers of the EDS are interested in.

There are 14 technical committeesranging across a wide spectrum oftopics. They range from mainstreamsilicon technologies (VLSI Technologyand Circuits) to more exotic materials(Organic Electronics) and emergingareas (Nanotechnology). The namesof the committees and their chairs arelisted in the adjacent columns.

The primary reason that committeesexist is to make sure the EDS is respon-sive to new trends. The EDS, as anactive technical society, needs to makesure that the technical offerings of theSociety are in tune with emergingtrends. The Society needs to be nimbleenough to make sure it helps get meet-ings started or expanded to includenew topical areas.

Technical committees will begin toreview meetings on a regular basis.Technical committees will give adviceto the meetings committee chaired byDr. Ken Galloway. Over 140 confer-ences currently get either technical orfinancial sponsorship from the ElectronDevices Society. Most of the arrange-ments have not been reviewed sincethe initial application. We will nowreview meetings on a five-year cycle tomake sure they are offering value tosociety members.

Technical co-sponsorship of a meet-ing will require the meeting to meetseveral objectives. The meeting shouldserve a well-defined audience. It shouldbe unique either in time, technical con-tent, or geographically. We really donot want to sponsor meetings that arein competition with one another. Thisdoes not preclude regional meetings,serving a particular region is a goal weencourage for smaller workshops andconferences. Clearly, the technical con-tent of the conference should be rele-vant to the scope of electron devices.Members of the Society should receivea break on the registration fee.

Financial sponsorship or co-spon-sorship entails greater risk for the Soci-ety; and as a result, meetings shouldbe held to a higher standard. In addi-tion to the criteria for technical co-sponsorship, a financially supportedconference should have limited com-petition from other EDS meetings andshould have a flat or growing atten-dance. It should be financially success-ful. If the conference has a digest, itshould be included in the IEEE Confer-ence Publication Program (formerlycalled Book Broker Program).

There should be policies that ensureregular turnover in the technical com-mittee so that new people participate inthe meeting’s success. At the sametime, there should be a provision for a

mechanism to provide some long-termstability over the management of theconference. Many successful confer-ences have a changing technical com-mittee and a more stable steeringcommittee. The steering committee haslittle influence on paper selection, butcan advise on directions, logistics, andbudgeting.

Through these reviews, we hope tohelp conferences get better and toserve the technical community of theEDS better and more efficiently.

Mark E. LawEDS Vice-President of

Technical ActivitiesUniversity of FloridaGainesville, FL, USA

Compact Modeling Samar Saha, Silicon Storage Technology, Inc.

Device Reliability Physics Lu Kasprzak, Dade Behring, Inc.

Electronic Materials Judy Hoyt, MIT

Nanotechnology Philip Wong, Stanford University

Optoelectronic Devices Leda Lunardi, North Carolina State University

Organic Electronics Ananth Dodabalapur, University of Texas, Austin

Semiconductor Manufacturing Bob Doering, Texas Instruments, Inc.

Vacuum Devices Dan Goebel, NASA Jet Propulsion Lab

Compound SemiconductorDevices and Circuits

Supriyo Bandyopadhyay, Virginia Commonwealth University

Photovoltaic Devices Dennis Flood, NASA Glenn Research Center

Microelectromechanial Systems Jack Judy, University of California, Los Angeles

Power Devices and ICs Toshiaki Yachi, Tokyo University of Science

VLSI Technology and Circuits Bin Zhao, Skyworks Solutions

Technology Computer Aided Design Enrico Sangiorgi, University of Bologna

Attendees of the Technical Committee Chairs Meeting at the IEDM (left to right) Bin Zhao, Bob Doering, AlanSeabaugh, Mark Law, Leda Lunardi, Toshiaki Yachi, Jim Dayton and Ken Galloway

Report from the EDS Vice-President ofTechnical Activities

Report from the EDS Vice-President ofTechnical Activities


The eighth annual IITC (InternationalInterconnect Technology Conference),the premier conference dedicated toadvanced interconnect technology, willbe held June 6-8, 2005 at the San Fran-cisco Airport Hyatt Regency Hotel, con-veniently located 20 minutes fromSilicon Valley and downtown SanFrancisco.

The IITC was established with thesupport of the IEEE Electron DevicesSociety to provide an internationalforum to address interconnect issuesfrom both fundamental materials andsystem level viewpoints. The ever-increasing demands for more highlyintegrated circuit density and perfor-mance present enormous connectivitychallenges, and have focused attentionon the design, cost, performance andreliability demands on interconnects.New materials, architectures, communi-cation mechanisms and process tech-nologies are needed, and newapproaches are emerging in this rapidlyevolving area to meet these challenges.The IITC provides a unique forum forprofessionals in the semiconductorindustry and academia to present anddiscuss interconnect-related issues andnew technologies for the fabrication ofadvanced interconnects in monolithicICs, multi-chip modules (MCMs) andstate-of-the-art packages.

This conference provides severalvenues for learning and professionalinteraction. The popular short course,which addresses advanced interconnectprocess, design and reliability issues,will once again be offered on the daypreceding the conference (June 5), andparticipation is strongly encouraged bythose wishing to benefit from a combi-nation of tutorials on interconnect fun-damentals and briefings on the latestinterconnect technology advances.Without doubt, the cost and perfor-mance of ULSI circuits strongly dependon the capability and productivity ofinterconnect materials and processingequipment. In recognition of this criticalrole, supplier exhibits and seminars areincluded as an integral part of the IITC

technical program and will be held onthe first and second days of the confer-ence. These exhibits and seminars offeradditional learning and networkingopportunities, and provide alternativeforums to address specific technologicalchallenges.

Oral presentations and poster papersoffered during the conference span abroad range of interconnect technologytopics which include:Dielectrics: Dielectric materials(low k, high k, ARCs, etc.) and depo-sition processes (vapor deposition,CVD, spin-on, etc.) for interconnectapplications.CMP/Planarization: Dielectric/MetalCMP processes, equipment and metrol-ogy issues, and Alternate planarizationtechniques.Metallization: Metal depositionprocesses/equipment (PVD, CVD,ALD, electroplating) and materialscharacterization, with particularemphasis on advanced aluminumand copper metallization.Process Integration: Multilevel inter-connect processes, clustered processes,novel interconnect structures,contact/via integration, metal barrier andmaterials interface issues, etc.Process Control/Modeling: CMP, met-al/dielectric deposition and etchingprocesses, PVD, CVD, electroplating, etc.Reliability: Metal electro migration andstress voiding, dielectric integrity andmechanical stability, thermal effects,passivation issues, interconnect reliabili-ty prediction/modeling.

Interconnect Systems: Interconnectperformance modeling and high fre-quency characterization, interconnectsystem integration and advanced pack-aging concepts (flip-chip, chip-on-chip,MCM, etc.), novel architectures.System-on-a-Chip: Interconnect,design and processing of SOC, embed-ded memory processing, materials andintegration, RF and high frequencypassive components, noise and cross-talk issuesDry Processing: Dry etching of vias,trenches and damascene structures, dryetching of metal, dry cleaning processes,plasma induced damage, etc.Alternative Interconnects: Advancedinterconnect concepts, optical and RFinterconnect, superconductors, nan-otechnology-based interconnect, etc.

Given the rapid acceleration of inte-grated circuit technology, the last topicprovides an important forum for discus-sion of the interconnect crisis and poten-tial paradigm shifts to novelinterconnect schemes.

Professionals involved in intercon-nect-related activities are stronglyencouraged to participate in this excitingnew conference. Detailed informationcan be obtained from the IITC website:http://www.ieee.org/conference/iitc. Foradditional information or inquiriesregarding supplier exhibits and semi-nars, please contact Wendy Walker, IITCAdministrator at +1 301-527-0900 Ext.104, Fax: +1-301-527-0994, or email:[email protected].

Duane BoningGeneral Co-Chair

Massachusetts Institute of TechnologyCambridge, MA, USA

Shinichi OgawaGeneral Co-Chair

Matsushita Electric Ind. Co., LtdKyoto, Japan

Dirk GravesteijnGeneral Co-ChairPhilips Research,Leuven, Belgium

2005 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC)

Upcoming Technical MeetingsUpcoming Technical Meetings

2005 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC)


• Packaging. • Testing.• Reliability. Yield. Cost.• Defects. Leakage current. Radiation

damages.High quality papers addressing work

in progress are also welcome.The deadline for receipt of abstracts

was January 27, 2005. Authors will benotified of the acceptance of their sub-mission by March 25, 2005. Authors ofaccepted papers will be requested tosubmit by April 25, 2005 a full-lengthcamera-ready copy of their paper, notexceeding 4 pages (A4 size), for inclusionin the Workshop Program. Black/whiteprinting is planned. Depending on thefinal Workshop budget, color printingmight be possible.

Workshop LocationKaruizawa is a popular summer resortin Nagano Prefecture, 130km north-west of Tokyo. It takes one hour by theBullet Train from Tokyo. The work-shop hotel, adjoining the JR Karuiza-wa Station is just a couple of minutesdrive from the station. More informationon the Karuizawa Prince Hotel can be

found at: Japanese http://www.prince-hotels.co.jp/karuizawa/index.htmlEnglish http://www2.princehotels.co.jp/app_room/epiq0010.asp?hotel=034(written in English and Japanese.)

Organizing Committee• Nobukazu Teranishi (Matsushita,

Kyoto, Japan) Workshop Chairman• Junichi Nakamura (Micron Japan,

Tokyo, Japan) Technical ProgramChairman

• Eric R. Fossum (USC, Pasadena, CA,USA)

• Albert Theuwissen (Dalsa, Eindhoven,The Netherlands)

RegistrationThe participant should register beforethe Workshop, because the capacity ofthe Workshop is limited. The presen-ters for each paper can get a seat ofthe Workshop automatically. However,they also need to register. The princi-ple of “first come, first registered” willbe used, but if many register fromsame organization, some limitationwill be applied. The registration start-ed on February 1, 2005. The Final Call

for Papers will include the “registra-tion form”.

Workshop ProgramThe Workshop will start on Thursday,June 9, 2005, and will end on Saturday,June 11 at noon. Thursday and Fridaylunches, the Workshop Reception Dinnerand the Workshop Dinner are included inthe Workshop fee.

Details on the Workshop Programwill be sent out before May 1, 2005 tothose who have registered and beenadmitted to the Workshop and willalso be available at the WorkshopInternet site.

Pre-Workshop TourThe pre-workshop tour is being plannedfor June 8, 2005 in Tokyo area. We planto visit NHK Science and TechnologyResearch Laboratory. When details areready, an announcement will be sent tothe persons registered.

Nobukazu TeranishiWorkshop Chair

Matsushita Electric IndustrialKyoto, Japan

(continued from page 1)2005 CCD & AIS2005 CCD & AIS

The 2005 Symposia on VLSI Technologyand Circuits will be held at the RihgaRoyal Hotel Kyoto, Kyoto, Japan, June14-18, 2005. Professors Shoji Tanakaand Walter Kosonocky, founders of theSymposia, first organized the VLSI Tech-nology Symposium in 1981 with thehope of offering an opportunity for theworld’s top technologists to engage inan open exchange of ideas on what wasquickly becoming a revolution in theworld’s industrial capability. Since then,the Symposia has been held annuallyand has grown into an important andvaluable event for people working in theVLSI business. The presentation of high-quality papers has made it possible forattendees to learn about new directionsin the development of VLSI technology.The friendly atmosphere has made thisan enjoyable learning experience.

The Symposium on VLSI Technolo-gy has alternated each year betweensites in the US and Japan. In 1987, thefirst Symposium on VLSI Circuits washeld in conjunction with the TechnologySymposium in recognition of the grow-ing interest to provide the same small

but intense and open forum for dis-cussing circuit and system implementa-tions. Since then, this annual meetinghas increased its value over the past 18years. We are confident that so manynew technologies and circuits wereintroduced in the past Symposia andthus have contributed to the prosperityof the world. Its sponsors continue to bethe IEEE Electron Devices Society andSolid-State Circuits Society, and theJapan Society of Applied Physics incooperation with the Institute of Elec-tronics, Information and Communica-tion Engineers.

For many reasons, these meetingshave remained linked for the pastyears to provide opportunities fortechnology people and circuit and

system designers to interact with eachother. These interactions are aug-mented with short courses, invitedspeakers and several evening rumpsessions. In recognition of the effortsof organizers, authors and partici-pants to make the Symposia success-ful, there are ample banquets andentertainment prearranged.

The 2004 meeting was held in Honolu-lu, Hawaii. This year it will be returning toRihga Royal Hotel in Kyoto, an ancientcapital of Japan. Also the Symposium onVLSI Technology will celebrate its twenty-fifth anniversary in 2005.

Participation of all persons with aninterest in this field is welcomed. Seeyou in Kyoto in 2005! Please visit ourwebsite for more information athttp://www.vlsisymposium.org.

Kenji MaeguchiSymposium Chair

2005 Symposium on VLSI Technology

Tadashi NishimuraSymposium Chair

2005 Symposium on VLSI Circuits

2005 Symposia on VLSI Technology and Circuits (VLSI)

Kinkakuji Temple, Kyoto, Japan

2005 Symposia on VLSI Technology and Circuits (VLSI)


Society NewsSociety News

December 2004 AdCom Meeting Summary

The 2004 annualmeeting of the IEEEElectron DevicesSociety was calledto order by Presi-dent Hiroshi Iwai onSunday, December12 at the San Fran-cisco Hilton preced-ing the 2004 IEDMConference.

Executive ReportsRecognized outgoing members ofAdCom included elected AdCom mem-bers, Ken Galloway, Steve Hillenius andRaj Singh as well as Paul Yu (Treasurer),Ilesanmi Adesida (Education V-P.)Yoshio Nishi (Fellows Chair), JamesDayton (Vacuum TC Chair), AlanSeabaugh (Nanotechnology TC Chair),and A. Nathan (EDS Newsletter Editor).Also saluted for their contributions tothe EDS Archival Collection DVD projectwere Renuka Jindal, Phyllis Mahoney,Jeff Welser, Bill Van Der Vort, andStacey Waters. Following approvals ofthe Spring 2004 meeting minutes, andthe 2005 Ex-Officio member appoint-ments, Hiroshi’s opening address con-cerned the results of the 2004 IEEE TABmeetings. Approved by TAB was theIEEE Intelligent Transportation SystemCouncil’s proposal to become a Society,the creation of an Adhoc Committee toexplore the formation of an IEEE Com-puter Aided Design Council, a newIEEE/OSA Journal of Display Technolo-gy, and changes to the All Society Peri-odicals Package. The TAB PeriodicalsReview Committee report for EDL, T-EDand the EDS Newsletter received excel-lent feedback, with the very fast turn-around time for EDL and T-EDspecifically being commended. Alsoacknowledged was past EDS PresidentSteve Hillenius’ election to Division IDirector starting in 2006.

Reporting for the EDS ExecutiveOffice, Bill Van Der Vort, presented alengthy list of Adhoc projects complet-ed since the Spring AdCom meeting. Afew of the items included implementingthe change to the December 2004 elec-

tion requiring at least one AdCommember be a Graduate of the LastDecade (GOLD) member, running theselection and award granting of theRegion 9 Outstanding Student PaperAward, responding to the TAB draftreport prepared by the TAB PeriodicalsReview Committee for EDL, T-ED, andthe EDS Newsletter, participating in theIEEE pilot project for web-based shortcourses through a new system calledXELL (Xplore Enabled Learning Library),expansion of the Distinguished Lecturerprogram, determining a plan for theremaining stock of EDS videotapes,changing the Membership Fee SubsidyProgram currently named MFSP (for the2005 billing cycle), engaged a consul-tant to analyze and make recommenda-tions based on results from IEEECorporate on why members drop theirsociety memberships, worked with theIEDM for inclusion of ‘EDS MEMBER’and grade on the badges of all EDSmembers, collaborated with ESSDERCto have all prior years of ESSDERC Pro-ceedings (1997-2002) digitized andadded to Xplore, joined with the Meet-ings Committee to develop a proposalto establish a Conference DigitalLibrary, continued the changes to theEDS Newsletter giving the publication anew look, coordinated the digitizationand scanning of pre-1988 issues of T-ED, EDL, and IEDM, and helped producean ‘IEDM ONLY’ DVD, and a DVD toinclude all issues of EDL & T-ED and theIEDM Proceedings. In 2005, some of theupcoming Adhoc tasks for the ExecutiveOffice include: expansion of the Distin-guished Lecturer program, participatingin the XELL project, digitization of theESSDERC proceedings, implementing a

cost-savings program aimed at theSenior Member (SM) program whichincludes the cessation of granting chap-ters reimbursement for each new SMand using e-mail to encourage SMapplicants, and coordination with IEEEPublications Department to have allyears of EDL, T-ED, and IEDM availableto members via Xplore as part of theirmembership.

Officer & Vice-President ReportsIn the last two years, Treasurer Paul Yureports that EDS has rebounded well fol-lowing the assessments made by theIEEE on EDS. Paul reported that since nofurther reserve reductions have occurredthe reserve has grown to just under $4M[Note: All Financial information reportedin $US]. Nevertheless, overall netincome fell in 2004 due to a conferencedeficit of $80K back in 2002 which closedthis year, reduced income from IEDMdue to the support of the DVD project(incl. other conferences revenue short-fall), and less income from publications.This shortfall was off-set by the reduc-tion of the infrastructure charge leviedby IEEE. In other financial business, ratesfor 2006 publication subscriptions, pagecounts, and membership fees wereapproved. On the membership side,EDS had 11,455 members in 2004 slight-ly down from 12,297 in 2003. Of these,6,586 are regular members, 3,982 arepermanent members, 868 are students,and 19 remain affiliate members. Thedemographics can be seen in the follow-ing chart:

Membership V-P, James Kuo, reportsthat this year also saw an increase in thenumber of Senior Members to 1389, andFellows to 1668, and praised the ongo-

IEEE Region Count % of Total1-6 (United states) 6,556 57.2

7 (Canada) 207 1.8

8 (Europe, Middle East, & Africa) 2,075 18.1

9 (Lati n America) 156 1.4

10 (Asia Pacific) 2,461 21.5

Total 11,455 100

EDS Membership Demographics for 2004 (as of 10/04)

John K. Lowell

December 2004 AdCom Meeting Summary


ing efforts at recruitment such as confer-ence onsite credit vouchers, TIP mail-ings, promotional material for SeniorMembership, and DL promotion. Jamesalso reviewed the EDS strategy onrecruiting members in under-servedregions such as mainland China, pro-posed changes to the Partial Member-ship Fee Subsidy Program (PMFSP), anddiscussed the All Society Research Pro-ject (ASRP) on membership retention. Inthe ASRP review, James indicated thatraises in IEEE membership fees stronglyinfluence renewals, and that EDS needsto increase its membership developmentat the student level. He also explainedthat the PMFSP in its current form maynot meet the needs of some chapters inEastern Europe, China, and India sinceraising the matching fees is difficult. Jimproposed a motion to return the pro-gram to its original “full funding” mem-bership initiative which was passed byAdCom. In line with EDS globalization,Cor Claeys, Regions/Chapters V-P,announced that the total number ofchapters has reached 114 in 2004, withnew ones being added in India, Vancou-ver, North Carolina, Mexico, Brazil andthe Ukraine. Active dialogue is underwaywith the Peoples Republic of China, par-ticularly in Beijing and Shanghai toencourage a chapter growth policy thatis compatible with both local and gov-ernmental restrictions. AdCom alsoapproved that sub-chapters could beformed in areas qualifying for IEEE mini-mum income rates under the jurisdictionof an existing EDS chapter and requiringonly six signatures for formation, andhaving all financial assistance capped at$500. Cor also recognized the Singaporechapter named the winner of the 2004EDS “Chapter-of-the-Year” Award. In alater report by Mikael Ostling, AdComlearned that the total number of chaptersin Europe, Middle East, and Africareached 40 in 2004.

The Distinguished Lecturer (DL) pro-gram continues to appeal worldwide.Both the number of lecturers (134 in2004) and the number of lectures given(122) are well above their respective2003 levels according to Ilesanmi Adesi-da, Education V-P. Also in 2004, the EDSVideotape Lending Library was lessactive, while the EDS Graduate StudentFellowship Program had a very success-ful year. Suggested changes such asincreased financial remuneration andrecognition to the winners are being

considered for future discussions. TheShort Course program is being evaluat-ed while EDS is working with IEEE EABon the XELL intitiative. The address byRenuka Jindal, Publications V-P, dis-cussed the revitalization of T-DMR. Thepublication has been approved toreceive ASPP funds in 2005 and will becontinued for the near future. EDS sup-port for the Circuits & Devices Magazinewas also endorsed by a special sub-committee. A lively discussion ensuedwhen Renuka discussed the inadequatereferencing by authors of material thatis not available electronically. With theonset of electronic publishing, manycontributors to both EDL & T-ED are notsearching older, non-digitized papers ontheir subjects neglecting important ear-lier work. Needless to say, all editorswill enforce adequate referencing intheir reviews. Both EDL & T-ED contin-ued to be profitable in 2004 with T-EDbringing in $560K, and EDL around$224K. On the digitization front, all EDL& T-ED issues from 1954-August 2004,and IEDM from 1955-2004 have beenscanned, and are now available onDVD. In closing, the impact on publica-

tions on membership was debated anddiscussed. The TAB review clearlyshowed that members view publica-tions as an important factor in becom-ing an EDS member. Yet now whenmore material is available on the web toIEEE members, and conferences areopen to everyone , the value of being amember of EDS is less clear.

Meetings V-P Ken Galloway gotAdCom approval for all EDS repeatmeetings in 2006, and gave statisticson those for 2004. This past year EDSwas involved with 30 financially spon-sored meetings, 113 that were techni-cally co-sponsored, and none wereprovided cooperation support. Closingmeetings continues to be problematicwith EDS paying late fees chargedfrom 1999-2004 to the amount of$17,953.00 In related meeting news,IEDM Chair, Jeff Welser, expectedaround 1950 attendees at IEDM 2004.650 signed up for the short courses,and it appears that the meeting will beprofitable even with increased expens-es. The archival DVD of IEDM (1954-2004) will be distributed to allattendees. Award’s V-P, Al MacRae

Paul Yu, out-going 2004 EDS Treasurer, giving his last Treasurer’s Report at the 2004 AdCom Meeting

Award Recipient/AffiliationIEEE Jun-ichi Nishizawa Medal Jerry Woodall (Yale)

IEEE Frederi ck Philips Award Hiryoshi Komiya (Tokyo Semitsu)

IEEE Andrew S. Grove Award Tso -Ping Ma (Yale)

IEEE Cleo Brunetti Award William Oldham (UC -Berkeley)

EDS J.J. Ebers Jerry Fossum (Florida)

EDS Distinguished Service Award Lou Parrillo (Parrillo Consulting)

IEEE EAB Meritorious Achievement AwardIn Continuing Education

Cary Yang (Santa Clara University)

EDS Recipients of National, IEEE, and EDS Awards for 2004


presented a comprehensive list of EDSmembers recognized with major IEEE,and EDS awards in 2004, as summa-rized below:

Al exhorted the assembled AdComto be pro-active in nominating mem-bers for IEEE Awards in 2005. Also,Lou Parrillo announced Jerry Fossumfrom Florida as this year’s EbersAward selection. On the Fellows side,outgoing chair Yoshio Nishi, statedthat from 67 nominations received 22were promoted to Fellow grade, andan additional 18 were elected by othersocieties. Steve Hillenius will assumethe Fellows chairmanship in 2005.Technical Activities V-P, Mark Law, isworking on guidelines for sponsoredand technically co-sponsored meet-ings. The effort plans to align subjectareas, dates, audiences, and financialpractices among all meetings newand old. It is also part of a plan forgetting meetings on new and timelytopics organized more quickly andefficiently.

Additional ReportsDivision I Director, Lew Terman, wason hand to report on the state of theDivison. Highlights of his reportfocused on the key IEEE issues ofpublications, membership, confer-ences, and chapters. The Board ofDirectors plans to increase itsreserves by $26M or 41% of all year-ly IEEE expenses. They reported asurplus in 2004 of $6.7M throughmore conservative investments. TheIEEE is also seeking better links withindustry to increase membership,and is increasingly concerned aboutopen access to its publications espe-cially at universities to non-IEEEmembers. Steve Hillenius outlinedthe proposed CAD Council. The pro-posal will go to TAB in February andis largely concerned with ECADstarting at the circuit and systemslevel (i.e. TCAD is not included).Supported by other societies (AP,CAS, CS, and SSC) the Council willbe funded by the DAC conferenceand publications. AdCom approvedseed money of $10K for EDS to joinin supporting this idea. AdComwished to know where traditionalTCAD (process & device levels)would fit under this new plan but noplans to include these levels are cur-rently under discussion. A l ink

between this Council and the Com-pact Modeling TC was endorsed.Friedolf Smits addressed the AdComon the XELL program. XELL plans tooffer numerous courses a year mak-ing the latest in IEEE IP available toa wider audience. The EducationalActivities Board (EAB) is developinga “best-of-the-best” initial packageof 25-30 3-hour tutorials for distribu-tion in 2005. The plan is to takeadvantage of increasing corporate

budgets for web-based learningbecoming an important revenuestream for the Society by 2006.AdCom approved $20K for moduledevelopment costs, and to recom-mend one of its short courses forinclusion in the start-up package.

Publication ReportsEDL Editor-in-Chief, Yuan Taur,reported that the 249 papers pub-lished this year are significantlyhigher than last year’s number. EDLis maintaining its target turnaroundtime of four months, and its citationfactor has risen from 10 in 2003 to 13in 2002. EDS Newsletter Editor,Ninoslav Stojadinovic, reported thatthe IEEE TAB Periodicals had manynice things to say about the Newslet-ter in general. He also praised edi-tors for improving the amount ofregional & chapter news in 2004, andpersonalizing the AdCom throughmore photos and bios. Reporting on

T-ED, Editor-in-Chief, Doug Verret,reported a flat 45% acceptance rate.He is also working on guidelines forEIC succession, and adding an Editorfor “Molecular & Organic” subjectmatter. Doug also outlined a dilem-ma with subscribers demandingadded web links, search capability,and general content and caring lessabout the quality of the journal itself.Also at issue is the problem of multi-ple submissions between confer-ences and T-ED. Academics valuejournal papers more highly than con-ference papers in general, but howmuch difference in content is neces-sary to make the submissions inde-pendent?

The motions and their outcomesfor the AdCom meeting are listed atthe end of this page.

For 2005, EDS officers are: Presi-dent, Hiroshi Iwai; President-Elect, Ile-sanmi Adesida; Treasurer, Juin J.Liou; and Secretary, John Lowell.AdCom members elected for a secondterm are Magali Estrada Del Cuetoand Nino Stojadinovic. Newly electedAdCom members are: Joachim N.Burghartz (Delft Inst., Netherlands);Mansun Chan (Hong Kong Univ. ofSci. & Tech.); Shuji Ikeda (TrecentiTechnologies, Inc.); Jeffrey Welser(IBM Almaden Research Center); andGOLD Member, Rebecca Welty(LLNL).

The next meeting of EDS AdCom willbe on Sunday June 5, 2005 at the Con-ventions and Exhibit Center in Seoul,Korea in conjunction with the Transduc-ers - International Conference on Solid-State Sensors, Actuators, andMicrosystems.

John K. LowellEDS Secretary

Lowell ConsultingDallas, TX, USA

"Any (EDS) article, anywhere, anytime, and affordable."

- Renuka Jindal, Publications V-P- On the completion of the EDS

Archival Publications DVD

Motion OutcomeApproval of Minutes from Spring AdCom 2004 Passed

Approval of Ex-Officio Appointments for 2005 Passed

Approval of Publications Page Count & Member Fees for 2006 Passed

Approval of Formation Plan for Sub-Chapters Passed

Approval of Repeat Meetings List for 2006 Passed

Modify Current PMFSP Plan to Previous MFSP (with modifications) Passed

Pledge $20K to IEEE XELL Program Module Development Passed

Pledge $10K to Formation of IEEE CAD Council Passed

Summary of EDS AdCom Actions – December 2004


As announced in the article entitled‘EDS Announces its Archival Collec-tion on DVD (1954-2004) in the Janu-ary 2005 issue of the Newsletter, thearchival DVD was released for sale toEDS members at the IEDM in SanFrancisco. With 390 copies soldthrough advance registration, 300copies purchased on-site and another380 through the IEEE Customer Ser-vice Department, the initial responseto this product has been very positive.We had planned to order enoughcopies to go around for all interestedold and new EDS members. However,in view of the demand, we may beproved wrong. Hence, we suggest thatEDS members who are interested inpurchasing a copy of the DVD shouldvisit the IEEE Online Store at http://shop.ieee.org/store/ at the earliestopportunity. Individuals other thancurrent EDS members who wish topurchase this product are welcome tofirst join the IEEE and the ElectronDevices Society by visiting us athttp://www.ieee.org/eds/join

Please note that this DVD is a benefitprovided only to EDS members and assuch has been modestly priced at $30.Also, this DVD is meant for the individ-ual use of the purchasing EDS member.To uphold this concept of individual

ownership, all EDS members includingmembers of various EDS committees,editors and officers will need to pur-chase their own copy for their individ-ual use. We hope that this will alsoencourage other technical professionalsto become members of the IEEE Elec-tron Devices Society as well. For thoseEDS members who have alreadyacquired this product, we would like toemphasize that your adherence to thisconcept of individual ownership willhelp us in keeping the price low andcost-effective production of future edi-tions of this product. In other wordsshared usage is a violation of the agree-ment that is in place governing the pur-chase of this DVD. By honoring thisagreement you are helping us so wecan help you.

We hope you find this first-ever EDSArchival Collection DVD useful. Pleaselet me know how we can furtherenhance the value of this product. Usethe keywords “DVD feedback” as thesubject of your email

Renuka P. JindalEDS Vice-President of Publications

IEEE Electron Devices SocietyUniversity of Louisiana at Lafayette

Lafayette, LA [email protected]

Renuka P. Jindal, Vice-President of Publications, purchasing the EDS Archival Collection DVD at the IEDM

EDS Archival DVD Debuts at the IEDM

in San Francisco

EDS Archival DVD Debuts at the IEDM

in San Francisco

The EDS Chapter of the YearAward is presented annually to rec-ognize an EDS Chapter for the quali-ty and quantity of the activities andprograms implemented during theprior July-June period.

On December 13, 2004, at theIEDM held in San Francisco, CA, theCPMT/ED/R Singapore Chapterreceived the EDS Chapter of theYear Award, which included a cer-tificate and check for $1,000. Theaward was received by the ChapterChair, Kin Leong Pey, NanyangTechnical University.

The Chapter, formed in 1994, wasinvolved in the organization of flag-ship conferences; the IEEE Interna-tional Symposium on the Physicaland Failure Analysis of IntegratedCircuits (IPFA), in the field of failureanalysis and the Electronic Packag-ing Technology Conference (EPTC),related to electronic packaging, andalso organized the 3rd IEEE Mini-Colloquium on Nanometer CMOSTechnology (WIMNACT). Theseactivities are a strong drive towardsincreased membership. Specificfocus was given to stimulate partici-pation of student members and tofurther elaborate on the organiza-tion of joint activities with otherChapters in the region.

Cor L. ClaeysEDS Vice-President of

Regions/ChaptersIMEC

Leuven, Belgium

2004 EDS Chapter of the

Year Award

2004 EDS Chapter of the

Year Award


The objectives of the Educational Activi-ties Committee are to provide the forumand opportunities for members toexpand their knowledge of our technicalfields. The Committee also seeks to pro-vide opportunities for the Society toattract new members and to promote

membership and student activities. TheCommittee’s membership strength in2004 was seventeen, and its memberswere appointed by the President toreflect the worldwide geographicalspread of the Society. The Vice-Presidentfor Education who chaired the commit-tee was Ilesanmi Adesida of the Universi-ty of Illinois at Urbana-Champaign, USAand the other members were: K.S. Chari(Electronics Niketan, India); Jamal Deen(McMaster University, Canada); MagaliEstrada Del Cueto (CINVESTAV-IPN,Mexico); Yoshiaki Hagiwara (Sony Cor-poration, Japan); Agis Illiadis (Universityof Maryland, USA), Erin Jones (OregonState University, USA); Kevin T. Korne-gay (Cornell University, USA); Kei-MayLau (Hong Kong University of Science &Technology, Hong Kong); Kwyro Lee(KAIST, Korea); Juin Liou (University ofCentral Florida, USA); Stephen. A. Parke(Boise State University, USA); JayasimhaS. Prasad (Maxim Corporation, USA);Marcel D. Profirescu (Technical Universi-ty of Bucharest, Romania), Sunit Tyagi(Intel, USA); and Philip Wong (StanfordUniversity, USA) and Paul Yu (University

of California at San Diego, USA). Thecommittee physically met during theSummer AdCom meeting in Madrid,Spain and Fall AdCom meeting in SanFrancisco. Committee business was con-ducted mostly by electronic meansbetween the two meetings.

An important function of the Commit-tee is to maintain a vibrant DistinguishedLecturer (DL) Program for the Society.The DL Program exists for the purpose ofproviding EDS chapters with a list ofquality lecturers who can give talks atlocal chapter meetings and other occa-sions. Over the last few years, the DLprogram of our Society has beenrevamped and many lecturers appointedfrom all Regions of the world in order toprovide easy access to high quality tech-nical talks for EDS chapters. The Presi-dent of EDS, Hiroshi Iwai, wasinstrumental in proposing an expansionof the DL program. The listing of Distin-guished Lecturers along with their topicsand travel schedules is maintained onthe EDS homepage. The listing isreviewed yearly and to remain on theroster, a Distinguished Lecturer mustactively perform lectures. The year, 2004,ended with a roster of 134 lecturers.There were over 122 lectures conductedall over the world from Belarus to Brazilto Singapore to the United States by wellover half of our Distinguished Lecturers.To arrange for a lecture, EDS chapters

are encouraged to contact Lecturersdirectly. A general guideline for the visit,but not the absolute rule, is that the lec-turer should be able to include the meet-ing site with an already planned travelschedule at a small incremental cost tothe travel plan. Alternatively, a prior coin-cident travel plan would not be requiredif the lecturer is already located within anapproximate fifty mile radius of a meet-ing site. Although the concept of the pro-gram is to have the lecturers minimizetravel costs by combining their visitswith planned business trips, EDS willassist in subsidizing lecturers’ travel asneeded.

In addition to the individual lectures,there were five mini-colloquia conduct-ed last year. The mini-colloquia conceptgenerally involves sending about 2 ormore Distinguished Lecturers to travelto a region/chapter and present the lat-est developments in a particular field.The chapters/regions would be respon-sible for handling all the arrangementsof the event and only minimal financialsupport would be required of EDS andcould be covered by the DL Programbudget upon request. The five wereheld in Singapore, Spain, Serbia andMontenegro, Hong Kong, and Boise,Idaho, respectively. A mini-colloquiumon Nanometer CMOS Technology joint-ly organized by the Taipei (Taiwan) andTokyo (Japan) Chapters will be held onJanuary 21st and 22nd, 2005 in Taipei(http://www.edstaipei.edu.tw/). Othermini-colloquia are being planned,including one in Korea this June.Reports on the DL Program are present-ed frequently in this magazine. Formore information, please contact LauraRiello of the EDS Executive Office ([email protected]). Feedback is activelysolicited on the program from chapterchairs, lecturers, and members of theSociety.

