先进的科学研究,尖端的测 试测量 - eeworld · 2017-09-22 · simplify complex...
TRANSCRIPT
先进的科学研究,尖端的测试测量
CN FAE
13 MARCH 2017
Advanced Measurement for
Advanced Technology
13 MARCH 2017 2
TEXT
HERE
13 MARCH 2017 3
TEXT
HERE
Signal, Data
storage/sorting
PART 4:
Power
management
PART 5:
Opto-electronics
PART 6:
New Material and
Nano-technology
PART 1:
Power
semiconductor
devices
PART 2:
MEMS and
Semiconductor
Sensors
PART 3:
Nanoscale Materials & Devices
• Nanotechnology is science and
engineering conducted at the nanoscale
level
◦ 1 to 100 nanometers
• Requires multiple disciplines:
◦ Physics, material science, chemistry and
measurement system design
• Nanoscale technologies have the
potential to improve our quality of life
◦ Medical delivery systems & detection
◦ Faster electronics
◦ Cheaper energy
◦ Bio- and chemical detection systems
13 MARCH 2017 4
Nanoscale Materials & Devices
• Graphene:
◦ 100 X stronger than the strongest
steel
◦ conducts heat and electricity efficiently
◦ nearly transparent
◦ And so on….
13 MARCH 2017 5
http://spectrum.ieee.org/nanoclast/semiconductors/materials/bilayer-graphene-could-usher-in-new-tunnel-transistor
Researchers at the Moscow
Institute of Physics and
Technology (MIPT) new tunnel
transistor based on bilayer
graphene
• reduce its power consumption
• increase in processors’ clock
speeds(two orders of
magnitude)
Wideband Gap material:GaN, SiC
6
Wide bandgap materials are often utilized in applications in which high-temperature
operation is important
From RenesasSemi. (Kr.)
Bandgap>2.3eV (or 3eV)
WBG material:GaN, SiC
• Greater emphasis on commercialization of devices made from wide
bandgap materials, especially SiC and GaN
◦ Benefits of SiC and GaN:
▪ Faster switching speed than Si smaller passive components smaller size
and lower weight higher efficiency
▫ Lower switching losses than Si (especially lower recovery losses in diodes)
▪ Lower leakage currents better switch
▪ Higher power density
▫ Pack more power into smaller areas higher efficiency
▫ Higher operating temperature (especially SiC) able to handle higher power with fewer
parametric changes and without requiring cooling systems as extensive as silicon-based
electronics smaller size and higher efficiency
SiC
GaN
What is a Source Measure Unit (SMU)?
• Simultaneously source and measure voltage and/or current
• Perform resistance measurements
True Current Source
Precision Power Supply
Source Measure Unit (SMU)
Precision DMM
Electronic Load
Keithley SMU Family - Instruments
2400 SourceMeter SMU Instruments
• Family of single-channel models with I-V capability from 1100V to 100nV and 10.5A pulse to 1pA
• Smart alternative to separate Power Supplies and Digital Multimeters (DMMs)
• Convenient DMM-like user interface
2450 & 2460 Touchscreen SourceMeter SMU Instruments
Industry-first 5” color capacitive touchscreen GUI
Test up to 200V and 1A (2450) or up to 100 V and 7A (2460)
Sub pA and sub µV resolution
2600B System SourceMeter SMU Instruments
• Family of dual- or single-channel models with I-V capability from 10A pulse to 0.1fA and 200V to 100nV
• TSP® (Test Script Processor) technology for best-in-class throughput and lowest cost of test
• Browser-based GUI enables testing on any PC from anywhere in the world
2650A Hi-Power System SourceMeter SMU Instruments
• Source and measure up to 3kV or 50A pulse, with best-in-class low current resolution
• Up to 2000W pulse or 200W DC power
• Optimized for characterizing and testing high power semiconductors, electronics, and materials
Keithley SMU Family - Systems
Parametric Curve Tracers
• Power device characterization up to 3kV and 100A including high quality instruments, cables, test fixturing, and software
• ACS Basic Edition software features real-time curve tracing and full parametric characterization modes
• Easily re-configurable to meet changing test needs
4200-SCS Semiconductor Parameter Analyzer
• An integrated analyzer for complete and precise characterization: I-V, C-V, Ultra-Fast I-V, and Pulse measurements
• Characterize devices, materials, and semiconductor processes with sub-fA resolution
• Easy-to-use Windows® GUI, modular architecture, and over 450 user-modifiable test applications simplify complex measurement
S530 Parametric Test Systems
• High-speed semiconductor parametric testing with low cost of ownership
• Designed for production and lab environments managing a broad range of devices and product wafers
• Proven SMU instrumentation technology ensures high measurement accuracy and repeatability
S500 Parametric Test Systems
• Highly configurable and scalable SMU instrument-based system
• Semiconductor device testing along with Automated Characterization Suite (ACS) at the device, wafer, or cassette level
• Ideal for SMU-per-pin Wafer Level Reliability (WLR) testing, high speed parallel test, die sort, and Process Control Monitoring (PCM)
13 MARCH 2017 11
TEXT
HERE
Signal, Data
storage/sorting
PART 4:
Power
management
PART 5:
Opto-electronics
PART 6:
New Material and
Nano-technology
PART 1:
Power
semiconductor
devices
PART 2:
MEMS and
Semiconductor
Sensors
PART 3:
Power semiconductor device:
◦ A power semiconductor device is a semiconductor device used as a switch or
rectifier in power electronics; a switch-mode power supply is an example. Such a
device is also called a power device or, when used in an integrated circuit, a
power IC.
