CustomModules
IGBTAssemblies Assemblies
Fast RecoveryDiode Modules
Thyristor &Diode
Modules
DiscreteRectifiers
DiscreteThyristors IGBTs
SiCModules
VOLTAGE: 30V TO 15,000V CURRENT: 50A TO 1600A
TABLE OF CONTENTS
Numbering System ..................................................................................L-2Product Overview .....................................................................................L-2
Custom IGBT Modules ............................................................................L-4Custom MOSFET Modules .....................................................................L-5Custom Fast Diode Modules .................................................................L-5Outline Drawings ......................................................................................L-6
Capabilities:Customers looking for application specific custom power modules benefit from Powerex’s years of experience in chip manufacturing and design / engineering. Powerex custom power modules employ performance proven features. Soldered-down and wire bonding fabrication and compression bonded encapsulation (CBE) of SCR / Diode elements offer increased switching speeds, lower losses, more efficient cooling and higher power handling capabilities.
Reliability / Qualification Testing:Reliability and qualification testing can be performed in accordance to military specifications, including Group A, B and C and specific customer requirements.
CUSTOM MODULES (Commercial / Moisture Resistant / Hermetic)
Features:
• Different Circuit Configurations (i.e. Common Emitter, Chopper)• Different Termination Styles (i.e. Thicker Bus Bars, D-sub Connectors, Press On Pins, etc.)• Extended Temperature Range, -55°C to 200°C• Hermetic Modules• High Voltage Isolation• Integrated Heatsinks – Both Air and Liquid Cooled by Eliminating the Baseplate• Larger Free-wheel Diodes• Low Module Weight• Moisture Resistance• Over-current Shutdown• Package Height, Width and Length• Temperature and Current Sense
Substrates:• Alumina • Aluminum Nitride • BeO • IMS Die Technology: • Diode • MOSFET • FR Diode • SCR • GTO • SiC Diode • HVIGBT • SiC MOSFET • IGBTPackages: • Custom Development for Both Plastic and Hermetic Packages • Picture Frame • Standard IGBT Cases
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L-2
Q(1)
R(2)
S(3)
45(4)
06(5)
0(6)
02(7)
QRS4506002 is a 4500V, 60ACustom Single Fast Diode Module
Q(1)
I(2)
D(3)
12(4)
30(5)
0(8)
1(9)
5(10)
QID1230015 is a 1200V, 300A Custom IGBT Dual Module
(1) Product Line: Q = Custom Module
(2) Device: G = GTO I = IGBT J = MOSFET K = Transistor R = Rectier T = Thyristor U = Gate Driver
Serial Designation(STANDARD)
Serial Designation(SPECIAL)
Numbering SystemProduct Overview
AMPERES
600V
4500V
2500V
600V
250V
DU
AL
/ S
TAN
DA
RD
CO
NF
IGU
RA
TIO
ND
UA
L /
CO
MM
ON
E
MIT
TE
RS
LOW
SID
EC
HO
PP
ER
SS
ING
LE
S
CU
STO
M IG
BT
MO
DU
LE
S
600V
1200V
60045030020012060 1000
600450
400
40030020012060 1000
AMPERES
250V
6-PA
CT
HR
EE
-PH
AS
E
BR
IDG
E
QIS4506001
QIQ0645001
QIQ0645003QIQ0630003
QIC0212003
QID1230015
QID0640020
•QIS4506002
QIE0220002
QIS2510001
QID0660023
QIS0660004
(Continued on page L-3)
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L-3
CustomModules
IGBTAssemblies Assemblies
Fast RecoveryDiode Modules
Thyristor &Diode
Modules
DiscreteRectifiers
DiscreteThyristors IGBTs
SiCModules
(4) Voltage: A1 = 10 A2 = 20 A3 = 30 A4 = 40 A5 = 50 A6 = 60 A7 = 70 A8 = 80 A9 = 90
01 to 99 X 100
(5) Current: 1K = 1000 1D = 1200 1E = 1500 1M = 1600 1S = 1800 2K = 2000 2D = 2200 2E = 2500 2M = 2600 2S = 2800 3K = 3000 3D = 3200 3E = 3500 3M = 3600 3S = 3800
01 to 99 X 10
Serial Designation
STANDARD: (6) T = Terminal Height (7) 0 – 99 Terminal Height (mm)
SPECIAL: (8) 0 – 9 (Numbered from 001 – 999 for (9) 0 – 9 each individual combination of (10) 0 – 9 7 previous digits.)
