Daniel LincotInstitut Photovoltaïque Ile de France (IPVF)
Institut de Recherche et Développement sur l’Energie Photovoltaïque IRDEP CNRS‐EDF‐CHIMIE PARISTECH, Chatou
Daniel‐[email protected]
Innovative approaches for CIGS Solar Cells
Institut Phovoltaïque Ile de FranceInstitute for the Energy Transition
Both academic and industrial partners : CNRS, Ecole Polytechnique, EDF, TOTAL, Air Liquide, Horiba Jobin Yvon, Riber
Web site :www.ipvf.fr
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Associated laboratories
Research programs :Silicon, thin films, New Concepts, characterization and theory, economic and social aspects
« 30/30/30 for modules »
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
New building in construction (mid 2017 ‐ 8000 m2)
D Lincot IW‐CIGSTech 7 23‐06‐2016 EUPVSEC
CIGS 22.6 %
Looking to the past for the future : An evolutionaryapproach- CIGS a case exemple !
potassium
gradientsCBD CdSSodiumtemperaturegallium
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Verre
Mo (0,5 m)
P CuInSe2 (2 m)
N+ CdS:In/Ga (1‐2 m)
Not to scale
N type layerEvaporation
P type layerEvaporation
Contacts
Back contact
Substrate
<1980
8%
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Verre
Mo (0,5 m)
P Cu(In,Ga)Se2 (2 m)
N+
(Cd,Zn)S:In/Ga (1‐2 m)
6
Not to scale
N type layerEvaporation
P type layerEvaporation
Contacts
Back contact
Substrate
1985
12%
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Verre
Mo (0,5 m)
P Cu(In,Ga)Se2
ZnO(Al)
6
Not to scale
ZnO(Al)By Sputtering
P type layerBy coEvaporation3 stage process
Contacts
Back contact
Substrate
1994
Ga Rich
In rich
Ga rich
CdS by Solution (CBD)
15%
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Glass or metal/plastic foil
Mo (0,5 m)
P CuIn0.7 Ga0.3 Se2 (2 m)
N‐ CdS 10‐ 50nm
N++ ZnO : Al (1 m)
Not to scale
Window Layer
Buffer layer
Absorber layer
Contacts
Back contact
Substrate
N‐ ZnO (100 nm)
P+ Mo(S,Se)2 (10‐100 nm)
2010‐2015
N Cu(In,Ga)3Se5 (?)
Na+
Ga
Ga
In
20%
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Verre/polymère/métal
Mo (0,5 m)
P CuIn0.7 Ga0.3 Se2 (2 m)
N‐ CdS ou Zn(O,S) 10‐ 50nm
N++ ZnO : Al (1 m) Couche fenêtreconductrice
Couche tampon
Couche absorbante
Contacts
Contact arrière
Substrat
N‐ ZnO (100 nm)
P+ Mo(S,Se)2 (10‐100 nm)
2016
N GIGS + K
Na+
Ga
Ga
In
K+
22%
11
Selected innovative approaches
‐ Low indium consumption with high efficiencies‐ Microcell concept‐ Ultrathin CIGS
‐ New deposition methods‐ Electrodeposition
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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New Concept : CIGS microcells under concentrationIntroduced by IRDEP in 2010
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
21,3 %
2013
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016,EUPVSEC
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Addressing the concept of separated microcells
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Good edge passivation
Edge recombination < 1.3 104 cm/s
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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S. Jutteau et al. (2015)
Design of the optical component
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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S. Jutteau et al. (2015)
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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‐ Last results presented at IEEE (2016) and EMRS, to be published)‐ studies of electrodeposited microcells(bottom up)
‐ HZB : Spatially controlled microcells by coevaporation (APL 2016)‐ ZSW : 23% from top down CIGS (poster this conference)
On going :
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Ultrathin Cu(In,Ga)Se2 based solar cells
N. Naghavi1,4, F. Mollica2,4, J. Gofard3,4, J. Possada1,4, A. Duchatelet2,4, M. Jubault2,4, F. Donsanti2,4, A. Cattoni3,4, S. Collin3,4, P.P. Grand2,4, J. J. Greffet5, D. Lincot1,4
1 CNRS, IRDEP – UMR 7174, 6 quai Watier, 78400 Chatou, France2 EDF R&D, IRDEP, 6 quai Watier, 78400 Chatou, France3 Laboratoire de Photonique et de Nanostructures (LPN,CNRS), Marcoussis, France4 IPVF, Institute Photovoltaïque d’Ile de France, 8 rue de la Renaissance, 92160 Antony, France5Institut d’Optique CNRS, Campus Polytechnique, RD 128, 91127 Palaiseau cedex, France
E‐MRS spring meeting 2016
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Influence of back contact on 0.1 micron thick cells
Conditions Voc Jsc FF Efficiency
W/O mirror 0.44 15.2 73.9 4.97
W mirror 0.45 21.6 74.2 7.24
W mirror + BSF 0.66 21.6 77.6 11.1
W mirror+ BSF + p++
0.77 20.8 77.3 11.9
With ligthtrapping*(Ref 2 micron)
0.77(0.6)
30(32.5)
77(79.6)
17(15.7)
* Estimated values
From: D. Lincot, 7th International Symposium on Innovative Solar CellsJanuary 19‐20, 2015
Tokyo, Japan
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
What is our goal ?
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To explore the possibility of reducing the thickness CIGS layer down to 0.2µm while maintaining a high efficiency level of solar cells.