◦ Typical device : GTO / GTR / power MOSFET / IGBT
FETs, IGBTs, Diodes, GTOs
FETs, Diodes, GTOsFETs, IGBTs, Diodes,
GTRsFETs, IGBTs, Diodes
FETs, IGBTs, Diodes, GTOs
IGBTs, Diodes IGBTs, Diodes
2A-100A 0.5A-10A 50A-200A 75A 3A-100A >150A >200A
600V-1200V 600V 650V-2000V 600V-1200V 600V-1200V690V (3kV~4kV in
future)>5kV
Characterization of power semiconductor device:
Static Characterization directly descripts DC performance and the quality of the devices, and the test is easy to perform.
Characterization Test CategoryDevices and Parameters
IGBT Power MOSFET GTR
Static ON-state VCE-ICVGE-IC
VDS-IDVTHVGS-IDRDS(on)
VCE-ICGummel plot
OFF-state ICEO
ICES
BVCES
BVCEO
BVCBS
IGSS
IDSS
BVDSS
BVDG
ICEO
ICES
BVCES
BVCEO
Dynamic Charge QG QG
NACapacitance Ciss (a.k.a. Cies)Coss(a.k.a. Coes)Crss(a.k.a. Cres)
Ciss (a.k.a. Cies)Coss(a.k.a. Coes)Crss(a.k.a. Cres)
Switching
Timing
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Ts
Tf
Keithley Power Semi Test Solutions
13 MARCH 2017 14
MEET A WIDE RANGE OF CURRENT-VOLTAGE TESTING NEEDS
Up to 100A pulse for ON-State tests
Up to 3kV for OFF-State tests
Up to 10kV for breakdown
voltage testing
Complete solution for ON-State, Off-State and
C-V tests
NEW!! Up to 7A DC, 10A pulse for
interactive ON-State testing
CONFIGURABLE SOLUTIONS COMPLETE SOLUTIONS
Keithley Power Semi Test Solutions
Single- or Dual-Channel
SMU Instruments
Options available:
• Software: ACS Basic Edition with
built-in test libraries and real-time
and parametric test modes
• Accessories: Test fixtures, protection
modules, high voltage triaxial cables
Parametric Curve Tracers
A complete bench top system that
includes a variety of SMU instruments,
cables, test fixtures, and software for
characterizing power devices
Power Semi Test Accessories
13 MARCH 2017 16
SUPPORT A VARIETY OF MEASUREMENT TYPES AND SIMPLIFY SYSTEM INTEGRATION
Model HV-CA-554
Specialized Cabling
Overvoltage
Protection Modules
High Power Test
Fixtures
High Voltage
Bias Tee kits
Power Semi Test Software
• ACS Software is the “glue” that brings all of the instruments
together to make a solution
◦ Supports Series 2400, 2600, and 4200 SMUs
• Includes hundreds of built-in device test libraries
13 MARCH 2017 17
ACS BASIC, ACS
Power Spectrum
• Power transistor forward characteristics
• Battery Load Curves
• Charger simulation
• Dynamic load simulation
• 7A DC, 10A pulsed
• 2460/2461 SMU
For designers/researchers of lighting, power management,
power conversion & control circuits and related devices
Source Measure Units Are Used in Many Places
Model 2461 SourceMeter SMU
• 10A @ 100V 1000W Pulse version of the
Model 2460
◦ 1000W Pulse Source/Sink, 100W DC
Source/Sink
◦ Pulses as fast as 150mS. Dedicated pulse
screen and commands
• Dual 18-Bit 1MS/s Digitizers for
simultaneous I&V. Store up to 5 million rdgs.
• Contact Check
• Succeeds the Model 2430, 2420-C, 2425-C,
2430-C, 2440-C SourceMeter SMUs.
Opportunity to upsell to the 2461.
13 MARCH 2017
KEITHLEY CONTINUES TO INVEST IN ITS LINE OF GRAPHICAL SOURCE MEASURE UNITS
19
IVy Android/iOS App – Visualize, Interact, Share
For Series 2600B SourceMeter SMU Instruments
•Visualize Instant Responses◦Swipe to change the source value and instantly see your device’s
response
•Interact for Better Understanding◦Pinch and zoom to gain deeper insight into your device’s performance
•Share Your Results◦Share screen shots and CSV files instantly using built-in Android tools
DUT comparison Diode Reverse Bias
LED Vf vs. Time MOSFET Family of Curves
IVy Application Examples
13 MARCH 2017 22
TEXT
HERE
Signal, Data
storage/sorting
PART 4:
Power
management
PART 5:
Opto-electronics
PART 6:
New Material and
Nano-technology
PART 1:
Power
semiconductor
devices
PART 2:
MEMS and
Semiconductor
Sensors
PART 3:
13 MARCH 2017 23
MEMS Background
• Classical application:
◦ Accelerometers, MEMS gyroscopes
(used in Wii, smart phone…)
◦ Silicon pressure sensors (car tire,
blood pressure)
◦ Bio-MEMS (biosensor, chemosensor)
◦ Optical switching (for data
communication)
◦ …
MEMS (Micro-electro-mechanical Systems )
The technology of fabricating Micro mechanical structures(devices), Usually in Silicon wafers
Sensors: turn non-electro-signal into
electrical signal
Actuator: Micro-motor moving or
controlling a mechanism or system
Structures: delicate structures for special
use (silicon pump, e.g.)
Widely Used
Pressure/Force
Light
Vibration/ acoustic wave
Fluidics
Temperature
…
R
Si
CStress
Stress induced R,
C…value change
Measurable
electrical signal
0.243 mv
13 MARCH 2017 24
Keithley Solution for MEMS device test• Customer application:
◦ Test with sensor structure for its intrinsic
characteristic without stress (pressure,
vibration etc.)
◦ To verify if fabricating process are within
control.
◦ Micro-phone:
Voice airflow Capacitance change in
MEMS sensor electrical signal ---C test
◦ Pressure sensor:
Pressure R change in MEMS sensor
electrical signal ---R test
• Test requirement: ◦ I-V:
▪ R test: Force V measure I
▪ V<10V
▪ R~KΩ
◦ C-V: ▪ Capacitance test
▪ f=100KHz DCV<30V
▪ C~10pF (0.1pF accu.)
◦ wafer level with auto-prober
MEMS (Micro-electromechanical Systems )
Micro-phone
Pressure sensor
Customer Design Product
Customer Design Product
13 MARCH 2017 25
Keithley Test Solution:
• Configuration:
◦ 4200-SCS/C x 1ea
4210-CVU*1
◦ 4200-SMU*2
◦ 4200-PA*1
S500 systemEthernet Hub
Ethernet
707B x 1ea
7174A x 1ea
4200-SCS/C- x 1ea
Include 2*4200-SMU
4210-CVU
– 707B x 1ea7174A x 1ea
Prober station
13 MARCH 2017 26
TEXT
HERE
Signal, Data
storage/sorting
PART 4:
Power
management
PART 5:
Opto-electronics
PART 6:
New Material and
Nano-technology
PART 1:
Power
semiconductor
devices
PART 2:
MEMS and
Semiconductor
Sensors
PART 3:
New Flash Memory, bigger and faster.
13 MARCH 2017 27
结构图
3D Nand Flash tech.
makes the massive data
store more easier and
faster.
From How Samsung connects to
the wordlines in the array
( courtesy Techinsights)
15.3TB SSD
from
Samsung
Non-volatile Memory Product Solutions
13 MARCH 2017 28
13 March 201728
1
2 Configuration of Solution2 for
3D Nand Flash reliability test in
one of our customer.
Example of Flash Memory Cell Test Setup
29
• SMUs are used to accurately measure Vt and ID
• PMU and RPM are used to generate program/erase segments
All connections made via the probe station
13 MARCH 2017 30
TEXT
HERE
Signal, Data
storage/sorting
PART 4:
Power
management
PART 5:
Optical energy and
device
PART 6:
New Material and
Nano-technology
PART 1:
New power
devices
PART 2:
MEMS and
Semiconductor
Sensors
PART 3:
More power and wisely use them
Increase the Capacity of battery Ultra capacitor: Need of
Public transportation Electrochemistry research
for new battery Decrease the power
consumption. More accurate Power
measurement for different mode.
“The limitation to the number of sensors and amount of generated data is the battery life of the Wearable.”
Credit Suisse
Power Management…is crucial in wearable technology because poor power management translates into battery drain…Battery life has a direct impact on a product’s real usefulness... Characterizing a usage profile is a non-trivial design activity.
Mitch Maiman, president and co-founder of Intelligent Product Solutions
Battery
capacity Power
consumption
control
Measure
ment
Using SMU for Ultra-capacitor test
• Test Instrument:
◦ Keithley 2612/36B* for C<=20F
◦ Keithley 2651A for C>=350F
• Connection:
◦ 4-wires connection (remote sense)
• Test Sample:
◦ KAMCAP 10F Urate=2.7V
◦ Maxwell 350F/3000F Urate=2.7V
2017/3/13 32
VI
SMU
Current source
Voltage Meter
Ultra capacitor
* The test instrument can be anyone of SMUs family as long as the current can fulfill the requirement.
Experiment – Result
for 10F capacitor with 2636B
• Test result:
◦ 2 cycles are tested
2017/3/13 33
Test result chart by Keithley test
software:ACS Basic
1st cycle
2nd cycle
1st cycle 2nd cycle
Cch = I2 ×(t2 –t1) / (V2 – V1)
=10.93 F
Cdch = I5 ×(t5 -t4) / (V5 – V4)
=10.88 F
Programmable, sensitive, fast, accurate TEST.
Electrochemistry Applications
Basic Lab Research
Electrode Development
ElectrolyteResearch
Organic Semi Nanomaterials
Electro-deposition
Dye-SensitizedSolar Cells
Health Care Sensors
CorrosionResistance
Batteries Fuel CellsSuper-
capacitors
Involving Research, Design, Characterization, Performance Testing
34
Electrochemistry is the cornerstone for many new products such as: batteries, glucose sensors, solar cells, coatings, medical devices etc.
Keithley’s Electrochemistry test solution
• 2450-EC: 1A, 200V, 20W
Potentiostat/Galvanostat
• 2460-EC: 7A, 100V, 100W
Potentiostat/Galvanostat
• Includes:
◦ Potentiostat (SMU)
◦ Cable for 2,3 or 4 electrodes
◦ Built-in software with test techniques
◦ Full documentation
35
Keithley SMU for Electrochemistry Applications
• Cyclic Voltammetry
• Linear Sweep Voltammetry
• Open Circuit Potential
• Potential Pulse and Square
Wave with Current Measure
• Current Pulse and Square Wave
with Voltage Measure
• Chronoamperometry
• Chronopotentiometry
GROWING LIBRARY OF TECHNIQUES
36
Distinctive differences
◦ Configure test, run experiment, generate voltammogram plot, analyze
results
SIMPLICITY
Simplify learning and test set-up
37
Solution for low power consumption measurement: DMM7510 + 2280S
Zoom In
Zoom In
Zoom In
Set Cursor
Example ApplicationMore Detailed Power Consumption Info with DMM7510
13 MARCH 2017 40
TEXT
HERE
Signal, Data
storage/sorting
PART 4:
Power
management
PART 5:
Opto-electronics
PART 6:
New Material and
Nano-technology
PART 1:
Power
semiconductor
devices
PART 2:
MEMS and
Semiconductor
Sensors
PART 3:
Optical energy: Solar cell
Force HI
Sense HI
Sense LO
Force LO
Solar Cell
Keithley provides solution from single cell
research test and mass production test.
Solar cell test solution:
• Based on SMUs’ powerful capability of
I-V characterization, solar cell test
engineers are able to test the cell or
cells more efficiently along with ACS
Basic solar cell suit.
型号 最大电流 最大电压 最高分辨率 软件
SolarCell-24
2450 ±1.05A DC ±210V 10fA/10nV
ACS Bas ic 2460 ±7A DC ±100V 10fA/10nV
SolarCell-26
2601B ±3A DC/
±10A Pulse ±40V 100fA/100nV
ACS Bas ic
2611B ±1.5A DC/
±10A Pulse ±200V 100fA/100nV
2635B ±1.5A DC/
±10A Pulse ±200V 10fA/10nV
2651A ±20A DC/
±50A Pulse ±40V 0.1fA/100nV
Max.Cur. Max.Volt. Min.Cur/Volt. Software
符号 参数名称
Isc 短路电流
Voc 开路电压
Pmax 最大功率点
Imax 最大功率点处的电流
Vmax 最大功率点处的电压
FF 填充因子
η 转换效率
Rsh 并联电阻
Rs 串联电阻
太阳能电池测试参数
Standard Solar cell characterization test can be done in ONE MINUTE!
13 MARCH 2017 43
Optical Module Components in Optical Communication
• Optical communication (a.k.a. optical
telecommunication) is communication at a
distance using light to carry information.
• Electrical signal (message) optical signal
Electrical signal (information)
• “sender” and “receiver”
• Laser diode
• Photo detector
13 MARCH 2017
44
Keithley solution for Optical Module Components test
• Final DC test, Process control DC test, Coc parallel test, FA test for TOSA/ROSA, Tuneable, Coherent etc., telecom, Datacom products
2602/2612/2636Dual-C SMUs
2510
TEC
2602/2612/2636
Dual-C SMUs
2602/2612/2636
Dual-C SMUsFixture
DUT
Optical Spectrum analyzer
Optical power meter
PC (GPIB/LAN)
… GPIB/LAN cable
Source
Fiber
26** SMU:– 4-quadrant voltage/current
source and measure instruments
– 10A pulse to 0.1fA and 200V to 100nV
– TSP (Test Script Processing) technology
etc.
•10fA (10x10-15A) sensitivity•<200µV voltage burden•Bipolar 500V floating source•Displays resistance
6485/6487 Picoammeter/Source
Display: wearable, touchable, Display
LCD
a-Si
LTPS
IGZO
CGS
OLED
AMOLED
PMOLED
ITO LCD: Liquid crystal display
– TFT: Thing film Transistor
– liquid crystal molecular
– Backlight (light source)
OLED: Organic Light Emitting Diode
– “Sandwich”structure: organic semiconductor between two electrodes
– Each pixel is LED/LEDs
13 MARCH 2017 46
Keithley solution for Display
IV test
CV/IV test
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
U #
Switch Matrix
S500/S530:
S500/S530 system for TEG test in Display manufacture
13 MARCH 2017 47
TEXT
HERE
Signal, Data
storage/sorting
PART 4:
Power
management
PART 5:
Opto-electronics
PART 6:
New Material and
Nano-technology
PART 1:
Power
semiconductor
devices
PART 2:
MEMS and
Semiconductor
Sensors
PART 3:
Researchers use Our Sensitive Instruments
to Make Great Scientific Discoveries
Dr. Konstantin Novoselov
2010 Nobel Prize in Physics
Graphene (two dimensional
material)
Dr. Klaus von Klitzing
1985 Nobel Prize in Physics
Quantized Hall effect
Dr. K. Alexander Muller and
Dr. J. Georg Bednorz
1987 Nobel Prize in Physics
Superconductivity in ceramic
materials
And They Need All Our of Equipment
Shuji Nakamura and his research group at UCSB.
Credit: UC Santa Barbara
Typical University/ Research Lab
– SourceMeters
– Scopes
– Power Supplies
– DMMs
– Other Equipment
2014 Physics Nobel
Laureate for the
development of the
Blue LED Team that invented Violet Nonpolar
Vertical-Cavity Laser Technology
Need More Sensitivity: The Most World’s Most
Sensitive Meter
Note: Q of 1e- = 1.6X10-19 C
1A = 6.2 x 1018 electron/second
Our Key Advantage:The world’s most sensitive current measurement instrument