(3) Conguration: B = H-Bridge (Single-phase Bridge) C = Common Emitter (Cathode) D = Double / Dual E = Three-phase Full Wave F = Common Anode G = Converter Inverter H = Three-Phase Half-wave P = Asymmetrical Half-bridge Q = Low Side Chopper R = High Side Chopper S = Single T = Two Individual
Numbering System
Product Overview
AMPERES
CU
STO
M F
AS
T D
IOD
E M
OD
UL
ES
SIN
GL
E F
AS
TD
IOD
ES
4500V
1700V
1400V
700 /80
250 /90
12060 /100
0
700 /80
250 /90120
60 /100
0 AMPERES
500V
SIN
GL
E
MO
DU
LE
CU
STO
M M
OS
FE
T
QRS1450001
QRS171D001
QRS4506001
QJS0512001
•QRS4506002
(Continued from page L-2)
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L-4
C1
E1
G1
C1
E2
18V
18VE2
G2
1
52
6
4
3
7
E1C2
E2
C1
NC
NC
SE2
G2
C2E1
SE1
G1
Dual / Standard Conguration Custom IGBT Modules Dual / Common Emitter Custom IGBT Modules
QID0660023 QID0640020, QID1230015QIS0660004
Low Side Chopper Custom IGBT ModulesQIQ0630003, QIQ0645001, QIQ0645003
QIC0212003C
E1
E3
G2
Single Custom IGBT Modules
QIS2510001, QIS4506001,
QIS4506002
Th
TH1(1)
TH2(2)
G1(15)
E1(16)
C(22)
E(23)E(24)
C(48)C(47)
NTC
G2(38)
E1C2(24) E1C2(23)
Tr2Di2 Di1
Tr1
E2(39)
E2(47)
C1(48)
Th
TH1(1)
TH2(2)
G1(15)
C1(22)
E1(16)
NTC
P
UP-9
UP-10
CN-5
CN-6
U
VP-11
VP-12
CN-3
CN-4
V
WP-13
WP-14
CN-1
CN-2
W
N
6-Pac Three-Phase Bridge
QIE0220002
Custom IGBT Modules, (Refer to device datasheets at www.pwrx.com for test conditions.)
VCESVoltsType
ICAmperes
ICMAmperes
Tj(MAX)°C
MAXIMUM RATINGS
Typ.VCES (SAT)
Volts
ELECTRICAL CHARACTERISTICS
Static
ICAmperes
Typ.VGE
VoltsCiesnF
Resistive Load Switching Times
td(on)ns
trns
td(off)ns
trns
FREE-WHEEL DIODE THERMAL CHARACTERISTICS
IFMAmperes
VFMVolts
trrns
Diode(Max.)Rth(j-c)°C/W
WeightGrams Number
OutlineDrawings
Page
IGBT(Max.)Rth(j-c)°C/W
VRMSIsolation
Volts
Test Conditions Max.
VCES (SAT)Volts
Dynamic
CoesnF
CresnF
VGE = 0V, f = 1KHz
Dual / Common Emitter Custom IGBT Modules250QIC0212003 120 120 4.0 TBD TBD 0.24 TBD 1100150 2500 1.7 TBD TBD TBD1.2
600
600
1200
QID0640020
QID0660023
QID1230015
400
600
300
400
600
300
6.0
6.0
7.0
50
90
47
VCE(SAT)Test Cond.
TBD
10
10
10
5.3
11.0
4.0
0.112
0.075
0.079
0.192
0.120
0.144
220
270
220
150
150
150
2500
2500
2500
2.1
2.2
2.6
1.6
3.6
0.9
—
—
—
—
—
—
1.7
1.7
2.0
800
1200
600
240
200
500
550
200
300
180
400
750
600
600
300
600
200
—
250
TBD TBD TBD TBD TBD
Tj = 25°C
Low Side Chopper Custom IGBT Modules600
600
600
QIQ0630003
QIQ0645001
QIQ0645003
2
10
1
10
4
5
5
L-6
L-9
L-6
L-9
L-7
L-7
L-7
300
450
450
300
450
450
6.0
6.0
6.0
30
45
45
10.5
15.9
15.9
0.11
0.075
0.045
0.11
0.075
0.045
270
400
400
125
125
125
2000
2000
2000
2.8
2.8
2.8
6
9
9
300
450
450
2.2
2.2
2.2
2.1
2.1
2.1
10
10
10
600
900
900
350
350
350
600
600
600
350
350
350
300
300
300
110
110
110
Dual / Standard Conguration Custom IGBT Modules
Single Custom IGBT Modules600
2500
4500
4500
QIS0660004
QIS2510001
QIS4506001
QIS4506002
600
100
60
60
600
100
60
60
6.0
6.0
6.0
6.0
69
10
10
10
8.0
1.1
0.7
0.7
0.079
0.10 Typ.
0.05 Typ.
0.05 Typ.
0.132
—
—
—
220
21
21
21
150
150
150
150
TBD
TBD
TBD
TBD
2.1
4.2
3.9
3.9
2.4
0.33
0.2
0.2
—
—
—
—
—
—
—
—
1.7
3.2
3.0
3.0
10
10
10
10
1200
200
120
120
700
TBD
2400
2400
250
TBD
2400
2400
700
TBD
6000
6000
600
TBD
1200
1200
300
—
—
—
10
6
6
8
L-9
L-7
L-7
L-8
6-Pac Three-Phase Bridge250QIE0220002 9 L-8200 200 — 6610 3.0 0.21 0.47 680150 2500 1.7 2.3 — —1.2400 700 1800 700 500 300
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L-5
CustomModules
IGBTAssemblies Assemblies
Fast RecoveryDiode Modules
Thyristor &Diode
Modules
DiscreteRectifiers
DiscreteThyristors IGBTs
SiCModules
Single Fast Diode Modules
QRS1450001,QRS171D001,QRS4506001,QRS4506002
Custom Fast Diode Modules, (Refer to device datasheets at www.pwrx.com for test conditions.)
Type
VRRMVolts
(VRSM = VRRM + 100V)
IF(av)/TCAmperes/°C
(180° sin)
VFM/IFMVolts/Amperes
(Tj = 25°C)
trrns
Rth(j-c)°C/W
Rth(c-s)°C/W
Tj(max)°C
IFSMAmperes
(8.3ms, Tj(max),100% VRRM Reapplied)
i2tA2 sec
(8.3ms, Tj(max),100% VRRM Reapplied)
at IfAmperes
di/dtAmperes/µs Weight Number
OutlineDrawings
Page
NORTH AMERICAN trr
QRS1450001
QRS171D001
QRS4506001
QRS4506002
7
7
6
8
L-8
L-8
L-7
L-8
1400
1700
4500
4500
250 / 90
700 / 80
60 / 100
60 / 100
3330
2400
120
120
46,200
24,000
1900
1900
3.2 / 250
2.5 / 700
150
6.2 / 60
150
150
150
150
300
2000
230
230
500
1200
67
67
-1000
-2400
-800
-800
0.075
0.04
0.12
0.12
0.04
0.04
TBD
TBD
400
400
21
21
Single Fast Diode Modules
5
4
1
3
2
QJS0512001
Single Custom MOSFET Module
Custom MOSFET Module, (Refer to device datasheets at www.pwrx.com for test conditions.)
VDSVoltsType
IDAmperesTj = 25°C
(Typ.)VRMSVolts
Tj(MAX)°C
MAXIMUM RATINGS
IDSS(µA)
(Max.)
ELECTRICAL CHARACTERISTICS
Static
RDS(on)(mΩ)(Typ.)
VDSSVolts
(Min.)
THERMAL CHARACTERISTICS
Module(Max.)Rth(c-f)°C/W
WeightGrams Number
OutlineDrawings
Page
MOSFET(Typ.)Rth(j-c)°C/W
VRMSIsolation
Volts
VSDVolts
(Max.)
Qg(nC)
(Typ.)
Single Custom MOSFET Module500QJS0512001 120 22 500 0.1 0.075 500150 2500 1.520 3802500 3 L-6
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L-6
QID06600231
Dim. Inches Millimeters
A 3.721 94.51 B 3.155 80.14 C 1.349 34.26 E 1.201 30.51 F 0.95 24.13 G 0.911 23.14 K 0.65 16.51
Dim. Inches Millimeters
A 3.15 80.0 B 0.83 21.0 C 2.69 68.2 D 3.62 92.0 E 1.378 35.0 F 1.772 45.0 G 1.402 35.6 H 0.787 20.0 J 0.47 11.8 K 0.395 10.0 L M5 Metric M5 M 0.11 2.8 N 7.256 76.5
Dim. Inches Millimeters
A 4.00 101.6 B 2.50 63.5 C 1.00±0.015 25.4±0.4 D 3.39 86.1 E 1.89 48.0 F 0.435 11.0 G 0.165 4.2 H #10-32 X 0.31 Min.
2 3
Dim. Inches Millimeters
J 0.87 22.1 K 0.98 24.9 L 0.22 Dia. 5.6 Dia. M 0.53 13.5 N 0.09 Min. 2.3 Min. P 0.27 6.9 Q #2-56 X 0.17 Min.
