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Semiconductor Components Industries, LLC, 2013
December, 2013 Rev. 15
1 Publication Order Number:
2N5194/D
2N5194G, 2N5195G
Silicon PNP PowerTransistors
These devices are designed for use in power amplifier and switching
circuits; excellent safe area limits.
Features
Complement to NPN 2N5191, 2N5192
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS(Note 1)
Rating Symbol Value Unit
CollectorEmitter Voltage2N5194G2N5195G
VCEO6080
Vdc
CollectorBase Voltage
2N5194G2N5195G
VCB6080
Vdc
EmitterBase Voltage VEB 5.0 Vdc
Collector Current IC 4.0 Adc
Base Current IB 1.0 Adc
Total Device Dissipation@ TC= 25CDerate above 25C
PD40
320W
W/C
Operating and Storage JunctionTemperature Range
TJ, Tstg 65 to +150 C/W
Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
1. Indicates JEDEC registered data.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase RJC 3.12 C/W
*For additional information on our PbFree strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
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4 AMPERE
POWER TRANSISTORS
PNP SILICON
60 80 VOLTS
MARKING DIAGRAM
Y = Year
WW = Work Week
2N519x = Device Code
x = 4 or 5G = PbFree Package
2N5195G TO225
(PbFree)
500 Units / Bulk
Device Package Shipping
2N5194G TO225
(PbFree)
500 Units / Bulk
ORDERING INFORMATION
3
BASE
1
EMITTER
COLLECTOR
2, 4
TO225
CASE 7709
STYLE 1
1 2 3
YWW
2
N519xG
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ELECTRICAL CHARACTERISTICS (TC= 25C unless otherwise noted) (Note 2)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 3)(IC= 0.1 Adc, IB= 0)
2N5194G2N5195G
VCEO(sus)
6080
Vdc
Collector Cutoff Current(VCE= 60 Vdc, IB= 0)
2N5194G(VCE= 80 Vdc, IB= 0)
2N5195G
ICEO
1.0
1.0
mAdc
Collector Cutoff Current(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)
2N5194G(VCE= 80 Vdc, VBE(off)= 1.5 Vdc)
2N5195G(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 125C)
2N5194G(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 125C)
2N5195G
ICEX
0.1
0.1
2.0
2.0
mAdc
Collector Cutoff Current(VCB= 60 Vdc, IE= 0)
2N5194G(VCB= 80 Vdc, IE= 0)
2N5195G
ICBO
0.1
0.1
mAdc
Emitter Cutoff Current(VBE= 5.0 Vdc, IC= 0)
IEBO 1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)(IC= 1.5 Adc, VCE= 2.0 Vdc)
2N5194G2N5195G
(IC= 4.0 Adc, VCE= 2.0 Vdc)2N5194G2N5195G
hFE
2520
107.0
10080
CollectorEmitter Saturation Voltage (Note 3)
(IC= 1.5 Adc, IB= 0.15 Adc)(IC= 4.0 Adc, IB= 1.0 Adc)
VCE(sat)
0.61.4
Vdc
BaseEmitter On Voltage (Note 3)(IC= 1.5 Adc, VCE= 2.0 Vdc)
VBE(on) 1.2
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product(IC= 1.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)
fT2.0
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.2. Indicates JEDEC registered data.3. Pulse Test: Pulse Width 300s, Duty Cycle 2.0%.
