ee365 adv. digital circuit design clarkson university lecture #14 sram & dram
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EE365 Adv. Digital Circuit Design Clarkson University Lecture #14 SRAM & DRAM. Topics. SRAM DRAM. Lect #15. Rissacher EE365. Read/Write Memories. a.k.a. “RAM” (Random Access Memory) Volatility Most RAMs lose their memory when power is removed NVRAM = RAM + battery Or use EEPROM - PowerPoint PPT PresentationTRANSCRIPT
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EE365Adv. Digital Circuit Design
Clarkson University
Lecture #14
SRAM & DRAM
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Topics
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• SRAM• DRAM
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Read/Write Memories• a.k.a. “RAM” (Random Access Memory)• Volatility
– Most RAMs lose their memory when power is removed– NVRAM = RAM + battery– Or use EEPROM
• SRAM (Static RAM)– Memory behaves like latches or flip-flops
• DRAM (Dynamic Memory)– Memory lasts only for a few milliseconds– Must “refresh” locations by reading or writing
Rissacher EE365Lect #15
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SRAM
Rissacher EE365Lect #15
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SRAM operation• Individual bits are D latches, not
edge-triggered D flip-flops.– Fewer transistors per cell.
• Implications for write operations:– Address must be stable before writing cell.– Data must be stable before ending a write.
Rissacher EE365Lect #15
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SRAM array
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SRAM control lines
• Chip select• Output enable• Write enable
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SRAM read timing
• Similar to ROM read timing
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SRAM write timing
• Address must be stable before and after write-enable is asserted.
• Data is latched on trailing edge of (WE & CS).
Rissacher EE365Lect #15
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Bidirectional data in and out pins
• Use the same data pins for reads and writes– Especially common on wide devices– Makes sense when used with microprocessor
buses (also bidirectional)
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SRAM devices• Similar to ROM packages
28-pin DIPs 32-pin DIPsRissacher EE365Lect #15
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Synchronous SRAMs
• Use latch-type SRAM cells internally
• Put registers in front of address and control (and maybe data) for easier interfacing with synchronous systems at high speeds
• E.g., Pentium cache RAMs
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DRAM (Dynamic RAMs)• SRAMs typically use six transistors per
bit of storage.• DRAMs use only one
transistor per bit:• 1/0 = capacitor
charged/discharged
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DRAM read operations
– Precharge bit line to VDD/2.– Take the word line HIGH.– Detect whether current flows into or out of the cell.– Note: cell contents are destroyed by the read!– Must write the bit value back after reading.
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DRAM write operations
– Take the word line HIGH.– Set the bit line LOW or HIGH to store 0 or 1.– Take the word line LOW.
– Note: The stored charge for a 1 will eventually leak off.
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DRAM charge leakage
• Typical devices require each cell to be refreshed once every 4 to 64 mS.
• During “suspended” operation, notebook computers use power mainly for DRAM refresh.
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DRAM-chip internal organization
64K x 1DRAM
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RAS/CAS operation
• Row Address Strobe, Column Address Strobe– n address bits are provided in two steps using n/2
pins, referenced to the falling edges of RAS_L and CAS_L
– Traditional method of DRAM operation for 20 years.
– Now being supplanted by synchronous, clocked interfaces in SDRAM (synchronous DRAM).
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DRAM read timing
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DRAM refresh timing
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DRAM write timing
Rissacher EE365Lect #15
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Next time
• There is no next time
• Next Class: I’ll be here to answer any exam questions
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