The Graduate Student FellowshipsProgram (GSFP) was established fiveyears ago under the auspices of theCommittee. For 2004, the Chair of theGSFP sub-committee was StephenParke. There were four awards madelast year with the winners being pre-sented with their awards at the IEDM inSan Francisco. The winners were DavidDiSanto of Simon Fraser University,Canada; David John of the University of

EDS Educational Activities Committee Report

Illesanmi Adesida (third from left), EDS Vice-President of Educational Activites, with attendees of theEducational Activities Committee meeting at the IEDM (left to right) Yoshiaki Hagiwara, Jamal Deen, Ade

Illesanmi, Stephen Parke, Juin Liou and Paul Yu

EDS Educational Activities Committee Report


British Columbia, Canada; Martin vonHaartman of the Royal Institute of Tech-nology, Sweden; and Hongyu Yu of theNational University of Singapore, TheRepublic of Singapore. The winnerswere announced in the January issueof the EDS Newsletter. Advertisementfor the next competition with the quali-fications required and the renumera-tions are published in this Newsletterand other EDS publications. We areappealing to all our members to adver-tise the program among potential can-didates and nominators so thatstudents are aware of this opportunityfor funding and recognition. With theseawards, we hope to assist the very beststudents in our fields and also to makea positive impact on the future leadersof our Society.

The Committee established a ShortCourse Program. The Society envisagesthis program as a service to assist indus-try to keep their staff at the cutting-edgeof technology. A short list of hot topicswas developed by Philip Wong (andsome committee members) with the aid

of our Technical Committees along withcorresponding lecturers (by consent)from the Society. The courses and thelecturers were: Advanced CMOS (Y.Taur, M. Chan, J. Vasi, V. R. Rao, D.Schroder, and S. Cristoloveanu); High-KDielectrics (J. Lee), RF Devices and Cir-cuits (J. Cressler); and SiSiGe Het-erostructure Materials, Devices, andCircuits (H. Schumacher). A flyer onthese courses and lecturers was pre-pared and distributed to industry. Themode of operation of the program isthat interested parties would contact thelecturers directly and arrange to sponsorsuch short courses. Interested chapterscan co-sponsor short courses withindustry at their expense.

The Committee also worked with theIEEE Educational Activities Board (EAB)on the new Xplore-Based EducationalProducts Initiative that was launched in2003. This is a continuing education pro-gram which seeks to deliver short cours-es over the web. This is an experimentalprogram and EDS is one of the societiesthat is assisting in validating this pro-

gram. Two of our short course lecturers,Y. Taur and J. Cressler, are participatingin the Xplore-Enabled Learning LibraryProgram (XELL). Arlene Santos hasagreed to be the EDS Liaison to the EABfor the XELL program.

Lastly, the committee is continuouslyexploring ways and mechanisms ofinvolving student members in confer-ences and other activities of the Society.If you have any suggestions or informa-tion on these or any other activities thatyou may want us to engage in, pleasecontact the new Vice-President of Educa-tion for EDS (Paul Yu) at [email protected]. Iwish to express my sincere thanks to youall and the Executive Office for supportand cooperation over the last four yearsas I served as the Chair of this commit-tee. I am sure that the same support willbe extended to Paul Yu.

Ilesanmi AdesidaEDS Vice-President of Educational Activities

University of IllinoisUrbana-Champaign, IL, USA

The EDS Administra-tive Committee(AdCom) establisheda strategic plan withits primary objectiveto improve EDS ser-vice to its members.One aspect of thatplan was “IndustryRelations” with theoverall objective to:

• Increase EDS membership fromindustry by providing adequate cov-erage of industrial members’ contri-butions and activities in EDSpublications and meetings.We considered such questions as,

should the EDS improve its appeal tothe bench-top engineer by providingimproved opportunities for thesemembers to publish and give talks atmeetings and should the EDS pro-vide more practical material in itspublications?

We decided that we needed feedbackfrom EDS members on this subject. For-tunately, the IEEE completed a useful“All Society Research Project” survey in

April, 2004. This survey asked manyquestions of its Society members aboutthe quality of services that they receive.Fortunately, the EDS specific resultswere excellent and we need to thank theEDS staff and the members of theAdministrative Committees for theirexemplary leadership over many years.From the results of this survey, we sepa-rated out the responses of EDS mem-bers from industry. In summary, theirresponses were:• The EDS is already providing many

services to its members from indus-try, including Industry Short courses,web-based access to publications, anarchival DVD of publications, a Trans-actions concerning SemiconductorManufacturing, talks at numerousmeetings and specific manufacturingoriented meetings. It is important tocontinue and improve these industryoriented services.

There were also recommendations to:• Ensure continued industry employ-

ee access to EDS material, increaseweb coverage, increase use ofDVDs, improve marketing, do not

disassociate industry membersfrom their academic colleagues,increase regional meetings havingindustrial content, continue indus-try member participation on theEDS AdCom, improve opportuni-ties for industry employed mem-bers to participate on EDScommittees, be aggressive inexpanding into new technologiesand make industry member volun-teers feel appreciated.This feedback from the survey is

informative and the EDS AdCom willcontinue to consider the specific needsof its members who are employed inindustry. We want to make sure thatEDS serves your needs. This committeeis looking forward to more feedback andsuggestions from its members on thistopic. Please provide your input to me [email protected].

Alfred U. Mac RaeChair, EDS Industry

Relations CommitteeMac Rae Technologies

Berkeley Heights, NJ, USA

INDUSTRY RELATIONS: EDS Strategic PlanINDUSTRY RELATIONS: EDS Strategic Plan

Alfred U. Mac Rae


Dr. Al F. Tasch, Jr., truly a giant in ourindustry, passed away at Seton Med-ical Center in Austin, Texas onNovember 30, 2004. He was born onthe 12th of May, 1941, the son of Al F.and Dorothy Tasch. To many of uswho knew him well, Al was a devotedhusband, a loving father, a faithfulfriend, a staunchly devout man, agreat scientist and leader.

Al received his B.S. degree inphysics in 1963 from The University ofTexas at Austin, and his M.S. andPh.D. degrees in physics in 1965 and1969, respectively, from the Universityof Illinois, Urbana-Champaign. Histhesis research in impurities in siliconwas the pioneering work that led tothe widely known deep-level transientspectroscopy (DLTS) for characteriz-ing impurities in semiconductors thatis still used worldwide. In 1969, hejoined Texas Instruments, performingresearch that resulted in the firstdemonstration of an MIS structure inHgCdTe, and helped lay the founda-tion for infrared detector developmentand products throughout the 1970’sand 1980’s. He and his group did pio-neering work in Charge-Coupled-Device Memories, dynamic memory,silicon-on-insulator, and scaled MOStransistors. Today’s industry-standardMOS transistor structure with sidewalloxides and self-aligned, silicidedgates, sources and drains was patent-ed by Al and his colleagues. They pio-neered the Charge-Coupled DynamicRAM cell, the Hi-C Dynamic RAM cell,the grounded gate Dynamic RAM cell,and leakage current analyses ofdynamic memory structures. Hispatents on the Hi-C MOS dynamicRAM cell and the grounded gate MOSDynamic RAM cell have been used bymost Dynamic RAM manufacturers inthe industry. In 1978, Al was honoredas a TI fellow for his contributions incharge-coupled devices and MOSdynamic memory technology. He wasappointed Associate Director of theVLSI Laboratory in the CentralResearch Laboratories at Texas Instru-ments in 1980.

Al joined Motorola in July 1982,leading the start-up of Motorola’smost advanced MOS integrated circuitmanufacturing facility in Austin,

Texas. In January 1984, he was pro-moted to Director of the AdvancedProducts Research and DevelopmentLaboratory (APRDL), the R&D labora-tory with responsibility for the tech-nology development for Motorola’snew MOS memory, microprocessor,and logic products. A major endeavor

in this responsibility was the move ofAPRDL from Phoenix to Austin andthe start-up of a new R&D facility in1984-1985. During this period, Alrecruited me to Motorola to assist inthis enormously challenging and com-plex program. I was drawn to join himin his vision of changing the organiza-tion, the technology and the compa-ny. Al worked tirelessly to build thenew R&D organization in Austin whilekeeping the Phoenix operationsgoing. He had the highest expecta-tions, continually striving to improvethe ways in which we worked.Throughout this daunting project heexhibited the highest integrity and hedemanded the most of himself. Dur-ing the simultaneous operation of theLab in Arizona and Texas, he was on aplane for 39 of the 52 weeks in 1984,personally supporting both teams. Hewas appointed to Vice President of theTechnical Staff of Motorola in Febru-ary 1985.

Always being drawn to education,in July 1986 he joined the faculty ofthe Electrical and Computer Engineer-

ing Department at The University ofTexas at Austin, holding one of theCockrell Family Regents Chairs inEngineering. During 1987 he was incharge of the technical effort to suc-cessfully bring SEMATECH to Austin,TX. Al played the major role in build-ing the silicon-based education andresearch program at the University ofTexas at Austin to a level of nationaland international recognition. Heestablished the silicon device fabrica-tion laboratory in late 1987 with hisstudents and his academic funds. Thisfacility is used by most of the facultyand students in silicon-based materi-als, fabrication, and device research.He initiated a research program withhis students in MOS device modelingand analysis, which is recognizedworldwide. Since he began at UT, Alworked with the new faculty as amentor and collaborator to assistthem in developing their graduateeducation and research programs.

Al made many contributions toEDS. To name a few, he was a leaderin the IEDM, the Symposium on VLSITechnology and the SemiconductorInterface Specialists Conference. Heserved as SISC General Chair in 1979,IEDM General Chair in 1982, and VLSISymposium Chair in 1984. He wasAssociate Editor of the Transactionson Electron Devices between 1978and 1991, and a member of EDSADCOM from 1982 to 1988. His contri-butions to industry and academia arewell recognized with numerousawards. These include election to theNational Academy of Engineering, theIEEE Andrew S. Grove Award for out-standing contributions to solid-statedevices and technology, the J.J. EbersAward, IEEE fellow, Texas Instru-ments Fellow, the SRC TechnicalExcellence Award, the Billy andClaude Hocott Distinguished Centen-nial Engineering Research Award, TheUniversity Leadership Award from theSIA, the Electrochemical Society Elec-tronics Division Award, the Universityof Ilinois Alumni Award for Distin-guised Service and election as one ofthe Founding Members of the TexasAcademy of Medicine, Engineeringand Science in 2003. He held 38 USpatents.

In Memory of Al F. Tasch, Jr.In Memory of Al F. Tasch, Jr.


Al was a respected mentor tomany students, had a strong sense ofcommunity responsibility, and alwayshad a clear vision for the future. Hewas a brilliant yet practical man, and,up until the last, his focus was thewell being of his family. Al loved theoutdoors and enjoyed being a part ofthe community of the Texas HillCountry. He was a member of theStonewall Chamber of Commerce,Stonewall Heritage Society, and theFredericksburg Antique Tractor andEngine Club. He was also an activeparishioner both at St. Mary’s Cathe-dral in Austin and St. Francis Xavier

Catholic Church in Stonewall.Throughout his many pioneeringefforts, he was fortunate to have theunconditional love and support of hiswife and soulmate, Judie. At theirfarm in Stonewall, they were able tointegrate seamlessly into a very dif-ferent world than that of Al’s highlysophisticated and demanding profes-sional life. Many of their rural neight-bors honored Al at his funeral andhad no idea that he was a manregarded internationally with suchhigh professional respect. He wasviewed as a neighbor who alwaysgave of his own time and efforts to

help make things better for his friendsand his community.

Al is survived by his wife Judith,his son Edward and wife Anne, hisson David and wife Sara and theirchildren, Carsten and Kelsey. He isalso survived by his sister Mary JoSnider.

Professor Al F. Tasch, Jr. will besorely missed.

Respectfully,Louis C. Parrillo

EDS J.J. Ebers Award ChairParrillo Consulting, LLC

Austin, TX, USA

I am writing this message after alapse of almost a year. It is some-times astonishing to see how quick-ly the year has gone by. Asprofessionals, all of us are verybusy in our work. I hope that thisissue comes at a very prosperoustime in your career.

I would like to take this opportu-nity to thank two outgoing RegionalEditors for outstanding service tothe Newsletter and Electron Devicescommunity. They are MurtyPolavarapu (Regions 1, 2 & 3) andArokia Nathan (Regions 4 & 7) .Their outstanding voluntary contri-butions for many years are exem-plary to the rest of us. Replacingthem on the Newsletter EditorialStaff are Ibrahim Abdel-Motaleband M. Jamal Deen, respectively,whose biographies follow. Ibrahimand Jamal have a lot of EDS relatedactivities, and it is my pleasure towelcome them as the new Newslet-ter Editors for Eastern, Northeastern& Southeastern USA and CentralUSA & Canada, respectively.

Once again, I thank both outgo-ing editors for their dedicated ser-vice to the Newsletter and welcomethe new editors and wish them allsuccess. Please contact your respec-tive Regional Editor directly withnews items.Dr. Ibrahim Abdel -Motalebreceived B.Sc in both Electr icalEngineering and Physics at theCairo University, Egypt. He received

M.Sc degree inPhysics from theUniversity of Mani-toba, Canada in1982, and Ph.D.degree in ElectricalEngineering at theUniversity of BritishColumbia, Canadain 1986. He is a pro-fessor of ElectricalEngineering at

Northern Illinois University. He is aregistered Professional Engineer(PE) in the state of Illinois. His areasof research include: growth of elec-tronic materials using MOCVD andPLD; modeling of microelectronicand nano-electronic devices; andfabrication and modeling of nano-scale sensors.

Dr. M. Jamal Deencompleted a B.Sc.degree in Physicsand Mathematics atthe University ofGuyana (1978), aM.S. degree (1982)and a Ph.D. degree(1985) in ElectricalEngineer ing andApplied Physics at

the Case Western Reserve Universi-ty, Cleveland, Ohio. He is Professorof Electrical and Computer Engi-neer ing and Senior CanadaResearch Chair, McMaster Univer-sity, Hamilton, Ontario. His currentresearch interests include physics,

modeling, reliability and parameterextract ion of semiconductordevices; opt ica l detectors andreceivers; polymer and organicsemiconductor devices; and low-power, low-noise, high-frequencycircuits. Dr. Deen’s research recordinclude 15 invited book chapters, 6awarded patents, more that 300peer-reviewed articles and 60 invit-ed/keynote/plenary conference pre-sentations.

Dr. Deen was a Fulbright-LaspauScholar from 1980 to 1982, anAmerican Vacuum Society Scholarfrom 1983 to 1984, and an NSERCSenior Industrial Fellow in 1993. Heis a Distinguished Lecturer of theIEEE Electron Device Society; wasawarded the 2002 Thomas D. Calli-nan Award from the Electrochemi-cal Society; and the DistinguishedResearcher Award, Province ofOntario in July 2001. Dr. Deen iscurrently an Editor of IEEE Transac-tions on Electron Devices; ExecutiveEditor of Fluctuations and NoiseLetters; and Member of the EditorialBoard of Interface, an Electrochemi-cal Society publication. He is a Fel-low of IEEE, Fel low of EIC(Engineering Institute of Canada)and a Fellow of ECS (Electrochemi-cal Society).

Ninoslav D. StojadinovicEDS Newsletter Editor-in-Chief

University of NisSerbia and Montenegro

Message from the Newsletter Editor-in-Chief

Ibrahim Abdel-Motaleb

M. Jamal Deen

Message from the Newsletter Editor-in-Chief


The 2004 J.J. EbersAward, the presti-gious ElectronDevices Societyaward for outstand-ing technical contri-butions to electrondevices, was pre-sented to Dr. JerryG. Fossum of theUniversity of Flori-

da. He was presented with theaward at the International ElectronDevices Meeting in San Francisco,CA on 13 December 2004. Thisaward recognizes Dr. Fossum “Foroutstanding contributions to theadvancement of SOI CMOS devicesand circuits through modeling.“

Jerry Fossum was born inPhoenix, Arizona. He received hisB.S., M.S., and Ph.D. degrees in elec-trical engineering, the latter with aminor in physics, from the Universityof Arizona, Tucson, in 1966, 1969,and 1971. In 1971, he joined the tech-nical staff of Sandia Laboratories,Albuquerque, New Mexico, where hedid silicon-based device modelingand design in support of develop-ments of radiation-hardened CMOStechnologies and photovoltaic energysystems. In 1978, he moved to theUniversity of Florida, Gainesville, asan Associate Professor, and in 1980was promoted to Professor of Electri-cal Engineering. In 2002, he wasselected to be a University of FloridaResearch Foundation Professor.

Interestingly, Dr. Fossum’s workon photovoltaics (for which he waselected a Fellow of the IEEE in 1983),culminated in polysilicon solar cellswith efficiencies limited by grain-boundary effects. This work led to hisinvolvement with SOI, which initiallywas actually large-grain poly onSiO2. His SOI research began in1982, and it continues today. His pio-neering work on the front-gate-back-gate (substrate) charge-couplingeffects in thin Si-film MOSFETs trig-gered his continual contributions tothe advancement of viable SOI CMOStechnologies. The contributionsinclude physical device insights,process/physics-based compact mod-els, and Ph.D. students who entered

the SOI industry, all of which helpedmake SOI CMOS mainstream. Hisresearch yielded the first ever com-pact models (in SOISPICE) for partial-ly depleted (PD) and fully depleted(FD) SOI MOSFETs, and, with theirstrong process/physics basis, he hasevolved them (in UFSOI and UFPDB)as effective aids used by companiesand universities throughout theworld for device/technology designas well as circuit design, and forteaching SOI principles. Their utilitystems from their physical account-ings for the unique and complex fea-tures of SOI MOSFETs, e.g., thenoted charge coupling in FD devices,which renders a threshold voltage(Vt) dependence on the back-gatebias, f loating-body effects in PDdevices, including transient hystere-sis related to dynamic Vt, and theparasitic BJT and its influence onpass-gate transients. In fact, the lattertwo effects were actually predictedby Dr. Fossum’s models before theywere experimentally discerned.

Recently, Dr. Fossum began study-ing the performance potential of non-classical double-gate (DG) andtriple-gate CMOS on SOI. Building onhis previous SOI work, much ofwhich is applicable to multi-gatedevices, he is currently developing aprocess/physics-based compact mod-el (UFDG) for the generic DG MOS-FET with ultra-thin Si body (UTB),which is unified for application to thesingle-gate FD/SOI UTB MOSFET aswell. With good accounting for thecarrier-energy quantization in theUTB, UFDG is, in essence, a compactPoisson-Schrödinger solver in a cir-cuit simulator that has alreadyproven useful in projecting andbenchmarking performances offuture nanoscale nonclassical CMOSdevices and circuits, as well as in giv-ing good design insights.

Dr. Fossum is the author or coau-thor of approximately 250 paperspublished in international technicaljournals and conference proceedings,about half of which concern SOI. Hehas (closely) directed the research of30 Ph.D. students, 17 of whichworked on SOI. He has been associat-ed with the IEEE International SOI

Conference for 20 years, serving onits Executive Committee from 1994 to1997 and winning a best-paper awardin 1992. He was Guest Editor for theMay 1998 Special Issue on SOI Inte-grated Circuits and Devices of theIEEE Transactions on ElectronDevices.

Jerry lives with his wife Mary inGainesvil le. They follow major-league baseball (especially when

Jerry’s nephew is pitching), theywork out together regularly, and theyplan to play more golf together(when Mary improves her game abit). Coincidentally, Jerry’s daughterKelly is married to an SOI circuitdesigner at IBM. (This is one SOIeffect that he did not predict).

Louis C. ParrilloChair, J.J. Ebers AwardParrillo Consulting, LLC

Austin, TX, USA

Jerry G. Fossum

2004 EDS J.J. Ebers Award

2005 EDS J.J. EBERS

AWARD CALL FOR

NOMINATIONS

The IEEE Electron Devices Societyinvites the submission of nomina-tions for the 2005 J.J. EbersAward. This award is presentedannually for outstanding technicalcontributions to electron devices.The recipient(s) is awarded a cer-tificate and a check for $5,000,presented in December at theInternational Electron DevicesMeeting (IEDM).

Nomination forms can berequested from the EDS ExecutiveOffice (see contact information onpage 2) or is available on the webat www.ieee.org/eds/. The dead-line for submission of nomina-tions for the 2005 award is 1 July.

2005 EDS J.J. EBERS

AWARD CALL FOR

NOMINATIONS


2004 EDS Distinguished Service AwardThe IEEE ElectronDevices Society isextremely proud ofthe services that itprovides to its mem-bers. Its membersgenerate the premiernew developments inthe field of electrondevices and sharethese results with

their peers and the world at large bypublishing their papers in EDS journalsand presenting results in its meetings.This is a global activity that is effectivebecause of the efforts of numerous vol-unteers. Many of these volunteers laborin relative obscurity, with their onlyreward being the satisfaction that theyreceive in being an important part of asuccessful organization, namely of theElectron Devices Society. They shouldbe thanked.

The 2004 EDS Distinguished ServiceAward was presented to Louis C. Parrilloat the International Electron DevicesMeeting in San Francisco, CA on 13December 2004.

Louis Parrillo was born in Waterbury,Connecticut . He received his BSEE fromthe University of Connecticut and hisMSEE, MA and Ph.D. degrees in Electri-cal Engineering from Princeton Universi-ty. In 1972, he joined AT&T BellLaboratories in Murray Hill, New Jersey.There, he and his colleagues developedand transferred to manufacturing one ofthe worlds leading all-implanted, high-speed bipolar technologies. Included inthis work was the methodology of diag-nosing and solving key fabricationissues. Such techniques were widelyadopted in the industry. With Dr. RichardPayne and their colleagues, he devel-oped the original “Twin-Tub CMOS”

technology and successfully transferredit to manufacturing. It became an indus-try-standard approach for more thantwo decades. Prior to leaving AT&T, hesupervised groups in New Jersey andPennsylvania that were charged withdeveloping AT&T’s most advanced ICtechnologies.

He joined Motorola in 1984 as a staffmanager of the Advanced ProductsResearch and Development Laboratory(APRDL) in Austin, Texas. In 1988 hebecame the Director of APRDL. He builtand led the internationally recognized,600-person team through 1997. In thisrole, he drove the vision of a modern200mm-wafer development facility, andin partnership with manufacturing, cre-ated Motorola’s research, developmentand manufacturing complex that isknown today as the Dan Noble Center.He was appointed a Vice President in1988 and was elected a Corporate VicePresident in 1994. In 1998, he wasnamed General Manager of the Enter-prise Computing Systems Division, aP&L with design, test, product engineer-ing, marketing and sales teams. In thisrole he led the development and sales ofa family of ultra-fast SRAM products thatwere the fastest, most compact and thefirst in the industry to be manufacturedin the then revolutionary copper-inter-connect technology. In 2001, he waspromoted to Chief Technology Officer ofthe Semiconductor Products Sector(SPS) and director of the DigitalDNA(Laboratories, SPS’ global research anddevelopment organization. As CTO, heand his colleagues drove the formationof the alliance among Motorola, STMicroelectronics, Philips Semiconductorand TSMC for the research, develop-ment and transfer-to-manufacturing ofadvanced 300 mm wafer technology in

Crolles, France.He retired from Motorola in June

2003. In 2004, he established ParrilloConsulting, LLC, a business aimed atproviding value to varied clients basedon his more than thirty years of experi-ence in technical, managerial and busi-ness leadership.

He has 27 patents and more than 40publications. In 1989, he became an IEEEFellow. In 1992, he and Dr. RichardPayne were awarded the J.J. EbersAward for their “contributions to CMOSand bipolar IC technology”. In 1995, hewas elected President of the ElectronDevices Society and he served the 1996and 1997 terms of office. In 1996, he waselected to the United States NationalAcademy of Engineering.

He resides in Austin, Texas with hiswife Kathleen, a former teacher with aMaster’s in Education. Their son Jeffrey,a graduate of Georgetown University’sMcDonough School of Business, is fol-lowing his real passion and is pursuing aMasters of Fine Arts in acting at TheActor’s Studio Drama School in the NewSchool University in New York. Theirdaughter Lisa has traveled extensivelyhaving spent four summers studyingabroad in Spain and two summersstudying abroad in Italy. Lisa is pursuinga degree in International Advertising atthe University of Texas. In their sparetime Kathleen and Lou enjoy their placein Telluride as well as frequent travelingin the U.S. and abroad. Lou and Jeffreyhave become addicted to track drivingby participating in the Porsche ClubHigh-Speed Drivers Education events.

Michael S. AdlerChair, EDS Distinguished

Service AwardWilson, WY, USA

Louis C. Parrillo

2004 EDS Distinguished Service Award

CALL FOR NOMINATIONSThe IEEE Reynold B. Johnson Data Storage Device Technology Award is presented for outstanding contributions to theadvancement of information storage with emphasis on technical contributions in computer data storage device technology.

The award may be presented to an individual, team, or multiple recipients up to three in number. The recipient of theaward receives a bronze medal, certificate, and cash honorarium. The nomination deadline is 1 July 2005.

For nomination forms, visit the IEEE Awards Web Site, www.ieee.org/portal/pages/about/awards/sums/johnsondsdt.html,or contact IEEE Awards Activities, 445 Hoes Lane, Piscataway, NJ, USA, 08855-1331; tel: +1 732 562 3844; email:[email protected].

2006 IEEE Reynold B. Johnson Data Storage Device Technology Award

2006 IEEE Reynold B. Johnson Data Storage Device Technology Award


EDS MEMBERS NAMED WINNERS OF THE2005 IEEE TECHNICAL FIELD AWARDS

Five EDS Members were among thewinners of the 2005 IEEE TechnicalField Awards. They are:

Leon Chua of Uni-versity of Califor-nia, Berkeley wonthe 2005 IEEE Gus-tav Robert KirchoffAward. His citationstates, “For semi-nal contr ibutionsto the foundation

of nonlinear circuit theory, and forinventing Chua’s Circuit and Cellu-lar Neural Networks, each spawn-ing a new research area.”

A professor of electrical engi-neering and computer science atthe Univers i ty of Cal i fornia atBerkeley, Dr. Leon O. Chua is wide-ly recognized as the father of non-linear circuit theory and of cellularneural networks (CNN), which pro-vides a new architectural frame-work for nanoscale electronics, aswell as for bio-inspired electronicand photonic systems.

The CNN universal machinearchitecture is the only one imple-mented into a practical, fully-pro-grammable chip capable of solvingultra-high-speed pattern recogni-tion and image-processing prob-lems. The chip has outperformedconventional supercomputers andis being tested for next-generationanti-missile defense systems andas a critical component in detectinginstability in a state-of-the-art ther-monuclear experimental reactor.

Dr. Chua also invented a five-e lement c i rcui t for generat ingchaotic signals. Aptly named theChua Circuit, it is used by manyresearchers to design secure com-municat ions systems based onchaos.

An IEEE Fel low, he is a pastpresident of the IEEE Circuits andSystems Society and former editorof the IEEE Transactions of Circuitsand Systems. He is editor of theInternational Journal of Bifurcationand Chaos and a book series onnonlinear science.

He has received several IEEEawards including the IEEE NeuralNetworks Pioneer Award, an IEEEThird Millennium Award, the Gold-en Jubilee Medal and the TechnicalAchievement Award of the IEEECircuits and Systems Society, theIEEE W.R.G. Baker Pr ize PaperAward and the IEEE Browder J.Thompson Memorial Prize PaperAward.

He has been recognized by theInstitute of Scientific Informationas one of the 15 most-cited authorsin all fields of engineering during1991-2001. He is also an electedforeign member of the EuropeanAcademy of Sciences.

He has a master’s degree fromthe Massachuset ts Inst i tute ofTechnology in Cambridge, a doc-toral degree from the University ofIllinois, at Urbana-Champaign andnine honorary doctorates f rommajor universities in Europe andJapan.

Hiroyoshi Komiyaof Tokyo SeimitsuCo., LTD, won the2005 IEEE FrederikPhilips Award. Hiscitation states, “Forleadership in R&Dand driving interna-tional cooperation

leading to the next generation ofsilicon wafers.”

A long-time pioneer in the fieldof semiconductor research anddevelopment, Dr. Hiroyoshi Komiyaplayed a critical role in building thebasic technology of the semicon-ductor industry worldwide.

He has been an internationalleader in developing ultra-large-scale integration (ULSI) technologyand its standards, including 300mmwafer technology, ArF and EB litho-graphy.

As both chairman of the AsiaTask Force of the Sil icon WaferSummit and executive vice presi-dent and chief operating officer ofSemiconductor Leading Edge Tech-nologies, Inc. in Tsukuba, Japan,

Dr. Komiya drove the decision of300mm as the standard size fornext-generation wafers and theglobal transition strategy.

Earlier in his career, as generalmanager of ULSI Laboratories atMitsubishi Electric Corporation inJapan, he managed research anddevelopment programs for ULSItechnology in memories, micro-processors, DSPs, and other areas.He also led a Mitsubishi project todevelop and operate the world’sfirst, fully automated semiconduc-tor plant.

Dr. Komiya also led cooperativeactivities in Japan for device andcircuit technologies for the next-generation, system-on-a-chip LSIs,which are expected to contribute tothe progress of semiconductortechnology in the sub-100nm range.

An IEEE Fellow, he has served aschairman of the IEEE ElectronDevices Society Chapter of theTokyo Section and on the executivecommittee of the IEEE Tokyo Sec-tion. He was also a member of theexecutive committee of the JapanSociety of Applied Physics.

He has bachelor’s and doctoraldegrees from Kyushu University inFukuoka, Japan.

Tso-Ping Ma ofYale Univers i tywon the 2005 IEEEAndrew S. GroveAward. His citationstates, “For contri-but ions to thedevelopment andunderstanding of

CMOS gate dielectrics.”Dr. Tso-Ping (T.P.) Ma’s pioneer-

ing work in gate d ie lectr icsincreased integrated circuit operat-ing speed and reliability, loweredcost per function, and raised densi-ty by a s igni f icant factor . Gatedielectrics are a critical element inmetal oxide semiconductor (MOS)devices, the bui ld ing blocks oftoday’s silicon chips.

Dr. Ma, the Raymond John WeanProfessor of Electrical Engineering

EDS MEMBERS NAMED WINNERS OF THE2005 IEEE TECHNICAL FIELD AWARDS


and chair of the Electrical Engineer-ing Department at Yale Universityin New Haven, Connecticut, recog-nized early the importance of gatetunneling current in MOS behavior.The semiconductor industry nowrecognizes this as a major issue inscaling future MOS technology.

While at Yale and as a staff engi-neer at the IBM Systems ProductsDivision in East Fishkill, New York,Dr. Ma made significant contribu-tions to the effect of stress-strain atthe Si02/Si interface on defect gen-eration and carrier mobility varia-tion. His work was used by IBM andother semiconductor companies toincrease CMOS transistor perfor-mance and reliability in silicon inte-grated circuits.

He is co-author wi th Paul V.Dressendorfer of “Ionizing Radia-tion Effects in MOS Devices andCircuits.” This has been hailed bycolleagues as the most authorita-tive and comprehensive work onthe subject.

A Fellow of the IEEE, Dr. Ma hasreceived the IEEE Electron DevicesSociety’s Paul Rappaport Awardand was general chairman of theIEEE Semiconductor Interface Spe-cialists Conference and the Interna-t ional Symposium on VLSITechnology, Systems and Applica-tions. He also is a member of theU.S. National Academy of Engineer-ing (NAE) and a recipient of YaleUniversity’s Harding Bliss Prize.

He received his bachelor ’sdegree in science from the NationalTaiwan University in Taipei, Tai-wan, and master’s and doctoraldegrees in engineering and appliedscience, both from Yale University.

William G. Oldhamof University of Cal-i fornia, Berkeleywon the 2005 IEEECledo Brunett iAward. His citationstates, “For pio-neering contr ibu-tions to lithographic

engineering and to high-density iso-lation technology”

During his 40-year tenure as aprofessor in the Electrical Engineer-ing and Computer Science Depart-ment at the University of Californiaat Berkeley, Dr. Will iam Oldham

became a recognized leader in thefield of integrated circuit (IC) minia-turization technology. His researchhas allowed IC manufacturers tofabricate ever faster and more com-plex microchips at a lower cost.

In his isolation work, he analyzedthe limitations of various approach-es to shr inking the distancebetween electronic elements anddevised new ways to place transis-tors closer and save space. He wasamong the first to promote simula-tion as a process tool and pioneeredthe definition and development ofpractical simulators for micropat-terning, including deposition, etch-ing and lithography.

His p ioneer ing invent ion ofsealed-interface local oxidation sig-nificantly reduced the formation ofbird’s beak in the local oxidationprocess. This technology was wide-ly accepted by industry as a way toimprove device performance. Hisrecent work on maskless lithogra-phy promises to open opportunitiesfor improvements in chip develop-ment and the customized manufac-ture of specialized chips in limitedquantities.

Dr. Oldham was Robert S. Pep-per Distinguished Professor of Elec-trical Engineering at the universityuntil June of 2003, when he becameProfessor Emeritus.. An IEEE Fel-low, he has served the IEEE on theIEEE Electron Devices SocietyAdministrative Committee. His hon-ors include elect ion to the U.S.National Academy of Engineering,as wel l as the SemiconductorResearch Corporation’s TechnicalExcellence Award.

Dr. Oldham received his bache-lor’s, master’s and doctoral degreesin e lectr ica l engineer ing f romCarnegie Mellon University in Pitts-burgh, Pennsylvania.

Bruce A. Wooleyof Stanford Univer-sity won the 2005IEEE Sol id-StateCircuits Award. Hiscitation states, “Forpioneering contri-butions to integrat-ed electronics for

analog-to-digital data conversion incommunications systems”

Dr. Bruce A. Wooley, chairman of

the Department of Electrical Engi-neering at Stanford University inStanford, California, is a pioneer inthe field of integrated voice bandcoder-decoder (codec) c i rcui ts .While at Bell Labs in Holmdel, NewJersey, he helped establ ish thetechnique of per-channel coding—abellwether for the telephone indus-try at the earliest stage of the inte-grated circuit industry.

He is most widely recognized forhis work on the use of oversam-pling techniques to improve theperformance of analog-to-digitaland digital-to-analog converters.Today, this form of conversion isthe nearly universal approach tovoice and audio encoding for bothlandline and wireless telephonetechnology and is used in a widerange of communications, comput-ing, industrial automation and elec-tronic entertainment systems.

Dr. Wooley has also made majorcontributions to the design of high-speed data conversion circuits andtheir real izat ion in IC form. Hismost recent work has focused onincreasing the power efficiency ofintegrated analog-to-digital con-verters—an improvement crucial toapplications in new portable com-munications systems.

In private industry and at Stan-ford University, Dr. Wooley hasdeveloped a world-renownedresearch effort in data conversion.He holds five U.S. patents and haspublished more than eighty papersin this area.

An IEEE Fellow, he has served asthe president of the IEEE Solid-State Circuits Society from 2000 to2001 and as the Editor of the IEEEJournal of Solid-State Circuits. Hehas also served as chairman of boththe International Solid-State Cir-cuits Conference and the IEEE Sym-posium on VLSI Circuits. His manyhonors include the University ofCalifornia University Medal and theIEEE Third Millennium Medal.

He received his bachelor’s, mas-ter’s and doctoral degrees from theUniversity of California at Berkeley,all in electrical engineering.

Alfred U. Mac RaeEDS Vice-President of Awards

Mac Rae TechnologiesBerkeley Heights, NJ, USA


The IEEE EAB Meritorious Achieve-ment Award in Continuing Educa-tion recognizes IEEE members forefforts to foster the maintenanceand improvement of educat ionthrough the process of accreditationengineering, engineering technolo-gy, computer science programs andappl ied science programs. Theaward consists of $1,000 and abrass and walnut plaque.