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Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
10
0.10.004
7.0
5.0
1.0
0.7
0.50.3
0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0
VCE= 2.0 V
VCE= 10 V
2.0 3.0
TJ= 150C
- 55C25C
3.0
2.0
0.2hFE
,DC
CUR
RENTGAIN
(NORMALIZED)
VCE
,COLLECTOR
-EMITTER
VOLTA
GE(VOLTS)
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
00.05
1.6
1.2
0.8
0.4
0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500
IC= 10 mA
5.0 7.0 20 30 50 70 100 200 300
100 mA 1.0 A 3.0 A
TJ= 25C
2.0
0.005
IC, COLLECTOR CURRENT (AMP)
0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0
1.6
1.2
0.8
0.4
0
TJ= 25C
VBE(sat)@ IC/IB= 10
VCE(sat)@ IC/IB= 10
VOLTAGE(VOLTS)
Figure 3. On Voltage
0.1 0.5 3.0
VBE@ VCE= 2.0 V
+ 2.5
Figure 4. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
*APPLIES FOR IC/IBhFE@ VCETJ= - 65C to +150C
V,
TEMP
ERATURECOEFFICIENTS(mV/C)
+ 2.0
+ 1.5
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
VBfor V BE
*VCfor V CE(sat)
+ 1.0
0.005 0.01 0.020.03 0.05 0.2 0.3 1.0 2.0 4.00.1 0.5 3.0
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RBE
,EXTERNALBASE
-EMITTER
RESISTANCE(OHMS)
103
+ 0.4
Figure 5. Collector CutOff Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
10-1
,COLLE
CTOR
CURRENT(A)
IC10- 2
10- 3
+ 0.3 + 0.2 + 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 0.6
VCE= 30 Vdc
TJ= 150C
100C
25C
REVERSE FORWARD
ICES
107
20
Figure 6. Effects of BaseEmitter Resistance
TJ, JUNCTION TEMPERATURE (C)
40 60 80 100 120 140 160
106
105
104
103
102
VCE= 30 V
IC= 10 x I CES
IC= 2 x I CESIC ICES
(TYPICAL ICESVALUES
OBTAINED FROM FIGURE 5)
Figure 7. Switching Time Equivalent Test Circuit
APPROX
-11 V
TURN-ON PULSE
Vin
t1
VBE(off)
TURN-OFF PULSE
Vin
t3
t2
APPROX
-11 V
VCC
SCOPERB
Cjd
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10
1.0
Figure 11. Rating and Thermal Data
ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.12.0 5.0 10 20 50 100
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC= 25CBONDING WIRE LIMIT
0.2IC,
COLLEC
TOR
CURRENT(AMP)
CURVES APPLY BELOW RATED VCEO
TJ= 150C
2N5194
dc
5.0 ms1.0 ms
100 s
2N5195
Note 1:
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11is based on TJ(pk)= 150C. TCis
variable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided T J(pk)150C. At highcase temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 12. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.010.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t)
,EFFECTIVETRANSIENT
THERMALRESISTANCE(NORMALIZ
ED)
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
JC(max)= 3.12C/WD = 0.5
0.2
0.05
0.02
0.01SINGLE PULSE
0.1
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
tP
PP PP
t1
1/f
DUTY CYCLE, D = t1f =t1tP
PEAK PULSE POWER = PP
Figure 13.
A train of periodical power pulses can be represented by
the model shown in Figure 13. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12was calculated for various
duty cycles.
To find JC(t), multiply the value obtained from Figure 12
by the steady state value JC.
Example:The 2N5193 is dissipating 50 watts under the following
conditions: t1= 0.1 ms, tp= 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
The peak rise in junction temperature is therefore:
T = r(t) x PPx JC= 0.27 x 50 x 3.12 = 42.2C
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PACKAGE DIMENSIONS
TO225CASE 7709
ISSUE AC
DIM MIN MAX
MILLIMETERS
D 10.60 11.10E 7.40 7.80
A 2.40 3.00
b 0.60 0.90
P 2.90 3.30L1 1.27 2.54
c 0.39 0.63
L 14.50 16.63
b2 0.51 0.88
Q 3.80 4.20
A1 1.00 1.50
e 2.04 2.54
E
1 2 3
NOTES:1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.2. CONTROLLING DIMENSION: MILLIMETERS.3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
be
c
L
A1
A
FRONT VIEW BACK VIEW
FRONT VIEW SIDE VIEW
12 3
3 2 1
4
PIN 4
BACKSIDE TAB
STYLE 1:PIN 1. EMITTER2., 4. COLLECTOR
3. BASE
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2N5194/D
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