Dim. Inches Millimeters
P 0.114 2.9 Q 0.228 5.8 R 0.157 4.0 S 0.032 0.8 T 0.66 46.8 U 1.18 30.0 V 1.09 27.7 W 0.93 23.7 X 0.66 16.6 Y 0.24 6.2 Z 0.09 2.2 AA 0.05 Dia. 1.3 Dia.
Dim. Inches Millimeters
L 0.522 13.26 M 0.48 12.19 N 0.423 10.74 P 0.325 8.26 Q 0.261 6.63 S M6 Metric M6
QIC0212003 QJS0512001
A
C
U
D
VW
X
E
J
FG
HH
T BR
Q
SR
P
K M
Y
Z
N(2 PLACES)
AA
L(3 PLACES)
B
GG F
M
C
A
EG
K
P
N
L
N
32
1
Q(2 PLACES)
S(3 PLACES)
C2E1 E2
E2
G2
E1
G1
C1
C1
A
F
G
G
N
P
D
EB
K K
J
M M
LABEL
M
C
L - (4 PLACES)
Q - (5 PLACES)
C1
C1E2C2E1G1
E1
18V
18V
E2
G2
H - (3 PLACES)
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L-7
CustomModules
IGBTAssemblies Assemblies
Fast RecoveryDiode Modules
Thyristor &Diode
Modules
DiscreteRectifiers
DiscreteThyristors IGBTs
SiCModules
4 5 6
Dim. Inches Millimeters
A 2.31 53.6 B 0.98 25.0 C 2.01 51.0 D 0.2 5.0 E 0.1 2.5 F 0.27 6.9 G 0.49 12.5 H 0.46 Max. 11.8 Max.
Dim. Inches Millimeters
A 4.25 108.0 B 2.44 62.0 C 1.14+0.04/-0.02 29.0+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 1.88±0.01 48.0±0.25 F 0.67 17.0 G 0.16 4.0 H 0.24 6.0 J 0.59 15.0
Dim. Inches Millimeters
A 3.70 94.0 B 3.150±0.01 80.0±0.25 C 1.89 48.0 D 1.18 Max. 30.0 Max. E 0.90 23.0 F 0.83 21.2 G 0.71 18.0 H 0.67 17.0 J 0.63 16.0
Dim. Inches Millimeters
K 0.51 13.0 L 0.47 12.0 M 0.30 7.5 N 0.28 7.0 P 0.256 Dia. 6.5 Dia. Q 0.26 6.5 R M5 Metric M5 S 0.16 4.0
Dim. Inches Millimeters
K 0.55 14.0 L 0.87 22.0 M 0.33 8.5 N 0.10 2.5 P 0.85 21.5 Q 0.98 25.0 R 0.11 2.8 S M6 Metric M6 T 0.25 Dia. 6.5 Dia.
Dim. Inches Millimeters
J 0.14 3.6 K 0.22 5.7 L 0.43 10.8 M 0.04 1.0 N 0.43 10.9 P 0.02 0.5 Q 0.21 Dia. 5.3 Dia.
QIQ0630003 QIQ0645001, QIQ0645003 QIS2510001, QIS4506001, QRS4506001
P (2 TYP.)R (3 TYP.)
B
C
A
S
S
GK
L
EE HH
FD
Q
M
NJ
NJ J #110 TAB
C2E1 C1E2
G1
E1
E2
G2
CM
T (4 TYP.)
C2E1 E2
CL
C1
G1
E1
E2
G2
K
D
C
A
EB
KK
L
R
M
J
PQS (3 TYP.)