The 2004 Award was presented toCary Y. Yang “for extensive and inno-vative contributions to the continuingeducation of working professionals inthe field of micro/nanoelectronics”.He was presented with a plaque andcheck at the IEEE November BoardSeries in San Antonio, TX.

Cary Y. Yang(S’69, M’70, SM’84,F’99) received theB.S., M.S., andPh.D. degrees inelectrical engineer-ing from the Univer-sity of Pennsylvaniain 1970, 1971, and

1975, respectively. After working invarious research positions at M.I.T.,Stanford, and NASA, he foundedSurface Analytic Research, Inc. inMountain View, California and direct-ed sponsored research in surfaceand nanostructure science. In 1983he joined Santa Clara University andis currently Professor of ElectricalEngineering, Associate Dean of Engi-neering, and Director of Center forNanostructures.

Over the past two decades, Pro-fessor Yang has initiated innovativeprograms to educate and train tech-nical professionals in various stagesof their careers. In the eighties, hedeveloped and organized shortcourses on timely topics in silicon

technology to Silicon Valley profes-sionals. In the mid-nineties, heoffered short courses on semicon-ductor technology for SEMI as partof a retraining program for profes-sionals in other fields. Since themid-eighties, he has providedopportunities for his students tospend extended periods in compa-nies in Japan, where they collabo-rated with their hosts on their thesisresearch. More recently, he foundedthe Center for Nanostructures atSanta Clara, which offers interdisci-pl inary research and educationopportunities for university studentsand faculty, high school studentsand teachers, as well as Silicon Val-ley technical professionals.

Dr. Yang has been a consultant toindustry and government, and a vis-iting professor at Tokyo Institute ofTechnology, University of Tsukuba,National University of Singapore,the University of Pennsylvania, andthe University of California, Berke-ley. He is a Fel low of IEEE andserved as Santa Clara Valley Chap-ter Chair, Regions/Chapters Chair,Vice President, and President of theIEEE Electron Devices Society. From2002 to 2003, he served as an elect-ed member of the IEEE Board ofDirectors, representing Division I.He was an editor of the IEEE Trans-actions on Electron Devices, in thearea of MOS devices.

Dr. Yang was elected Fellow ofthe IEEE in 1999 “for contributionsto microelectronic education andthe understanding of interfacialpropert ies of s i l icon-baseddevices”.

Alfred U. Mac RaeEDS Vice-President of Awards

Mac Rae TechnologiesBerkeley Heights, NJ, USA

EDS Member Named Winner ofthe 2004 IEEE Educational

Activities Board Award

Neal G. Anderson*Joerg Appenzeller*Dmitry O. Batrakov*Bradley W. Baumeister*Jezekiel Ben-Arie*Albert S. BergendahlLamarr A. BrownSeshu B. Desu*Jun CaiJohan CatrysseCharles L. CernyHermann EvlMichel Frei*David W. GalipeauEugenio Garcia-MorenoYogesh B. GianchandaniHans-Joachim Gossmann*V.S. Rao GudimetlaLarry Hornbeck*Mark G. JohnsonKevin S. Jones*Telesphor KamagaingDavid J. KlotzkinZachary J. LeminosStephen A. Lynch

Karen Weil MarkusGlenn H. MartinJoe McPherson*Vitali V. Metlushko*Mohamed MissousArthur S. MorrisTetsuo NakamuraAzad J. NaeemiTodd W. NicholsKameshwar PoollaMahmudur RahmanRavi P. RaoFrancis M. Rotella*Sitesh K. RoyThomas S. RuppTakeo ShibaPritpal SinghDennis M. SylvesterMarek Syrzyeki*Brian ThibeaultYi Wei*Robert B. WelstandBurnell G. WestCharles K. Williams

* = Individual designated EDS asnominating entity

If you have been in professionalpractice for 10 years, you may be eligi-ble for Senior Membership, the highestgrade of membership for which an indi-vidual can apply. New senior membersreceive a wood and bronze plaque anda credit certificate for up to US $25 for anew IEEE society membership. In addi-tion, a letter will be sent to employers,recognizing this new status.

For more information on senior mem-ber status, visit http://www.ieee.org/membership/grades_cats.html#SENIORMEM To apply for senior member status,fill out an application at http://www.ieee.org/organizations/rab/md/smelev.htm.

Congratulationsto the EDS

Members RecentlyElected to IEEESenior Member

Grade!

EDS Member Named Winner ofthe 2004 IEEE Educational

Activities Board Award

Congratulationsto the EDS

Members RecentlyElected to IEEESenior Member

Grade!


Supriyo Bandyopadhyay, VirginiaComonwealth Univ., Richmond, VA,USA - for contributions to device applicationsof nanostructures

Henri Marius Baudrand , EcoleNationale Supérieure d’Electrotech-nique, Toulouse, France - for contributions to the electromagneticmodeling of microwave circuits andantennas

Robert Christopher Baumann ,Texas Instruments, Dallas, Texas,USA - for contributions to the understandingof the reliability impact of terrestrialradiation mechanisms in commercialelectronics

Duane S. Boning, MIT, Cambridge,MA, USA - for contributions to modeling and con-trol in semiconductor manufacturing

William D. Brown, University ofArkansas, Fayetteville, AR, USA - for leadership in furthering education ofhigh density electronics

Jeff D. Bude, Agere Systems, NewProvidence, NJ, USA - for contributions to the deep submicronMOSFETs

Robert S. Chau, Intel Corporation,Beaverton, OR, USA - for contributions to gate dielectricand transistor technology for micro-processors

Clifton G. Fonstad, MassachusettsInst. of Technology, Cambridge, MA,USA - for leadership in compound semicon-ductor heterostructure devices

William Robert Frensley, Universityof Texas at Dallas, Richardson, TX,USA - for contributions to nanometer-scalequantum semiconductor devices

Guido V. Groeseneken, IMEC, Leuven,Belgium - for his contributions to the physicalunderstanding and the modeling of relia-bility of metal oxide semiconductor fieldeffect transistors

Ken-ya Hashimoto, Chiba University,Chiba, Japan - for contributions to simulation anddesign for surface acoustic wavedevices

George L Heiter, Heiter MicrowaveConsulting, Westford, MA, USA - for contributions to microwave circuits,including linear amplifiers and spacediversity combiners

G. Benjamin Hocker, HoneywellLaboratories (Retired), Minnetonka,MN, USA - for leadership in microelectromechan-ical system technology

James Albert Hutchby, Semiconduc-tor Research Corp., Triangle Park, NC,USA - for contributions to the design of lowpower static random access memories

Tadao Ishibashi, NTT Electronics Cor-poration, Kanagawa, Japan - for contributions to high-speed andoptoelectronic semiconductor devices

Noble M. Johnson , Palo AltoResearch Cneter, Palo Alto, CA, USA - for contributions to the control of impu-rities in semiconductors

Masaaki Kuzuhara, NEC Corporation,Otsu, Shiga Prefecture, Japan - for contributions to Group III-Vmicrowave power devices

Joy Laskar, Georgia Institute of Tech-nology, Atlanta, GA, USA - for contributions to the modeling anddevelopment of high frequency com-munication modules

Kartikeya Mayaram, Oregon StateUniv, Corvallis, OR, USA - for contributions to coupled deviceand circuit simulation

Deirdre R. Meldrum, University ofWashington, Seattle, Washington, USA - for contr ibutions to genomeautomation

John Melngail is , University ofMaryland, College Park, MD, USA - for contributions to focused ion beamapplications

Hisayo Sasaki Momose, ToshibaCorporation, Kanagawa, Japan - for contributions to ultra-thin gateoxide metal oxide semiconductor fieldseffect transistors

Mehrdad M. Moslehi, Semizone Inc.,Palo Alto, CA, USA - for contributions to single wafer pro-cessing technologies

Laurence W. Nagel, Omega Enterpris-es, Randolph, NJ, USA - for contributions to the field of integrat-ed circuit simulation

Hidehito Obayashi, Hitachi High-Tech-nologies Corporation, Ibaraki, Japan - for contributions to critical dimensionscanning electron microscopy

Yutaka Ohmori, Osaka University, Osa-ka, Japan - for contributions to the development oforganic and semiconductor light emit-ting materials and devices

Shinji Okazaki, Assoc. of Super-Advanced Elec. Technologies, Tokyo,Japan - for contributions to the resolutionenhancement technology in optical andelectron-beam lithography

Manijeh Razeghi, Northwestern Uni-versity, Evanston, IL, USA - for contributions to the developmentof compund semiconductor growthtechnology

Mark Stephen Rodder, Texas Instru-ments, Dallas, TX, USA - for contributions to deep sub-microncomplementary metal oxide semicon-ductor technology

40 EDS Members Elected to the IEEE Grade of Fellow - Effective 1 January 200540 EDS Members Elected to the IEEE

Grade of Fellow - Effective 1 January 2005


Enrico James Sangiorgi, University ofBologna, Cesna, Italy - for contributions to the modeling andcharacterization of hot carriers and nonstationary transport effects in small sili-con devices

Phillip Miles Smith, BAE Sytems,Nashua, NH, USA - for contributions to microwave highelectron mobility transistors

Tangali S. Sudarshan, Univ. of SouthCarolina, Columbia, SC, USA - for contributions to surface flashover ofdielectric and semiconductor materials

Hidehiko Tanaka, University of Tokyo,Tokyo, Japan - for contributions tohigh performancecomputation models

Juzer M. Vasi, Indian Institute ofTechnology (IIT) Bombay, Mumbai,India - for leadership in microelectronicseducation

Sophie V. Verdonckt-Vandebroek,Xerox Corporation, Webster, NY, USA - for leadership in developing photocopierproducts

Lois D. Walsh, Air Force Research Lab,Rome, NY, USA - for leadership in electronic devicereliability

Kevin John Webb, Purdue University,West Lafayette, IN, USA - for contributions to numerical model-ing and characterization techniques ofpassive and active devices

Jason Chik-Shun Woo, UCLA, LosAngeles, CA, USA - for contributions tonanoscale sillicon on insulator andbulk metal oxide semiconductordevice physics and technology

Donald Coolidge Wunsch, Univer-sity of Missouri - Rolla, Rolla, MO,USA - for contributions to hardwareimplementations of reinforcement andunsupervised learning

Kazuo Yano, Central Research Lab-oratory, Hitachi, Ltd., Tokyo, Japan -for contributions to nanostructured-sil-icon devices and circuits andadvanced CMOS logic

The 6th IEEE EDS Mini-colloquium onNAnometer CMOS Technology (WIMN-ACT) was successfully held January 21-22, 2005, at theNational Chiao TungUniversity (NCTU),in Hsinchu, Taiwan.This 2005 workshopwas organized byboth the IEEE EDTaipei Chapter andthe National ChiaoTung University,financially co-spon-sored by the IEEEElectron DevicesSociety, IEEE EDTaipei Chapter,National ChiaoTung, and TokyoInstitute of Technol-ogy and technically co-sponsored bythe ED Japan Chapter.

This one and half day meetingcovered seven technical sessions,and it included social functions forour EDS members, nonmembers,professors, graduate students, andkey engineers from Research unit,NDL, ITRI, as well as from the Sci-ence Park. Twenty professors/experts

from NCTU, TIT, ITRI and UMC wereinvited to give talks on Nanotechnol-ogy, Nonvolatile memory technolo-

gy, Interconnect, High speedoptoelectronic devices/IC, bioelec-tronics, organic-electronics andquantum scale devices, etc. Out of atotal of 20 invited speakers, 9 of themare Distinguished Lecturers (DL) ofIEEE EDS. At this time, the total num-ber of DLs in the Asia-Pacific regionis 43. This is the largest WIMNACTever held with the most DLs who

gave talks and with more than 120attendees from universities and Sci-ence Park, the so called Taiwan Sili-

con Valley.The guest-of-

honor was Profes-sor Peter C.Y. Wu,Dean of EECS Col-lege at NCTU, whodelivered an open-ing speech to theinvited guests andaudience. Follow-ing Professor Wu,EDS President,Hiroshi Iwai invit-ed the audience tobecome membersof the IEEE EDSwith the benefit ofpurchasing the

EDS Archival Collection on DVDwhich covers 50 years of papersfrom Transactions on ElectronDevices, Electron Device Letters andthe technical digests of the Interna-tional Electron Devices Meeting. TheWorkshop Chair, Prof. Steve Chung,then gave an outline of the work-shop. This was followed by Prof.Iwai who gave the first talk on “New

Invited speakers and key members of NCTU participating in the workshop (From left seated) Steve Chung (1st,Workshop Chair), Peter C. Y. Wu (4th, Dean of EECS college, NCTU), Hiroshi Iwai (5th, President of EDS)

EDS Distinguished Lecturers Participate in the 6th WIMNACT - Taiwan

EDS Distinguished Lecturers Participate in the 6th WIMNACT - Taiwan


Technology Study for Future Down-scaling CMOS: High-k and PlasmaDoping”. The other eight DL talkswere as follows: (1) Challenges andOpportunities for Ultra-Thin GateOxide Nano-CMOS Device Interfaceand Reliability Studies (Steve S.Chung, NCTU); (2) Advanced CMOSTechnology Development for SOCFoundry (S. W. Sun, UMC); (3)Nanocrystalline Silicon Quantum DotDevices (S. Oda, TIT); (4) Topics relat-ing to CMOS Circuits: TransmissionLine Interconnect and CMOS Recon-figurable Circuit Technology (K.Masu, TIT); (5) Non-volatile Ferro-electric-Gate Field Effect Transistor(E. Tokumitsu, TIT); (6) OrganicMonolayer Dielectrics and Its Appli-cation to Organic Devices (M. Iwamo-to, TIT); (7) InP-HeterojunctionBipolar Transistors with Submicron-Emitter (Y. Miyamoto, TIT) and (8)High IP3 HEMT for Wireless Applica-tions (Ed Y. Chang, NCTU). The othereleven invited talks were given bynon-DL’s, in which several interestingtopics included: High-k Gate Dielec-tric and Nanocrystal for Semiconduc-tor Device Applications (T.F. Lei,NCTU), Evaluation on the Mechanical

Properties of Micro-Meter ScaleSpecimens for MEMS Components(Y. Higo, TIT), NanoelectronicsResearch at ITRI (M. J. Tsai,ERSO/ITRI), Large-area Semiconduc-tive Materials for Imaging Devices (J.Hanna, TIT), Conjugate Polymers forLight Emitting Diodes (C. S. Hsu,NCTU), Nanostructure ElectronDevices for Terahertz Amplificationand Oscillation (M. Asada, TIT,) etc. Adetailed list of the speakers and theirtopics as well as the activities, can beobtained from the Chapter web site.

In addition to the invited talksgiven to the audience, we alsoarranged three places for our invit-ed guests to visit, including UMC,ITRI Nanotechnology Center, andthe National Nano Device Lab (NDL)on the NCTU campus. UMC is oneof the well-recognized twin-giants ofIC foundry in the world and based inHsinchu Science Park. The UMC vis-it included a briefing and the tour ofan 8” fab. ITRI provided a very nicepresentation and a tour of a nan-otechnology center which facilitatessimilar research activities. Also,NDL is a government-sponsored labwhich facilitates the fabrication of

advanced device module and pro-vides facilities for service to univer-sities island-wide.

At the end of the workshop, apanel discussion was held. Presi-dent C.Y. Chang of NCTU hosted allinvited speakers with a wonderfuldinner at the Lakeshore Hotel. Sev-eral action items were discussedrelated to EDS. The first one is thatthe ED Taipei Chapter Chair, SteveChung, will take action to form astudent chapter for graduate stu-dents as soon as possible, since theED Taipei has a sufficient numberof student members, and there wasa lot of enthusiasm expressed fromthe attending students. The secondone is that during the last IEEETaipei Section board member meet-ing, Steve Chung suggested to theSection Chair to take action to visitScience Park top officials in the ICcompany to promote IEEE member-ship in every technical field. We arelooking forward to seeing this hap-pen. The third one is the promotionof the EDS Senior Member Programas there are many senior professorsin the semiconductor area in theuniversities of Taiwan. The last oneis to increase the number of DLs inTaiwan by soliciting the EDS mem-bership especially from the facultyof universities, such as NCTU.

In summary, the 6th WIMNACT-Taiwan has been quite successfuland fruitful through this workshopand DL visits, with the largest num-ber of invited speakers and havinga sufficient number of participantsattending. After the workshop, allthe at tendees showed a stronginterest in the invited talks as wellas interest in EDS activities. Severalitems targeted for membership pro-motion will be taken immediately.

For more information, please vis-it http://www.edsTaipei.edu.tw

Steve ChungWIMNACT-Taiwan ChairED Taipei Chapter Chair

National Chiao Tung UniversityHsinchu, Taiwan

The poster for 2005 WIMNACT- Taiwan, Hsinchu, NCTU, Taiwan


On Dec. 12, 2004, in conjunctionwith IEDM’04, the Regions 4-6Chapters Meeting was held at theHilton & Towers Hotel, San Francis-co. Among the attendees were therepresentativesof chapters fromthese Regions,the representa-t ives f rom theR e l / C P M T / E DChapter of Sin-gapore, severalchapter partners,chairs and vice-chairs of theS u b c o m m i t t e eof Regions andChapters (SRC),and the Directorof IEEE Region 6.

The meetingstarted with anintroduction byPaul Yu, Chair ofthe North Ameri-ca West (NAW)SRC Subcommittee, who then intro-duced Cor Claeys, EDS Vice-Presi-dent of Regions/Chapters. Cordiscussed the importance of thechapters and how to promote chap-ter activities. He announced the win-ner of the 2004 Chapter of the YearAward – the Singapore Chapter,which was represented by the Chap-ter Chair, Kin Leong Pey. The chap-ter, consisting of 165 EDS members,had activities with both academiaand industry emphasis. In 2004 thechapter had organized two interna-tional conferences and one mini-col-loquium, in addition to many shortcourses and technical meetings.

This meet ing was a imed atbringing together the chapter lead-ers within the NAW SRC, to discussvar ious issues confront ing thechapters and their members. Tenchapters (Austin, Boise, Buenaven-tura, Cali fornia Orange County,Dallas, Phoenix, Pikes Peak, SantaClara, University of California atSan Diego, University of Illinois)out of 21 chapters reported theirrecent activities and their future

plan. Several of these chapters aresituated in areas with strong indus-trial presence (for instance, Austin,Boise, Phoenix, and Santa Clara)and their technical meetings were

not short of current topics relatedto semiconductor manufacture. Inparticular, the Santa Clara Chapterhad held monthly seminars withgreat attendance. We were verydel ighted to learn that severalchapters emerged from the dor-mant mode and have been organiz-ing chapter meetings and otheractivities.

The nomination of the EDS Dis-tinguished Lecturers (DLs) fromchapters and SRC was sought; andthe supporting roles played by thechapter partners and SRC were dis-cussed. The mini-colloquium orga-nized by chapters was regarded asa very effective means to gatherlocal members on common interestareas. Two of the chapters in NAW(Boise and Phoenix) have muchexperience in organizing one-dayworkshops on microelectronicdevices and component manufac-ture and packaging; they providedtheir insights on mini-colloquiumto other chapters.

Some chapters with diverseinterests among the members had

elected to use the web-basedresource center to serve the mem-bers. Some chapters commentedthat, while excellent technical pre-sentations were important, social

and outreach activi-t ies organized bythe chapter werehelpful in “gluing”the membership.Professional shortcourses were foundby some chaptersto be very helpfulto members forupdating them onemerging technolo-gies (several chap-ters noted therecent shift of focusof local semicon-ductor industry hasbecome a mainconcern to mem-bers). Many chap-ters noted thatnanotechno logy ,

such nano-CMOS, became a hottopic for their meetings. Videos ofshort courses at past IEDMs werefrequently used by some chapters.We were informed that the tapingof the IEDM short courses would bediscontinued.

Following the chapter reports,we held an open discussion. Somechapters inquired on how to set-upthe DL visits, as well as how to getthe IEEE Section to publicize thechapter meetings in the local com-munities. Every year, EDS providesup to a $1,000 chapter subsidy toeach ED chapter, and up to $500 toeach joint chapter. An additionalresource is available from EDS forfunding mini-colloquia. Evelyn Hirt,IEEE Region 6 Director, explainedthat the IEEE Section can also be aresource for financial sponsorshipof DL visits. She mentioned otherchapter resources, such as emailalias list, that are available at theIEEE website.

In regard to attract ing moreattendance to chapter seminars,opinions were expressed on semi-

Report of Regions 4-6 (Central, Southwestern& Western USA) Chapters Meeting at IEDM

Attendees of the EDS Regions 4-6 Chapters Meeting at the Hilton in San Francisco

Report of Regions 4-6 (Central, Southwestern& Western USA) Chapters Meeting at IEDM


FINAL CALL FOR NOMINATIONS2005 Electron Devices Society Graduate

Student Fellowship

Description: One year fellowshipsawarded to promote, recognize, andsupport graduate level study andresearch within the Electron DevicesSociety’s field of interest: The field ofinterest for EDS is all aspects of thephysics, engineering, theory and phe-nomena of electron and ion devicessuch as elemental and compoundsemiconductor devices, organic andother emerging materials baseddevices, quantum effect devices, opti-cal devices, displays and imagingdevices, photovoltaics, solid-state sen-sors and actuators, solid-state powerdevices, high frequency devices,micromechanics, tubes and other vac-uum devices.

The society is concerned withresearch, development, design, andmanufacture related to the materials,processing, technology, and applica-tions of such devices, and the scientif-ic, technical and other activities thatcontribute to the advancement of thisfield.

At least one fellowship will beawarded to students in each of the fol-lowing geographical regions every year:Americas, Europe/Middle East/Africa,Asia & Pacific.

Prize: US$5,000 to the student,US$1,000 grant to the student’s depart-ment, US$1,000 grant to the student’s

faculty advisor in support of the stu-dent’s project, travel subsidy of up toUS$3,000 to each recipient to attendthe IEDM for presentation of awardplaque. The EDS Newsletter will featurearticles about the EDS Graduate Fel-lows and their work over the course ofthe next year.

Eligibility: Candidate must: be an IEEEEDS student member at the time ofnomination; be pursuing a doctoratedegree within the EDS field of intereston a full-time basis; and continue his/herstudies at the current institution with thesame faculty advisor for twelve monthsafter receipt of award. Sponsor must bean IEEE EDS member. Previous awardwinners are ineligible.

Basis for Judging: Demonstration ofhis/her significant ability to performindependent research in the fields ofelectron devices and a proven history ofacademic excellence.

Nomination Package:• Nominating letter by an EDS member• Two-page (maximum) statement by

the student describing his or her edu-cation and research interests andaccomplishments

• One-page biographical sketch of thestudent

• One copy of the student’s under-

graduate and graduate transcripts/grades. Please provide an explana-tion of the grading system if differentfrom the A-F format

• Two letters of recommendation fromindividuals familiar with the student’sresearch and educational credentials

Timetable:• Nomination packages will be due at

the EDS Executive Office no laterthan May 16, 2005

• Recipients will be notified by July 15,2005

• Monetary awards will be given byAugust 15, 2005

• Formal presentation of the awardswill take place at the IEDM AwardsCeremony in December 2005.

• Nominations packages can be sub-mitted by mail, fax or e-mail, but ahard copy must be received at theEDS Office.

Send completed package to:IEEE Operations CenterEDS Executive OfficeEDS Graduate Student FellowshipProgram 445 Hoes Lane, Piscataway, NJ 08854USAhttp://www.ieee.org/eds/fellowship

For more information contact:[email protected]

nar location and time, the openingup of the seminars to all the IEEEsocieties as well as to non-IEEEmembers, and the importance of

informing the attendees the benefitsof the IEEE membership. The DallasChapter has received positive feed-backs for placing a copy of the tech-

nical presentations on the web. The meeting was adjourned and

the participants continued their dis-cussion into the AdCom dinner!

FINAL CALL FOR NOMINATIONS2005 Electron Devices Society Graduate

Student Fellowship

Paul YuChair, NAW SRC

University of California at San DiegoLa Jolla, CA, USA

Yuhua ChengVice-Chair, NAW SRCSkyworks Solutions, Inc

Irvine, CA, USA

Sunit TyagiVice-Chair NAW SRC

IntelHillsboro, OR, USA

Albert WangVice-Chair, NAW SRC

Illinois Institute of TechnologyChicago, IL, USA

Rebecca WeltyVice-Chair NAW SRC

Lawrence Livermore National LaboratoryLivermore, CA, USA


A Report on DL Lecture at IITby Cary Yang- by Albert Wang

On December 8, 2004, Prof. CaryYang of Santa Clara University, visit-ed the IEEE Student Branch at the Illi-nois Institute of Technology (IIT) inChicago, hosted by Prof. Albert Wangof IIT. His visit consisted of severalactivities which included meetingsand discussions with students, dis-cussions on various topics with ECEFaculty members at the Dept. of Elec-trical and Computer Engineering andtours of the IIT research facilities.Cary also delivered a distinguishedlecture entitled “Carbon Nanotubesas On-chip Interconnects”, which waswell received by an audience of about40 students and faculty members.

~ Ibrahim Abdel-Motaleb, Editor

ED/MTT Orange County- by Yuhua ChengThe Orange County ED/MTT jointchapter held a seminar on Nov. 17,2004 at the Double Tree HotelOrange County Airport. Ali Nikne-jad, Professor of Electrical Engi-neering and Computer Sciences inUniversity of California at Berkeley,was invited to deliver a lecture on“60GHz CMOS: Opportunities andChallenges”. Dr. Yuhua Cheng ofSiliconlinx, hosted the seminar. Inthis seminar , Prof . Niknejadreviewed the status of commercialCMOS chips routinely operate up to5 GHz and explored exciting newopportunities in higher frequencybands such as 3-10 GHz, 17 GHz, 24GHz, and 60 GHz. According to Prof.Niknejad, the Berkeley WirelessResearch Center has demonstratedthat standard 130nm CMOS tech-nology is capable of operation up to60 GHz, enabl ing a host of newmm-wave applications such as Gb/sWLAN and compact radar imaging.Prof. Niknejad’s presentation high-lighted the design and modelingchallenges in moving up to thesehigher frequencies and predictedthat a merger of RF and microwavedesign perspectives will be used tooffer insight into the problems.

The lecture took about 60 min-utes and 20 minutes for questionsand answers. Prof. Niknejad’s talkwas well received by the audience.About 35 attendees from universi-ties and companies attended theseminar.

~ Sunit Tyagi, Editor

Region 9 Outstanding Student Paper Award

- by Francisco J. García-SánchezThe first EDS Region 9 Biennial Out-standing Student Paper Award wasconferred for the first time duringthe inaugural session of the FifthInternational Caracas Conference onDevices, Circuits and Systems (ICCD-CS 2004) on 3 November 2004, atBarceló Bávaro Convention Center,Punta Cana, Dominican Republic.The award aims to promote, recog-nize, and support meritoriousresearch achievement on the part ofRegion 9 (Latin America and theCaribbean) students, and their advi-sors, through the public recognitionof their published work, within theElectron Devices Society’s field ofinterest.

The award was presented by EDSPresident Prof. Hiroshi Iwai to twoco-recipients: Adeilton Cavalcante deOliveira Jr., of the UniversidadeEstadual de Campinas, Brazil, for thepaper entitled “Modeling and Simu-lation of Static Characteristics of aPMOS Compatible Hot Wire Princi-ple-Based Flow Micro Sensor” andto Miguel Angel Aleman-Arce, ofCenter for Research and AdvancedStudies of the National PolytechnicInstitute, Mexico, for the paper enti-tled “The Integral Function Method:A New Method to Determine Nonlin-ear Harmonic Distortion”

Both papers were published in theproceedings of the 18th InternationalSymposium on Microelectronics

Prof. Cary Yang, delivering lecture to IITstudents and faculty members

Adeilton Cavalcante de Oliveira, Jr. and MiguelAngel Aleman-Arce, recipients of the first EDSRegion 9 Outstanding Student Paper Award

Prof. Ali Niknejad (the third from left on the first row) visits the ED/MTT Orange County chapter

Regional and Chapter NewsRegional and Chapter News

USA, CANADA &LATIN AMERICA(Regions 1-6, 7 & 9)

USA, CANADA &LATIN AMERICA(Regions 1-6, 7 & 9)


Technology and Devices (SBMicro)held September 8-11, 2003 in SaoPaulo, Brazil.

Nomination information for thenext edition of this award may befound in the Awards Section of theEDS web page.

ICCDCS 2004- by Francisco J. García-SánchezThe fifth edition of the InternationalCaracas Conference on Devices, Cir-cuits and Systems (ICCDCS 2004)was held 3-5 November 2004, at theBarceló Bávaro Convention Center,in Punta Cana, Dominican Republic.

The conference is organized byVenezuela’s ED/CAS/PEL Joint Chap-ter with the technical co-sponsorshipsupport from the Electron Devicesand Circuits and Systems societies,and the support of Simón BolívarUniversity, Venezuela, University ofCentral Florida, USA, Center forResearch and Advanced Studies ofthe National Polytechnic Institute,Mexico, National Institute of Astro-physics, Optics and Electronics, Mex-ico, Intel Corporation, and FreescaleSemiconductor.

ICCDCS is a biannual internationaltechnical conference that has beenheld periodically since 1995 at differ-ent locations in the Caribbean basin.It aims to provide a forum for sharinginformation, know-how and technicalexperiences about electronic devicesand their circuits and systems appli-cations, and at the same time foster-ing personal and professionalrelations among engineers, scientistsand academicians from Latin Ameri-ca and the rest of the World.

This fifth edition continued toadvance this goal with the presenta-tion of over seventy invited and con-tributed papers by authors fromAustria, Bangladesh, Brazil, Belgium,Canada, China, Colombia, France,Germany, Hong Kong, Iran, Ireland,

Japan, Korea, Mexico, Norway,Poland, Puerto Rico, South Africa,Spain, United Kingdom, USA, andVenezuela. In addition to the regulartechnical paper sessions, the confer-ence featured two special PlenaryKeynote presentations: The first one,by Dr. Ricardo E. Suárez-Gartner,Director of the Platform TechnologiesLaboratory, Corporate TechnologyGroup of Intel Corporation, analyzedfuture challenges for microprocessor-based systems. The other keynotetalk, by Edgar Sánchez-Sinencio, TI J.Kilby Chair Professor of ElectricalEngineering, of Texas A&M Universi-ty, dealt with the implementation ofRF wireless systems.

The Convention Center where theconference was held is located with-in the Barceló Bávaro Beach Resortin Punta Cana, on the east coast ofthe Dominican Republic. Speciallodging accommodations were madeat five resort hotels for the partici-pants. The beautiful tropical sur-roundings and recreational facilitiesprovided an ideal setting for manyinformal but fruitful meetings anddiscussions among the participants.

The name of this conference hasbeen changed slightly from its originalto better reflect its geographical loca-tion. Hereafter it will be known as theInternational Caribbean Conference onDevices, Circuits and Systems. Its nextedition, its sixth, will be held duringthe first quarter of 2006 in the MayanRiviera on the Mexican Caribbean. Forinformation visit the web site athttp://pancho.labc.usb.ve/ICCDCS2004.

~ Adelmo Ortiz-Conde, Editor

AP/ED/MTT/COM/EMC Tomsk- by Oleg V. StoukachOur joint chapter organized severalsuccessful events during 2004. Theseincluded the Tomsk seminar on Mod-eling, Design and Control, recruitingof new IEEE members and participat-ing in the Russia Siberia SectionMeetings. There were five meetingsin 2004. Every meeting consisted oftwo parts: a luncheon at a differentNovosibirsk restaurant and a busi-ness talk in the Section office relatedto current chapter issues. In 2004,

our members took part in severalInternational Microwave and Elec-tronics conferences in Germany, theNetherlands, Ukraine and Russia.The Chapter has also hosted a num-ber of activities, organized in collab-oration with the GOLD AffinityGroup. The Chapter has actively pro-moted international conferences,national seminars, conferenceawards, EDS Distinguished Lecturertalks, GOLD activities and a newmembership drive.

We would l ike to thank Dr.Evgeniy Golovin for his great contri-bution to our Chapter and welcomethe new 2005 officers. The chair andsecretary of the Tomsk Chapter elect-ed for 2005 is Oleg Stoukach, SeniorMember. Our main event for 2005 isthe IEEE-Siberian Conference onControl and Communications, whichwill be held in October. Please findthe Call for Papers on the Web at theaddress given below:

http://ieee.tusur.ru/files/activities/sibcon2005_call_en.pdf.

Since 1995, this conference hasbeen organized biannually. It focuseson advances in microwave devicesfor control and communications andtechnology innovations from differ-ent points of view, in order toimprove the understanding in thefield. We will also establish and pro-mote an Award for the best servingof our membership to the ED Societyand Joint Tomsk Chapter.

ED Novosibirsk State Technical University (NSTU) Student Branch- by Alexander V. GridchinIn accordance with IEEE Bylaw, atthe end of 2004 the period of author-ity of ED NSTU Student BranchCounselor Mr. Vladimir A.Kolchuzhin is exhausted. At thesame time, the ED NSTU StudentBranch Chair, Mr. Oleg V. Lobach,

EUROPE, MIDDLEEAST & AFRICA(REGION 8)

Officers of Russian Siberia Section, SectionExecutive Committee meeting, Novosibirsk,

SibSUTI, 12/22/04

EUROPE, MIDDLEEAST & AFRICA(REGION 8)

ICCDCS 2004


has finished his period of educationand cannot continue his work as Stu-dent Branch Chair. The election of anew Student Branch Chair will beheld in the Spring of 2005. To avoidstopping the activity of StudentBranch, the NSTU Administrationhas asked Assoc. Prof. Alexander V.Gridchin to serve as the ED NSTUStudent Branch Counselor in 2005until the election of a new StudentBranch Counselor.

The information about changesin the ED NSTU Student BranchExecutive Committee will be pro-vided as soon as possible to theIEEE Russian Siberia Section Chair,Prof . V iatcheslav P. Shuvalov,which will provide it to IEEE Region8 and the IEEE Societies.

For official contacts with the EDNSTU Student Branch, please usethe address: Novosibirsk State Tech-nical University, Dept. of Appliedand Theoretical Physics, Karl MarxProspect, 20, 630092, Novosibirsk,Russia, e-mail [email protected] avoiding the spam problemplease DO NOT send several copiesof each e-mail message to this e-mailaddress. Since most Student Branchmembers do not have e-mail boxesand limited access to computers, theinformation about IEEE activity issent to Student Branch via personalcontacts.

The ED NSTU Student Branch isplanning to increase its activities in2005. We’re planning three mainevents. The first event is the 6thInternational Workshop and TutorialEDM’2005 which will be held 1-5July 2005 at the NSTU ConferenceCenter ‘Erlagol’. The scientific pro-gram of EDM ’2005 is expanded;

new topics like ‘Information safetyof computer networks’, ‘Applicationof digital electronics to modern tech-nologies’as well as, ‘Worldwide edu-cational and research programs inelectronics and physics for studentsand young specialists’ were added.We are seeking the academicexchange between our StudentBranch and Student Branches of for-eign Universities. The second eventis the 1st Workshop and Tutorial‘IEEE Electron Resources Applicationfor Science, Industry and Business(ERASIB-2005)’. We feel the necessi-ty to demonstrate the possibilities ofIEEE Xplore™, IEEE Standards Asso-ciation, and the IEEE Member DigitalLibrary. The off ic ial messagesrequesting technical and informationsupport will be sent to IEEE Region 8and the IEEE Societies. The thirdevent is the Technical Writers Con-test. Technical writing is becoming apopular profession, with many com-panies needing to have good writersfor writ ing manuals, technicaldescriptions, press releases, etc.Each IEEE Student Branch shouldprovide such possibilities world-wide. Our Student Branch is sug-gesting to announce this action asinternational. We are asking IEEEand its Societies to support thisaction.

The contact address is: Assoc.Prof. Alexander V. Gridchin, EDNSTU Student Branch Counselor,[email protected]

- Alexander V. Gridchin, Editor

SAFE-2004 Workshop- by Helga VarwijkThe annual workshop on “Semicon-ductor Advances for Future Electron-ics and Sensors” was held on 25 and26 November 2004 in Veldhoven,The Netherlands. This year about 90researchers from Belgium, Germany,The Netherlands and Switzerlandparticipated in the Workshop. Themain topics were Processing & RF,Devices, Materials & Modelling enSensors and Actuators.

During a combined session of theSAFE Workshop and the ProRiskWorkshop the Else Kooi Award wasgranted to Nebojsa Nenadovic fromthe DIMES Research Institute for hisresearch on electro-thermal effectsin high frequent silicon-on-glass-transistors. Dr. Nenadovic received

his Ph.D. degree with honor onNovember 1st 2004. His Ph.D. workwas done under the supervision ofProf. Liz Nanver.

The Else Kooi Award, named afterthe Dutch inventor of the LOCOSprinciple, is awarded each year to ayoung scientist for innovatingresearch in the field of semiconduc-tor devices.

More information is available atwww.stw.nl/programmas/safe orwww.ekp.nl

- Cora Salm, Editor

ED Israel- by Gady Golan A. On Sunday, November 7, 2004, atthe Holon Inst. of Technology (HAIT) – Holon, IsraelSubject of meeting: “Disk On KeyTechnical Introduction - 2004”Lecturer: Eyal Bichkov, CTO of M-Systems Israel.

Abstract:Introduct ion to the technologybehind the product, NAND flash,security on the fly, USB interface.Disk On Key has become a knownconsumer product, allowing trans-fer of high rate data from computerto computer . The lecture wi l ldescribe the key element within theproduct. The Disk On Key is a com-bination of Flash, algorithm, Sys-tem On a Chip ASIC and a USBfunctional i ty. Subjects covered:NAND Flash; SOC ASIC (basic archi-tecture); Security (basic element);USB (basic architecture).

B. On Wednesday, January 5, 2005,at the Holon Inst. of Technology (HAIT) - Holon, Israel. Subject of meeting: “Creative Prob-lem Solving”, Lecturer: Dr. Danni Wolfman,

EDM’2004 3rd prize winner NataliyaKhainovskaya makes her presentation on

simulation of the selective etching procedureof AIIIBV semiconductors.

Nebojsa Nenadovic receiving Else Kooi Award


Abstract: An organization’s relative advantagestems, among other things, from thecapacity of its personnel to come upwith creative solutions to technologi-cal and organizational problems.Such solutions:• Bring about a step improvement

in performance • Evolve from the system’s inner world • Surprising (once you invent them) • Simple • Few and far betweenThese solutions were demonstrated.Chairman of the meeting: Prof. GadyGolan - 90 people, students and acade-mic staff, attended the meeting at HAIT.

C. On Sunday, January 16, 2005, atthe Holon Inst. of Technology (HAIT) - Holon, Israel. Subject of meeting: 1. Entrepreneurial Skills Seminar –IEEE EDS - Landing Library - Videos.2. “Laser-Based Spectroscopy of Min-erals - Techniques and Applications”, Lecturer: Dr. Michael Gaft,

Abstract:In any practical application the

main task is composition analyses.There is no single detection tech-nique that can by itself provide a100% probability of different miner-als detection combined with a lowfalse alarm rate. We suggest systemapproach, which combines differentlaser-based technologies havingorthogonal detection and identifica-tion capabilities. In such a way thestrength of one technique may com-pensate for the weaknesses of theothers, and the vulnerability of onedetection device could be compen-sated for by another detectiondevice. Chairman of the meeting:Prof. Gady Golan - 70 people, stu-dents and academic staff, attendedthe meeting at HAIT.

- Gady Golan, Editor

ED/MTT India - by Dr. K. S. ChariDuring the Oct-Dec 2004 quarter, ourChapter activities centered on thefollowing events:

In association with the Depart-ment of Speech Language Sciences

and Department of Electronics of AllIndia Institute of Speech and Hear-ing, Mysore, the chapter organized a2-day National Workshop on SpeechProcessing at the AIISH campus inMysore during 4th-5th November.The event featured several technicalpresentations in the areas of speechsignal processing, signal processingin hearing aids, speech and speakerrecognition. A panel discussion onDigital Hearing Aids for hearing chal-lenged and a demo of voice andspeech systems brought out per-spectives in the respective fields.Various presentations were deliveredby: Dr. S.R. Savitri, Dr. K.S. Prema,Mr. Ajish Abraham, Mr. U. AjithKumar and Mr. V.V.S. Sai Ram fromAIISH, Mysore; Mr. Biju C. Oommen,CDAC Trivendrum; Mr. N. MohanSwamy, Siemens Pvt. Ltd, Banga-lore; Dr. Hema Murty, Dept. of Com-puter Science and Engineering, IITChennai; and Dr. T.V. Ananthapad-manabha, MS Ramaih School ofAdvanced Studies, Bangalore. Chap-ter Chair, Dr. K.S. Chari inauguratedthe Workshop and delivered thekeynote address titled “Speech Sys-tems - Unfolding Scenario”. Theevent brought under one forumresearchers, users and industry toreview the role of speech systemsand the electronic aids playing vari-ous roles in the area. The Workshopwas held under the guidance of Prof.M. Jayaram, Director AIISH Mysoreand the team lead by Dr. Savitri.About 100 participants across thecountry attended the event. A sec-tion of the attendees can be seen inthe picture.

The Chapter co-sponsored theAsia Pacific Microwave Conference(APMC) 2004 held 15-18 December2004 in Delhi. The conference fea-tured the following workshops priorto the conference 13–14 December:(i) modeling simulation and evolu-

tion of small geometric structures ofsub-micron devices, (ii) applicationsof artificial neural networks to RFand Microwave design and phasedarray antenna and adoptive beamforming arrays for radar and com-munication. The main conferencefeatured several technical sessionsand poster sessions. The technicalsessions started out with an inaugur-al on communication exposure andchallenges to microwave engineersby Prof. Raj Mittra, Penn State Uni-versity, USA. The sessions includedsolid-state devices and circuits, pas-sive design and circuits, microwaveand mil l imeter wave systems,phased and active array techniques,microwave education and technolo-gy, computer aided design, EMC andEMI, Microwave Antennas, photonicsand optics, ferrite and Saw compo-nents, MICs, Medical and biologicalapplications, MEMs Wireless RFcomponents and systems, EBG andMeta material and high speed digitalcircuits. Participants from differentcountries in addition to the postersession featured a total of 150 pre-sentations. The conference attractedabout 600 participants, with about250 from overseas. The conferencewas organized by the Dept. of Elec-tronic Science, Univ. of Delhi withProf. R.S. Gupta as Conference Chair,Prof. Anurag Sharma, Vice-Chair andDr. Mridula Gupta as Secretary. Thetechnical program committee hadProf. E. K. Sharma, and Prof. A.K.Verma as chairpersons. The chapterassisted the conference by invitingMTTs DLs to the event.

Meeting with IEEE MTTs Presi-dent-Elect and Region 10 CommitteeChair, Prof Tatsu Itosh: Utilizing theoccasion of APMC, Chapter Chairhad discussions on the 17th ofDecember with Prof Itosh and ProfGupta wherein various matters ofaccelerating the chapter activities,options for attracting higher finan-cial support from MTTS includingthe option of separating the MTTchapter from a joint chapter, com-plementing the India Chapter effortswith seeding their regional chaptersin Delhi, accessing DL services andspeaker bureau for technical activi-ties, initiating a specialist confer-ence in India, starting an MTT STARactivity, having the Chapter play aglobal role etc., was touched upon.

Inaugural of NWSP-2004.

ASIA & PACIFIC(REGION 10)ASIA & PACIFIC(REGION 10)


From these deliberations, it was inprinciple agreed that to enable amore directional growth of MTTactivities in the country, the issue ofstarting a dedicated India chapter byseparating it from the joint ED/MTTarrangement and also seeding aregional chapter in Delhi would bepursued as first step efforts. It wasalso decided after discussion with DrH P Vyas, Director, SSPL, Delhi thathe would take initiatives to form theMTT Delhi Chapter soon. Prof Guptaand Prof Itosh appreciated the activi-ties of the chapter.

REL/CPMT/ED Singapore-by Kin Leong PeyThe Chapter organized the followingtechnical talks/seminars during Oct-Dec 2004:• October 11, Dr. Professor Arun N.

Chandorkar of the Indian Instituteof Technology, Bombay, Indiagave a talk on “Technology Scal-ing and its Influence on Architec-ture Designs”.

• December 15, Dr. NatarajanMahadeva Iyer of IMEC, Belgiumgave a talk on “Silicon Technolo-gy Scaling and ESD Reliability”.

• A one-day short course on “Inte-gration of Copper with Low-kDielectrics” by Dr. Jeffrey Gambi-no, IBM, USA was held on 25October 2004 at the SheratonTowers, Singapore.

• A one-day short course on “Fail-ure Mechanisms and Reliability inIntegrated Circuits” by Dr. M.K.Radhakrishnan, NanoRel Consul-tants, 10 December 2004 at theSheraton Towers Singapore.

The 6th EPTC was held from 8 to 10December 2004. The responsetowards the conference was over-whelming with more than 300 regis-tered participants. More than 160papers were presented. An executiveforum on the trend and directions inkey packaging thrusts targeted attechnology leaders in the region wasconducted for the first time.

The 2005 International Sympo-sium on the Physical and FailureAnalysis of Integrated Circuits(IPFA’05), organized by the IEEERel/CPMT/ED Singapore Chapter,and technically co-sponsored by theIEEE EDS and RLS will be held atShangri-La’s Rasa Sentosa Resort,Singapore, 27–30 June 2005. The

second call for papers has beenannounced. For more information,please visit the IPFA’05 website athttp://www.ewh.ieee.org/reg/10/ipfa/html/2005/.

Dr. Xing Zhou, Chapter committeemember, was appointed Vice Chairfor the Subcommittee forRegions/Chapters (SRC-AP) for atwo-year renewable term. The Chap-ter donated $500 to the StudentChapter of the Nanyang Technologi-cal University branch for a “Back tothe Future” competition for post-graduate students.

ED/SSC Bangalore- by P.R. SureshThe ED/SSC Bangalore Chapter helda number of events in the periodOctober – December, 2004. Thechapter screened a set of videotapeson MEMS Performance and Reliabili-ty on October 6th. This short coursewas presented by researchers at theSandia National Labs in the IEDMconference. This was attended byboth the industry and academiacommunity.

Prof. P.R. Mukund of RochesterInstitute of Technology, USA, gave atalk on Chip-Package Co-Design ofRF Microsystems, on December 22.In this talk, he described the chal-lenges in integrating both RF circuit-ry and digital circuitry in a singleintegrated circuit or a single packagethat are difficult to overcome withtraditional design tools. He also pre-sented a chip package co-designmethodology and a resultant soft-ware tool that would help in concur-rent design. About 40 people fromindustry and academia attended thisworkshop.

ED Calcutta- by Banani SenThe ED Calcutta Chapter arranged aone-day tutor ial on “EmbeddedSystems and Their Applications InMobi le Communicat ion” jo int lywith the IEEE Calcutta Section andCentre for Mobile Computing andCommunication, Jadavpur Universi-ty on the 1st of October 2004. Thevenue of the tutorial was the ParkHotel, Kolkata. The speakers wereinvited from different parts of thecountry. The goal of this tutorialwas to develop a comprehensiveunderstanding of the technologies

behind the embedded systems.Applications of embedded systemsin mobile communications werealso highlighted in the tutorial. Thecourse was intended for students,researchers , facul ty , pract ic ingengineers related to the field ofElectrical, Electronics, Instrumenta-tion, Communication and ComputerEngineering. The topics taken up bythe invited speakers were:

Overview of Embedded Systems,Prof. A Sinha, Principal, TechnoIndia Kolkata; Processors and Mem-ories for Embedded Systems, Prof. ABasu, Computer Sc, & Engg, Dept.IIT. Kharagpur; Real Time OperatingSystems (RTOSs) and RelatedIssues; Prof. P.K. Biswas, Electronics& Electrical Comm, Engg, Dept. IIT.Kharagpu; Role of VLSI in Embed-ded System Design, Prof. S. Baner-jee, Electronics & Electrical Comm,Engg, Dept. IIT. Kharagpur; Applica-t ions of Embedded Systems inMobile Communications, Prof. R.V.Raja Kumar. Electronics & ElectricalComm, Engg, Dept, IIT. Kharagpur;Power Supply - Unsung Hero ofEmbedded Systems, Prof. K. Ray,Instrumentation & Electronics Engg.Dept. Jadavpur University.

ED Malaysia- by Burhanuddin Yeop MajlisThe 2004 IEEE International Confer-ence on Semiconductor Electronics(ICSE 2004) was organized and suc-cessfully held at the Mines BeachResort & Spa, Kuala Lumpur 7-9December, 2004. This was the sixthICSE organized by the Chapter ,technically co-sponsored by EDSand in-cooperation with the Insti-tute of Microengineering and Nano-electronics ( IMEN), Univers i t iKebangsaan Malaysia. The confer-

Opening Session of the Tutorial on”EmbeddedSystems and Their Applications in Mobile

Communications”


ence was financially sponsored bySi lTerra Malaysia Sdn. Bhd. ,Telekom R&D Sdn. Bhd. and MBETech Sdn. Bhd. The conference wasofficiated by YB Dato’ Seri RafidahAziz, the Minister of InternationalTrade and Industry.

ICSE 2004 provides an ideal plat-form to present the latest findings insemiconductor related issues and hasbecome the preeminent internationalforum on semiconductor electronicsover the last 12 years. It covers allaspects of the semiconductor technol-ogy, from materials issues and devicefabrication, MEMS and micro sen-sors, IC design and testing, manufac-turing and system applications. Theproceedings of ICSE 2004 consist ofseven invited papers and 150 con-tributed papers from all over theworld. The conference attendees thisyear numbered more than 200 fromJapan, Korea, Thailand, Italy, UK,USA, Iran, Singapore, Indonesia andMalaysia. Seven prominent speakerswere invited. The titles of the talkswere as follows: “Colloidal Self-orga-nization for Nanoelectronics” by Dr.Joydeep Dutta from the Asian Insti-tute of Technology (AIT); “InP/InGaAsHeterojunction Phototransistor forOptoelectronic Receivers” by Dr.Peter Houston from the University ofSheffield; “Modeling and Simulationfor ESD Protection Circuit Design andOptimization” by Dr. NatarajanMahadeva Iyer from IMEC, Belgium;“Commercialization of MEMS Tech-nology” by Mr. B.L. Ooi from MemsTechnology Berhad; “Perspectives ofLow Power Electronics” by Dr.Takayasu Sakurai from the Universityof Tokyo, Japan; “Low TemperatureBonding Process for Wafer-levelMEMS Packaging” by Dr. Wei Junfrom the Singapore Institute of Manu-facturing Technology and “OnlineWater Quality Monitoring on Brantas

River East Java Indonesia” by Dr.Masbah R.T. Siregar from the Indone-sian Institute of Sciences, LembagaIlmu Pengetahuan Indonesia.

In conjunction with the confer-ence, three tutorials were held onDecember 6 , 2004 at the samevenue. The first tutorial titled “FlipChip CSP Technology“ was givenby Dr. Ing. Elke Zakel from PacTechGmbH, Germany. The second tutor-ial titled “Device Reliability” wasgiven by Dr. M.K. Radhakrishnanfrom IMEC, Belgium. The third tuto-rial titled “Static Charge – ESD Con-trol System in Clean Rooms andHow to Develop an ESD ControlProgram based on ANSI/ESD Stan-dard S20.20” by Mr. Ishar Omarfrom Motorola Malaysia. About 25participants attended the tutorials.

For more information, pleasecontact Prof. Burhanuddin YeopMajlis, Institute of Microengineeringand Nanoelectronics (IMEN), Uni-versiti Kebangsaan Malaysia. Tel:603-89265861, FAX: 603-89259080,Email: [email protected].

AP/ED Bombay- by M.B. Patil

On October 20, two IEEE EDS videof i lms on MEMS rel iabi l i ty wereshown at IIT Bombay. A large num-ber of faculty members and stu-dents participated.

Prof. B.J. Cho, National Universityof Singapore (NUS), gave a talk on“Advanced gate stack technologies fornanoscale CMOS devices” on Decem-ber 14. Prof. Cho discussed high-Kgate dielectric materials for CMOStechnology and a novel material sys-tem being studied at NUS, Singapore.

- Xing Zhou, Editor

ED Kansai- by Hiroyuki Sakai

The ED Kansai Chapter held a Dis-tinguished Lecturer meeting jointlywith the CAS Kansai Chapter onNovember 19, 2004, at Osaka Uni-versity, Osaka, Japan. Dr. DaisukeUeda, Director of SemiconductorDevice Research Center, MatsushitaElectric Industrial Co. Ltd., as wellas the Chair of the ED Kansai Chap-ter at the time, was invited as a Dis-tinguished Lecturer. Dr. Ueda is oneof the leaders in the semiconductordevices field, especially well knownfor his prominent contributions tothe R&D and industrialization ofcompound semiconductor devices.The title of his talk was “LeadingEdge Technologies of Recent Semi-conductor Devices.” The maintheme of his talk was “High Fre-quency Semiconductor Devices,”but the contents of the lecture cov-ered wide f ie lds related to I I I -Vcompound semiconductor baseddevices. Starting from the basics ofthe GaAs HFETs and HBTs, hedescribed basic physics, designissues, process technologies, appli-cat ion systems and markets ofthose devices. He disclosed his veryexpertise not only in the designguidelines of GaAs based devicesbut also in the emerging field ofGaN devices. The meeting washosted by Prof. Sugino, Osaka Uni-versity and the number of partici-pants was more than 50 includingstudents and researchers f romindustries. We truly appreciate Dr.Ueda’s dedicated effort.

~Hisayo Sasaki Momose, Editor

Prof. B. J. Cho delivering a talk at IIT Bombay.

Dr. Ueda giving a Distinguished Lecture onNovember 19, 2004 at Osaka University,

Osaka, Japan

The 2004 IEEE International Conference onSemiconductor Electronics (ICSE 2004).


April 4 - 7, 2005, @ International Conference onMicroelectronic Test Structures, Location:Katholieke Universiteit Leuven, Leuven, Belgium, Con-tact: Danielle Vermetten, Katholieke Universiteit Leuven,E-Mail: [email protected], Deadline:9/14/04, www: http://www.see.ed.ac.uk/ICMTS

April 7 - 8, 2005, T IEEE Wireless andMicrowave Technology Conference,Location: Marriott Suites Clearwater Beach onSand Key, Clearwater Beach, FL, USA, Contact:Kenneth O’Connor, E-Mail: [email protected],Deadline: 12/15/04, www: http://www.wami-con.org

April 7 - 8, 2005, T Workshop on UltimateIntegration of Silicon Devices, Location: Orato-rio San Filippo, Bologna, Italy, Contact: NicolaBarin, University of Ferrara Via Saragat, E-Mail:[email protected], Deadline: 1/31/05, www:www.arces.unibo.it/ulis2005/

April 11 - 12, 2005, * IEEE/SEMI AdvancedSemiconductor Manufacturing Confer-ence and Workshop, Location: InternationalCongress Center (ICM), Munich, Germany, Con-tact: Margaret Kindling, SEMI, E-Mail: [email protected], Deadline: Not Available, www:http://www.semi.org/asmc

April 17 - 21, 2005, * IEEE International Relia-bility Physics Symposium, Location: San JoseMarriott/San Jose Convention Center, Contact: Tim-othy Rost, Texas Instruments, E-Mail: [email protected],Deadline: 10/8/04, www: http://www.irps.org

April 18 - 19, 2005, T IEEE Sarnoff Sympo-sium on Advances in Wired and WirelessCommunications, Location: Nassau Inn, Prince-ton, NJ, USA, Contact: Gerhard Franz, E-Mail:[email protected], Deadline: 10/29/04,www: http://www.sarnoffsymposium.org

April 20 - 22, 2005, @ International VacuumElectronics Conference, Location: Hotel HuisTer Duin, Noordwijk aan Zee, The Netherlands,Contact: Gonnie Elfering, E-Mail: [email protected], Deadline: Not Available,www: www.congrex.nl/05a01

April 25 - 27, 2005, T VLSI-TSA InternationalSymposium on VLSI Technology, Location:Ambassador Hotel Hsinchu, Hsinchu, Taiwan, Con-tact: Lewis Terman, IBM T.J. Watson Research Center,E-Mail: [email protected], Deadline: 10/15/04,www: http://vlsitsa.itri.org.tw/

April 27 - 29, 2005, T VLSI-TSA InternationalSymposium on VLSI Design, Automation &Test, Location: Ambassador Hotel Hsinchu, Hsinchu,Taiwan, Contact: Lewis Terman, IBM T.J. WatsonResearch Center, E-Mail: [email protected], Dead-line: 10/15/04, www: http://vlsitsa.itri.org.tw/

May 3 - 3, 2005, T Workshop on Photonics &Its Applications, Location: National Institute ofLaser Enhanced Sciences, Cairo, Egypt, Contact:Ibrahim Salem, Academy of Scientific Res & Tech, E-Mail: [email protected], Deadline: Not Available,www: Not Available

May 8 - 12, 2005, T International Conferenceon Modeling and Simulation of Microsys-tems, Location: Anaheim Marriott Convention Cen-ter, Anaheim, CA, USA, Contact: Sarah Wenning,Applied Computational Research Society, E-Mail:[email protected], Deadline: 11/19/04, www:http://www.nsti.org

May 8 - 12, 2005, T Nanotechnology Confer-ence and Trade Show, Location: Anaheim Mar-riott Convention Center, Anaheim, CA, USA, Contact:Sarah Wenning, Applied Computational ResearchSociety, E-Mail: [email protected], Deadline:11/19/04, www: http://www.nanotech2005.com

May 8 - 12, 2005, @ IEEE International Confer-ence on Indium Phosphide and RelatedMaterials, Location: Thistle Hotel, Glasgow, Scot-land, Contact: Conf Mgt Group LEOS, IEEE, E-Mail:[email protected], Deadline: 11/26/04,www: http://www.iprm05.org

May 15 - 20, 2005, T Symposium on ULSIProcess Integration, Location: Convention Centerof Quebec City, Quebec City, Canada, Contact: CorClaeys, IMEC, E-Mail: [email protected], Deadline:1/3/05, www: http://www.electrochem.org/meet-ings/future/207/meeting.htm

May 22 - 26, 2005, @ IEEE InternationalSymposium on Power SemiconductorDevices & Integrated Circuits, Location:Fess Parker’s DoubleTree Resort, Santa Bar-bara, CA, USA, Contact: Paul Chow, Rensse-lae r Po ly techn ic In s t i t u te , E -Mai l :[email protected], Deadline: 11/1/04, www:http://www.ecse.rpi.edu/conf/ISPSD2005

June 5 - 9, 2005, @ TRANSDUCERS - Inter-national Conference on Solid-State Sen-sors, Actuators and Microsystems ,Location: Convention & Exhibi t ion Center(COEX), Seoul, Korea, Contact: Hyangmi Kim, E-Mai l : in [email protected], Deadl ine:12/3/04, www: http://www.transducers05.org

June 6 - 8, 2005, * IEEE International Inter-connect Technology Conference, Location:Hyat t Regency at San Francisco Airpor t ,Burlingame, CA, USA, Contact: Wendy Walker,Widerkehr & Associates, Gaithersburg, E-Mail:[email protected], Deadline: 1/12/05,www: http://www.ieee.org/conference/iitc

June 6 - 9, 2005, T International Confer-ence on Unsolved Problems of Noise,Location: Hotel Costa Brada, Gallipoli (Lecce),Italy, Contact: Lino Reggiani, Dipartimento diIngegneria dell’ Innovazione, E-Mail: [email protected], Deadline: 12/15/04, www:http://upon4.unile.it

June 8 - 11, 2005, * IEEE Workshop onCharge-Coupled Devices & AdvancedImage Sensors, Location: Karuizawa PrinceHotel, Karuizawa-cho, Nagano, Japan, Contact:Nobukazu Teranishi, Matsushita Electric Industri-al Co., L td., E-Mail : [email protected], Deadline: Not Available,www: Not Available

June 12 - 13, 2005, @ IEEE Silicon Nanoelec-tronics Workshop, Location: Rihga Royal Hotel,Kyoto, Japan, Contact: Michiharu Tabe, ResearchInstitute of Electronics, Shizuoka University, E-Mail:[email protected], Deadline: Not Avail-able, www: http://www.vlsi.iis.u-tokyo.ac.jp/si-nano

The complete EDS Calendar can be found at our web site:http://www.ieee.org/society/eds/meetings/meetings_calendar.xml Please visit!

EDS MEETINGS CALENDAR(As of February 7, 2005)

EDS MEETINGS CALENDAR(As of February 7, 2005)


* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ’Sponsorship/Co-Sponsorship’ and ’Technical Co-Sponsorship’T = Technical Co-Sponsorship Support

June 14 - 16, 2005, @ Symposium on VLSITechnology, Location: Rihga Royal Hotel, Kyoto,Japan, Contact: Phyllis Mahoney, Widerkehr &Associates, E-Mail: [email protected],Deadline: 1/7/05, www: http://www.vlsisympo-sium.org

June 16 - 18, 2005, T Symposium on VLSI Cir-cuits, Location: Rihga Royal Hotel, Kyoto, Japan,Contact: Phyllis Mahoney, Widerkehr & Associates,E-Mail: [email protected], Deadline:1/7/05, www: http://www.vlsisymposium.org

June 20 - 22, 2005, T Device Research Con-ference, Location: University of California, San-ta Barbara, CA, USA, Contact: Alan Seabaugh,Universi ty of Notre Dame, E-Mai l :[email protected], Deadline: Not Available,www: http://www.deviceresearchconference.org

June 22 - 25, 2005, T International Con-ference on Mixed Design of IntegratedCircuits and Systems , Locat ion: HotelPegaz, Krakow, Poland, Contact: MariuszOr l ikowsk i , Un ivers i ty o f Lodz, E -Mai l :[email protected]. lodz.p l , Deadl ine:2/28/05, www: http://www.mixdes.org

June 22 - 24, 2005, T Conference on Insu-lating Films on Semiconductors, Location:Provinciehuis, Leuven, Belgium, Contact: GuidoGroeseneken, IMEC, E -Mai l : guido.groe [email protected], Deadline: 1/21/05, www:http://www.imec.be/infos

June 27 - July 1, 2005, T IEEE InternationalSymposium on the Physical and FailureAnalysis of Integrated Circuits, Location:Shangri-La’s Rasa Sentosa Resort, Singapore, Con-tact: Jasmine Leong, E-Mail: [email protected],Deadline: 2/9/05, www: www.ieee.org/ipfa

July 11 - 15, 2005, T IEEE Conference onNanotechnology, Location: Nagoya Con-gress Center, Nagoya, Japan, Contact: Fumihi-to Ara i , Nagoya Univers i ty , E -Mai l :ara [email protected] -u .ac. jp , Deadl ine:2/28/05, www: http://www.mein.nagoya-u.ac.jp/IEEE-NANO/IEEE-NANO-2005

August 8 - 12, 2005, T IEEE InternationalSymposium on Microwave, Antenna,Propagation and EMC Technologies forWireless Communications, Location: Chi-nese Institute of Electronics, Beijing, China,Contact: Mengqi Zhou, Chinese Institute ofElectronics, E-Mail: [email protected],Deadline: 3/31/05, www: http://www.cie-chi-na.org/ieee2005

August 19 - 23, 2005, T International Confer-ence on Noise in Physical Systems and 1/FFluctuations, Location: Historical Building of Sala-manca University, Salamanca, Spain, Contact: JavierMateos, Universidad de Salamanca, E-Mail:[email protected], Deadline: 12/17/04, www:http://www.usal.es/icnf

August 28 - September 2, 2005, T InternationalConference on Nitride Semiconductors, Loca-tion: Congress Center Bremen, Bremen, Germany,Contact: Carsten Kruse, E-Mail: [email protected],Deadline: 3/11/05, www: http://www.ifp.uni-bre-men.de/icns6/index.php

September 1 - 3, 2005, @ International Confer-ence on Simulation of SemiconductorProcesses and Devices, Location: Komaba Emi-nence, Tokyo, Japan, Contact: Nobuyuki Sano, E-Mail: [email protected], Deadline: 3/1/05,www: http://www.6.eie.eng.osaka-u.ac.jp/sispad

September 4 - 7, 2005, T Symposium onMicroelectronics Technology & Devices,Location: Universidade Federal de Santa Catarina-UFSC, Florianopolis, Brazil, Contact: JacobusSwart, State University of Campinas, E-Mail:[email protected], Deadline: 3/12/05,www: http://www.sbmicro.org.br/sbmicro

September 12 - 16, 2005, T International Confer-ence on Electromagnetics in Advanced Appli-cations, Location: Centro Congressi Tornio Incontra,Torino, Italy, Contact: Roberto Graglia, Politecnico doTorino, E-Mail: [email protected], Deadline: 2/25/05,www: http://www.iceaa.polito.it/

September 12 - 15, 2005, T IEEE InternationalSeminar/Workshop on Direct and InverseProblems of Electromagnetic and AcousticWave Theory, Location: Pidstryhach IAPMM,NASU, Lviv, Ukraine, Contact: Mykhalyo Andriychuk,Inst. of Applied Problems of Mech. & Math. Of NASU,E-Mail: [email protected], Deadline: 7/1/05,www: www.ewh.ieee.org/soc/cpmt/ukraine/

September 12 - 16, 2005, T European Solid-State Device Research Conference, Location:Alps Congres-Alpexpo, Grenoble, France, Contact:Iris Espejo, c/o TIMA-CMP, E-Mail: [email protected], Deadline: 4/9/05, www:www.essderc2005.com

September 18 - 21, 2005, T IEEE Custom Inte-grated Circuits Conference, Location: DoubleTreeHotel, San Jose, CA, USA, Contact: MelissaWiderkehr, Widerkehr & Associates, E-Mail: [email protected], Deadline: 4/5/05, www:http://www.ieee-cicc.org

October 3 - 6, 2005, * IEEE International SOIConference, Location: Hyatt Regency WaikikiResort & Spa, Honolulu, Hawaii, USA, Contact:Bobbi Armbruster, BACM, E-Mail:[email protected], Deadline: 5/6/05, www:www.soiconference.org

October 5 - 7, 2005, T International Confer-ence on Advanced Thermal Processing ofSemiconductors, Location: Fess Parker’s Double-Tree Resort, Santa Barbara, CA, USA, Contact: BoLojek, E-Mail: [email protected], Deadline: NotAvailable, www: www.ieee-rtp.org

October 12 - 12, 2005, T Workshop on Com-pact Modeling for RF/Microwave Applica-tions, Location: Fess Parker’s Double Tree ResortHotel, Santa Barbara, CA, USA, Contact: Slobo-dan Mijalkovic, Delft University of Technology, E-Mail: [email protected], Deadline: NotAvailable, www: http://hitec.ewi.tudelft.nl/cmrf05

October 17 - 20, 2005, * IEEE InternationalIntegrated Reliability Workshop, Location:Stanford Sierra Conference Centers, South LakeTahoe, CA, USA, Contact: Roy and Becky Walker,E-Mail: [email protected], Deadline: 7/1/05,www: www.iirw.org

October 30 - November 2, 2005, * IEEE Com-pound Semiconductor IC Symposium, Loca-tion: Hyatt Grand Champions Resort, Indian Wells,CA, Contact: Kevin Kobayashi, Sirenza Microde-vices, E-Mail: [email protected], Deadline:Not Available, www: www.csics.org

November 6 - 10, 2005, T IEEE InternationalConference on Computer Aided Design,Location: DoubleTree Hotel, San Jose, CA, USA,Contact: Kathy MacLennan, MP Associates, Inc,E-Mail: [email protected], Deadline: NotAvailable, www: http://www.iccad.com

December 13 - 15, 2005, T International Con-ference on Microelectronics, Location: SarenaHotel, Islamabad, Pakistan, Contact: Muid Mufti,Univerity of Engineering & Technology, E-Mail:[email protected], Deadline: Not Available,www: http://vlsi.uwaterloo.ca/~icm

December 13 - 17, 2005, T International HighPower Microwave Electronics: Measure-ment, Identification, Application Confer-ence, Location: Novosibirsk State Technical UnivConference Center, Novosibirsk, Russia, Contact:Alexander Gridchin, Novosibirsk State TechnicalUniversity, E-Mail: [email protected], Deadline:Not Available, www: http://ieee.sibsutis.ru

December 5 - 7, 2005, * IEEE InternationalElectron Devices Meeting, Location: HiltonWashington Towers Hotel, Washington, DC, Con-tact: Phyllis Mahoney, Widerkehr & Associates, E-Mail: [email protected], Deadline: NotAvailable, www: www.ieee.org/conferences/iedm


The 5th Workshop and IEEE EDS Mini-colloquia on Nanometer CMOS Tech-nology (WIMNACT - Hong Kong) washeld on September 18, 2004 in HongKong, being organized and sponsoredby the Hong Kong IEEE ED/SSC JointChapter and the EDS Distinguished Lec-turer Program. The one-day event washosted by the City University of HongKong, which served as the concludingforum for the Nano-technology Festivalstarted in July 2004. Before this work-shop, two other DL Talks were given byProf. Cary Yang of Santa Clara Univer-sity on “Carbon Nanotubes as On-chipInterconnects” and Prof. H.-S. PhilipWong of Stanford University on “Nano-electronics: Nanotubes, Nanowires,Molecules, and Novel Concepts” aspart of the Nano-technology Festival toarouse local interest on the current

development of nano-technology inelectronic applications.

The workshop included talks fromfour Distinguished Lecturers (DLs) fromthe United States (Dr. Wilman Tsai/Dr.Robert Chau of Intel Corporation, Prof.Jack Lee of University of Texas at Austin,and Prof. Jason Woo of University of Cal-ifornia at Los Angeles), one DL from Sin-gapore (Prof. Xing Zhou of NanyangTechnology University), one local DL(Prof. Hei Wong of City University ofHong Kong) and one Chapter committeemember (Prof. Aaron H.P. Ho of the Chi-nese University of Hong Kong). Theworkshop covered a wide range of topicsincluding “Extending Transistor Scalingand Moore’s Law with Silicon Innova-tions and Nanotechnologies”, “Hf-basedHigh-K Dielectrics”, “Interface Reliabilityand Fundamental Limitations of Hafnium

Oxide Films for Nanoscale MOS DeviceApplications”, “Analog/RF characteristicsof deeply scaled devices”, “Technology-Based Predictive Compact Model Devel-opment for Next Generation CMOS”,and “Nano-sized Gallium Oxide and Indi-um Oxide Materials Synthesized by IonImplantation”.

The event was very successful,receiving an enthusiastic response withmore than 40 attendees. The workshopwas concluded with a discussionbetween the DLs and representativesfrom local universities to promote morecollaboration between different regionsof the world.

Mansun J. ChanED/SSC Hong Kong Chapter Chair

Hong Kong University of Science & TechnologyHong Kong

EDS DISTINGUISHED LECTURERS PARTICIPATEIN THE 5TH WIMNACT - HONG KONG

Attendees of the 5th WIMNACT – Hong Kong

EDS DISTINGUISHED LECTURERS PARTICIPATEIN THE 5TH WIMNACT - HONG KONG

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