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青色/緑色半導体レーザー技術の最前線
Technology Frontier of Blue and Green Semiconductor Lasers
Hiroaki OHTA and Shuji NAKAMURAMaterials department, University of California, Santa Barbara
Received September 5, 2010
Green laser diodes (LDs) have been realized using InGaN-based nitride semiconductors. Although the basic structure of green LDs is essentially same as that of violet LDs, it took around 15 years to establish the technology to grow high-quality active regions for green emission since the fi rst demonstration of nitride LDs. In this paper, we review present and future subjects of InGaN-based green LDs as well as technologies of matured red/blue LDs and topics of nonpolar/semipolar GaN materials.
Key Words: Green laser, Semiconductor laser, InGaN, Nonpolar and semipolar GaN, Display
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Fig. 1 Color range when using three 460/530/630 nm la-ser optical sources plotted on the CIE 1931 color space chromaticity diagram.
2010 10738
DVD
/ /
Fig. 1
1 nm 460 530
630 nm
2008
/ / 7.6/6.0/9.7 W
135 W
65 1
635.1 nm 7.2 W2 25 AlGaInP
300 mW
23 % 644 nm
7 W
UHP 5000
10000 3 AlInGaP
COD
GaN III
440-460 nm
405 nm
Fig. 2 (a) Maximum output power per single emitter un-der pulsed or cw operation as a function of wave-length. (b) wall-plug effi ciencies at the maximum output powers corresponding to (a). Note that var-ious active region widths are used. Diamond, tri-angle, and rectangle points correspond to InGaN LDs, SHG pumped by IR LDs, and AlGaInP LDs, respectively.
38 10 / 739
4
InGaN In
In 30 %
GaN
InGaN
GaN AlGaN 1000
In InGaN 800
c GaN
5
/6 445 nm
1.4 W 3 W
c GaN7 1 W
COD
1.2 W 24 % 1 A
1 W
30000
m 8 c
GaN
c
In
Fig. 2 c GaN
AlGaInP
αm/ αm α i η d
/
αm α i η d
9 7 W
644 nm = 1.9 eV 1.2 W
445 nm = 2.8 eV
2.35 V and 4.8 V 3,7
10 % 99 % αm = 23 cm 1 α i =
10 cm 1 η d 100 %
40-60 %
/
SHG
1060 nm
1,10 Corning
InGaAs 1060 nm
PPMgLN periodic-poled MgO-doped lithium nio-
bate 530 nm
10 Corning
15
10.8 W 304 mW
304 mW 72.9 % 10
15-20 % /
2009
GaN11 c GaN
c
LED DVD 4
400 nm
15 510 nm12 15 In
InGaN
GaN
c
5,6 In
Fig. 3 Top fi gure: Spontaneous emission and lasing spec-tra of 516 nm green LD developed by UCSB re-search group. Bottom fi gure: L-I and V-I curves of the same green LD.37
Fig. 4 The relative LED output powers for m m- and the (2021) plane according to the UCSB after Lin et al.37
2010 10740
GaN
c GaN
LED
GaN LED
510-515 nm 8 mW12
520-524 nm 50 mW 13,14
524 nm
50 mW
2.3 %
13
c
c 90
c
6
16 18 c
m GaN 19,20
m
500 nm 21 27 490-
500 nm
0.5-4 % c
24 In 520-
530-nm
28 m
UCSB
1122 29
32 30
33
2009 m 15 2021
531 nm 34,35
2.5 mW
0.22 % Fig. 3 UCSB
Al GaN
2021 516 nm36 38 Fig. 4 m 2021 LED
500 nm 202137
/ GaN
525 nm39 522 nm 30 mW
0.8 %
/ GaN
32,40
20,41 m
c40
Table 1 Summary of the typical device performance of InGaN-based green LDs. The parameters λ , Lmax, Ith, Jth, and Vth are the lasing wavelength, maximum output power, threshold current, threshold current density, and threshold voltage, re-spectively.
38 10 / 741
1122
1123 m
32 2021
101434
GaN8
GaN
2021
Fig. 2 /
LED
Table 1 2009
2010
c /
3
InGaN
3
9
gΓ αm α i
g Γ
I
s t Itr g I ≈ η i s I Itrt
Ith = { αm α i /sη iΓ}1/t Itr
η i
1 η i
η i Ith
αm α i ∝ η i αm α i = xη i
25,34
q
100 %
αm α i = xη i P ∝
xη i α i η d/η i
η d
42
η i 30 %
2009
40 %
100 % Fig. 2
LED
LED 30 %43 c LED
/
In 30 %
InGaN
Fig. 4
UCSB Al
2010 10742
37
SHG
LED 2
In
InGaN
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