TC MEASURED POINT
Q
U
N
F
H
G
H
B
G
CA
P
NL
M
F
K
E (3)
G (2)
E (1)
C (BASE)
H
A (3)
NC (2)
A (1)
C (BASE)
H
QIS4506001QIS2510001
QRS4506001J
D E
Q
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L-8
7
Dim. Inches Millimeters
A 4.72 120.0 B 2.17 55.0 C 1.39 35.0 D 4.17±0.02 106.0±0.5 E 0.43 11.0 F 0.28 7.0 G 0.54 13.62 H 1.61 40.78 J 0.67 17.0 K 0.47 12.0 L M5 M5 M 0.27 Dia. 5.5 Dia.Housing Types (J.S.T. Mfg. Co. Ltd.) AA – B8P-VH-FB-B AB – B2P-VH-FB-B
Dim. Inches Millimeters
A 2.35 59.7 B 0.98 25.0 C 1.98 50.3 D 0.197 5.0 E 0.22 5.5 F 0.22 5.6 G 0.465 11.8 H 0.27 6.9
Dim. Inches Millimeters
A 4.21 107.0 B 3.661±0.01 93.0±0.25 C 2.44 62.0 D 1.89±0.01 48.0±0.25 E 1.42 Max. 36.0 Max. G 1.18 30.0 H 1.14 29.0 K 0.94 24.0
8 9
Dim. Inches Millimeters
L 0.93 23.5 N 0.69 17.5 P 0.63 16.0 R 0.43 11.0 U 0.12 3.0 V 0.26 Dia. 6.6 Dia. W M6 Metric M6
Dim. Inches Millimeters
J 0.93 23.6 K 0.14 3.6 L 0.20 5.2 M 0.40 1.0 N 0.43 11.0 P 0.20 0.5 Q 0.12 3.0 R 0.208 5.3
Dim. Inches Millimeters
N 1.23 32.0 P 0.47 11.75 Q 0.53 13.5 R 0.91 23.0 S 0.87 22.0 T 0.76 19.75 U 0.42 10.75 V 0.87+0.04/-0.02 22.0+1.0/-0.5 W 0.91 23.2 X 0.63 16.0 Y 0.12 3.0
QRS1450001, QRS171D001 QIS4506002, QRS4506002 QIE0220002
U
R
K
EL
K
B
G
NH
D
CE
G
E
A
P
C
W (2 TYP.)
V (4 TYP.)
V WXK
Y
AE
D
H JG J
F
C
L
AA
M
N
B
K
K
Q P
K
K
K
K
S R
T
U
R R
8
CN UP VP WP
1
N
P
B
1 1 1
AB
U V W
A
F
H
K
Q PE
L
JB
G
M
R
C
E (3)
G (2)
E (1)
C (BASE)
C (BASE)
QIS4506002
QRS4506002
A (3)
NC (2)
A (1)
ND
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L-9
CustomModules
IGBTAssemblies Assemblies
Fast RecoveryDiode Modules
Thyristor &Diode
Modules
DiscreteRectifiers
DiscreteThyristors IGBTs
SiCModules
DETAIL "B"
A
D
E
FJ J
AR
Z
AA
AB
B
AHAJ
AX
AW
AL
AMAK
AEAD
AS
ANAQ
AF
AG
ATAU
AV
AP
G
H
P
C
X
T
TS
S
Q
R
Q
NV
U
U
WAC (4 PLACES)
M
K K
K
LL
Y(4 PLACES) DETAIL "A"
DETAIL "B"
DETAIL "A"
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Tolerance Otherwise Specified (mm)
The tolerance of size between terminals is assumed to ±0.4
Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2
DETAIL "B"
A
D
E
FJ J
AR
Z
AA
AB
B
AHAJ
AX
AW
AD
AS
G
H
P
C
X
T
TS
S
Q
R
Q K
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
QID0640020, QID1230015, QIS066000410
Dim. Inches Millimeters
A 5.98 152.0 B 2.44 62.0 C 0.67+0.04/-0.02 17.0+1.0/-0.5 D 5.39 137.0 E 4.79 121.7 F 4.33±0.02 110.0±0.5 G 3.89 99.0 H 3.72 94.5 J 0.53 13.5 K 0.15 3.81 L 0.28 7.25 M 0.30 7.75 N 1.95 49.53 P 0.9 22.86 Q 0.55 14.0 R 0.87 22.0
Dim. Inches Millimeters
S 0.67 17.0 T 0.48 12.0 U 0.24 6.0 V 0.16 4.2 W 0.37 6.5 X 0.83 21.14 Y M6 M6 Z 1.53 39.0 AA 1.97±0.02 50.0±0.5 AB 2.26 57.5 AC 0.22 Dia. 5.5 Dia. AD 0.67+0.04/-0.02 17.0+1.0/-0.5 AE 0.51 13.0 AF 0.27 7.0 AG 0.03 0.8
Dim. Inches Millimeters
AH 0.81 20.5 AJ 0.12 3.0 AK 0.14 3.5 AL 0.26 6.5 AM 0.53 13.5 AN 0.15 3.81 AP 0.05 1.15 AQ 0.025 0.65 AR 0.29 7.4 AS 0.05 1.2 AT 0.17 Dia. 4.3 Dia. AU 0.102 Dia. 2.6 Dia. AV 0.088 Dia. 2.25 Dia. AW 0.12 3.0 AX 0.49 12.5
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