Reducing the thickness by 10: Release of In shortage issues & faster Industrial processes
But : fundamental scientific challenges
To maintain high efficiencies : Deposition of hight quality ultrathin CIGS Absorption of light: optical management
Extraction of the charge carriers : electrical management
N. Naghavi ‐ EMRS – 08/05/2016
2‐2,5 µm0,1‐0,2 µm
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
0.4‐0.5 µm
0.3 µm
0.2 µm
2‐2.5 µm
What has been done ?
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Can we really reach similarefficiencies with a thin CIGS absober<300 nm compared
to a thick one ?
N. Naghavi ‐ EMRS – 08/05/2016
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
0.4‐0.5 µm
0.3 µm
0.2 µm
2‐2.5 µm
What has been done ?
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N. Naghavi ‐ EMRS – 08/05/2016
*Vermang & al; Prog. Photovolt: Res. Appl. (2014)DOI: 10.1002/pip.2527*Vermang & al; IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 4, NO. 6, NOVEMBER 2014
Introduction of Al2O3 rear surface passivation layer with nanosizedlocal point contacts to reduce recombination at the standardMo/CIGS rear interface
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Calculated Jsc as function of dCIGS for different BC
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Mo
Mo
CIGS
CdSi‐ZnO
ZnO:Al
50 nm70 nm
400 nm
Mo BC : Jsc with thickness
N. Naghavi ‐ EMRS – 08/05/2016N. Dahan & al., Optic express, OPTICS EXPRESS,21/3, 2563‐2580 (2013)
Use of the radiative transfer equation (RTE).
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Deposition process
High efficiencyLow cost
Co‐evaporation2 step process
Electrodeposition+ heat treatement
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Reactive sputtering1 step process:
Providing uniform coatings over large areas.
Comparaison of two CIGS thicknesses : 500 & 300 nm
N. Naghavi ‐ EMRS – 08/05/2016
P4.31.Posada & al. May 5, 2016, 16h
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Solar cell characterizations
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300 nm
370 nm
650 nm
280 nm
550 nm
470 nm
N. Naghavi ‐ EMRS – 08/05/2016
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Comparaison with the litterature
J. Peterson et al., IEEE J. Photovolt., Vol. 3, no. 4, 2013B. Vermang et al., Prog. Photovolt: Res. Appl. 2014K. Kim et al., IEEE J. Photovolt., vol. PP, no. 99, pp. 1 –5, 2012
N. Naghavi ‐ EMRS – 08/05/2016
Sample Process CGI/GGI Thickness(nm)
Efficiency(%)
Jsc(mA.cm‐2)
Voc(mV)
FF (%)
This studyED
+ Se annealing0.94/0.6 370 8.7 19 685 66.8
Petterson, 2013
Coevaporation 0.87/0.46 300 8.3 16.7 672 74.6
Vermang,2014
Coevaporation 0.85‐90 /0.3 400 9.1 23.2 576 67.7
Kim, 2013PVD
+H2Se/H2S annealing
0.87/0.22 250 9.1 21 612 71.1
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Proof of concept of nanostructured mirrors
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1 µm1 µm
500 nm
Nanoimprint lithography Residual layer removing Au deposition
1 µm 1 µm
N. Naghavi ‐ EMRS – 08/05/2016
GlassGlue
ZnO:Al/iZnO/CdS300 nm CIGS
Spin coatedTiO2Au
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Flat versus nanostructured mirrors
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N. Naghavi ‐ EMRS – 08/05/2016
Jsc 2.3 mA/cm² (from 13.7 to 16 mA/cm²)
Efficiency 30% (from 5 to 6.5%)
dCIGS=300 nm
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Light management in ultra-thin CIGS solar cellsby substituting the back contact
with a TCO-based reflector
Fabien MOLLICA1,4, Marie JUBAULT1,4, Frederique DONSANTI1,4, Anaïs LOUBAS3,4, Muriel BOUTTEMY3,4, Arnaud ETCHEBERRY3,4, Negar NAGHAVI2,4
E‐MRS spring meeting 2016
1 EDF R&D, IRDEP, 6 quai Watier, 78400 Chatou, France2 IRDEP ‐ CNRS – UMR 7174, 6 quai Watier, 78400 Chatou, France3 Lavoisier Institute of Versailles (ILV) – UMR 8180 CNRS – UVSQ, 45 avenue des Etat‐Unis, 78035 Versailles, France4 IPVF, Institute Photovoltaïque d’Ile de France, 8 rue de la Renaissance, 92160 Antony, France
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
• CIGS/SnO2:F with CuMirror
300 nm thick CIGS
Fabien Mollica et al.32
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
What about unconventional deposition methods ?
• Historical view : Chemical bath deposition now a standard ALCVD becoming a standard?
• What about Printing, ElectrodepositionPrinting of CIGS : New results solar frontier (this conference 18.7%)Electrodeposition of CIGS : Nexcis (2015) 17.3 % cell and 14% modules
Emerging fields :
Electrodeposition of buffer and TCO (IRDEP)Electrodeposition of metallic grids (IRDEP)
33D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Zn2+ + ½ O2
ZnO
I
E
II IIII
The photoelectrochemical deposition approach of ZnO
Zone I : kinetic controlZone II: photocurrent generation control-CB injectZone III: Photocurrent + dark current control (defeDecomposition of CIGS)
distance
pote
ntia
l
ZnO
CIGS
I-E cuve
electrolyte
Darklight
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
2015
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
Starting industrial Transfert(2015)
D. Lincot,IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Process
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Conclusions
Besides efficiency perpectivesthe CIGS technology offers wide range of innovative avenues
Two examples presented here :
‐ Low dimensionality solar cells , new paradigm‐ much less indium at higher efficiencies !
‐ Alternative deposition methods : electrodeposition
ThanksADEME, ANR, EU projectsZSW, EMPAIRDEP and IPVF teams
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC