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MP S 8 0 5 0

N Discre te POWER & Signa l Technologies

MPS8050

NPN General Purpose AmplifierThis device is designed for general purpose audio amplifier applicationsat collector currents to 500 mA. Sourced from Process 30.

Absolute Maximum Ratings* TA = 25C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES :1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25C unless otherwise noted

Symbol Characteristic Max UnitsMPS8050

PD Total Device DissipationDerate above 25 C

6255.0

mWmW/ C

RJC Thermal Resistance, Junction to Case 83.3 C/W

RJA Thermal Resistance, Junction to Ambient 200 C/W

Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 V

VCBO Collector-Base Voltage 40 V

VEBO Emitter-Base Voltage 6.0 V

IC Collector Current - Continuous 1.0 A

TJ , T stg Operating and Storage Junction Temperature Range -55 to +150 C

CB E

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Electrical Characteristics TA = 25C unless otherwise noted

OFF CHARACTERISTICS

Symbol Parameter Test Conditions Min Max Units

ON CHARACTERISTICS

V(BR)CEO Collector-Emitter Sustaining Voltage* I C = 30 mA, I B = 0 25 V

V(BR)CBO Collector-Base Breakdown Voltage I C = 100 A, IE = 0 40 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 A, IC = 0 6.0 V

ICBO Collector-Cutoff Current V CB = 35 V, I E = 0 0.1 A

ICES Collector-Cutoff Current V CE = 20 V, I E = 0 75 nA

hFE DC Current Gain I C = 5.0 mA, V CE = 1.0IC = 100 mA, V CE = 1.0IC = 800 mA, V CE = 1.0

458040

300

VCE( sat ) Collector-Emitter Saturation Voltage I C = 800 mA, I B = 80 mA 0.5 V

VBE( sat ) Base-Emit ter Saturation Vol tage I C = 800 mA, I B = 80 mA 1.2 V

*Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%

Typical Characteristics

Base-Emitter SaturationVoltage vs Collector Current

10 100 10000.4

0.6

0.8

1

1.2

I - COLLECTOR CURRENT (mA) V

- B A S E E M I T T E R V O L T A G E ( V )

C

B E S A T

= 10

- 40 C

25 C

125 C

NPN General Purpose Amplifier(continued)

Typical Pulsed Current Gainvs Collector Current

1 10 100 1000

50

100

150

200

250

300

I - COLLECTOR CURRENT (A) h

- T Y P I C A L P U L S E D C U R R E N T G A I N

F E

- 40 C

25 C

C

V = 1VCE125 C

Collector-Emitter SaturationVoltage vs Collector Current

10 100 10000

0.1

0.2

0.3

0.4


- C O L L E C T O R E M I T T E R V O L T A G E ( V )

C C E S A T

= 10

- 40 C

25 C

125 C

Base Emitter ON Voltage vsCollector Current

1 10 100 10000

0.2

0.4

0.6

0.8

1


- B A S E E M I T T E R O N V O L T A G E ( V )

C

B E O N

V = 1VCE

- 40 C

25 C

125 C

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MP S 8 0 5 0 Typical Characteristics (continued)

NPN General Purpose Amplifier(continued)

Collector-Cutoff Currentvs. Ambient Temperature

25 50 75 100 1250.001

0.01

0.1

1

10

T - AMBIENT TEMPERATURE ( C)

I

- C O L L E C T O R C U R R E N T ( n A )

A

C B O

V = 40VCB

Collector Saturation Region

20004000

60008000

2000040000

0

0.5

1

1.5

2

I - BASE CURRENT (uA) V

- C O L L E C T O R - E

M I T T E R V O L T A G E ( V )

C E

B

100mA 800mA5 mA

Ta = 25 C

Ic =

Input and Output Capacitancevs Reverse Voltage

0.1 1 10 1000.1

1

10

100

V - COLLECTOR VOLTAGE(V)

C A P A C I T A N C E ( p F )

Cib

Cob

f = 1.0 MHz

ce

Gain Bandwidth Productvs Collector Current

1 10 20 50 1000

200

400

600

800

1000

I - COLLECTOR CURRENT (mA) f -

G A I N B A N D W I D T H P R O D U C T ( M H z )

C

T

V = 10Vce

Collector-Emitter BreakdownVoltage with ResistanceBetween Emitter-Base

0.1 1 10 100 100032

33

34

35

36

37

38

RESISTANCE (k ) B V

- B R E A K D O W N V O L T A G E ( V )

C E R

Power Dissipation vsAmbient Temperature

0 25 50 75 100 125 1500

100

200

300

400

500

600

700

TEMPERATURE ( C)

P -

P O W E R D I S S I P A T I O N ( m W )

D

o

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